JPH118238A5 - - Google Patents

Info

Publication number
JPH118238A5
JPH118238A5 JP1997175215A JP17521597A JPH118238A5 JP H118238 A5 JPH118238 A5 JP H118238A5 JP 1997175215 A JP1997175215 A JP 1997175215A JP 17521597 A JP17521597 A JP 17521597A JP H118238 A5 JPH118238 A5 JP H118238A5
Authority
JP
Japan
Prior art keywords
plasma
thin film
substrate
forming
silicon oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997175215A
Other languages
English (en)
Japanese (ja)
Other versions
JPH118238A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP17521597A priority Critical patent/JPH118238A/ja
Priority claimed from JP17521597A external-priority patent/JPH118238A/ja
Publication of JPH118238A publication Critical patent/JPH118238A/ja
Publication of JPH118238A5 publication Critical patent/JPH118238A5/ja
Pending legal-status Critical Current

Links

JP17521597A 1997-06-16 1997-06-16 初期パーティクルの発生を抑制した酸化シリコン薄膜の形成方法 Pending JPH118238A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17521597A JPH118238A (ja) 1997-06-16 1997-06-16 初期パーティクルの発生を抑制した酸化シリコン薄膜の形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17521597A JPH118238A (ja) 1997-06-16 1997-06-16 初期パーティクルの発生を抑制した酸化シリコン薄膜の形成方法

Publications (2)

Publication Number Publication Date
JPH118238A JPH118238A (ja) 1999-01-12
JPH118238A5 true JPH118238A5 (enrdf_load_html_response) 2005-03-17

Family

ID=15992314

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17521597A Pending JPH118238A (ja) 1997-06-16 1997-06-16 初期パーティクルの発生を抑制した酸化シリコン薄膜の形成方法

Country Status (1)

Country Link
JP (1) JPH118238A (enrdf_load_html_response)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9496405B2 (en) * 2010-05-20 2016-11-15 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device including step of adding cation to oxide semiconductor layer
JP5395931B2 (ja) * 2012-06-21 2014-01-22 東レエンジニアリング株式会社 半導体チップのチップｉｄマーキング方法及びマーキング装置
EP3355338A1 (en) * 2017-01-25 2018-08-01 Sergueï Mikhailov Apparatus and method for surface processing
US20220119952A1 (en) * 2020-10-20 2022-04-21 Applied Materials, Inc. Method of reducing defects in a multi-layer pecvd teos oxide film

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