JPH03177451A - Sealing resin composition and semiconductor device - Google Patents
Sealing resin composition and semiconductor deviceInfo
- Publication number
- JPH03177451A JPH03177451A JP31493589A JP31493589A JPH03177451A JP H03177451 A JPH03177451 A JP H03177451A JP 31493589 A JP31493589 A JP 31493589A JP 31493589 A JP31493589 A JP 31493589A JP H03177451 A JPH03177451 A JP H03177451A
- Authority
- JP
- Japan
- Prior art keywords
- resin composition
- organic phosphorus
- phosphorus compound
- weight
- inorganic filler
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000011342 resin composition Substances 0.000 title claims abstract description 20
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 238000007789 sealing Methods 0.000 title claims abstract description 17
- 150000002903 organophosphorus compounds Chemical class 0.000 claims abstract description 15
- 229920003986 novolac Polymers 0.000 claims abstract description 13
- 239000003822 epoxy resin Substances 0.000 claims abstract description 11
- 239000005011 phenolic resin Substances 0.000 claims abstract description 11
- 229920000647 polyepoxide Polymers 0.000 claims abstract description 11
- 239000011256 inorganic filler Substances 0.000 claims abstract description 10
- 229910003475 inorganic filler Inorganic materials 0.000 claims abstract description 10
- 125000003118 aryl group Chemical group 0.000 claims abstract description 9
- 125000001931 aliphatic group Chemical group 0.000 claims abstract description 4
- 125000003710 aryl alkyl group Chemical group 0.000 claims description 3
- 239000010680 novolac-type phenolic resin Substances 0.000 claims description 3
- 239000000126 substance Substances 0.000 claims 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 6
- -1 bromine compound Chemical class 0.000 abstract description 5
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 abstract description 4
- 229910052794 bromium Inorganic materials 0.000 abstract description 4
- 238000002156 mixing Methods 0.000 abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract description 4
- 239000000843 powder Substances 0.000 abstract description 2
- 239000000377 silicon dioxide Substances 0.000 abstract description 2
- 229920005989 resin Polymers 0.000 description 9
- 239000011347 resin Substances 0.000 description 9
- 239000000203 mixture Substances 0.000 description 7
- 239000012778 molding material Substances 0.000 description 7
- 238000012360 testing method Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 239000004593 Epoxy Substances 0.000 description 4
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N Phenol Chemical compound OC1=CC=CC=C1 ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 description 4
- LNEPOXFFQSENCJ-UHFFFAOYSA-N haloperidol Chemical class C1CC(O)(C=2C=CC(Cl)=CC=2)CCN1CCCC(=O)C1=CC=C(F)C=C1 LNEPOXFFQSENCJ-UHFFFAOYSA-N 0.000 description 4
- RNFJDJUURJAICM-UHFFFAOYSA-N 2,2,4,4,6,6-hexaphenoxy-1,3,5-triaza-2$l^{5},4$l^{5},6$l^{5}-triphosphacyclohexa-1,3,5-triene Chemical compound N=1P(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP(OC=2C=CC=CC=2)(OC=2C=CC=CC=2)=NP=1(OC=1C=CC=CC=1)OC1=CC=CC=C1 RNFJDJUURJAICM-UHFFFAOYSA-N 0.000 description 3
- WSFSSNUMVMOOMR-UHFFFAOYSA-N Formaldehyde Chemical compound O=C WSFSSNUMVMOOMR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 239000003063 flame retardant Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229920001568 phenolic resin Polymers 0.000 description 3
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 description 2
- QTWJRLJHJPIABL-UHFFFAOYSA-N 2-methylphenol;3-methylphenol;4-methylphenol Chemical compound CC1=CC=C(O)C=C1.CC1=CC=CC(O)=C1.CC1=CC=CC=C1O QTWJRLJHJPIABL-UHFFFAOYSA-N 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical class [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 2
- 125000000217 alkyl group Chemical group 0.000 description 2
- ADCOVFLJGNWWNZ-UHFFFAOYSA-N antimony trioxide Chemical compound O=[Sb]O[Sb]=O ADCOVFLJGNWWNZ-UHFFFAOYSA-N 0.000 description 2
- 229930003836 cresol Natural products 0.000 description 2
- 125000003700 epoxy group Chemical group 0.000 description 2
