JPH10287797A - Epoxy resin composition for semiconductor sealing and semiconductor device sealed therewith - Google Patents

Abstract

PROBLEM TO BE SOLVED: To obtain a composition excellent in moldability, reliability and flame retardancy by using an epoxy resin, a phenolic curing agent, molybdenum oxide and an inorganic filler as the essential components and specifying the amount of the inorganic filler used. SOLUTION: The inorganic filler is used in an amount of 85-95 wt.%. The epoxy resin is particularly desirably a biphenyl-derived one. The curing agent is particularly desirably of an aralkyl type. The cure accelerator use is particularly desirably an adduct of triphenylphosphine with benzoquinone. The inorganic filler is particularly desirably spherical fused silica. The molybdenum oxide is desirably molybdenum trioxide. The molybdenum oxide content of the composition is desirably 0.1-10.0%. This composition is freed from a bromine-containing flame retardant and an antimony compound, so that it is friendly to the environment and can be desirably used for sealing transistors, ICs, LSIs, etc.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

The present invention relates to flame retardancy, moldability,
The present invention relates to a sealing material excellent in reliability and a semiconductor device using the same.

[0002]

2. Description of the Related Art Resin encapsulation is mainly used for encapsulating semiconductor devices in terms of productivity and cost. As this sealing resin, an epoxy resin composition excellent in electrical characteristics, cost, workability and the like is mainly used. However, since epoxy resins have insufficient flame retardancy, brominated epoxy resins are usually added to improve flame retardancy. In addition, antimony compounds that have a synergistic effect with brominated flame retardants (antimony trioxide,
Antimony pentoxide). In recent years, from the viewpoint of environmental protection, the use of brominated flame retardants suspected of producing dioxins during combustion and antimony, which has been pointed out as a potential carcinogen, has been increasingly required. To meet this demand, various alternative flame retardants have been studied. For example, metal hydrates such as aluminum hydroxide and magnesium hydroxide must be added in a large amount in order to exhibit sufficient flame retardancy, which causes deterioration of the curability, strength, etc. of the resin composition. . Various products have also been proposed for phosphate ester-based flame retardants (including those used in combination with nitrogen).
The reality is that there is no one that can meet the demands of semiconductor sealing applications in terms of reliability.

[0003]

DISCLOSURE OF THE INVENTION The present invention relates to a bromine-based flame retardant and an antimony compound-free moldability, reliability,
An object of the present invention is to provide an epoxy resin composition for semiconductor encapsulation excellent in flame retardancy and a semiconductor device using the same.

[0004]

That is, the present invention is directed to a semiconductor encapsulating material containing a molybdenum oxide as an essential component as a flame retardant in a sealing material containing an epoxy resin, a phenol curing agent and an inorganic filler as main components. The present invention relates to an epoxy resin composition for use and a semiconductor device using the same. Molybdenum oxide has been known as a smoke suppressant (JP-A-59-182546, JP-T-7-506623).
No.). However, these are auxiliaries for other flame retardants (especially bromine-based flame retardants) or as smoke suppressants, and no examples have been reported in which molybdenum oxide alone achieves UL94V-0. As a result of intensive studies, the present inventors have surprisingly discovered that the epoxy resin composition produced with the above composition achieves UL94V-0 only by adding a small amount of molybdenum oxide as a flame retardant. . Less than,
Details will be described.

[0005]

BEST MODE FOR CARRYING OUT THE INVENTION The epoxy resin used in the present invention is not particularly limited. Orthocresol novolak type, biphenyl type, dicyclo type and the like can be used alone or in combination. Is preferred. The curing agent is not particularly limited, and a phenol novolak type, an aralkyl type, a terpene type or the like can be used alone or in combination, and an aralkyl type is particularly preferable. Although there is no particular limitation on the curing accelerator, tetraphenylphosphonium-tetraphenylborate,
Triphenylphosphine, an adduct of triphenylphosphine and benzoquinone, 1,8-diaza-bicyclo (5,
(4,0) -undecene-7,2-phenyl-4methyl-
Imidazole, triphenylphosphonium-triphenylborane and the like can be used alone or in combination,
Particularly, an adduct of triphenylphosphine and benzoquinone is preferable. The coupling agent is not particularly limited, but epoxy silane is preferably used. The release agent is not particularly limited, but a higher fatty acid such as carnauba wax and a polyethylene wax can be used alone or in combination, but the combination is particularly preferred.

