JP3493301B2 - High frequency input / output terminals and high frequency semiconductor element storage package - Google Patents

Description

Detailed Description of the Invention

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention uses a high frequency input / output terminal used in a high frequency input / output section of a package for storing a high frequency semiconductor element in a microwave band, a millimeter wave band or the like, and the high frequency input / output terminal. The present invention relates to a package for housing a high frequency semiconductor device.

[0002]

2. Description of the Related Art A high-frequency signal input / output terminal portion of a high-frequency semiconductor element housing package for hermetically sealing a high-frequency semiconductor element using a high-frequency signal in the microwave band or millimeter wave band As a line conductor of a transmission line, a structure in which a microstrip line formed on a dielectric substrate and a strip line of a hermetic seal are joined is generally used.If necessary, multiple line conductors are arranged in parallel. It is set up.

Further, such an input / output terminal portion is formed as a signal input / output portion of a package for housing a high frequency semiconductor element, and is also used as a high frequency input / output terminal for being incorporated in the package. Has been done.

As a conventional high-frequency input / output terminal as described above, there is one having a structure as shown in FIG. 4, for example.
FIG. 4A is a perspective view showing an example of a conventional high-frequency input / output terminal, FIG. 4B is a plan view showing a part thereof, and FIG. 4C is a line AA ′ of FIG. 4B. FIG. In the high frequency input / output terminal 1 shown in FIG. 4, a plurality of line conductors 4 are formed on the upper surface of a dielectric substrate 2 made of alumina ceramic or the like having a ground conductor layer 3 formed on the lower surface thereof by a metallized metal layer made of tungsten or molybdenum. In a direction substantially orthogonal to each line conductor 4 so that a dielectric wall member 5 which is formed substantially parallel to each other in the transmission direction of a high frequency signal and which constitutes a hermetic seal portion sandwiches a part of each line conductor 4 therebetween. It is joined. An upper surface ground conductor layer (not shown) is formed on the upper surface of the dielectric wall member 5 if necessary.

Then, the metal base forming the package for housing the high-frequency semiconductor element and the metal frame forming the container wall are cut out to form a mounting portion for the high-frequency input / output terminal,
By fitting and using the high-frequency input / output terminal 1 of this type in this mounting portion, a so-called metal wall type high-frequency semiconductor element housing package is obtained.

Further, the dielectric substrate forming the package for housing the high frequency semiconductor element and the dielectric frame forming the container wall are cut out to form a mounting portion for the high frequency input / output terminal, and the mounting portion for the high frequency is formed. A ground conductor layer is formed on the lower surface of the package having the structure in which the input / output terminal 1 is fitted and used, or a package in which an input / output terminal portion having the same structure as the high frequency input / output terminal 1 is formed, and the upper surface is formed. A dielectric substrate having a mounting portion for mounting a high-frequency semiconductor element, and a plurality of line conductors formed on the upper surface of the dielectric substrate from near the mounting portion to near the outer periphery of the dielectric substrate,
A part of the line conductor is sandwiched between the dielectric substrate and the dielectric wall member. There is also one having the same configuration as the input / output terminal 1. In these cases, a so-called ceramic wall type high frequency semiconductor element housing package is formed.

Further, there is a package in which a high frequency input / output terminal 1 is similarly fitted by using a dielectric substrate and a metal frame.

In these conventional high-frequency input / output terminals 1 or input / output terminal portions, impedance matching is generally achieved by adjusting the width of the line conductor 4 and the thickness of the dielectric substrate 2 in order to propagate a high-frequency signal. Is designed according to
This suppresses reflection of high-frequency signals at the hermetically sealed portion, that is, the joint between the dielectric substrate 2 and the dielectric wall member 5 to obtain good high-frequency characteristics.

In the high-frequency input / output terminal 1 and the high-frequency semiconductor element housing package having such a structure, not only the reflection characteristics of high-frequency signals but also crosstalk and isolation should be taken into consideration in terms of electrical characteristics. As a characteristic referred to as, the deterioration of high frequency characteristics due to electrical interference of high frequency signals between the line conductors 4 is regarded as a problem. Therefore, the following measures are generally taken to prevent such signal interference.

1) Interval between the line conductors 4 (arrangement pitch)
As wide as possible. 2) As shown in the plan view of FIG. 5A similar to FIG. 4B, the same-plane ground conductor layer 6 is provided between the line conductors 4. 3) In order to improve the groundability of the same-plane grounding conductor layer 6 in the structure of 2), FIG. 5A and FIG.
(A) AA ′ sectional view), as shown in FIG.
Through conductors such as via holes filled with conductor metal inside
Or a side surface metallized conductor layer (not shown) is provided on the side surface of the dielectric substrate 2 to electrically connect the ground conductor layer 6 on the same surface to the ground conductor layer 3.