- 239000005350 fused silica glass Substances 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 238000001721 transfer moulding Methods 0.000 description 2
- 239000001993 wax Substances 0.000 description 2
- 229930185605 Bisphenol Natural products 0.000 description 1
- 229930040373 Paraformaldehyde Natural products 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 1
- 150000001408 amides Chemical class 0.000 description 1
- QEZIKGQWAWNWIR-UHFFFAOYSA-N antimony(3+) antimony(5+) oxygen(2-) Chemical compound [O--].[O--].[O--].[O--].[Sb+3].[Sb+5] QEZIKGQWAWNWIR-UHFFFAOYSA-N 0.000 description 1
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 1
- 239000006229 carbon black Substances 0.000 description 1
- 238000005266 casting Methods 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000000567 combustion gas Substances 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 229940126214 compound 3 Drugs 0.000 description 1
- 238000013329 compounding Methods 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 125000000113 cyclohexyl group Chemical class [H]C1([H])C([H])([H])C([H])([H])C([H])(*)C([H])([H])C1([H])[H] 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 230000002542 deteriorative effect Effects 0.000 description 1
- 235000014113 dietary fatty acids Nutrition 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 150000002148 esters Chemical class 0.000 description 1
- 239000000194 fatty acid Substances 0.000 description 1
- 229930195729 fatty acid Natural products 0.000 description 1
- 150000004665 fatty acids Chemical class 0.000 description 1
- 239000000945 filler Substances 0.000 description 1
- 238000007429 general method Methods 0.000 description 1
- 230000009477 glass transition Effects 0.000 description 1
- 150000002366 halogen compounds Chemical class 0.000 description 1
- 125000005843 halogen group Chemical group 0.000 description 1
- 125000002887 hydroxy group Chemical group [H]O* 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000001746 injection moulding Methods 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000006082 mold release agent Substances 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000004843 novolac epoxy resin Substances 0.000 description 1
- 229920002866 paraformaldehyde Polymers 0.000 description 1
- 150000002989 phenols Chemical class 0.000 description 1
- 238000011417 postcuring Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 150000003839 salts Chemical class 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000010186 staining Methods 0.000 description 1
Landscapes
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
Abstract
Description
【発明の詳細な説明】
［発明の目的］
（産業上の利用分野）
本発明は、耐湿性に優れるとともに、臭素化合物を含有
しないでも難燃性を有する封止用樹脂組成物および該樹
脂組成物により封止される半導体装置に関する。Detailed Description of the Invention [Object of the Invention] (Industrial Application Field) The present invention provides a sealing resin composition that has excellent moisture resistance and flame retardancy even without containing a bromine compound, and the resin composition. The present invention relates to a semiconductor device sealed with an object.
（従来の技術）
近年、環境問題が特にクローズアップされ、半導体装置
を廃棄した場合、その燃焼ガスの有害性が問われるよう
になってきた。 封止用樹脂を難燃化する方法として、
臭素化エポキシ樹脂や、三酸化アンチモンを併用した臭
素化エポキシ樹脂が用いられている。(Prior Art) In recent years, environmental issues have attracted particular attention, and when semiconductor devices are disposed of, the harmfulness of combustion gases from them has come to be questioned. As a method to make sealing resin flame retardant,
Brominated epoxy resins and brominated epoxy resins combined with antimony trioxide are used.
（発明が解決しようとする課題）
しかしながら、封止用樹脂として使用されている臭素化
エポキシ樹脂等は燃焼中に臭素化合物を発生するため、
その危険性が指摘されている。(Problem to be solved by the invention) However, since brominated epoxy resins used as sealing resins generate bromine compounds during combustion,
The danger of this has been pointed out.
また、半導体装置の特性上にも、臭素化合物等ハロゲン
化合物は、アルミ配線を腐蝕しやすいため、耐湿性能を
悪くする欠点がある。In addition, due to the characteristics of semiconductor devices, halogen compounds such as bromine compounds tend to corrode aluminum wiring, which has the disadvantage of deteriorating moisture resistance.
