JPH11339898A - High frequency input and output terminal, and package for high frequency circuit - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a package for a high frequency circuit preventing deterioration of reflection characteristics to a high frequency signal and having excellent transmission characteristics, in a high frequency package equipped with a high frequency input and output part having a hermetic sealing part, transmitting a high frequency signal by connecting a micro-strip line and a strip line. SOLUTION: This high frequency input and output terminal consists of a dielectric substrate 11 having a lower grounding conductor 12 on its lower surface and a line conductor 13 on its upper surface, and a dielectric wall member 14 jointed to its upper surface while sandwiching the line conductor 13 and having an upper grounding conductor 15 on its upper surface, and the line width of a part 13b sandwiched between the dielectric substrate 11 of the line conductor 13 and the dielectric wall member 14 is gradually narrowed as it goes to its center part from both ends and is made minimum at the center. Since the line width of a hermetic sealing part has no suddenly changed discontinuous part, reflection characteristic is not deteriorated even at a high frequency.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a high-frequency input / output terminal used for a high-frequency input / output unit of a high-frequency circuit package and a high-frequency circuit package using the same.

[0002]

2. Description of the Related Art In a signal input / output section of a high-frequency circuit package for hermetically sealing and housing high-frequency circuit components such as a high-frequency semiconductor element or a high-frequency circuit module operated at a high frequency such as a microwave band or a millimeter wave band. Conventionally, a microstrip line formed on a dielectric substrate as a high-frequency transmission line, and a strip line of a hermetic seal portion (hermetic sealing portion) formed by joining a dielectric wall member on the dielectric substrate. Is generally used, and a high-frequency circuit component, which is hermetically sealed and housed inside a package, is connected to an external electric circuit via a high-frequency input / output terminal having such a structure.

FIG. 14 is a perspective view showing an example of a high-frequency input / output terminal having a structure in which such a conventional microstrip line and strip line are connected.

In FIG. 14, reference numeral 1 denotes a dielectric substrate, 2 denotes a lower ground conductor formed on the lower surface of the dielectric substrate, 3 denotes a line conductor formed on the upper surface of the dielectric substrate 1 and 4 denotes a dielectric substrate. A dielectric wall member 5 joined to the upper surface with a part of the line conductor 3 sandwiched therebetween is an upper ground conductor formed on the upper surface of the dielectric wall member 4. A hermetic seal portion is formed by a joint portion between the dielectric substrate 1 and the dielectric wall member 4. The line conductors 3 before and after the hermetic seal portion become microstrip lines 3a, and the line conductors 3 of the hermetic seal portion are formed. Becomes the strip line 3b. The line conductor 3
The portion sandwiched between the dielectric substrate 1 and the dielectric wall member 4 is indicated by a broken line.

In this conventional high frequency input / output terminal, a microstrip line 3a and a strip line 3b
In order to match the characteristic impedance of the line conductor 3 with the presence or absence of the dielectric wall member 4 on the line conductor 3,
As shown in the top view of FIG. 15 excluding the dielectric wall member 4, the line width of the strip line 3b is made smaller than the line width of the microstrip line 3a, and the line width is sharply tapered at the connection between them. It is connected by changing. In FIG. 15, a region on the dielectric substrate 1 separated by a broken line indicates a hermetic seal portion to which the dielectric wall member 4 is joined.

The high frequency input / output terminal having such a structure is used as a signal input / output portion of a high frequency circuit package, for example, by cutting a metal frame forming a metal base and a container wall to form a mounting portion for the high frequency input / output terminal. A package of a so-called metal wall type in which a high-frequency input / output terminal is fitted to this mounting portion, or a dielectric frame forming a dielectric substrate and a container wall is cut out to mount the high-frequency input / output terminal. And a package having a so-called ceramic wall type configuration in which a high frequency input / output terminal is fitted to the mounting portion, or a package having a high frequency input / output terminal similarly fitted to a dielectric substrate and a metal frame. It is used as a package or the like having a structure in which the high-frequency input / output terminals having the above-described structure are formed on a dielectric substrate and a dielectric frame.

[0007]

However, in the conventional high-frequency input / output terminals, when looking at the line conductor 3 for transmitting a high-frequency signal, the microstrip line 3
a ~ Strip line with taper ~ Strip line 3b ~
Since it has a structure such as a strip line with an inverse taper to a microstrip line 3a, and particularly in a connection portion between the microstrip line 3a and the strip line 3b, the line width rapidly and discontinuously changes.
As the frequency becomes higher, there is a problem that the reflection characteristic of the high-frequency signal is deteriorated due to the line width converter.

SUMMARY OF THE INVENTION The present invention has been made in view of the above problems, and has as its object to connect a microstrip line and a stripline to transmit a high frequency signal and to provide a high frequency having a hermetic seal portion of a package. An object of the present invention is to provide a high-frequency input / output terminal having excellent transmission characteristics, which prevents deterioration of reflection characteristics for high-frequency signals.

Another object of the present invention is to provide a high-frequency circuit package having a high-frequency input / output section having a hermetic seal for connecting a microstrip line and a strip line to transmit a high-frequency signal. An object of the present invention is to provide a high-frequency circuit package having excellent transmission characteristics in which deterioration of reflection characteristics is prevented.

[0010]

A first high frequency input / output terminal according to the present invention comprises a dielectric substrate having a lower ground conductor on the lower surface and a line conductor on the upper surface, and the line conductor on the upper surface of the dielectric substrate. And a dielectric wall member having an upper ground conductor on an upper surface thereof, and a line width of a portion of the line conductor sandwiched between the dielectric substrate and the dielectric wall member is set at both ends. From the center to the center.

A second high frequency input / output terminal according to the present invention includes a dielectric substrate having a lower ground conductor on a lower surface and a line conductor on an upper surface, and a part of the line conductor on an upper surface of the dielectric substrate. And a dielectric wall member having an upper ground conductor on the upper surface, and a line width of a portion of the line conductor sandwiched between the dielectric substrate and the dielectric wall member is measured from both ends to the center. In addition, each side of the line conductor is narrowed as a continuous curve shape in which the change of the inclination of the tangent is continuous.