Further, a lead terminal for signal extraction or power supply extraction may be attached to each line conductor 4 or the same-plane grounding conductor layer 6 for connection with an external electric circuit or a high frequency semiconductor element. This lead terminal (not shown) is connected to each line conductor 4 or the same-plane ground conductor layer 6 with, for example, an Ag-Cu brazing material.

[0012]

However, in the high-frequency input / output terminal and the input / output terminal portion of the high-frequency semiconductor element accommodating package having the above-described structure, the electrode pad arrangement of the high-frequency semiconductor element has a high density. As a result, or in order to cope with various electrode pad arrangements, the arrangement pitch between the line conductors 4 may become narrow, and in this case, there were the following problems.

A) Coplanar ground conductor layer 6 between each line conductor 4
There is a possibility that the line conductor 4 and the ground plane conductor layer 6 on the same surface may be short-circuited if the line conductor 4 is forcibly provided. b) Even if the ground conductor layer 6 on the same plane can be provided, there is no room to provide the through conductors 7 and the like, and if the through conductors 7 and the like are forcibly provided, the through conductors 7 and the like and the line conductor 4 may be short-circuited. There is. c) Even if the ground conductor layer 6 on the same surface, the through conductor 7, etc. can be provided, since the gap between these and the line conductor 4 cannot be sufficiently secured, the impedance becomes low and the impedance mismatching occurs. As a result, the high frequency signal is reflected and the high frequency characteristics deteriorate. d) In the structure of c), it is necessary to narrow the width of the line conductor 4 in order to match the impedance, but if the width is made narrower, in the case of the specification in which the lead terminal is attached to the line conductor 4, the joint strength of the lead terminal is Will be reduced.

The present invention has been devised in view of the above circumstances. An object of the present invention is to provide a method for connecting between line conductors even when the space between line conductors is narrow and there is no room to provide a ground conductor layer on the same surface. Reduction of high frequency characteristics due to electrical interference can be reduced,
Moreover, it is an object of the present invention to provide a high-frequency input / output terminal and a high-frequency semiconductor element accommodating package which have good high-frequency characteristics and are free from manufacturing problems such as mounting of lead terminals.

[0015]

In the high frequency input / output terminal of the present invention, a plurality of line conductors are formed in parallel with each other on an upper surface of a dielectric substrate having a ground conductor layer formed on a lower surface,
A band-shaped dielectric wall member having a dielectric constant lower than that of the dielectric substrate sandwiching a part of each line conductor in a direction orthogonal to these line conductors is joined, and at least the dielectric wall member is formed. On one side, the dielectric substrate between the line conductors is provided with a groove of an air layer having a width of 0.2 mm or more and a depth of ½ or more of the thickness of the dielectric substrate. It is characterized in that the effective dielectric constant is lower than that in the case without the groove.

Further, the high frequency input / output terminal of the present invention is characterized in that, in the above structure, the groove penetrates the dielectric substrate.

In the first package for housing a high-frequency semiconductor element according to the present invention, a frame is joined to a substrate having a mounting portion for mounting a semiconductor element for a high frequency on an upper surface thereof so as to surround the mounting portion. An input / output terminal mounting portion is formed by cutting out the frame body and having a conductive bottom surface, and the high frequency input / output terminal of each of the above configurations is fitted to the input / output terminal mounting portion. To do.

In the second package for housing a high frequency semiconductor element of the present invention, a mounting portion for mounting the high frequency semiconductor element on the upper surface of the dielectric substrate having the ground conductor layer formed on the lower surface, and the mounting portion. Forming a plurality of line conductors arranged in parallel to each other from the vicinity to the vicinity of the outer periphery of the dielectric substrate, enclosing the mounting portion on the dielectric substrate and sandwiching a part of each of the line conductors, The upper part of the line conductor has a dielectric constant lower than that of the rest of the dielectric frame, and the width is 0.2 mm or more on the dielectric substrate between the line conductors on at least one side of the dielectric frame. The effective permittivity around the line conductor is made lower than that when the groove is not provided by providing the groove of the air layer having a depth of ½ or more of the thickness of the dielectric substrate. Is.

Further, the second package for housing a high-frequency semiconductor element of the present invention is characterized in that, in the above-mentioned structure, the groove penetrates the dielectric substrate.

