JPH118546A5 - - Google Patents

Info

Publication number
JPH118546A5
JPH118546A5 JP1998114600A JP11460098A JPH118546A5 JP H118546 A5 JPH118546 A5 JP H118546A5 JP 1998114600 A JP1998114600 A JP 1998114600A JP 11460098 A JP11460098 A JP 11460098A JP H118546 A5 JPH118546 A5 JP H118546A5
Authority
JP
Japan
Prior art keywords
nmos transistor
pmos transistor
transistor
pmos
nmos
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1998114600A
Other languages
English (en)
Japanese (ja)
Other versions
JPH118546A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP10114600A priority Critical patent/JPH118546A/ja
Priority claimed from JP10114600A external-priority patent/JPH118546A/ja
Publication of JPH118546A publication Critical patent/JPH118546A/ja
Publication of JPH118546A5 publication Critical patent/JPH118546A5/ja
Pending legal-status Critical Current

Links

JP10114600A 1997-04-24 1998-04-24 Ｃｍｏｓ回路 Pending JPH118546A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10114600A JPH118546A (ja) 1997-04-24 1998-04-24 Ｃｍｏｓ回路

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP9-107059 1997-04-24
JP10705997 1997-04-24
JP10114600A JPH118546A (ja) 1997-04-24 1998-04-24 Ｃｍｏｓ回路

Publications (2)

Publication Number Publication Date
JPH118546A JPH118546A (ja) 1999-01-12
JPH118546A5 true JPH118546A5 (enExample) 2005-09-08

Family

ID=26447125

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10114600A Pending JPH118546A (ja) 1997-04-24 1998-04-24 Ｃｍｏｓ回路

Country Status (1)

Country Link
JP (1) JPH118546A (enExample)

Families Citing this family (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3326472A1 (de) * 1983-07-22 1985-02-14 Hoechst Ag, 6230 Frankfurt Neue insulin-derivate, verfahren zu deren herstellung und deren verwendung sowie pharmazeutische mittel zur behandlung des diabetes mellitus
JP2001085958A (ja) 1999-09-10 2001-03-30 Toshiba Corp 増幅回路
JP4819275B2 (ja) * 1999-12-22 2011-11-24 テレフオンアクチーボラゲット エル エム エリクソン（パブル） 小さな高調波成分を有する低電力信号ドライバ
EP2107679A3 (en) * 2004-02-04 2010-01-20 Japan Aerospace Exploration Agency Single-event-effect tolerant SOI-based logic device
US7142018B2 (en) * 2004-06-08 2006-11-28 Transmeta Corporation Circuits and methods for detecting and assisting wire transitions
JP5030373B2 (ja) * 2004-08-25 2012-09-19 三菱重工業株式会社 半導体回路
KR101169263B1 (ko) * 2004-12-13 2012-08-02 가부시키가이샤 한도오따이 에네루기 켄큐쇼 반도체 장치 및 이를 이용하는 전자 기기
US20080115023A1 (en) * 2006-10-27 2008-05-15 Honeywell International Inc. Set hardened register
JP5151413B2 (ja) * 2007-11-20 2013-02-27 富士通セミコンダクター株式会社 データ保持回路
JP2009188904A (ja) * 2008-02-08 2009-08-20 Seiko Epson Corp 遅延回路
JPWO2022196303A1 (enExample) * 2021-03-18 2022-09-22

Similar Documents

Publication Publication Date Title
JP2003515259A5 (enExample)
JP2000151378A5 (enExample)
DE69941383D1 (de) Logische Schaltung in Stromschaltertechnik
WO2001099153A3 (en) A negative differential resistance device and method of operating same
EP0944094A3 (en) Flash memory with improved erasability and its circuitry
JPH118546A5 (enExample)
KR960012000A (ko) 부트스트랩회로
KR930005371A (ko) 반도체 집적회로의 출력회로
HK1046471A1 (zh) 製造以單一額外屏蔽注入方式運作的雙閾限電壓n-溝道及p-溝道mosfets
WO2004027831A3 (en) Fast dynamic low-voltage current mirror with compensated error
ATE405990T1 (de) Mos-schaltnetzwerk
JP2001292563A5 (enExample)
AU2003230038A1 (en) Reference circuit
DE69226909D1 (de) Logik-Schaltung mit vertikal gestapelten Heteroübergangsfeldeffekttransistoren
DE60040048D1 (de) Analogschalter mit zwei komplementären MOS-Feldeffekttransistoren
TW200505160A (en) Mixed-voltage CMOS I/O buffer with thin oxide device and dynamic n-well bias circuit
TW200623630A (en) Voltage detection circuit
DE60006529D1 (de) Stromgesteuerter feldeffekttransistor
JPH10149678A5 (enExample)
TW200608567A (en) High voltage tolerance output stage
JP3927312B2 (ja) 入力増幅器
KR100973137B1 (ko) 부트스트랩회로
KR940000254Y1 (ko) 멀티게이트 시모스에 의한 배타 오아게이트
JPS5624623A (en) Transistor device
DE69127040D1 (de) Integrierte Halbleiterschaltung aus P-Kanal MOS-Transistoren mit verschiedenen Schwellenspannungen