A first high-frequency circuit package according to the present invention comprises: a substrate having a mounting portion for mounting a high-frequency semiconductor element on an upper surface; and a frame joined to the substrate so as to surround the mounting portion. An input / output terminal mounting portion formed by cutting out the frame body and having a conductive bottom surface, and the first high-frequency input / output terminal or the second high-frequency input / output terminal of the above-mentioned configuration fitted to the input / output terminal mounting portion. And a high frequency input / output terminal.

A second high-frequency circuit package according to the present invention has a lower ground conductor on a lower surface, a mounting portion for mounting a high-frequency circuit component on an upper surface, and a line conductor formed from the vicinity of the mounting portion to the vicinity of the outer periphery. And a dielectric frame having an upper ground conductor on the upper surface and joined to surround the mounting portion while sandwiching a part of the line conductor on the upper surface of the dielectric substrate. The line width of a portion of the line conductor sandwiched between the dielectric substrate and the dielectric frame is gradually reduced from both ends to the center.

A third high-frequency circuit package according to the present invention has a lower ground conductor on a lower surface, a mounting portion for mounting high-frequency circuit components on an upper surface, and a line conductor formed from the vicinity of the mounting portion to the vicinity of the outer periphery. And a dielectric frame having an upper ground conductor on the upper surface and joined to surround the mounting portion while sandwiching a part of the line conductor on the upper surface of the dielectric substrate. The line width of the portion of the line conductor sandwiched between the dielectric substrate and the dielectric frame is reduced from both ends to the center, and each side of the line conductor is narrowed as a continuous curve shape in which the change in the slope of the tangent is continuous. It is characterized by having.

[0015]

DESCRIPTION OF THE PREFERRED EMBODIMENTS The present invention will be described below with reference to the drawings. FIGS. 1 and 2 show an embodiment of the first high frequency input / output terminal of the present invention. FIG.
FIG. 2 is a top view similar to FIG. 15, and FIG.

In these figures, reference numeral 11 denotes a dielectric substrate;
Is a lower ground conductor formed on the lower surface of the dielectric substrate, 13 is a line conductor formed on the upper surface of the dielectric substrate 11, and 14 is joined to the upper surface of the dielectric substrate 11 by sandwiching a part of the line conductor 13. The dielectric wall member 15 is an upper ground conductor formed on the upper surface of the dielectric wall member 14. Dielectric substrate 11 and dielectric wall member 14
Hermetic seal part is configured at the joint with
The line conductors 13 before and after the hermetic seal portion become microstrip lines 13a, and the line conductor 13 at a portion sandwiched between the dielectric substrate 11 and the dielectric wall member 14 in the hermetic seal portion becomes a strip line 13b.

Dielectric substrate 11 of line conductor 13 and dielectric wall member
14, the line width of the hermetic seal portion sandwiched between the two, that is, the line width of the strip line 13b is a microstrip line at both ends of the hermetic seal portion.
13a is equal to the line width of the microstrip line 13
a, and continuously changed from both ends of the hermetic seal portion to the central portion to be gradually narrowed,
It is minimized at its center. Accordingly, the portion of the strip line 13b in the high frequency input / output terminal of the present invention is:
Strip line 3b in conventional high frequency input / output terminal
Does not have a constant line width portion, and the line width changes continuously.

According to such a high frequency input / output terminal of the present invention, the conventional line conductor is provided at the portion of the line conductor 13 sandwiched between the dielectric substrate 11 and the dielectric wall member 14, ie, at the strip line 13b. Since the line conductor 13 does not have an abrupt discontinuity in the line width as shown in FIG. 3, even for a high-frequency signal of a high frequency, the reflection characteristics do not deteriorate due to a sudden change in the line width. This is a high frequency input / output terminal having transmission characteristics. In addition, the line conductor 13 (strip line 13b) in the hermetic seal portion generally has an electrical property that the longer the line length of the portion where the line width changes, the smaller the reflection coefficient as a whole becomes. Thereby, the reflection characteristics can be improved.

In the first high frequency input / output terminal of the present invention, the line width of the strip line 13b is gradually narrowed as shown in FIG. 1 and FIG. In addition, the shape may be changed sinusoidally from both ends to the center, or may be changed exponentially, or may change as a curve shape represented by a function that changes continuously and monotonically. May be. In any case, there is no abrupt change in the line width unlike the conventional connection between the microstrip line 3a and the strip line 3b, and good transmission is performed without deteriorating the reflection characteristics of the high-frequency signal. Can be.

Here, when transmission lines having different characteristic impedances are connected by tapered transmission lines, generally, the longer the taper length is, the greater the absolute value of the reflection coefficient viewed from the input end becomes, regardless of the values of both characteristic impedances. And the absolute value of the reflection coefficient as seen from the input end can be reduced by using a curve represented by a function having an appropriate rate of change when the taper length is fixed. Track 13b
When the taper shape is determined in advance when the line width is changed linearly, the absolute value of the reflection coefficient can be reduced by appropriately selecting the line width that is minimized at the center of the strip line 3b. can do. On the other hand, as a reverse case, when the line width minimized at the center of the strip line 3b is predetermined, the absolute value of the reflection coefficient is similarly reduced by appropriately selecting a function representing the tapered shape. can do.

As described above, since the degree of freedom in designing the strip line 13b is increased, the length of the high-frequency input / output terminal in the transmission direction must be fixed in advance, and the length of the high-frequency input / output terminal is limited due to restrictions on manufacturing accuracy and the like. Even when the line width of the transmission line is limited, a high-frequency input / output terminal having good reflection characteristics can be configured.

The line width minimized at the center of the strip line 13b may be appropriately set as described above. In particular, the portion of the microstrip line 13a is considered in consideration of the characteristic impedance of the line conductor 13. In order to obtain good transmission characteristics by matching with the above, the strip line 3b having a straight line portion of the conventional structure is set to be substantially equal to the line width for matching the characteristic impedance. Is preferred.

FIGS. 3 and 4 show an embodiment of the second high frequency input / output terminal of the present invention. FIG. 3 is a perspective view similar to FIG. 1, and FIG. FIG. 2 is a top view similar to FIG.

