575912 玖、發明說明 【發明所屬之技術領域】 本申請案主張於2002年1月23日在韓國智慧財產局 提出之韓國專利申請案第2002-3863號之優先權，其之揭示 內容在此整體合倂以爲參考。 本發明係關於一種沉積薄膜之方法，且更具體地說， 係關於一種使用磁場和原子層沉積（ALD)形成一薄膜之方法 ，以在製造一半導體晶圓，一平面顯示裝置或類似者時， 於較低溫度上獲得一高純度薄膜。 【先前技術】 在製造一高度積體晶片時，主要使用利用原子層沉積 (ALD)之習知薄膜沉積方法，因爲可在比使用化學汽相沉積 (CVD)時來得低的溫度上使用ALD來形成一薄膜。 圖2A至2D說明了反應氣體之粒子如何於一半導體晶 圓w上反應。詳細地說，圖2A顯示了當送入第一反應氣體 ABn時，一第一反應氣體ABn與半導體晶圓w之反應。圖 2B顯示了第一反應氣體ABn之淨化。圖2C顯示了當在由 半導體晶圓所吸收之第一反應氣體ABn上噴灑第二反應氣 體CDm時，一第二反應氣體CDm與第一反應氣體ABn之 反應。圖2D顯示在形成構成一薄膜之原子層之後，諸如惰 性氣體以及副加產物氣體BD之其他氣體之淨化。 對一薄膜之沉積來說，首先將熱加至一半導體基板或 一半導體晶圓（在下文中稱爲一 ”晶圓w”）。晶圓w之加熱以 7 575912 顯示於圖1中之期間UMb)加以說明’其中將晶圓加熱至比 在一反應容器內之溫度來得低的溫度。又，在晶圓w之加 熱期間，持續地將一固定量之惰性氣體引入反應容器中以 供淨化之用。 在一^期間（b)-(c)中’將弟一^反應氣體ABn送入反應容 器中。在此，A和B標記了特定的化學元素，且η設定爲2 。如圖2Α中所示般，第一反應氣體ΑΒη之粒子在此期間 裡由晶圚w加以吸收。 如圖2Β中所示般，一期間（c)-(d)標記一淨化期間，在 其期間淨化未由晶圓w所吸收之剩餘的第一反應氣體ABn 〇 在一期間（dMe)中，將第二反應氣體CDm送入反應容 器中。在此’ C和D標gS特定化學兀素而m設定爲3。在 此期間裡，將第二反應氣體CDm噴在覆以第一反應氣體 ABn之晶圓上，在該處其取代第一反應氣體ABn，如圖2C 中之圓圏所指示的。結果，如圖2D中所示般，在晶圓w上 形成一薄膜AC之原子層。 在一期間（e)-(f)中，從反應容器中淨化第二反應氣體 CDm。此時，在形成薄膜AC時未使用到之第二反應氣體 CDm以及一副加產物氣體BD從反應容器中排出。事實上 ，薄膜AC之形成過程持續，直到此期間爲止。 之後，在下文中將稱爲一程序循環之（b)-(f)之期間重覆 許多次以將薄膜在晶圓w上形成至一所要的厚度。在反應 容器中所產生之熱分解能量使得能以第二反應氣體CDm來 8 575912 取代第一反應氣體ABn。 然而，在習知之ALD薄膜沉積方法中，以一第二反應 氣體來取代第一反應氣體只依賴熱分解能量，而且薄膜之 形成較使用CVD來得慢，其中CVD於一較高溫度上形成 一薄膜。因此，具有於一較低溫度上使用ALD而更快速地 沉積薄膜之需求。 【發明內容】 本發明提供一種使用磁場和原子層沉積（ALD)來形成一 薄膜之方法，藉其可比以化學汽相沉積（CVD)更快速地沉積 具有優良的電氣和步階覆蓋特性之高純度薄膜。 、 根據本發明之一觀點提供了 一種使用原子層沉積（ALD) 形成薄膜之方法，該方法係以一 ALD反應容器執行，其包 括一透過一晶圓傳送孔將一晶圓傳送至其上之反應器區塊 ，一安裝於反應器區塊中且在其上放置晶圓之晶圓區塊， 一朝向晶圓噴灑第一和第二反應氣體之噴灑頭，一將反應 器區塊中之氣體排出反應容器外之排放裝置，以及在整個 晶圓區塊上施加磁場之磁場產生器。 該方法包括將晶圓放置於晶圓區塊上；在整個晶圓上 形成磁場；執行如下所示的循環程序：藉由噴灑一惰性氣 體和第一反應氣體之混合物噴灑於晶圓上來將第一反應氣 體送至晶圓上，將第一反應氣體從反應容器淨化，藉由噴 灑一惰性氣體和第一反應氣體之混合物於晶圓上來送入第 二反應氣體以及將第二反應氣體從反應容器中淨化；以及 9 575912 重覆地以預定次數執行循環程序以將薄膜形成至一所要的 厚度。可於送入第一反應氣體和送入第二反應氣體至少之 一期間於晶圓上形成電漿。 改變磁場強度以調整能量強度，該能量強度係用以激 發第一和第二反應氣體之間之取代反應。 在預定次數之循環程序期間所施加之磁場設定爲大於 在剩餘循環期間所應用之磁場強度，以改進接觸一下方層 之薄膜純度。 於沉積薄膜期間，將噴灑至噴灑頭上之惰性氣體之流 動速率保持爲固定。 該方法進一步包括在薄膜上執行熱處理，該熱處理包 含將惰性氣體和反應氣體之混合物噴灑至晶圓上，同時在 整個晶圓上施加磁場。 所施加的磁場均勻地分佈在整個晶圓。 磁場產生器繞著反應容器旋轉以晶圓的水平方向旋轉 磁場。 根據本發明之其他觀點，提供一種使用ALD形成薄膜 之方法，該方法係由一 ALD反應容器加以執行，該容器包 括一在其上放置一晶圓之晶圓區塊，一噴灑一第一反應氣 體和一第二反應氣體於晶圓之一側上之氣體分隔器，一將 氣體排出反應容器外部之排放裝置，以及在整個晶圓區塊 上施加磁場之磁場產生器。該方法包括將晶圓放置於晶圓 區塊上；在整個晶圓上形成磁場；以及執行如下列之循環 程序：藉由噴灑一惰性氣體和第一反應氣體之混合物噴灑 10 575912 於晶圓上來將第一反應氣體送至晶圓上，將第一反應氣體 從反應容器淨化，藉由噴灑一惰性氣體和第二反應氣體之 混合物於晶圓上來送入第二反應氣體以及將第二反應氣體 從反應容器中淨化；以及以預定次數重覆地執行該循環程 序以將薄膜形成至一所要的厚度。 在送入第一反應氣體和送入第二反應氣體至少之一期 間於晶圓上形成電漿。 在施加預定次數之循環程序期間所施加之磁場設定爲 大於在剩餘循環期間所應用之磁場強度，以改進接觸一下 方層之薄膜純度。 於薄膜之沉積期間，將噴灑至反應容器上之惰性氣體 的流動速率保持爲固定。 該方法進一步包括在薄膜上執行熱處理，該熱處理包 含將惰性氣體和反應氣體之混合物噴灑至晶圓上，同時在 整個晶圓上施加磁場。 磁場產生器係安裝於反應容器上，且繞著反應容器旋 轉以晶圓的水平方向旋轉磁場。 【實施方式】 圖3爲一根據本發明之一第一實施例來說明用以執行 一使用ALD來形成一薄膜之方法之反應容器之結構。圖4 說明了圖3之反應容器中所包括之一磁場產生器以及一晶 圓區塊。圖5爲一說明由圖3之反應容器所執行之使用 ALD形成一薄膜之方法之圖形。圖6爲一說明在將第二反 11 575912 應氣體噴灑於晶圓上，同時將磁場加至晶圓上時’ 一第二 反應氣體與一由晶圓所吸收之第一反應氣體之反應之圖形 。圖7爲一說明使用ALD形成一薄膜之方法之流程圖，該 方法係如圖6中所示般，由圖3之反應容器所執行。 圖3之反應容器包括一反應區塊20，其具有一傳送孔 21，經由其將晶圓w由一傳送模組10供應至反應容器中； 一安裝於反應器區塊20中且在其上放置晶圓w之晶圓區塊 30 ;與反應器區塊20組合之頂端平板40，如此使得完全地 覆蓋反應器區塊20 ; —與頂端平板40之底部組合，之噴灑 頭50,且在其中於預先決定之間隔上形成一第一噴灑孔51 以及一第二噴灑孔52，以朝向晶圓w來噴灑所供應之第一 和第二反應氣體；一排放裝置，其將氣體從反應器區塊20 中排向反應容器之外部；以及一磁場產生器60，其在晶圓 區塊30上應用磁場。在晶圓w之方向上，於預先決定之間 隔上於噴灑頭50中形成第一和第二噴灑孔51和52。 磁場產生器60包括一位於恰於反應器區塊20之周邊 外部上的旋轉框61，至少二個位於旋轉框61中之磁鐵63 ，以及一將旋轉框61加以旋轉之旋轉驅動單元65。磁鐵 63可爲永久磁鐵或電磁。圖4說明了包括於磁場產生器60 中之磁鐵63之位置，以及晶圓區塊30。磁鐵以不規則間隔 位於旋轉框61上，如此使得磁場可跨於晶圓區塊30上均 勻地分佈。又，使用磁鐵63應用於晶圓w之上方表面上之 場於一特定方向上均句地分佈。當旋轉框由旋轉驅動單 元65加以旋轉時，形成於晶圓w上之磁場之方向立即連續 12 575912 地改變，例如從一方向B’至一方向B，如圖11中所示般。 同時，磁鐵63必須與圖3之反應容器之壁相關安裝於一特 定尚度上，如此使得在整個晶圓w上施加磁場。 一連接至晶圓區塊支撐器35之升降單元（未顯示）升起 或降低晶圓區塊30以對應於傳送孔21，即升起或降低晶圓 區塊至一處理位置，晶圓w從傳送模組10被傳送至該處。 在沉積一薄膜之前，升降單元將晶圓區塊30升起至一程序 效率爲最高之位置。 又，多個加熱器Η安裝於反應器區塊20中，且一個加 熱器Η安裝於晶圓區塊30中。更具體地說，在晶圓區塊 30中之加熱器Η供應晶圓區塊30能量以供熱沉積之用， 以使得一第一反應氣體可由一第二反應氣體加以取代。另 一加熱器Η將圖3之反應容器之內部維持在一所要之溫度 上，並防止於一薄膜之沉積期間產生之副產品在反應容器 之表面上形成一大量的層。 現在參考圖3和7來解釋使用這樣一個反應容器沉積 一薄膜之方法。該方法係由動作S1至S9構成。 在動作S1中，晶圓w從傳送孔21引入且置於晶圓區 塊30之上。在此動作中，使用一機器人（未使用）將晶圓w 移至晶圓區塊30上。 接下來，在動作S2中，升降單元將晶圓區塊30升起 ，在其上放置晶圓w以將晶圓w移至一所要的處理位置上 〇 在動作S2之後，在動作S3中，磁場產生器60操作以 13 575912 在整個晶圓w上形成磁場。在圖5中所示之期間（a)’-(b)’執 行動作S3，其中將置於反應容器中之晶圓區塊30上之晶圓 w加熱，且磁場產生器60如圖6中所示般在整個晶圓w來 產生磁場B。當包括於磁場產生器60中之磁鐵爲永久磁鐵 時，於動作S2晶圓w被升至處理位置，以在整個晶圓w 上形成磁場B。又，在此動作中，惰性氣體被引入反應容 器中，以淨化反應容器。 同時，在動作S3中加熱晶圓w期間，未將第一和第二 反應氣體送入反應容器，直到晶圓w被放置於晶圓區塊30 上之後’晶圓w被加熱並穩定於一溫度以供沉積一薄膜爲 止。換句話說，在圖5之期間（b)’-(c)’之前，第一和第二反 對氣體未被供應至反應容器以防止一薄膜於比所預期的來 得低的溫度上形成。若一薄膜形成於一較低溫度上，薄膜 之純度和特性會降低。 在動作S3之後，於動作S4中，透過第一噴灑孔51將 一惰性氣體和第一反應氣體ABGn之混合噴灑於晶圓w上 。動作S4於圖5之（b)’-(c)’中加以執行，其中晶圓w之上 方表面吸收了第一反應氣體ABn之粒子。根據本發明之第 一實施例，A和B標記了特定化學元素，且n被設定爲2。 在動作S4之後，中斷第一反應氣體ABn之送入，並以 隋氣淨化反應容器中未由晶圓w所吸收之剩餘第一反應氣 體ABn。動作S4於圖5之期間（c)’-(d)’中加以執行。 接下來，於動作S6中透過第二噴灑孔52將惰性氣體 和第二反應氣體CDm之混合噴灑於晶圓w上。動作s6於 14 575912 一期間（d)’-(e)’中加以執行，其中以送入反應容器中之第二 反應氣體CDm來取代塗覆於晶圓w上之第一反應氣體ABn ，如圖6中之圓圈所指出的。根據第一實施例，C和D標 記特定化學兀素，並將m設定爲3。 在動作S6中，磁場B協助已塗覆於晶圓w上之第一反 應氣體ABn可容易地被第二反應氣體CDm加以取代。一取 代反應牽涉到在分子之間之電子之交換，且如此可更由磁 場B和供熱分解用之能量激發。即，磁場B冶不增加了電 子之動量來加速第二反應氣體對第一反應氣體之取代反應 ，亦增加了飽和表面反應速度，藉此使得一單一原子層能 夠均勻地形成於晶圓w上。換句話說，以此方式，獲得一 均勻高純度薄膜而不增加晶圓w之溫度，同時減少了第一 和第二反應氣體之量以及花費在送入和淨化氣體上的時間 是可能的。圖1和5之圖形之比較透露了根據本發明之薄 膜沉積方法之這些優點。參考圖5，根據本發明使用磁場B 之薄膜沉積方法需要比圖1之傳統薄膜沉積方法來得少的 程序循環，一程序循環指期間（b)’-(f)’之重覆以得到一薄膜 。程序循環之數目之減少結果爲沉積一高純度薄膜AC所需 之時間之減少。 在動作S6之後，中止第二反應氣體CDm之送入，並 於動作S7中，使用一惰性氣體淨化反應容器中未由晶圓w 所吸收之剩餘第二反應氣體CDm。動作S7於一期間（eV-Ur中加以執行， 其中將在薄膜 AC 之形成期間未使用到之 第二反應氣體CDm以及副產品BD排出反應容器。於動作 15 575912 S7中大致得到薄膜AC。 在一程序循環（期間（b)’-(f)’）之後，將一單一薄膜形成 於晶圓w上。藉由重覆期間（b)’-(f)’適當的次數，可將一薄 膜形成至一所要的厚度。總結來說，形成一單一薄膜之一 程序循環對應於期間（b)’-(f)’，其包括：⑴期間（b)’-(c)’，在 其中將第一反應氣體ABn送入反應容器中；（ii)期間（c)’- (d) ’，其中淨化第一反應氣體ABn ; (iii)期間⑷’-(e)’，其 中將第二反應氣體CDm送入反應容器中；以及（iv)期間 (e) ’-(f)’，其中淨化第二反應氣體CDm。 在動作S7之後，在藉由執行一由上面四個期間所構成 之一程序循環來形成一由一單一原子層所構成之薄膜之後 ，在動作S8中，重覆程序循環，即，重覆第一和第二反應 氣體ABn和CDm之送入和淨化，直到薄膜達到一所要的厚 度爲止。 在動作S8之後，當薄膜達到所要的厚度時，在動作S9 中，藉由將諸如H2，NH3和N2之反應氣體噴灑至晶圓w 上，於在其上形成有至所要厚度之薄膜之晶圓w上執行熱 處理。執行熱處理以增加所獲得之薄膜之純度，即，減少 在薄膜中所獲得之雜質之含量。 