JP4663351B2 - Electronic equipment - Google Patents

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JP4663351B2
JP4663351B2 JP2005040526A JP2005040526A JP4663351B2 JP 4663351 B2 JP4663351 B2 JP 4663351B2 JP 2005040526 A JP2005040526 A JP 2005040526A JP 2005040526 A JP2005040526 A JP 2005040526A JP 4663351 B2 JP4663351 B2 JP 4663351B2
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conductor
line
waveguide
dielectric layer
frequency
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JP2006229568A (en
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貴司 木村
義信 澤
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Kyocera Corp
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Kyocera Corp
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item

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Description

本発明は、マイクロ波やミリ波の領域において使用される、高周波回路を形成するコプレーナ線路またはグランド付きコプレーナ線路等の高周波線路を導波管に変換し、高周波回路とアンテナあるいは高周波回路間の接続を導波管で行なうことにより、システムの実装、評価を容易に行なえる高周波線路−導波管変換器に関するものである。   The present invention converts a high-frequency line such as a coplanar line forming a high-frequency circuit or a coplanar line with a ground, which is used in a microwave or millimeter wave region, into a waveguide, and connects the high-frequency circuit and the antenna or the high-frequency circuit. The present invention relates to a high-frequency line-waveguide converter that can easily mount and evaluate a system by performing the above-described process using a waveguide.

近年、情報伝達に用いられる高周波信号は、マイクロ波領域からミリ波領域の周波数までを活用することが検討されている。例えば、ミリ波の高周波信号を用いた応用システムとして車間レーダーが提案されている。このような高周波用のシステムにおいては、高周波信号の周波数が高いことにより、回路を構成するマイクロストリップ線路構造等の高周波線路による高周波信号の減衰が大きくなるという問題点がある。   In recent years, high-frequency signals used for information transmission have been studied to utilize frequencies from the microwave region to the millimeter wave region. For example, an inter-vehicle radar has been proposed as an application system using millimeter-wave high-frequency signals. In such a high-frequency system, there is a problem that the high-frequency signal is attenuated by a high-frequency line such as a microstrip line structure constituting the circuit due to the high frequency of the high-frequency signal.

このようなマイクロストリップ線路構造等の高周波線路に比較して、導波管では高周波信号の伝送損失は小さいことが知られている。例えば、マイクロストリップ線路等による通常の高周波線路のインピーダンス(50Ω)に比較して、導波管のインピーダンス(周波数によって変化するが概略500Ωのオーダーで設計される)は大きく、通常の高周波線路では伝送される信号に対して誘電体中を伝送する電界の寄与が大きいのに対し、導波管ではその誘電体として誘電正接がほぼ0の空気を用いていること、相対的に小さい磁気エネルギーのもととなる導波管の管壁を流れる電流が小さくて良いこと、かつその電流が導波管の管壁の比較的広い面積に流れるため電気抵抗が小さくなり導体損が小さくなる構造になっていることによるものである。   It is known that a transmission loss of a high-frequency signal is small in a waveguide as compared with a high-frequency line such as a microstrip line structure. For example, compared to the impedance (50Ω) of a normal high-frequency line such as a microstrip line, the impedance of the waveguide (which varies depending on the frequency but is designed on the order of about 500Ω) is large. The contribution of the electric field transmitted through the dielectric to the generated signal is large, whereas the waveguide uses air having a dielectric loss tangent of almost zero as its dielectric, The current flowing through the waveguide tube wall can be small, and since the current flows in a relatively large area of the waveguide tube wall, the electrical resistance is reduced and the conductor loss is reduced. Is due to being.

また、導波管同士は通常、ねじで接続される。そのため着脱を容易に行なうことができるため、高周波回路モジュールとアンテナとの接続に導波管を用いれば、組み立て前にそれぞれの導波管ポートを用いてそれぞれの検査を行ない、良品同士を組み合わせて高周波フロントエンドを組み立てることができ、その製造の歩留まりを上げることができる。これらのことから従来、特に伝送距離が長くなることが多い高周波回路モジュールとアンテナとの間の伝送に導波管を用いたフロントエンドが多く採用されてきた。   The waveguides are usually connected with screws. Therefore, since it can be easily attached and detached, if a waveguide is used for the connection between the high-frequency circuit module and the antenna, each inspection is performed using each waveguide port before assembly, and non-defective products are combined. A high-frequency front end can be assembled, and the manufacturing yield can be increased. For these reasons, a front end using a waveguide for transmission between a high-frequency circuit module and an antenna, which often has a long transmission distance, has been conventionally used.

このような高周波フロントエンドとしては、誘電体層と、その表面に形成した線路導体およびその両側に配置された同一面接地導体層から成るコプレーナ線路と、このコプレーナ線路の先端に形成したアンテナとして機能するスロットと、誘電体層の裏面のスロットと対向する位置に接続した導波管と、誘電体層の内部に導波管および同一面接地導体層を接続するように形成したシールド導体部とを具備する高周波線路−導波管変換器が提案されている(下記の特許文献1参照)。   Such a high-frequency front end functions as a dielectric layer, a coplanar line composed of a line conductor formed on the surface of the dielectric layer, and a coplanar ground conductor layer disposed on both sides of the dielectric layer, and an antenna formed on the tip of the coplanar line. And a waveguide connected to a position facing the slot on the back surface of the dielectric layer, and a shield conductor portion formed so as to connect the waveguide and the same-surface grounded conductor layer inside the dielectric layer. A high-frequency line-waveguide converter is proposed (see Patent Document 1 below).

