KR100497065B1 - Epoxy resin composition for semiconductor encapsulant - Google Patents
Epoxy resin composition for semiconductor encapsulant Download PDFInfo
- Publication number
- KR100497065B1 KR100497065B1 KR10-1999-0032603A KR19990032603A KR100497065B1 KR 100497065 B1 KR100497065 B1 KR 100497065B1 KR 19990032603 A KR19990032603 A KR 19990032603A KR 100497065 B1 KR100497065 B1 KR 100497065B1
- Authority
- KR
- South Korea
- Prior art keywords
- epoxy resin
- resin composition
- curing agent
- polyaromatic
- semiconductor encapsulant
- Prior art date
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- 239000003822 epoxy resin Substances 0.000 title claims abstract description 60
- 229920000647 polyepoxide Polymers 0.000 title claims abstract description 60
- 239000000203 mixture Substances 0.000 title claims abstract description 43
- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 239000008393 encapsulating agent Substances 0.000 title claims abstract description 23
- 239000003795 chemical substances by application Substances 0.000 claims abstract description 59
- 239000007822 coupling agent Substances 0.000 claims abstract description 16
- 239000011256 inorganic filler Substances 0.000 claims abstract description 11
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 11
- 150000002989 phenols Chemical class 0.000 claims abstract description 8
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical compound C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 claims abstract description 5
- 229910000077 silane Inorganic materials 0.000 claims description 4
- -1 amine silane compound Chemical class 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 2
- XAVGNEJDRLVNOO-UHFFFAOYSA-N [P].OC1=CC=CC=C1 Chemical compound [P].OC1=CC=CC=C1 XAVGNEJDRLVNOO-UHFFFAOYSA-N 0.000 claims 1
- 239000003063 flame retardant Substances 0.000 abstract description 27
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 abstract description 22
- 239000011342 resin composition Substances 0.000 abstract description 4
- 238000005979 thermal decomposition reaction Methods 0.000 abstract description 3
- 239000006227 byproduct Substances 0.000 abstract description 2
- 229910052736 halogen Inorganic materials 0.000 description 13
- 150000002367 halogens Chemical class 0.000 description 13
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 12
- 230000000704 physical effect Effects 0.000 description 11
- QWVGKYWNOKOFNN-UHFFFAOYSA-N o-cresol Chemical compound CC1=CC=CC=C1O QWVGKYWNOKOFNN-UHFFFAOYSA-N 0.000 description 10
- RIOQSEWOXXDEQQ-UHFFFAOYSA-N triphenylphosphine Chemical compound C1=CC=CC=C1P(C=1C=CC=CC=1)C1=CC=CC=C1 RIOQSEWOXXDEQQ-UHFFFAOYSA-N 0.000 description 8
- 238000002485 combustion reaction Methods 0.000 description 6
- 230000000052 comparative effect Effects 0.000 description 6
- 238000010521 absorption reaction Methods 0.000 description 5
- 230000007797 corrosion Effects 0.000 description 5
- 238000005260 corrosion Methods 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 238000007789 sealing Methods 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 230000009477 glass transition Effects 0.000 description 4
- 238000002156 mixing Methods 0.000 description 4
- 239000006229 carbon black Substances 0.000 description 3
- 239000003086 colorant Substances 0.000 description 3
- 230000007547 defect Effects 0.000 description 3
- 238000000465 moulding Methods 0.000 description 3
- ZUOUZKKEUPVFJK-UHFFFAOYSA-N phenylbenzene Natural products C1=CC=CC=C1C1=CC=CC=C1 ZUOUZKKEUPVFJK-UHFFFAOYSA-N 0.000 description 3
- 229920005989 resin Polymers 0.000 description 3
- 239000011347 resin Substances 0.000 description 3
- 241000282412 Homo Species 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 150000001412 amines Chemical class 0.000 description 2
- 235000010290 biphenyl Nutrition 0.000 description 2
- 239000004305 biphenyl Substances 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000004132 cross linking Methods 0.000 description 2
- 235000014113 dietary fatty acids Nutrition 0.000 description 2
- 239000006185 dispersion Substances 0.000 description 2
- 239000000194 fatty acid Substances 0.000 description 2
- 229930195729 fatty acid Natural products 0.000 description 2
- 150000004665 fatty acids Chemical class 0.000 description 2
- 239000012467 final product Substances 0.000 description 2
- 239000006260 foam Substances 0.000 description 2
- 239000007789 gas Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000004615 ingredient Substances 0.000 description 2
- 239000006082 mold release agent Substances 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052698 phosphorus Inorganic materials 0.000 description 2
- 239000011574 phosphorus Substances 0.000 description 2
- 150000003018 phosphorus compounds Chemical class 0.000 description 2
- 239000004014 plasticizer Substances 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229920002545 silicone oil Polymers 0.000 description 2
- 238000010998 test method Methods 0.000 description 2
- 239000001993 wax Substances 0.000 description 2
- HGUFODBRKLSHSI-UHFFFAOYSA-N 2,3,7,8-tetrachloro-dibenzo-p-dioxin Chemical compound O1C2=CC(Cl)=C(Cl)C=C2OC2=C1C=C(Cl)C(Cl)=C2 HGUFODBRKLSHSI-UHFFFAOYSA-N 0.000 description 1
- 229910001369 Brass Inorganic materials 0.000 description 1