一般來說，晶圓之溫度越高，在減少薄膜中之雜質之 濃度時熱處理更有效率，以改進薄膜之品質。然而，晶圓 之增加結果爲溫度增加而傷害晶圓。因此理由，於一較低 溫度上執行熱處理，同時將磁場B加至晶圓上。以此方式 ，在薄膜中之雜質之濃度可加以減少，以增加薄膜之品質 16 575912 ，同時減少對晶圓之損害。即’磁場之使用協助減少一薄 膜中之雜質之含量，並改進薄膜之品質。 如上面所說明的，可藉由應用熱分解能量和磁場至一 晶圓上，並改變磁場之強度來調整用以啓動第一和第二反 應氣體間之取代反應之能量之強度。 同時，將一循環，即期間（b)’-(f)’重覆地執行一預先決 定之次數以將一薄膜形成至所要的100A之厚度。可調整磁 場之強度以改進接觸一下方層之薄膜之純度。讓我們假設 將一單一程序循環重覆執行約三十次以將一薄膜形成至一 100A之厚度，若在三十個循環中的五個期間所應用之磁場 之強度設定爲大於在其他二十五個循環期間所應用之磁場 之強度，則接觸下方層之薄膜之純度可增加。 、 又，在薄膜之沉積期間，惰性氣體流入反應容器之速 率最好調整爲一致，藉此使得反應容器中之壓力保持爲規 律固.定。 再者，在根據本發明之第一實施例之薄膜沉積方法中 ，由磁場產生器60所產生之磁場可可旋轉晶圓w。然而， 因爲在此方法中未使用電漿，所以因爲磁場之故，另外無 需磁場之旋轉來防止電漿密度中之不均衡。 圖8爲一根據本發明之第二實施例，說明一用以執行 使用ALD來形成一薄膜之方法之反應容器之圖形。圖9爲 一說明一當第二反應氣體噴灑於晶圓上，同時將一磁場和 電獎應用至晶圓時，第二反應氣體與由一晶圓所吸收之第 一反應氣體之反應。圖1〇爲一說明一使用ALD形成薄膜 17 575912 之方法之流程圖，該方法係由圖9之反應容器加以執行。 圖11爲一說明在其上整個水平磁場旋轉之晶圓之圖形。在 此，與圖3至6中相同之元素將以相同之參考數字指示， 且其說明不加以重覆。 根據第二實施例，圖8中所示之反應容器與圖3者不 同，因爲在第一反應氣體之送入和第二反應氣體之送入至 少之一期間，電漿進一步地於一晶圓w上形成。在此，爲 了方便，將假設電漿於第二反應氣體之送入期間加以形成 〇 爲了形成電漿，首先將一晶圓區塊30和一噴灑頭50 之間應用電能以在其之間形成電漿P。即，使用電能量來 獲得電漿P，且電漿在雖使用了熱分解能量和磁場但仍難 以得到一高純度薄膜時是有用的。電漿P啓動了第一和第 二有應氣體之間的取代反應。 詳細地說，當電能量由一射頻（RF)電源71產生，通過 一 RF匹配盒73和一電容器75，最後加至一位於晶圓區塊 30中之RF極板77時，在晶圓區塊30和噴灑頭50之間形 成電漿P。因爲形成於晶圓w上之磁場之故，電漿位於晶 圓w之中心上。如此，在晶圓w之中心上，電漿之密度會 增加。在此情況中，電漿P之能量被傳送至第一和第二反 應氣體透過其流動之氣體線51a和51b是不想要的。因此 ，不使電漿流經氣體線51a和51b是重要的。因此理由， 噴灑頭50最好由一接觸一頂端平板40且由一例如石英之 絕隔材料所構成之第一噴灑板和被接地且以一諸如鋁之金 18 575912 屬所構成之第二噴灑板所構成。又’噴灑頭50之外部係由 石英，陶瓷，或類似者所構成。以此方式，噴灑頭50和反 應容器之壁可電氣絕緣，且再者’一電漿雲可形成於晶圓 w上，而不與氣體線51a和51b相鄰。 使用圖8之反應容器之薄膜沉積方法幾乎與當使用圖3 之反應容器時相同，除了於沉積薄膜期間’當送入和淨化 第一和/或第二反應氣體時產生電漿P並加以消除。電漿P 之產生和消除在二反應氣體至少之一被供應至反應容器時 發生。詳細地說，根據第二實施例，電漿P於一期間（c)’’-(d)’’期間形成，即當淨化第一反應氣體（S5’），或恰在送入 第二反應氣體（S6’）之後。又，在淨化第二反應氣體（S7’）期 間消除電漿P，即一期間（e)’’-(f)’’期間。電漿P何以恰在 第二反應氣體送入之前和之後形成之理由係爲了在形成薄 膜時，盡可能地加速第一反應氣體在晶圓w上之反應。應 用電漿P之脈衝，直到薄膜之形成完成爲止。 一般來說，氫氣（H2)用來做爲第二反應氣體，且與電 漿P同步地噴灑至晶圓w上。在此情況中，第一反應氣體 可爲一金屬有機化合物。當金屬有機化合物噴灑至晶圓w 上時，電漿P之形成被壓制，以防止金屬有機化合物因爲 電漿P之故而分解。以此方式，使得粒子之產生或低品質 薄膜之形成是可能的。 爲了一致地於晶圓w上形成電漿P，磁場必須僅在一 方向上分佈跨於晶圓w。又，必須將程序之壓力保持在一 預先決定之位準上，以均勻地將一薄膜形成至一所要的厚 19 575912 度，一致地繙持薄膜之特性，並穩定所形成的電漿P，一 處理諸如程序溫度之條件。因此，惰性氣體之流動速率必 須總是固定。如在根據第一實施例之方法中一般，將薄膜 沉積至一所要的厚度，且然後，可藉由噴灑惰性氣體和一 相關反應氣體之混合物至晶圓w上，同時將磁場應用至晶 圓w來進一步執行熱處理。 當於晶圓w上形成電漿P時，有一較高的可能性會圍 繞電漿P形成許多離子化氣體分子和電子雲。若電漿雲P 於晶圓w上形成爲厚且均勻，則要容易地均勻形成薄膜是 可能的。磁場之應用結果造成電漿雲P之密度之增加。當 磁場加在跨於晶圓w上時，一力量ExB，即勞倫斯力轉移 至離子，且離子做擺線運動，如圖9中所示般，藉此增加 電漿雲之密度。電漿雲密度之增加可能造成反應氣體分子 與晶圓w之磁撞增加，且如此造成所形成之薄膜之密度增 加。 同時，勞倫斯力造成電漿P之密度上的不平衡。更具 體地說，藉由引入離子之擺線運動，勞倫斯力不只增加了 電漿P之密度，亦使得電漿雲中的許多電子和磁場線成直 角地漂移。此電子之漂移運動使得在晶圓w上存在之電子 密度不均勻。即，使得形成於晶圓w上之電漿P之密度不 均勻，且結果，不均勻地形成薄膜。 爲了解決此問題，磁鐵63適當地配置於一旋轉框架61 上以均勻地將水平磁場B在整個晶圓w上於一方向上分布 ，如圖4中所示般。又，使用一旋轉驅動單元65來將旋轉 20 575912 框架61旋轉，以旋轉水平磁場]b，來防止電子在一特定方 向上漂移。以此方式，所有磁鐵63旋轉，且水平磁場b逐 步地在一方向上旋轉，如圖11中所示般。根據本發明之第 二實施例’要完成薄膜沉積方法，水平磁場B之旋轉是不 必要的。 圖12爲一說明了用以執行根據本發明之第三實施例， 使用ALD來形成一薄膜之方法之反應容器之圖形。圖13 爲一說明使用ALD來形成一薄膜之方法之圖形，該方法係 由圖12之反應容器加以執行。與圖3至11中相同之元件 將以相同之參考數字指示，且將不重覆其說明。 根據第三實施例，反應容器爲一流動型式容器，其包 括一在其上放置晶圓w之晶圓區塊130 ; —從晶圓w之側 邊上噴灑一第一反應氣體和一第二反應氣體之氣體分隔器 150 ; —將氣體排出反應容器外之排放裝置；以及一在整個 晶圓區塊130上施加磁場之磁場產生器160。根據第三實施 例之反應容器與根據第一和第二實施例者不同之處在於第 一和第二反應氣體係從晶圓w旁邊噴灑出來，且形成水平 磁場B之電磁或永久磁鐵安裝於反應容器上。雖然磁場產 生器160安裝於反應容器上，但磁場產生器160之結果大 致與在第一和第二實施例中相同。又，水平磁場B在整個 晶圓w上均勻地分布，且使用磁場產生器160於一方向.上 旋轉，如同在第一和第二實施例中。具有纏繞線圏之電磁 之結構，以及永久磁鐵之配置在電漿汽相沉積（PVD)之領域 中是廣爲人知的，且因此，在此將省略其詳細說明。 21 575912 根據第三實施例使用反應容器來形成一薄膜之方法大 致與在第一和第二實施例中者相同。即，根據本發明，將 電漿加至晶圓W以激發在第一和第二反應氣體之間的取代 反應。 又，若一單一程序循環重覆執行約三十次以將一薄膜 形成至一 100A之厚度，若在三十個循環中之五個期間所加 上的磁場之強度設定爲大於在其他二十五個循環期間所加 上之磁場之強度，則接觸下方層之薄膜之純度亦可增加。 同時，在整個晶圓w上水平地形成磁場B。磁場產生 器160在反應容器上的旋轉將在整個晶圓w之磁場B加以 旋轉。 最好在薄膜之沉積期間，惰性氣體送入反應容器之流 動速率保持爲均勻以將反應容器之壓力保持在一預先決定 之大小上。 再者，如在第一和第二實施例中一般，在將薄膜形成 至一所要的厚度之後，藉由噴灑一惰性氣體和一相關反應 氣體之混合物至晶圓w上，同時跨於晶圓W應用磁場來進 一步於薄膜上執行熱處理。在熱處理期間，N2，NH3或N2 可用來做爲反應氣體。 在已特定地顯示並參考其之較佳實施例描述了本發明 之同時，熟悉技藝之人士會了解到，可在其中做型式和細 節上的多種不同改變，而不會違反由所附之申請專利範圍 所定義之本發明之精神與範圍。 如上述，在根據本發明之一使用ALD來形成薄膜之方 22 575912 法中，磁場和/或電漿同時加至一晶圓上。因此，在低於使 用CVD之溫度上，快速地形成一具有優良電氣和步階覆蓋 特性之高純度薄膜蔚爲可行。 【圖式簡單說明】 (一）圖式部分 本發明之以上和其他觀點和優點將藉由更詳細地描述 其中之較佳實施例，並參考所附之圖形而變得更爲明顯， 其中： 圖1爲一說明使用原子層沉積（ALD)形成一薄膜之習知 方法圖形； 圖2A爲一說明當送入第一反應氣體時，第一反應氣體 與一晶圓之反應圖形； 圖2B爲一說明第一反應氣體之淨化之圖形； 圖2C爲一說明當送入第二反應氣體時，由晶圓所吸收 之第一反應氣體與第二反應氣體之反應之圖形； 圖2D爲一說明當形成一構成薄膜之原子層時淨化其他 氣體之圖形； 圖3爲一說明根據本發明之一實施例，當執行使用 ALD來形成薄膜之方法時所使用之反應容器之結構圖形； 圖4說明了包括於圖3之反應容器中之磁場產生器和 晶圓區塊； 圖5爲一說明了圖3之反應容器所執行之使用ALD形 成薄膜之方法的圖形； 23 575912 圖6爲一說明當在將磁場應用於晶圓之同時，將第二 反應氣體噴灑於晶圓上時，由晶圓所吸收之第一反應氣體 與第二反應氣體之反應圖形； 圖7爲一說明使用ALD來形成薄膜之方法流程圖，該 方法係由圖3之反應容器所執行，如圖6中所示； 圖8爲一說明用以執行根據本發明之其他實施例使用 ALD來形成薄膜之方法之反應容器圖形； 圖9爲一說明當將磁場和電漿應用至晶圓上之同時將 第二反應氣體噴灑於晶圓上，由晶圓所吸收之第一反應氣 體與第二反應氣體之反應圖形； 圖10爲一說明使用ALD來形成薄膜之方法之流程圖 ’該方法係由圖9之反應容器加以執行； 圖11爲一說明在整個晶圓上水平旋轉之磁場的圖形； 圖12爲一說明根據本發明之第三實施例，用以執行使 用ALD形成薄膜之方法之反應容器圖形；以及 圖13爲一說明使用ALD來形成薄膜方法之圖形，該 方法係由圖12之反應容器加以執行。 (二）元件代表符號 20反應區塊 21傳送孔 10傳送模組 30晶圓區塊 40頂端平板 50噴灑頭 24 575912 51第一噴灑孔 · 51a&51b氣體線 52第二噴灑孔 60磁場產生器 61旋轉框 63磁鐵 65旋轉驅動單元 71射頻電源 0 73RF匹配盒 75電容器 77RF極板 130晶圓區塊 150氣體分隔器 160磁場產生器 25575912 发明 Description of the invention [Technical field to which the invention belongs] This application claims the priority of Korean Patent Application No. 2002-3863, filed in the Korean Intellectual Property Office on January 23, 2002, and its disclosure content is here in its entirety Combined for reference. The present invention relates to a method for depositing a thin film, and more particularly, to a method for forming a thin film using a magnetic field and atomic layer deposition (ALD) to manufacture a semiconductor wafer, a flat display device, or the like. A high-purity film is obtained at a lower temperature. [Prior art] When manufacturing a highly integrated wafer, the conventional thin film deposition method using atomic layer deposition (ALD) is mainly used because ALD can be used at a lower temperature than when using chemical vapor deposition (CVD) A thin film is formed. 