JP2006238055A - High-frequency line/waveguide converter - Google Patents

High-frequency line/waveguide converter Download PDF

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JP2006238055A
JP2006238055A JP2005049768A JP2005049768A JP2006238055A JP 2006238055 A JP2006238055 A JP 2006238055A JP 2005049768 A JP2005049768 A JP 2005049768A JP 2005049768 A JP2005049768 A JP 2005049768A JP 2006238055 A JP2006238055 A JP 2006238055A
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line
layer
slot
conductor
waveguide
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Takashi Kimura
貴司 木村
Yoshinobu Sawa
義信 澤
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Kyocera Corp
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Kyocera Corp
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Abstract

<P>PROBLEM TO BE SOLVED: To provide a high-frequency line/waveguide converter having high conversion efficiency. <P>SOLUTION: The high-frequency line/waveguide converter is provided with: a high-frequency line 1 consisting of a line conductor 3 formed on the upper surface of the dielectric layer 2 and a identical-plane grounding conductor layer 4 formed on the upper surface of the dielectric layer 2 so as to surround the one-end part of the line conductor 3; a slot 5 formed in the identical-plane grounding conductor layer 4 so as to intersect with the one-end part of the line conductor 3 at right angles and electromagnetically coupled with the line conductor 3; a grounding conductor layer 8 where an aperture is formed on the inner layer or lower surface of the dielectric layer 2 so as to surround the slot 5 in plane perspective; and a shield conductor part 7 formed so as to surround the one-end part of the line conductor 3 and the slot 5 in plane perspective and electrically connect the identical-plane grounding conductor layer 4 and the grounding conductor layer 8, wherein the center of gravity of the aperture of the grounding conductor layer 8 is located so as to be deflected to the tip side of the line conductor 3 from the center of gravity of the slot 5. <P>COPYRIGHT: (C)2006,JPO&NCIPI

Description

本発明は、マイクロ波やミリ波の領域において使用される、高周波回路を形成するコプレーナ線路またはグランド付きコプレーナ線路等の高周波線路を導波管に変換し、高周波回路とアンテナあるいは高周波回路間の接続を導波管で行なうことにより、システムの実装、評価を容易に行なえる高周波線路−導波管変換器に関するものである。   The present invention converts a high-frequency line such as a coplanar line forming a high-frequency circuit or a coplanar line with a ground used in a microwave or millimeter-wave region into a waveguide, and connecting the high-frequency circuit and the antenna or the high-frequency circuit. The present invention relates to a high-frequency line-waveguide converter that can easily mount and evaluate a system by performing the above-described process using a waveguide.

近年、情報伝達に用いられる高周波信号は、マイクロ波領域からミリ波領域の周波数までを活用することが検討されている。例えば、ミリ波の高周波信号を用いた応用システムとして車間レーダーが提案されている。このような高周波用のシステムにおいては、高周波信号の周波数が高いことにより、回路を構成するマイクロストリップ線路構造等の高周波線路による高周波信号の減衰が大きくなるという問題点がある。   In recent years, high-frequency signals used for information transmission have been studied to utilize frequencies from the microwave region to the millimeter wave region. For example, an inter-vehicle radar has been proposed as an application system using millimeter-wave high-frequency signals. In such a high-frequency system, there is a problem that the high-frequency signal is attenuated by a high-frequency line such as a microstrip line structure constituting the circuit due to the high frequency of the high-frequency signal.

このようなマイクロストリップ線路構造等の高周波線路に比較して、導波管では高周波信号の伝送損失は小さいことが知られている。例えば、マイクロストリップ線路等による通常の高周波線路のインピーダンス(50Ω)に比較して、導波管のインピーダンス(周波数によって変化するが概略500Ωのオーダーで設計される)は大きく、通常の高周波線路では伝送される信号に対して誘電体中を伝送する電界の寄与が大きいのに対し、導波管ではその誘電体として誘電正接がほぼ0の空気を用いていること、相対的に小さい磁気エネルギーのもととなる導波管の管壁を流れる電流が小さくて良いこと、かつその電流が導波管の管壁の比較的広い面積に流れるため電気抵抗が小さくなり導体損が小さくなる構造になっていることによるものである。   It is known that a transmission loss of a high-frequency signal is small in a waveguide as compared with a high-frequency line such as a microstrip line structure. For example, compared to the impedance (50Ω) of a normal high-frequency line such as a microstrip line, the impedance of the waveguide (which varies depending on the frequency but is designed on the order of about 500Ω) is large. The contribution of the electric field transmitted through the dielectric to the generated signal is large, whereas the waveguide uses air having a dielectric loss tangent of almost zero as its dielectric, The current flowing through the waveguide tube wall can be small, and since the current flows in a relatively large area of the waveguide tube wall, the electrical resistance is reduced and the conductor loss is reduced. Is due to being.

