JP3072099B1 - Sealing resin composition and semiconductor sealing device - Google Patents

Abstract

Abstract: PROBLEM TO BE SOLVED: To use a novel phosphorus-based flame retardant that does not particularly contain a halogen (chlorine, bromine) compound and a metal oxide, and has a flame-retardant, moldable and reliable resin composition for sealing. And a semiconductor sealing device. (A) an epoxy resin, (B) a phenolic resin, (C) an organic phosphorus compound represented by the following formula: (D) an inorganic filler is an essential component, and the organic phosphorus compound (C) is 10 to 50% by weight based on the entire resin composition;
The sealing resin composition contains the inorganic filler (D) in a ratio of 40 to 95% by weight. Further, the present invention is a semiconductor sealing device in which a semiconductor chip is sealed with a cured product of the sealing resin composition.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

TECHNICAL FIELD The present invention relates to a halogen (chlorine,
Bromine) without the addition of compounds and metal oxides,
The present invention relates to an encapsulating resin composition and a semiconductor encapsulating device having excellent flame retardancy, and excellent in moldability and reliability.

[0002]

2. Description of the Related Art In a semiconductor device, it is general that a sealing resin is provided with flame retardancy. As a flame retardant formulation, a halogen (chlorine, bromine) compound and a metal oxide are used alone or in combination. Shows the flame retardant effect. Specifically, a combination of a brominated epoxy resin and antimony trioxide is generally used. However, halogen (chlorine, bromine) compounds added to exhibit the flame retardant effect of the sealing resin composition,
Metal oxides, especially antimony trioxide, added especially to help the brominated epoxy resin and its flame retardant effect,
There is a disadvantage that the reliability of the semiconductor device is reduced.
Not only that, but the negative effects on the environment have recently been pointed out. For this reason, there is a strong demand for the development of a sealing resin composition which is excellent in moldability and reliability and does not contain a halogen (chlorine, bromine) compound and a metal oxide. Studies on metal hydrates and the like have been widely promoted. However, metal hydrates have the drawbacks that not only cannot sufficient moldability be ensured, but also that the hygroscopic characteristics of the molded article are deteriorated, and the reliability of the semiconductor encapsulation device is greatly reduced. Therefore, there has been a strong demand for the development of a sealing resin composition which does not contain a halogen (chlorine, bromine) compound and a metal oxide and has excellent moldability, moisture resistance and reliability.

[0003]

DISCLOSURE OF THE INVENTION The present invention has been made to solve the above-mentioned drawbacks and to meet the above-mentioned demands, and contains a halogen (chlorine, bromine) compound and a metal oxide without containing a halogen compound. An object of the present invention is to provide a sealing resin composition and a semiconductor sealing device which are excellent in moldability and reliability while imparting flammability.

[0004]

Means for Solving the Problems The inventors of the present invention have made intensive studies to achieve the above object, and as a result, by adding a specific organic phosphorus compound to a resin composition in an appropriate ratio, a sufficient amount of the compound has been obtained. The inventors have found that the above-mentioned object is achieved by improving reliability together with excellent flame retardancy and moldability, thereby completing the present invention.

That is, the present invention provides (A) an epoxy resin,
(B) a phenolic resin, (C) an organic phosphorus compound represented by the following general formula, and

Embedded image (Where R is a hydrogen atom or an alkyl group, and n is 2
(D represents an integer from 10 to 10) (D) The inorganic filler is an essential component, and the (C) organic phosphorus compound is 10 to 50% by weight, and the (D) inorganic filler is 40 to 50% by weight based on the resin composition. A sealing resin composition characterized by being contained at a ratio of 95% by weight,
Further, there is provided a semiconductor encapsulating apparatus characterized in that a semiconductor chip is encapsulated with a cured product of the encapsulating resin composition.

Hereinafter, the present invention will be described in detail.

The epoxy resin (A) used in the present invention is not particularly limited in molecular structure and molecular weight as long as it is a compound having at least two epoxy groups in its molecule, and is generally used as a sealing material. Can be widely encompassed. For example, biphenyl type and bisphenol type aromatics, aliphatics such as cyclohexane derivatives, and those represented by the following general formulas may be mentioned.

[0008]

Embedded image (In the formula, n represents an integer of 1 or more.) These epoxy resins can be used alone or in combination of two or more.

The phenolic resin (B) used in the present invention is not particularly limited as long as it has two or more phenolic hydroxyl groups capable of reacting with the epoxy resin (A). As a concrete example, there is, for example, one represented by the following equation.

[0010]

Embedded image (Where n represents an integer of 1 or more)

Embedded image (Where n represents an integer of 1 or more). These resins can be used alone or in combination of two or more.