2A to 2D illustrate how the particles of the reaction gas react on a semiconductor crystal circle w. In detail, FIG. 2A shows the reaction of a first reaction gas ABn with the semiconductor wafer w when the first reaction gas ABn is fed. Fig. 2B shows the purification of the first reaction gas ABn. Fig. 2C shows the reaction of a second reaction gas CDm with the first reaction gas ABn when the second reaction gas CDm is sprayed on the first reaction gas ABn absorbed by the semiconductor wafer. Fig. 2D shows the purification of other gases such as an inert gas and a by-product gas BD after the atomic layer constituting a thin film is formed. For the deposition of a thin film, heat is first applied to a semiconductor substrate or a semiconductor wafer (hereinafter referred to as a "wafer w"). The heating of the wafer w is illustrated by the period UMb) shown in FIG. 7 575912 in which the wafer is heated to a temperature lower than the temperature in a reaction vessel. In addition, during the heating of the wafer w, a fixed amount of inert gas is continuously introduced into the reaction vessel for purification. During the period (b)-(c), the reaction gas ABn is sent to the reaction vessel. Here, A and B are labeled with specific chemical elements, and η is set to 2. As shown in Fig. 2A, the particles of the first reaction gas Αηη are absorbed by the crystals W during this period. As shown in FIG. 2B, a period (c)-(d) marks a purification period during which the remaining first reaction gas ABn not absorbed by the wafer w is purified in a period (dMe), The second reaction gas CDm is sent into a reaction vessel. Here, 'C and D' indicate gS specific chemical elements and m is set to 3. During this period, the second reaction gas CDm is sprayed on the wafer covered with the first reaction gas ABn, where it replaces the first reaction gas ABn, as indicated by the circle in FIG. 2C. As a result, as shown in FIG. 2D, an atomic layer of a thin film AC is formed on the wafer w. During a period (e)-(f), the second reaction gas CDm is purified from the reaction vessel. At this time, the second reaction gas CDm and a by-product gas BD, which were not used when the thin film AC was formed, are discharged from the reaction vessel. In fact, the film AC formation process continues until this period. Thereafter, the period (b)-(f), which will be hereinafter referred to as a program cycle, is repeated many times to form the film on the wafer w to a desired thickness. The thermal decomposition energy generated in the reaction vessel enables the first reaction gas ABn to be replaced by the second reaction gas CDm 8 575912. However, in the conventional ALD thin film deposition method, replacing a first reaction gas with a second reaction gas relies only on thermal decomposition energy, and the film formation is slower than using CVD, where CVD forms a film at a higher temperature . Therefore, there is a need for faster film deposition using ALD at a lower temperature. [Summary of the Invention] The present invention provides a method for forming a thin film using magnetic field and atomic layer deposition (ALD), which can be deposited faster than chemical vapor deposition (CVD) with high electrical and step coverage characteristics. Purity film. According to an aspect of the present invention, a method for forming a thin film by using atomic layer deposition (ALD) is provided. The method is performed by an ALD reaction container, which includes a wafer transferred to the wafer through a wafer transfer hole. A reactor block, a wafer block installed in the reactor block and a wafer placed thereon, a spray head for spraying the first and second reaction gases toward the wafer, and a A gas discharge device outside the reaction vessel, and a magnetic field generator that applies a magnetic field over the entire wafer block. The method includes placing a wafer on a wafer block; forming a magnetic field over the entire wafer; and performing a cycle procedure as follows: spraying a mixture of an inert gas and a first reaction gas on the wafer to spray the first A reaction gas is sent to the wafer, the first reaction gas is purified from the reaction container, and a second reaction gas is sent to the wafer by spraying a mixture of an inert gas and the first reaction gas on the wafer, and the second reaction gas is sent from the reaction Decontamination in a container; and 9 575912 repeatedly performing a cycle procedure a predetermined number of times to form a film to a desired thickness. Plasma can be formed on the wafer during at least one of the first reaction gas and the second reaction gas. The intensity of the magnetic field is changed to adjust the energy intensity, which is used to initiate a substitution reaction between the first and second reaction gases. The magnetic field applied during the predetermined number of cycles is set to be greater than the magnetic field strength applied during the remaining cycles to improve the purity of the film contacting an underlying layer. During the film deposition, the flow rate of the inert gas sprayed onto the spray head was kept constant. The method further includes performing a heat treatment on the thin film, the heat treatment including spraying a mixture of an inert gas and a reaction gas onto the wafer while applying a magnetic field across the wafer. The applied magnetic field is evenly distributed throughout the wafer. The magnetic field generator rotates around the reaction container to rotate the magnetic field in the horizontal direction of the wafer. According to another aspect of the present invention, a method for forming a thin film using ALD is provided. The method is performed by an ALD reaction container. The container includes a wafer block on which a wafer is placed, and a first reaction is