JPH1197391A5 - - Google Patents
Info
- Publication number
- JPH1197391A5 JPH1197391A5 JP1997269337A JP26933797A JPH1197391A5 JP H1197391 A5 JPH1197391 A5 JP H1197391A5 JP 1997269337 A JP1997269337 A JP 1997269337A JP 26933797 A JP26933797 A JP 26933797A JP H1197391 A5 JPH1197391 A5 JP H1197391A5
- Authority
- JP
- Japan
- Prior art keywords
- wiring
- plating
- semiconductor wafer
- electroplating
- pulse
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26933797A JPH1197391A (ja) | 1997-09-16 | 1997-09-16 | 半導体ウエハー配線電解メッキ方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP26933797A JPH1197391A (ja) | 1997-09-16 | 1997-09-16 | 半導体ウエハー配線電解メッキ方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1197391A JPH1197391A (ja) | 1999-04-09 |
| JPH1197391A5 true JPH1197391A5 (OSRAM) | 2004-09-30 |
Family
ID=17470971
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP26933797A Pending JPH1197391A (ja) | 1997-09-16 | 1997-09-16 | 半導体ウエハー配線電解メッキ方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH1197391A (OSRAM) |
Families Citing this family (14)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH11238704A (ja) * | 1998-02-23 | 1999-08-31 | Ideya:Kk | 半導体基板の配線溝メッキ方法およびメッキ装置 |
| US6123825A (en) * | 1998-12-02 | 2000-09-26 | International Business Machines Corporation | Electromigration-resistant copper microstructure and process of making |
| US6297155B1 (en) * | 1999-05-03 | 2001-10-02 | Motorola Inc. | Method for forming a copper layer over a semiconductor wafer |
| TW466729B (en) * | 1999-07-26 | 2001-12-01 | Tokyo Electron Ltd | Plating method and device, and plating system |
| JP3498306B2 (ja) * | 1999-09-16 | 2004-02-16 | 石原薬品株式会社 | ボイドフリー銅メッキ方法 |
| KR20030095005A (ko) * | 2002-06-11 | 2003-12-18 | 김재정 | 반도체 배선용 금속막 형성 방법 |
| JP2005039142A (ja) | 2003-07-18 | 2005-02-10 | Nec Electronics Corp | 半導体装置の製造方法 |
| KR101487708B1 (ko) * | 2007-10-30 | 2015-01-29 | 에이씨엠 리서치 (상하이) 인코포레이티드 | 전해질 용액으로부터 금속배선 형성을 위해 웨이퍼 표면을 프리웨팅하는 방법 및 장치 |
| US9295167B2 (en) | 2007-10-30 | 2016-03-22 | Acm Research (Shanghai) Inc. | Method to prewet wafer surface |
| JP5504147B2 (ja) | 2010-12-21 | 2014-05-28 | 株式会社荏原製作所 | 電気めっき方法 |
| JP5394461B2 (ja) * | 2011-06-28 | 2014-01-22 | シャープ株式会社 | 光半導体素子の製造方法 |
| US10329683B2 (en) | 2016-11-03 | 2019-06-25 | Lam Research Corporation | Process for optimizing cobalt electrofill using sacrificial oxidants |
| JP6899649B2 (ja) * | 2016-12-01 | 2021-07-07 | 株式会社カネカ | 太陽電池の製造方法、および電極形成用めっき装置 |
| WO2019130859A1 (ja) * | 2017-12-27 | 2019-07-04 | 株式会社カネカ | 光電変換素子の製造方法及びめっき用治具、めっき装置 |
-
1997
- 1997-09-16 JP JP26933797A patent/JPH1197391A/ja active Pending
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| AU765242B2 (en) | Electrodeposition of metals in small recesses using modulated electric fields | |
| US6203684B1 (en) | Pulse reverse electrodeposition for metallization and planarization of a semiconductor substrates | |
| US6881318B2 (en) | Dynamic pulse plating for high aspect ratio features | |
| US6319384B1 (en) | Pulse reverse electrodeposition for metallization and planarization of semiconductor substrates | |
| US6524461B2 (en) | Electrodeposition of metals in small recesses using modulated electric fields | |
| US20120279864A1 (en) | Process for electroplating metals into microscopic recessed features | |
| US6878259B2 (en) | Pulse reverse electrodeposition for metallization and planarization of semiconductor substrates | |
| JPH1197391A5 (OSRAM) | ||
| CN1433487A (zh) | 在衬底上电沉积具有最小边缘隔绝的均匀薄膜的方法和设备 | |
| EP1132500A2 (en) | Method for electrochemical deposition of metal using modulated waveforms | |
| CN102939408B (zh) | 铜电镀组合物和使用该组合物填充半导体衬底中的空腔的方法 | |
| JPH1197391A (ja) | 半導体ウエハー配線電解メッキ方法 | |
| JP3939124B2 (ja) | 配線形成方法 | |
| KR20010015297A (ko) | 전기적 펄스 변조를 이용하는 고 종횡비 구조를 위한 전기화학적 증착 | |
| CN1259460C (zh) | 一种避免电镀沉积铜装置沉积的薄膜生成空穴的方法 | |
| EP3768880A1 (en) | Process for electrodeposition of cobalt | |
| JP4212905B2 (ja) | めっき方法およびこれに使用するめっき装置 | |
| US20080083624A1 (en) | Electrolysis Plating System | |
| US11384445B2 (en) | Process for electrodeposition of cobalt | |
| CN100449710C (zh) | 电化学电镀半导体晶圆的方法及其电镀装置 | |
| US20030188974A1 (en) | Homogeneous copper-tin alloy plating for enhancement of electro-migration resistance in interconnects | |
| CN1534112A (zh) | 一种避免电镀沉积铜薄膜生成空穴的装置及其使用方法 | |
| Lee et al. | Pulsed Electrodeposition of Copper from Alkaline and Acid Baths for Metallization in Integrated Circuits | |
| TW202235687A (zh) | 用於鈷電沉積之電解液及方法 | |
| JP2006265735A (ja) | 微細Viaホールを有する基板への電解めっき方法 |