JPH1133503A - Substrate-treatment device - Google Patents

Substrate-treatment device

Info

Publication number
JPH1133503A
JPH1133503A JP19860797A JP19860797A JPH1133503A JP H1133503 A JPH1133503 A JP H1133503A JP 19860797 A JP19860797 A JP 19860797A JP 19860797 A JP19860797 A JP 19860797A JP H1133503 A JPH1133503 A JP H1133503A
Authority
JP
Japan
Prior art keywords
substrate
liquid
nozzle
processing
transport direction
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19860797A
Other languages
Japanese (ja)
Other versions
JP3550277B2 (en
Inventor
Mitsuaki Yoshitani
光明 芳谷
Kazuo Kise
一夫 木瀬
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Dainippon Screen Manufacturing Co Ltd
Original Assignee
Dainippon Screen Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dainippon Screen Manufacturing Co Ltd filed Critical Dainippon Screen Manufacturing Co Ltd
Priority to JP19860797A priority Critical patent/JP3550277B2/en
Publication of JPH1133503A publication Critical patent/JPH1133503A/en
Application granted granted Critical
Publication of JP3550277B2 publication Critical patent/JP3550277B2/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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  • Cleaning By Liquid Or Steam (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a substrate-treatment device in which treatment of the substrate is more properly performed. SOLUTION: In the treatment device of a substrate, the substrate W is carried in a state tilted for a horizontal face by a carrier rollers 18 of a carrier mechanism and also a nozzle 22 equipped with slitlike discharge ports 22a is fixed oppositely to the substrate W. Pure water is sprayed on the surface of the substrate by the nozzle 22 to clean the substrate W. The nozzle 22 is formed in a state tilted so as to form an angle θ2 for the carrier direction so that the upper end part in the oblique direction of the substrate is positioned on the upstream side in the carrier direction than the lower end part. Further, the nozzle 22 is arranged in a state being tilted for the substrate W so that discharged flow is directed on the upper stream side in the carrier direction than just under the nozzle 22.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は、液晶表示装置用ガ
ラス基板、プラズマディスプレイ用ガラス基板、プリン
ト基板、半導体ウエハ等の基板の処理装置において、特
に、水平面に対して基板を傾斜させた状態、あるいは起
立させた状態で搬送しながら基板に対して処理液を吹き
付けて処理を施すようにした基板処理装置に関するもの
である。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an apparatus for processing a substrate such as a glass substrate for a liquid crystal display device, a glass substrate for a plasma display, a printed circuit board, and a semiconductor wafer. Alternatively, the present invention relates to a substrate processing apparatus that performs processing by spraying a processing liquid onto a substrate while transporting the substrate in an upright state.

【0002】[0002]

【従来の技術】従来から、液晶表示装置用ガラス基板等
の基板処理装置として、例えば、図8に示すように、ロ
ーラコンベア51によって角形基板Wを水平面に対して
角度θ0だけ傾けた姿勢とし、水平面と平行で、かつ傾
斜方向(図8で左右方向)と直交する方向に基板Wを搬
送しながら基板Wに純水、洗浄液等の各種処理液を供給
するようにしたいわゆる傾斜式の基板処理装置が知られ
ている。
2. Description of the Related Art Conventionally, as a substrate processing apparatus such as a glass substrate for a liquid crystal display device, for example, as shown in FIG. 8, a roller conveyor 51 has a rectangular substrate W inclined by an angle θ 0 with respect to a horizontal plane. A so-called tilt type substrate that supplies various processing liquids, such as pure water and a cleaning liquid, to the substrate W while transporting the substrate W in a direction parallel to the horizontal plane and orthogonal to the tilt direction (the horizontal direction in FIG. 8). Processing devices are known.