sprayed. A gas separator with a gas and a second reaction gas on one side of the wafer, a discharge device for discharging the gas outside the reaction container, and a magnetic field generator that applies a magnetic field to the entire wafer block. The method includes placing a wafer on a wafer block; forming a magnetic field over the entire wafer; and performing a cyclic process such as: spraying a mixture of an inert gas and a first reaction gas on the wafer by spraying 10 575912 on the wafer The first reaction gas is sent to the wafer, the first reaction gas is purified from the reaction container, and the second reaction gas is sent by spraying a mixture of an inert gas and the second reaction gas on the wafer, and the second reaction gas is sent. Purify from the reaction vessel; and repeatedly execute the cycle procedure a predetermined number of times to form the film to a desired thickness. Plasma is formed on the wafer during at least one of the first reaction gas and the second reaction gas. The applied magnetic field during the predetermined number of cycles is set to be greater than the intensity of the magnetic field applied during the remaining cycles to improve the purity of the thin film in contact with the underlying layer. During the deposition of the film, the flow rate of the inert gas sprayed onto the reaction vessel was kept constant. The method further includes performing a heat treatment on the thin film, the heat treatment including spraying a mixture of an inert gas and a reaction gas onto the wafer while applying a magnetic field across the wafer. The magnetic field generator is installed on the reaction container, and rotates the magnetic field in the horizontal direction of the wafer by rotating around the reaction container. [Embodiment] FIG. 3 illustrates a structure of a reaction container for performing a method of forming a thin film using ALD according to a first embodiment of the present invention. FIG. 4 illustrates a magnetic field generator and a wafer block included in the reaction container of FIG. 3. FIG. 5 is a diagram illustrating a method of forming a thin film using ALD performed by the reaction vessel of FIG. 3. FIG. FIG. 6 is a diagram illustrating the reaction of a second reaction gas and a first reaction gas absorbed by the wafer when a second reaction gas is sprayed on the wafer while a magnetic field is applied to the wafer. Graphics. Fig. 7 is a flowchart illustrating a method of forming a thin film using ALD, which is performed by the reaction container of Fig. 3 as shown in Fig. 6. The reaction container of FIG. 3 includes a reaction block 20 having a transfer hole 21 through which wafers w are supplied from a transfer module 10 into the reaction container; a reactor block 20 is mounted on and above The wafer block 30 on which the wafer w is placed; the top plate 40 combined with the reactor block 20, so that the reactor block 20 is completely covered;-combined with the bottom of the top plate 40, the spray head 50, and A first spraying hole 51 and a second spraying hole 52 are formed at a predetermined interval to spray the supplied first and second reaction gases toward the wafer w; a discharge device that removes the gas from the reactor The block 20 is discharged to the outside of the reaction container; and a magnetic field generator 60 that applies a magnetic field on the wafer block 30. First and second spray holes 51 and 52 are formed in the spray head 50 at predetermined intervals in the direction of the wafer w. The magnetic field generator 60 includes a rotation frame 61 located on the outside just around the periphery of the reactor block 20, at least two magnets 63 located in the rotation frame 61, and a rotation driving unit 65 for rotating the rotation frame 61. The magnet 63 may be a permanent magnet or electromagnetic. FIG. 4 illustrates the position of the magnet 63 included in the magnetic field generator 60 and the wafer block 30. The magnets are located on the rotating frame 61 at irregular intervals, so that the magnetic field can be evenly distributed across the wafer block 30. Also, the field on the upper surface of the wafer w using the magnet 63 is evenly distributed in a specific direction. When the rotation frame is rotated by the rotation driving unit 65, the direction of the magnetic field formed on the wafer w immediately changes continuously 12 575912, for example, from one direction B 'to one direction B, as shown in FIG. At the same time, the magnet 63 must be mounted on a specific degree in relation to the wall of the reaction container of Fig. 3, so that a magnetic field is applied to the entire wafer w. A lifting unit (not shown) connected to the wafer block supporter 35 raises or lowers the wafer block 30 to correspond to the transfer hole 21, that is, raises or lowers the wafer block to a processing position, and the wafer w It is transferred from the transfer module 10 there. Before depositing a thin film, the elevating unit raises the wafer block 30 to a position where the process efficiency is the highest. Also, a plurality of heaters Η are installed in the reactor block 20, and one heater Η is installed in the wafer block 30. More specifically, the heater Η in the wafer block 30 supplies the energy of the wafer block 30 for thermal deposition, so that a first reaction gas can be replaced by a second reaction gas. Another heater Η maintains the inside of the reaction vessel of Fig. 3 at a desired temperature and prevents by-products generated during the deposition of a thin film from forming a large number of layers on the surface of the reaction vessel. A method of depositing a thin film using such a reaction