また、導波管同士は通常、ねじで接続される。そのため着脱を容易に行なうことができるため、高周波回路モジュールとアンテナとの接続に導波管を用いれば、組み立て前にそれぞれの導波管ポートを用いてそれぞれの検査を行ない、良品同士を組み合わせて高周波フロントエンドを組み立てることができ、その製造の歩留まりを上げることができる。これらのことから従来、特に伝送距離が長くなることが多い高周波回路モジュールとアンテナとの間の伝送に導波管を用いたフロントエンドが多く採用されてきた。   The waveguides are usually connected with screws. Therefore, since it can be easily attached and detached, if a waveguide is used for the connection between the high-frequency circuit module and the antenna, each inspection is performed using each waveguide port before assembly, and non-defective products are combined. A high-frequency front end can be assembled, and the manufacturing yield can be increased. For these reasons, a front end using a waveguide for transmission between a high-frequency circuit module and an antenna, which often has a long transmission distance, has been conventionally used.

このような高周波フロントエンドとしては、誘電体層と、その表面に形成した線路導体およびその両側に配置された同一面接地導体層から成るコプレーナ線路と、このコプレーナ線路の先端に形成したアンテナとして機能するスロットと、誘電体層の裏面のスロットと対向する位置に接続した導波管と、誘電体層の内部に導波管および同一面接地導体層を接続するように形成したシールド導体部とを具備する高周波線路−導波管変換器が提案されている(下記の特許文献1参照)。   Such a high-frequency front end functions as a dielectric layer, a coplanar line composed of a line conductor formed on the surface of the dielectric layer, and a coplanar ground conductor layer disposed on both sides of the dielectric layer, and an antenna formed on the tip of the coplanar line. And a waveguide connected to a position facing the slot on the back surface of the dielectric layer, and a shield conductor portion formed so as to connect the waveguide and the same-surface grounded conductor layer inside the dielectric layer. A high-frequency line-waveguide converter is proposed (see Patent Document 1 below).

この変換器によれば、スロットから誘電体層と導波管内部との界面までの距離を誘電体層を伝送する電磁波の波長の1/4に設定することにより、スロットから放射され、誘電体層と導波管内部との界面で反射して同一面接地導体層で再度反射して界面に到達した反射波と、スロットから直接界面まで伝送してきた電磁波(直接波)との行路差が電磁波の波長の1/2と等しくなり、反射波の磁界が誘電体層と導波管内部との界面で反射する際に位相が反転することから、界面では直接波と反射波が同位相になって強め合い、導波管へ伝播していくこととなる。   According to this converter, by setting the distance from the slot to the interface between the dielectric layer and the inside of the waveguide to be ¼ of the wavelength of the electromagnetic wave transmitted through the dielectric layer, The path difference between the reflected wave reflected at the interface between the layer and the inside of the waveguide, reflected again from the ground conductor layer on the same plane and reaching the interface, and the electromagnetic wave transmitted directly from the slot to the interface (direct wave) Since the phase is inverted when the reflected wave magnetic field is reflected at the interface between the dielectric layer and the inside of the waveguide, the direct wave and the reflected wave are in phase at the interface. Will propagate to the waveguide.

すなわち、スロットと導波管との間に介在する、厚さを電磁波の波長の1/4に設定した誘電体層は、インピーダンスが互いに異なるスロットと導波管との整合器として機能することになる。
特開2004−32321号公報
That is, the dielectric layer interposed between the slot and the waveguide and having a thickness set to ¼ of the wavelength of the electromagnetic wave functions as a matching unit between the slot and the waveguide having different impedances. Become.
JP 2004-32321 A

しかしながら、高周波線路−導波管変換器は、高周波線路とスロットでは伝送モードが異なるため、各伝送線路の特性インピーダンスが変化し、高周波線路とスロット間での反射損失が増加し、その結果、変換効率が劣化するという問題があった。   However, since the transmission mode of the high-frequency line-waveguide converter differs between the high-frequency line and the slot, the characteristic impedance of each transmission line changes, resulting in an increase in reflection loss between the high-frequency line and the slot. There was a problem that efficiency deteriorated.

本発明は上記問題点を鑑み案出されたもので、その目的は変換効率の高い高周波線路−導波管変換器を提供することにある。   The present invention has been devised in view of the above problems, and an object thereof is to provide a high-frequency line-waveguide converter having high conversion efficiency.