本発明は、上記の欠点を解消するためになされたもめで
、難燃剤として臭素化合物を使用しないで難燃性を付与
し、かつ耐湿性にも優れた、信頼性の高い封止用樹脂組
成物および半導体装置を提供しようとするものである。The present invention was made in order to eliminate the above-mentioned drawbacks, and the present invention provides a highly reliable sealing resin composition that provides flame retardancy without using a bromine compound as a flame retardant and has excellent moisture resistance. The purpose is to provide products and semiconductor devices.
［発明の構成］
（課題を解決するための手段）
本発明者は、上記の目的を遠戚しようと鋭意研究を重ね
た結果、難燃剤として後述する特定の有機リン化合物を
配合することによって、難燃性、耐湿性に優れた組成物
が得られることを見いだし、本発明を完成したものであ
る。[Structure of the Invention] (Means for Solving the Problems) As a result of intensive research in an attempt to achieve the above object, the present inventor has achieved the following by incorporating a specific organic phosphorus compound to be described later as a flame retardant. It was discovered that a composition with excellent flame retardancy and moisture resistance can be obtained, and the present invention was completed.
すなわち、本発明は、
（Ａ）エポキシ樹脂、
（Ｂ）ノボラック型フェノール樹脂、
（Ｃ）一般式（Ｉ）で示される有機リン化合物お・・・
（Ｉ）
〈但し、式中Ｒ１は、１価の芳香族基を、Ｒ２は１価の
脂肪族基又はアリールアルキル基を、Ａ「は３価の芳香
族基をそれぞれ表す）
（Ｄ）無機質充填剤
を必須成分とし、樹脂組成物に対して、前記（Ｃ）の有
機リン化合物を０．１〜１０重量％、また前記（Ｄ）の
無機質充填剤を２５〜９０重量％含有してなることを特
徴とする封止用樹脂組成物である。That is, the present invention provides (A) an epoxy resin, (B) a novolac type phenol resin, (C) an organic phosphorus compound represented by the general formula (I)...
(I) (In the formula, R1 represents a monovalent aromatic group, R2 represents a monovalent aliphatic group or arylalkyl group, and A represents a trivalent aromatic group.) (D) Inorganic A filler is an essential component, and the resin composition contains 0.1 to 10% by weight of the organic phosphorus compound (C) and 25 to 90% by weight of the inorganic filler (D). This is a sealing resin composition characterized by the following.
また、その封止用樹脂組成物で半導体素子を封止してな
ることを特徴とする半導体装置である。Further, the present invention is a semiconductor device characterized in that a semiconductor element is sealed with the sealing resin composition.
以下、本発明の詳細な説明する。The present invention will be explained in detail below.
本発明に用いる（Ａ）エポキシ樹脂としては、その分子
中にエポキシ基を少なくとも２個有する化合物である限
り、分子構造、分子量など特に制限はなく、一般に封止
用樹脂として使用されているものは広く包含することが
できる。 例えば、ビスフェノール型等の芳香族系、シ
クロヘキサン誘導体等の指環族系、さらに次の一般式で
示されるエポキシノボラック系等の樹脂が挙げられる。The epoxy resin (A) used in the present invention is not particularly limited in terms of molecular structure and molecular weight as long as it is a compound having at least two epoxy groups in its molecule. Can be broadly encompassed. Examples include aromatic resins such as bisphenol type, ring type resins such as cyclohexane derivatives, and epoxy novolak resins represented by the following general formula.
（但し、式中Ｒ′は水素原子、ハロゲン原子又はアルキ
ル基を、Ｒ２は水素原子又はアルキル基を、ｎは１以上
の整数をそれぞれ表す）
これらのエポキシ樹脂は、単独もしくは２種以上混合し
て使用することができる。(However, in the formula, R' represents a hydrogen atom, a halogen atom, or an alkyl group, R2 represents a hydrogen atom or an alkyl group, and n represents an integer of 1 or more.) These epoxy resins may be used alone or in combination of two or more. can be used.