vessel will now be explained with reference to Figs. This method consists of actions S1 to S9. In action S1, the wafer w is introduced from the transfer hole 21 and placed on the wafer block 30. In this action, a robot (unused) is used to move the wafer w onto the wafer block 30. Next, in operation S2, the elevating unit raises the wafer block 30, and places a wafer w thereon to move the wafer w to a desired processing position. After operation S2, in operation S3, The magnetic field generator 60 operates at 13 575912 to form a magnetic field over the entire wafer w. During the period (a) '-(b)' shown in FIG. 5, action S3 is performed, in which the wafer w placed on the wafer block 30 in the reaction container is heated, and the magnetic field generator 60 is as shown in FIG. A magnetic field B is generated throughout the wafer w as shown. When the magnet included in the magnetic field generator 60 is a permanent magnet, the wafer w is raised to a processing position in operation S2 to form a magnetic field B on the entire wafer w. In this operation, an inert gas is introduced into the reaction vessel to purify the reaction vessel. At the same time, during the heating of the wafer w in action S3, the first and second reaction gases are not sent into the reaction container until the wafer w is placed on the wafer block 30 after the 'wafer w is heated and stabilized at a Temperature for deposition of a thin film. In other words, before the period (b) '-(c)' of Fig. 5, the first and second opposing gases were not supplied to the reaction vessel to prevent a film from being formed at a temperature lower than expected. If a thin film is formed at a lower temperature, the purity and characteristics of the thin film are reduced. After action S3, in action S4, a mixture of an inert gas and a first reaction gas ABGn is sprayed on the wafer w through the first spray hole 51. Action S4 is performed in (b) '-(c)' of FIG. 5, in which particles above the wafer w have the first reaction gas ABn absorbed. According to the first embodiment of the present invention, A and B are labeled with specific chemical elements, and n is set to two. After action S4, the feeding of the first reaction gas ABn is interrupted, and the remaining first reaction gas ABn not absorbed by the wafer w in the reaction container is purged with inert gas. Action S4 is performed during periods (c) '-(d)' in FIG. Next, in operation S6, the mixture of the inert gas and the second reaction gas CDm is sprayed onto the wafer w through the second spray hole 52. Action s6 is performed in a period (d) '-(e)' of 14 575912, in which the second reaction gas CDm sent into the reaction container is used to replace the first reaction gas ABn coated on the wafer w, such as The circles in Figure 6 indicate this. According to the first embodiment, C and D mark specific chemical elements, and m is set to 3. In action S6, the magnetic field B assists the first reaction gas ABn, which has been coated on the wafer w, to be easily replaced with the second reaction gas CDm. An alternative reaction involves the exchange of electrons between molecules, and as such can be more excited by the magnetic field B and the energy used for thermal decomposition. That is, the magnetic field B does not increase the momentum of the electrons to accelerate the substitution reaction of the second reaction gas to the first reaction gas, and also increases the saturation surface reaction speed, thereby enabling a single atomic layer to be uniformly formed on the wafer w. . In other words, in this way, it is possible to obtain a uniform high-purity film without increasing the temperature of the wafer w while reducing the amount of the first and second reaction gases and the time spent on the feeding and purge gases. A comparison of the figures of Figures 1 and 5 reveals these advantages of the thin film deposition method according to the present invention. Referring to FIG. 5, the thin film deposition method using the magnetic field B according to the present invention requires fewer program cycles than the conventional thin film deposition method of FIG. 1. A program cycle refers to the duplication of (b) '-(f)' to obtain a film . The reduction in the number of program cycles results in a reduction in the time required to deposit a high-purity thin film AC. After the operation S6, the feeding of the second reaction gas CDm is stopped, and in the operation S7, an inert gas is used to purify the remaining second reaction gas CDm which is not absorbed by the wafer w in the reaction container. Action S7 is performed in a period (eV-Ur), in which the second reaction gas CDm and the by-product BD that are not used during the formation of the thin-film AC are discharged from the reaction container. The thin-film AC is roughly obtained in action 15 575912 S7. After a program cycle (periods (b) '-(f)'), a single thin film is formed on the wafer w. By repeating the appropriate number of periods (b) '-(f)', a thin film can be formed To a desired thickness. In summary, one program cycle to form a single film corresponds to period (b) '-(f)', which includes: (i) period (b) '-(c)', in which the first A reaction gas ABn is sent to the reaction container; (ii) period (c) '-(d)', in which the first reaction gas ABn is purified; (iii) period ⑷ '-(e)', in which the second reaction gas CDm is sent to the reaction vessel; and (iv) period (e) '-(f)', in which the second reaction gas CDm is purified. After action S7, a program consisting of the above four periods is executed by executing After cycling to form a thin film composed of a single atomic layer, the program cycle is repeated in action S8, that is, The