本発明の高周波線路−導波管変換器は、誘電体層の上面に形成された線路導体および前記誘電体層の上面で前記線路導体の一端部を取り囲むように形成された同一面接地導体層から成る高周波線路と、前記同一面接地導体層に前記線路導体の前記一端部と直交するように形成されて前記線路導体と電磁的に結合されたスロットと、前記誘電体層の内層または下面に、平面透視して前記スロットを取り囲むように開口が形成された接地導体層と、平面透視して前記線路導体の前記一端部および前記スロットを取り囲むとともに、前記同一面接地導体層および前記接地導体層を電気的に接続するように形成されたシールド導体部とを具備する高周波線路−導波管変換器であって、前記接地導体層の開口の重心を前記スロットの重心よりも前記線路導体の先端側に位置させたことを特徴とする。   The high-frequency line-waveguide converter of the present invention includes a line conductor formed on an upper surface of a dielectric layer and a coplanar ground conductor layer formed so as to surround one end of the line conductor on the upper surface of the dielectric layer. A high-frequency line comprising: a slot formed on the same-surface ground conductor layer so as to be orthogonal to the one end of the line conductor and electromagnetically coupled to the line conductor; and an inner layer or a lower surface of the dielectric layer A ground conductor layer having an opening formed so as to surround the slot when seen in a plan view, and surrounding the one end portion and the slot of the line conductor when seen in a plan view, and the coplanar ground conductor layer and the ground conductor layer A high-frequency line-waveguide converter comprising a shield conductor portion formed so as to be electrically connected to each other, wherein the center of gravity of the opening of the ground conductor layer is set to be higher than the center of gravity of the slot. Characterized in that is positioned at the front end side of the body.

本発明の高周波線路−導波管変換器は、接地導体層の開口の重心をスロットの重心よりも線路導体の先端側に位置させたことから、線路導体と接地導体層との間に形成される容量が低減し、スロット部のインピーダンスを増加させることができる。よって、高周波線路よりもインピーダンスの低いスロットと高周波線路との大きなインピーダンス差を緩和することができ、急激なインピーダンスの変化を有効に防止して反射損失を抑制することができる。その結果、変換効率を非常に高くすることができる。   The high-frequency line-waveguide converter of the present invention is formed between the line conductor and the ground conductor layer because the center of gravity of the opening of the ground conductor layer is positioned closer to the tip end side of the line conductor than the center of gravity of the slot. Therefore, the impedance of the slot portion can be increased. Therefore, a large impedance difference between the slot having a lower impedance than the high-frequency line and the high-frequency line can be alleviated, and a sudden impedance change can be effectively prevented to suppress reflection loss. As a result, the conversion efficiency can be made very high.

次に、本発明の発明を添付資料に基づき詳細に説明する。図1(a)は本発明の高周波線路−導波管変換器の実施の形態の一例を示す平面図であり、図1(b)は図1(a)の高周波線路−導波管変換器のA−A’線断面図である。図1において、1は高周波線路、2は誘電体層、3は線路導体、4は同一面接地導体層、5は同一面接地導体層4に形成されたスロット、6は導波管、7はシールド導体部、8は接地導体層である。主にこれらにより高周波線路−導波管変換器が形成される。   Next, the invention of the present invention will be described in detail based on the attached material. FIG. 1A is a plan view showing an example of an embodiment of a high-frequency line-waveguide converter of the present invention, and FIG. 1B is a high-frequency line-waveguide converter of FIG. It is AA 'line sectional drawing of. In FIG. 1, 1 is a high-frequency line, 2 is a dielectric layer, 3 is a line conductor, 4 is a ground conductor layer on the same plane, 5 is a slot formed in the ground conductor layer 4 on the same plane, 6 is a waveguide, The shield conductor portion 8 is a ground conductor layer. These mainly form a high-frequency line-waveguide converter.

高周波線路1は、誘電体層2の上面に形成された線路導体3と、線路導体3を取り囲むように形成された同一面接地導体層4とによってコプレーナ線路状に形成されている。また、誘電体層2の上面の同一面接地導体層4にはスロット5が設けられており、線路導体3の一端と電磁的に結合されている。これにより、高周波線路1に伝送された高周波信号は、スロット5から電磁波として、下方に延びるように配置された導波管6内に放射される。   The high-frequency line 1 is formed in a coplanar line shape by a line conductor 3 formed on the upper surface of the dielectric layer 2 and a coplanar ground conductor layer 4 formed so as to surround the line conductor 3. Further, a slot 5 is provided in the same grounded conductor layer 4 on the upper surface of the dielectric layer 2 and is electromagnetically coupled to one end of the line conductor 3. Thereby, the high frequency signal transmitted to the high frequency line 1 is radiated from the slot 5 as an electromagnetic wave into the waveguide 6 arranged to extend downward.

線路導体3は先端が、図1に示すように同一面接地導体層4と短絡して短絡端となっていてもよく、短絡されずに開放端となっていてもよい。   As shown in FIG. 1, the end of the line conductor 3 may be short-circuited with the same-surface ground conductor layer 4 to be a short-circuited end, or may be an open end without being short-circuited.

