JP2004297465A - Package for high frequency - Google Patents

Package for high frequency Download PDF

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Publication number
JP2004297465A
JP2004297465A JP2003087350A JP2003087350A JP2004297465A JP 2004297465 A JP2004297465 A JP 2004297465A JP 2003087350 A JP2003087350 A JP 2003087350A JP 2003087350 A JP2003087350 A JP 2003087350A JP 2004297465 A JP2004297465 A JP 2004297465A
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Japan
Prior art keywords
conductor
frequency
frequency line
ground conductor
frame
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Granted
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JP2003087350A
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Japanese (ja)
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JP4002527B2 (en
Inventor
Shinichi Koriyama
慎一 郡山
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Kyocera Corp
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Kyocera Corp
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Priority to JP2003087350A priority Critical patent/JP4002527B2/en
Priority to US10/696,745 priority patent/US7276987B2/en
Priority to DE10350346A priority patent/DE10350346B4/en
Publication of JP2004297465A publication Critical patent/JP2004297465A/en
Priority to US11/841,442 priority patent/US7522014B2/en
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Publication of JP4002527B2 publication Critical patent/JP4002527B2/en
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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805Shape
    • H01L2224/4809Loop shape
    • H01L2224/48091Arched
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48225Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H01L2224/48227Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491Disposition
    • H01L2224/4912Layout
    • H01L2224/49175Parallel arrangements

Abstract

<P>PROBLEM TO BE SOLVED: To provide a package for the high frequency, which can prevent warping and cracking of the package for the high frequency, and in which the transmission of the high frequency signal at the connection part of a conversion substrate and an electronic component for the high frequency is excellent. <P>SOLUTION: A connection terminal 9 is composed of a line conductor 7 for the high frequency, which is arranged adjacently to a mounting part 2 and which is extended to the central part from the outer peripheral part on the upper face of a dielectric substrate 6, and a grounding conductor 8 to the same surface arranged close to the line conductor 7 for the high frequency. The connection terminal 9 is formed to a metal substrate 3 having the mounting part 2 of the electronic component 1 for the high frequency on its upper face. A frame-like grounding conductor 10 is formed on the lower face of the dielectric substrate 6. A slot 11, which is electrically coupled with the end on the central part side of the line conductor 7 for the high frequencies is provided in an internal grounding conductor 12. The internal grounding conductor 12 is formed between the end on the central part side of the line conductor 7 for the high frequency inside the dielectric substrate 6 and the frame-like grounding conductor 10. The conversion substrate 15 is mounted, in which the grounding conductor 8 to the same surface is connected with the internal grounding conductor 12 and a first connection conductor 13, and the frame-like grounding conductor 10 is connected with the internal grounding conductor 12 and a second connection conductor 14. <P>COPYRIGHT: (C)2005,JPO&NCIPI

Description

【0001】
【発明の属する技術分野】
本発明は、マイクロ波やミリ波の領域において使用される高周波用電子部品を導波管と容易に接続するための高周波用パッケージに関するものである。
【0002】
【従来の技術】
近年、高度情報化時代を迎え、情報伝達に用いられる高周波信号は、1〜30GHzのマイクロ波領域から30〜300GHzのミリ波領域の周波数までを活用することが検討されており、例えば、車間レーダーのようなミリ波の高周波信号を用いた応用システムも提案されるようになっている。
【0003】
このような高周波用のシステムにおいては、高周波信号の周波数が高いことにより、回路を構成する高周波線路における高周波信号の減衰が大きくなってしまうという問題点がある。例えば、高周波線路がマイクロストリップ線路構造である場合、誘電体基板における誘電体損は周波数に比例(誘電正接が周波数に独立のとき)して大きくなり、線路導体における導体損は周波数の平方根に比例して大きくなってしまうというものである。このことから、同じマイクロストリップ線路でも、使用する周波数が1GHzから10GHzに高くなると、誘電体損は10倍に、導体損は約3.2倍に大きくなってしまい、この損失を補うために低雑音・高効率・高利得の高価な高周波部品を多用することが必要になり、システムが高価になってしまうという問題点があった。
【0004】
このようなマイクロストリップ線路構造の高周波線路に比較して、導波管では高周波信号の伝送損失は小さいことが知られている。例えば、26GHz〜40GHz帯に用いられる導波管WR−28の損失は40GHzで約0.005dB/cmであり、これはアルミナ基板を用いたマイクロストリップ線路の損失約1dB/cmよりも格段に小さい。これは、マイクロストリップ線路等による通常の高周波線路(一般にインピーダンスは50Ωで設計される)に比較して導波管のインピーダンスが大きく(周波数によって変化するが概略500Ωのオーダーで設計される)、通常の高周波線路では伝送される信号エネルギーに対して誘電体中を伝送する電界エネルギーの寄与が大きいのに対して、導波管ではその誘電体として誘電正接がほぼ0の空気を用いていること、相対的に小さい磁気エネルギーのもととなる導波管の管壁を流れる電流が小さくて良いこと、かつその電流が導波管の管壁の比較的広い面積に流れるため電気抵抗が小さくなり導体損が小さくなる構造になっていることによるものである。
【0005】
また、導波管同士は通常、ねじで接続される。そのため着脱を容易に行なうことができる。例えば、高周波回路モジュールとアンテナとの接続に導波管を用いれば、組み立て前にそれぞれの導波管ポートを用いてそれぞれの検査を行ない、良品同士を組み合わせて高周波フロントエンドを組み立てることができ、その製造の歩留まりを上げることができる。これらのことから従来、特に伝送距離が長くなることが多い高周波回路モジュールとアンテナとの間の伝送に導波管を用いたフロントエンドが多く採用されてきた。
【0006】
図5は、そのような高周波線路−導波管変換器の構造を説明するための断面図である。図5によれば、フロントエンド60は、高周波用パッケージ61とアンテナ62とが導波管63で接続されて構成されている。高周波用パッケージ61は、金属基体64に導波管変換器65を内蔵した変換基板66を接合して構成されている。導波管変換器65は高周波用パッケージ61に搭載された高周波用電子部品67で処理された高周波信号を伝送するための平面回路68を変換基板66内部のグランド層69に形成したスロット70を介して導波管形態71に変換している。
【0007】
この高周波用パッケージ61は、基板66内に導波管変換器65とともに高周波用電子部品67搭載用のエリアも設ける必要があり、高周波用電子部品67の点数が増える場合寸法が大きくなって、変換基板66と金属基体64との熱膨張のミスマッチにより、パッケージ組み立て時に反りや割れが発生する場合があるという問題があった。
【0008】
【特許文献1】
USP6,239,669
【0009】
【発明が解決しようとする課題】
このような問題を解決するために、例えば導波管変換器65のみを含む変換基板66を作製し、それを金属基体64に接合することが考えられる。このようにすれば変換基板66を小さくすることが可能となり、変換基板66と金属基体64との熱膨張のミスマッチによる組立て後の残留応力が小さくなり、高周波用パッケージ61の反りや割れを防ぐことができる。
【0010】
しかし、この構成では変換基板66の上面と高周波用電子部品67の上面を同一面になるようにすれば、それぞれの信号線路同士はワイヤーボンディングやリボンボンディング等によって比較的短い距離で接続できるが、一般に導波管変換器65を含む変換基板66の厚さはマイクロ波やミリ波領域で使用される高周波用電子部品67の厚さよりも圧倒的に厚いので、それぞれの下面にあるグランド同士の接続距離は、信号導体同士の接続よりも長くなってしまい、接続部において信号導体の電位の位相とグランド導体の電位の位相がずれてしまい、高周波信号を良好に伝送することができなくなってしまう場合があった。
【0011】
本発明は上記問題点に鑑み案出されたもので、その目的は、導波管変換器65のみを含む変換基板66を金属基体64に接合して高周波用パッケージ61の反りや割れを防ぎ、かつ変換基板66と高周波用電子部品67との接続部における高周波信号の伝送が良好な高周波用パッケージを提供することにある。
【0012】
【課題を解決するための手段】
本発明の高周波用パッケージは、上面に高周波用電子部品の搭載部を有する金属基体に、前記搭載部に隣接して配置された、下面側の開口に導波管が接続される貫通孔が形成されるとともに、この貫通孔の上面側に、誘電体基板の上面に外周部から中央部に向かう高周波用線路導体とこの高周波用線路導体に近接して配置された同一面接地導体とから成る接続端子部が形成され、前記誘電体基板の下面に前記高周波用線路導体の前記中央部側の端部と対向するように前記貫通孔の上面側の開口に合った形状の枠状接地導体が形成され、前記誘電体基板の内部の前記高周波用線路導体の前記中央部側の端部と前記枠状接地導体との間に、前記高周波用線路導体の前記中央部側の端部と高周波的に結合するスロットが設けられた内部接地導体が形成され、前記同一面接地導体が前記内部接地導体と第1の接続導体で接続され、前記枠状接地導体が前期内部接地導体と第2の接続導体で接続された変換基板を、前記接続端子部を前記搭載部側に位置させるとともに前記枠状接地導体を前記貫通孔の上面側の開口に合わせて接合して成ることを特徴とするものである。
【0013】
本発明の高周波用パッケージによれば、高周波用電子部品の搭載部に隣接して配置され、誘電体基板の上面に外周部から中央部に向かう高周波用線路導体とこの高周波用線路導体に近接して配置された同一面接地導体とから成る接続端子部が形成されるので、変換基板と高周波用電子部品の高周波用線路導体同士および同一面接地導体同士をそれぞれワイヤーボンディングで接続すれば、高周波用線路導体同士の接続距離と同一面接地導体同士の接続距離を概略同程度にすることが可能になり、変換基板と高周波用電子部品との接続部における高周波信号と接地電位の位相が遅延することなく、信号の伝送が良好な高周波用パッケージを提供することができる。
【0014】
