JPH1135798A - Epoxy resin composition for sealing semiconductor, and semiconductor device made by using the same - Google Patents
Epoxy resin composition for sealing semiconductor, and semiconductor device made by using the sameInfo
- Publication number
- JPH1135798A JPH1135798A JP19528797A JP19528797A JPH1135798A JP H1135798 A JPH1135798 A JP H1135798A JP 19528797 A JP19528797 A JP 19528797A JP 19528797 A JP19528797 A JP 19528797A JP H1135798 A JPH1135798 A JP H1135798A
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- Prior art keywords
- epoxy resin
- resin composition
- semiconductor encapsulation
- formula
- encapsulation according
- Prior art date
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- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、難燃性、成形性、
信頼性に優れた半導体封止用エポキシ樹脂組成物及びそ
れを用いた半導体装置に関する。The present invention relates to flame retardancy, moldability,
The present invention relates to an epoxy resin composition for semiconductor encapsulation having excellent reliability and a semiconductor device using the same.
【０００２】[0002]
【従来の技術】半導体素子の封止は、生産性、コスト等
の面から樹脂封止が主流となっている。この封止用樹脂
は、電気的特性、コスト、作業性等に優れるエポキシ樹
脂組成物が主に用いられている。しかし、エポキシ樹脂
は、難燃性が不充分なので通常臭素化エポキシ樹脂を添
加して難燃性を向上させている。また、臭素系難燃剤と
相乗効果のあるアンチモン化合物（三酸化アンチモン、
五酸化アンチモン等）を併用している。近年環境保護の
観点から、燃焼時にダイオキシンの生成が疑われる臭素
系難燃剤、及び発癌性の可能性が指摘されているアンチ
モン化合物に対する使用規制の要求が強まりつつある。2. Description of the Related Art Resin encapsulation is mainly used for encapsulating semiconductor devices in terms of productivity and cost. As this sealing resin, an epoxy resin composition excellent in electrical characteristics, cost, workability and the like is mainly used. However, since epoxy resins have insufficient flame retardancy, brominated epoxy resins are usually added to improve flame retardancy. In addition, antimony compounds that have a synergistic effect with brominated flame retardants (antimony trioxide,
Antimony pentoxide). In recent years, from the viewpoint of environmental protection, the use of brominated flame retardants suspected of producing dioxins during combustion and antimony compounds, which have been pointed out as having carcinogenic potential, have been increasingly demanded.
【０００３】この要求に対し、種々の代替難燃剤が検討
されてきた。例えば、水酸化アルミニウム、水酸化マグ
ネシウム等の金属水和物は、充分な難燃性を発揮させる
ためには多量に添加せねばならず、樹脂組成物の硬化
性、強度等の劣化を招いてしまう。また、燐酸エステル
系難燃剤（窒素との併用も含む）も種々の製品が提案さ
れているが、成形性、信頼性において半導体封止用途の
要求に堪えるものはない。また、Ｂｒ化合物、アンチモ
ン化合物の割合を、それぞれ全体の０〜０．３重量％と
したエポキシ樹脂組成物が提案されている（特開平７−
８２３４３号公報）。しかし、Ｂｒ化合物、アンチモン
化合物の含有量が０．０１ｗｔ％以上では、環境問題の
点から不充分であり、０．０１ｗｔ％未満の場合には特
に硬化剤の当量が、少なくとも１４０以上なければ必要
とする難燃性が得られない。[0003] In response to this demand, various alternative flame retardants have been studied. For example, metal hydrates such as aluminum hydroxide and magnesium hydroxide must be added in large amounts in order to exhibit sufficient flame retardancy, resulting in deterioration of the curability, strength, etc. of the resin composition. I will. Various products have also been proposed for a phosphoric ester-based flame retardant (including the combined use with nitrogen), but none of them can meet the demands for semiconductor encapsulation in terms of moldability and reliability. An epoxy resin composition has been proposed in which the proportions of the Br compound and the antimony compound are each set to 0 to 0.3% by weight of the whole (Japanese Patent Application Laid-Open No. 7-1995).
No. 82343). However, when the content of the Br compound and the antimony compound is 0.01 wt% or more, it is insufficient from the viewpoint of environmental problems. When the content is less than 0.01 wt%, it is particularly necessary that the equivalent of the curing agent is at least 140 or more. Flame retardancy cannot be obtained.