【0003】このような基板処理装置では、基板の上方
端部に供給した薬液を基板表面に沿って流下させること
により基板表面に薬液処理を施しつつ、処理に供した薬
液を基板の下方端部から落下させて捕集するようになっ
ている。そのため、余分な薬液が基板表面に留まること
がなく液切れが良好であるという特徴がある。
In such a substrate processing apparatus, the chemical supplied to the upper end of the substrate is caused to flow down along the surface of the substrate to perform the chemical processing on the substrate surface, and the chemical used for the processing is applied to the lower end of the substrate. Drop from and collect. For this reason, there is a feature that the excess chemical solution does not stay on the substrate surface and the drainage is good.

【0004】ところで、基板処理では一般に薬液処理が
終了する毎に、基板Wに純水等による洗浄処理を施す
が、上記のような基板処理装置では、通常、図9に示す
ように、搬送方向と直交する方向、すなわち基板Wの傾
斜方向に延びるスリット状の液吐出口52aを備えたノ
ズル52を基板Wに対向して設け、基板Wがノズル52
を通過する際に純水を吐出させて、その水圧で基板Wに
洗浄処理を施すようになっている。
By the way, in the substrate processing, the substrate W is generally subjected to a cleaning treatment with pure water or the like every time the chemical treatment is completed. However, in the substrate processing apparatus as described above, as shown in FIG. A nozzle 52 having a slit-like liquid discharge port 52a extending in a direction perpendicular to the substrate W, that is, in a direction in which the substrate W is inclined, is provided so as to face the substrate W;
The pure water is discharged when passing through the substrate W, and the substrate W is subjected to a cleaning process at the water pressure.

【0005】[0005]

【発明が解決しようとする課題】ところが、上記従来の
装置では、基板表面に吹き付けられた純水が、ノズル5
2の両側、すなわち基板Wの搬送方向両側に円弧を描い
て広く拡がりながら流下する(図9中に一点鎖線で示
す)ため、基板Wの上方部分(図9では上側部分)に吹
き付けられた純水が基板外に流れ落ちるのに時間がかか
り、大型の基板では、上方部分で除去されたパーティク
ル等が下方部分で再度、基板に付着するといった現象が
生じ易い。特に、ノズル52よりも基板搬送方向の下流
側(図9では右側)でこのような現象が生じると、洗浄
処理が不完全な状態で基板Wが次工程に送られることと
なり、これが基板品質を低下させる原因の一つとなる。
However, in the above-mentioned conventional apparatus, the pure water sprayed on the substrate surface uses the nozzle 5
2, that is, flows down while widening in a circular arc on both sides in the transport direction of the substrate W (indicated by a dashed line in FIG. 9). It takes time for water to flow out of the substrate, and in a large-sized substrate, a phenomenon that particles or the like removed in the upper portion adhere to the substrate again in the lower portion is likely to occur. In particular, when such a phenomenon occurs on the downstream side of the nozzle 52 in the substrate transport direction (the right side in FIG. 9), the substrate W is sent to the next step in a state where the cleaning process is incomplete, which reduces the substrate quality. It is one of the causes of lowering.

【0006】また、ノズル52から基板Wに吹き付けら
れた純水の一部がノズル52に沿って流下するため、ノ
ズル52に沿った部分では、基板Wの下方側ほど基板表
面の液量が多く(液厚が厚く)なり、吹き付けられる純
水の水圧が基板Wの上方側と下方側とで均等に作用し難
くい。すなわち、基板Wの下方側では、基板W上の液の
厚みが比較的厚いため、吹き付けられる純水の水圧が基
板表面に伝わり難くなる。そのため、基板の洗浄が不均
一になり易いという問題もある。
Further, since a part of the pure water blown from the nozzle 52 onto the substrate W flows down along the nozzle 52, the liquid amount on the surface of the substrate becomes larger below the substrate W in the portion along the nozzle 52. (The liquid thickness becomes thicker), and it is difficult for the water pressure of the sprayed pure water to act evenly on the upper side and the lower side of the substrate W. That is, since the thickness of the liquid on the substrate W is relatively thick below the substrate W, it is difficult for the water pressure of the sprayed pure water to be transmitted to the substrate surface. Therefore, there is a problem that cleaning of the substrate is likely to be uneven.