[0020]

DETAILED DESCRIPTION OF THE INVENTION The present invention will be described below with reference to the drawings. FIG. 1 is a view similar to FIG. 4 showing an example of an embodiment of a high frequency input / output terminal of the present invention, in which FIG. 1 (a) is a perspective view and FIG. 1 (b) is a plan view showing a part thereof. FIG. 13C is a sectional view taken along the line AA ′ of FIG. In FIG. 1, 11 is a high frequency input / output terminal, 12 is a dielectric substrate, and 15 is a dielectric substrate.
A band-shaped dielectric wall member having a lower permittivity than the dielectric substrate 12 bonded to the upper surface of 12, and these are hermetically sealed parts (hermetically sealed parts) in the signal input / output part of the high frequency semiconductor device housing package. Also used as. A ground conductor layer 13 is formed on the lower surface of the dielectric substrate 12, and a plurality of line conductors 14 are formed on the upper surface in parallel with each other in the transmission direction of the high-frequency signal. The dielectric wall member 15 is orthogonal to the line conductor 14. They are joined so as to sandwich a part of each line conductor 14 in the direction.

In this example, as shown in FIG. 1B, the line width of the line conductor 14 is exposed on the upper surface of the dielectric substrate 12 with respect to the dielectric substrate 12 and the dielectric wall member. The area sandwiched between 15 and 15 is narrowed, so that the characteristic impedance of the line conductor 14 is matched with that of the hermetically sealed portion.

On at least one side of the dielectric wall member 15, that is, on at least one side of the dielectric wall member 15, the dielectric substrate 12 between the line conductors 14 has a width of 0.2 mm or more and a depth of dielectric. Grooves 16 having a thickness equal to or larger than ½ of the thickness of the body substrate 12 are provided, and the grooves 16 allow the air layer grooves to be interposed between the line conductors 14. In this example, the grooves 16 are provided on both sides of the dielectric wall member 15, but these grooves 16 are located on at least one side, preferably at least on the outside of the package, depending on the specifications of the high-frequency input / output terminal 11. To be installed. The width of the groove 16 is set to 0.2 mm or more and less than the distance between the line conductors 14.

In the high-frequency input / output terminal 11 and the input / output section of the high-frequency semiconductor element accommodating package having the similar structure, electrical interference in high-frequency characteristics between a plurality of line conductors 14 is generally caused by these lines. This is largely due to the dielectric constant interposed between the conductors 14, here the dielectric substrate 12, and the higher the dielectric constant, the greater the capacitance value between the line conductors 14 and the greater the electrical interference.

According to the high frequency input / output terminal 11 of the present invention,
Since the groove 16 is provided in the dielectric substrate 12 between the line conductors 14, an air groove is interposed in this portion, and the dielectric substrate 12
Dielectric constant of, for example, alumina has a relative dielectric constant of 8.8 to 8.9
On the other hand, the relative permittivity of the air interposed as the groove 16 is
Since it is as small as 1.0, the capacitance value between the line conductors 14 becomes low,
The electrical interference that adversely affects the high frequency characteristics is reduced.

Further, since the groove 16, that is, the air layer having a small relative permittivity, is provided in the vicinity of the line conductor 14, the effective permittivity around the line conductor 14 becomes low. Therefore, when impedance matching is performed by changing the width of the line conductor 14, the width of the line conductor 14 can be increased as compared with the conventional high-frequency input / output terminal, and the lead terminal can be attached to the line conductor 14. In this case, the bonding area of the lead terminal can be increased and a sufficient bonding strength can be secured.

In the high-frequency input / output terminal 11 having such a structure, when the width of the groove 16 is less than 0.2 mm, the function and effect of the groove 16 cannot be obtained, and the electric coupling between the line conductors 14 becomes large, so that the electrical conductivity is increased. Interference tends to be large, and when manufacturing the dielectric substrate 12, it is difficult to directly form the groove 16 in the dielectric substrate 12, or a lower sheet-shaped dielectric layer is formed. A dielectric layer 12b serving as an upper layer in which a notch which becomes the groove 16 is formed on 12a
When the sheet stacking method for stacking the
It becomes difficult to obtain the desired groove 16 after processing the notch portion in b and firing, and manufacturing becomes difficult. Therefore, the width of the groove 16 in the high frequency input / output terminal 11 of the present invention must be 0.2 mm or more.

If the depth of the groove 16 is shallower than half the thickness of the dielectric substrate 12, the effect of the groove 16 cannot be sufficiently obtained and the electrical coupling between the line conductors 14 is not achieved. Tends to increase and electrical interference tends to increase. Therefore, the depth of the groove 16 in the high frequency input / output terminal 11 of the present invention needs to be equal to or more than half the thickness of the dielectric substrate 12. As will be described later, the groove
16 is the same depth as the thickness of the dielectric substrate 12, that is, the dielectric substrate
It may pass through 12 and may be a notch formed between the line conductors 14 of the dielectric substrate 12.

