JPH1197391A - 半導体ウエハー配線電解メッキ方法 - Google Patents

半導体ウエハー配線電解メッキ方法

Info

Publication number
JPH1197391A
JPH1197391A JP26933797A JP26933797A JPH1197391A JP H1197391 A JPH1197391 A JP H1197391A JP 26933797 A JP26933797 A JP 26933797A JP 26933797 A JP26933797 A JP 26933797A JP H1197391 A JPH1197391 A JP H1197391A
Authority
JP
Japan
Prior art keywords
semiconductor wafer
wiring
electrolytic plating
plating
electroplating
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP26933797A
Other languages
English (en)
Japanese (ja)
Other versions
JPH1197391A5 (OSRAM
Inventor
Naoaki Kogure
直明 小榑
Hiroaki Inoue
裕章 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ebara Corp
Original Assignee
Ebara Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ebara Corp filed Critical Ebara Corp
Priority to JP26933797A priority Critical patent/JPH1197391A/ja
Publication of JPH1197391A publication Critical patent/JPH1197391A/ja
Publication of JPH1197391A5 publication Critical patent/JPH1197391A5/ja
Pending legal-status Critical Current

Links

Landscapes

  • Electroplating And Plating Baths Therefor (AREA)
  • Electroplating Methods And Accessories (AREA)
  • Electrodes Of Semiconductors (AREA)
JP26933797A 1997-09-16 1997-09-16 半導体ウエハー配線電解メッキ方法 Pending JPH1197391A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP26933797A JPH1197391A (ja) 1997-09-16 1997-09-16 半導体ウエハー配線電解メッキ方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP26933797A JPH1197391A (ja) 1997-09-16 1997-09-16 半導体ウエハー配線電解メッキ方法

Publications (2)

Publication Number Publication Date
JPH1197391A true JPH1197391A (ja) 1999-04-09
JPH1197391A5 JPH1197391A5 (OSRAM) 2004-09-30

Family

ID=17470971

Family Applications (1)

Application Number Title Priority Date Filing Date
JP26933797A Pending JPH1197391A (ja) 1997-09-16 1997-09-16 半導体ウエハー配線電解メッキ方法

Country Status (1)

Country Link
JP (1) JPH1197391A (OSRAM)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11238704A (ja) * 1998-02-23 1999-08-31 Ideya:Kk 半導体基板の配線溝メッキ方法およびメッキ装置
JP2000174025A (ja) * 1998-12-02 2000-06-23 Internatl Business Mach Corp <Ibm> エレクトロマイグレ―ション抵抗力を有する微細構造及びその製造方法
JP2000353675A (ja) * 1999-05-03 2000-12-19 Motorola Inc 半導体ウェハ上に銅層を形成する方法
WO2001007687A1 (fr) * 1999-07-26 2001-02-01 Tokyo Electron Limited Dispositif, procede et systeme de plaquage
JP2001152387A (ja) * 1999-09-16 2001-06-05 Ishihara Chem Co Ltd ボイドフリー銅メッキ方法
KR20030095005A (ko) * 2002-06-11 2003-12-18 김재정 반도체 배선용 금속막 형성 방법
US7229916B2 (en) 2003-07-18 2007-06-12 Nec Electronics Corporation Method of manufacturing a semiconductor device
WO2009055989A1 (en) * 2007-10-30 2009-05-07 Acm Research (Shanghai) Inc. Method and apparatus to prewet wafer surface for metallization from electrolyte solution
JP2012132058A (ja) * 2010-12-21 2012-07-12 Ebara Corp 電気めっき方法
JP2013033893A (ja) * 2011-06-28 2013-02-14 Sharp Corp 光半導体素子および光半導体素子の製造方法
US9295167B2 (en) 2007-10-30 2016-03-22 Acm Research (Shanghai) Inc. Method to prewet wafer surface
JP2018093034A (ja) * 2016-12-01 2018-06-14 株式会社カネカ 太陽電池の製造方法、および電極形成用めっき装置
US10329683B2 (en) 2016-11-03 2019-06-25 Lam Research Corporation Process for optimizing cobalt electrofill using sacrificial oxidants
JPWO2019130859A1 (ja) * 2017-12-27 2020-12-17 株式会社カネカ 光電変換素子の製造方法及びめっき用治具、めっき装置