【0007】なお、このような問題は上述のような基板
Wの洗浄処理以外に、基板Wの現像、エッチングあるい
は剥離処理等においても同様に言えることであり、これ
らの各基板処理においても同様に解決が望まれている。
[0007] Such a problem can be similarly applied to the development, etching, or peeling processing of the substrate W in addition to the cleaning processing of the substrate W as described above. A solution is desired.

【0008】本発明は、上記問題を解決するためになさ
れたものであり、水平面に対して基板を傾斜させた状
態、あるいは起立させた状態で搬送しながら処理液を吹
き付けて処理を施すようにした装置において、基板処理
をより適切に行うことができる基板処理装置を提供する
ことを目的としている。
SUMMARY OF THE INVENTION The present invention has been made to solve the above-mentioned problem, and is intended to perform processing by spraying a processing liquid while transporting a substrate in a state where the substrate is inclined with respect to a horizontal plane or in a state where the substrate is raised. It is an object of the present invention to provide a substrate processing apparatus capable of performing substrate processing more appropriately in the above apparatus.

【0009】[0009]

【課題を解決するための手段】上記課題を解決するため
に、本発明は、水平面に対して所定の角度をなす基板姿
勢方向に傾斜あるいは起立させた基板を、当該基板姿勢
のまま、前記水平面と平行で、かつ前記基板姿勢方向と
直交する搬送方向に搬送しつつ、該基板の表面と対向配
置された液吐出手段から基板表面に処理液を供給する基
板処理装置において、前記液吐出手段が、前記基板姿勢
方向における上方端部が下方端部よりも前記搬送方向に
おける上流側に位置するように、前記搬送方向に対して
角度をなすように配置されたものである(請求項1)。
In order to solve the above-mentioned problems, the present invention provides a method of manufacturing a semiconductor device, comprising: tilting or raising a substrate in a substrate attitude direction at a predetermined angle with respect to a horizontal plane while maintaining the substrate attitude in the horizontal plane. In a substrate processing apparatus that supplies a processing liquid to a substrate surface from a liquid discharging unit disposed opposite to a surface of the substrate while transporting the substrate in a transport direction that is parallel to and perpendicular to the substrate posture direction, the liquid discharging unit includes: The upper end in the substrate posture direction is arranged at an angle to the transport direction such that the upper end is located upstream of the lower end in the transport direction (claim 1).

【0010】この装置によれば、基板表面に吹き付けら
れた処理液が基板下方側に向かってより直線的に流れる
ため、従来のこの種の装置に比べると、処理に供した処
理液をより速やかに基板外へと流出させることができ
る。
According to this apparatus, since the processing liquid sprayed on the substrate surface flows more linearly toward the lower side of the substrate, the processing liquid subjected to the processing can be more quickly compared to a conventional apparatus of this type. Can flow out of the substrate.

【0011】また、液吐出手段よりも搬送方向上流側の
部分に処理液が集中して流れるため、基板の特定の部分
に対し、単位時間当たりに豊富な処理液を供給すること
が可能となる。そのため、例えば、洗浄処理ではパーテ
ィクル等が基板外へと流出し易くなり、パーティクル等
の除去効果が高められる。逆に、液吐出手段よりも搬送
方向下流側に処理液が流れ難くいため、処理が終了した
部分へのパーティクル等の再付着が効果的に抑えられ
る。
Further, since the processing liquid flows intensively in a portion upstream of the liquid discharging means in the transport direction, it becomes possible to supply abundant processing liquid per unit time to a specific portion of the substrate. . Therefore, for example, particles and the like easily flow out of the substrate in the cleaning process, and the effect of removing the particles and the like is enhanced. Conversely, the processing liquid is less likely to flow downstream in the transport direction than the liquid discharging means, so that reattachment of particles and the like to the portion where processing has been completed is effectively suppressed.