feeding and purification of the first and second reaction gases ABn and CDm are repeated until the film reaches a desired thickness. After the film reaches a desired thickness after action S8, in action S9, by e.g. H2 A reaction gas of NH3 and N2 is sprayed onto the wafer w, and a heat treatment is performed on the wafer w on which a thin film of a desired thickness is formed. The heat treatment is performed to increase the purity of the obtained thin film, that is, to reduce the The content of the obtained impurities. Generally, the higher the temperature of the wafer, the more efficient the heat treatment is when reducing the concentration of impurities in the film to improve the quality of the film. However, the increase of the wafer results in an increase in temperature and damage Wafer. For this reason, heat treatment is performed at a lower temperature while applying magnetic field B to the wafer. In this way, the concentration of impurities in the film can be reduced to increase the quality of the film 16 575912 while reducing Damage to wafers. 'The use of magnetic fields helps reduce the amount of impurities in a thin film and improves the quality of the thin film. As explained above, thermal decomposition can be applied by applying A magnetic field and a magnetic field are applied to a wafer, and the intensity of the magnetic field is changed to adjust the intensity of the energy used to initiate the substitution reaction between the first and second reaction gases. At the same time, a cycle, that is, the period (b) '-(f ) 'Is repeatedly performed a predetermined number of times to form a thin film to a desired thickness of 100 A. The strength of the magnetic field can be adjusted to improve the purity of the thin film in contact with an underlying layer. Let us assume that a single program cycle is repeated About thirty times to form a thin film to a thickness of 100A, if the intensity of the magnetic field applied during five of the thirty cycles is set to be greater than the intensity of the magnetic field applied during the other twenty-five cycles, The purity of the thin film in contact with the underlying layer can be increased. Also, during the deposition of the thin film, it is best to adjust the rate of inert gas flowing into the reaction vessel to be uniform, so that the pressure in the reaction vessel is kept constant. Furthermore, in the thin film deposition method according to the first embodiment of the present invention, the magnetic field generated by the magnetic field generator 60 may rotate the wafer w. However, since no plasma is used in this method, because of the magnetic field, rotation of the magnetic field is not required to prevent unevenness in the density of the plasma. Fig. 8 is a diagram illustrating a reaction container for performing a method of forming a thin film using ALD according to a second embodiment of the present invention. FIG. 9 is a diagram illustrating a reaction of the second reaction gas with the first reaction gas absorbed by a wafer when a second reaction gas is sprayed on the wafer and a magnetic field and an electric power are applied to the wafer at the same time. FIG. 10 is a flowchart illustrating a method for forming a thin film 17 575912 using ALD, which is performed by the reaction container of FIG. 9. FIG. 11 is a diagram illustrating a wafer on which the entire horizontal magnetic field rotates. Here, the same elements as those in FIGS. 3 to 6 will be designated by the same reference numerals, and the description thereof will not be repeated. According to the second embodiment, the reaction vessel shown in FIG. 8 is different from that of FIG. 3 because the plasma is further applied to a wafer during at least one of the feeding of the first reaction gas and the feeding of the second reaction gas. formed on w. Here, for convenience, it is assumed that the plasma is formed during the feeding of the second reaction gas. In order to form the plasma, first, an electrical energy is applied between a wafer block 30 and a sprinkler head 50 to form between them. Plasma P. That is, the electric energy is used to obtain the plasma P, and the plasma is useful when it is difficult to obtain a high-purity film even though thermal decomposition energy and a magnetic field are used. Plasma P initiates a substitution reaction between the first and second reactive gases. In detail, when the electric energy is generated by a radio frequency (RF) power source 71, passed through an RF matching box 73 and a capacitor 75, and finally added to an RF plate 77 located in the wafer block 30, the wafer area Plasma P is formed between the block 30 and the spray head 50. Because of the magnetic field formed on the wafer w, the plasma is located on the center of the wafer circle w. Thus, at the center of the wafer w, the plasma density will increase. In this case, it is not desirable for the energy of the plasma P to be transferred to the gas lines 51a and 51b through which the first and second reaction gases flow. Therefore, it is important not to cause the plasma to flow through the gas lines 51a and 51b. For this reason, the sprinkler head 50 is preferably composed of a first sprinkler plate which contacts a top plate 40 and is made of an insulating material such as quartz, and a second sprinkler which is grounded and made of a metal such as aluminum 18 575912. Board. The exterior of the spray head 50 is made of quartz, ceramic, or the like. In this way, the spray head 50 and the wall of the reaction container can be electrically insulated, and further, a plasma cloud can be formed on the wafer w without being adjacent to the gas lines 51a and 51b. The film deposition