In these figures, 11 'is a dielectric substrate,
12 'is a lower ground conductor formed on the lower surface of the dielectric substrate, 1
3 'is a line conductor formed on the upper surface of the dielectric substrate 11', 1
4 'is a dielectric wall member joined to the upper surface of the dielectric substrate 11' by sandwiching a part of the line conductor 13 ', and 15' is a dielectric wall member 1.
This is the upper ground conductor formed on the upper surface of 4 '. A hermetic seal portion is formed by a joint between the dielectric substrate 11 'and the dielectric wall member 14', and the line conductors 13 'before and after the hermetic seal portion are formed into microstrip lines 13'.
a ', the dielectric substrate at the hermetic seal
Line conductor at the portion sandwiched between 11 'and dielectric wall member 14'
13 'becomes the strip line 13b'.

Also in this second high frequency input / output terminal, the line width of the strip line 13b 'is a microstrip line at both ends of the hermetic seal portion.
Microstrip line equal to the line width of 13a '
In the tapered portion, each side of the line conductor 13 ′ is narrowed as a continuous curve with a tangent having a continuous change in inclination. That is, this change in line width is
Expressed as a curve in which the slope of the tangent to the side of the line conductor 13 'is continuous over the entire strip line 13b', that is, a function in which the first-order derivative is continuous over the section where the curve changes. At the end of the line width change at both ends of the strip line 13b ', the tangent to that side is common to the tangent to the side of the microstrip line 13a'. It has a structure. Therefore, the strip line 13b 'in the high frequency input / output terminal of the present invention.
Has a constant line width portion like the strip line 3b in the conventional high frequency input / output terminal, the line width is continuously changing, and the sudden and discontinuous change is There is nothing.

According to the second high frequency input / output terminal of the present invention, the discontinuous portion of the line conductor 13 'having a sharp line width like the conventional line conductor 3 is formed in the strip line 13b'. Since it does not have this, even for a high-frequency signal of a high frequency, the reflection characteristics do not deteriorate due to a sudden change in the line width, and the high-frequency input / output terminal has good transmission characteristics.

Further, the line conductor 13 '(strip line 13b') in the hermetic seal portion generally has an electrical property that the longer the line length of the portion where the line width changes, the smaller the overall reflection coefficient becomes. Therefore, the longer the section where the line width changes, the more the reflection characteristics can be improved.

In the second high-frequency input / output terminal of the present invention, the line width of the strip line 13b 'is narrowed, and the tangential slope changes continuously as shown in FIGS. 3 and 4. In addition to the curved shape which is sinusoidally changed, the curved shape may have an inflection point in a changing section and have a tangent line common to the microstrip line 13a 'at both ends of the section. Or a microstrip line 13 at one end of the section, such as a curved shape having a common tangent at the point where two quadratic functions are connected.
A curve having a common tangent to the side of a 'and having no inflection point in the section may have a curved shape in which the tangents are connected so as to be common at the connecting points. In any case, there is no abrupt and discontinuous change in the line width as in the conventional connection between the microstrip line 3a and the strip line 3b, and good transmission without deteriorating the reflection characteristics of the high-frequency signal. Can be performed.

Here, also in the second high frequency input / output terminal of the present invention, when a tapered curve shape is determined in advance so that the line width of the strip line 13b 'is changed substantially linearly, The absolute value of the reflection coefficient can be reduced by appropriately selecting the line width minimized at the center of the strip line 3b. On the other hand, as a reverse case, when the minimum line width at the center of the strip line 3b is predetermined,
The absolute value of the reflection coefficient can be similarly reduced by appropriately selecting a function representing a tapered curve shape or a sinusoidal curve shape.

As described above, since the degree of freedom in designing the strip line 13b 'is increased, the length of the high-frequency input / output terminal in the transmission direction must be fixed in advance, and there are restrictions on the manufacturing accuracy and the like. Accordingly, even when the line width of the transmission line is restricted, a high-frequency input / output terminal having good reflection characteristics can be configured.

The line width to be minimized at the center of the strip line 13b 'may be appropriately set as described above. In particular, the microstrip line 13a' is considered in consideration of the characteristic impedance of the line conductor 13 '. In order to obtain good transmission characteristics by matching with the portion ', the strip width is approximately equal to the line width for matching the characteristic impedance in the case of the strip line 3b having the straight line portion of the conventional structure. It is preferable to set

In the high frequency input / output terminal of the present invention, the dielectric substrates 11 and 11 'and the dielectric wall members 14 and 14' are made of, for example, a ceramic material such as alumina or mullite.
Inorganic materials such as glass ceramics, or organic resin materials such as Teflon (PTFE), glass epoxy, and polyimide are used.

The thickness and width of these dielectric substrates 11 and 11 ', and the height and width of the dielectric wall members 14 and 14' and the line conductors 13 and 1 '
The wall thickness of the portion sandwiching 3 ′ is appropriately set according to the characteristics required at the frequency of the used high-frequency signal to be transmitted.

The lower ground conductors 12 and 12 'and the line conductors 13 and 1
3 ′, the upper ground conductors 15 and 15 ′ are made of a metal material for a high-frequency line conductor, for example, Cu, MoMn + Ni + Au, W + Ni
+ Au, Cr + Cu, Cr + Cu + Ni + Au, Ta ₂
N + NiCr + Au, Ti + Pd + Au, NiCr + P
It is formed by a thick film printing method, a metallization method, various thin film forming methods, a plating method, or the like using d + Au or the like, and has a thickness and a width, for example, a line of the microstrip lines 13a and 13a 'of the line conductors 13 and 13'. The width and the minimum line width of the strip lines 13b and 13b 'are appropriately set in consideration of the frequency of the high-frequency signal to be used, characteristic impedance matching, and the like.

The lower grounding conductors 12 and 12 ′ are
In addition to those formed as conductor layers on the lower surface of 11 ',
A conductive substrate may be joined via a metallized metal layer or the like. When formed as a conductor layer, it is usually formed on substantially the entire lower surface of the dielectric substrate 11, 11 ', and has a thickness of, for example, about 20 μm for a thick film and about 5 μm for a thin film. Is set to This is the same for the upper ground conductors 15 and 15 '.