【0012】さらに、基板姿勢方向における上方端部が
下方端部よりも前記搬送方向における上流側に位置する
ように液吐出手段が搬送方向に対して角度をなすように
設けられているため、基板表面に吹き付けられた処理液
が液吐出手段に沿って流下し難い。そのため、液吐出手
段に沿った部分での基板表面の液量(液厚)に差が生じ
難く、処理液の液圧を基板全体に均等に作用させること
が可能となる。
Further, since the liquid discharging means is provided at an angle with respect to the transport direction so that an upper end in the substrate posture direction is located upstream of the lower end in the transport direction, the substrate is provided at an angle. The processing liquid sprayed on the surface is difficult to flow down along the liquid discharging means. For this reason, a difference in the liquid amount (liquid thickness) on the substrate surface in the portion along the liquid discharge means is unlikely to occur, and the liquid pressure of the processing liquid can be applied uniformly to the entire substrate.

【0013】特に、搬送方向の上流側に向かって処理液
を吐出するように、前記液吐出手段を基板表面に対して
角度をなして設けるようにすれば(請求項2)、処理に
供した処理液をより速やかに基板外へと流出させること
ができる。また、処理に供した処理液を確実に液吐出手
段よりも搬送方向の上流側の部分に流下させることがで
きる。
In particular, the liquid discharging means is provided at an angle to the substrate surface so as to discharge the processing liquid toward the upstream side in the transport direction (claim 2). The processing liquid can flow out of the substrate more quickly. Further, the processing liquid used for the processing can be surely caused to flow down to the portion on the upstream side in the transport direction from the liquid discharging means.

【0014】また、請求項1又は2記載の装置におい
て、前記液吐出手段を、基板に対する処理液の吐出領域
を前記基板姿勢方向に分割する複数の単位液吐出手段か
ら構成するとともに、前記基板姿勢方向における下方側
の単位液吐出手段の上方端部が上方側の単位液吐出手段
の下方端部よりも前記搬送方向の上流側に位置するよう
に配置すれば(請求項3)、液吐出手段の前記搬送方向
の省スペース化を図ることができる。
3. The apparatus according to claim 1, wherein said liquid discharging means comprises a plurality of unit liquid discharging means for dividing a processing liquid discharge area on a substrate in the substrate posture direction. If the upper end of the unit liquid discharging means on the lower side in the direction is arranged so as to be located upstream of the lower end of the upper unit liquid discharging means in the transport direction (claim 3), the liquid discharging means In the transport direction can be saved.

【0015】さらに、請求項1乃至3のいずれかに記載
の装置おいて、基板姿勢方向に延びるスリット状の液吐
出口から処理液を吐出するように前記液吐出手段を構成
するようにすれば(請求項4)、基板に対してよりムラ
無く処理液の液圧を作用させることができる。
Further, in the apparatus according to any one of claims 1 to 3, the liquid discharging means is configured to discharge the processing liquid from a slit-shaped liquid discharging port extending in the posture direction of the substrate. (Claim 4) The liquid pressure of the processing liquid can be applied to the substrate more evenly.

【0016】[0016]

【発明の実施の形態】本発明の実施の形態について図面
を用いて説明する。
Embodiments of the present invention will be described with reference to the drawings.

【0017】図1は、本発明に係る基板処理装置である
水洗装置の一の実施の形態を示す斜視図である。この図
に示すように、水洗装置10は、箱型の処理槽12を有
しており、この処理槽12の内部に、角形の基板Wを搬
送するための搬送機構16と、基板Wに純水を吹き付け
るためのノズル22(液吐出手段)とを備えている。
FIG. 1 is a perspective view showing one embodiment of a water washing apparatus as a substrate processing apparatus according to the present invention. As shown in this figure, the water washing apparatus 10 has a box-shaped processing tank 12, and inside the processing tank 12, a transport mechanism 16 for transporting a rectangular substrate W, and a pure water A nozzle 22 (liquid discharging means) for spraying water.