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- 239000004594 Masterbatch (MB) Substances 0.000 description 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 238000005452 bending Methods 0.000 description 1
- 125000006267 biphenyl group Chemical group 0.000 description 1
- 230000000903 blocking effect Effects 0.000 description 1
- 239000010951 brass Substances 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 125000003178 carboxy group Chemical group [H]OC(*)=O 0.000 description 1
- 231100000357 carcinogen Toxicity 0.000 description 1
- 239000003183 carcinogenic agent Substances 0.000 description 1
- 239000004203 carnauba wax Substances 0.000 description 1
- 235000013869 carnauba wax Nutrition 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 230000000536 complexating effect Effects 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 238000012851 eutrophication Methods 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000011049 filling Methods 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 229910052816 inorganic phosphate Inorganic materials 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 238000004898 kneading Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 150000002736 metal compounds Chemical class 0.000 description 1
- 239000011368 organic material Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000002245 particle Substances 0.000 description 1
- FPISENDBCQYRQB-UHFFFAOYSA-N phenol;phosphoric acid Chemical compound OP(O)(O)=O.OC1=CC=CC=C1 FPISENDBCQYRQB-UHFFFAOYSA-N 0.000 description 1
- 239000004848 polyfunctional curative Substances 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920002379 silicone rubber Polymers 0.000 description 1
- 239000004945 silicone rubber Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
- 239000012756 surface treatment agent Substances 0.000 description 1
- 230000002195 synergetic effect Effects 0.000 description 1
- AYEKOFBPNLCAJY-UHFFFAOYSA-O thiamine pyrophosphate Chemical compound CC1=C(CCOP(O)(=O)OP(O)(O)=O)SC=[N+]1CC1=CN=C(C)N=C1N AYEKOFBPNLCAJY-UHFFFAOYSA-O 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 230000001988 toxicity Effects 0.000 description 1
- 231100000419 toxicity Toxicity 0.000 description 1
- 238000001721 transfer moulding Methods 0.000 description 1
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 238000005303 weighing Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G59/00—Polycondensates containing more than one epoxy group per molecule; Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups
- C08G59/18—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing
- C08G59/40—Macromolecules obtained by polymerising compounds containing more than one epoxy group per molecule using curing agents or catalysts which react with the epoxy groups ; e.g. general methods of curing characterised by the curing agents used
- C08G59/62—Alcohols or phenols
- C08G59/621—Phenols
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/01—Use of inorganic substances as compounding ingredients characterized by their specific function
- C08K3/013—Fillers, pigments or reinforcing additives
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/52—Encapsulations
- H01L33/56—Materials, e.g. epoxy or silicone resin
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L2201/00—Properties
- C08L2201/02—Flame or fire retardant/resistant
Landscapes
- Chemical & Material Sciences (AREA)
- Polymers & Plastics (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Organic Chemistry (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
Abstract
본 발명은 아래의 성분들을 포함하는 반도체 봉지제용 에폭시 수지 조성물에 관한 것으로, 본 발명의 수지 조성물은 인체 및 환경에 유해한 부산물을 발생시키는 난연제를 사용하지 않고도 우수한 난연성을 달성하며 이외에도 흡습성, 내열분해성, 성형성 등도 우수한 이점을 제공한다. The present invention relates to an epoxy resin composition for a semiconductor encapsulant comprising the following components, the resin composition of the present invention achieves excellent flame resistance without using a flame retardant that generates by-products harmful to humans and the environment, in addition to hygroscopicity, thermal decomposition resistance, Formability and the like also provide excellent advantages.
(A) 다방향족(multi-aromatic) 에폭시 수지; 5.0-15.0 중량%(A) multi-aromatic epoxy resins; 5.0-15.0 wt%
(B) 다방향족 경화제 또는 다방향족 경화제와 인변성 페놀노블락 경화제의(B) of the polyaromatic curing agent or polyaromatic curing agent and the modified phenol noblock curing agent
혼합 경화제; 1.99-9.5 중량% Mixed curing agents; 1.99-9.5 wt%
(C) 경화촉진제; 0.002-0.25 중량%(C) a curing accelerator; 0.002-0.25 wt%
(D) 무기충전제; 74-90 중량%(D) inorganic fillers; 74-90 wt%
(E) 커플링제; 0.02-1.0 중량% (E) coupling agents; 0.02-1.0 wt%
Description
본 발명은 반도체 봉지제용 에폭시 수지 조성물에 관한 것으로, 더욱 상세하게는 난연제를 포함하지 않고, 자기소화성을 갖는 에폭시 수지와 다방향족 경화제 또는 다방향족 경화제와 인변성 페놀 노블락 경화제의 혼합 경화제를 사용함으로써 난연성을 향상시킨 것을 특징으로 하는 반도체 봉지제용 에폭시 수지 조성물에 관한 것이다.The present invention relates to an epoxy resin composition for a semiconductor encapsulant, and more particularly, does not contain a flame retardant, and is flame retardant by using a mixed resin of an epoxy resin having a self-extinguishing property, a polyaromatic curing agent or a polyaromatic curing agent, and a modified phenolic noblock curing agent. It is related with the epoxy resin composition for semiconductor sealing agents which improved.