The compounding ratio of the phenol resin is such that the value of the equivalent ratio (a) / (b) between the epoxy group (a) of the epoxy resin and the phenolic hydroxyl group (b) of the phenol resin is 0.1 to 10; It is desirable to be within the range. If the equivalent ratio is less than 0.1 or exceeds 10, heat resistance, molding workability, and electrical properties of the cured product are deteriorated, and any case is not preferable. Therefore, it is better to limit to the above range.

The organophosphorus compound (C) used in the present invention is represented by the following structural formula (7).
Are preferred in terms of flame retardancy.

[0013]

Embedded image (Where R is a hydrogen atom or an alkyl group, and n is 2
Represents an integer from 10 to 10)

Embedded image The compounding ratio of the above organic phosphorus compound is desirably 10 to 50% by weight based on the whole resin composition. If the proportion is less than 10% by weight, a sufficient flame-retardant effect cannot be obtained, and if it exceeds 50% by weight, the properties of the sealing resin deteriorate, which is not suitable for practical use and is not preferred.

Examples of the inorganic filler (D) used in the present invention include silica powder, alumina powder, talc, calcium carbonate, titanium oxide and glass fiber, and these may be used alone or as a mixture of two or more. be able to. Among these, silica powder and alumina powder are particularly preferred. The inorganic filler is desirably contained in a proportion of 40 to 95% by weight based on the whole resin composition. If the proportion is less than 40% by weight, heat resistance, solder heat resistance, mechanical properties and moldability are deteriorated.
If the content exceeds% by weight, the bulk becomes large and the moldability is poor, which is not suitable for practical use.

The encapsulating resin composition of the present invention comprises the above-mentioned (A) epoxy resin, (B) phenolic resin, (C) organic phosphorus compound and (D) inorganic filler as main components. To the extent not contrary to the purpose of the above, and if necessary, for example, low release agents such as natural waxes, synthetic waxes, linear aliphatic metal salts, acid amides, esters, paraffinic release agents, elastomers, etc. A stressing component, a coloring agent such as carbon black, a treating agent for an inorganic filler such as a silane coupling agent, various curing accelerators, and the like can be appropriately added and blended.

A general method for preparing the encapsulating resin composition of the present invention as a molding material is to mix the aforementioned epoxy resin, phenol resin, organic phosphorus compound, inorganic filler and other components, After sufficiently mixing with a mixer or the like, a melt-mixing process using a hot roll or a mixing process using a kneader or the like is performed, and then the mixture is solidified by cooling and pulverized to an appropriate size to obtain a molding material. The molding material obtained in this way is used for sealing and coating electronic parts or electric parts including semiconductor encapsulation.
When applied to insulation or the like, excellent characteristics and reliability can be imparted.

The semiconductor device of the present invention can be easily manufactured by sealing a semiconductor chip using the sealing resin obtained as described above. The most common method of sealing is low pressure transfer molding, but sealing by injection molding, compression molding, casting or the like is also possible. The sealing resin composition is heated and cured at the time of sealing, and finally a semiconductor sealing device sealed with a cured product of this composition is obtained. Curing by heating is 15
Desirably, the composition is cured by heating to 0 ° C. or higher. As a semiconductor device for sealing, for example, an integrated circuit, a large-scale integrated circuit, a transistor, a thyristor, a diode, and the like are not particularly limited.

[0018]

According to the sealing resin composition and the semiconductor sealing device of the present invention, desired characteristics can be obtained by using a specific organic phosphorus compound as a resin component. That is, by blending the relevant organic phosphorus compound in an appropriate ratio, the resin composition is given excellent flame retardancy while maintaining sufficient moldability, and the reliability of the semiconductor device is improved from the stability of the compound. Can be done.

[0019]

Next, the present invention will be described with reference to examples, but the present invention is not limited to these examples. In the following Examples and Comparative Examples, “%” means “% by weight”.

Example 1 Cresol novolak type epoxy resin (epoxy equivalent 2
00) 14%, 11% of a novolak type phenol resin (phenol equivalent 105), 7% of the organic phosphorus compound shown in Chemical formula 8, 71% of fused silica powder, and 0.3% of ester waxes were blended at room temperature. Mix, then 90-
The mixture was kneaded at 95 ° C. and cooled and pulverized to prepare a molding material. This molding material was transfer-injected into a mold heated to 175 ° C. and cured to mold a molded product (sealed product). This molded article was tested for flammability and high-temperature storage characteristics. Table 1 shows the results.

Example 2 Cresol novolak type epoxy resin (epoxy equivalent 2
00) 14%, 11% of a novolak type phenol aralkyl resin (phenol equivalent: 175), 5% of the organic phosphorus compound shown in Chemical formula 8, 7% of fused silica powder, and 0.3% of ester waxes. Mixed as well,
The mixture was kneaded and pulverized to produce a molding material. A molded article was prepared in the same manner as in Example 1, and the molded article was tested for flammability and high-temperature storage characteristics. Table 1 shows the results.