【０００４】[0004]
【発明が解決しようとする課題】本発明は、臭素系難燃
剤、アンチモン化合物の含有量が極微量であるか、ある
いは全く含有しない、成形性、信頼性、難燃性に優れた
半導体封止用エポキシ樹脂組成物及びそれを用いた半導
体装置を提供することを目的とする。DISCLOSURE OF THE INVENTION The present invention relates to a semiconductor encapsulation which is excellent in moldability, reliability and flame retardancy, and has a very small or no bromine-based flame retardant or antimony compound content. It is an object to provide an epoxy resin composition for use and a semiconductor device using the same.
【０００５】[0005]
【課題を解決するための手段】すなわち本発明は、エポ
キシ樹脂、フェノール硬化剤及び無機充填材を主成分と
する封止材において、１５０℃におけるＩＣＩ粘度が
１．０ｐｏｉｓｅ以下のエポキシ樹脂と水酸基当量が１
４０以上である硬化剤、及び８７〜９５ｗｔ％の無機充
填材を組み合わせることにより、上記の課題を達成する
半導体封止用エポキシ樹脂組成物が得られることを見出
し、本発明に到達した。That is, the present invention relates to a sealing material containing an epoxy resin, a phenol curing agent, and an inorganic filler as main components, wherein the epoxy resin having an ICI viscosity at 150 ° C. of 1.0 poise or less and a hydroxyl equivalent are used. Is 1
The present inventors have found that an epoxy resin composition for semiconductor encapsulation that achieves the above-mentioned objects can be obtained by combining a curing agent of 40 or more and an inorganic filler of 87 to 95 wt%, and arrived at the present invention.
【０００６】本発明で用いられるエポキシ樹脂として
は、１５０℃でのＩＣＩ粘度が１．０ｐｏｉｓｅ以下で
あれば他に特に制限はないが、特に一般式（１）または
（２）で表されるエポキシ樹脂が好適に用いられる。粘
度が１．０ｐｏｉｓｅより高いと必要とする流動性が得
られない。[0006] The epoxy resin used in the present invention is not particularly limited as long as the ICI viscosity at 150 ° C is 1.0 poise or less, but the epoxy resin represented by the general formula (1) or (2) is particularly preferred. Resins are preferably used. If the viscosity is higher than 1.0 poise, the required fluidity cannot be obtained.
【化８】 硬化剤としては、水酸基当量が１４０以上であれば他に
特に制限はないが、好ましくは水酸基当量１７０以上、
特に好ましくは１９０以上のものが好適に用いられる。
特に、一般式（３）または（４）または（５）または
（６）で表される硬化剤が好適に用いられる。Embedded image The curing agent is not particularly limited as long as the hydroxyl equivalent is 140 or more, but preferably, the hydroxyl equivalent is 170 or more,
Particularly preferably, those having 190 or more are suitably used.
In particular, a curing agent represented by the general formula (3) or (4) or (5) or (6) is preferably used.
【化９】 Embedded image
【０００７】硬化促進剤としては、特に制限はないが、
テトラフェニルホスホニウム−テトラフェニルボレー
ト、トリフェニルホスフィン、トリフェニルホスフィン
とベンゾキノンの付加物、１，８−ジアザ−ビシクロ
（５，４，０）−ウンデセン−７，２−フェニル−４メ
チル−イミダゾール、トリフェニルホスホニウム−トリ
フェニルボラン等を単独又は併用して用いることが出来
るが、特にトリフェニルホスフィンとベンゾキノンの付
加物（一般式（７））が好適である。[0007] The curing accelerator is not particularly limited,
Tetraphenylphosphonium-tetraphenylborate, triphenylphosphine, an adduct of triphenylphosphine and benzoquinone, 1,8-diaza-bicyclo (5,4,0) -undecene-7,2-phenyl-4methyl-imidazole, triphenylphosphine Although phenylphosphonium-triphenylborane or the like can be used alone or in combination, an adduct of triphenylphosphine and benzoquinone (general formula (7)) is particularly preferable.