本発明に用いる（Ｂ）ノボラック型フェノール樹脂とし
ては、フェノール、アルキルフェノール等のフェノール
類とホルムアルデヒドあるいはバラホルムアルデヒドと
を反応させて得られるノボラック型フェノール樹脂、お
よびこれらの変性樹脂、例えばエポキシ化もしくはブチ
ル化ノボラック型フェノール樹脂等が挙げられ、これら
の樹脂は単独もしくは２種以上混合して使用することが
できる。 ノボラック型フェノール樹脂の配合割台は、
前述した（Ａ）エポキシ樹脂のエポキシ基（ａ ）と（
Ｂ）ノボラック型フェノール樹脂のフェノール性水酸基
（ｂ ）との当量比［（ａ＞／（ｂ）］が０．１〜１０
の範囲内にあることが望ましい、 当量比が０．１未満
らしくは１０を超えると、耐湿性、成形作業性および硬
化物の電気特性が悪くなり、いずれの場合も好ましくな
い、 従って、上記の範囲内に限定するのがよい。The novolak phenolic resin (B) used in the present invention includes novolak phenolic resins obtained by reacting phenols such as phenol and alkylphenols with formaldehyde or paraformaldehyde, and modified resins thereof, such as epoxidized or butylated resins. Examples include novolac type phenol resins, and these resins can be used alone or in a mixture of two or more. The novolak type phenolic resin compounding table is
The epoxy groups (a) and (
B) The equivalent ratio [(a>/(b)] of the novolac type phenolic resin to the phenolic hydroxyl group (b) is 0.1 to 10
It is desirable that the equivalent ratio is less than 0.1, and if it exceeds 10, the moisture resistance, molding workability, and electrical properties of the cured product will deteriorate, which is undesirable in either case. It is best to limit it within a range.
本発明に用いる（Ｃ）有機リン化合物は、前記した一般
式を有すればよく、その分子量、分子構造等に特に制限
はなく使用することができる。The organic phosphorus compound (C) used in the present invention has only to have the general formula described above, and can be used without any particular limitations on its molecular weight, molecular structure, etc.
有機リン化合物の配合割合は、樹脂組成物に対して０．
１〜１０重量％含有させる。 その割合が０．１重量％
末溝では難燃性に効果なく、また、１０重量％を超える
と金型汚れ、溶融粘度の増加等、成形性に悪影響を与え
、実用に適さず好ましくない。The blending ratio of the organic phosphorus compound is 0.0% to the resin composition.
The content is 1 to 10% by weight. The proportion is 0.1% by weight
If it is used at the end, it has no effect on flame retardancy, and if it exceeds 10% by weight, it causes mold staining, increases in melt viscosity, and other negative effects on moldability, making it unsuitable for practical use.
この有機リン化合物を配合することによって封止樹脂の
イオン性不純物量が低減されるとともに、はがれ、剥離
がなくなり耐湿性を向上させることができる。By blending this organic phosphorus compound, the amount of ionic impurities in the sealing resin is reduced, and peeling and peeling are eliminated, making it possible to improve moisture resistance.
本発明に用いる（Ｄ＞無機質充填剤としては、シリカ粉
末、アルミナ、三酸化アンチモン、タルク、炭酸カルシ
ウム、チタンホワイト、クレーマイカ、ベンガラ、ガラ
ス繊維、炭素繊維等が挙げられ、これらは単独又は２種
以上混合して使用することができる。 これらの中でも
特にシリカ粉末やアルミナが好ましく使用される。 無
機質充填剤の配合割合は、全体の樹脂組成物に対して２
５〜９０重量％含有させる。 その割合が２５重量％未
溝では耐湿性、１ｌｉｉｔ熱性、機械的特性および成形
性に効果なく、また９０重量％を超えるとカサバリが大
きくなり、成形性が悪く実用に適さず好ましくない。Examples of inorganic fillers used in the present invention (D> A mixture of the above can be used. Among these, silica powder and alumina are particularly preferably used. The blending ratio of the inorganic filler is 2% to the entire resin composition.
The content is 5 to 90% by weight. If the proportion is 25% by weight without grooves, it has no effect on moisture resistance, thermal properties, mechanical properties and moldability, and if it exceeds 90% by weight, the bulk is increased and the moldability is poor, making it unsuitable for practical use.
本発明の封止用樹脂組成物は、エポキシ樹脂、ノボラッ
ク型フェノール樹脂、有機リン化合物および無機質充填
剤を必須成分とするが、本発明の目的に反しない限度に
おいて、また必要に応じて、例えば天然ワックス類、合
成ワックス類、直鎖脂肪酸の金属塩、酸アミド類、エス
テル類、パラフィン類などの離型剤、カーボンブラック
、ベンガラなどの着色剤、種々の硬化促進剤等を適宜添
加配合することができる。The sealing resin composition of the present invention contains an epoxy resin, a novolac type phenol resin, an organic phosphorus compound, and an inorganic filler as essential components, but within the limits that do not contradict the purpose of the present invention and as necessary, e.g. Natural waxes, synthetic waxes, metal salts of linear fatty acids, acid amides, esters, mold release agents such as paraffins, coloring agents such as carbon black and red iron, and various curing accelerators are added and blended as appropriate. be able to.