この変換器によれば、スロットから誘電体層と導波管内部との界面までの距離を誘電体層を伝送する電磁波の波長の1/4に設定することにより、スロットから放射され、誘電体層と導波管内部との界面で反射して同一面接地導体層で再度反射して界面に到達した反射波と、スロットから直接界面まで伝送してきた電磁波(直接波)との行路差が電磁波の波長の1/2と等しくなり、反射波の磁界が誘電体層と導波管内部との界面で反射する際に位相が反転することから、界面では直接波と反射波が同位相になって強め合い、導波管へ伝播していくこととなる。   According to this converter, the distance from the slot to the interface between the dielectric layer and the inside of the waveguide is set to 1/4 of the wavelength of the electromagnetic wave transmitted through the dielectric layer. The path difference between the reflected wave reflected at the interface between the layer and the inside of the waveguide, reflected again from the ground conductor layer on the same plane and reaching the interface, and the electromagnetic wave transmitted directly from the slot to the interface (direct wave) Since the phase is inverted when the reflected wave magnetic field is reflected at the interface between the dielectric layer and the inside of the waveguide, the direct wave and the reflected wave are in phase at the interface. Will propagate to the waveguide.

すなわち、スロットと導波管との間に介在する、厚さを電磁波の波長の1/4に設定した誘電体層は、インピーダンスが互いに異なるスロットと導波管との整合器として機能することになる。
特開2004−32321号公報
That is, the dielectric layer interposed between the slot and the waveguide and having a thickness set to ¼ of the wavelength of the electromagnetic wave functions as a matching unit between the slot and the waveguide having different impedances. Become.
JP 2004-32321 A

しかしながら、従来の高周波線路−導波管変換器は半導体素子等の電子素子を他の回路基板に搭載し、この電子素子と高周波線路−導波管変換器の線路導体とをワイヤ等で電気的に接続し、電子装置とした場合に、電子素子と高周波線路−導波管変換器の接地導体層との間に電位差が生じやすく、電気的特性が劣化して高周波線路と導波管との間における信号の変換効率が低くなったり、変換特性のばらつきが生じるという問題があった。   However, the conventional high-frequency line-waveguide converter has an electronic element such as a semiconductor element mounted on another circuit board, and the electronic element and the line conductor of the high-frequency line-waveguide converter are electrically connected by a wire or the like. When the electronic device is connected to the ground, a potential difference is easily generated between the electronic element and the ground conductor layer of the high-frequency line-waveguide converter, and the electrical characteristics are deteriorated so that the high-frequency line and the waveguide There is a problem in that the signal conversion efficiency is low and the conversion characteristics vary.

本発明は上記問題点に鑑み案出されたもので、その目的は、変換効率が高く、変換特性のばらつきが小さい高周波線路−導波管変換器を提供することにある。   The present invention has been devised in view of the above problems, and an object thereof is to provide a high-frequency line-waveguide converter having high conversion efficiency and small variation in conversion characteristics.

本発明の電子装置は、誘電体層の上面に形成された線路導体および前記誘電体層の上面で前記線路導体の一端部を取り囲むように形成された同一面接地導体層から成る高周波線路と、前記同一面接地導体層に前記線路導体の前記一端部と直交するように形成されて前記線路導体と電磁的に結合されたスロットと、平面透視して前記線路導体の前記一端部お
よび前記スロットを取り囲むように前記誘電体層の側面または内部に配されたシールド導体部とを有する基板、電子素子の搭載部を有するとともに貫通孔が形成された金属製のベース材前記搭載部に搭載された電子素子と、前記ベース材の下面に前記貫通孔と連通するように接続された導波管とを備え、前記基板は、前記ベース材の上面に、前記貫通孔を塞ぎ、つ前記貫通孔上に前記線路導体の前記一端部および前記スロットが位置するようにしてろう付けされ前記電子素子の電極と前記線路導体とがワイヤを介して電気的に接続され、前記ベース材の面に、前記ワイヤと対応する位置であって、かつ上方に向かって前記基板の側面から遠ざかるように、平面視で前記基板の側面と平行な方向に形成された傾斜部が設けられていることを特徴とする。
An electronic device according to the present invention includes a high-frequency line including a line conductor formed on an upper surface of a dielectric layer and a coplanar ground conductor layer formed so as to surround one end portion of the line conductor on the upper surface of the dielectric layer; A slot formed on the same-surface grounded conductor layer so as to be orthogonal to the one end of the line conductor and electromagnetically coupled to the line conductor; and the one end and the slot of the line conductor as seen through a plane. a substrate that having a said dielectric layer shield conductor portions disposed side or inside of the surround, a metal base member having a through hole is formed and having a mounting portion of the electronic device, wherein the mounting portion An electronic device mounted on the base material, and a waveguide connected to the bottom surface of the base material so as to communicate with the through-hole, and the substrate closes the through-hole on the top surface of the base material . On the through hole Serial brazed as the one end and the slot is located in the line conductor, the and the electrode and the line conductor of the electronic device are electrically connected via a wire, the upper surface of the base material, the An inclined portion formed in a direction parallel to the side surface of the substrate in a plan view is provided at a position corresponding to the wire and away from the side surface of the substrate toward the upper side. .