일반적으로 반도체 봉지제용 에폭시 수지에 대해서는 난연성이 요구되며, 대부분의 반도체 업체에서는 UL-94-V-O 수준의 난연성을 요구하고 있다. 반도체 봉지제용 에폭시 수지에 난연성을 부여하기 위해서는 난연제를 사용하여 반도체 봉지제용 에폭시 수지를 제조하는데, 난연제로는 주로 할로겐계 난연제 또는 할로겐계 난연제의 단점을 보완한 비할로겐계 난연제가 사용되고 있다. 할로겐계 난연제로는 구체적으로 브롬이나 염소계의 할로겐계 난연제를 사용하며, 이것과 함께 난연 상승 효과가 우수한 Sb203을 난연보조제로 사용한다. 한편, 비할로겐계 난연제로는 인화합물과 같은 비할로겐계 난연제를 사용하고 수산화알루미늄과 같은 금속수산화물이나 징크보레이트와 같은 무기금속화합물을 난연보조제로 사용하고 있다. 이러한 난연제를 반도체 봉지제용 에폭시 수지 조성물에 첨가할 때는 이러한 난연제를 에폭시 수지와 믹싱 및 니딩한 후 냉각시켜 최종 제품으로 타블레팅하여 제조한다.In general, flame retardancy is required for an epoxy resin for a semiconductor encapsulant, and most semiconductor companies require a flame retardancy of UL-94-VO level. In order to impart flame retardancy to an epoxy resin for semiconductor encapsulant, a flame retardant is used to prepare an epoxy resin for semiconductor encapsulant. As a flame retardant, a halogen-based flame retardant or a non-halogen-based flame retardant which supplements disadvantages of a halogen-based flame retardant is used. As the halogen-based flame retardant, a bromine or chlorine-based halogen flame retardant is used, and Sb 2 0 3 having excellent flame retardant synergistic effect is used as a flame retardant aid. On the other hand, non-halogen-based flame retardants are used non-halogen-based flame retardants such as phosphorus compounds and inorganic metal compounds such as aluminum hydroxide or zinc borate as a flame retardant aid. When the flame retardant is added to the epoxy resin composition for semiconductor encapsulant, the flame retardant is prepared by mixing and kneading with the epoxy resin and then cooling and tableting the final product.
그러나, 할로겐계 난연제를 사용하는 경우에는 소각시 또는 화재시에 다이옥신(dioxin)이나 다이퓨란(difuran) 등의 유독성 발암물질을 발생시키고 연소시 발생하는 HBr 및 HCl 등의 가스는 인체에 유해하며 반도체 칩이나 리드프레임에서 부식(corrosion)을 발생시키는 주원인으로 작용한다. 한편 인화합물과 같은 비할로겐계 난연제의 경우에는 연소시 미미하지만 약간의 독성을 가지고 있고 대량의 무기인산류를 강과 하천에 방류할 경우 하천의 부영양화를 촉진하여 심각한 환경오염을 초래할 수 있다.However, when halogen-based flame retardants are used, toxic carcinogens such as dioxin or difuran are generated during incineration or fire, and gases such as HBr and HCl generated during combustion are harmful to the human body, and semiconductors It acts as the main cause of corrosion in chips or leadframes. On the other hand, non-halogen flame retardants such as phosphorus compounds are insignificant at the time of combustion, but have some toxicity. If large amounts of inorganic phosphates are discharged into rivers and rivers, they can cause eutrophication of rivers and cause serious environmental pollution.
본 발명의 목적은 상술한 바와 같은 종래 기술에서 난연성 부여를 위해 사용되었던 인체 및 환경에 대해 유해성을 가지는 할로겐계 및 비할로겐계 난연제를 사용하지 않고 자기소화성을 가진 에폭시 수지와 경화제를 사용하여 난연성이 우수한 반도체 봉지제용 에폭시 수지 조성물을 제공하는 것이다. An object of the present invention is to use a flame retardant using an epoxy resin and a curing agent having self-extinguishing properties without using halogen-based and non-halogen-based flame retardants that are harmful to humans and the environment that were used for imparting flame retardancy in the prior art as described above. It is to provide an excellent epoxy resin composition for semiconductor encapsulant.
즉, 본 발명은 아래의 성분들을 포함하는 반도체 봉지제용 에폭시 수지 조성물을 제공한다.That is, the present invention provides an epoxy resin composition for a semiconductor encapsulant comprising the following components.
(A) 다방향족(multi-aromatic) 에폭시 수지; 5.0-15.0 중량%(A) multi-aromatic epoxy resins; 5.0-15.0 wt%
(B) 다방향족 경화제 또는 다방향족 경화제와 인변성 페놀노블락 경화제의 (B) of the polyaromatic curing agent or polyaromatic curing agent and the modified phenol noblock curing agent
혼합 경화제; 1.99-9.95 중량% Mixed curing agents; 1.99-9.95 wt%
(C) 경화촉진제; 0.002-0.25 중량%(C) a curing accelerator; 0.002-0.25 wt%
(D) 무기충전제; 74-90 중량%(D) inorganic fillers; 74-90 wt%
(E) 커플링제; 0.02-1.0 중량% (E) coupling agents; 0.02-1.0 wt%
이하에서 본 발명의 반도체 봉지제용 에폭시 수지 조성물의 각 구성성분에 대하여 더욱 상세히 설명한다.Hereinafter, each component of the epoxy resin composition for semiconductor sealing agents of this invention is demonstrated in detail.