また、誘電体層2は、その側面に形成された側面導体または図1のような誘電体層2の内部に配された貫通導体から成るシールド導体部7によりシールドされており、スロット5から誘電体層2中に放射された電磁波や誘電体層2の下面と導波管6内部との界面で反射した電磁波が漏れ出すことを防ぎ、変換効率が低下することを防止している。なお、シールド導体部7は、平面透視してスロット5を取り囲むように一定間隔(高周波線路1を伝送する信号の波長の1/4倍以下)を空けて形成されている。   Further, the dielectric layer 2 is shielded by a shield conductor portion 7 formed of a side conductor formed on the side surface or a through conductor disposed inside the dielectric layer 2 as shown in FIG. The electromagnetic wave radiated into the body layer 2 and the electromagnetic wave reflected at the interface between the lower surface of the dielectric layer 2 and the inside of the waveguide 6 are prevented from leaking, and the conversion efficiency is prevented from being lowered. The shield conductor portion 7 is formed with a constant interval (not more than 1/4 times the wavelength of the signal transmitted through the high-frequency line 1) so as to surround the slot 5 when seen in a plan view.

また、誘電体層2の内層や下面には平面透視してスロット5を取り囲むように形成された枠状の接地導体層8が配され、この同一面接地導体層4と接地導体層8がシールド導体7で接続されている。   Further, a frame-like ground conductor layer 8 formed so as to surround the slot 5 in a plan view is disposed on the inner layer and the lower surface of the dielectric layer 2, and the same-surface ground conductor layer 4 and the ground conductor layer 8 are shielded. The conductors 7 are connected.

そして本発明の高周波線路−導波管変換器は、接地導体層8の開口8aの重心がスロット5の重心よりも線路導体3の先端側(図1では同一面接地導体層4との短絡端側)に位置している。すなわち、平面透視して接地導体層8の開口8aは線路導体3の先端(図1では同一面接地導体層4との短絡端)側における開口8aの外周とスロット5の外周との距離Bが、その反対側の距離Aよりも大きくなっている。   In the high-frequency line-waveguide converter of the present invention, the center of gravity of the opening 8a of the ground conductor layer 8 is closer to the tip side of the line conductor 3 than the center of gravity of the slot 5 (in FIG. Side). That is, when viewed through the plane, the opening 8a of the ground conductor layer 8 has a distance B between the outer periphery of the opening 8a and the outer periphery of the slot 5 on the tip end of the line conductor 3 (in FIG. 1, the short-circuited end with the same-surface ground conductor layer 4). The distance A is larger than the distance A on the opposite side.

この構成により、線路導体3と接地導体層4との間に形成される容量が低減し、スロット部のインピーダンスを増加させることができる。よって、高周波線路1よりもインピーダンスの低いスロット5と高周波線路1との大きなインピーダンス差を緩和することができ、急激なインピーダンスの変化を有効に防止して反射損失を抑制することができる。その結果、変換効率を非常に高くすることができる。   With this configuration, the capacitance formed between the line conductor 3 and the ground conductor layer 4 can be reduced, and the impedance of the slot portion can be increased. Therefore, a large impedance difference between the slot 5 having a lower impedance than the high-frequency line 1 and the high-frequency line 1 can be alleviated, and a sudden change in impedance can be effectively prevented to suppress reflection loss. As a result, the conversion efficiency can be made very high.

好ましくは、距離Bが距離Aの1.1〜5.5倍であるのがよい。1.1倍未満であるとスロット5と高周波線路1との大きなインピーダンス差を緩和して、急激なインピーダンスの変化を有効に防止して反射損失を抑制するという効果が小さくなりやすい。5.5倍を超えるとシールド導体部7とスロット5との距離が大きくなって伝送性が低下し変換特性が劣化しやすくなる。   Preferably, the distance B is 1.1 to 5.5 times the distance A. If the ratio is less than 1.1 times, a large impedance difference between the slot 5 and the high-frequency line 1 is relaxed, and an effect of effectively preventing a sudden impedance change and suppressing reflection loss tends to be reduced. If it exceeds 5.5 times, the distance between the shield conductor portion 7 and the slot 5 becomes large, the transmission performance is lowered, and the conversion characteristics are easily deteriorated.

好ましくは接地導体層8を誘電体層2の内層に形成するのがよい。このような多層構造とすることにより、誘電体層2に生じる共振モードであるTMモードの最も磁界が強い、導波管6の内部に接している下側の誘電体層2と、高周波線路1が形成された上側の誘電体層2とを内層の接地導体層8によって分離することができるので、高周波線路1を伝送する電磁界モードであるTEモードとTMモードとが結合して高周波線路1を伝送する信号エネルギーがTMモードへ移行するのを有効に防止することができる。その結果、共振による信号反射を有効に防止して高周波線路1から導波管6への良好な信号変換を行なうことができる。   Preferably, the ground conductor layer 8 is formed in the inner layer of the dielectric layer 2. By adopting such a multilayer structure, the lower dielectric layer 2 in contact with the inside of the waveguide 6 having the strongest magnetic field of the TM mode, which is a resonance mode generated in the dielectric layer 2, and the high-frequency line 1 Can be separated from the upper dielectric layer 2 by the inner ground conductor layer 8, so that the TE mode and the TM mode, which are electromagnetic field modes for transmitting the high-frequency line 1, are combined to form the high-frequency line 1. Can be effectively prevented from shifting to TM mode. As a result, it is possible to effectively prevent signal reflection due to resonance and perform good signal conversion from the high-frequency line 1 to the waveguide 6.