In the high frequency input / output terminal of the present invention, side grounding conductors may be further provided on the side surfaces of the dielectric substrates 11 and 11 'and the dielectric wall member. It becomes ideal ground (potential 0), and a shield for high-frequency signals can be formed for the strip line portions 13b and 13b '.

Next, a first high-frequency circuit package of the present invention will be described with reference to the drawings. FIG. 5 is a perspective view showing an example of an embodiment of the first high-frequency circuit package according to the present invention.

In FIG. 5, reference numeral 21 denotes a substrate made of a dielectric or a conductor, and a mounting portion 21a for mounting a high-frequency circuit component (not shown) such as a high-frequency semiconductor element or a high-frequency circuit module is provided on the upper surface thereof. Have. In this example, the mounting portion 21a is formed in a concave shape, but may be formed on the substrate 21 as a flat surface.

Reference numeral 22 denotes a frame joined to the substrate 21 so as to surround the mounting portion 21a, and is made of a dielectric or a conductor similarly to the substrate 21.

The frame 23 is formed by cutting out the frame 22.
This is an input / output terminal mounting portion whose bottom surface is made conductive. In this example, a similar notch is provided in the substrate 21 to form the input / output terminal mounting portion 23. The bottom surface of the input / output terminal mounting portion 23 is conductive when the substrate 21 and the frame 22 are made of a conductive material, but is formed by applying a conductive layer when the substrate 21 and the frame 22 are made of a dielectric material. To make it conductive. This bottom surface is grounded via the substrate 21 and the frame 22 or a ground conductor layer (not shown) formed on the substrate 21 and the frame 22.

Reference numeral 24 denotes a high frequency input / output terminal according to the present invention having the above-mentioned structure fitted to the input / output terminal mounting portion 23; 25, a dielectric substrate; and 26, a lower ground on the lower surface of the dielectric substrate 25. A conductor, 27 is a line conductor formed on the upper surface of the dielectric substrate 25, 28 is a dielectric wall member joined to the upper surface of the dielectric substrate 25 by sandwiching a part of the line conductor 27, 29 is a dielectric wall member 28 is an upper ground conductor formed on the upper surface of 28. The lower ground conductor 26 is connected to the conductive bottom surface of the input / output terminal mounting portion 23 and grounded, and the upper ground conductor 29 is a ground conductor layer on the upper surface of the frame 22 or the metal frame 22 or the frame. It is connected to a lid attached to the upper surface of the body 22 and is grounded.

According to the first high-frequency circuit package of the present invention, the first or second high-frequency input / output terminal 24 of the present invention having the above configuration is provided as the structure of the high-frequency input / output terminal section. As a result, similarly to the above, a high-frequency circuit package having good transmission characteristics without deteriorating the reflection characteristics even for a high-frequency high-frequency signal.

In FIG. 5, a high frequency input / output terminal is shown.
Although the example using the first high-frequency input / output terminal of the present invention is shown as 24, it goes without saying that the same applies when the second high-frequency input / output terminal is used.

The line conductor 27 is connected to the connection electrode of the high-frequency circuit component mounted on the mounting portion 21a and the wiring conductor of the external electric circuit via a wire, a ribbon, or the like to connect the high-frequency circuit component inside the package to the external electric circuit. Are electrically connected to each other, and an Fe—Ni—Co alloy or Fe—N
A lid made of a Fe-Ni alloy such as i42 alloy, oxygen-free copper, aluminum, stainless steel, Cu-W alloy, Cu-Mo alloy, etc. is soldered, a high melting point metal brazing such as AuSn brazing or AuGe brazing, seam welding (welding) ), The high-frequency circuit components are hermetically sealed and accommodated in the package, thereby providing a high-frequency device as a product.

The substrate 21 and the frame 22 are made of the same dielectric material as the dielectric substrate 25 of the high frequency input / output terminal 24 or the same metal as the above-mentioned frame 22, depending on the specifications of the package.
If it is made of a dielectric material, at least the input / output terminal mounting part 23
Is made conductive.

The substrate 21 and the frame 22 are made of AgCu solder.
It is joined by high melting point metal brazing such as AuSn brazing or AuGe brazing. Further, the high frequency input / output terminal 24 and the input / output terminal mounting portion 23 are fitted and joined by the same high melting point metal brazing.

In this embodiment, the upper surface of the dielectric wall member 28 of the high frequency input / output terminal 24 is made to be flush with the upper surface of the frame 22, but in this case, the upper surface of the lid ( (Not shown) directly or via a frame-shaped metal seal or the like, the high-frequency circuit components mounted on the mounting portion 21a can be easily hermetically sealed and accommodated therein. When the upper surface of the dielectric wall member 28 and the upper surface of the frame body 22 are not flush with each other, the high-frequency circuit component can be similarly formed by a lid shaped to fill the step or through a metal seal. It can be hermetically sealed inside.

In this embodiment, one high frequency input / output terminal 24 is attached to each side of the substrate 21. However, if necessary, a plurality of terminals may be attached to other positions or to one side. In this case, a plurality of input / output terminal mounting portions 23 may be provided, and a plurality of high frequency input / output terminals 24 may be mounted in parallel.

Further, side grounding conductors may be provided on the side surfaces of the dielectric substrate 25 and the dielectric wall member 28 of the high frequency input / output terminal 24. In this case, each grounding conductor is ideally grounded (potential 0). ) And the line conductor 27 of the hermetic seal part
Can form a shield against high frequency signals.

The lower ground conductor 26 and the upper ground conductor 29
In addition to forming the side ground conductor as a metal conductor coating layer, by arranging a large number of through conductors or connecting them, the side grounding conductor may function as a substantially continuous ground layer similarly to the coating layer. Alternatively, it may be formed by attaching a metal plate or a metal block.

FIG. 6 is a perspective view showing an example of an embodiment of a second high-frequency circuit package according to the present invention.