(A) 다방향족(multi-aromatic) 에폭시 수지(A) multi-aromatic epoxy resins
본 발명의 반도체 봉지제용 에폭시 수지 조성물을 구성하는 다방향족 에폭시 수지는 당량이 250-300이고 하기 화학식 1의 구조를 갖는다.The polyaromatic epoxy resin constituting the epoxy resin composition for a semiconductor encapsulant of the present invention has an equivalent weight of 250-300 and has the structure of Formula 1 below.
(상기 식에서, n은 0-7 사이의 수이다.)(Where n is a number between 0 and 7)
본 발명에서 사용되는 상기 다방향족 에폭시 수지는 페놀 골격을 근간으로 해서 중간에 다이페닐을 가지고 있는 구조를 하고 있기 때문에, 수분흡수율이 낮고 인성이 우수하며, 내산화성이 좋고 접착력이 우수할 뿐만 아니라 내크랙성 및 난연성이 우수하다. 이러한 본 발명에서 사용되는 다방향족 에폭시 수지는 가교 밀도가 낮아서 착화시 고온에서 고무 형태의 발포층을 형성한다.Since the polyaromatic epoxy resin used in the present invention has a structure having diphenyl in the middle based on a phenol skeleton, it has a low water absorption rate, excellent toughness, good oxidation resistance, good adhesion and It is excellent in crackability and flame retardancy. The multi-aromatic epoxy resin used in the present invention has a low crosslinking density to form a foamed layer in the form of a rubber at high temperature during complexing.
본 발명의 반도체 봉지제용 에폭시 수지 조성물에서 다방향족 에폭시 수지의 사용량은 전체 조성물중 5.0-15.0중량%인 것이 바람직하며, 상기 범위를 벗어나면 본 발명의 목적을 달성할 수 없다.The amount of the multi-aromatic epoxy resin in the epoxy resin composition for semiconductor encapsulant of the present invention is preferably 5.0-15.0% by weight in the total composition, it can not achieve the object of the present invention outside the above range.
(B) 다방향족 경화제 또는 다방향족 경화제와 인변성 페놀노블락 경화제의 혼합 경화제 (B) A mixed curing agent of a polyaromatic curing agent or a polyaromatic curing agent and a modified phenol noblock curing agent
본 발명의 반도체 봉지제용 에폭시 수지 조성물중의 경화제는 하기 화학식 2의 다방향족 경화제 또는 상기 다방향족 경화제와 하기 화학식 3의 인변성 페놀노블락 경화제를 혼합한 것이다.The hardening | curing agent in the epoxy resin composition for semiconductor sealing agents of this invention mixes the polyaromatic hardening | curing agent of following General formula (2) or the said polyaromatic hardening | curing agent, and the phosphate phenol noblock hardening | curing agent of following General formula (3).
(상기 식에서, n은 0-7 사이의 수이다.)(Where n is a number between 0 and 7)
(상기 식에서, n은 0-7 사이의 수이다.)(Where n is a number between 0 and 7)
본 발명에서 상기 화학식 2의 다방향족 경화제는 상기 다방향족 에폭시 수지와 반응하여 연소시에 에폭시 수지 조성물에 발포층을 형성하여 주변의 산소 및 연소열의 전달을 차단함으로써 난연성을 달성하게 된다. 본 발명의 반도체 봉지제용 에폭시 수지 조성물에서는 가교 구조에 의한 다방향족 구조의 내열분해성과 발포층의 안정성에 의해 난연성이 확보된다. 기존의 오르소크레졸노블락 에폭시 수지와 페놀노블락계 경화제가 사용되는 에폭시 수지 조성물에서는 유리전이온도가 높아서 내열성이 우수하지만 가교밀도가 높아 구조가 경직되어 발포층이 쉽게 형성되지 못하여 난연성이 나타나지 않게 되는 반면에, 본 발명에서는 다방향족 에폭시 수지와 다방향족 경화제가 결합하여 우수한 난연성이 확보된다. 또한 인변성 페놀노블락 경화제를 다방향족 경화제와 함께 사용하면 다방향족 경화제만을 단독으로 사용하는 경우에 비해 난연성이 더 향상되는 효과를 수득할 수 있다. 본 발명에서 다방향족 경화제와 인변성 페놀노블락 경화제의 혼합비는 100:0 내지 50:50의 범위내이다.In the present invention, the multi-aromatic curing agent of Formula 2 reacts with the multi-aromatic epoxy resin to form a foam layer in the epoxy resin composition during combustion to achieve flame retardancy by blocking the transfer of the surrounding oxygen and combustion heat. In the epoxy resin composition for semiconductor encapsulants of the present invention, flame retardancy is secured by thermal decomposition resistance of the multi-aromatic structure and crosslinked structure stability. In the conventional epoxy resin composition using the orthocresol noblock epoxy resin and the phenol noblock curing agent, the glass transition temperature is high, and the heat resistance is excellent, but the crosslinking density is high, the structure is rigid, and the foam layer is not easily formed, so that the flame retardancy does not appear. In the present invention, the polyaromatic epoxy resin and the polyaromatic curing agent are bonded to each other to ensure excellent flame retardancy. In addition, when the modified phenol noblock curing agent is used together with the polyaromatic curing agent, it is possible to obtain an effect of further improving the flame retardancy compared to the case of using only the polyaromatic curing agent alone. In the present invention, the mixing ratio of the polyaromatic curing agent and the modified phenol noblock curing agent is in the range of 100: 0 to 50:50.