また、接地導体層8を誘電体層2の内層に形成し、さらに誘電体層2の下面に導波管6を接合するための下部接地導体層11を形成してもよい。なお、下部接地導体層11は平面透視してスロット5を取り囲むように形成された枠状とするのがよい。   Alternatively, the ground conductor layer 8 may be formed on the inner layer of the dielectric layer 2, and the lower ground conductor layer 11 for joining the waveguide 6 to the lower surface of the dielectric layer 2 may be formed. The lower ground conductor layer 11 is preferably a frame formed so as to surround the slot 5 in a plan view.

誘電体層2を形成する誘電体材料としては、酸化アルミニウム,窒化アルミニウム,窒化珪素,ムライト等を主成分とするセラミック材料、ガラス、ガラスとセラミックフィラーとの混合物を焼成して形成されたガラスセラミック材料、エポキシ樹脂,ポリイミド樹脂,四フッ化エチレン樹脂を始めとするフッ素系樹脂等の有機樹脂系材料、有機樹脂−セラミック(ガラスも含む)複合系材料等が用いられる。   Examples of the dielectric material for forming the dielectric layer 2 include ceramic materials mainly composed of aluminum oxide, aluminum nitride, silicon nitride, mullite, and the like, and glass ceramic formed by firing a mixture of glass and glass and ceramic filler. Materials, organic resin materials such as epoxy resins, polyimide resins, fluororesins such as tetrafluoroethylene resin, and organic resin-ceramic (including glass) composite materials are used.

線路導体3,同一面接地導体層4,貫通導体等のシールド導体部7,接地導体層8、ならびに下部接地導体層11を形成する導体材料としては、タングステン,モリブデン,金,銀,銅等を主成分とするメタライズ、あるいは金,銀,銅,アルミニウム等を主成分とする金属箔等が用いられる。   As the conductor material for forming the line conductor 3, the same-surface ground conductor layer 4, the shield conductor portion 7 such as the through conductor, the ground conductor layer 8, and the lower ground conductor layer 11, tungsten, molybdenum, gold, silver, copper, and the like are used. Metallization having a main component or metal foil having gold, silver, copper, aluminum or the like as a main component is used.

特に、高周波線路−導波管変換器を、高周波部品を搭載する配線基板に内蔵する場合は、誘電体層2を形成する誘電体材料として、誘電正接が小さく、かつ気密封止が可能であることが望ましい。このような誘電体材料としては、酸化アルミニウム質焼結体や窒化アルミニウム質焼結体などのセラミックスやガラスセラミック材料が挙げられる。このような硬質系材料で構成すれば、誘電正接が小さく、かつ搭載した高周波部品を気密に封止することができるので、搭載した高周波部品の信頼性を高める上で好ましい。この場合、導体材料としては、誘電体材料との同時焼成が可能なメタライズ導体を用いることが、気密封止性と生産性を高める上で望ましい。   In particular, when the high-frequency line-waveguide converter is built in a wiring board on which high-frequency components are mounted, the dielectric material for forming the dielectric layer 2 has a small dielectric loss tangent and can be hermetically sealed. It is desirable. Examples of such a dielectric material include ceramics and glass ceramic materials such as an aluminum oxide sintered body and an aluminum nitride sintered body. Such a hard material is preferable in terms of improving the reliability of the mounted high-frequency component because the dielectric loss tangent is small and the mounted high-frequency component can be hermetically sealed. In this case, it is desirable to use a metallized conductor capable of co-firing with a dielectric material as the conductor material in order to improve hermetic sealing and productivity.

本発明の高周波線路−導波管変換器は以下のようにして作製される。例えば誘電体材料に酸化アルミニウム質焼結体を用いる場合であれば、まず酸化アルミニウム,酸化珪素,酸化マグネシウム,酸化カルシウム等の原料粉末に適当な有機溶剤,溶媒を添加混合してスラリー状にし、これを周知のドクターブレード法やカレンダーロール法によりシート状に成形してセラミックグリーンシートを作製する。また、タングステンやモリブデン等の高融点金属,酸化アルミニウム,酸化珪素,酸化マグネシウム,酸化カルシウム等の原料粉末に適当な溶剤,溶媒を添加混合してメタライズペーストを作製する。   The high-frequency line-waveguide converter of the present invention is manufactured as follows. For example, when an aluminum oxide sintered body is used as a dielectric material, first, an appropriate organic solvent or solvent is added to and mixed with raw material powders such as aluminum oxide, silicon oxide, magnesium oxide, and calcium oxide to form a slurry. This is formed into a sheet shape by a known doctor blade method or calendar roll method to produce a ceramic green sheet. Further, a metallized paste is prepared by adding and mixing an appropriate solvent and solvent to a raw material powder such as refractory metal such as tungsten or molybdenum, aluminum oxide, silicon oxide, magnesium oxide, calcium oxide or the like.