本発明の電子装置によれば誘電体層の上面に形成された線路導体および誘電体層の上面で線路導体の一端部を取り囲むように形成された同一面接地導体層から成る高周波線路と、同一面接地導体層に線路導体の一端部と直交するように形成されて線路導体と電磁的に結合されたスロットと、平面透視して線路導体の一端部およびスロットを取り囲むように誘電体層の側面または内部に配されたシールド導体部とを有する基板、電子素子の搭載部を有するとともに貫通孔が形成された金属製のベース材と、搭載部に搭載された電子素子と、ベース材の下面に貫通孔と連通するように接続された導波管とを備え、基板は、ベース材の上面に、貫通孔を塞ぎ、つ貫通孔上に線路導体の一端部およびスロットが位置するようにしてろう付けされ電子素子の電極と線路導体とがワイヤを介して電気的に接続され、ベース材の面に、ワイヤと対応する位置であって、かつ上方に向かって基板の側面から遠ざかるように、平面視で基板の側面と平行な方向に形成された傾斜部が設けられていることから、搭載部に搭載された電子素子と高周波線路−導波管変換器とが接地導体としてのベース材を共有するので電子素子と高周波線路−導波管変換器の接地導体との電位差を同じか、非常に小さくすることができ、電子素子と高周波線路−導波管変換器との間に生じる電気特性の劣化を有効に抑制することができる。その結果、高周波線路と導波管との間における信号の変換効率を高くすることができるとともに、変換特性のばらつきを非常に小さくすることができる。また、電子素子と高周波線路−導波管変換器とを電気的に接続するワイヤとベース材との間の浮遊容量を漸次変化させることによってインピーダンスの急激な変化を有効に防止でき、ワイヤの誘導成分を減少させて反射損失を有効に防止することができる。その結果、電気特性をより向上させることができる。また、変換効率が高く、変換特性のばらつきが小さい電子装置となる。
According to the electronic device of the present invention, a high-frequency line including a line conductor formed on the upper surface of the dielectric layer and a coplanar ground conductor layer formed so as to surround one end of the line conductor on the upper surface of the dielectric layer ; A slot formed on the same grounded conductor layer so as to be orthogonal to one end of the line conductor and electromagnetically coupled to the line conductor, and a dielectric layer so as to surround the one end of the line conductor and the slot in a plan view . a substrate that have a a shield conductor portion disposed sides or inside a metallic base member having a through hole is formed and having a mounting portion of the electronic device, and an electronic device mounted on the mounting portion, the base and a connected waveguide so as to communicate with the through holes on the lower surface of the timber, the substrate, the upper surface of the base material, closing the through-hole, one end and the slot position if one through-hole on a line conductor to be brazed to And the electrode and the line conductor of the electronic element is electrically connected via a wire, the upper surface of the base member, a position corresponding to the wire, and away from the side surface of the substrate upward, viewed Since the inclined portion formed in the direction parallel to the side surface of the substrate is provided , the electronic element mounted on the mounting portion and the high-frequency line-waveguide converter share a base material as a ground conductor. Therefore, the potential difference between the electronic element and the ground conductor of the high-frequency line-waveguide converter can be the same or very small, and the electrical characteristics deteriorate between the electronic element and the high-frequency line-waveguide converter. Can be effectively suppressed. As a result, the signal conversion efficiency between the high-frequency line and the waveguide can be increased, and variations in conversion characteristics can be greatly reduced. In addition, by gradually changing the stray capacitance between the wire that electrically connects the electronic device and the high-frequency line-waveguide converter and the base material, a sudden change in impedance can be effectively prevented, and the wire is guided. By reducing the component, reflection loss can be effectively prevented. As a result, the electrical characteristics can be further improved. In addition, the electronic device has high conversion efficiency and small variation in conversion characteristics.

次に、本発明の発明を添付資料に基づき詳細に説明する。図1は本発明の高周波線路−導波管変換器の実施の形態の一例を示す平面図であり、図2は図1の高周波線路−導波管変換器のA−A’線断面図である。図1,2において、1は高周波線路、2は誘電体層、3は線路導体、4は同一面接地導体層、5は同一面接地導体層4に形成されたスロット、6は導波管、7はシールド導体部、13はベース材である。そして、主に高周波線路1、誘電体層2、線路導体3、同一面接地導体層4、スロット5およびシールド導体部7で基板が構成され、この基板をベース材13に接続することにより、高周波線路−導波管変換器が形成される。   Next, the invention of the present invention will be described in detail based on the attached material. FIG. 1 is a plan view showing an example of an embodiment of a high-frequency line-waveguide converter according to the present invention, and FIG. 2 is a cross-sectional view of the high-frequency line-waveguide converter of FIG. is there. 1 and 2, 1 is a high-frequency line, 2 is a dielectric layer, 3 is a line conductor, 4 is a ground plane conductor layer, 5 is a slot formed in the ground plane conductor layer 4, 6 is a waveguide, 7 is a shield conductor part, 13 is a base material. A substrate is mainly composed of the high-frequency line 1, the dielectric layer 2, the line conductor 3, the coplanar ground conductor layer 4, the slot 5, and the shield conductor portion 7. By connecting this substrate to the base material 13, A line-waveguide converter is formed.

高周波線路1は、誘電体層2の上面に形成された線路導体3と、線路導体3を取り囲むように形成された同一面接地導体層4とによってコプレーナ線路状に形成されている。また、誘電体層2の上面の同一面接地導体層4にはスロット5が設けられており、線路導体3の一端と電磁的に結合されている。これにより、高周波線路1に伝送された高周波信号は、スロット5から電磁波として、下方に延びるように配置された導波管6内に放射される。   The high-frequency line 1 is formed in a coplanar line shape by a line conductor 3 formed on the upper surface of the dielectric layer 2 and a coplanar ground conductor layer 4 formed so as to surround the line conductor 3. Further, a slot 5 is provided in the same grounded conductor layer 4 on the upper surface of the dielectric layer 2 and is electromagnetically coupled to one end of the line conductor 3. Thereby, the high frequency signal transmitted to the high frequency line 1 is radiated from the slot 5 as an electromagnetic wave into the waveguide 6 arranged to extend downward.