본 발명에서 사용되는 인변성 페놀노블락 경화제는 기존의 페놀노블락 경화제에 인을 함유한 형태의 경화제로서 내산화성, 내후성 및 내열성이 우수할 뿐만 아니라 난연성이 우수한 특징을 갖는다.Phosphorus-modified phenol noblock curing agent used in the present invention is a curing agent of the form containing phosphorus in the existing phenol noblock curing agent as well as excellent in oxidation resistance, weather resistance and heat resistance as well as excellent flame resistance.
본 발명에서 다방향족 경화제와 인변성 페놀노블락 경화제의 사용량은 전체 조성물에 대하여 1.99 내지 9.95중량%이다. 본 발명의 반도체 봉지제용 에폭시 수지 조성물에서 경화제의 함량이 1.99중량% 미만이면 경화제 사용시 경화반응이 충분히 일어나지 않아서 성형이 이루어지지 않게 되고 물성이 현저하게 저하되며, 이와 반대로 9.95중량%를 초과하면 봉지제 내에 잔류물이 형성되어 신뢰성이 불량하게 되며 불필요한 원가 상승의 원인이 된다.In the present invention, the amount of the polyaromatic curing agent and the modified phenol noblock curing agent is 1.99 to 9.95% by weight based on the total composition. When the content of the curing agent in the epoxy resin composition for semiconductor encapsulant of the present invention is less than 1.99% by weight, the curing reaction does not sufficiently occur when the curing agent is used, so that molding is not performed and the physical properties are significantly lowered. Residues are formed in them, which leads to poor reliability and unnecessary cost rises.
(C) 경화촉진제(C) curing accelerator
본 발명에서 경화촉진제로는 트리페닐포스핀(TPP:triphenylphosphine)을 사용하며 이를 단독으로 사용하거나 또는 경화제와 혼합하여 용융하여 멜트마스타베치(MMB)를 만들어 사용한다. 본 발명의 반도체 봉지제용 에폭시 수지 조성물중 경화촉진제의 함량은 전체 조성물중 0.002 내지 0.25중량%로, 경화촉진제의 함량이 0.25중량%를 초과하면 경화반응에 이상이 발생하여 물성이 저하될 수 있으므로 상기 범위내로 사용하되 에폭시 수지 봉지제의 공정조건에 따라 조절하여 사용할 수 있다.In the present invention, as a hardening accelerator, triphenylphosphine (TPP: triphenylphosphine) is used and used alone or mixed with a hardening agent to melt to make a melt masterbatch (MMB). The content of the curing accelerator in the epoxy resin composition for semiconductor encapsulant of the present invention is 0.002 to 0.25% by weight of the total composition, when the content of the curing accelerator exceeds 0.25% by weight, abnormalities in the curing reaction may occur and the physical properties may be lowered. It can be used within the range of control according to the process conditions of the epoxy resin encapsulant.
(D) 무기충전제(D) inorganic filler
본 발명의 반도체 봉지제용 에폭시 수지 조성물중 무기충전제는 평균입도가 0.1-40㎛인 용융실리카를 사용하며, 충전량은 조성물 전체에 대해 74-90중량%이다. 무기충전제의 충전량이 74중량% 미만이면 충분한 강도를 얻기 어럽게 되며 수분 흡수로 인한 알루미늄 패드 부식이 일어날 가능성이 높아지고, 이와 반대로 90중량%를 초과하면 유동성이 좋지 않아서 반도체 조립시 성형성에서 불량이 발생할 수 있다. 무기충전제를 직접 투입할 경우 믹싱시 분산이 잘 되지 않고 다른 성분 원료와 상용성이 좋지 않아서 반도체 조립시 성형성 불량을 야기하는 문제점이 발생할 수 있다. 따라서, 본 발명에서 무기충전제는 커플링제로 코팅하여 첨가하는 것이 바람직하며, 이와 같이 하면 분산성이 향상되고 무기물과 유기물간의 상용성이 증가되어 성형성이 우수해진다.Inorganic fillers in the epoxy resin composition for semiconductor encapsulants of the present invention use a molten silica having an average particle size of 0.1-40㎛, the filling amount is 74-90% by weight relative to the entire composition. If the amount of the inorganic filler is less than 74% by weight, it is difficult to obtain sufficient strength, and the possibility of corrosion of the aluminum pad due to moisture absorption increases. On the contrary, if the content of the inorganic filler exceeds 90% by weight, the fluidity is not good. May occur. When the inorganic filler is directly added, the dispersion may not be well performed during mixing, and the compatibility with other ingredients may be poor, resulting in poor moldability when assembling the semiconductor. Therefore, in the present invention, the inorganic filler is preferably added by coating with a coupling agent. In this case, the dispersibility is improved and the compatibility between the inorganic material and the organic material is increased, thereby improving the moldability.
(E) 커플링제(E) coupling agent
본 발명에서 사용되는 커플링제는 아민계 실란 화합물이며 그의 사용량은 전체 수지 조성물중 0.02-1.0 중량%이다. 커플링제를 1.0 중량%를 초과하는 양으로 과량 사용하면 미반응 커플링제가 잔류하여 성형성에 취약한 결과를 초래하며, 이와 반대로 0.02 중량% 미만으로 사용하면 분산성이 저하되어 니딩(kneading)시 겔(gel) 불량 발생율이 높게 나타나며 반도체 조립시 성형성 불량이 발생하기 때문에 본 발명에서 커플링제는 상기 범위내로 사용하는 것이 필요하다.The coupling agent used in the present invention is an amine silane compound, and the amount of the coupling agent is 0.02-1.0 wt% in the total resin composition. Excessive use of the coupling agent in an amount exceeding 1.0% by weight results in unreacted coupling agent remaining, which results in weak moldability. On the contrary, when the coupling agent is used in an amount less than 0.02% by weight, the dispersibility is lowered. Gel) Since the defect occurrence rate is high and moldability defects occur during semiconductor assembly, the coupling agent in the present invention needs to be used within the above range.