【化１０】 Embedded image
【０００８】カップリング剤は、特に制限はないが、エ
ポキシシラン、アニリノシランが好適に用いられる。離
型剤は、特に制限はないが、高級脂肪酸、例えばカルナ
バワックス等とポリエチレン系ワックスを単独又は併用
して用いることが出来るが、特に併用が好適である。無
機充填材は、８７〜９５ｗｔ％配合され、充填材形状は
５０％以上球状であることが好ましく、特に制限はない
が、溶融シリカ、結晶シリカ、アルミナ等を単独及び併
用して用いることが出来る。特に、球状溶融シリカが好
適である。充填材量が８７ｗｔ％未満では、難燃性が低
下するし、９５ｗｔ％以上では、流動性に問題が出易
い。特に９０〜９５％の範囲が好適である。[0008] The coupling agent is not particularly limited, but epoxysilane and anilinosilane are preferably used. The release agent is not particularly limited, but a higher fatty acid such as carnauba wax or the like and a polyethylene wax can be used alone or in combination, and the combination is particularly preferable. The inorganic filler is blended in an amount of 87 to 95 wt%, and the shape of the filler is preferably 50% or more spherical. There is no particular limitation, but fused silica, crystalline silica, alumina and the like can be used alone or in combination. . In particular, spherical fused silica is preferred. When the amount of the filler is less than 87 wt%, the flame retardancy is reduced, and when the amount is 95 wt% or more, a problem tends to occur in the fluidity. Particularly, the range of 90 to 95% is preferable.
【０００９】樹脂組成物中の、臭素及びアンチモン化合
物含有量は、それぞれ０．０１ｗｔ％以下であることが
必要である。特に０．００１ｗｔ％以下であることが好
ましい。必要に応じて低発煙化剤である酸化タングステ
ン、酸化モリブデンを用いてもよい。好ましくは、三酸
化タングステンまたは三酸化モリブデンを用いる。樹脂
組成物中の酸化タングステン、酸化モリブデンの含有量
としては、０．１〜１０．０ｗｔ％が好ましい。０．１
ｗｔ％よりも少なければ効果が得られないし、１０．０
ｗｔ％よりも多ければ成形性に問題が出易い。特に０．
４〜５．０ｗｔ％の範囲が好適に用いられる。[0009] The content of bromine and antimony compound in the resin composition must each be 0.01 wt% or less. In particular, the content is preferably 0.001% by weight or less. Tungsten oxide and molybdenum oxide which are low smoke generating agents may be used as necessary. Preferably, tungsten trioxide or molybdenum trioxide is used. The content of tungsten oxide and molybdenum oxide in the resin composition is preferably 0.1 to 10.0 wt%. 0.1
No effect is obtained if the amount is less than 0.1% by weight.
If it is more than wt%, a problem tends to occur in the moldability. Especially 0.
The range of 4 to 5.0 wt% is suitably used.
【００１０】窒素含有化合物を添加することで、更に難
燃性レベルを向上させることができる。特にメラミン
（Ｈ6 Ｃ3 Ｎ6 ）が、成形性に対する影響も少なく好適
に用いられる。樹脂組成物中のメラミン含有量として
は、０．０１〜５．０ｗｔ％が好ましい。０．０１ｗｔ
ｗ％よりも少なければ効果が得られないし、５．０ｗｔ
％よりも多ければ成形性に問題が出易い。特に０．１〜
２．０ｗｔ％の範囲が好適に用いられる。その他の添加
物として、着色剤（カーボンブラック等）、改質剤（シ
リコーン、シリコーンゴム等）、イオントラッパー（ハ
イドロタルサイト、他）を用いることが出来る。By adding a nitrogen-containing compound, the flame retardancy level can be further improved. In particular, melamine (H 6 C 3 N 6 ) is preferably used because it has little influence on moldability. The melamine content in the resin composition is preferably from 0.01 to 5.0% by weight. 0.01wt
No effect is obtained if the amount is less than 5.0% by weight.
%, It tends to cause problems in moldability. Especially 0.1 ~
A range of 2.0 wt% is preferably used. As other additives, a colorant (such as carbon black), a modifier (such as silicone and silicone rubber), and an ion trapper (such as hydrotalcite) can be used.