また、誘電体層2は、その側面に形成された側面導体または図1のような誘電体層2の内部に配された貫通導体から成るシールド導体部7によりシールドされており、スロット5から誘電体層2中に放射された電磁波や誘電体層2の下面と導波管6内部との界面で反射した電磁波が漏れ出すことを防ぎ、変換効率が低下することを防止している。なお、シールド導体部7は、平面透視してスロット5を取り囲むように一定間隔(高周波線路1を伝送する信号の波長の1/4倍以下)を空けて形成されている。   Further, the dielectric layer 2 is shielded by a shield conductor portion 7 formed of a side conductor formed on the side surface or a through conductor disposed inside the dielectric layer 2 as shown in FIG. The electromagnetic wave radiated into the body layer 2 and the electromagnetic wave reflected at the interface between the lower surface of the dielectric layer 2 and the inside of the waveguide 6 are prevented from leaking, and the conversion efficiency is prevented from being lowered. The shield conductor portion 7 is formed with a constant interval (not more than 1/4 times the wavelength of the signal transmitted through the high-frequency line 1) so as to surround the slot 5 when seen in a plan view.

また、誘電体層2の内層には平面透視してスロット5を取り囲むように形成された枠状の内部接地導体層8が配され、この内部接地導体層8と同一面接地導体層4とがシールド導体部7で接続されていてもよい。   In addition, a frame-like internal ground conductor layer 8 is disposed on the inner layer of the dielectric layer 2 so as to surround the slot 5 when seen in a plan view. The shield conductor 7 may be connected.

このような多層構造とすることにより、誘電体層2に生じる共振モードであるTMモードの最も磁界が強い、導波管6の内部に接している下側の誘電体層2と、高周波線路1が形成された上側の誘電体層2とを内部接地導体層8によって分離することができるので、高周波線路1を伝送する電磁界モードであるTEモードとTMモードとが結合して高周波線路1を伝送する信号エネルギーがTMモードへ移行するのを有効に防止することができる。その結果、共振による信号反射を有効に防止して高周波線路1から導波管6への良好な信号変換を行なうことができる。   By adopting such a multilayer structure, the lower dielectric layer 2 in contact with the inside of the waveguide 6 having the strongest magnetic field of the TM mode, which is a resonance mode generated in the dielectric layer 2, and the high-frequency line 1 Can be separated from the upper dielectric layer 2 by the internal ground conductor layer 8, so that the TE mode and the TM mode, which are the electromagnetic field modes that transmit the high-frequency line 1, are combined to form the high-frequency line 1. It is possible to effectively prevent the signal energy to be transmitted from shifting to the TM mode. As a result, it is possible to effectively prevent signal reflection due to resonance and perform good signal conversion from the high-frequency line 1 to the waveguide 6.

また、誘電体層2の下面に導波管6を接合するための下部接地導体層11を形成してもよい。なお、下部接地導体層11は平面透視してスロット5を取り囲むように形成された枠状とするのがよい。   Further, a lower ground conductor layer 11 for joining the waveguide 6 to the lower surface of the dielectric layer 2 may be formed. The lower ground conductor layer 11 is preferably a frame formed so as to surround the slot 5 in a plan view.

誘電体層2を形成する誘電体材料としては、酸化アルミニウム,窒化アルミニウム,窒化珪素,ムライト等を主成分とするセラミック材料、ガラス、ガラスとセラミックフィラーとの混合物を焼成して形成されたガラスセラミック材料、エポキシ樹脂,ポリイミド樹脂,四フッ化エチレン樹脂を始めとするフッ素系樹脂等の有機樹脂系材料、有機樹脂−セラミック(ガラスも含む)複合系材料等が用いられる。   Examples of the dielectric material for forming the dielectric layer 2 include ceramic materials mainly composed of aluminum oxide, aluminum nitride, silicon nitride, mullite, and the like, and glass ceramic formed by firing a mixture of glass and glass and ceramic filler. Materials, organic resin materials such as epoxy resins, polyimide resins, fluororesins such as tetrafluoroethylene resin, and organic resin-ceramic (including glass) composite materials are used.

線路導体3,同一面接地導体層4,貫通導体等のシールド導体部7,下部接地導体層11、ならびに内部接地導体層8を形成する導体材料としては、タングステン,モリブデン,金,銀,銅等を主成分とするメタライズ、あるいは金,銀,銅,アルミニウム等を主成分とする金属箔等が用いられる。   The conductor material for forming the line conductor 3, the same-surface ground conductor layer 4, the shield conductor portion 7 such as the through conductor, the lower ground conductor layer 11, and the internal ground conductor layer 8 includes tungsten, molybdenum, gold, silver, copper, and the like. Or metal foils mainly containing gold, silver, copper, aluminum or the like.

特に、高周波線路−導波管変換器を、高周波部品を搭載する配線基板に内蔵する場合は、誘電体層2を形成する誘電体材料として、誘電正接が小さく、かつ気密封止が可能であることが望ましい。このような誘電体材料としては、酸化アルミニウム質焼結体や窒化アルミニウム質焼結体などのセラミックスやガラスセラミック材料が挙げられる。このような硬質系材料で構成すれば、誘電正接が小さく、かつ搭載した高周波部品を気密に封止することができるので、搭載した高周波部品の信頼性を高める上で好ましい。この場合、導体材料としては、誘電体材料との同時焼成が可能なメタライズ導体を用いることが、気密封止性と生産性を高める上で望ましい。   In particular, when the high-frequency line-waveguide converter is built in a wiring board on which high-frequency components are mounted, the dielectric material for forming the dielectric layer 2 has a small dielectric loss tangent and can be hermetically sealed. It is desirable. Examples of such a dielectric material include ceramics and glass ceramic materials such as an aluminum oxide sintered body and an aluminum nitride sintered body. Such a hard material is preferable in terms of improving the reliability of the mounted high-frequency component because the dielectric loss tangent is small and the mounted high-frequency component can be hermetically sealed. In this case, it is desirable to use a metallized conductor capable of co-firing with a dielectric material as the conductor material in order to improve hermetic sealing and productivity.