Next, FIGS. 2A to 2C respectively show another example of the embodiment of the high frequency input / output terminal of the present invention.
The same perspective view, plan view, and AA 'as (a)-(c).
Shown in cross-section. In FIG. 2, 21 is a high frequency input / output terminal, 22 is a dielectric substrate, and 25 is a strip-shaped dielectric wall member having a lower dielectric constant than the dielectric substrate 22 bonded to the upper surface of the dielectric substrate 22. A ground conductor layer 23 is formed on the lower surface of the dielectric substrate 22, and a plurality of line conductors 24 are formed on the upper surface thereof in parallel with each other in the transmission direction of the high frequency signal.
Are joined so as to sandwich a part of each line conductor 24 in a direction orthogonal to.

On at least one side of the dielectric wall member 25, that is, on at least one side of the dielectric wall member 25 as a boundary, the dielectric substrate 22 between the line conductors 24 has a width of 0.2 mm or more and a depth of dielectric. A groove 26 is provided in the air layer that is ½ or more of the thickness of the body substrate 22 so that the effective dielectric constant around the line conductor 24 is lower than that when the groove 26 is not provided.
In this example, the groove 26 penetrates the dielectric substrate 22 to form a cutout portion. Thus, the groove 26 is formed in the dielectric substrate 22.
In the case of the notch portion penetrating through, the dielectric substrate 22 between the line conductors 24 is completely separated by the air layer, and the action effect of the groove 26 is more suitably exhibited. .

Although the grooves 26 are provided on both sides of the dielectric wall member 25 also in this example, these grooves 26 are also provided on at least one side, preferably at least on the outside of the package according to the specifications of the high frequency input / output terminal 21. It may be provided on the side where it is located.

Further, in the high frequency input / output terminal of the present invention, like the conventional high frequency input / output terminal, the same plane ground conductor layer and the like are provided between the line conductors, and the same plane ground conductor layer and the ground conductor layer etc. A through conductor or a side-surface metallized conductor layer for connecting with may be provided. An example thereof is shown in FIG.

3 (a) and 3 (b) show another example of the embodiment of the high frequency input / output terminal of the present invention, which is a plan view similar to FIG. 2 (b) and B- in FIG. 3 (a), respectively. It is a B'sectional view. In FIG. 3, 31 is a high frequency input / output terminal, 32 is a dielectric substrate, 33 is a ground conductor layer, 34 is a line conductor, 35 is a dielectric wall member, and 36 is provided on the dielectric substrate 32 between the line conductors 34. It is a groove. Note that the groove 36 shows an example that penetrates the dielectric substrate 32.

Reference numeral 37 denotes a coplanar ground conductor layer provided on the upper surface of the dielectric substrate 32 between the line conductors 34, and 38 denotes a coplanar ground conductor formed by penetrating the dielectric substrate 32. Layer 37
It is a through conductor such as a via hole that electrically connects the ground conductor layer 33 with the ground conductor layer 33. Further, 39 is an upper surface ground conductor layer formed on the upper surface of the dielectric wall member 35, and is electrically connected to the same surface ground conductor layer 37 and the ground conductor layer 33 by a through conductor 38. In the high frequency input / output terminal 31 of the present invention, at least one side of the dielectric wall member 35, that is, the dielectric wall member 35.
Since the groove 36 is formed in the dielectric substrate 32 between the line conductors 34 on at least one side of the line 35, the same-plane ground conductor layer 37 is not formed in the portion where the groove 36 is formed, Instead, there will be an air layer.

In this way, when the side-face ground conductor layer 37, the top-face ground conductor layer 39, the through conductor 38, and the side-face ground conductor layers are provided on the side surfaces of the dielectric substrate 32 and the dielectric wall member 35, Since the line conductor 34 in the hermetically sealed portion is surrounded by the ground conductor layer, it can be used as a shield for high frequency signals and stable high frequency characteristics can be obtained.

Incidentally, such a side-face ground conductor layer and a top-face ground conductor layer may be formed by another conductive member instead of these, for example, when the high frequency input / output terminal is incorporated in a package.

In the high-frequency input / output terminal of the present invention, the dielectric substrate and the dielectric wall member are made of, for example, a ceramic material such as alumina or mullite, glass ceramics, or a resin such as Teflon (PTFE), glass epoxy, or polyimide. A system material or the like is used. The thickness, width and length of these dielectrics are appropriately set according to the frequency and characteristic impedance of the transmitted high frequency signal.