【００１１】以上のような原材料を用いて成形材料を作
製する一般的な方法としては、所定の配合量の原材料混
合物をミキサー等によって充分混合した後、熱ロール、
押出機等によって混練し、冷却、粉砕、することによっ
て成形材料を得ることが出来る。本発明で得られるエポ
キシ樹脂組成物を用いて電子部品を封止する方法として
は、低圧トランスファ成形法が最も一般的であるが、イ
ンジェクション成形、圧縮成形、注型等の方法によって
も可能である。上記した手段を用いて製造したエポキシ
樹脂組成物は、臭素系難燃剤、アンチモン化合物を含有
しないため環境に優しく、且つ成形性、信頼性に優れて
おりトランジスタ、ＩＣ、ＬＳＩ等の封止に好適に用い
ることができる。As a general method for producing a molding material using the above-mentioned raw materials, a raw material mixture having a predetermined compounding amount is sufficiently mixed by a mixer or the like, and then heated rolls are used.
By kneading with an extruder or the like, cooling and pulverizing, a molding material can be obtained. As a method of sealing an electronic component using the epoxy resin composition obtained by the present invention, a low-pressure transfer molding method is the most common, but injection molding, compression molding, casting, and other methods are also possible. . The epoxy resin composition manufactured using the above-described means is environmentally friendly because it does not contain a brominated flame retardant or an antimony compound, and has excellent moldability and reliability, and is suitable for sealing of transistors, ICs, LSIs, and the like. Can be used.
【００１２】[0012]
【実施例】以下、本発明を実施例に基づいて詳細に説明
するが、本発明はこれに限定されるものではない。 実施例１〜５、比較例１〜５ まず、表１〜２に示す各種の素材を用い、実施例１〜５
及び比較例１〜５は各素材を予備混合（ドライブレン
ド）した後、二軸ロール（ロール表面温度約８０℃）で
１０分間混練し、冷却粉砕して製造した。The present invention will be described below in detail with reference to examples, but the present invention is not limited to these examples. Examples 1 to 5 and Comparative Examples 1 to 5 First, various materials shown in Tables 1 and 2 were used.
Each of Comparative Examples 1 to 5 was manufactured by premixing (dry blending) each material, kneading with a biaxial roll (roll surface temperature: about 80 ° C.) for 10 minutes, and cooling and pulverizing.
【００１３】[0013]
【表１】 [Table 1]
【００１４】[0014]
【表２】 [Table 2]
【００１５】この封止材を用い、トランスファー成形機
を用い、金型温度１８０℃、成形圧力７０ｋｇｆ／ｃｍ
2 、硬化時間９０秒の条件で各試験を行った。スパイラ
ルフローは、ＥＭＭＩ１−６６により測定した。熱時硬
度はショア硬度計にて測定した。また、この封止材を用
いて、半導体素子をトランスファー成形機で同様の条件
で成形し、ポストキュア（１７５℃／５ｈ）後、高温放
置性と半田耐熱性を評価した。高温放置性に用いた半導
体装置はＳＯＰ−２８ピンであり、１７５℃に設定した
恒温槽中に所定の時間放置した後、ファーストボンディ
ング側の金線とアルミパッドの断線の有無を評価した。
半田耐熱性に用いた半導体装置は、ＱＦＰ８０ピンの樹
脂封止型半導体装置（外形寸法２０×１４×２．０ｍ
ｍ）であり、リードフレームは４２アロイ材（加工な
し）で８×１０ｍｍのチップサイズを有するものであ
る。このようにして得られた樹脂封止用半導体装置につ
いて、半田耐熱性を以下に示す方法で測定した。１２５
℃／２４ｈベーキング後、８５℃／８５％ＲＨで所定の
時間吸湿した後、２４０℃／１０ｓｅｃの処理を行った
時の樹脂封止型半導体装置のクラック発生率を求めた。
上記の試験結果をまとめて表３に示す。Using this sealing material, using a transfer molding machine, a mold temperature of 180 ° C. and a molding pressure of 70 kgf / cm.
2. Each test was conducted under the condition of a curing time of 90 seconds. Spiral flow was measured by EMMI1-66. Hot hardness was measured by a Shore hardness tester. Further, using this sealing material, a semiconductor element was molded by a transfer molding machine under the same conditions, and after post-curing (175 ° C./5 h), high-temperature storage properties and solder heat resistance were evaluated. The semiconductor device used for high-temperature storage was an SOP-28 pin. After leaving the semiconductor device in a thermostat set at 175 ° C. for a predetermined time, the presence or absence of disconnection between the gold wire on the first bonding side and the aluminum pad was evaluated.