また、本発明の高周波用パッケージは、上面に高周波用電子部品の搭載部を有する金属基体に、前記搭載部に隣接して配置された、下面側の開口に導波管が接続される貫通孔が形成されるとともに、この貫通孔の上面側に、誘電体基板の上面に外周部から中央部に向かう高周波用線路導体とこの高周波用線路導体の前記中央部側の端部を取り囲むように同一面に配された同一面接地導体とから成る接続端子部が形成され、前記誘電体基板の下面に前記高周波用線路導体の前記中央部側の端部と対向するように前記貫通孔の上面側の開口に合った形状の枠状接地導体が形成され、前記同一面接地導体に、前記高周波用線路導体の前記中央部側の端部と直交するように形成されて前記高周波用線路導体と高周波的に結合するスロットが設けられ、前記同一面接地導体が前記枠状接地導体と接続導体で接続された変換基板を、前記接続端子部を前記搭載部側に位置させるとともに前記枠状接地導体を前記貫通孔の上面側の開口に合わせて接合して成ることを特徴とするものである。
【0015】
本高周波用パッケージによれば、高周波用電子部品の搭載部に隣接して配置され、誘電体基板の上面に外周部から中央部に向かう高周波用線路導体とこの高周波用線路導体の前記中央部側の端部を取り囲むように同一面に配された同一面接地導体とから成る接続端子部が形成されるので、前記変換基板と前記高周波用電子部品の高周波用線路導体同士および同一面接地導体同士をそれぞれワイヤーボンディングで接続すれば、高周波用線路導体同士の接続距離と同一面接地導体同士の接続距離を概略同程度にすることが可能になり、前記変換基板と前記高周波用電子部品との接続部における高周波信号と接地電位の位相が遅延することなく、信号の伝送が良好な高周波用パッケージを提供することができる。
【0016】
また、本発明の高周波用パッケージは、上面に高周波用電子部品の搭載部を有する金属基体に、前記搭載部に隣接して配置された、下面側の開口に導波管が接続される貫通孔が形成されるとともに、この貫通孔の上面側に、誘電体基板の上面に外周部から中央部に向かう高周波用線路導体とこの高周波用線路導体の前記中央部側の端部を取り囲むように同一面に配された同一面接地導体とから成る接続端子部が形成され、前記誘電体基板の下面に前記高周波用線路導体の前記中央部側の端部と対向するように前記貫通孔の上面側の開口に合った形状の枠状接地導体が形成され、前記同一面接地導体に、前記高周波用線路導体の前記中央部側の端部と直交するように形成されて前記高周波用線路導体と高周波的に結合するスロットが設けられ、前記誘電体基板の内部の前記高周波用線路導体と前記枠状接地導体との間に、前記スロットに対向してこのスロットよりも大きな透過開口が設けられた内部接地導体が形成され、前記同一面接地導体が前記内部接地導体と第1の接続導体で接続され、前記枠状接地導体が前記内部接地導体と第2の接続導体で接続された変換基板を、前記接続端子部を前記搭載部側に位置させるとともに前記枠状接地導体を前記貫通孔の上面側の開口に合わせて接合して成ることを特徴とするものである。
【0017】
本発明の高周波用パッケージによれば、高周波用電子部品の搭載部に隣接して配置され、誘電体基板の上面に外周部から中央部に向かう高周波用線路導体とこの高周波用線路導体の前記中央部側の端部を取り囲むように同一面に配された同一面接地導体とから成る接続端子部が形成されるので、前記変換基板と前記高周波用電子部品の高周波用線路導体同士および同一面接地導体同士をそれぞれワイヤーボンディングで接続すれば、高周波用線路導体同士の接続距離と同一面接地導体同士の接続距離を概略同程度にすることが可能になり、前記変換基板と前記高周波用電子部品との接続部における高周波信号と接地電位の位相が遅延することなく、信号の伝送が良好な高周波用パッケージを提供することができる。
【0018】
また、本発明の高周波用パッケージは、上記構成において、前記高周波用線路導体と前記同一面接地導体との間隔が前記高周波用線路導体により伝送される高周波信号の信号波長の1/4以下であることを特徴とするものである。
【0019】
本発明の高周波用パッケージによれば、上記構成において、高周波用線路導体と同一面接地導体との間隔が高周波用線路導体により伝送される高周波信号の信号波長の1/4以下であるときには、前記変換基板と前記高周波用電子部品の高周波用線路導体同士および同一面接地導体同士をそれぞれワイヤーボンディングで接続した際、高周波用線路導体同士を接続するワイヤーと同一面接地導体同士を接続するワイヤーとの距離を高周波信号の信号波長の1/4程度以下にすることが可能になり、それぞれのワイヤーはお互いに結合して高周波伝送路を形成し、高周波信号の伝送が良好な高周波用パッケージを提供することができる。
【0020】
【発明の実施の形態】
以下、本発明を添付図面に基づき詳細に説明する。
【0021】
図1は本発明の高周波用パッケージの実施の形態の一例を示す図であり、(a)は平面図、(b)は(a)におけるA−AA線断面図である。図1において、1は高周波用電子部品、2は搭載部、3は金属基体、4は導波管、5は貫通孔、6は誘電体基板、7は高周波用線路導体、8は同一面接地導体、9は接続端子部、10は枠状接地導体、11はスロット、12は内部接地導体、13は第1の接続導体、14は第2の接続導体、15は変換基板である。
【0022】
この本発明の高周波用パッケージの例においては、上面に高周波用電子部品1の搭載部2を有する金属基体3に、搭載部2に隣接して配置された、下面側の開口に導波管4が接続される貫通孔5が形成されるとともに、貫通孔5の上面側に、誘電体基板6の上面に外周部から中央部に向かう高周波用線路導体7と高周波用線路導体7に近接して配置された同一面接地導体8とから成る接続端子部9が形成され、誘電体基板6の下面に高周波用線路導体7の中央部側の端部と対向するように貫通孔5の上面側の開口に合った形状の枠状接地導体10が形成され、誘電体基板6の内部の高周波用線路導体7の中央部側の端部と枠状接地導体10との間に、高周波用線路導体7の中央部側の端部と高周波的に結合するスロット11が設けられた内部接地導体12が形成され、同一面接地導体8が内部接地導体12と第1の接続導体13で接続され、枠状接地導体10が内部接地導体12と第2の接続導体14で接続された変換基板15を、接続端子部9を搭載部2側に位置させるとともに枠状接地導体10を貫通孔5の上面側の開口に合わせて接合されている。
【0023】
このような構造とすることにより、変換基板15と高周波用電子部品1を別々に作製し、後で変換基板15の接地と高周波用電子部品1の接地同士を、外部からワイヤーボンディングで接続することが可能となり、従来のように変換基板15の内部接地導体12を延設し、表面に露出させて形成した高周波用電子部品1の搭載部を設けて、変換基板15の接地と高周波用電子部品1の接地を内部接地導体12で予め内部接続する必要がなく、変換基板15を小型化することが可能になり、高周波用パッケージの製造工程における変換基板15と金属基体3との熱膨張ミスマッチを小さくすることができるので、パッケージの反り、割れを防ぐことができる。
【0024】
また、変換基板15の高周波用線路導体7と高周波用電子部品1の高周波用線路導体同士とを、および変換基板15の同一面接地導体9と高周波用電子部品1の接地導体同士とをそれぞれワイヤーボンディングで接続すれば、高周波用線路導体同士の接続距離と同一面接地導体同士の接続距離とをほぼ等しい距離とすることができ、両者の接続部における高周波信号の信号電位の位相と接地電位の位相に差を生じることなく伝送することが可能となって、高周波信号の良好な伝送ができるようになる。
【0025】
これに対し、変換基板15に同一面接地導体8がない場合には、変換基板15の高周波用線路導体7と高周波用電子部品1の高周波用線路導体同士はワイヤーによって比較的短い距離で接続されるが、変換基板15の高周波用線路導体7を伝送する高周波信号の接地電位を与える内部接地導体12へは、高周波用電子部品1の接地部である搭載部2から金属基体3、枠状導体10、第2の接続導体14を経由して到達することになり、高周波用線路導体同士の接続距離に対して非常に長くなってしまい、高周波用電子部品1における接地電位の位相は、信号電位の位相よりも接続距離が長くなる分だけ遅れてしまい、高周波信号が良好に伝送できない場合がある。
【0026】
従来の高周波線路−導波管変換器による構造では、高周波線路−導波管変換器の内部接地導体12が延設され表面に露出された部分に、高周波用電子部品1が搭載され、高周波用電子部品1の接地電位は内部接地導体12によって直接高周波線路−導波管変換器に伝送されるので、信号電位に対する遅延がほとんど生じることがなく、同一面接地導体9を変換基板15の上面に設けて接続する必要がなかった。しかしこの場合、誘電体基板6の内部接地導体12を延設し表面に露出させて、高周波用電子部品1を搭載するための搭載部を高周波線路−導波管変換器とともに一体に形成する必要があり、誘電体基板6が大型化して、金属基体3との接合において反りや割れが発生する場合があった。本発明の高周波パッケージでは、変換基板15に同一面接地導体8を形成することにより、変換基板15と高周波用電子部品1との接地の接続もワイヤーボンディングで可能とし、変換基板15の内部接地導体12を延設し表面に露出させて形成する、高周波用電子部品1の搭載部を不要として、変換基板15を小型化し金属基体3との接合における反りや割れを抑制することができる。
【0027】
また、本発明の高周波用パッケージにおいては、高周波用線路導体7と同一面接地導体8との間隔を高周波用線路導体7により伝送される高周波信号の信号波長の1/4以下にすれば、変換基板15の高周波用線路導体7と高周波用電子部品1の高周波用線路導体同士とを、および変換基板15の同一面接地導体8と高周波用電子部品1の同一面接地導体同士とをそれぞれワイヤーボンディングで接続した際、高周波用線路導体同士を接続するワイヤーと同一面接地導体同士を接続するワイヤーとの距離を高周波信号の信号波長の1/4程度以下にすることが可能になり、それぞれのワイヤーはお互いに電磁界結合して高周波伝送路を形成し、高周波信号の伝送が良好な高周波用パッケージを提供することができる。
【0028】
また、本発明の高周波用パッケージにおいては、同一面接地導体8が高周波用線路導体7の両側に配置された場合、変換基板15と高周波用電子部品1の高周波用線路導体同士を接続するワイヤーと接地導体同士を接続するワイヤーとが、お互いに結合してコプレーナ線路と同様の信号伝送原理の高周波伝送路として高周波信号を伝送し、高周波信号の伝送が良好な高周波用パッケージを提供することができる。
【0029】
また、本発明の高周波用パッケージにおいては、変換基板15を高周波用電子部品1の搭載部2を有する金属基体3に接合しているので、高周波用電子部品1は金属基体3に直接接合されることとなり、高周波用電子部品1の動作による発熱を金属基体3を通して放散することが可能になって、熱放散が良好な高周波用パッケージを提供することができる。
【0030】
そして同一面接地導体8は内部接地導体12と第1の接続導体13で接続されているので、高周波信号は、高周波用線路導体7の外周部から誘電体基板6の中央部に向かって内部接地導体12との間を伝送し、誘電体基板6の中央部側の高周波用線路導体7の端部に高周波的に結合するように設けられたスロット11を通して下面側の導波管4が接続される貫通孔5へ伝送する。そしてスロット11が設けられた内部接地導体12が枠状接地導体10と第2の接続導体14で接続されており、高周波信号は導波管4の方へ向かって伝送する。
【0031】
ここでスロット11は、通常、高周波用線路導体7と高周波的に結合するように高周波用線路導体7と直交する方向への長さ(スロット長さ)を高周波信号波長の概略1/2にすると、スロット11にスロット11中心部の磁界強度が最大になる定在波が発生し、高周波用線路導体7との磁界による結合効率が向上する。また、内部接地導体12と枠状接地導体10との距離は、誘電体基板6中の高周波信号波長の約1/4またはその奇数倍の距離にすると、スロット11から放射され誘電体基板6から導波管4に直接伝送する直接波と、誘電体基板6と導波管4との境界で反射し、内部接地導体12で再び反射して誘電体基板6と導波管4との境界へ到達した反射波の位相が同じになり、互いに強め合うのでスロット11と導波管4との結合効率が向上する。
【0032】
図2は本発明の高周波用パッケージの実施の形態の他の例を示す図であり、(a)は平面図、(b)は(a)におけるB−BB線断面図である。図2において、20は高周波用電子部品、21は搭載部、22は金属基体、23は導波管、24は貫通孔、25は誘電体基板、26は高周波用線路導体、27は同一面接地導体、28は接続端子部、29は枠状接地導体、30はスロット、31は接続導体、32は変換基板である。
【0033】
この本発明の高周波用パッケージの例においては、上面に高周波用電子部品20の搭載部21を有する金属基体22に、搭載部21に隣接して配置された、下面側の開口に導波管23が接続される貫通孔24が形成されるとともに、貫通孔24の上面側に、誘電体基板25の上面に外周部から中央部に向かう高周波用線路導体26と高周波用線路導体26の中央部側の端部を取り囲むように同一面に配された同一面接地導体27とから成る接続端子部28が形成され、誘電体基板25の下面に高周波用線路導体26の中央部側の端部と対向するように貫通孔24の上面側の開口に合った形状の枠状接地導体29が形成され、同一面接地導体27に、高周波用線路導体26の中央部側の端部と直交するように形成されて高周波用線路導体26と高周波的に結合するスロット30が設けられ、同一面接地導体27が枠状接地導体29と接続導体31で接続された変換基板32を、接続端子部28を搭載部21側に位置させるとともに枠状接地導体29を貫通孔24の上面側の開口に合わせて接合されている。
【0034】
このような構造とすることにより、変換基板32の接地と高周波用電子部品20の接地を、ワイヤーボンディングで接続することが可能となり、従来のように誘電体基板25を延設して形成した高周波用電子部品20の搭載部を設ける必要がなく、変換基板32を小型化することが可能になり、高周波用パッケージの製造工程における変換基板32と金属基体22との熱膨張ミスマッチを小さくすることができるので、パッケージの反り、割れを防ぐことができる。
【0035】
また、変換基板32の高周波用線路導体26と高周波用電子部品20の高周波用線路導体同士とを、および変換基板32の同一面接地導体27と高周波用電子部品20の接地導体同士とをそれぞれワイヤーボンディングで接続すれば、高周波用線路導体同士の接続距離と同一面接地導体同士の接続距離をほぼ等しい距離とすることができ、両者の接続部における高周波信号の信号電位の位相と接地電位の位相に差を生じることなく伝送することが可能となって、高周波信号の良好な伝送ができるようになる。
【0036】
また、本発明の高周波用パッケージにおいては、高周波用線路導体26と同一面接地導体27との間隔を高周波用線路導体26により伝送される高周波信号の信号波長の1/4以下にすれば、変換基板32の高周波用線路導体7と高周波用電子部品20の高周波用線路導体同士とを、および変換基板32の同一面接地導体27と高周波用電子部品20の同一面接地導体同士とをそれぞれワイヤーボンディングで接続した際、高周波用線路導体同士を接続するワイヤーと同一面接地導体同士を接続するワイヤーとの距離を高周波信号の信号波長の1/4程度以下にすることが可能になり、それぞれのワイヤーはお互いに電磁界結合して高周波伝送路を形成し、高周波信号の伝送が良好な高周波用パッケージを提供することができる。