The dielectric constant of the dielectric wall member is lower than that of the dielectric substrate, and the dielectric constant of the dielectric wall member should be as close as possible to that of vacuum. As a result, the change in the propagation mode at the junction between the dielectric substrate and the dielectric wall member and the other portion is reduced, and the transmission loss is reduced.

The line conductor is a metal material for a high frequency line conductor,
For example, Cu, MoMn + Ni + Au, W + Ni + Au,
Cr + Cu, Cr + Cu + Ni + Au, Ta ₂ N + Ni
Cr + Au, Ti + Pd + Au, NiCr + Pd + Au
Is formed by a thick film printing method or various thin film forming methods, a plating method, etc., and the thickness and width thereof are also appropriately set according to the frequency and characteristic impedance of the transmitted high frequency signal.

When the line width of the line conductor at the junction between the dielectric wall member and the dielectric substrate is made narrower than the line width at other portions as in the examples of FIGS. , Is appropriately set in accordance with the required specifications between the width corresponding to the ideal characteristic impedance and the line width in other portions.

When the same-plane grounding conductor layer 37 is provided, it may be formed of the same material as the line conductor by the same method, and the distance between the line conductor 34 and the same-plane grounding conductor layer 36 is
It may be a standard setting when a general same-plane ground conductor layer is provided. Further, the dielectric wall member 35 and the dielectric substrate 32
The characteristic impedance matching may be performed more precisely by, for example, projecting the same-plane ground conductor layer 37 toward the line conductor 34 at the joint portion with the line conductor 34. In consideration of the above, it may be appropriately set according to the required characteristics.

The ground conductor layer 3 and the upper surface ground conductor layer 39 and side surface ground conductor layer, which are formed as necessary, may be formed by using the same material as the line conductor and by the same method. As described above, these may be formed by attaching other conductive members such as a metal plate or a metal block in addition to the case where they are formed as the metal coating layer.

Next, the first high frequency semiconductor element housing package of the present invention will be described. In the first package for housing a high frequency semiconductor element of the present invention, a mounting portion for mounting the high frequency semiconductor element is formed on the upper surface of the substrate made of a dielectric material or a metal. This mounting portion is formed on the substrate as a flat surface or in a concave shape. Further, a frame body made of a dielectric material, a metal, or the like is bonded onto the substrate so as to surround the mounting portion, like the substrate.

The frame body is provided with an input / output terminal mounting portion which is made by cutting out the frame body and making the side surfaces and the bottom surface conductive.
In addition, in order to form this input / output terminal mounting portion, a similar notch may be provided in the substrate. The side surface and the bottom surface of the input / output terminal mounting portion are conductive when the substrate and the frame body are made of metal, but are made conductive by forming a conductive layer when the substrate and the frame body are made of a dielectric material. And
Both the side surface and the bottom surface are grounded via the substrate and the frame body or the ground conductor layer adhered to them.

The first high frequency semiconductor element housing package of the present invention is characterized in that the high frequency input / output terminal according to the present invention is joined to the input / output terminal mounting portion together with the frame. is there.

According to the first high frequency semiconductor element housing package of the present invention as described above, the high frequency input / output terminal according to the present invention is used as the structure of the high frequency input / output terminal portion. As a so-called metal wall type package for housing high-frequency semiconductor elements, an electrical connection between line conductors at high-frequency input / output terminals in the transmission of high-frequency signals between the high-frequency semiconductor element housed inside the package and an external electric circuit. The high-frequency characteristics are not deteriorated due to interference, the high-frequency signals are not reflected, and the high-frequency signals have good transmission characteristics, and the high-frequency semiconductor elements housed inside can be prevented from malfunctioning. .

Further, in the high frequency input / output terminal, the width of the line conductor to which the lead terminal is attached can be widened, and the high frequency semiconductor element accommodating package has a high reliability in joining the lead terminals.

Then, the line conductor is connected to the terminal electrode of the high frequency semiconductor element mounted on the mounting portion and the wiring conductor of the external electric circuit via a bonding wire, a ribbon lead terminal or the like, and the high frequency semiconductor inside the package is connected. The element and the external electric circuit are electrically connected, and Fe is provided on the upper surface of the frame body.
-A cover made of Fe-Ni alloy such as -Ni-Co or Fe-Ni42 alloy, oxygen-free copper, aluminum, stainless steel, Cu-W alloy, Cu-Mo alloy, is soldered with AuSn.
A high-frequency semiconductor element is hermetically sealed and housed inside the package by attaching it with a low-melting metal brazing material such as wax, a high-melting metal brazing material such as AuGe wax, or seam welding. As a high frequency semiconductor device.