본 발명의 반도체 봉지제용 에폭시 수지 조성물에는 상술한 성분들 이외에, 전체 수지 조성물의 물성을 해하지 않는한 표면처리제, 착색제, 가소성 부여제, 이형제, 카르복실계 왁스, 응력저감화제, 등이 필요에 따라 첨가될 수 있다. 예를 들어, 가소성 부여제로는 통상적으로 실리콘 고무나 에폭시 변성 실리콘 오일을 사용할 수 있고, 이형제로서는 고급 지방산, 고급 지방산 금속염, 에스테르계 왁스 등을 사용할 수 있다. 이 밖에 착색제로는 카본블랙, 유·무기염료 등을 사용할 수 있다. The epoxy resin composition for semiconductor encapsulant of the present invention, in addition to the above-described components, as long as the physical properties of the entire resin composition are not impaired, surface treatment agents, colorants, plasticizers, mold release agents, carboxyl waxes, stress reducing agents, and the like are necessary. Can be added. For example, as a plasticizer, silicone rubber and epoxy modified silicone oil can be used normally, and as a mold release agent, higher fatty acid, higher fatty acid metal salt, ester wax, etc. can be used. In addition, carbon black, an organic or inorganic dye, etc. can be used as a coloring agent.
본 발명의 반도체소자 밀봉용 에폭시 수지 조성물은 일반적으로 소정의 배합량의 각 성분들을 헨셀믹서나 뢰디게 믹서를 이용하여 1차로 균일하게 혼합한 뒤, 롤밀이나 니이더를 이용하여 용융 혼련하고나서 냉각시키고 분쇄기를 이용하여 분쇄함으로써 타블렛 형태의 최종 제품을 수득하는 방법으로 제조될 수 있다.In general, the epoxy resin composition for sealing a semiconductor device of the present invention is generally uniformly mixed with each component of a predetermined compounding amount using a Henschel mixer or a Rodige mixer, and then melt-kneaded using a roll mill or a kneader and then cooled. It may be prepared by a method of obtaining a final product in the form of a tablet by grinding using a grinder.
본 발명의 에폭시수지 조성물을 사용하여 반도체 소자를 밀봉하는 방법으로는 저압 트랜스퍼 성형법이 가장 일반적으로 사용되는 방법이나, 사출성형법(Injection Molding) 또는 캐스팅(Casting) 등의 방법으로도 성형할 수 있다.As a method of sealing a semiconductor device using the epoxy resin composition of the present invention, a low pressure transfer molding method is most commonly used, or may be molded by an injection molding method or a casting method.
이하 본 발명을 실시예에 의거 더욱 상세히 설명하나, 본 발명이 하기 실시예에 의해 제한되는 것은 아니다.Hereinafter, the present invention will be described in more detail with reference to Examples, but the present invention is not limited by the following Examples.
실시예 1Example 1
본 발명의 반도체 봉지제용 에폭시 수지 조성물을 제조하기 위해, 하기 표 1에 기재된 바와 같이, 각 성분들을 정확하게 계량하여 헨셀믹서로 균일하게 원료를 혼합한 후, 2-롤밀(2-roll mill)을 사용하여 10℃에서 7분간 용융혼련하여 공기 중에서 냉각시킨 후 후드믹서를 사용하여 분쇄하여 에폭시 수지 조성물을 제조하고 제반 물성을 측정하여 그 결과를 하기 표 1에 나타내었다. 본 실시예에서 경화촉진제로는 트리페닐포스핀, 커플링제로는 아민 실란을, 착색제로는 카본블랙을 사용하고 기타 조제로는 이온포착제(DHT-4A)를 첨가하였다. 본 실시예에서 사용된 커플링제는 무기충전제에 커플링제를 처리한 상태로 투입하였다. 본 발명에서 물성은 다음과 같이 평가하였다.In order to manufacture the epoxy resin composition for a semiconductor encapsulant of the present invention, as shown in Table 1 below, by accurately weighing each component and uniformly mixing the raw materials with a Henschel mixer, a 2-roll mill was used. The mixture was melt kneaded at 10 ° C. for 7 minutes, cooled in air, and pulverized using a hood mixer to prepare an epoxy resin composition, and measured in general. The results are shown in Table 1 below. In the present embodiment, triphenylphosphine as a curing accelerator, amine silane as a coupling agent, carbon black as a coloring agent, and an ion trapping agent (DHT-4A) were added as other preparations. The coupling agent used in this example was added to the inorganic filler in a state where the coupling agent was treated. Physical properties in the present invention were evaluated as follows.
[물성 평가 방법][Property evaluation method]
*난연성: UL94 실험법인 수직 난연실험법으로 측정하였다.* Flame retardancy: measured by the vertical flame retardant test method UL94 test method.