【0037】
また、本発明の高周波用パッケージにおいては、変換基板32の上面の高周波線路として高周波用線路導体26と同一面接地導体27とからなるコプレーナ線路を用いているので、変換基板32の高周波用線路導体26と高周波用電子部品20の高周波用線路導体同士とを、および同一面接地導体27と高周波用電子部品20の同一面接地導体同士とをそれぞれワイヤーボンディングで接続した際、高周波用電子部品20の同一面接地導体の接地電位は変換基板32のコプレーナ線路の同一面接地導体27にワイヤーによって直接伝送されるので、高周波用電子部品20の高周波用線路導体の信号電位の伝送に対して全く遅延がなく、高周波信号の伝送が良好な高周波用パッケージを提供することができる。
【0038】
また、本発明の高周波用パッケージにおいては、変換基板32の上面の高周波線路を導波管23に変換する際に重要な役割を果たすスロット30が変換基板32の上面に形成されている。このスロット30の長さと幅は、高周波線路を導波管23に変換する変換効率に影響し、スロット30の長さを高周波信号波長の概略1/2とすれば、スロット30にスロット30中心部の磁界強度が最大になる定在波が発生し、高周波線路との磁界による結合効率が向上する。スロット30の幅を高周波線路のインピーダンスと同じになるように形成すれば、高周波線路とスロット30とのインピーダンスミスマッチがなく、信号周波数において高周波線路との結合効率が向上する。
【0039】
また、スロット30の幅を高周波線路のインピーダンスよりも大きくなるように形成すれば、信号周波数においてインピーダンスマッチング状態からずれ、高周波線路との結合効率が若干減少するが、信号周波数近傍において周波数が変化してもインピーダンスミスマッチの位相が変化するだけで、インピーダンスミスマッチの大きさはあまり変化せず、高周波線路との結合効率が高い状態が維持されて結合するので周波数帯域が広くなる。
【0040】
また、この構成のパッケージとすることにより、スロットの寸法を外観検査することが可能となり、高周波線路−導波管変換効率が良好な高周波用パッケージを提供することができる。
【0041】
そして、スロット30で高周波線路より変換された高周波信号は、本発明の実施の形態の一例におけると同様に導波管23へと伝送する。同一面接地導体27と高周波用線路導体26と枠状接地導体29との距離は、誘電体基板25中における高周波信号波長の約1/4またはその奇数倍に設定すれば、スロット30から放射され誘電体基板25から導波管23に直接伝送する直接波と、誘電体基板25と導波管23との境界で反射し、同一面接地導体27で再び反射して誘電体基板25と導波管23との境界へ到達した反射波の位相が同じになり、互いに強め合うので、高周波信号は、効率良く変換されて導波管に伝送される。
【0042】
図3は本発明の高周波用パッケージの実施の形態のさらに他の例を示す図であり、(a)は平面図、(b)は(a)におけるC−CC線断面図である。図3において、40は高周波用電子部品、41は第2の高周波用電子部品、42は搭載部、43は金属基体、44は導波管、45は貫通孔、46は誘電体基板、47は高周波用線路導体、48は同一面接地導体、49は接続端子部、50は枠状接地導体、51はスロット、52は透過開口、53は内部接地導体、54は第1の接続導体、55は第2の接続導体、56は変換基板である。
【0043】
この本発明の高周波用パッケージの例においては、上面に高周波用電子部品40・41の搭載部42を有する金属基体43に、搭載部42に隣接して配置された、下面側の開口に導波管44が接続される貫通孔45が形成されるとともに、貫通孔45の上面側に、誘電体基板46の上面に外周部から中央部に向かう高周波用線路導体47と高周波用線路導体47の中央部側の端部を取り囲むように同一面に配された同一面接地導体48とから成る接続端子部49が形成され、誘電体基板46の下面に高周波用線路導体47の中央部側の端部と対向するように貫通孔45の上面側の開口に合った形状の枠状接地導体50が形成され、同一面接地導体48に、高周波用線路導体47の中央部側の端部と直交するように形成されて高周波用線路導体47と高周波的に結合するスロット51が設けられ、誘電体基板46の内部の高周波用線路導体47と枠状接地導体50との間に、スロット51に対向してスロット51よりも大きな透過開口52が設けられた内部接地導体53が形成され、同一面接地導体48が内部接地導体53と第1の接続導体54で接続され、枠状接地導体50が内部接地導体53と第2の接続導体55で接続された変換基板56を、接続端子部49を搭載部42側に位置させるとともに枠状接地導体50を貫通孔45の上面側の開口に合わせて接合されている。
【0044】
このような構造とすることにより、変換基板56の接地と高周波用電子部品40・41の接地を、ワイヤーボンディングで接続することが可能となり、従来のように変換基板56の内部接地導体53を延設し、表面に露出させて形成した高周波用電子部品40・41の搭載部を設ける必要がなく、変換基板56を小型化することが可能になり、高周波用パッケージの製造工程における変換基板56と金属基体43との熱膨張ミスマッチを小さくすることができるので、パッケージの反り、割れを防ぐことができる。
【0045】
また、変換基板56の高周波用線路導体47と高周波用電子部品40の高周波用線路導体との接続距離と、変換基板56の同一面接地導体48と高周波用電子部品40の同一面接地導体との接続距離をほぼ等しい距離とすることができ、両者の接続部における高周波信号の信号電位と接地電位の位相を乱すことなく伝送することが可能となって、高周波信号の良好な伝送ができるようになる。
【0046】
この場合、高周波用線路導体47と同一面接地導体48とからなるコプレーナ線路型の高周波伝送路から、内部接地導体53と第2の接続導体55とに囲まれた誘電体導波管部が内部接地導体53によってシールドされて、誘電体導波管部における電磁界共振モードが、高周波伝送路に生じる電磁界伝送モードと分離されることとなり、高周波用線路導体47と同一面接地導体48とからなるコプレーナ線路型の高周波伝送路を伝送する高周波信号が、内部接地導体53と第2の接続導体55とに囲まれた誘電体導波管部に不要な共振を引き起こす可能性がなくなり、コプレーナ線路型の高周波伝送路から導波管への良好な変換ができるようになる。
【0047】
また、本発明の高周波用パッケージにおいては、高周波用電子部品40の上面に、高周波用電子部品40の高周波用線路導体に対応する部分に信号周波数における電磁波が通ることができない小さな開口(遮断周波数が信号周波数より高い開口)を有するシールド板を載置すれば、変換基板56の搭載領域と、高周波用電子部品41の搭載領域が高周波的にシールドされ、不要信号に対するアイソレーション特性が良好な高周波用パッケージを提供することができる。
【0048】
また、同一面接地導体を有しない第2の高周波用電子部品41を搭載する場合であっても、変換基板56と第2の高周波用部品41との間に高周波用電子部品40のような同一面接地導体を有する部品を配して、それぞれをワイヤーボンディング接続することにより、変換基板56と第2の高周波用部品41との間の高周波信号の良好な伝送ができるようになる。
【0049】
また、本発明の高周波用パッケージにおいては、高周波用線路導体47と同一面接地導体48との間隔を高周波用線路導体47により伝送される高周波信号の信号波長の1/4以下にすれば、変換基板56と高周波用電子部品40とをワイヤーボンディングで接続した際、高周波用線路導体同士を接続するワイヤーと接地導体同士を接続するワイヤーとの距離を高周波信号の信号波長の1/4程度以下にすることが可能になり、お互いに電磁界結合して高周波伝送路を形成し、高周波信号の伝送が良好な高周波用パッケージを提供することができる。
【0050】
誘電体基板6・25・46を形成する誘電体材料としては、酸化アルミニウム・窒化アルミニウム・窒化珪素・ムライト等を主成分とするセラミック材料・ガラス・あるいはガラスとセラミックフィラーとの混合物を焼成して形成されたガラスセラミック材料・エポキシ樹脂・ポリイミド樹脂・四フッ化エチレン樹脂を始めとするフッ素系樹脂等の有機樹脂系材料・有機樹脂−セラミック(ガラスも含む)複合系材料等が用いられる。
【0051】
高周波用線路導体7・26・47と同一面接地導体8・27・48と枠状接地導体10・29・50と内部接地導体12・53と第1の接続導体13・54と第2の接続導体14・55ならびに接続導体31を形成する導体材料としては、タングステン・モリブデン・金・銀・銅等を主成分とするメタライズ、あるいは金・銀・銅・アルミニウム等を主成分とする金属箔等が用いられる。
【0052】
特に、高周波用パッケージを、電子部品を収納、封止する場合は、誘電体基板6・25・46を形成する誘電体材料としては、誘電正接が小さく、かつ気密封止が可能であることが望ましい。特に望ましい誘電体材料としては、酸化アルミニウム・窒化アルミニウム・ガラスセラミック材料の群から選ばれる少なくとも1種の無機材料が挙げられる。このような硬質系材料で構成すれば、誘電正接が小さく、かつ搭載した高周波部品を気密封止することができるので、搭載した高周波部品の信頼性を高める上で好ましい。この場合、導体材料としては、誘電体材料との同時焼成が可能なメタライズ導体を用いることが、気密封止性と生産性の上で望ましい。
【0053】
金属基体3・22・43を形成する金属材料としては、鉄・コバルト・ニッケル・タングステン・モリブデン・銅等を主成分とする合金・化合物・複合材料等が用いられる。
【0054】
本発明の高周波用パッケージは以下のようにして作製される。例えば誘電体基板材料に酸化アルミニウム質焼結体を用いる場合であれば、まず酸化アルミニウム・酸化珪素・酸化マグネシウム・酸化カルシウム等の原料粉末に適当な有機溶剤・溶媒を添加混合してスラリー状にし、これを従来周知のドクターブレード法やカレンダーロール法によりシート状に成形してセラミックグリーンシートを作製する。また、タングステンやモリブデン等の高融点金属・酸化アルミニウム・酸化珪素・酸化マグネシウム・酸化カルシウム等の原料粉末に適当な有機溶剤・溶媒を添加混合してメタライズペーストを作製する。次に、セラミックグリーンシートに、例えば打ち抜き法によりビアホール導体としての第1の接続導体13・54、第2の接続導体14・55、接続導体31を形成するための貫通孔を形成し、例えば印刷法により、その貫通孔にメタライズペーストを埋め込み、続いて高周波用線路導体7・26・47、同一面接地導体8・27・48、枠状接地導体10・29・50、内部接地導体12・53の形状にメタライズペーストを印刷する。誘電体基板6・25・46が複数の誘電体層の積層構造からなる場合には、これら導体が埋め込み・印刷されたセラミックグリーンシートを積層し、加圧して圧着し、高温(約1600℃)で焼成する。さらに、高周波用線路導体7・26・47や同一面接地導体8・27・48や枠状接地導体10・29・50等の表面に露出する導体の表面には、その後の組立てに応じてニッケルや金めっきを被着させて変換基板15・32・56とする。
【0055】
変換基板15・32・56は金属基体3・22・43の導波管4・23・44が接続される貫通孔5・24・45の上面側の開口に銀銅ろうや金錫ろう等のろう材で接合される。ろう材が銀銅ろうの場合、変換基板15・32・55と金属基体3・22・43はニッケルめっき仕上げの状態で接合するため、接合後にニッケル、金めっきを被着させて仕上げる。ろう材が金錫ろうの場合、変換基板15・32・56と金属基体3・22・43はニッケル、金めっき仕上げの状態で接合するため、金属基体接合後は特別なめっきは施さない。
【0056】
この本発明の高周波用パッケージの例においては、導波管4・23・44として方形導波管の場合を示したが、導波管4・23・44の形状は特に制約はなく、例えば円形導波管を用いてもよい。
【0057】
なお、本発明は以上の実施の形態の例に限定されるものではなく、本発明の要旨を逸脱しない範囲であれば、種々の変更を行なっても差し支えない。
【0058】
例えば、図1では高周波用線路導体7とスロット11とを電磁結合させるために、高周波用線路導体7の誘電体基板6の中央側の端部を開放した例を示したが、高周波用線路導体7の誘電体基板6の中央側の端部を、スロット11近傍においてビアホール導体等で内部接地導体12に短絡して、電磁結合させても良い。
【0059】
また、図2では高周波用線路導体26とスロット30とを電磁結合させるために、高周波用線路導体26の誘電体基板25の中央側の端部をスロット30に短絡した例を示したが、高周波用線路導体26の誘電体基板25の中央側の端部を、図4に示すように開放して、電磁結合させても良い。
【0060】
【発明の効果】
本発明の高周波用パッケージによれば、高周波用電子部品の搭載部に隣接して配置され、誘電体基板の上面に外周部から中央部に向かう高周波用線路導体とこの高周波用線路導体に近接して配置された同一面接地導体とから成る接続端子部が形成されるので、変換基板と高周波用電子部品の高周波用線路導体同士および同一面接地導体同士をそれぞれワイヤーボンディングで接続すれば、高周波用線路導体同士の接続距離と同一面接地導体同士の接続距離を概略同程度にすることが可能になり、変換基板と高周波用電子部品との接続部における高周波信号と接地電位の位相が遅延することなく、信号の伝送が良好な高周波用パッケージを提供することができる。
【0061】
また、本発明の高周波パッケージによれば、高周波電子部品搭載部と変換基板を分割することができるので、変換基板を小型化することが可能になり、基板と金属基体との熱膨張率の差による応力を減らすことができてパッケージの反り、割れを防ぐことができる。
【0062】
また、本発明の高周波用パッケージによれば、内部接地導体と第2の接続導体とに囲まれた誘電体導波管部が、内部接地導体によって上面の高周波用線路導体部に生じる高周波電磁界よりシールドされる。たとえば高周波用線路導体部では高周波用線路導体を周回する磁界が発生するが、この磁界の一部は、誘電体導波管部における共振モードの1つであるTMモードの磁界と一致しており、これら2つの磁界を内部接地導体でシールドすることにより、誘電体導波管部に不要な共振を引き起こす可能性が減って導波管への良好な変換ができるようになる。
【0063】
また、本発明の高周波用パッケージによれば、高周波用線路導体と同一面接地導体との間隔が高周波用線路導体により伝送される高周波信号の信号波長の1/4以下であるときには、前記変換基板と前記高周波用電子部品の高周波用線路導体同士および同一面接地導体同士をそれぞれワイヤーボンディングで接続した際、高周波用線路導体同士を接続するワイヤーと同一面接地導体同士を接続するワイヤーとの距離を高周波信号の信号波長の1/4程度以下にすることが可能になり、それぞれのワイヤーはお互いに電磁界結合して高周波伝送路を形成し、高周波信号の伝送が良好な高周波用パッケージを提供することができる。
【図面の簡単な説明】
【図1】本発明の高周波用パッケージの実施の形態の一例を示す図であり、(a)は平面図、(b)は(a)におけるA−AA線断面図である。
【図2】本発明の高周波用パッケージの実施の形態の他の例を示す図であり、(a)は平面図、(b)は(a)におけるB−BB線断面図である。
【図3】本発明の高周波用パッケージの実施の形態の他の例を示す図であり、(a)は平面図、(b)は(a)におけるC−CC線断面図である。