method using the reaction vessel of FIG. 8 is almost the same as when the reaction vessel of FIG. 3 is used, except that during the film deposition, the plasma P is generated and eliminated when the first and / or second reaction gas is fed in and purified . The generation and elimination of the plasma P occur when at least one of the two reaction gases is supplied to the reaction vessel. In detail, according to the second embodiment, the plasma P is formed during a period (c) ''-(d) '', that is, when the first reaction gas (S5 ') is purified, or is just fed into the second reaction After the gas (S6 '). In addition, the plasma P is eliminated during the purification of the second reaction gas (S7 '), that is, a period (e)' '-(f)' '. The reason why the plasma P is formed just before and after the second reaction gas is fed in is to accelerate the reaction of the first reaction gas on the wafer w as much as possible when forming the thin film. The pulse of the plasma P is applied until the film formation is completed. Generally, hydrogen (H2) is used as the second reaction gas, and is sprayed onto the wafer w in synchronization with the plasma P. In this case, the first reaction gas may be a metal organic compound. When the metal organic compound is sprayed on the wafer w, the formation of the plasma P is suppressed to prevent the metal organic compound from being decomposed by the plasma P. In this way, generation of particles or formation of a low-quality film is possible. In order to uniformly form the plasma P on the wafer w, the magnetic field must be distributed across the wafer w only in one direction. In addition, the pressure of the program must be maintained at a predetermined level to uniformly form a thin film to a desired thickness of 19 575912 degrees, uniformly hold the characteristics of the thin film, and stabilize the formed plasma P, -Handling conditions such as program temperature. Therefore, the flow rate of the inert gas must always be fixed. As in the method according to the first embodiment, a thin film is deposited to a desired thickness, and then, a magnetic field can be applied to the wafer by spraying a mixture of an inert gas and a related reaction gas onto the wafer w w to further perform heat treatment. When the plasma P is formed on the wafer w, there is a high possibility that many ionized gas molecules and electron clouds are formed around the plasma P. If the plasma cloud P is formed thick and uniform on the wafer w, it is possible to easily and uniformly form a thin film. The application of the magnetic field results in an increase in the density of the plasma cloud P. When the magnetic field is applied across the wafer w, a force ExB, that is, a Lawrence force is transferred to the ions, and the ions make a cycloidal motion, as shown in FIG. 9, thereby increasing the density of the plasma cloud. An increase in the density of the plasma cloud may increase the magnetic collision between the reactive gas molecules and the wafer w, and thus increase the density of the formed thin film. At the same time, the Lawrence force caused an imbalance in the density of the plasma P. More specifically, by introducing the trochoidal motion of the ions, the Lawrence force not only increases the density of the plasma P, but also causes many electrons and magnetic field lines in the plasma cloud to drift at right angles. This electron drift motion makes the density of electrons present on the wafer w uneven. That is, the density of the plasma P formed on the wafer w is made uneven, and as a result, a thin film is formed unevenly. In order to solve this problem, the magnet 63 is appropriately disposed on a rotating frame 61 to uniformly distribute the horizontal magnetic field B on one side of the entire wafer w, as shown in FIG. 4. In addition, a rotation driving unit 65 is used to rotate the rotation 20 575912 frame 61 to rotate the horizontal magnetic field] b to prevent electrons from drifting in a specific direction. In this manner, all the magnets 63 are rotated, and the horizontal magnetic field b is gradually rotated in one direction, as shown in FIG. 11. According to the second embodiment of the present invention ', to complete the thin film deposition method, the rotation of the horizontal magnetic field B is unnecessary. FIG. 12 is a pattern illustrating a reaction container for performing a method of forming a thin film using ALD according to a third embodiment of the present invention. FIG. 13 is a diagram illustrating a method of forming a thin film using ALD, which is performed by the reaction container of FIG. The same elements as in Figs. 3 to 11 will be designated by the same reference numerals, and their description will not be repeated. According to a third embodiment, the reaction container is a flow type container including a wafer block 130 on which a wafer w is placed;-spraying a first reaction gas and a second from the side of the wafer w A gas separator 150 for the reaction gas; a discharge device for discharging the gas out of the reaction container; and a magnetic field generator 160 that applies a magnetic field to the entire wafer block 130. The reaction container according to the third embodiment is different from the first and second embodiments in that the first and second reaction gas systems are sprayed from the side of the wafer w, and an electromagnetic or permanent magnet forming a horizontal magnetic field B is mounted on the Reaction container. Although the magnetic field generator 160 is mounted on the reaction container, the results of the magnetic field generator 160 are substantially the same as those in the first and second embodiments. Also, the