本発明の高周波線路−導波管変換器は以下のようにして作製される。例えば誘電体材料に酸化アルミニウム質焼結体を用いる場合であれば、まず酸化アルミニウム,酸化珪素,酸化マグネシウム,酸化カルシウム等の原料粉末に適当な有機溶剤,溶媒を添加混合してスラリー状にし、これを周知のドクターブレード法やカレンダーロール法によりシート状に成形してセラミックグリーンシートを作製する。また、タングステンやモリブデン等の高融点金属,酸化アルミニウム,酸化珪素,酸化マグネシウム,酸化カルシウム等の原料粉末に適当な溶剤,溶媒を添加混合してメタライズペーストを作製する。   The high-frequency line-waveguide converter of the present invention is manufactured as follows. For example, when an aluminum oxide sintered body is used as a dielectric material, first, an appropriate organic solvent or solvent is added to and mixed with raw material powders such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide to form a slurry. This is formed into a sheet shape by a known doctor blade method or calendar roll method to produce a ceramic green sheet. Further, a metallized paste is prepared by adding and mixing an appropriate solvent and solvent to a raw material powder such as refractory metal such as tungsten or molybdenum, aluminum oxide, silicon oxide, magnesium oxide, calcium oxide or the like.

次に、誘電体層2となるセラミックグリーンシートに、例えば打ち抜き法により貫通導体であるシールド導体部7を形成するための貫通孔を形成し、例えば印刷法によりその貫通孔にメタライズペーストを埋め込み、続いて線路導体3や同一面接地導体層4,内部接地導体層8の形状にメタライズペーストを印刷する。また、誘電体層2が複数の誘電体層の積層構造からなる場合には、同様にメタライズペーストが表面に印刷されるとともに貫通孔に埋め込まれたセラミックグリーンシートを積層し、加圧して圧着してもよい。   Next, a through hole for forming the shield conductor portion 7 that is a through conductor is formed in the ceramic green sheet to be the dielectric layer 2 by, for example, a punching method, and a metallized paste is embedded in the through hole by, for example, a printing method, Subsequently, a metallized paste is printed in the shape of the line conductor 3, the same-surface ground conductor layer 4, and the internal ground conductor layer 8. Further, when the dielectric layer 2 has a laminated structure of a plurality of dielectric layers, similarly, a ceramic green sheet having a metallized paste printed on the surface and embedded in the through-holes is laminated, and pressed and pressure-bonded. May be.

そして、これらの誘電体層2となるセラミックグリーンシートを高温(約1600℃)で焼成する。さらに、必要に応じて、線路導体3や同一面接地導体層4,下部接地導体層11等のように上下面に露出する導体の表面に、例えば、ニッケルめっきおよび金めっきを被着させ、下部接地導体層11をベース材13に接続し、ベース材13の下面に導波管6を接続することにより高周波線路−導波管変換器が完成する。   And the ceramic green sheet used as these dielectric material layers 2 is baked at high temperature (about 1600 degreeC). Furthermore, if necessary, for example, nickel plating and gold plating are applied to the surface of the conductor exposed on the upper and lower surfaces such as the line conductor 3, the same-surface ground conductor layer 4, the lower ground conductor layer 11, and the like. The ground conductor layer 11 is connected to the base material 13 and the waveguide 6 is connected to the lower surface of the base material 13 to complete the high-frequency line-waveguide converter.

本発明のシールド導体部7は、スロット5を取り囲むよう誘電体層2の側面または内部に配され、同一面接地導体層4と内部接地導体層8と下部接地導体層11とを電気的に接続している。   The shield conductor portion 7 of the present invention is disposed on the side surface or inside of the dielectric layer 2 so as to surround the slot 5, and electrically connects the same-surface ground conductor layer 4, internal ground conductor layer 8, and lower ground conductor layer 11. is doing.

なお、シールド導体部7は、同一面接地導体層4と内部接地導体層8と下部接地導体層11とを電気的に接続できれば良く、側面導体や貫通導体等、種々の手段が用いられる。例えば、誘電体層2の側面に被着された導体や、誘電体層2の側面の切り欠き部の内壁に導体層が被着されたいわゆるキャスタレーション導体、貫通孔の内壁に導体層が被着されたいわゆるスルーホール導体、貫通孔の内部が導体で充填されたいわゆるビア導体などが挙げられる。   The shield conductor 7 only needs to be able to electrically connect the same-surface ground conductor layer 4, the internal ground conductor layer 8, and the lower ground conductor layer 11, and various means such as side conductors and through conductors are used. For example, a conductor deposited on the side surface of the dielectric layer 2, a so-called castellation conductor in which a conductor layer is deposited on the inner wall of the notch on the side surface of the dielectric layer 2, or a conductor layer is coated on the inner wall of the through hole. Examples include so-called through-hole conductors that are attached, and so-called via conductors in which the insides of the through-holes are filled with a conductor.