【図4】本発明の高周波用配線パッケージの変換基板の高周波線路導体の形態の他の例を示す平面図である。
【図5】従来の高周波線路−導波管変換器の例を示す断面図である。
【符号の説明】
1・20・40・41・・高周波用電子部品
2・21・42・・・・搭載部
3・22・43・・・・金属基体
4・23・44・・・・導波管
5・24・45・・・・貫通孔
6・25・46・・・・誘電体基板
7・26・47・・・・高周波用線路導体
8・27・48・・・・同一面接地導体
9・28・49・・・・接続端子部
10・29・50・・・・枠状接地導体
11・30・51・・・・スロット
12・53・・・・・・内部接地導体
13・54・・・・・・第1の接続導体
14・55・・・・・・第2の接地導体
15・32・56・・・・変換基板
31・・・・・・・・接続導体
52・・・・・・・・透過開口
[0001]
TECHNICAL FIELD OF THE INVENTION
The present invention relates to a high-frequency package for easily connecting a high-frequency electronic component used in a microwave or millimeter-wave region to a waveguide.
[0002]
[Prior art]
In recent years, with the era of advanced information technology, it has been studied to utilize a high frequency signal used for information transmission from a microwave region of 1 to 30 GHz to a millimeter wave region of 30 to 300 GHz. Application systems using a millimeter-wave high-frequency signal such as described above have also been proposed.
[0003]
In such a high-frequency system, there is a problem that the attenuation of the high-frequency signal in the high-frequency line constituting the circuit increases due to the high frequency of the high-frequency signal. For example, when the high-frequency line has a microstrip line structure, the dielectric loss in the dielectric substrate increases in proportion to the frequency (when the dielectric loss tangent is independent of the frequency), and the conductor loss in the line conductor is proportional to the square root of the frequency. It becomes bigger. Thus, even with the same microstrip line, when the frequency used increases from 1 GHz to 10 GHz, the dielectric loss increases by a factor of 10 and the conductor loss increases by approximately 3.2 times. It is necessary to frequently use expensive high-frequency components with high noise, high efficiency, and high gain, which causes a problem that the system becomes expensive.
[0004]
It is known that the transmission loss of a high-frequency signal is smaller in a waveguide than in a high-frequency line having such a microstrip line structure. For example, the loss of the waveguide WR-28 used in the 26 GHz to 40 GHz band is about 0.005 dB / cm at 40 GHz, which is much smaller than the loss of about 1 dB / cm of the microstrip line using the alumina substrate. . This is because the impedance of the waveguide is larger than that of a normal high-frequency line such as a microstrip line or the like (generally, the impedance is designed at 50Ω) (it varies with the frequency, but is designed on the order of about 500Ω). In the high-frequency line, the electric field energy transmitted through the dielectric greatly contributes to the transmitted signal energy, while the waveguide uses air having a dielectric loss tangent of almost 0 as the dielectric, The current flowing through the wall of the waveguide, which is a source of relatively small magnetic energy, can be small, and the current flows over a relatively large area of the wall of the waveguide. This is due to the structure in which the loss is reduced.
[0005]
Further, the waveguides are usually connected by screws. Therefore, attachment and detachment can be easily performed. For example, if a waveguide is used for the connection between the high-frequency circuit module and the antenna, each inspection is performed using each waveguide port before assembly, and a high-frequency front end can be assembled by combining non-defective products. The production yield can be increased. For these reasons, a front end using a waveguide has been often used for transmission between a high-frequency circuit module and an antenna, which often has a long transmission distance.
[0006]
FIG. 5 is a cross-sectional view for explaining the structure of such a high-frequency line-waveguide converter. According to FIG. 5, the front end 60 is configured by connecting a high-frequency package 61 and an antenna 62 via a waveguide 63. The high-frequency package 61 is configured by joining a conversion substrate 66 having a built-in waveguide converter 65 to a metal base 64. The waveguide converter 65 has a planar circuit 68 for transmitting a high-frequency signal processed by the high-frequency electronic component 67 mounted on the high-frequency package 61 via a slot 70 formed in a ground layer 69 inside the conversion board 66. To a waveguide form 71.
[0007]
The high-frequency package 61 also needs to provide an area for mounting the high-frequency electronic components 67 together with the waveguide converter 65 in the substrate 66. When the number of high-frequency electronic components 67 increases, the size increases, and There is a problem that warpage or cracking may occur during package assembly due to a mismatch in thermal expansion between the substrate 66 and the metal base 64.
[0008]
[Patent Document 1]
USP 6,239,669
[0009]
[Problems to be solved by the invention]
In order to solve such a problem, for example, it is conceivable that a conversion substrate 66 including only the waveguide converter 65 is manufactured and bonded to the metal base 64. This makes it possible to reduce the size of the conversion board 66, reduce the residual stress after assembly due to a thermal expansion mismatch between the conversion board 66 and the metal base 64, and prevent the high-frequency package 61 from warping or cracking. Can be.
[0010]
However, in this configuration, if the upper surface of the conversion board 66 and the upper surface of the high-frequency electronic component 67 are made to be on the same plane, the respective signal lines can be connected to each other at a relatively short distance by wire bonding, ribbon bonding, or the like. Generally, the thickness of the conversion board 66 including the waveguide converter 65 is much larger than the thickness of the high-frequency electronic component 67 used in the microwave or millimeter wave region, so that the connection between the grounds on the lower surfaces of the respective components is large. When the distance is longer than the connection between the signal conductors, the phase of the potential of the signal conductor and the phase of the potential of the ground conductor are shifted at the connection part, and high-frequency signals cannot be transmitted well. was there.
[0011]
The present invention has been devised in view of the above problems, and its purpose is to join a conversion board 66 including only a waveguide converter 65 to a metal base 64 to prevent warping and cracking of the high-frequency package 61, Another object of the present invention is to provide a high-frequency package in which a high-frequency signal is transmitted at a connection between the conversion board 66 and the high-frequency electronic component 67.