本発明の封止用樹脂組成物を成形材料として調製する場
合の一般的な方法は、エポキシ樹脂、ノボラック型フェ
ノール樹脂、有機リン化合物、無機質充填剤、その他を
所定の組成比に選択し、その原料組成分をミキサー等に
よって十分均一に混合した後、更に熱ロールによる溶融
混合処理又はニーダ等による混合処理を行い、冷却固化
させ適当な大きさに粉砕して成形材料とする。A general method for preparing the encapsulating resin composition of the present invention as a molding material is to select a predetermined composition ratio of an epoxy resin, a novolac type phenolic resin, an organic phosphorus compound, an inorganic filler, and others. After the raw material components are sufficiently uniformly mixed using a mixer or the like, they are further melt-mixed using hot rolls or mixed using a kneader, etc., cooled and solidified, and pulverized to an appropriate size to form a molding material.
本発明の半導体装置は、上記のようにして得られた封止
用樹脂組成物を用いて半導体素子を封止することによっ
て容易に製造することができる。The semiconductor device of the present invention can be easily manufactured by encapsulating a semiconductor element using the encapsulating resin composition obtained as described above.
封止の最も一般的な方法としては、低圧トランスファー
成形法があるが、射出成形、圧綿成形、注型等による封
止も可能である。 封止用樹脂組成物は封止め際に加熱
して硬化させ、最終的には、組成物の硬化物によって封
止された半導体装置が得られる。 加熱による硬化は１
５０℃以上加熱して硬化させることが望ましい、 封止
される半導体素子としては、ＩＣ，ＬＳＩ、トランジス
タ、サイリスタ、ダイオード等で特に限定されるもので
はない。The most common method for sealing is low-pressure transfer molding, but sealing by injection molding, compressing, casting, etc. is also possible. The sealing resin composition is heated and cured during sealing, and a semiconductor device sealed with a cured product of the composition is finally obtained. Curing by heating is 1
It is desirable that the semiconductor element be cured by heating at 50° C. or more. The semiconductor element to be encapsulated is not particularly limited, and may be an IC, an LSI, a transistor, a thyristor, a diode, or the like.
本発明の封止用樹脂組成物は、半導体素子以外の電子部
品或いは電気部品の封止、被覆、絶縁等に適用すること
が可能で、優れた特性と信頼性を付与させることができ
る。The encapsulating resin composition of the present invention can be applied to encapsulating, covering, insulating, etc. electronic components or electrical components other than semiconductor devices, and can impart excellent characteristics and reliability.
（実施例）
次に、本発明を実施例によって具体的に説明するが、本
発明は以下の実施例に限定されるものではない、 以下
の実施例および比較例において１％」とは「重量％」を
意味する。(Example) Next, the present invention will be specifically explained with examples, but the present invention is not limited to the following examples. In the following examples and comparative examples, 1% means ``weight %” means.
実施例
クレゾールノボラックエポキシ樹脂〈エポキシ当量２１
５） １５％、ノボラックフェノール樹脂〈フェノール
当量１（１７） ７％、有機リン化合物３％、溶融シ
リカ７０％、その他の成分３％を常温で混合し、さらに
９０〜９５℃で混練して冷却した後、粉砕して成形材料
（Ａ）を製造した。Example Cresol novolak epoxy resin <Epoxy equivalent weight 21
5) Mix 15%, novolac phenol resin (phenol equivalent: 1 (17) 7%, organic phosphorus compound 3%, fused silica 70%, and 3% other components at room temperature, then knead at 90-95°C and cool. After that, it was pulverized to produce a molding material (A).
