GB1414481A - Methods of producing phosphosilicate glass patterns - Google Patents

Methods of producing phosphosilicate glass patterns

Info

Publication number
GB1414481A
GB1414481A GB235072A GB235072A GB1414481A GB 1414481 A GB1414481 A GB 1414481A GB 235072 A GB235072 A GB 235072A GB 235072 A GB235072 A GB 235072A GB 1414481 A GB1414481 A GB 1414481A
Authority
GB
United Kingdom
Prior art keywords
coating
layer
mixture
phosphosilicate glass
silica layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB235072A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Components Ltd
Original Assignee
Mullard Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mullard Ltd filed Critical Mullard Ltd
Priority to GB235072A priority Critical patent/GB1414481A/en
Priority to DE2302148A priority patent/DE2302148C2/en
Priority to IT67071/73A priority patent/IT977622B/en
Priority to US324394A priority patent/US3877980A/en
Priority to JP826173A priority patent/JPS5718340B2/ja
Priority to FR7301693A priority patent/FR2173949B1/fr
Publication of GB1414481A publication Critical patent/GB1414481A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
    • H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Surface Treatment Of Glass (AREA)

Abstract

1414481 Phosphosilicate glass coatings MULLARD Ltd 18 Jan 1973 [18 Jan 1972] 2350/72 Heading C1M An apertured phosphosilicate glass layer (7) having a desired pattern, and superimposed on an apertured silica layer (5a) having the same pattern on a substrate, is prepared by (a) preparing an apertured silica layer 5a on substrate 1 (e.g. a silicon slice); (b) depositing a coating 6 of a mixture of a polysiloxane mixture (defined below) and a tris-(diorganosilylene) diphosphate (wherein Q 1 and Q 2 each represent a methyl, ethyl or vinyl group) over the substrate and silica layer; (c) irradiating the coating in the desired pattern with an electron beam (e.g. by using a mask 3); (d) washing the coating with a solvent to remove the unirradiated coating material so as to leave a residual coating layer 7 coincident with layer 5a; and (e) heating the residual coating to form a layer of phosphosilicate glass; the atomic ratio Si to P in the deposited coating 6 being 3-49 : 1. The polyiloxane mixture is a mixture of the polymers some of the units of the latter polymer being replaced by units of the form (where n is 1 to 6 and each R is methyl, ethyl or vinyl). The silica layer may be prepared by irradiation and subsequent heating of the polysiloxane mixture alone (as described in Specification 1,316,711). The heating of both layers preferably is at 650-800‹ C. in oxygen saturated with water at not more than 95‹ C., and then in dry nitrogen at 950-1100‹ C. An intermediate heating at 700-900‹ C. in dry nitrogen may be included. The silica layer may be 500Š thick. Unirradiated coating is removed by dissolving with solvent (e.g. acetone or methylated spirit). The silicone slice may be initially cleaned by oxidizing, then immersing in hydrofluoric acid and then in solutions comprising concentrated sulphuric acid and hydrogen peroxide. The electron beam may be of power 9 kev, and the total exposure 250 ÁC/cm.<SP>2</SP>.
GB235072A 1972-01-18 1972-01-18 Methods of producing phosphosilicate glass patterns Expired GB1414481A (en)

Priority Applications (6)

Application Number Priority Date Filing Date Title
GB235072A GB1414481A (en) 1972-01-18 1972-01-18 Methods of producing phosphosilicate glass patterns
DE2302148A DE2302148C2 (en) 1972-01-18 1973-01-17 Method of making a phosphosilicate glass sheet pattern
IT67071/73A IT977622B (en) 1972-01-18 1973-01-17 PROCEDURE FOR PRODUCING A PHOSPHOLIC GLASS DESIGN LAYER ON A SUBSTRATE, PARTICULARLY IN APPLICATION TO SEMI-CONDUCTIVE DEVICES
US324394A US3877980A (en) 1972-01-18 1973-01-17 Methods of producing phosphosilicate glass patterns
JP826173A JPS5718340B2 (en) 1972-01-18 1973-01-18
FR7301693A FR2173949B1 (en) 1972-01-18 1973-01-18

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB235072A GB1414481A (en) 1972-01-18 1972-01-18 Methods of producing phosphosilicate glass patterns

Publications (1)

Publication Number Publication Date
GB1414481A true GB1414481A (en) 1975-11-19

Family

ID=9738016

Family Applications (1)

Application Number Title Priority Date Filing Date
GB235072A Expired GB1414481A (en) 1972-01-18 1972-01-18 Methods of producing phosphosilicate glass patterns

Country Status (1)

Country Link
GB (1) GB1414481A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113736142A (en) * 2021-09-01 2021-12-03 浙江三时纪新材科技有限公司 Preparation method of semiconductor packaging material or substrate material, semiconductor packaging material or substrate material obtained by preparation method and application of semiconductor packaging material or substrate material

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113736142A (en) * 2021-09-01 2021-12-03 浙江三时纪新材科技有限公司 Preparation method of semiconductor packaging material or substrate material, semiconductor packaging material or substrate material obtained by preparation method and application of semiconductor packaging material or substrate material

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Legal Events

Date Code Title Description
PS Patent sealed
PCNP Patent ceased through non-payment of renewal fee