次に、誘電体層2となるセラミックグリーンシートに、例えば打ち抜き法により貫通導体であるシールド導体部7を形成するための貫通孔を形成し、例えば印刷法によりその貫通孔にメタライズペーストを埋め込み、続いて線路導体3や同一面接地導体層4,接地導体層8の形状にメタライズペーストを印刷する。また、誘電体層2が複数の誘電体層の積層構造からなる場合には、同様にメタライズペーストが表面に印刷されるとともに貫通孔に埋め込まれたセラミックグリーンシートを積層し、加圧して圧着してもよい。   Next, a through hole for forming the shield conductor portion 7 that is a through conductor is formed in the ceramic green sheet to be the dielectric layer 2 by, for example, a punching method, and a metallized paste is embedded in the through hole by, for example, a printing method, Subsequently, a metallized paste is printed in the shape of the line conductor 3, the same-surface ground conductor layer 4, and the ground conductor layer 8. Further, when the dielectric layer 2 has a laminated structure of a plurality of dielectric layers, similarly, a metallized paste is printed on the surface and a ceramic green sheet embedded in the through hole is laminated, and pressed and pressed. May be.

そして、これらの誘電体層2となるセラミックグリーンシートを高温(約1600℃)で焼成する。さらに、必要に応じて、線路導体3や同一面接地導体層4,下部接地導体層11等のように上下面に露出する導体の表面に、例えば、ニッケルめっきおよび金めっきを被着させ、下部接地導体層11の外周部に導波管6を接続することにより高周波線路−導波管変換器が完成する。   And the ceramic green sheet used as these dielectric material layers 2 is baked at high temperature (about 1600 degreeC). Furthermore, if necessary, for example, nickel plating and gold plating are applied to the surface of the conductor exposed on the upper and lower surfaces such as the line conductor 3, the same-surface ground conductor layer 4, the lower ground conductor layer 11, and the like. By connecting the waveguide 6 to the outer periphery of the ground conductor layer 11, a high-frequency line-waveguide converter is completed.

本発明のシールド導体部7は、スロット5を取り囲むよう誘電体層2の側面または内部に配され、同一面接地導体層4と接地導体層8と下部接地導体層11とを電気的に接続している。   The shield conductor portion 7 of the present invention is disposed on the side surface or inside of the dielectric layer 2 so as to surround the slot 5, and electrically connects the same-surface ground conductor layer 4, the ground conductor layer 8, and the lower ground conductor layer 11. ing.

なお、シールド導体部7は、同一面接地導体層4と接地導体層8と下部接地導体層11とを電気的に接続できれば良く、側面導体や貫通導体等、種々の手段が用いられる。例えば、誘電体層2の側面に被着された導体や、誘電体層2の側面の切り欠き部の内壁に導体層が被着されたいわゆるキャスタレーション導体、貫通孔の内壁に導体層が被着されたいわゆるスルーホール導体、貫通孔の内部が導体で充填されたいわゆるビア導体などが挙げられる。   The shield conductor portion 7 only needs to be able to electrically connect the same-surface ground conductor layer 4, the ground conductor layer 8, and the lower ground conductor layer 11, and various means such as a side conductor and a through conductor are used. For example, a conductor deposited on the side surface of the dielectric layer 2, a so-called castellation conductor in which a conductor layer is deposited on the inner wall of the notch on the side surface of the dielectric layer 2, or a conductor layer is coated on the inner wall of the through hole. Examples include so-called through-hole conductors attached, and so-called via conductors in which the insides of the through holes are filled with a conductor.

導波管6の形状は特に制約はなく、例えば方形導波管として規格化されているWRシリーズを用いると、測定用校正キットが充実しているので種々の特性評価が容易になるが、使用する高周波信号の周波数に応じてシステムの小型軽量化のために導波管のカットオフが発生しない範囲で小型化した方形導波管を用いてもよい。また、円形導波管を用いてもよい。   The shape of the waveguide 6 is not particularly limited. For example, when a WR series standardized as a rectangular waveguide is used, a variety of measurement calibration kits are available, so that various characteristics can be easily evaluated. In order to reduce the size and weight of the system in accordance with the frequency of the high-frequency signal, a rectangular waveguide that is miniaturized within a range in which the waveguide is not cut off may be used. A circular waveguide may be used.