比較例
クレゾールノボラックエポキシ樹脂（エポキシ当量２１
５） １２％、臭素化エポキシ樹脂（エポキシ当量２８
５） ３％、ノボラックフェノール樹脂〈フェノール
当量１０７） ７％、溶融シリカ６８％、二酸化アン
チモン２％、その他の成分３％を実施例と同様にして成
形材料（Ｂ）を製造した。Comparative example Cresol novolac epoxy resin (epoxy equivalent: 21
5) 12%, brominated epoxy resin (epoxy equivalent weight 28
5) A molding material (B) was produced in the same manner as in the example using 3%, novolac phenol resin (phenol equivalent: 107), 7%, fused silica 68%, antimony dioxide 2%, and other components 3%.
実施例および比較例で製造した成形材料（Ａ）、（Ｂ）
を用いて、１１０℃に加熱した金型内に半導体素子をセ
ットし、トランスファー注入して硬化させ、半導体装置
を製造した。 この装置等について諸試験を行い、結果
を得たので第１表に示したが本発明の効果が確認された
。 諸試験は次ようにして行った。Molding materials (A) and (B) produced in Examples and Comparative Examples
A semiconductor device was manufactured by setting a semiconductor element in a mold heated to 110° C. and hardening it by transfer injection. Various tests were conducted on this device, and the results are shown in Table 1, and the effects of the present invention were confirmed. The tests were conducted as follows.
吸水率は、成形材料を用いて直径５０１ｍ厚さ３１の成
形品をトランスファー成形によってつくり、これを１２
７℃、２．５気圧の飽和水蒸気中に２４時間放置し、増
加した重量によって求めた。 ガラス転移温度は、吸水
率の試験と同様な成形品をつくり、これを１７５℃で８
時間の条件で後硬化を行い、適当な大きさのテストピー
スとして熱機器分析装置を用いて測定した。ｉ！燃性は
、成形材料を用いトランスファー成形によって１２７ｘ
１２．７ｘ Ｏ，８ａｌｌの成形品をつくり、ＵＬ法
を用いて測定した。The water absorption rate was determined by using a molding material to make a molded product with a diameter of 501 m and a thickness of 31 cm, and
The weight was determined by the increase in weight after being left in saturated steam at 7° C. and 2.5 atm for 24 hours. To determine the glass transition temperature, a molded product similar to that used in the water absorption test was made, and this was heated at 175°C to 8°C.
Post-curing was carried out under conditions of a certain time, and measurements were made using a thermal instrument analyzer as a test piece of an appropriate size. i! Flammability is 127x by transfer molding using molding material.
A molded article of 12.7x O, 8all was made and measured using the UL method.
耐湿性は、２本以上のアルミニウム配線を有するシリコ
ン製チップ（テストチップ）を通常の４２アロイフレー
ムに接着し、１７５℃で２分間の条件でトランスファー
成形してＤＩＲ−１６ｐｉｎをつくった。 これを１７
５℃で８時間の条件で後硬化させ、次いで１２７℃、２
．５気圧の水蒸気中で耐湿性試験を行い、アルミニウム
配線の腐食による断線を生じたものを不良として評価し
た。For moisture resistance, a silicon chip (test chip) having two or more aluminum wirings was bonded to a normal 42 alloy frame and transfer molded at 175° C. for 2 minutes to create DIR-16pin. This is 17
Post-cure at 5°C for 8 hours, then at 127°C for 2 hours.
．． A moisture resistance test was conducted in water vapor at 5 atmospheres, and those in which wire breakage occurred due to corrosion of the aluminum wiring were evaluated as defective.
第
表
（単位）
［発明の効果］
以上の説明および第１表から明らかなように、本発明の
封止用樹脂組成物は臭素化合物を含有しないにもかかわ
らす難燃性を有するとともに、耐湿性にも優れており、
この組成物を用いることによって信頼性の高い半導体装
置あるいは電子・電気部品等を得ることができる。Table (Units) [Effects of the Invention] As is clear from the above explanation and Table 1, the sealing resin composition of the present invention has flame retardancy and moisture resistance even though it does not contain a bromine compound. It also has excellent sex,
By using this composition, highly reliable semiconductor devices, electronic/electrical parts, etc. can be obtained.