The inorganic filler is blended in an amount of 85 to 95% by weight, and the shape of the filler is not particularly limited as long as it is 50% or more spherical, but fused silica, crystalline silica, alumina and the like can be used alone or in combination. . Particularly, spherical fused silica is preferred. When the amount of the filler is less than 85% by weight, the flame retardancy is lowered, and when the amount is more than 95% by weight, a problem tends to occur in the fluidity. Particularly, the range of 89 to 95% by weight is suitable. Molybdenum oxide is used as the flame retardant. Preferably, molybdenum trioxide is used. The content of molybdenum oxide in the resin composition is preferably from 0.1 to 10.0%. If it is less than 0.1%, the flame retardancy will be insufficient, and if it is more than 10.0%, there will be a problem in formability. In particular, the range of 0.4 to 5.0% is suitably used. As other additives, colorants (such as carbon black), modifiers (such as silicone and silicone rubber), and ion trappers (such as hydrotalcite and antimony-bismuth) can be used. As a general method for producing a molding material using the above-described raw materials, a raw material mixture having a predetermined compounding amount is sufficiently mixed by a mixer or the like, and then kneaded by a hot roll, an extruder, and the like, cooled, and crushed. By doing so, a molding material can be obtained. As a method for sealing an electronic component using the epoxy resin composition obtained in the present invention, a low-pressure transfer molding method is the most common, but injection molding, compression molding, casting, and other methods are also possible. is there. The epoxy resin composition manufactured using the above-described means is environmentally friendly because it does not contain a brominated flame retardant or an antimony compound, and has excellent moldability and reliability, and is suitable for sealing of transistors, ICs, LSIs, and the like. Can be used.

[0007]

The present invention will be described below in detail with reference to examples, but the present invention is not limited to these examples. Examples 1 and 2 Comparative Examples 1 to 5 First, using various materials shown in Table 1, in Examples 1 and 2 and Comparative Examples 1 to 5, each material was premixed (dry blending).
After that, 10 rolls with a biaxial roll (roll surface temperature about 80 ° C)
The mixture was kneaded for 5 minutes, cooled and pulverized to produce the product.

[0008]

[Table 1]

[0009]

[Table 2]

Using this sealing material, using a transfer molding machine, a mold temperature of 180 ° C. and a molding pressure of 70 kgf / cm.
^2. Each test was conducted under the condition of a curing time of 90 seconds. Spiral flow was measured by EMMI1-66. Hot hardness was measured by a Shore hardness tester. Further, using this sealing material, a semiconductor element was molded by a transfer molding machine under the same conditions, and after post-curing (175 ° C./5 h), the moisture resistance and the solder heat resistance were evaluated. The semiconductor device used for the moisture resistance is an SOP-28 pin, which is 85 ° C./85 RH% 72.
Time moisture absorption + 215 ° C / 90 seconds (VPS)
It was left at CT (121 ° C./2 atm) to evaluate the presence or absence of wiring on the chip. The semiconductor device used for solder heat resistance is Q
FP80 pin resin-encapsulated semiconductor device (external dimensions 20 ×
14 × 2.0 mm), and the lead frame is made of 42 alloy material (no processing) and has a chip size of 8 × 10 mm. The solder heat resistance of the resin-encapsulated semiconductor device thus obtained was measured by the following method. 85 ° C / 85% after baking at 125 ° C / 24h
After absorbing moisture for a predetermined period of time at RH, the crack occurrence rate of the resin-encapsulated semiconductor device when a process at 240 ° C./10 sec was performed was determined. Table 3 summarizes the above test results.

[0011]

[Table 3] * 1 Heat resistance: Time required for the disconnection failure rate to reach 50%. * 2 Solder heat resistance: Moisture absorption time until appearance cracks occur.

[0012]

According to the epoxy resin composition for encapsulating a semiconductor element containing an epoxy resin, a phenol curing agent and an inorganic filler as main components, a bromine-based flame retardant can be obtained by blending molybdenum oxide as an essential component as a flame retardant. It is possible to obtain a molding material which satisfies the flame retardancy UL94V-0 without containing an antimony compound, has excellent reliability and moldability, and has an extremely small influence on the environment. By sealing a semiconductor element using this molding material, a semiconductor device having excellent reliability and flame retardancy can be obtained.

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Claims (6)

[Claims] (1) an epoxy resin (B) a curing agent (C) molybdenum oxide (D) an inorganic filler as an essential component;
The content of the inorganic filler component is 85 to the resin composition.
An epoxy resin composition for encapsulating a semiconductor, wherein the content is about 95% by weight. 2. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the content of molybdenum oxide as the component (C) is 0.1 to 10.0% by weight based on the whole resin composition. 3. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the epoxy resin as the component (A) is a biphenyl type epoxy compound. 4. The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the curing agent as the component (B) is a paraxylylene-modified phenol resin. 5. The content of the inorganic filler of component (D) is 89 to 90.
The epoxy resin composition for semiconductor encapsulation according to claim 1, wherein the content is 95% by weight. 6. A resin encapsulation obtained by encapsulating a semiconductor element using the epoxy resin composition for encapsulating a semiconductor according to any one of claims 1, 2, 3, 4 and 5. Type semiconductor device.