In FIG. 6, reference numeral 31 denotes a dielectric substrate, which is made of the same material as the above-described dielectric substrate 25, and has a mounting portion 31 for mounting a high-frequency circuit component (not shown) on its upper surface.
a. In this embodiment, the mounting portion 31a is formed in a flat surface, but may be formed in a concave shape. 33 is a line conductor formed from the vicinity of the mounting portion 31a on the upper surface of the dielectric substrate 31 to the vicinity of the outer periphery, and 34 is a line conductor formed on the upper surface of the dielectric substrate 31.
A dielectric frame body sandwiching a part of 33 and surrounding the mounting portion 31a, 35 is an upper ground conductor formed on the upper surface of the dielectric frame 34, and 32 is at least the same figure as the dielectric substrate 31. The lower ground conductor is provided on the lower surface of the dielectric substrate 31 constituting the high frequency input / output terminal portion 36 shown by a two-dot chain line so as to face the line conductor 33.

The line width of the portion of the line conductor 33 sandwiched between the dielectric substrate 31 and the dielectric frame 34, ie, the portion forming the hermetic seal portion, is equal to the width of the line conductor 33 at both ends of the hermetic seal portion. It is made equal to the line width of the microstrip line portion and connected to the microstrip line portion, it is continuously changed from both ends of the hermetic seal portion to the center portion, gradually narrowed, and minimized at the center portion. I have. Accordingly, the high frequency input / output terminal of the second high frequency circuit package of the present invention.
The strip line portion of the line conductor 33 in 36 does not have a fixed line width portion like the strip line 3b in the conventional high frequency input / output terminal, and the line width is continuously changed. It is said that rapid and discontinuous changes have been eliminated.

With such a configuration, the high frequency input / output terminal portion 36 composed of the dielectric substrate 31, the lower ground conductor 32, the line conductor 33, the dielectric frame 34, and the upper ground conductor 35 is integrally formed. A second high-frequency circuit package according to the present invention is configured.

According to the second high-frequency circuit package of the present invention having the above-described structure, the high-frequency input / output terminal 36, which is the input / output terminal for the high-frequency signal, starts from the vicinity of the mounting portion 31a on the upper surface of the dielectric substrate 31. The line conductor 33 formed around the outer periphery, a part of which is sandwiched between the dielectric substrate 31 and the dielectric frame 32, the line width is gradually narrowed from both ends in the sandwiched portion, and the line width is minimized at the center. As a result, a high-frequency circuit package having good transmission characteristics without deterioration of the reflection characteristics even for a high-frequency signal of a high frequency as described above.

The line conductor 33 is connected to the connection electrode of the high-frequency circuit component mounted on the mounting portion 31a and the wiring conductor of the external electric circuit via a wire, a ribbon, or the like to connect the high-frequency circuit component inside the package to the external electric circuit. The high-frequency circuit components are hermetically sealed and housed inside the package by attaching the lid made of the above-mentioned material to the upper surface of the dielectric frame 32 by the above-mentioned attaching method. It becomes a high-frequency device as a product.

Next, the third high-frequency circuit package of the present invention has substantially the same configuration as the second high-frequency circuit package of the present invention shown in FIG. 6, and in the third high-frequency circuit package, The line width of the portion of the line conductor 33 sandwiched between the dielectric substrate 31 and the dielectric frame 34, that is, the line width of the portion forming the hermetic seal portion, is the width of the microstrip line portion of the line conductor 33 at both ends of the hermetic seal portion. It is equal to the line width and connected to the microstrip line part.
Each side of 33 is narrowed by continuously changing the curve shape in which the tangent slope is continuous, that is, according to the curve shape expressed by a function in which the first-order derivative is continuous over the changing section. In addition, at portions connected to the microstrip line portion at both ends of the strip line portion, connection is made such that the tangent to each side of the line conductor 33 of the strip line portion is common to the tangent to each side of the microstrip line portion. Have been.

Therefore, the strip line portion of the line conductor 33 in the high-frequency input / output terminal section 36 of the third high-frequency circuit package according to the present invention is fixed like the strip line 3b in the conventional high-frequency input / output terminal. Even if it has a line width portion, it is assumed that the line width is continuously changed to eliminate a sudden and discontinuous change.

With such a configuration, the dielectric substrate 31 and the lower ground conductor 32 are formed in the same manner as the second high-frequency circuit package.
A third high-frequency circuit package of the present invention is formed by integrally forming a high-frequency input / output terminal portion 36 including a line conductor 33, a dielectric frame 34, and an upper ground conductor 35.

According to the third high-frequency circuit package of the present invention having the above-described structure, the high-frequency input / output terminal portion 36, which is the input / output terminal portion for high-frequency signals, starts from the vicinity of the mounting portion 31a on the upper surface of the dielectric substrate 31. A line conductor 33 formed around the outer periphery, a portion of which is sandwiched between the dielectric substrate 31 and the dielectric frame 32, has a line width at the tapered portion of the sandwiched portion where each side of the line conductor has a tangent line. Since the change in the slope is narrowed as a continuous curve shape, the reflection characteristic does not deteriorate even for a high-frequency signal of a high frequency as described above, and a high-frequency circuit package having good transmission characteristics is obtained. .

The dielectric substrate 31 and the dielectric frame 32 in the second or third high-frequency circuit package of the present invention have the above-mentioned dielectric of the high-frequency input / output terminal of the present invention according to the specifications of the package. The same dielectric as that of the substrate 11 may be used. In addition, almost the entire lower surface of the dielectric substrate 31
It is desirable to form a ground conductor in the same manner as the lower ground conductor 32 from the viewpoint that the lower ground conductor 32 needs to be in an ideal ground state.

The dielectric substrate 31 and the dielectric frame 32 are joined by, for example, laminating and firing and integrating ceramic green sheets to become the dielectric substrate 31 and the dielectric frame 32 after firing. Also, the lower ground conductor 32 and the line conductor 33
The upper grounding conductor 35 is, for example, printed and buried in a predetermined pattern with a conductor paste on the dielectric substrate 31 or the dielectric frame 34, respectively, and fired and integrated with the dielectric substrate 31 or the dielectric frame 34. As a result, the dielectric substrate 31 or the dielectric frame 34 is adhered and formed.