導波管6は、金属または内面に金属層が形成された誘電体等で構成することができ、例えば、金属を管状に成型したり、セラミックスや樹脂等の誘電体を必要な導波管形状に成型した後に内面を金属で被覆したものが用いられる。なお、電流による導体損低減や腐食防止のために導波管6の内面を金,銀等の貴金属で被覆するとよい。導波管6の下部接地導体層11への取り付けは、ろう材による接合やねじによる締め付け等によって行なわれ、導波管6と下部接地導体層11とが電気的に接続される。   The waveguide 6 can be composed of a metal or a dielectric having a metal layer formed on the inner surface. For example, the waveguide 6 can be formed into a tubular shape or a dielectric such as ceramics or resin is required. In this case, the inner surface is coated with a metal after being molded. The inner surface of the waveguide 6 may be covered with a noble metal such as gold or silver in order to reduce conductor loss due to current or prevent corrosion. The waveguide 6 is attached to the lower ground conductor layer 11 by joining with a brazing material, tightening with a screw, or the like, and the waveguide 6 and the lower ground conductor layer 11 are electrically connected.

また、スロット5の線路導体3に直交する方向の長さは、高周波線路1を伝送する信号の波長以下であるのがよい。また、スロット5の線路導体3に平行な方向の幅は、高周波線路1を伝送する信号の波長の1/2倍以下であるのがよい。これにより、高周波線路1から導波管6へ電磁波を良好に放射することができる。   The length of the slot 5 in the direction orthogonal to the line conductor 3 is preferably equal to or shorter than the wavelength of the signal transmitted through the high-frequency line 1. Further, the width of the slot 5 in the direction parallel to the line conductor 3 is preferably not more than ½ times the wavelength of the signal transmitted through the high-frequency line 1. Thereby, electromagnetic waves can be radiated favorably from the high-frequency line 1 to the waveguide 6.

また、接地導体層8が誘電体層2の内部になく下面にある場合、誘電体層2の厚み、すなわち、高周波線路1と接地導体層8との間の間隔は、高周波線路1を伝送する信号の波長の1/2倍以下であるのがよい。これにより、スロット5から放射されて、誘電体層2の下面と導波管6内部との界面で反射し、誘電体層2の上面で再度反射して再び誘電体層2の下面と導波管6内部との界面に戻ってきた反射波と、スロット5から直接誘電体層2の下面と導波管6内部との界面まで伝送してきた直接波とを同位相にすることができ、反射波と直接波とが強め合うために高周波線路1から導波管6への変換効率をより高めることができる。   When the ground conductor layer 8 is not inside the dielectric layer 2 but on the lower surface, the thickness of the dielectric layer 2, that is, the distance between the high frequency line 1 and the ground conductor layer 8 is transmitted through the high frequency line 1. It is good that it is 1/2 times or less of the wavelength of the signal. As a result, the light is radiated from the slot 5, reflected at the interface between the lower surface of the dielectric layer 2 and the inside of the waveguide 6, reflected again at the upper surface of the dielectric layer 2, and guided again to the lower surface of the dielectric layer 2. The reflected wave returning to the interface with the inside of the tube 6 and the direct wave transmitted directly from the slot 5 to the interface between the lower surface of the dielectric layer 2 and the inside of the waveguide 6 can be in phase and reflected. Since the wave and the direct wave strengthen each other, the conversion efficiency from the high-frequency line 1 to the waveguide 6 can be further increased.

また、誘電体層2の内部に接地導体層8が一層ある場合、下側の誘電体層2の厚み、すなわち、接地導体層4と誘電体層2の下面との間の間隔は、高周波線路1を伝送する信号の波長の1/2倍以下であるのがよい。これにより、スロット5から放射されて、誘電体層2の下面と導波管6内部との界面で反射し、内部の接地導体層8で再度反射して再び誘電体層2の下面と導波管6内部との界面に戻ってきた反射波と、スロット5から直接誘電体層2の下面と導波管6内部との界面まで伝送してきた直接波とを同位相にすることができ、反射波と直接波とが強め合うために高周波線路1から導波管6への変換効率をより高めることができる。   When there is one ground conductor layer 8 inside the dielectric layer 2, the thickness of the lower dielectric layer 2, that is, the distance between the ground conductor layer 4 and the lower surface of the dielectric layer 2 is determined by the high frequency line. 1 or less of the wavelength of the signal transmitting 1 is preferable. As a result, the light is radiated from the slot 5, reflected at the interface between the lower surface of the dielectric layer 2 and the inside of the waveguide 6, reflected again by the internal ground conductor layer 8, and guided again to the lower surface of the dielectric layer 2. The reflected wave returning to the interface with the inside of the tube 6 and the direct wave transmitted directly from the slot 5 to the interface between the lower surface of the dielectric layer 2 and the inside of the waveguide 6 can be in phase and reflected. Since the wave and the direct wave strengthen each other, the conversion efficiency from the high-frequency line 1 to the waveguide 6 can be further increased.