horizontal magnetic field B is uniformly distributed over the entire wafer w, and is rotated in one direction using the magnetic field generator 160, as in the first and second embodiments. The electromagnetic structure having a wound wire coil and the configuration of a permanent magnet are widely known in the field of plasma vapor deposition (PVD), and therefore, detailed descriptions thereof will be omitted here. 21 575912 The method for forming a film using a reaction container according to the third embodiment is substantially the same as that in the first and second embodiments. That is, according to the present invention, a plasma is applied to the wafer W to excite a substitution reaction between the first and second reaction gases. Also, if a single program cycle is repeatedly performed about thirty times to form a thin film to a thickness of 100A, if the intensity of the magnetic field applied during five of the thirty cycles is set to be greater than that of the other twenty The intensity of the magnetic field added during the five cycles can also increase the purity of the film contacting the underlying layer. At the same time, a magnetic field B is horizontally formed over the entire wafer w. The rotation of the magnetic field generator 160 on the reaction container will rotate the magnetic field B of the entire wafer w. Preferably, during the deposition of the thin film, the flow rate of the inert gas into the reaction vessel is kept uniform to maintain the pressure of the reaction vessel at a predetermined level. Furthermore, as in the first and second embodiments, after forming the thin film to a desired thickness, a mixture of an inert gas and a related reaction gas is sprayed onto the wafer w while straddling the wafer. W applies a magnetic field to further perform heat treatment on the film. During heat treatment, N2, NH3 or N2 can be used as a reaction gas. While the present invention has been specifically shown and described with reference to preferred embodiments thereof, those skilled in the art will appreciate that many different changes in form and detail can be made therein without violating the attached application The spirit and scope of the present invention is defined by the patent scope. As described above, in the method for forming a thin film using ALD according to one of the present inventions, the method of applying a magnetic field and / or a plasma is simultaneously applied to a wafer. Therefore, it is feasible to rapidly form a high-purity thin film having excellent electrical and step coverage characteristics at a temperature lower than that using CVD. [Brief description of the drawings] (1) Schematic part The above and other viewpoints and advantages of the present invention will become more apparent by describing the preferred embodiments thereof in more detail and referring to the attached drawings, where: FIG. 1 is a diagram illustrating a conventional method for forming a thin film using atomic layer deposition (ALD); FIG. 2A is a diagram illustrating a reaction pattern of a first reaction gas and a wafer when a first reaction gas is fed; FIG. 2B is A diagram illustrating the purification of the first reaction gas; FIG. 2C is a diagram illustrating the reaction of the first reaction gas and the second reaction gas absorbed by the wafer when the second reaction gas is fed; FIG. 2D is an illustration A pattern for purifying other gases when forming an atomic layer constituting a thin film; FIG. 3 is a structural pattern illustrating a reaction container used when a method for forming a thin film using ALD is performed according to an embodiment of the present invention; FIG. 4 illustrates FIG. 5 is a diagram illustrating a magnetic field generator and a wafer block included in the reaction container of FIG. 3; FIG. 5 is a diagram illustrating a method of forming a thin film using ALD performed by the reaction container of FIG. 3; 23 575912 FIG. 6 is a It is shown that when the second reaction gas is sprayed on the wafer while the magnetic field is applied to the wafer, the reaction pattern of the first reaction gas and the second reaction gas absorbed by the wafer is shown in FIG. 7. A flowchart of a method for forming a thin film is performed by the reaction container of FIG. 3, as shown in FIG. 6; FIG. 8 is a flowchart illustrating a method for forming a thin film using ALD according to another embodiment of the present invention. Figure of reaction vessel; Figure 9 is a diagram illustrating the reaction between the first reaction gas and the second reaction gas absorbed by the wafer when the second reaction gas is sprayed on the wafer while the magnetic field and the plasma are applied to the wafer. Figures; Figure 10 is a flowchart illustrating a method for forming a thin film using ALD; the method is performed by the reaction container of Figure 9; Figure 11 is a graphic illustrating a magnetic field rotating horizontally across the wafer; Figure 12 is A diagram illustrating a reaction container pattern for performing a method of forming a thin film using ALD according to a third embodiment of the present invention; and FIG. 13 is a pattern illustrating a method of forming a thin film using ALD, which is illustrated in FIG. 12 Reaction vessel to be implemented. (II) Symbols of components 20 reaction block 21 transfer hole 10 transfer module 30 wafer block 40 top plate 50 spray head 24 575912 51 first spray hole · 51a & 51b gas line 52 second spray hole 60 magnetic field generator 61 rotation frame 63 magnet 65 rotation drive unit 71 RF power source 0 73 RF matching box 75 capacitor 77RF plate 130 wafer block 150 gas separator 160 magnetic field generator 25