ベース材13は、導電性であり、搭載部に搭載される電子素子14や基板の接地導体と電気的に接続され、それらの接地電位を強化する機能を有するとともに、電子素子14や基板の支持部材としても機能する。   The base material 13 is electrically conductive, and is electrically connected to the electronic element 14 mounted on the mounting portion and the ground conductor of the substrate, and has a function of reinforcing the ground potential, and also supports the electronic element 14 and the substrate. It also functions as a member.

このようなベース材13の材料としては、基板の誘電体層2との熱膨張率差を小さくするため、誘電体層2の熱膨張率に近いものがよい。これらの熱膨張率差が大きいと誘電体層2にクラックが発生しやすくなる。   The base material 13 is preferably made of a material having a thermal expansion coefficient close to that of the dielectric layer 2 in order to reduce the difference in thermal expansion coefficient between the dielectric layer 2 and the substrate. When these differences in thermal expansion coefficient are large, cracks are likely to occur in the dielectric layer 2.

また、ベース材13は、シールド導体部7に直接、あるいはシールド導体部7に電気的に接続された下部接地導体層11にろう材等の導電性接合材を介して電気的に接続される。   The base material 13 is electrically connected to the shield conductor portion 7 directly or to the lower ground conductor layer 11 electrically connected to the shield conductor portion 7 via a conductive bonding material such as a brazing material.

ベース材13の貫通孔は平面透視してスロット5や内部接地導体層8の開口を取り囲むように形成される。好ましくは、図2に示すように、ベース材13の上面に基板を取り囲む導電性の壁部13aが形成されているのがよい。これにより、基板内部のシールド性をより強化できる。   The through hole of the base material 13 is formed so as to surround the slot 5 and the opening of the internal ground conductor layer 8 as seen through the plane. Preferably, as shown in FIG. 2, a conductive wall 13 a surrounding the substrate is formed on the upper surface of the base material 13. Thereby, the shielding property inside a board | substrate can be strengthened more.

このような壁部13aはベース材13と一体化されていてもよく、別部材をベース材13の上面に接合してもよい。   Such a wall portion 13 a may be integrated with the base material 13, and another member may be joined to the upper surface of the base material 13.

さらに、電子素子14と高周波線路−導波管変換器とを電気的に接続するワイヤ15に対応する壁部13aの内周面が傾斜している。すなわち、ベース材13の上面に、ワイヤ15に対応する位置であって、上方に向かって基板の側面から遠ざかるように、平面視で基板の側面と平行な方向に形成された傾斜部13bが設けられている。これにより、ワイヤ15とベース材13との間の浮遊容量を漸次変化させることによってインピーダンスの急激な変化を有効に防止でき、ワイヤ15の誘導成分を減少させて反射損失を有効に防止することができる。その結果、電気特性をより向上させることができる。 In addition, the electronic device 14 and the high-frequency line - the inner peripheral surface of the wall portion 13a which corresponds to the wire 15 for electrically connecting the waveguide converter that inclined. That is, an inclined portion 13b formed in a direction parallel to the side surface of the substrate in a plan view is provided on the upper surface of the base material 13 so as to be away from the side surface of the substrate toward the upper side. is not that. Thus, Wa ear 15 and can effectively prevent an abrupt change in impedance by making gradually changes the stray capacitance between the base member 13, to effectively prevent the reflection loss by reducing the inductive component of the wire 15 Can do. As a result, the electrical characteristics can be further improved.

このような傾斜部13bは、縦断面形状が直線状でも曲線状でもよい。また、傾斜部13bは基板の厚さ方向の全体にわたって形成されていてもよく、図2のような上側部のみあるいは下側部のみ等の厚み方向の一部だけに形成されていてもよい。   Such an inclined portion 13b may have a vertical cross-sectional shape that is linear or curved. Further, the inclined portion 13b may be formed over the entire thickness direction of the substrate, or may be formed only in a part in the thickness direction such as only the upper side portion or only the lower side portion as shown in FIG.

導波管6の形状は特に制約はなく、例えば方形導波管として規格化されているWRシリーズを用いると、測定用校正キットが充実しているので種々の特性評価が容易になるが、使用する高周波信号の周波数に応じてシステムの小型軽量化のために導波管6のカットオフが発生しない範囲で小型化した方形導波管を用いてもよい。また、円形導波管を用いてもよい。   The shape of the waveguide 6 is not particularly limited. For example, when a WR series standardized as a rectangular waveguide is used, a variety of measurement calibration kits are available, so that various characteristics can be easily evaluated. In order to reduce the size and weight of the system in accordance with the frequency of the high-frequency signal, a rectangular waveguide that is miniaturized within a range in which the waveguide 6 is not cut off may be used. A circular waveguide may be used.

導波管6は、金属または内面に金属層が形成された誘電体等で構成することができ、例えば、金属を管状に成型したり、セラミックスや樹脂等の誘電体を必要な導波管形状に成型した後に内面を金属で被覆したものが用いられる。なお、電流による導体損低減や腐食防止のために導波管6の内面を金,銀等の貴金属で被覆するとよい。導波管6のベース材13への取り付けは、ろう材による接合やねじによる締め付け等によって行なわれ、導波管6とベース材13とが電気的に接続される。   The waveguide 6 can be composed of a metal or a dielectric having a metal layer formed on the inner surface. For example, the waveguide 6 can be formed into a tubular shape or a dielectric such as ceramics or resin is required. In this case, the inner surface is coated with a metal after being molded. The inner surface of the waveguide 6 may be covered with a noble metal such as gold or silver in order to reduce conductor loss due to current or prevent corrosion. The waveguide 6 is attached to the base material 13 by joining with a brazing material, tightening with screws, or the like, and the waveguide 6 and the base material 13 are electrically connected.