また、接地導体層8の開口8aの形状は、スロット5と相似形であるのがよく、接地導体層8の開口8aの面積はスロット5の開口面積の5〜30倍であるのがよい。これにより、高周波線路1から導波管6へのインピーダンスの急激な変化を緩和して、電磁波を良好に伝送することができる。   Further, the shape of the opening 8a of the ground conductor layer 8 is preferably similar to that of the slot 5, and the area of the opening 8a of the ground conductor layer 8 is preferably 5 to 30 times the opening area of the slot 5. Thereby, the rapid change of the impedance from the high frequency line 1 to the waveguide 6 can be relieved, and electromagnetic waves can be transmitted satisfactorily.

なお、本発明は以上の実施の形態の例に限定されるものではなく、本発明の要旨を逸脱しない範囲であれば、種々の変更を行なっても差し支えない。   It should be noted that the present invention is not limited to the embodiments described above, and various modifications may be made without departing from the spirit of the present invention.

例えば、図1では高周波線路1がコプレーナ線路構造の場合の例を示したが、たとえば誘電体層2の上にさらに誘電体層を積層し、この誘電体層の上面に線路導体3を覆うように接地導体層を設けたグランド付きコプレーナ線路構造としてもよく、誘電体層2、線路導体3、同一面接地導体層4、スロット5、導波管6、シールド導体部7、接地導体層8の位置関係を図1に示す例と同様にすることにより、同様の効果を得ることができる。   For example, FIG. 1 shows an example in which the high-frequency line 1 has a coplanar line structure. For example, a dielectric layer is further laminated on the dielectric layer 2 and the line conductor 3 is covered on the upper surface of the dielectric layer. A grounded coplanar line structure in which a ground conductor layer is provided on the dielectric layer 2, the line conductor 3, the coplanar ground conductor layer 4, the slot 5, the waveguide 6, the shield conductor portion 7, and the ground conductor layer 8. By making the positional relationship similar to the example shown in FIG. 1, the same effect can be obtained.

(a)は本発明の高周波線路−導波管変換器の実施の形態の例を示す平面図、(b)は(a)の高周波線路−導波管変換器のA−A’線における断面図である。(A) is a top view which shows the example of embodiment of the high frequency line-waveguide converter of this invention, (b) is the cross section in the AA 'line of the high frequency line-waveguide converter of (a). FIG.

符号の説明Explanation of symbols

1・・・・・高周波線路
2・・・・・誘電体層
3・・・・・線路導体
4・・・・・同一面接地導体層
5・・・・・スロット
6・・・・・導波管
7・・・・・シールド導体部
8・・・・・接地導体層
DESCRIPTION OF SYMBOLS 1 ... High frequency line 2 ... Dielectric layer 3 ... Line conductor 4 ... Same surface grounding conductor layer 5 ... Slot 6 ... Conduction Wave tube 7 ... Shield conductor 8 ... Ground conductor layer

Claims (1)

誘電体層の上面に形成された線路導体および前記誘電体層の上面で前記線路導体の一端部を取り囲むように形成された同一面接地導体層から成る高周波線路と、前記同一面接地導体層に前記線路導体の前記一端部と直交するように形成されて前記線路導体と電磁的に結合されたスロットと、前記誘電体層の内層または下面に、平面透視して前記スロットを取り囲むように開口が形成された接地導体層と、平面透視して前記線路導体の前記一端部および前記スロットを取り囲むとともに、前記同一面接地導体層および前記接地導体層を電気的に接続するように形成されたシールド導体部とを具備する高周波線路−導波管変換器であって、前記接地導体層の開口の重心を前記スロットの重心よりも前記線路導体の先端側に位置させたことを特徴とする高周波線路−導波管変換器。 A line conductor formed on the top surface of the dielectric layer, a high-frequency line comprising a ground conductor layer on the same plane formed so as to surround one end of the line conductor on the top surface of the dielectric layer, and a ground conductor layer on the same plane A slot that is formed to be orthogonal to the one end of the line conductor and electromagnetically coupled to the line conductor, and an opening is formed in the inner layer or the lower surface of the dielectric layer so as to surround the slot in a plan view. A shield conductor formed so as to surround the one end portion of the line conductor and the slot and to electrically connect the same-surface ground conductor layer and the ground conductor layer, as seen through a plane, and to form the ground conductor layer formed A high-frequency line-waveguide converter, wherein the center of gravity of the opening of the ground conductor layer is positioned closer to the tip side of the line conductor than the center of gravity of the slot. That the high-frequency line - waveguide converter.
JP2005049768A 2005-02-24 2005-02-24 High-frequency line/waveguide converter Pending JP2006238055A (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011078061A1 (en) * 2009-12-22 2011-06-30 京セラ株式会社 Line conversion structure and antenna using same

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011078061A1 (en) * 2009-12-22 2011-06-30 京セラ株式会社 Line conversion structure and antenna using same
JP5509220B2 (en) * 2009-12-22 2014-06-04 京セラ株式会社 Line conversion structure and antenna using the same

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