*스파이럴 플로우; EMMI 규격을 기준으로 금형을 제작하여 성형온도 175℃, 성형압력 70Kgf/㎠에서 유동길이를 평가하였다.Spiral flow; Molds were manufactured based on the EMMI standard, and the flow length was evaluated at a molding temperature of 175 ° C. and a molding pressure of 70 Kgf / cm 2.
*겔타임; 분말 시료를 가열판 위에 놓고 압설자로 압착하며 가열할 때 용융이 시작되는 시점부터 가열판 상에 얇을 피막을 형성한 후 황동제 핀으로 선을 그을 때 점성을 잃게 되는 시점까지의 시간을 측정하였다.Gel time; When the powder sample was placed on a heating plate and pressed with a snow squeezer, the time was measured from the point of melting start to the point of losing viscosity when drawing a thin film on the heating plate and drawing a line with a brass pin.
* 부착강도; 몰딩된 시편을 175℃에서 6시간 동안 후경화시킨 후 U.T.M.을 사용하여 부착강도를 측정하였다(U.T.M. 사용 조건; 하중속도 5㎜/min, 하중 100㎏).* Adhesion strength; After the molded specimen was cured at 175 ° C. for 6 hours, adhesion strength was measured using U.T.M. (U.T.M. conditions of use; load rate of 5 mm / min, load of 100 kg).
*유리전이온도; 굴곡시험용 몰드를 사용하여 시험편을 제작하여 175℃에서 6시간 후경화시킨후 유리전이온도를 측정하였다.Glass transition temperature; After the test piece was prepared using a bending test mold, the glass transition temperature was measured after curing at 175 ° C. for 6 hours.
*스티킹(sticking) 횟수 및 틸트; 50/44TSOP 패키지에 조립시편을 만들어 스티킹 횟수와 틸트 같은 성형성을 평가하였다.* Sticking frequency and tilt; Assembly specimens were made in 50/44 TSOP packages to evaluate the number of sticking and formability, such as tilt.
*흡습율; 6시간 동안 후경화시킨 후 PCT(Pressure Cooker Test)를 사용하여 2기압하에서 121℃, 100% RH의 항온항습 조건으로 각각 24 시간 동안 처리한 후 흡습율을 평가하였다. * Moisture absorption; After post-curing for 6 hours using PCT (Pressure Cooker Test) was treated for 24 hours at 121 ℃, 100% RH constant temperature and humidity conditions at 2 atm after each moisture absorption rate was evaluated.
*부식성; 조립 시편을 IR 리플로우(Reflow)에서 245℃, 10초 동안 통과시킨다음 121℃, 100%RH의 PCT를 사용하여 168 시간 동안 처리한 후 칩 패드의 부식 발생 상태를 평가하였다.*causticity; The assembly specimens were passed at 245 ° C. for 10 seconds in IR Reflow and then treated for 168 hours using 121 ° C., 100% RH of PCT to evaluate the corrosion occurrence of the chip pads.
실시예 2Example 2
다방향족 경화제를 3.75%만 사용하고 대신에 인변성 페놀 노블락 경화제를 1.61% 추가한 것을 제외하고는 실시예 1과 동일한 조건으로 에폭시 수지 조성물을 제조한 후 물성을 평가하여 그 결과를 하기 표 1에 함께 나타내었다.Except for using only 3.75% of the multi-aromatic curing agent and 1.61% of the modified phenolic noblock curing agent instead of preparing the epoxy resin composition under the same conditions as in Example 1 and evaluated the physical properties of the results in Table 1 Shown together.
실시예 3Example 3
다방향족 경화제를 4.28%만 사용하고 대신에 인변성 페놀 노블락 경화제를 1.07% 추가한 것을 제외하고는 실시예 1과 동일한 조건으로 에폭시 수지 조성물을 제조한 후 물성을 평가하여 그 결과를 하기 표 1에 함께 나타내었다.Except for using only 4.28% of the multi-aromatic curing agent and 1.07% of the modified phenolic noblock curing agent instead of to prepare the epoxy resin composition under the same conditions as in Example 1 to evaluate the physical properties of the results in Table 1 Shown together.
실시예 4Example 4
다방향족 경화제를 4.82%만 사용하고 대신에 인변성 페놀 노블락 경화제를 0.54% 추가한 것을 제외하고는 실시예 1과 동일한 조건으로 에폭시 수지 조성물을 제조한 후 물성을 평가하여 그 결과를 하기 표 1에 함께 나타내었다.Except for using only 4.82% of the multi-aromatic curing agent and adding 0.54% of the modified phenolic noblock curing agent instead of to prepare the epoxy resin composition under the same conditions as in Example 1 to evaluate the physical properties and the results are shown in Table 1 Shown together.
비교예 1Comparative Example 1
실시예 1의 다방향족 에폭시 수지 대신에 오르소크레졸노블락 수지 6.81%를 사용하고 다방향족 경화제 대신에 페놀노블락 경화제를 사용하고 난연제 Br-에폭시 0.5%와 난연조제 Sb2O3 0.5%를 추가한 것외에는 실시예 1과 동일한 조건으로 에폭시 수지 조성물을 제조한 후 물성을 평가하여 그 결과를 하기 표 1에 함께 나타내었다.6.81% of orthocresol noblock resin was used in place of the polyaromatic epoxy resin of Example 1, and a phenol noblock curing agent was used in place of the polyaromatic curing agent, and 0.5% of flame retardant Br-epoxy and 0.5% of flame retardant aid Sb 2 O 3 were added. Except for preparing the epoxy resin composition under the same conditions as in Example 1, the physical properties were evaluated and the results are shown in Table 1 together.