The semiconductor device used for solder heat resistance is a QFP 80-pin resin-sealed semiconductor device (external dimensions 20 × 14 × 2.0 m
m), and the lead frame is made of 42 alloy material (no processing) and has a chip size of 8 × 10 mm. With respect to the semiconductor device for resin sealing obtained in this way, the solder heat resistance was measured by the method described below. 125
After baking at a temperature of 85 ° C./85% RH for a predetermined period of time after baking at 24 ° C. for 24 hours, a crack generation rate of the resin-encapsulated semiconductor device when a process at 240 ° C./10 sec was performed was determined.
Table 3 summarizes the above test results.
【００１６】[0016]
【表３】 [Table 3]
【００１７】[0017]
【表４】 [Table 4]
【００１８】[0018]
【発明の効果】本発明によれば、エポキシ樹脂、フェノ
ール硬化剤及び無機充填材を主成分とする半導体素子封
止用エポキシ樹脂組成物において、臭素系難燃剤、アン
チモン化合物を含有することなく難燃性ＵＬ９４Ｖ−０
を満足し、信頼性、成形性に優れ、且つ環境に対する影
響が極めて小さい成形材料を得ることができる。また、
この成形材料を用いて半導体素子を封止することで、信
頼性、難燃性に優れた半導体装置を提供することができ
る。According to the present invention, an epoxy resin composition for encapsulating a semiconductor element containing an epoxy resin, a phenol curing agent and an inorganic filler as main components does not contain a brominated flame retardant and an antimony compound. Flammability UL94V-0
And a molding material excellent in reliability and moldability and having a very small influence on the environment can be obtained. Also,
By sealing a semiconductor element with this molding material, a semiconductor device having excellent reliability and flame retardancy can be provided.
Claims (13)
ｏｉｓｅ以下であるエポキシ樹脂、（Ｂ）水酸基当量が
１４０以上である硬化剤、（Ｃ）硬化促進剤、および
（Ｄ）無機充填材を必須成分とし、充填材量が８７〜９
５ｗｔ％であって、且つ臭素及びアンチモン化合物の含
有量がそれぞれ組成物全体に対して、０．０１ｗｔ％以
下であることを特徴とする半導体封止用エポキシ樹脂組
成物。(A) An ICI viscosity at 150 ° C. of 1 p
The epoxy resin having a weight of not more than 0ise, (B) a curing agent having a hydroxyl equivalent of 140 or more, (C) a curing accelerator, and (D) an inorganic filler are essential components.
An epoxy resin composition for semiconductor encapsulation, wherein the content is 5 wt%, and the content of each of the bromine and the antimony compound is 0.01 wt% or less based on the whole composition.
表わされるビフェニル型エポキシ樹脂である請求項１記
載の半導体封止用エポキシ樹脂組成物。 【化１】 式中ｍは０〜６の整数。ｎは２８以下の整数。Ｒ１〜Ｒ
ｎは水素原子または炭素数１０以下のアルキル基を示
し、同一であっても異なってもよい。2. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the epoxy resin (A) is a biphenyl type epoxy resin represented by the general formula (1). Embedded image In the formula, m is an integer of 0 to 6. n is an integer of 28 or less. R1-R
n represents a hydrogen atom or an alkyl group having 10 or less carbon atoms, and may be the same or different.
表わされるエポキシ化合物である請求項１記載の半導体
封止用エポキシ樹脂組成物。 【化２】 3. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the epoxy resin (A) is an epoxy compound represented by the general formula (2). Embedded image
れるアラルキル型フェノ−ル樹脂である請求項１又は２
又は３記載の半導体封止用エポキシ樹脂組成物。 【化３】 式中、ｎは０以上の整数。4. The curing agent of (B) is an aralkyl phenol resin represented by the general formula (3).
Or the epoxy resin composition for semiconductor encapsulation according to 3. Embedded image In the formula, n is an integer of 0 or more.
れるフェノ−ル樹脂である請求項１又は２又は３記載の
半導体封止用エポキシ樹脂組成物。 【化４】 式中、ｎ＝０〜６の整数。ｍは３６以下の整数。Ｒ１〜
Ｒｍは水素原子、または炭素数１０以下のアルキル基を
示し、同一であっても異なってもよい。5. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the curing agent (B) is a phenol resin represented by the general formula (4). Embedded image In the formula, n = 0 to 6 is an integer. m is an integer of 36 or less. R1
Rm represents a hydrogen atom or an alkyl group having 10 or less carbon atoms, and may be the same or different.