In this embodiment, the portion corresponding to the dielectric wall member of the high frequency input / output terminal portion 36 of the dielectric frame 32 is integrated with the dielectric frame 32 so that its upper surface is in contact with the upper surface of the dielectric frame 32. In this case, a lid (not shown) is mounted on the mounting portion 31a by attaching a lid (not shown) directly or via a frame-shaped metal seal or the like. The high-frequency circuit components can be easily hermetically sealed and accommodated therein. Also, there may be a step as described above.

In this embodiment, one high frequency input / output terminal 36 is provided on each side of the dielectric substrate 31. However, if necessary, a plurality of high frequency input / output terminals 36 may be provided at other positions or on one side. An input / output terminal unit 36 may be provided.

Further, also in the second or third high-frequency circuit package of the present invention, the side of the dielectric substrate 31 corresponding to the dielectric substrate of the high-frequency input / output terminal portion 36 and the dielectric of the dielectric frame 32 are formed. A side-surface ground conductor may be provided on the side surface corresponding to the body wall member. In this case, each ground conductor becomes an ideal ground (potential 0), and the line conductor 33 of the hermetic seal portion is shielded from high-frequency signals. Can be formed.

The lower ground conductor 32 and the upper ground conductor 35.
In addition to forming the side ground conductor as a metal conductor coating layer, by arranging a large number of through conductors or connecting them, the side grounding conductor may function as a substantially continuous ground layer similarly to the coating layer. Alternatively, it may be formed by attaching a metal plate or a metal block.

[0067]

Next, specific examples of the present invention will be described. [Example 1] By a ceramic molding method by so-called simultaneous sintering by a ceramic green sheet laminating method, a length ×
A length (wall thickness) × width × thickness 0.6 mm × 2.0 mm × on a dielectric substrate made of alumina ceramics (relative dielectric constant ε _r = 8.8) with a width × thickness of 1.2 mm × 2.0 mm × 0.2 mm
A dielectric wall member made of 0.2 mm alumina ceramics is joined, a lower ground conductor made of about 10 μm thick tungsten and 2-6 μm thick Ni + Au plating is formed on the lower surface of the dielectric substrate, and a line made of similar material is formed on the upper surface. A high-frequency input / output terminal was produced in which a conductor was formed and an upper ground conductor made of a similar material was formed on the upper surface of the dielectric wall member.

Here, the line width of the line conductor is 0.22 mm at the microstrip line portion, and the characteristic impedance is set.
Both ends of the hermetic seal portion, that is, both ends of the strip line portion were also set to 0.22 mm. Also,
The first high-frequency input / output terminal A of the present invention was manufactured so that the line width of the strip line portion was linearly reduced toward the center thereof, and was minimized to 0.06 mm at the intermediate point.

As a comparative example, the line width of the microstrip line portion was set to 0.22 m with the same material composition as described above.
m, the line width of the strip line of the hermetic seal part is 0.06 mm, and the taper angle is 45 degrees and the taper length is 0.08 mm as shown in FIGS. 14 and 15.
To form a conventional high frequency input / output terminal B.

As a result of applying these high-frequency input / output terminals A and B to the high-frequency signal input / output section of the high-frequency circuit package, the transmission coefficient (S | S ₂₁ |) of the parameters was determined.

FIG. 7 shows the frequency characteristics of the transmission coefficient of the high frequency input / output terminal A of the present invention, and FIG. 8 shows the frequency characteristics of the transmission coefficient of the high frequency input / output terminal B of the comparative example. Indicated by In these figures, the horizontal axis is 0-65G
The frequency (unit: GHz) in the range of Hz, the vertical axis represents the transmission coefficient (| S ₂₁ |, the unit: dB), and each characteristic curve represents the frequency characteristic of the transmission coefficient.

From the results shown in FIGS. 7 and 8, the transmission coefficient decreases and becomes smaller as the frequency becomes higher at any of the high frequency input / output terminals. However, the high frequency input / output terminal B of the comparative example exceeds 40 GHz. While the rate of decrease of the transmission coefficient rapidly increases from the vicinity, the change in the transmission coefficient periodically fluctuates at the high frequency input / output terminal A of the present invention, and is sharp and monotonous as in the comparative example. It can be seen that there is no decrease.

As a result, the high frequency input / output terminal A
And B are made of the same material, and the transmission loss caused by the material in the line structure as the strip line can be considered to be substantially the same. It can be considered that the difference is due to the difference in the reflection coefficient based on the difference.

Accordingly, the high frequency input / output terminal A of the present invention
It can be seen that has excellent transmission characteristics excellent in reflection characteristics as compared with the conventional high frequency input / output terminal B.

Example 2 In the same manner as in Example 1, the high frequency input / output terminal A of the present invention was used.
In contrast, the change in the line width of the strip line
From 0.22mm to 0.06mm at the midpoint, the phase changes by π / 2 over a distance of 0.18mm from both ends to the midpoint,
The first high-frequency input / output terminal C of the present invention was manufactured by changing the amplitude in a sinusoidal manner such that the amplitude became 1/2 of the line width difference.

The results of evaluating the transmission characteristics of this high frequency input / output terminal C in the same manner as in [Example 1] are shown in FIG.

FIG. 9 shows the frequency characteristics of the transmission coefficient (| S ₂₁ |) obtained as a result of application to the high-frequency signal input / output section of the high-frequency circuit package, similar to FIGS. 7 and 8. As can be seen from FIG. 9, the change in the transmission coefficient of the high frequency input / output terminal C of the present invention also periodically increases and decreases similarly to the high frequency input / output terminal A, and the transmission coefficient sharply increases as in the comparative example. In addition, it does not decrease monotonously, and it can be seen that it has good transmission characteristics with excellent reflection characteristics.

Example 3 In the same manner as in Example 1, the high frequency input / output terminal A of the present invention was used.
In contrast, the change in the line width of the strip line
The first high frequency input / output terminal D of the present invention was manufactured by changing the exponential function from 0.22 mm to 0.06 mm at the intermediate point.