The substrate and the frame in the first package for housing a high-frequency semiconductor element of the present invention as described above may be the same dielectric as the dielectric of the high-frequency input / output terminal or the above-mentioned lid depending on the package specifications. When the same metal as the body is used and it is made of a dielectric, at least the side surface and the bottom surface of the input / output terminal mounting portion are made conductive.

The substrate and the frame are made of Ag--Cu solder.A.
It is joined by a high melting point metal brazing material such as u-Sn brazing or Au-Ge brazing. Further, the high frequency input / output terminal is fitted in the input / output terminal mounting portion, and is joined to the frame and the substrate with a similar high melting point metal brazing material or the like.

The upper surface of the dielectric wall member of the high frequency input / output terminal fitted to the input / output terminal mounting portion is flush with the upper surface of the frame body as a notch reaching the upper surface of the frame body. In this way, by attaching the lid directly to these upper surfaces or via a frame-shaped metal seal, etc., the high-frequency semiconductor element mounted on the mounting part can be easily mounted inside. Can be hermetically sealed. Also,
At this time, if the upper surface of the dielectric wall member and the upper surface of the frame body are not flush with each other, the high-frequency semiconductor element is also internally sealed by a lid body shaped to fill the step or through a metal seal. Can be hermetically sealed.

If necessary, a plurality of high-frequency input / output terminals may be installed in parallel by providing a plurality of input / output terminal mounting portions.

In addition, when a top ground conductor layer or a side ground conductor layer is added to the high frequency input / output terminal, a large number of through conductors may be arranged or connected in addition to the case of forming the metal conductor layer. As a result, it may be made to function as a continuous ground conductor layer in the same manner as the coating layer, or may be formed by attaching a metal plate or a metal block.

Next, a second high frequency semiconductor device housing package of the present invention will be described. In the second package for housing a high-frequency semiconductor element of the present invention, the substrate is a dielectric substrate, and is made of the same material as the dielectric substrate or the dielectric wall member of the above-mentioned high-frequency input / output terminal and has a lower surface. The grounding conductor layer is formed, and the upper surface thereof has a mounting portion formed in a flat surface shape or a concave shape for mounting a high frequency semiconductor element. A plurality of line conductors are formed in parallel with each other on the upper surface of the dielectric substrate from the vicinity of the mounting portion to the vicinity of the outer periphery of the dielectric substrate, and the mounting portion is surrounded on the dielectric substrate. A dielectric frame body having a lower dielectric constant than the rest of the upper portion of the line conductor, which sandwiches each part of the line conductor, is joined.

In the second package for housing a high frequency semiconductor element of the present invention, at least one side of the dielectric frame body, that is, one side with the dielectric frame body as a boundary,
Width of 0.2mm or more on the dielectric substrate between multiple line conductors,
It is characterized in that the effective permittivity around the line conductor is made lower than that when there is no groove by providing the groove of the air layer whose depth is ½ or more of the thickness of the dielectric substrate.

The groove may be provided only on the outer side or the inner side of the dielectric frame body, or may be provided on the outer side and the inner side at the same time. In particular, when it is provided on the outside, the width of the line conductor can be made larger than that of the conventional one while the impedance matching of the line conductor is achieved, and the attachment strength of the lead terminal can be sufficiently secured, which is more preferable.

Further, this groove may be formed as a notch portion penetrating the dielectric substrate. However, it is not preferable to penetrate the dielectric substrate with respect to the groove inside the dielectric frame in order to hermetically seal the package. However, even when the inner groove is provided through the dielectric substrate, another dielectric substrate, metal base, heat dissipation member, etc. is attached to the lower surface of the dielectric substrate so as to cover the through groove. Airtightness can be secured by doing so.

According to the second package for accommodating a high frequency semiconductor element of the present invention having such a configuration, the high frequency signal input / output terminal portion having the same configuration as the high frequency input / output terminal according to the present invention is provided. Therefore, as a so-called ceramic wall type package for housing high-frequency semiconductor elements, between the line conductors at the high-frequency input / output terminals in the transmission of high-frequency signals between the high-frequency semiconductor elements housed inside the package and the external electric circuit. High-frequency characteristics are not deteriorated by electrical interference of the high-frequency signal, high-frequency signals are not reflected, good transmission characteristics for high-frequency signals are generated, and high-frequency semiconductor elements housed inside may malfunction. Can be prevented.

Further, in the input / output terminal portion located outside the dielectric frame, the width of the line conductor to which the lead terminal is attached can be widened as described above, and the reliability of the joining of the lead terminals is high. It becomes a package for housing high frequency semiconductor elements.