Example 3 Cresol novolak epoxy resin (epoxy equivalent: 20)
0) 10%, 5% of novolak type phenol resin (phenol equivalent: 105), 2% of the organic phosphorus compound shown in Chemical formula 8, 80% of fused silica powder, and 0.2% of ester waxes as in Example 1. Similarly, mixing, kneading and pulverization were performed to produce a molding material. A molded article was prepared in the same manner as in Example 1, and the molded article was tested for flammability and high-temperature storage characteristics. Table 1 shows the results.

Example 4 Cresol novolak epoxy resin (epoxy equivalent: 20)
0) 10%, 5% of novolak type phenol resin (phenol equivalent 105), 2% of organic phosphorus compound (n = 2, R = CH ₃ ) shown in Chemical formula 7, 80% of fused silica powder
And 0.2% of ester waxes were mixed, kneaded and pulverized in the same manner as in Example 1 to produce a molding material. A molded article was prepared in the same manner as in Example 1, and the molded article was tested for flammability and high-temperature storage characteristics. Table 1 shows the results.

Comparative Example 1 Cresol novolak type epoxy resin (epoxy equivalent 2
00) 14% with a brominated epoxy resin (epoxy equivalent 2
70) 3%, 9% of novolak type phenol resin (phenol equivalent 105), 70% of fused silica powder, 1% of antimony trioxide and 0.3% of ester waxes were mixed, kneaded and pulverized in the same manner as in Example 1. To produce a molding material. A molded article was prepared in the same manner as in Example 1, and the molded article was tested for flammability and high-temperature storage characteristics. Table 1 shows the results.

Comparative Example 2 Cresol novolak epoxy resin (epoxy equivalent: 20)
0) 17%, 10% of novolak type phenol resin (phenol equivalent 105), 71% of fused silica powder and 0.3% of ester waxes were mixed in the same manner as in Example 1,
The mixture was kneaded and pulverized to produce a molding material. A molded article was prepared in the same manner as in Example 1, and the molded article was tested for flammability and high-temperature storage characteristics. Table 1 shows the results.

[0026]

[Table 1] * 1: 120 × 12 × 1. By transfer molding.
After forming molded articles of 6 mm and 120 × 12 × 3.2 mm, and left at 175 ° C. for 8 hours, a flammability test was performed based on UL-94V flame resistance test standard.

* 2: A silicon chip (test element) having two aluminum wirings was adhered to a copper frame using a molding material, and transfer molded at 175 ° C. for 2 minutes.
A molded article of DIP-14 was made and post-cured at 175 ° C. for 4 hours, then stored in a thermostat at 200 ° C., taken out every predetermined time, and subjected to a conduction test.

[0028]

As is clear from the above description and Table 1, the encapsulating resin composition and the semiconductor encapsulating apparatus of the present invention have excellent high-temperature storage characteristics despite excellent flame retardancy. As a result, disconnection failure due to corrosion of the electrode can be significantly reduced, and long-term reliability can be guaranteed.

──────────────────────────────────────────────────の Continued on the front page (51) Int.Cl. ⁷ identification symbol FI // (C08K 13/02 3:36 5: 5313) (58) Investigated field (Int.Cl. ⁷ , DB name) C08L 63 / 00-63/10 C08G 59/62 C08K 3/36 C08K 5/5313 H01L 23/29

Claims (4)

(57) [Claims] (A) an epoxy resin, (B) a phenolic resin, (C) an organic phosphorus compound represented by the following general formula, and (Where R is a hydrogen atom or an alkyl group, and n is 2
(D represents an integer from 10 to 10) (D) The inorganic filler is an essential component, and the (C) organic phosphorus compound is 10 to 50% by weight, and the (D) inorganic filler is 40 to 50% by weight based on the resin composition. A resin composition for encapsulation, comprising 95% by weight. 2. The sealing resin composition according to claim 1, wherein (D) the inorganic filler is a silica powder. 3. An epoxy resin, (B) a phenolic resin, (C) an organic phosphorus compound represented by the following general formula, and (Where R is a hydrogen atom or an alkyl group, and n is 2
(D represents an integer from 10 to 10) (D) The inorganic filler is an essential component, and the (C) organic phosphorus compound is 10 to 50% by weight, and the (D) inorganic filler is 40 to 50% by weight based on the resin composition. A semiconductor sealing device, wherein a semiconductor chip is sealed with a cured product of a sealing resin composition contained at a ratio of 95% by weight. 4. The semiconductor sealing device according to claim 3, wherein (D) the inorganic filler is a silica powder.