また、スロット5の線路導体3に直交する方向の長さは、高周波線路1を伝送する信号の波長以下であるのがよい。また、スロット5の線路導体3に平行な方向の幅は、高周波線路1を伝送する信号の波長の1/2倍以下であるのがよい。これにより、高周波線路1から導波管6へ電磁波を良好に放射することができる。   The length of the slot 5 in the direction orthogonal to the line conductor 3 is preferably equal to or shorter than the wavelength of the signal transmitted through the high-frequency line 1. Further, the width of the slot 5 in the direction parallel to the line conductor 3 is preferably not more than ½ times the wavelength of the signal transmitted through the high-frequency line 1. Thereby, electromagnetic waves can be radiated from the high-frequency line 1 to the waveguide 6 satisfactorily.

また、誘電体層2の内部に内部接地導体層8がない場合、誘電体層2の厚み、すなわち、高周波線路1と下部接地導体層11との間の間隔は、高周波線路1を伝送する信号の波長の1/2倍以下であるのがよい。また、誘電体層2の内部に内部接地導体層8が一層ある場合、下側の誘電体層2の厚み、すなわち、内部接地導体層8と下部接地導体層11との間の間隔は、高周波線路1を伝送する信号の波長の1/2倍以下であるのがよい。これにより、スロット5から放射されて、誘電体層2の下面と導波管6内部との界面で反射し、誘電体層2上面や内部接地導体層8で再度反射して再び誘電体層2の下面と導波管6内部との界面に戻ってきた反射波と、スロット5から直接誘電体層2の下面と導波管6内部との界面まで伝送してきた直接波とを同位相にすることができ、反射波と直接波とが強め合うために高周波線路1から導波管6への変換効率をより高めることができる。   When the internal ground conductor layer 8 is not present inside the dielectric layer 2, the thickness of the dielectric layer 2, that is, the distance between the high frequency line 1 and the lower ground conductor layer 11 is a signal transmitted through the high frequency line 1. It is good that it is 1/2 times or less of the wavelength. When there is one internal ground conductor layer 8 inside the dielectric layer 2, the thickness of the lower dielectric layer 2, that is, the distance between the internal ground conductor layer 8 and the lower ground conductor layer 11 is high frequency. It is preferable that it is not more than ½ times the wavelength of the signal transmitted through the line 1. As a result, the light is radiated from the slot 5, reflected at the interface between the lower surface of the dielectric layer 2 and the inside of the waveguide 6, reflected again by the upper surface of the dielectric layer 2 and the internal ground conductor layer 8, and again dielectric layer 2. The reflected wave returning to the interface between the lower surface of the waveguide and the inside of the waveguide 6 and the direct wave transmitted directly from the slot 5 to the interface between the lower surface of the dielectric layer 2 and the inside of the waveguide 6 are in phase. In addition, since the reflected wave and the direct wave strengthen each other, the conversion efficiency from the high-frequency line 1 to the waveguide 6 can be further increased.

また、内部接地導体層8の開口形状は、スロット5と相似形であるのがよく、内部接地導体層8の開口面積はスロット5の開口面積の5〜30倍であるのがよい。これにより、高周波線路1から導波管6へのインピーダンスの急激な変化を緩和して、電磁波を良好に伝送することができる。   The opening shape of the internal ground conductor layer 8 is preferably similar to that of the slot 5, and the opening area of the internal ground conductor layer 8 is preferably 5 to 30 times the opening area of the slot 5. Thereby, the rapid change of the impedance from the high frequency line 1 to the waveguide 6 can be relieved, and electromagnetic waves can be transmitted satisfactorily.

そして、本発明の高周波線路−導波管変換器のベース材13の搭載部に半導体素子等の電子素子14をその接地電極がベース材13と電気的に接続されるように導電性接合材を介して取着し、電子素子14の電極と線路導体3とをワイヤ15などで電気的に接続することにより本発明の電子装置となる。   Then, an electronic element 14 such as a semiconductor element is mounted on the mounting portion of the base material 13 of the high-frequency line-waveguide converter of the present invention, and a conductive bonding material is provided so that the ground electrode is electrically connected to the base material 13. And the electrode of the electronic element 14 and the line conductor 3 are electrically connected by a wire 15 or the like to provide the electronic device of the present invention.

なお、本発明は以上の実施の形態の例に限定されるものではなく、本発明の要旨を逸脱しない範囲であれば、種々の変更を行なっても差し支えない。   It should be noted that the present invention is not limited to the embodiments described above, and various modifications may be made without departing from the spirit of the present invention.

例えば、図1,図2では高周波線路1がコプレーナ線路構造の場合の例を示したが、たとえば誘電体層2の上にさらに誘電体層を積層し、この誘電体層の上面に線路導体3を覆うように接地導体層を設けたグランド付きコプレーナ線路構造としてもよく、誘電体層2、線路導体3、同一面接地導体層4、スロット5、導波管6、シールド導体部7、内部接地導体層8、下部接地導体層11の位置関係を図1や図2に示す例と同様にすることにより、同様の効果を得ることができる。   For example, FIGS. 1 and 2 show an example in which the high-frequency line 1 has a coplanar line structure. For example, a dielectric layer is further laminated on the dielectric layer 2, and the line conductor 3 is formed on the upper surface of the dielectric layer. A grounded coplanar line structure having a ground conductor layer so as to cover the dielectric layer 2, the line conductor 3, the coplanar ground conductor layer 4, the slot 5, the waveguide 6, the shield conductor portion 7, and the internal ground The same effect can be obtained by making the positional relationship between the conductor layer 8 and the lower ground conductor layer 11 the same as in the examples shown in FIGS.