れるフェノ−ル樹脂である請求項１又は２又は３記載の
半導体封止用エポキシ樹脂組成物。 【化５】 式中、ｎは１以上の整数。6. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the curing agent (B) is a phenol resin represented by the general formula (5). Embedded image In the formula, n is an integer of 1 or more.
れるフェノ−ル樹脂である請求項１又は２又は３記載の
半導体封止用エポキシ樹脂組成物。 【化６】 式中、ｍ、ｎは１以上の整数。7. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the curing agent (B) is a phenol resin represented by the general formula (6). Embedded image In the formula, m and n are integers of 1 or more.
わされるトリフェニルホスフィンとベンゾキノンの付加
物である請求項１乃至７のいずれかに記載の半導体封止
用エポキシ樹脂組成物。 【化７】 8. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the curing accelerator (C) is an adduct of triphenylphosphine and benzoquinone represented by the general formula (7). Stuff. Embedded image
９５ｗｔ％である請求項１乃至８のいずれかに記載の半
導体封止用エポキシ樹脂組成物。9. The amount of the inorganic filler of (D) is from 90 to 90% of the total composition.
The epoxy resin composition for semiconductor encapsulation according to any one of claims 1 to 8, which is 95 wt%.
当量比で１．０〜１．４である請求項１乃至９のいずれ
かに記載の半導体封止用エポキシ樹脂組成物。10. The amount of the curing agent is based on the epoxy resin.
The epoxy resin composition for semiconductor encapsulation according to any one of claims 1 to 9, wherein the equivalent ratio is 1.0 to 1.4.
を全組成物に対し０．１〜１０．０ｗｔ％添加した請求
項１乃至１０のいずれかに記載の半導体封止用エポキシ
樹脂組成物。11. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein 0.1 to 10.0 wt% of molybdenum oxide or tungsten oxide is added to the whole composition.
５．０ｗｔ％添加した請求項１乃至１１のいずれかに記
載の半導体封止用エポキシ樹脂組成物。12. Melamine is used in an amount of 0.01 to 0.01% based on the total composition.
The epoxy resin composition for semiconductor encapsulation according to any one of claims 1 to 11, wherein 5.0 wt% is added.
導体封止用エポキシ樹脂組成物を用いて、半導体素子を
封止してなる樹脂封止型半導体装置。13. A resin-encapsulated semiconductor device comprising a semiconductor element encapsulated by using the epoxy resin composition for encapsulating a semiconductor according to claim 1.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19528797A JP4312275B2 (en) | 1997-07-22 | 1997-07-22 | Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP19528797A JP4312275B2 (en) | 1997-07-22 | 1997-07-22 | Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2006356444A Division JP2007131861A (en) | 2006-12-28 | 2006-12-28 | Epoxy resin composition for sealing semiconductor and semiconductor device using the same |
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| Publication Number | Publication Date |
|---|---|
| JPH1135798A true JPH1135798A (en) | 1999-02-09 |
| JP4312275B2 JP4312275B2 (en) | 2009-08-12 |
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ID=16338653
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP19528797A Expired - Fee Related JP4312275B2 (en) | 1997-07-22 | 1997-07-22 | Epoxy resin composition for semiconductor encapsulation and semiconductor device using the same |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001279057A (en) * | 1999-03-09 | 2001-10-10 | Hitachi Chem Co Ltd | Sealing material composition and electronic part device |
| JP2001316565A (en) * | 2000-05-10 | 2001-11-16 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP2001335679A (en) * | 2000-05-29 | 2001-12-04 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semi-conductor device |
| JP2002003701A (en) * | 2000-06-20 | 2002-01-09 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007131861A (en) * | 2006-12-28 | 2007-05-31 | Hitachi Chem Co Ltd | Epoxy resin composition for sealing semiconductor and semiconductor device using the same |
-
1997
- 1997-07-22 JP JP19528797A patent/JP4312275B2/en not_active Expired - Fee Related
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2001279057A (en) * | 1999-03-09 | 2001-10-10 | Hitachi Chem Co Ltd | Sealing material composition and electronic part device |
| JP2001316565A (en) * | 2000-05-10 | 2001-11-16 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP2001335679A (en) * | 2000-05-29 | 2001-12-04 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semi-conductor device |
| JP2002003701A (en) * | 2000-06-20 | 2002-01-09 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP4312275B2 (en) | 2009-08-12 |
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