JPS4826437A - - Google Patents

Info

Publication number
JPS4826437A
JPS4826437A JP47070086A JP7008672A JPS4826437A JP S4826437 A JPS4826437 A JP S4826437A JP 47070086 A JP47070086 A JP 47070086A JP 7008672 A JP7008672 A JP 7008672A JP S4826437 A JPS4826437 A JP S4826437A
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP47070086A
Other languages
Japanese (ja)
Other versions
JPS5314351B2 (cg-RX-API-DMAC7.html
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPS4826437A publication Critical patent/JPS4826437A/ja
Publication of JPS5314351B2 publication Critical patent/JPS5314351B2/ja
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/665—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes the conductor comprising a layer of elemental metal contacting the insulator, e.g. tungsten or molybdenum

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Solid State Image Pick-Up Elements (AREA)
  • Non-Volatile Memory (AREA)
JP7008672A 1971-08-09 1972-07-14 Expired JPS5314351B2 (cg-RX-API-DMAC7.html)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US16996171A 1971-08-09 1971-08-09

Publications (2)

Publication Number Publication Date
JPS4826437A true JPS4826437A (cg-RX-API-DMAC7.html) 1973-04-07
JPS5314351B2 JPS5314351B2 (cg-RX-API-DMAC7.html) 1978-05-17

Family

ID=22617925

Family Applications (1)

Application Number Title Priority Date Filing Date
JP7008672A Expired JPS5314351B2 (cg-RX-API-DMAC7.html) 1971-08-09 1972-07-14

Country Status (10)

Country Link
JP (1) JPS5314351B2 (cg-RX-API-DMAC7.html)
AR (1) AR200242A1 (cg-RX-API-DMAC7.html)
BR (2) BR7205394D0 (cg-RX-API-DMAC7.html)
CH (1) CH534939A (cg-RX-API-DMAC7.html)
DE (1) DE2236510C3 (cg-RX-API-DMAC7.html)
FR (1) FR2148581B1 (cg-RX-API-DMAC7.html)
GB (1) GB1374009A (cg-RX-API-DMAC7.html)
IT (1) IT963412B (cg-RX-API-DMAC7.html)
NL (1) NL7209890A (cg-RX-API-DMAC7.html)
SE (1) SE384756B (cg-RX-API-DMAC7.html)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147226A (en) * 1975-06-13 1976-12-17 Nec Corp Semiconductor memory device
JPS5257741A (en) * 1975-11-07 1977-05-12 Hitachi Ltd Semiconductor memory
JPS6161293A (ja) * 1984-08-31 1986-03-29 Mitsubishi Electric Corp ダイナミツクメモリ装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
ES404184A1 (es) * 1971-07-06 1975-06-01 Ibm Una disposicion de celula de memoria de acceso casual para calculadoras digitales.
DE2441385C3 (de) * 1974-08-29 1981-05-07 Siemens AG, 1000 Berlin und 8000 München Verfahren zum Vergrößern des Lesesignals bei einem Ein- Transistor-Speicherelement
JPS5853512B2 (ja) * 1976-02-13 1983-11-29 株式会社東芝 半導体記憶装置の製造方法
GB1562650A (en) * 1976-11-18 1980-03-12 Fairchild Camera Instr Co Memory cell for storing charge
IT1110947B (it) * 1978-01-19 1986-01-13 Sperry Rand Corp Elemento di memoria ad accesso comandato
US4230954A (en) 1978-12-29 1980-10-28 International Business Machines Corporation Permanent or semipermanent charge transfer storage systems
DE2912858A1 (de) * 1979-03-30 1980-10-09 Siemens Ag Niederohmige leitung

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS51147226A (en) * 1975-06-13 1976-12-17 Nec Corp Semiconductor memory device
JPS5257741A (en) * 1975-11-07 1977-05-12 Hitachi Ltd Semiconductor memory
JPS6161293A (ja) * 1984-08-31 1986-03-29 Mitsubishi Electric Corp ダイナミツクメモリ装置

Also Published As

Publication number Publication date
DE2236510C3 (de) 1975-01-23
AR200242A1 (es) 1974-10-31
DE2236510B2 (de) 1974-05-22
IT963412B (it) 1974-01-10
SE384756B (sv) 1976-05-17
CH534939A (de) 1973-03-15
BR7205403D0 (pt) 1973-06-07
DE2236510A1 (de) 1973-03-08
FR2148581B1 (cg-RX-API-DMAC7.html) 1980-03-21
JPS5314351B2 (cg-RX-API-DMAC7.html) 1978-05-17
FR2148581A1 (cg-RX-API-DMAC7.html) 1973-03-23
NL7209890A (cg-RX-API-DMAC7.html) 1973-02-13
GB1374009A (en) 1974-11-13
BR7205394D0 (pt) 1973-06-07

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