According to the second package for housing a high-frequency semiconductor element of the present invention, a bonding wire is used for the terminal electrode of the high-frequency semiconductor element mounted on the mounting portion and the wiring conductor of the external electric circuit. And ribbons
A high-frequency semiconductor element inside the package is electrically connected to an external electric circuit by connecting via a lead terminal, etc., and a lid made of the above-mentioned material is attached to the upper surface of the dielectric frame by the attachment method described above. By wearing, the high frequency semiconductor element is hermetically sealed and housed inside the package, and a high frequency semiconductor device as a product is obtained.

As the dielectric substrate and the dielectric frame,
A dielectric similar to the dielectric of the high frequency input / output terminal according to the present invention may be used according to the package specifications. Further, it is desirable that the ground conductor layer is formed on the entire surface of the lower surface of the dielectric substrate, because the ground conductor layer can be in an ideal ground state.

Further, the dielectric substrate and the dielectric frame are separately joined, and, for example, after firing, ceramic green sheets to be the dielectric substrate and the dielectric frame are laminated and fired. They may be joined together by integrating them. For the line conductor, the ground conductor layer, or the same-face ground conductor layer, the top-face ground conductor layer, the side-face ground conductor layer, and the through conductor, which are formed as necessary, for example, a conductor paste is applied to the dielectric substrate and the dielectric frame, respectively. It is formed by printing or embedding it in a predetermined pattern, baking it on a dielectric substrate / dielectric frame, and integrating them to form a cover.

A portion of the high-frequency input / output terminal portion of the dielectric frame body corresponding to the above-mentioned dielectric wall member is integrated with the dielectric frame body, and its upper surface is flush with the upper surface of the dielectric frame body. By doing so, by attaching the lid directly to these upper surfaces or via a frame-shaped metal seal or the like, the high-frequency semiconductor element mounted on the mounting portion can be easily hermetically sealed and housed inside. . Further, there may be a step in this portion as described above.

Furthermore, the permittivity of the portion corresponding to the dielectric wall member is set lower than that of the other portions of the dielectric frame, and the propagation modes of the high frequency signal before and after the hermetically sealed portion are made closer, The reflection loss and the insertion loss can be effectively reduced.

Needless to say, a plurality of high frequency input / output terminal portions may be provided if necessary.

Further, also in the second package for housing a high frequency semiconductor element of the present invention, the upper surface connecting conductor layer and the side surface connecting conductor layer are provided on the dielectric frame body corresponding to the dielectric wall member of the high frequency input / output terminal portion. When a conductor layer corresponding to is provided, it is possible to form a shield for high frequency signals in which the line conductor is surrounded by a ground conductor layer.

The present invention is not limited to the above examples, and modifications and improvements can be made without departing from the scope of the present invention. For example, although the plurality of line conductors are arranged in parallel to each other, when the whole high frequency input / output terminal or the whole high frequency semiconductor device housing package is seen, the plurality of line conductors are arranged radially as a whole. However, if the relationship is such that adjacent line conductors can be said to be parallel, it does not depart from the scope of the present invention.

The present invention is not limited to the above examples, and modifications and improvements can be made without departing from the scope of the present invention. For example, although the plurality of line conductors are arranged in parallel to each other, when the whole high frequency input / output terminal or the whole high frequency semiconductor device housing package is seen, the plurality of line conductors are arranged radially as a whole. However, if the relationship is such that adjacent line conductors can be said to be parallel, it does not depart from the scope of the present invention.

[0068]

According to the high frequency input / output terminal of the present invention,
By providing an air layer groove having a width of 0.2 mm or more and a depth of ½ or more of the thickness of the dielectric substrate on the dielectric substrate between the plurality of line conductors on at least one side of the dielectric wall member, Since the effective permittivity around the conductor was made lower than that when there was no groove, the air groove was present in this part, and the capacitance value between the line conductors was reduced, causing electrical interference that adversely affects high frequency characteristics. Is reduced. In addition, since an air layer with a small relative permittivity exists near the line conductor due to the groove, the effective permittivity around the line conductor becomes low, which changes the width of the line conductor to perform impedance matching and high frequency. When the signal reflection is reduced, the width of the line conductor can be made wider than that of the conventional high-frequency input / output terminal. Therefore, it is possible to secure sufficient bonding strength.

Then, the groove penetrates the dielectric substrate,
If a cutout is provided on the dielectric substrate between the line conductors,
The dielectric substrate between the line conductors is completely separated by the air layer, and the above-described action and effect due to the groove can be more suitably exhibited.