Claims (1)
価の脂肪族基又はアリールアル キル基を、Ａｒは３価の芳香族基をそれ ぞれ表す）。 （Ｄ）無機質充填剤 を必須成分とし、樹脂組成物に対して、前記（Ｃ）の有
機リン化合物を０．１〜１０重量％、また前記（Ｄ）の
無機質充填剤を２５〜９０重量％含有してなることを特
徴とする封止用樹脂組成物。 ２（Ａ）エポキシ樹脂、 （Ｂ）ノボラック型フェノール樹脂、 （Ｃ）一般式（ I ）で示される有機リン化 合物および ▲数式、化学式、表等があります▼・・・（ I ） （但し、式中Ｒ＾１は、１価の芳香族基を、Ｒ＾２は１
価の脂肪族基又はアリールアル キル基を、Ａｒは３価の芳香族基をそれ ぞれ表す） （Ｄ）無機質充填剤 を必須成分とし、樹脂組成物に対して、前記（Ｃ）の有
機リン化合物を０．１〜１０重量％、また前記（Ｄ）の
無機質充填剤を２５〜９０重量％含有する封止用樹脂組
成物で、半導体素子を封止してなることを特徴とする半
導体装置。[Scope of Claims] 1 (A) Epoxy resin, (B) Novolac type phenol resin, (C) Organic phosphorus compound represented by general formula (I), and ▲Mathematical formula, chemical formula, table, etc.▼...( I) (However, in the formula, R^1 represents a monovalent aromatic group, and R^2 represents 1
Ar represents a trivalent aliphatic group or an arylalkyl group, and Ar represents a trivalent aromatic group, respectively). (D) An inorganic filler is an essential component, and the organic phosphorus compound (C) is 0.1 to 10% by weight, and the inorganic filler (D) is 25 to 90% by weight based on the resin composition. A sealing resin composition comprising: 2 (A) Epoxy resin, (B) Novolac type phenolic resin, (C) Organic phosphorus compound represented by the general formula (I) and ▲Mathematical formulas, chemical formulas, tables, etc.▼...(I) (However, the formula In the middle R^1 is a monovalent aromatic group, R^2 is 1
Ar represents a trivalent aliphatic group or arylalkyl group, and Ar represents a trivalent aromatic group.) (D) An inorganic filler is an essential component, and the organic phosphorus compound of (C) is added to the resin composition. A semiconductor device characterized in that a semiconductor element is sealed with a sealing resin composition containing 0.1 to 10% by weight and 25 to 90% by weight of the inorganic filler (D).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31493589A JPH03177451A (en) | 1989-12-04 | 1989-12-04 | Sealing resin composition and semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP31493589A JPH03177451A (en) | 1989-12-04 | 1989-12-04 | Sealing resin composition and semiconductor device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH03177451A true JPH03177451A (en) | 1991-08-01 |
Family
ID=18059422
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP31493589A Pending JPH03177451A (en) | 1989-12-04 | 1989-12-04 | Sealing resin composition and semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH03177451A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000080251A (en) * | 1998-09-03 | 2000-03-21 | Matsushita Electric Works Ltd | Phosphorus-modified flame-retardant epoxy resin composition and its production and molded product and laminate using the phosphorus-modified flame-retardant epoxy resin composition |
| WO2001042359A1 (en) * | 1999-12-13 | 2001-06-14 | Dow Global Technologies Inc. | Flame retardant phosphorus element-containing epoxy resin compositions |
| JP2002265562A (en) * | 2001-03-08 | 2002-09-18 | Japan Epoxy Resin Kk | Phosphorus-containing epoxy resin and flame-retardant resin composition |
-
1989
- 1989-12-04 JP JP31493589A patent/JPH03177451A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000080251A (en) * | 1998-09-03 | 2000-03-21 | Matsushita Electric Works Ltd | Phosphorus-modified flame-retardant epoxy resin composition and its production and molded product and laminate using the phosphorus-modified flame-retardant epoxy resin composition |
| WO2001042359A1 (en) * | 1999-12-13 | 2001-06-14 | Dow Global Technologies Inc. | Flame retardant phosphorus element-containing epoxy resin compositions |
| JP2003516455A (en) * | 1999-12-13 | 2003-05-13 | ダウ グローバル テクノロジーズ インコーポレイティド | Flame retardant phosphorus element-containing epoxy resin composition |
| JP2002265562A (en) * | 2001-03-08 | 2002-09-18 | Japan Epoxy Resin Kk | Phosphorus-containing epoxy resin and flame-retardant resin composition |
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