[0012]
[Means for Solving the Problems]
In the high-frequency package according to the present invention, a through-hole is formed in a metal base having a mounting portion for high-frequency electronic components on an upper surface, the through-hole disposed adjacent to the mounting portion and connected to a waveguide at an opening on a lower surface side. In addition, on the upper surface side of the through hole, a connection comprising a high-frequency line conductor extending from the outer peripheral portion to the center portion on the upper surface of the dielectric substrate, and a coplanar ground conductor arranged close to the high-frequency line conductor A terminal portion is formed, and a frame-shaped grounding conductor is formed on the lower surface of the dielectric substrate so as to face the opening on the upper surface side of the through-hole so as to face the end of the high-frequency line conductor on the central portion side. Between the end of the high-frequency line conductor on the central portion side and the frame-shaped grounding conductor inside the dielectric substrate, the end of the high-frequency line conductor on the central portion side in high frequency. The inner ground conductor with the slot to be connected is shaped A conversion board in which the same-plane ground conductor is connected to the internal ground conductor by a first connection conductor, and the frame-shaped ground conductor is connected to the internal ground conductor by a second connection conductor; And the frame-shaped ground conductor is joined to the through-hole so as to match the opening on the upper surface side of the through-hole.
[0013]
According to the high-frequency package of the present invention, the high-frequency line conductor is disposed adjacent to the mounting portion of the high-frequency electronic component, and is located on the upper surface of the dielectric substrate from the outer peripheral portion toward the central portion. A connection terminal portion formed of the same-surface ground conductor arranged in the same direction is formed. If the conversion substrate and the high-frequency line conductors of the high-frequency electronic component and the same-plane ground conductor are connected by wire bonding, respectively, The connection distance between the line conductors and the connection distance between the ground conductors on the same plane can be made substantially the same, and the phase of the high-frequency signal and the ground potential at the connection between the conversion board and the high-frequency electronic component is delayed. Therefore, a high-frequency package with good signal transmission can be provided.
[0014]
Further, the high-frequency package according to the present invention has a through-hole in which a waveguide is connected to an opening on a lower surface side, which is disposed adjacent to the mounting portion, on a metal base having a mounting portion for high-frequency electronic components on an upper surface. Is formed on the upper surface side of the through hole, and the same as the high-frequency line conductor extending from the outer peripheral portion toward the central portion on the upper surface of the dielectric substrate so as to surround the end portion on the central portion side of the high-frequency line conductor. A connection terminal portion formed of the same-surface ground conductor disposed on the surface is formed, and an upper surface of the through hole is formed on a lower surface of the dielectric substrate so as to face an end of the high-frequency line conductor on the central portion side. A frame-shaped ground conductor having a shape matching the opening of the high-frequency line conductor is formed on the same-plane ground conductor so as to be orthogonal to the end of the high-frequency line conductor on the center side. Is provided with a slot for coupling The conversion board in which the same-surface ground conductor is connected to the frame-shaped ground conductor and the connection conductor is provided, and the connection terminal portion is positioned on the mounting portion side, and the frame-shaped ground conductor is placed in an opening on the upper surface side of the through hole. It is characterized by being joined together.
[0015]
According to the high-frequency package, the high-frequency line conductor is disposed adjacent to the mounting portion of the high-frequency electronic component, and extends from the outer peripheral portion toward the central portion on the upper surface of the dielectric substrate. Are formed on the same surface so as to surround the ends of the high-frequency electronic components and the high-frequency line conductors of the high-frequency electronic component and the same-surface ground conductors. Are connected by wire bonding, it is possible to make the connection distance between the high-frequency line conductors and the connection distance between the same-plane ground conductors approximately the same, and the connection between the conversion board and the high-frequency electronic component. It is possible to provide a high-frequency package with good signal transmission without delaying the phase of the high-frequency signal and the ground potential in the section.
[0016]
Further, the high-frequency package according to the present invention has a through-hole in which a waveguide is connected to an opening on a lower surface side, which is disposed adjacent to the mounting portion, on a metal base having a mounting portion for high-frequency electronic components on an upper surface. Is formed on the upper surface side of the through hole, and the same as the high-frequency line conductor extending from the outer peripheral portion toward the central portion on the upper surface of the dielectric substrate so as to surround the end portion on the central portion side of the high-frequency line conductor. A connection terminal portion formed of the same-surface ground conductor disposed on the surface is formed, and an upper surface of the through hole is formed on a lower surface of the dielectric substrate so as to face an end of the high-frequency line conductor on the central portion side. A frame-shaped ground conductor having a shape matching the opening of the high-frequency line conductor is formed on the same-plane ground conductor so as to be orthogonal to the end of the high-frequency line conductor on the center side. Is provided with a slot for coupling An internal ground conductor having a transmission opening larger than the slot is formed between the high-frequency line conductor and the frame-shaped ground conductor inside the dielectric substrate, facing the slot. A conversion substrate in which a ground conductor is connected to the internal grounding conductor by a first connection conductor, and the frame-shaped grounding conductor is connected to the internal grounding conductor by a second connection conductor, is connected to the mounting terminal by the mounting terminal. And the frame-shaped ground conductor is joined to the opening on the upper surface side of the through hole.
[0017]
According to the high-frequency package of the present invention, the high-frequency line conductor is disposed adjacent to the mounting portion of the high-frequency electronic component, and extends from the outer peripheral portion toward the central portion on the upper surface of the dielectric substrate. A connection terminal portion formed of the same surface ground conductor disposed on the same surface so as to surround the end on the part side is formed, so that the conversion substrate and the high frequency line conductors of the high frequency electronic component and the same surface ground. If the conductors are connected to each other by wire bonding, the connection distance between the high-frequency line conductors and the connection distance between the same-plane ground conductors can be approximately the same, and the conversion board and the high-frequency electronic component It is possible to provide a high-frequency package with good signal transmission without delaying the phase of the high-frequency signal and the ground potential at the connection portion.
[0018]
In the high-frequency package according to the present invention, in the above-described configuration, a distance between the high-frequency line conductor and the ground conductor on the same plane is 1 / or less of a signal wavelength of a high-frequency signal transmitted by the high-frequency line conductor. It is characterized by the following.
[0019]
According to the high-frequency package of the present invention, in the above configuration, when the interval between the high-frequency line conductor and the same-plane ground conductor is 1 / or less of the signal wavelength of the high-frequency signal transmitted by the high-frequency line conductor, When the conversion substrate and the high-frequency line conductors of the high-frequency electronic component are connected by wire bonding to the high-frequency line conductors and the same-plane ground conductors, a wire connecting the high-frequency line conductors and a wire connecting the same-plane ground conductors are connected. The distance can be reduced to about 1/4 or less of the signal wavelength of the high-frequency signal, and the respective wires are connected to each other to form a high-frequency transmission path, thereby providing a high-frequency package with good transmission of the high-frequency signal. be able to.
[0020]
BEST MODE FOR CARRYING OUT THE INVENTION
Hereinafter, the present invention will be described in detail with reference to the accompanying drawings.
[0021]
1A and 1B are diagrams showing an example of an embodiment of a high-frequency package according to the present invention, wherein FIG. 1A is a plan view, and FIG. 1B is a cross-sectional view taken along line A-AA in FIG. In FIG. 1, 1 is a high-frequency electronic component, 2 is a mounting portion, 3 is a metal substrate, 4 is a waveguide, 5 is a through hole, 6 is a dielectric substrate, 7 is a high-frequency line conductor, and 8 is grounded on the same plane. A conductor, 9 is a connection terminal portion, 10 is a frame-shaped ground conductor, 11 is a slot, 12 is an internal ground conductor, 13 is a first connection conductor, 14 is a second connection conductor, and 15 is a conversion board.
[0022]
In the example of the high-frequency package according to the present invention, a waveguide 4 is disposed on a metal base 3 having a mounting portion 2 for a high-frequency electronic component 1 on an upper surface and an opening on a lower surface side arranged adjacent to the mounting portion 2. Is formed, and on the upper surface side of the through-hole 5, a high-frequency line conductor 7 extending from the outer peripheral portion to the central portion on the upper surface of the dielectric substrate 6 and close to the high-frequency line conductor 7. A connection terminal portion 9 composed of the arranged same-surface ground conductor 8 is formed, and is formed on the lower surface of the dielectric substrate 6 on the upper surface side of the through hole 5 so as to face the end of the high-frequency line conductor 7 on the central portion side. A frame-shaped ground conductor 10 having a shape matching the opening is formed, and a high-frequency line conductor 7 is provided between the center-side end of the high-frequency line conductor 7 inside the dielectric substrate 6 and the frame-shaped ground conductor 10. With a slot 11 for high frequency coupling with the center end A conversion in which a ground conductor 12 is formed, the ground conductor 8 on the same plane is connected to the internal ground conductor 12 and the first connection conductor 13, and the frame-shaped ground conductor 10 is connected to the internal ground conductor 12 and the second connection conductor 14 The substrate 15 is joined such that the connection terminal portion 9 is located on the mounting portion 2 side and the frame-shaped ground conductor 10 is aligned with the opening on the upper surface side of the through hole 5.
[0023]
With such a structure, the conversion board 15 and the high-frequency electronic component 1 are separately manufactured, and the ground of the conversion board 15 and the ground of the high-frequency electronic component 1 are later connected by wire bonding from the outside. It is possible to extend the internal grounding conductor 12 of the conversion board 15 and provide a mounting portion for the high-frequency electronic component 1 formed by being exposed on the surface as in the prior art. It is not necessary to connect the first ground internally with the internal ground conductor 12 in advance, so that the size of the conversion board 15 can be reduced, and the thermal expansion mismatch between the conversion board 15 and the metal base 3 in the manufacturing process of the high-frequency package can be reduced. Since the size can be reduced, warpage and cracking of the package can be prevented.
[0024]
The high-frequency line conductor 7 of the conversion board 15 and the high-frequency line conductors of the high-frequency electronic component 1 are connected to each other, and the same-plane ground conductor 9 of the conversion board 15 and the ground conductors of the high-frequency electronic component 1 are connected to the wire. If the connection is made by bonding, the connection distance between the high-frequency line conductors and the connection distance between the same-plane ground conductors can be made substantially equal, and the phase of the signal potential of the high-frequency signal and the Transmission can be performed without causing a difference in phase, and good transmission of high-frequency signals can be performed.
[0025]
On the other hand, when the conversion board 15 does not have the ground conductor 8 on the same plane, the high-frequency line conductor 7 of the conversion board 15 and the high-frequency line conductor of the high-frequency electronic component 1 are connected to each other at a relatively short distance by a wire. However, the internal grounding conductor 12 that gives the ground potential of the high-frequency signal transmitted through the high-frequency line conductor 7 of the conversion board 15 is transferred from the mounting portion 2, which is the grounding portion of the high-frequency electronic component 1, to the metal base 3 and the frame-shaped conductor. 10, and reach via the second connection conductor 14, which is much longer than the connection distance between the high-frequency line conductors, and the phase of the ground potential in the high-frequency electronic component 1 is the signal potential. In some cases, the connection distance is delayed by an amount corresponding to an increase in the connection distance, and a high-frequency signal cannot be transmitted satisfactorily.
[0026]
In the conventional structure using the high-frequency line-waveguide converter, the high-frequency electronic component 1 is mounted on a portion of the high-frequency line-waveguide converter where the internal ground conductor 12 extends and is exposed on the surface. Since the ground potential of the electronic component 1 is transmitted directly to the high-frequency line-to-waveguide converter by the internal ground conductor 12, there is almost no delay with respect to the signal potential, and the same-plane ground conductor 9 is placed on the upper surface of the conversion board 15. There was no need to provide and connect. However, in this case, it is necessary to extend the internal ground conductor 12 of the dielectric substrate 6 and expose it to the surface, and integrally form a mounting portion for mounting the high-frequency electronic component 1 together with the high-frequency line-waveguide converter. In some cases, the size of the dielectric substrate 6 is increased, and warpage or cracking may occur in bonding with the metal substrate 3. In the high-frequency package of the present invention, the ground connection between the conversion substrate 15 and the high-frequency electronic component 1 can be made by wire bonding by forming the same plane ground conductor 8 on the conversion substrate 15. The mounting portion of the high-frequency electronic component 1 formed by extending and exposing the surface of the high-frequency electronic component 1 is not required, so that the conversion board 15 can be reduced in size, and warpage and cracking in joining with the metal base 3 can be suppressed.