本発明の高周波線路−導波管変換器の実施の形態の例を示す平面図である。It is a top view which shows the example of embodiment of the high frequency line-waveguide converter of this invention. 図1の高周波線路−導波管変換器のA−A’線における断面図である。It is sectional drawing in the A-A 'line | wire of the high frequency line-waveguide converter of FIG.

符号の説明Explanation of symbols

1・・・・・高周波線路
2・・・・・誘電体層
3・・・・・線路導体
4・・・・・同一面接地導体層
5・・・・・スロット
6・・・・・導波管
7・・・・・シールド導体部
13・・・・ベース材
13b・・・傾斜部
14・・・・電子素子
DESCRIPTION OF SYMBOLS 1 ... High frequency line 2 ... Dielectric layer 3 ... Line conductor 4 ... Same surface grounding conductor layer 5 ... Slot 6 ... Conduction Wave tube 7... Shield conductor 13... Base material 13 b.

Claims (1)

誘電体層の上面に形成された線路導体および前記誘電体層の上面で前記線路導体の一端部を取り囲むように形成された同一面接地導体層から成る高周波線路と、前記同一面接地導体層に前記線路導体の前記一端部と直交するように形成されて前記線路導体と電磁的に結合されたスロットと、平面透視して前記線路導体の前記一端部および前記スロットを取り囲むように前記誘電体層の側面または内部に配されたシールド導体部とを有する基板と、
電子素子の搭載部を有するとともに貫通孔が形成された金属製のベース材と、
前記搭載部に搭載された電子素子と、
前記ベース材の下面に前記貫通孔と連通するように接続された導波管とを備え、
前記基板は、前記ベース材の上面に、前記貫通孔を塞ぎ、かつ前記貫通孔上に前記線路導体の前記一端部および前記スロットが位置するようにしてろう付けされ、
前記電子素子の電極と前記線路導体とがワイヤを介して電気的に接続され、
前記ベース材の上面に、前記ワイヤと対応する位置であって、かつ上方に向かって前記基板の側面から遠ざかるように、平面視で前記基板の側面と平行な方向に形成された傾斜部が設けられていることを特徴とする電子装置。
A line conductor formed on the upper surface of the dielectric layer, a high-frequency line including a coplanar ground conductor layer formed so as to surround one end portion of the line conductor on the upper surface of the dielectric layer, and the coplanar ground conductor layer A slot formed orthogonal to the one end portion of the line conductor and electromagnetically coupled to the line conductor; and the dielectric layer surrounding the one end portion and the slot of the line conductor in a plan view A substrate having a shield conductor portion disposed on a side surface or inside thereof,
A metal base material having a mounting portion for an electronic element and a through-hole formed therein;
An electronic element mounted on the mounting portion;
A waveguide connected to the lower surface of the base material so as to communicate with the through hole;
The substrate is brazed to the upper surface of the base material so as to close the through hole, and the one end of the line conductor and the slot are positioned on the through hole,
The electrode of the electronic element and the line conductor are electrically connected via a wire,
An inclined portion formed in a direction parallel to the side surface of the substrate in plan view is provided on the upper surface of the base material so as to be away from the side surface of the substrate at a position corresponding to the wire and upward. An electronic device characterized by the above .
JP2005040526A 2005-02-17 2005-02-17 Electronic equipment Expired - Fee Related JP4663351B2 (en)

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Citations (9)

* Cited by examiner, † Cited by third party
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JPS61102054A (en) * 1984-10-25 1986-05-20 Toshiba Corp Lead frame
JPS6317546A (en) * 1986-07-09 1988-01-25 Mitsubishi Electric Corp Semiconductor device
JPH07142668A (en) * 1993-11-12 1995-06-02 Shinko Electric Ind Co Ltd Lead frame, manufacture thereof, and semiconductor device
JPH08241904A (en) * 1995-03-03 1996-09-17 Nippondenso Co Ltd Method for connecting lead wire of electronic device
JP2002093936A (en) * 2000-09-14 2002-03-29 Ibiden Co Ltd Substrate for mounting electronic component
JP2002280809A (en) * 2001-03-21 2002-09-27 Toshiba Corp United structure of high frequency component and high frequency transmission line conversion circuit
JP2004112131A (en) * 2002-09-17 2004-04-08 Nec Corp Flat circuit waveguide connection structure
JP2004153415A (en) * 2002-10-29 2004-05-27 Kyocera Corp High frequency line-waveguide converter
JP2004297465A (en) * 2003-03-27 2004-10-21 Kyocera Corp Package for high frequency

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61102054A (en) * 1984-10-25 1986-05-20 Toshiba Corp Lead frame
JPS6317546A (en) * 1986-07-09 1988-01-25 Mitsubishi Electric Corp Semiconductor device
JPH07142668A (en) * 1993-11-12 1995-06-02 Shinko Electric Ind Co Ltd Lead frame, manufacture thereof, and semiconductor device
JPH08241904A (en) * 1995-03-03 1996-09-17 Nippondenso Co Ltd Method for connecting lead wire of electronic device
JP2002093936A (en) * 2000-09-14 2002-03-29 Ibiden Co Ltd Substrate for mounting electronic component
JP2002280809A (en) * 2001-03-21 2002-09-27 Toshiba Corp United structure of high frequency component and high frequency transmission line conversion circuit
JP2004112131A (en) * 2002-09-17 2004-04-08 Nec Corp Flat circuit waveguide connection structure
JP2004153415A (en) * 2002-10-29 2004-05-27 Kyocera Corp High frequency line-waveguide converter
JP2004297465A (en) * 2003-03-27 2004-10-21 Kyocera Corp Package for high frequency

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