비교예 2Comparative Example 2
실시예 1의 다방향족 에폭시 수지 대신에 오르소크레졸노블락 수지를 사용하고 다방향족 경화제의 함량을 5.35%에서 4.28%로 줄이고 대신에 페놀노블락 경화제를 1.07% 추가한 것외에는 실시예 1과 동일한 조건으로 에폭시 수지 조성물을 제조한 후 물성을 평가하여 그 결과를 하기 표 1에 함께 나타내었다.In the same conditions as in Example 1 except for using orthocresol noblock resin instead of the polyaromatic epoxy resin of Example 1 and reducing the content of the polyaromatic curing agent from 5.35% to 4.28% and adding 1.07% of a phenol noblock curing agent instead. After preparing the epoxy resin composition, the physical properties were evaluated, and the results are shown in Table 1 together.
비교예 3Comparative Example 3
실시예 1의 다방향족 경화제 대신에 페놀노블락 경화제를 사용한 것을 제외하고는 실시예 1과 동일한 조건으로 에폭시 수지 조성물을 제조한 후 물성을 평가하여 그 결과를 하기 표 1에 함께 나타내었다.Except for using a phenol noblock curing agent in place of the multi-aromatic curing agent of Example 1 after preparing an epoxy resin composition under the same conditions as in Example 1, the physical properties were evaluated and the results are shown in Table 1 together.
본 발명의 반도체 봉지제용 에폭시 수지 조성물은 연소시 인체 및 환경에 유해한 부산물을 발생시키는 할로겐계 난연제 및 연소시 발생하는 기체가 인체에 유해하고 반도체 칩 및 리드프레임의 부식을 초래하는 비할로겐계 난연제를 사용하지 않고도 우수한 난연성을 달성할 수 있다. 또한, 본 발명의 에폭시 수지 조성물은 오르소크레졸노블락 및 바이페닐 에폭시수지와 페놀노블락 경화제를 사용하는 기존의 수지 조성물 보다 흡습성, 내열분해성이 더 우수하며 무기충전제를 커플링제로 코팅하여 첨가하므로 분산 문제로 인한 반도체 조립시 나타나는 성형성 불량을 개선할 수 있다.The epoxy resin composition for semiconductor encapsulant of the present invention is a halogen-based flame retardant that generates by-products harmful to humans and the environment during combustion, and non-halogen-based flame retardants in which gases generated during combustion are harmful to the human body and cause corrosion of semiconductor chips and lead frames. Excellent flame retardancy can be achieved without using. In addition, the epoxy resin composition of the present invention has better hygroscopicity and thermal decomposition resistance than conventional resin compositions using orthocresol noblock and biphenyl epoxy resins and phenol noblock curing agents, and the inorganic filler is coated with a coupling agent to add dispersion problems. It is possible to improve the moldability defects caused during assembly of the semiconductor.
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| KR100441217B1 (en) * | 2001-07-11 | 2004-07-22 | 한장희 | High heat resistance PMC composite using inorganic filler treated with coupling agent and Process for manufacturing the same |
| KR100809454B1 (en) * | 2006-12-28 | 2008-03-06 | 제일모직주식회사 | Epoxy resin composition for encapsulating semiconductor device and the semiconductor device using the same |
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| JPH04183710A (en) * | 1990-11-16 | 1992-06-30 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing semiconductor |
| JPH08337709A (en) * | 1995-04-10 | 1996-12-24 | Shin Etsu Chem Co Ltd | Epoxy resin composition for semiconductor sealing and semiconductor device |
| KR19980018709A (en) * | 1996-08-22 | 1998-06-05 | 가나이 쓰토무 | Resin-sealed semiconductor device and manufacturing method |
| JPH10182791A (en) * | 1996-11-11 | 1998-07-07 | Toray Ind Inc | Epoxy resin composition for sealing semiconductor and semiconductor device |
| JPH11269346A (en) * | 1998-03-23 | 1999-10-05 | Hitachi Chem Co Ltd | Epoxy resin composition for sealing semiconductor and semiconductor device using the composition |
| KR20010009179A (en) * | 1999-07-08 | 2001-02-05 | 유현식 | Epoxy Molding Compound for Semiconductor Encapsulement |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH04183710A (en) * | 1990-11-16 | 1992-06-30 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing semiconductor |
| JPH08337709A (en) * | 1995-04-10 | 1996-12-24 | Shin Etsu Chem Co Ltd | Epoxy resin composition for semiconductor sealing and semiconductor device |
| KR19980018709A (en) * | 1996-08-22 | 1998-06-05 | 가나이 쓰토무 | Resin-sealed semiconductor device and manufacturing method |
| JPH10182791A (en) * | 1996-11-11 | 1998-07-07 | Toray Ind Inc | Epoxy resin composition for sealing semiconductor and semiconductor device |
| JPH11269346A (en) * | 1998-03-23 | 1999-10-05 | Hitachi Chem Co Ltd | Epoxy resin composition for sealing semiconductor and semiconductor device using the composition |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| KR101373572B1 (en) * | 2013-06-13 | 2014-03-13 | 한국화학연구원 | Polyphenol type epoxy molding compound of ic packaging |
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