[0027]
In the high-frequency package according to the present invention, if the distance between the high-frequency line conductor 7 and the ground conductor 8 on the same plane is set to 1 / or less of the signal wavelength of the high-frequency signal transmitted by the high-frequency line conductor 7, conversion can be performed. Wire bonding between the high-frequency line conductor 7 of the substrate 15 and the high-frequency line conductors of the high-frequency electronic component 1 and the same-plane ground conductor 8 of the conversion board 15 and the same-plane ground conductor of the high-frequency electronic component 1 are performed. When connected by the above, the distance between the wire connecting the high-frequency line conductors and the wire connecting the same-plane ground conductors can be reduced to about 1/4 or less of the signal wavelength of the high-frequency signal. Are electromagnetically coupled to each other to form a high-frequency transmission path, thereby providing a high-frequency package with good transmission of high-frequency signals.
[0028]
In the high-frequency package of the present invention, when the same-plane ground conductor 8 is arranged on both sides of the high-frequency line conductor 7, the conversion board 15 and a wire connecting the high-frequency line conductors of the high-frequency electronic component 1 are connected to each other. A wire connecting the ground conductors is coupled to each other to transmit a high-frequency signal as a high-frequency transmission line having a signal transmission principle similar to that of the coplanar line, and it is possible to provide a high-frequency package in which high-frequency signal transmission is excellent. .
[0029]
In the high-frequency package of the present invention, since the conversion board 15 is joined to the metal base 3 having the mounting portion 2 of the high-frequency electronic component 1, the high-frequency electronic component 1 is directly joined to the metal base 3. As a result, heat generated by the operation of the high-frequency electronic component 1 can be dissipated through the metal base 3, so that a high-frequency package with good heat dissipation can be provided.
[0030]
Since the same-surface ground conductor 8 is connected to the internal ground conductor 12 and the first connection conductor 13, the high-frequency signal is internally grounded from the outer peripheral portion of the high-frequency line conductor 7 toward the center of the dielectric substrate 6. The lower waveguide 4 is connected through a slot 11 provided to transmit between the conductor 12 and the high-frequency line conductor 7 at the center of the dielectric substrate 6 so as to be coupled at a high frequency. To the through hole 5. The internal grounding conductor 12 provided with the slot 11 is connected to the frame-like grounding conductor 10 and the second connection conductor 14, and the high-frequency signal is transmitted toward the waveguide 4.
[0031]
Here, the length of the slot 11 in the direction orthogonal to the high-frequency line conductor 7 (slot length) is generally set to approximately の of the high-frequency signal wavelength so as to couple with the high-frequency line conductor 7 at a high frequency. In addition, a standing wave in which the magnetic field intensity at the center of the slot 11 is maximized is generated in the slot 11, and the coupling efficiency of the magnetic field with the high-frequency line conductor 7 is improved. When the distance between the internal grounding conductor 12 and the frame-shaped grounding conductor 10 is set to a distance of about 1 / of the high-frequency signal wavelength in the dielectric substrate 6 or an odd multiple thereof, the radiation is radiated from the slot 11 and from the dielectric substrate 6. The direct wave transmitted directly to the waveguide 4 is reflected at the boundary between the dielectric substrate 6 and the waveguide 4, reflected again by the internal ground conductor 12, and reaches the boundary between the dielectric substrate 6 and the waveguide 4. The phases of the reflected waves that have arrived become the same and reinforce each other, so that the coupling efficiency between the slot 11 and the waveguide 4 is improved.
[0032]
2A and 2B are diagrams showing another example of the embodiment of the high-frequency package according to the present invention, wherein FIG. 2A is a plan view, and FIG. 2B is a cross-sectional view taken along line B-BB in FIG. In FIG. 2, 20 is a high-frequency electronic component, 21 is a mounting portion, 22 is a metal base, 23 is a waveguide, 24 is a through hole, 25 is a dielectric substrate, 26 is a high-frequency line conductor, and 27 is the same plane ground. A conductor, 28 is a connection terminal portion, 29 is a frame-shaped ground conductor, 30 is a slot, 31 is a connection conductor, and 32 is a conversion board.
[0033]
In the example of the high-frequency package of the present invention, a waveguide 23 is disposed on an opening on the lower surface side, which is disposed adjacent to the mounting portion 21, on a metal base 22 having a mounting portion 21 for the high-frequency electronic component 20 on the upper surface. Is formed on the upper surface of the through hole 24, and a high-frequency line conductor 26 extending from the outer peripheral portion to the center portion on the upper surface of the dielectric substrate 25, and a central portion of the high-frequency line conductor 26 And a ground terminal 27 formed on the same plane so as to surround the end of the high-frequency line conductor 26 on the lower surface of the dielectric substrate 25. A frame-shaped ground conductor 29 having a shape matching the opening on the upper surface side of the through hole 24 is formed, and is formed on the same-surface ground conductor 27 so as to be orthogonal to the center-side end of the high-frequency line conductor 26. And the high-frequency line conductor 26 A conversion board 32 in which a slot 30 for frequency coupling is provided and the same-plane ground conductor 27 is connected to the frame-shaped ground conductor 29 and the connection conductor 31 by connecting the connection terminal portion 28 to the mounting portion 21 side and The ground conductor 29 is joined to the opening on the upper surface side of the through hole 24.
[0034]
With such a structure, the ground of the conversion board 32 and the ground of the high-frequency electronic component 20 can be connected by wire bonding, and the high-frequency wave formed by extending the dielectric substrate 25 as in the related art can be obtained. It is not necessary to provide a mounting portion for the electronic component 20, and the conversion board 32 can be reduced in size, and the thermal expansion mismatch between the conversion board 32 and the metal base 22 in the manufacturing process of the high-frequency package can be reduced. As a result, warpage and cracking of the package can be prevented.
[0035]
The high-frequency line conductor 26 of the conversion board 32 and the high-frequency line conductor of the high-frequency electronic component 20 are connected to each other, and the same-plane ground conductor 27 of the conversion board 32 and the ground conductor of the high-frequency electronic component 20 are connected to the wire. If they are connected by bonding, the connection distance between the high-frequency line conductors and the connection distance between the ground conductors on the same plane can be made substantially equal, and the phase of the signal potential of the high-frequency signal and the phase of the ground potential at the connection portion between the two conductors It is possible to transmit without causing a difference in the high-frequency signal, and good transmission of the high-frequency signal can be performed.
[0036]
In the high-frequency package of the present invention, if the distance between the high-frequency line conductor 26 and the ground conductor 27 on the same plane is set to be equal to or less than 1 / of the signal wavelength of the high-frequency signal transmitted by the high-frequency line conductor 26, the conversion can be performed. The high-frequency line conductor 7 of the substrate 32 and the high-frequency line conductor of the high-frequency electronic component 20 are wire-bonded to each other, and the same-plane ground conductor 27 of the conversion substrate 32 and the same-plane ground conductor of the high-frequency electronic component 20 are wire-bonded. When connected by the above, the distance between the wire connecting the high-frequency line conductors and the wire connecting the same-plane ground conductors can be reduced to about 1/4 or less of the signal wavelength of the high-frequency signal. Are electromagnetically coupled to each other to form a high-frequency transmission path, thereby providing a high-frequency package with good transmission of high-frequency signals.
[0037]
Further, in the high-frequency package of the present invention, since the coplanar line including the high-frequency line conductor 26 and the ground conductor 27 on the same plane is used as the high-frequency line on the upper surface of the conversion substrate 32, the high-frequency line conductor of the conversion substrate 32 26 and the high-frequency line conductors of the high-frequency electronic component 20 and the same-plane ground conductor 27 and the same-plane ground conductors of the high-frequency electronic component 20 are connected by wire bonding. Since the ground potential of the same-plane ground conductor is directly transmitted to the same-plane ground conductor 27 of the coplanar line of the conversion board 32 by a wire, there is no delay with respect to the transmission of the signal potential of the high-frequency line conductor of the high-frequency electronic component 20. Therefore, it is possible to provide a high-frequency package with good transmission of high-frequency signals.
[0038]
In the high-frequency package of the present invention, a slot 30 that plays an important role in converting the high-frequency line on the upper surface of the conversion substrate 32 into the waveguide 23 is formed on the upper surface of the conversion substrate 32. The length and width of the slot 30 affect the conversion efficiency of converting the high-frequency line into the waveguide 23. If the length of the slot 30 is set to approximately 1 / of the wavelength of the high-frequency signal, the slot 30 is located at the center of the slot 30. A standing wave with the maximum magnetic field strength is generated, and the coupling efficiency due to the magnetic field with the high-frequency line is improved. By forming the width of the slot 30 to be the same as the impedance of the high-frequency line, there is no impedance mismatch between the high-frequency line and the slot 30, and the coupling efficiency with the high-frequency line at the signal frequency is improved.
[0039]
If the width of the slot 30 is formed to be larger than the impedance of the high-frequency line, the impedance is deviated from the impedance matching state at the signal frequency, and the coupling efficiency with the high-frequency line is slightly reduced, but the frequency changes near the signal frequency. Even if the impedance mismatch only changes, the magnitude of the impedance mismatch does not change much, and the coupling is maintained while maintaining a high coupling efficiency with the high-frequency line, so that the frequency band is widened.
[0040]
In addition, by adopting the package having this configuration, it is possible to inspect the dimensions of the slot in appearance, and it is possible to provide a high-frequency package having good high-frequency line-to-waveguide conversion efficiency.
[0041]
Then, the high-frequency signal converted from the high-frequency line in the slot 30 is transmitted to the waveguide 23 as in the example of the embodiment of the present invention. If the distance between the same-plane ground conductor 27, the high-frequency line conductor 26, and the frame-shaped ground conductor 29 is set to be about 4 of the high-frequency signal wavelength in the dielectric substrate 25 or an odd multiple thereof, the radiation from the slot 30 is achieved. The direct wave transmitted directly from the dielectric substrate 25 to the waveguide 23 is reflected at the boundary between the dielectric substrate 25 and the waveguide 23, reflected again by the ground conductor 27 on the same plane, and guided by the dielectric substrate 25. Since the phases of the reflected waves reaching the boundary with the tube 23 become the same and reinforce each other, the high-frequency signal is efficiently converted and transmitted to the waveguide.
[0042]
3A and 3B are views showing still another example of the high-frequency package according to the embodiment of the present invention. FIG. 3A is a plan view, and FIG. 3B is a cross-sectional view taken along line C-CC in FIG. In FIG. 3, 40 is a high-frequency electronic component, 41 is a second high-frequency electronic component, 42 is a mounting portion, 43 is a metal base, 44 is a waveguide, 45 is a through hole, 46 is a dielectric substrate, and 47 is a dielectric substrate. 48 is a high-frequency line conductor, 48 is a ground conductor on the same plane, 49 is a connection terminal portion, 50 is a frame-shaped ground conductor, 51 is a slot, 52 is a transmission opening, 53 is an internal ground conductor, 54 is a first connection conductor, and 55 is a first connection conductor. The second connection conductor 56 is a conversion board.