The result of evaluating the transmission characteristics of the high frequency input / output terminal D in the same manner as in [Example 1] is shown in FIG.

FIG. 10 shows the frequency characteristics of the transmission coefficient (| S ₂₁ |) obtained as a result of application to the high-frequency signal input / output unit of the high-frequency circuit package, similar to FIGS. 7 to 9. As can be seen from FIG. 10, the change of the transmission coefficient of the high frequency input / output terminal D of the present invention periodically increases and decreases similarly to the high frequency input / output terminal A, and the transmission coefficient sharply increases as in the comparative example. In addition, it does not decrease monotonously, and it can be seen that it has good transmission characteristics with excellent reflection characteristics.

Example 4 In the same manner as in Example 1, the line width of the line conductor is 0.22 mm in the microstrip line portion, the characteristic impedance is 50 Ω, and both ends of the hermetic seal portion, that is, both ends of the strip line portion are also 0.22 mm. mm, the line width of the strip line portion changes in a sinusoidal manner such that the phase changes by π over the center from the center to the distance from both ends to the intermediate point by 0.18 mm, and the amplitude becomes 1/4 of the line width difference. Thus, the second high frequency input / output terminal E of the present invention was manufactured.

As a comparative example, the line width of the microstrip line portion was 0.22 mm, the line width of the strip line in the hermetic seal portion was 0.08 mm, and both of the tapered lines were tapered as shown in FIGS. Angle 45
Degree, the taper length is connected by the conversion part of 0.08 mm,
A high frequency input / output terminal F having a conventional configuration was manufactured.

The transmission characteristics of these high frequency input / output terminals E and F were evaluated in the same manner as in [Example 1].
FIG. 11 is a diagram illustrating the frequency characteristics of the reflection coefficient of the high frequency input / output terminal F of the comparative example, and FIG. In these figures, the horizontal axis represents the frequency (unit: GHz) in the range of 0 to 65 GHz,
The vertical axis reflection coefficient (| S ₁₁ |, Unit: dB) represents the, each characteristic curve represents the frequency characteristic of the reflection coefficient.

From the results shown in FIGS. 11 and 12, the reflection coefficient increases and increases as the frequency increases in any of the high-frequency input / output terminals. However, in the high-frequency input / output terminal F of the comparative example, the reflection coefficient increases. While the frequency increases monotonically with an increase in frequency, the change in the reflection coefficient periodically increases and decreases at the high frequency input / output terminal E of the present invention, and does not monotonically increase as in the comparative example. I understand.

As a result, the high frequency input / output terminal E
Since the same material is used for F and F, and the transmission loss due to the material in the line structure as the strip line can be regarded as substantially the same, the difference in the reflection coefficient, that is, the difference in the shape of the line in the strip line portion, It can be considered that it is due to the difference of the reflection coefficients based on Note that a resonance point is observed around 46 GHz, which is due to the presence of the dielectric wall, and is a phenomenon that is observed in both the high frequency input / output terminal E of the present invention and the high frequency input / output terminal F of the comparative example. It does not relate to the effects of the present invention.

Therefore, the high frequency input / output terminal E of the present invention
It can be seen that has excellent transmission characteristics with excellent reflection characteristics even in a high frequency band, as compared with the conventional high frequency input / output terminal F.

[Example 5] In the same manner as in Example 4, the high frequency input / output terminal F of the present invention was used.
In contrast, the change in the line width of the strip line
From 0.22mm to 0.08mm at the midpoint, over a distance of 0.18mm from both ends to the midpoint, two quadratic functions differing only in the sign of the coefficients of the quadratic terms are connected so that the tangent is common at the connection point The second high-frequency input / output terminal G of the present invention was manufactured by changing the shape according to the shape of the curved line.

FIG. 13 shows the result of evaluating the transmission characteristics of the high frequency input / output terminal G in the same manner as in [Example 4]. Figure
FIG. 13 shows the frequency characteristics of the reflection coefficient (| S ₁₁ |) obtained as a result of application to the high-frequency signal input / output unit of the high-frequency circuit package as in FIGS. 11 and 12.

As can be seen from FIG. 13, the high-frequency input / output terminal G of the present invention also has a change in the reflection coefficient periodically increasing and decreasing similarly to the high-frequency input / output terminal E. It can be seen that it does not monotonically increase like the output terminal F and has good transmission characteristics with excellent reflection characteristics even in a high frequency band.

As described above, according to the high-frequency input / output terminal of the present invention, a high-frequency input / output terminal having excellent reflection characteristics for high-frequency high-frequency signals and having excellent transmission characteristics as a high-frequency signal input / output section of a high-frequency circuit package. It was confirmed that it was an output terminal.

Further, the first high-frequency circuit package of the present invention using the above-described high-frequency input / output terminal of the present invention, and the high-frequency input / output terminal portion having the same configuration as the above-described high-frequency input / output terminal of the present invention. The transmission characteristics of the second or third high-frequency circuit package according to the present invention were evaluated in the same manner. It was confirmed that the transmission characteristics were excellent.

Note that the above is only an example of the embodiment of the present invention, and the present invention is not limited to the above example, and various changes and improvements may be made without departing from the gist of the present invention. It doesn't hurt anything.

For example, the shape of the change of the line width in the strip line portion may be a curve shape based on various Bessel functions or a curve shape based on a continuously and monotonically changing function.

[0094]

According to the first and second high frequency input / output terminals of the present invention, the strip conductor has a strip line structure in a portion sandwiched between the dielectric substrate and the dielectric wall member, that is, a hermetic seal portion. Because it does not have a discontinuous portion of the line width that is abrupt like the conventional line conductor in the part, the reflection characteristics and the transmission characteristics do not deteriorate even for high-frequency high-frequency signals, and good transmission characteristics are obtained. Will have.

According to the first high-frequency circuit package of the present invention, the above-mentioned first or second high-frequency input / output terminal of the present invention is provided as the high-frequency input / output terminal. Similarly, even for a high-frequency signal of a high frequency, the transmission characteristics are not deteriorated and the transmission characteristics are excellent.