Cited By (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11238704A (ja) * 1998-02-23 1999-08-31 Ideya:Kk 半導体基板の配線溝メッキ方法およびメッキ装置
JP2000174025A (ja) * 1998-12-02 2000-06-23 Internatl Business Mach Corp <Ibm> エレクトロマイグレ―ション抵抗力を有する微細構造及びその製造方法
JP2000353675A (ja) * 1999-05-03 2000-12-19 Motorola Inc 半導体ウェハ上に銅層を形成する方法
WO2001007687A1 (fr) * 1999-07-26 2001-02-01 Tokyo Electron Limited Dispositif, procede et systeme de plaquage
US6607650B1 (en) 1999-07-26 2003-08-19 Tokyo Electron Ltd. Method of forming a plated layer to a predetermined thickness
JP2001152387A (ja) * 1999-09-16 2001-06-05 Ishihara Chem Co Ltd ボイドフリー銅メッキ方法
KR20030095005A (ko) * 2002-06-11 2003-12-18 김재정 반도체 배선용 금속막 형성 방법
US7229916B2 (en) 2003-07-18 2007-06-12 Nec Electronics Corporation Method of manufacturing a semiconductor device
WO2009055989A1 (en) * 2007-10-30 2009-05-07 Acm Research (Shanghai) Inc. Method and apparatus to prewet wafer surface for metallization from electrolyte solution
KR101487708B1 (ko) * 2007-10-30 2015-01-29 에이씨엠 리서치 (상하이) 인코포레이티드 전해질 용액으로부터 금속배선 형성을 위해 웨이퍼 표면을 프리웨팅하는 방법 및 장치
US9295167B2 (en) 2007-10-30 2016-03-22 Acm Research (Shanghai) Inc. Method to prewet wafer surface
JP2012132058A (ja) * 2010-12-21 2012-07-12 Ebara Corp 電気めっき方法
US9376758B2 (en) 2010-12-21 2016-06-28 Ebara Corporation Electroplating method
JP2013033893A (ja) * 2011-06-28 2013-02-14 Sharp Corp 光半導体素子および光半導体素子の製造方法
US10329683B2 (en) 2016-11-03 2019-06-25 Lam Research Corporation Process for optimizing cobalt electrofill using sacrificial oxidants
US11078591B2 (en) 2016-11-03 2021-08-03 Lam Research Corporation Process for optimizing cobalt electrofill using sacrificial oxidants
JP2018093034A (ja) * 2016-12-01 2018-06-14 株式会社カネカ 太陽電池の製造方法、および電極形成用めっき装置
JPWO2019130859A1 (ja) * 2017-12-27 2020-12-17 株式会社カネカ 光電変換素子の製造方法及びめっき用治具、めっき装置

Similar Documents

Publication Publication Date Title
AU765242B2 (en) Electrodeposition of metals in small recesses using modulated electric fields
US6203684B1 (en) Pulse reverse electrodeposition for metallization and planarization of a semiconductor substrates
US6750144B2 (en) Method for electrochemical metallization and planarization of semiconductor substrates having features of different sizes
US6524461B2 (en) Electrodeposition of metals in small recesses using modulated electric fields
CN1246504C (zh) 在工件上电镀金属的装置和方法
US6319384B1 (en) Pulse reverse electrodeposition for metallization and planarization of semiconductor substrates
US6881318B2 (en) Dynamic pulse plating for high aspect ratio features
JPH1197391A (ja) 半導体ウエハー配線電解メッキ方法
CN1137511C (zh) 生产集成电路时由高纯铜电镀形成导体结构的方法
CN102939408B (zh) 铜电镀组合物和使用该组合物填充半导体衬底中的空腔的方法
JPH1197391A5 (OSRAM)
TW487968B (en) Electrochemical deposition for high aspect ratio structures using electrical plus modulation
CN1259460C (zh) 一种避免电镀沉积铜装置沉积的薄膜生成空穴的方法
US20080083624A1 (en) Electrolysis Plating System
EP3768880A1 (en) Process for electrodeposition of cobalt
KR102562157B1 (ko) 코발트 전착 공정
JP2004197228A (ja) 微細孔および/または微細溝を有する基材の孔埋めめっき方法
CN1534112A (zh) 一种避免电镀沉积铜薄膜生成空穴的装置及其使用方法
JP2009132982A (ja) 銅配線の製造方法
TW520407B (en) Plating method and apparatus that creates a differential between additive disposed on a top surface and a cavity surface of a workpiece using an external influence
US11322400B2 (en) Roughening of a metallization layer on a semiconductor wafer
Lee et al. Pulsed Electrodeposition of Copper from Alkaline and Acid Baths for Metallization in Integrated Circuits
JP2006265735A (ja) 微細Viaホールを有する基板への電解めっき方法
Sun et al. APPLICATION OF AN ELECTROCHEMICAL COPPER METALLIZATION-PLANARIZATION PROCESS TO SUB-0.25 µ FEATURES
JP2001230252A (ja) Cu系埋込配線を有する半導体装置及びCu系埋込配線のパルスメッキ方法

Legal Events

Date Code Title Description
A977 Report on retrieval

Effective date: 20050420

Free format text: JAPANESE INTERMEDIATE CODE: A971007

A131 Notification of reasons for refusal

Effective date: 20070508

Free format text: JAPANESE INTERMEDIATE CODE: A131

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20071113