Further, according to the first high frequency semiconductor element accommodating package of the present invention, since the high frequency input / output terminal of the present invention is used as the structure of the input / output terminal portion, high frequency The electrical interference that adversely affects the characteristics is reduced, high-frequency signals are not reflected, and the width of the line conductor can be widened. The width can be widened and sufficient bonding strength can be secured.

Further, according to the second package for housing a high frequency semiconductor element of the present invention, the high frequency input / output terminal portion is the same as the high frequency input / output terminal according to the present invention on at least one side of the dielectric frame. Since the input / output terminal portion in which the groove is formed is provided, electrical interference that adversely affects the high-frequency characteristics is caused, like the high-frequency input / output terminal of the present invention and the first high-frequency semiconductor element housing package. It is possible to widen the width of the line conductor without reducing the reflection of high frequency signals, and to widen the bonding area of the lead terminal in the case of the specification to attach the lead terminal to the line conductor, it is sufficient bonding. The strength can be secured.

As described above, according to the present invention, even when the space between the line conductors is narrowed and there is no room to provide the same-plane grounding conductor layer or the like, the high frequency signal is reflected on the line conductors and the electrical interference between the line conductors is caused. It was possible to provide a high-frequency input / output terminal and a high-frequency semiconductor element accommodating package that can reduce deterioration of high-frequency characteristics due to the above, and have no problems in manufacturing due to attachment of lead terminals and the like and that have good high-frequency characteristics.

[Brief description of drawings]

1A to 1C are perspective views showing an example of an embodiment of a high-frequency input / output terminal of the present invention, a plan view showing a part thereof, and a cross section taken along the line AA ′ in FIG. 1B. It is a figure.

2 (a) to 2 (c) are perspective views showing another example of the embodiment of the high-frequency input / output terminal of the present invention, a plan view showing a part thereof as seen through, and FIG. 'It is a sectional view.

3 (a) and 3 (b) are respectively a plan view showing a part of another example of the embodiment of the high frequency input / output terminal of the present invention and a sectional view taken along the line BB ′ of FIG. 3 (a). Is.

4A to 4C are perspective views each showing an example of a conventional high-frequency input / output terminal, a plan view showing a part thereof,
It is an AA 'sectional view of (b).

5 (a) and 5 (b) are respectively a plan view showing another example of a conventional high-frequency input / output terminal with a part thereof seen through and a cross-sectional view taken along line AA 'of FIG. 5 (a).

[Explanation of symbols]

11, 21, 31 ・ ・ ・ ・ ・ High frequency input / output terminals 12, 22, 32 ... Dielectric substrate 13, 23, 33 ... Ground conductor layer 14, 24, 34 ... Line conductors 15, 25, 35 ・ ・ ・ ・ ・ Dielectric wall member 16, 26, 36 ・ ・ ・ ・ ・ Groove

Claims (5)

(57) [Claims] And forming the flat row to each other a plurality of line conductors to 1. A top surface of the dielectric substrate a ground conductor layer formed on the lower surface, each of the line conductor against the respective line conductors straight direction orthogonal A strip-shaped dielectric wall member having a dielectric constant lower than that of the dielectric substrate sandwiching a part of the dielectric wall member, and having a width on the dielectric substrate between the line conductors on at least one side of the dielectric wall member. Is 0.2 mm or more and the depth is not less than ½ of the thickness of the dielectric substrate, so that the effective permittivity around the line conductor is lower than that without the groove. High frequency input / output terminal characterized by the following. 2. The high frequency input / output terminal according to claim 1, wherein the groove penetrates the dielectric substrate. 3. A frame is bonded on a substrate having a mounting portion for mounting a high frequency semiconductor element on an upper surface so as to surround the mounting portion, and the frame is cut out to make its bottom surface conductive. And a high-frequency input / output terminal according to claim 1 or 2 is fitted to the input / output terminal mounting portion. . 4. A mounting portion for mounting a high-frequency semiconductor element on the upper surface of a dielectric substrate having a ground conductor layer formed on the lower surface, and a mounting portion near the mounting portion and a portion near the outer periphery of the dielectric substrate.
To thereby form a plurality of line conductors arranged in flat row, the surrounds a dielectric the mounting portion on the substrate sandwich a portion of each of said line conductors, the dielectric of the upper portion of該線path conductors A dielectric frame having a lower ratio than the rest is joined, and the dielectric substrate between the line conductors has a width of 0.2 mm or more and a depth of the dielectric substrate on at least one side of the dielectric frame. By providing a groove of an air layer having a thickness of ½ or more of the thickness of the above, the effective dielectric constant around the line conductor is made lower than that without the groove. 5. The high frequency semiconductor element housing package according to claim 4, wherein the groove penetrates the dielectric substrate.