According to the second high-frequency circuit package of the present invention, the structure of the first high-frequency input / output terminal of the present invention is provided as the structure of the high-frequency input / output terminal. As a result, similarly, even for a high-frequency signal of a high frequency, the reflection characteristics and the transmission characteristics are not deteriorated, and the transmission characteristics are excellent.

According to the third high-frequency circuit package of the present invention, the structure of the second high-frequency input / output terminal of the present invention is provided as the structure of the high-frequency input / output terminal. As a result, similarly, even for a high-frequency signal of a high frequency, the reflection characteristics and the transmission characteristics are not deteriorated, and the transmission characteristics are excellent.

As described above, according to the present invention, the reflection characteristics of a high-frequency signal for a high-frequency input / output terminal having a hermetic seal portion of a package for transmitting a high-frequency signal by connecting a microstrip line and a strip line are described. It is possible to provide a high frequency input / output terminal which has excellent transmission characteristics and prevents deterioration.

According to the present invention, there is provided a high-frequency circuit package having a high-frequency input / output section having a hermetic seal portion for transmitting a high-frequency signal by connecting a microstrip line and a strip line. A high-frequency circuit package having excellent transmission characteristics, which prevents deterioration of reflection characteristics of the high-frequency circuit, can be provided.

[Brief description of the drawings]

FIG. 1 is a perspective view showing an example of an embodiment of a first high frequency input / output terminal of the present invention.

FIG. 2 is a top view showing an example of an embodiment of the first high frequency input / output terminal of the present invention.

FIG. 3 is a perspective view showing an example of an embodiment of a second high frequency input / output terminal of the present invention.

FIG. 4 is a top view showing an example of an embodiment of a second high frequency input / output terminal of the present invention.

FIG. 5 is a perspective view showing an example of an embodiment of a first high-frequency circuit package according to the present invention.

FIG. 6 is a perspective view showing an example of an embodiment of a second high-frequency circuit package according to the present invention.

FIG. 7 is a diagram showing a frequency characteristic of a transmission coefficient for the first embodiment of the first high frequency input / output terminal of the present invention.

FIG. 8 is a diagram showing a frequency characteristic of a transmission coefficient for an example of a conventional high frequency input / output terminal.

FIG. 9 is a diagram showing a frequency characteristic of a transmission coefficient for another embodiment of the first high frequency input / output terminal of the present invention.

FIG. 10 is a diagram showing a frequency characteristic of a transmission coefficient in another embodiment of the first high frequency input / output terminal of the present invention.

FIG. 11 is a diagram showing frequency characteristics of a reflection coefficient of the second embodiment of the high frequency input / output terminal of the present invention.

FIG. 12 is a diagram showing a frequency characteristic of a reflection coefficient for an example of a conventional high frequency input / output terminal.

FIG. 13 is a diagram showing a frequency characteristic of a reflection coefficient in another embodiment of the second high frequency input / output terminal of the present invention.

FIG. 14 is a perspective view showing an example of a conventional high frequency input / output terminal.

FIG. 15 is a top view showing an example of a conventional high frequency input / output terminal.

[Explanation of symbols]

 11, 11 ', 25, 31 ... dielectric substrate 31a ... mounting section 12, 12', 26, 32 ... lower ground conductor 13, 13 ', 27, 33, ... -Line conductors 14, 14 ', 28, ...-Dielectric wall member 34----Dielectric frame 15, 15', 29, 35-Upper ground conductor 21-・ ・ ・ ・ ・ ・ ・ ・ ・ Board 21a ・ ・ ・ ・ ・ ・ ・ ・ Mounting part 22 ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ Frame 23 ・ ・ ・ ・ ・ ・ ・ ・ ・ ・ I / O terminal mounting part 24 ........... High frequency input / output terminals

Claims (5)

[Claims] 1. A dielectric substrate having a lower ground conductor on a lower surface and a line conductor on an upper surface, and a part of the line conductor sandwiched and joined to an upper surface of the dielectric substrate, and having an upper ground conductor on an upper surface. For a high frequency, wherein a line width of a portion of the line conductor sandwiched between the dielectric substrate and the dielectric wall member is gradually narrowed from both ends to a center portion. Input / output terminal. 2. A dielectric substrate having a lower ground conductor on a lower surface and a line conductor on an upper surface, and a part of the line conductor sandwiched and joined to an upper surface of the dielectric substrate, and an upper ground conductor on an upper surface. A line width of a portion of the line conductor sandwiched between the dielectric substrate and the dielectric wall member, from both ends to a center portion, and a change in inclination of a tangent of each side of the line conductor. Characterized by having a narrow continuous curve. 3. A substrate having a mounting portion for mounting a high-frequency circuit component on an upper surface, a frame joined to the substrate so as to surround the mounting portion, and formed by cutting out the frame.
3. A high-frequency circuit comprising: an input / output terminal mounting portion having a conductive bottom surface; and a high-frequency input / output terminal according to claim 1 fitted to said input / output terminal mounting portion. package. 4. A dielectric substrate having a lower ground conductor on a lower surface, a mounting portion for mounting a high-frequency circuit component on an upper surface, and a line conductor formed from the vicinity of the mounting portion to the vicinity of the outer periphery; A dielectric frame body joined to the mounting portion so as to sandwich a part of the line conductor on the upper surface and having an upper ground conductor on the upper surface, wherein the dielectric substrate of the line conductor and the dielectric frame A high-frequency circuit package characterized in that the line width of the portion sandwiched between the body and the line is gradually narrowed from both ends to the center. 5. A dielectric substrate having a lower ground conductor on a lower surface, a mounting portion for mounting a high-frequency circuit component on an upper surface, and a line conductor formed from the vicinity of the mounting portion to the vicinity of an outer periphery; A dielectric frame body joined to the mounting portion so as to sandwich a part of the line conductor on the upper surface and having an upper ground conductor on the upper surface, wherein the dielectric substrate of the line conductor and the dielectric frame A high-frequency circuit package, characterized in that each side of the line conductor is narrowed as a continuous curve shape in which the tangential slope changes continuously from the ends to the center of the line width of the portion sandwiched between the body and both ends.