[0043]
In the example of the high-frequency package according to the present invention, a metal base 43 having a mounting portion 42 for high-frequency electronic components 40 and 41 on an upper surface is guided to an opening on a lower surface side arranged adjacent to the mounting portion 42. A through-hole 45 to which the pipe 44 is connected is formed, and a high-frequency line conductor 47 and a center of the high-frequency line conductor 47 extending from the outer peripheral portion toward the central portion on the upper surface of the dielectric substrate 46 are formed on the upper surface side of the through-hole 45. A connection terminal portion 49 is formed on the same surface so as to surround the end portion on the same side, and a connection terminal portion 49 is formed on the same surface. A frame-shaped ground conductor 50 is formed so as to face the opening on the upper surface side of the through-hole 45 so as to face the upper surface of the through-hole 45, and is orthogonal to the center-side end of the high-frequency line conductor 47 on the same-surface ground conductor 48. High frequency line conductor formed on 7 is provided between the high-frequency line conductor 47 and the frame-shaped ground conductor 50 inside the dielectric substrate 46 so as to face the slot 51 and have a transmission opening 52 larger than the slot 51. Are formed, the same-plane ground conductor 48 is connected to the internal ground conductor 53 by the first connection conductor 54, and the frame-shaped ground conductor 50 is formed by the internal ground conductor 53 and the second connection conductor 55. The connection substrate 56 is connected to the connection terminal portion 49 on the mounting portion 42 side and the frame-shaped ground conductor 50 is aligned with the opening on the upper surface side of the through hole 45.
[0044]
With such a structure, the ground of the conversion board 56 and the ground of the high-frequency electronic components 40 and 41 can be connected by wire bonding, and the internal ground conductor 53 of the conversion board 56 can be extended as in the related art. There is no need to provide a mounting portion for the high-frequency electronic components 40 and 41 formed by being exposed on the surface, and the conversion board 56 can be reduced in size. Since the thermal expansion mismatch with the metal base 43 can be reduced, it is possible to prevent the package from warping or cracking.
[0045]
Further, the connection distance between the high-frequency line conductor 47 of the conversion board 56 and the high-frequency line conductor of the high-frequency electronic component 40 and the connection distance between the same-plane ground conductor 48 of the conversion board 56 and the same-plane ground conductor of the high-frequency electronic component 40 are described. The connection distance can be set to be substantially equal, and transmission can be performed without disturbing the phases of the signal potential of the high-frequency signal and the ground potential at the connection portion of both, so that good transmission of the high-frequency signal can be performed. Become.
[0046]
In this case, the dielectric waveguide portion surrounded by the internal ground conductor 53 and the second connection conductor 55 is internally formed from the coplanar line type high frequency transmission line including the high frequency line conductor 47 and the same plane ground conductor 48. Shielded by the ground conductor 53, the electromagnetic field resonance mode in the dielectric waveguide section is separated from the electromagnetic field transmission mode generated in the high-frequency transmission line, and is separated from the high-frequency line conductor 47 and the same-plane ground conductor 48. There is no possibility that a high frequency signal transmitted through the coplanar line type high frequency transmission line causes unnecessary resonance in the dielectric waveguide portion surrounded by the internal ground conductor 53 and the second connection conductor 55, and the coplanar line Good conversion from the high-frequency transmission line of the type to the waveguide can be performed.
[0047]
In the high-frequency package of the present invention, a small opening (having a cut-off frequency of which the electromagnetic wave at the signal frequency cannot pass) is provided on the upper surface of the high-frequency electronic component 40 at a portion corresponding to the high-frequency line conductor of the high-frequency electronic component 40. When a shield plate having an aperture higher than the signal frequency is mounted, the mounting area of the conversion board 56 and the mounting area of the high-frequency electronic component 41 are shielded at a high frequency, so that the high-frequency high-frequency element has a good isolation characteristic for unnecessary signals. Package can be provided.
[0048]
Further, even when the second high-frequency electronic component 41 having no ground conductor on the same plane is mounted, the same high-frequency electronic component 40 as the high-frequency electronic component 40 is provided between the conversion board 56 and the second high-frequency component 41. By arranging the components having the surface ground conductor and connecting them by wire bonding, it becomes possible to transmit a good high-frequency signal between the conversion board 56 and the second high-frequency component 41.
[0049]
In the high-frequency package according to the present invention, if the distance between the high-frequency line conductor 47 and the ground conductor 48 on the same plane is set to 1 / or less of the signal wavelength of the high-frequency signal transmitted by the high-frequency line conductor 47, the conversion is performed. When the substrate 56 and the high-frequency electronic component 40 are connected by wire bonding, the distance between the wire connecting the high-frequency line conductors and the wire connecting the ground conductors is set to about 1 / or less of the signal wavelength of the high-frequency signal. It is possible to form a high-frequency transmission path by electromagnetic field coupling with each other, and to provide a high-frequency package with good transmission of high-frequency signals.
[0050]
As a dielectric material for forming the dielectric substrates 6, 25, and 46, a ceramic material, glass, or a mixture of glass and a ceramic filler mainly containing aluminum oxide, aluminum nitride, silicon nitride, mullite, or the like is fired. An organic resin material such as a formed glass ceramic material, an epoxy resin, a polyimide resin, a fluorine resin such as an ethylene tetrafluoride resin, or an organic resin-ceramic (including glass) composite material is used.
[0051]
High-frequency line conductors 7, 26, 47, ground conductors 8, 27, 48 on the same plane, frame-shaped ground conductors 10, 29, 50, internal ground conductors 12, 53, first connection conductors 13, 54, and second connection Examples of the conductor material forming the conductors 14 and 55 and the connection conductor 31 include metallization mainly containing tungsten, molybdenum, gold, silver, copper, or the like, or metal foil mainly containing gold, silver, copper, aluminum, or the like. Is used.
[0052]
In particular, when a high-frequency package contains and seals electronic components, the dielectric material forming the dielectric substrates 6, 25, and 46 may have a small dielectric loss tangent and be hermetically sealed. desirable. Particularly desirable dielectric materials include at least one inorganic material selected from the group consisting of aluminum oxide, aluminum nitride, and glass ceramic materials. It is preferable to use such a hard material because the dielectric loss tangent is small and the mounted high-frequency component can be hermetically sealed, so that the reliability of the mounted high-frequency component is improved. In this case, it is desirable to use a metallized conductor that can be co-fired with the dielectric material from the viewpoint of hermetic sealing and productivity as the conductor material.
[0053]
As the metal material for forming the metal bases 3, 22, 43, alloys, compounds, composite materials, etc. containing iron, cobalt, nickel, tungsten, molybdenum, copper, etc. as main components are used.
[0054]
The high frequency package of the present invention is manufactured as follows. For example, in the case of using an aluminum oxide sintered body as a dielectric substrate material, first, an appropriate organic solvent / solvent is added to a raw material powder such as aluminum oxide / silicon oxide / magnesium oxide / calcium oxide to form a slurry. This is formed into a sheet by a conventionally known doctor blade method or calender roll method to produce a ceramic green sheet. Further, a metallized paste is prepared by adding a suitable organic solvent and a solvent to raw material powders such as a high melting point metal such as tungsten and molybdenum, aluminum oxide, silicon oxide, magnesium oxide and calcium oxide. Next, through holes for forming the first connection conductors 13 and 54, the second connection conductors 14 and 55, and the connection conductors 31 as via-hole conductors are formed in the ceramic green sheet by, for example, a punching method, and, for example, printing is performed. The metallized paste is embedded in the through-holes by the method, followed by the high-frequency line conductors 7, 26, 47, the ground conductors 8, 27, 48 on the same plane, the frame-shaped ground conductors 10, 29, 50, and the internal ground conductors 12, 53. Print metallized paste on the shape of. When the dielectric substrates 6, 25, and 46 have a laminated structure of a plurality of dielectric layers, ceramic green sheets in which these conductors are embedded and printed are laminated, pressurized and pressed, and subjected to high temperature (about 1600 ° C.). Baking. Further, the surface of the conductor exposed on the surface of the high-frequency line conductors 7, 26, 47, the same plane ground conductors 8, 27, 48, the frame-shaped ground conductors 10, 29, 50, etc. The conversion substrates 15, 32, 56 are formed by applying gold plating.
[0055]
The conversion substrates 15, 32, 56 are provided with through holes 5, 24, 45 to which the waveguides 4, 23, 44 of the metal bases 3, 22, 43 are connected. Joined with brazing material. When the brazing material is a silver-copper brazing material, the conversion substrates 15, 32, 55 and the metal bases 3, 22, 43 are joined in a nickel-plated state. When the brazing material is gold-tin brazing, the conversion substrates 15, 32, 56 and the metal bases 3, 22, 43 are joined in a state of nickel and gold plating finish, so no special plating is applied after the metal base joining.
[0056]
In the example of the high-frequency package according to the present invention, a rectangular waveguide is shown as the waveguides 4, 23, 44. However, the shape of the waveguides 4, 23, 44 is not particularly limited. A waveguide may be used.
[0057]
It should be noted that the present invention is not limited to the above embodiments, and various changes may be made without departing from the spirit of the present invention.
[0058]
For example, FIG. 1 shows an example in which the end of the high-frequency line conductor 7 on the center side of the dielectric substrate 6 is opened in order to electromagnetically couple the high-frequency line conductor 7 and the slot 11. The end on the center side of the dielectric substrate 6 may be short-circuited to the internal ground conductor 12 with a via-hole conductor or the like in the vicinity of the slot 11 so as to be electromagnetically coupled.
[0059]
FIG. 2 shows an example in which the end of the high-frequency line conductor 26 on the center side of the dielectric substrate 25 is short-circuited to the slot 30 in order to electromagnetically couple the high-frequency line conductor 26 and the slot 30. The end of the line conductor 26 on the center side of the dielectric substrate 25 may be opened as shown in FIG. 4 and electromagnetically coupled.
[0060]
【The invention's effect】
According to the high-frequency package of the present invention, the high-frequency line conductor is disposed adjacent to the mounting portion of the high-frequency electronic component, and is located on the upper surface of the dielectric substrate from the outer peripheral portion toward the central portion. A connection terminal portion formed of the same-surface ground conductor arranged in the same direction is formed. If the conversion substrate and the high-frequency line conductors of the high-frequency electronic component and the same-plane ground conductor are connected by wire bonding, respectively, The connection distance between the line conductors and the connection distance between the ground conductors on the same plane can be made substantially the same, and the phase of the high-frequency signal and the ground potential at the connection between the conversion board and the high-frequency electronic component is delayed. Thus, a high-frequency package with good signal transmission can be provided.
[0061]
Further, according to the high-frequency package of the present invention, the high-frequency electronic component mounting portion and the conversion substrate can be divided, so that the conversion substrate can be reduced in size, and the difference in the coefficient of thermal expansion between the substrate and the metal substrate can be reduced. Can be reduced, and the package can be prevented from warping and cracking.
[0062]
Further, according to the high-frequency package of the present invention, the dielectric waveguide portion surrounded by the internal ground conductor and the second connection conductor forms the high-frequency electromagnetic field generated in the high-frequency line conductor portion on the upper surface by the internal ground conductor. More shielded. For example, a magnetic field orbiting the high-frequency line conductor is generated in the high-frequency line conductor, and a part of this magnetic field matches the TM-mode magnetic field, which is one of the resonance modes in the dielectric waveguide. By shielding these two magnetic fields with the internal ground conductor, the possibility of causing unnecessary resonance in the dielectric waveguide portion is reduced, and good conversion to the waveguide can be performed.
[0063]
According to the high-frequency package of the present invention, when the distance between the high-frequency line conductor and the same-plane ground conductor is equal to or less than 1 / of the signal wavelength of the high-frequency signal transmitted by the high-frequency line conductor, the conversion board When the high-frequency line conductors of the high-frequency electronic component and the same-plane ground conductors are connected by wire bonding, the distance between the wire connecting the high-frequency line conductors and the wire connecting the same-plane ground conductors is reduced. It is possible to reduce the signal wavelength of the high-frequency signal to about 1/4 or less, and the respective wires are electromagnetically coupled to each other to form a high-frequency transmission path, thereby providing a high-frequency package with good transmission of the high-frequency signal. be able to.
[Brief description of the drawings]
FIG. 1 is a view showing an example of an embodiment of a high-frequency package according to the present invention, wherein (a) is a plan view and (b) is a cross-sectional view taken along line A-AA in (a).
2A and 2B are diagrams showing another example of the high-frequency package according to the embodiment of the present invention, wherein FIG. 2A is a plan view and FIG. 2B is a cross-sectional view taken along line B-BB in FIG.
3A and 3B are diagrams showing another example of the high-frequency package according to the embodiment of the present invention, wherein FIG. 3A is a plan view and FIG. 3B is a cross-sectional view taken along line C-CC in FIG.
FIG. 4 is a plan view showing another example of the form of the high-frequency line conductor of the conversion board of the high-frequency wiring package of the present invention.
FIG. 5 is a cross-sectional view showing an example of a conventional high-frequency line-waveguide converter.
[Explanation of symbols]
1.20.40.41..High frequency electronic components
··············· 21
3.22.43 Metal substrate
· · · · · · 23 · 44 · · · waveguide
5.24.45 ...- through-hole
6, 25, 46 ... dielectric substrate
7.26.47 ... Line conductor for high frequency
· · · · · · · · Ground conductors on the same plane
9, 28, 49 ... Connection terminal part
10, 29, 50 ... Frame-shaped ground conductor
11, 30, 51, ... Slot
12.53 ・ ・ ・ ・ ・ ・ Internal ground conductor
13.54 First connection conductor
14.55 Second ground conductor
15, 32, 56 ... conversion board
31 ... Connection conductor
52 ・ ・ ・ ・ ・ ・ ・ ・ Transmissive aperture

Claims (4)

上面に高周波用電子部品の搭載部を有する金属基体に、前記搭載部に隣接して配置された、下面側の開口に導波管が接続される貫通孔が形成されるとともに、該貫通孔の上面側に、誘電体基板の上面に外周部から中央部に向かう高周波用線路導体と該高周波用線路導体に近接して配置された同一面接地導体とから成る接続端子部が形成され、前記誘電体基板の下面に前記高周波用線路導体の前記中央部側の端部と対向するように前記貫通孔の上面側の開口に合った形状の枠状接地導体が形成され、前記誘電体基板の内部の前記高周波用線路導体の前記中央部側の端部と前記枠状接地導体との間に、前記高周波用線路導体の前記中央部側の端部と高周波的に結合するスロットが設けられた内部接地導体が形成され、前記同一面接地導体が前記内部接地導体と第1の接続導体で接続され、前記枠状接地導体が前期内部接地導体と第2の接続導体で接続された変換基板を、前記接続端子部を前記搭載部側に位置させるとともに前記枠状接地導体を前記貫通孔の上面側の開口に合わせて接合して成ることを特徴とする高周波用パッケージ。In a metal base having a mounting portion for high-frequency electronic components on the upper surface, a through hole is formed adjacent to the mounting portion, and a waveguide is connected to an opening on the lower surface side, and a through hole is formed. On the upper surface side, a connection terminal portion formed of a high-frequency line conductor extending from the outer peripheral portion toward the center portion on the upper surface of the dielectric substrate and a same-plane ground conductor disposed close to the high-frequency line conductor is formed. A frame-shaped grounding conductor is formed on the lower surface of the body substrate so as to face the opening on the upper surface side of the through-hole so as to face the end of the high-frequency line conductor on the central portion side. A slot provided between the end on the center portion side of the high-frequency line conductor and the frame-shaped ground conductor, the slot being coupled to the end portion on the center portion side of the high-frequency line conductor in a high frequency range A ground conductor is formed, and the same-plane ground conductor is A conversion board connected to a grounding conductor and a first connection conductor, wherein the frame-shaped grounding conductor is connected to the internal grounding conductor and the second connection conductor by positioning the connection terminal portion on the mounting portion side; A high-frequency package formed by joining a frame-shaped grounding conductor to an opening on the upper surface side of the through hole. 上面に高周波用電子部品の搭載部を有する金属基体に、前記搭載部に隣接して配置された、下面側の開口に導波管が接続される貫通孔が形成されるとともに、該貫通孔の上面側に、誘電体基板の上面に外周部から中央部に向かう高周波用線路導体と該高周波用線路導体の前記中央部側の端部を取り囲むように同一面に配された同一面接地導体とから成る接続端子部が形成され、前記誘電体基板の下面に前記高周波用線路導体の前記中央部側の端部と対向するように前記貫通孔の上面側の開口に合った形状の枠状接地導体が形成され、前記同一面接地導体に、前記高周波用線路導体の前記中央部側の端部と直交するように形成されて前記高周波用線路導体と高周波的に結合するスロットが設けられ、前記同一面接地導体が前記枠状接地導体と接続導体で接続された変換基板を、前記接続端子部を前記搭載部側に位置させるとともに前記枠状接地導体を前記貫通孔の上面側の開口に合わせて接合して成ることを特徴とする高周波用パッケージ。In a metal base having a mounting portion for high-frequency electronic components on the upper surface, a through hole is formed adjacent to the mounting portion, and a waveguide is connected to an opening on the lower surface side, and a through hole is formed. On the upper surface side, a high-frequency line conductor extending from the outer peripheral portion to the central portion on the upper surface of the dielectric substrate, and a coplanar grounding conductor arranged on the same surface so as to surround the end portion on the central portion side of the high-frequency line conductor. And a frame-shaped ground formed on the lower surface of the dielectric substrate so as to face the opening on the upper surface side of the through-hole so as to face the end of the high-frequency line conductor on the central portion side. A conductor is formed, and the same-surface ground conductor is provided with a slot formed to be orthogonal to the end of the high-frequency line conductor on the side of the central portion and coupled to the high-frequency line conductor at a high frequency, The same-surface ground conductor is in contact with the frame-shaped ground conductor. A high-frequency converter comprising: a conversion board connected by a conductor, wherein the connection terminal portion is positioned on the mounting portion side and the frame-shaped ground conductor is joined to an opening on an upper surface side of the through hole. package. 上面に高周波用電子部品の搭載部を有する金属基体に、前記搭載部に隣接して配置された、下面側の開口に導波管が接続される貫通孔が形成されるとともに、該貫通孔の上面側に、誘電体基板の上面に外周部から中央部に向かう高周波用線路導体と該高周波用線路導体の前記中央部側の端部を取り囲むように同一面に配された同一面接地導体とから成る接続端子部が形成され、前記誘電体基板の下面に前記高周波用線路導体の前記中央部側の端部と対向するように前記貫通孔の上面側の開口に合った形状の枠状接地導体が形成され、前記同一面接地導体に、前記高周波用線路導体の前記中央部側の端部と直交するように形成されて前記高周波用線路導体と高周波的に結合するスロットが設けられ、前記誘電体基板の内部の前記高周波用線路導体と前記枠状接地導体との間に、前記スロットに対向して該スロットよりも大きな透過開口が設けられた内部接地導体が形成され、前記同一面接地導体が前記内部接地導体と第1の接続導体で接続され、前記枠状接地導体が前記内部接地導体と第2の接続導体で接続された変換基板を、前記接続端子部を前記搭載部側に位置させるとともに前記枠状接地導体を前記貫通孔の上面側の開口に合わせて接合して成ることを特徴とする高周波用パッケージ。In a metal base having a mounting portion for high-frequency electronic components on the upper surface, a through hole is formed adjacent to the mounting portion, and a waveguide is connected to an opening on the lower surface side, and a through hole is formed. On the upper surface side, a high-frequency line conductor extending from the outer peripheral portion to the central portion on the upper surface of the dielectric substrate, and a coplanar grounding conductor arranged on the same surface so as to surround the end portion on the central portion side of the high-frequency line conductor. And a frame-shaped ground formed on the lower surface of the dielectric substrate so as to face the opening on the upper surface side of the through-hole so as to face the end of the high-frequency line conductor on the central portion side. A conductor is formed, and the same-surface ground conductor is provided with a slot formed to be orthogonal to the end of the high-frequency line conductor on the side of the central portion and coupled to the high-frequency line conductor at a high frequency, The high-frequency line conductor inside the dielectric substrate And an inner ground conductor having a transmission opening larger than the slot is formed between the inner ground conductor and the frame-shaped ground conductor, and the same-plane ground conductor is connected to the inner ground conductor by a first connection. A conversion board connected by a conductor, wherein the frame-shaped ground conductor is connected to the internal ground conductor by a second connection conductor, the connection terminal portion is positioned on the mounting portion side, and the frame-shaped ground conductor is penetrated through the conversion board. A high-frequency package characterized by being joined to an opening on the upper surface side of a hole. 前記高周波用線路導体と前記同一面接地導体との間隔が前記高周波用線路導体により伝送される高周波信号の信号波長の1/4以下であることを特徴とする請求項1乃至請求項3記載の高周波用パッケージ。The distance between the high-frequency line conductor and the ground conductor on the same plane is equal to or less than 1/4 of a signal wavelength of a high-frequency signal transmitted by the high-frequency line conductor. High frequency package.
JP2003087350A 2002-10-29 2003-03-27 High frequency package Expired - Fee Related JP4002527B2 (en)

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JP2003087350A JP4002527B2 (en) 2003-03-27 2003-03-27 High frequency package
US10/696,745 US7276987B2 (en) 2002-10-29 2003-10-29 High frequency line-to-waveguide converter and high frequency package
DE10350346A DE10350346B4 (en) 2002-10-29 2003-10-29 High Frequency Line Waveguide Converter and High Frequency Package
US11/841,442 US7522014B2 (en) 2002-10-29 2007-08-20 High frequency line-to-waveguide converter and high frequency package

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Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006229568A (en) * 2005-02-17 2006-08-31 Kyocera Corp High-frequency line/waveguide converter, and electronic apparatus
JP2007235234A (en) * 2006-02-27 2007-09-13 Kyocera Corp Aperture antenna
JP2011517247A (en) * 2008-04-15 2011-05-26 フーバー ウント ズーナー アーゲー Surface mount antenna having waveguide connector function, communication system having the antenna device, adapter, and arrangement
JP5720667B2 (en) * 2010-02-17 2015-05-20 日本電気株式会社 Waveguide / planar line converter
CN114520212A (en) * 2022-04-20 2022-05-20 之江实验室 Wideband chip packaging structure supporting high-speed signal transmission

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006229568A (en) * 2005-02-17 2006-08-31 Kyocera Corp High-frequency line/waveguide converter, and electronic apparatus
JP4663351B2 (en) * 2005-02-17 2011-04-06 京セラ株式会社 Electronic equipment
JP2007235234A (en) * 2006-02-27 2007-09-13 Kyocera Corp Aperture antenna
JP2011517247A (en) * 2008-04-15 2011-05-26 フーバー ウント ズーナー アーゲー Surface mount antenna having waveguide connector function, communication system having the antenna device, adapter, and arrangement
JP5720667B2 (en) * 2010-02-17 2015-05-20 日本電気株式会社 Waveguide / planar line converter
US9048522B2 (en) 2010-02-17 2015-06-02 Nec Corporation Waveguide to planar line transducer having a coupling hole with oppositely directed protuberances
CN114520212A (en) * 2022-04-20 2022-05-20 之江实验室 Wideband chip packaging structure supporting high-speed signal transmission
CN114520212B (en) * 2022-04-20 2022-08-23 之江实验室 Wideband chip packaging structure supporting high-speed signal transmission

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