【0018】上記処理槽12には、その側面に基板受入
口14が設けられており、処理槽12の内部がこの基板
受入口14を介して隣設された薬液処理装置13の内部
に通じている。つまり、薬液処理装置13において薬液
処理が施された基板Wがこの基板受入口14を介して処
理槽12に導入されるようになっている。
The processing tank 12 is provided with a substrate receiving port 14 on a side surface thereof, and the inside of the processing tank 12 communicates with the inside of a chemical processing apparatus 13 which is adjacent through the substrate receiving port 14. I have. That is, the substrate W that has been subjected to the chemical processing in the chemical processing apparatus 13 is introduced into the processing tank 12 through the substrate receiving port 14.

【0019】上記搬送機構16は、ローラコンベアであ
って、搬送方向に並列に軸支される搬送ローラ18…
と、モータを駆動源としてこれらの搬送ローラ18…を
同期して回転させる駆動機構20とを備えている。そし
て、上記基板受入口14を介して導入される基板Wを受
取り、この基板Wを搬送ローラ18…で支持しながら次
工程に向けて図中白抜き矢印で示す方向へ搬送するよう
に構成されている。
The transport mechanism 16 is a roller conveyor and transport rollers 18 supported in parallel in the transport direction.
And a drive mechanism 20 for rotating these transport rollers 18 in synchronization with a motor as a drive source. Then, it receives the substrate W introduced through the substrate receiving port 14 and transports the substrate W in the direction indicated by the white arrow in the figure toward the next process while supporting the substrate W with the transport rollers 18. ing.

【0020】図2は、基板受入口14側から処理槽12
内のノズル22側を見た断面図である。搬送ローラ18
の回転軸は、図2に示すように、水平面に対して角度θ
1だけ傾斜して設けられており、これにより基板Wが水
平面に対して角度θ1をなす基板姿勢方向Dに傾斜した
状態で搬送方向(同図の紙面に対して垂直上から下方
向)に搬送されるようになっている。ここで、基板姿勢
方向Dと搬送方向との関係をより詳しく説明すると、本
実施形態では、基板Wは進行方向(図1中の白抜き矢印
の方向)を見て右下がりの状態で搬送され、基板姿勢方
向Dと直交する方向のうち水平面と平行な方向が搬送方
向となっている。
FIG. 2 shows the processing tank 12 from the substrate receiving port 14 side.
FIG. 2 is a cross-sectional view of the inner nozzle 22 as viewed from the side. Transport roller 18
2 has an angle θ with respect to the horizontal plane as shown in FIG.
In this state, the substrate W is inclined in the substrate posture direction D that forms an angle θ 1 with respect to the horizontal plane, and the substrate W is inclined in the transport direction (vertical direction from the top to the bottom in FIG. It is designed to be transported. Here, the relationship between the substrate attitude direction D and the transport direction will be described in more detail. In the present embodiment, the substrate W is transported in a downward right direction when viewed in the traveling direction (the direction of the white arrow in FIG. 1). The direction parallel to the horizontal plane among the directions orthogonal to the substrate posture direction D is the transport direction.

【0021】上記ノズル22は、図1及び図2に示すよ
うに、上記搬送機構16の上方において、基板表面と平
行となるように配設されるとともに、液供給管24を介
して純水を貯留した貯水タンク26に接続されている。
As shown in FIGS. 1 and 2, the nozzle 22 is disposed above the transport mechanism 16 so as to be parallel to the substrate surface, and supplies pure water through a liquid supply pipe 24. It is connected to the stored water tank 26.

【0022】ノズル22には、搬送機構16に向かって
開口するスリット状の吐出口22a(液吐出口)が形成
されており、上記液供給管24に介設されたバルブ28
の開閉に応じて搬送中の基板Wに対し、その傾斜方向に
わたって純水を吐出するように構成されている。
The nozzle 22 has a slit-shaped discharge port 22a (liquid discharge port) opened toward the transport mechanism 16, and a valve 28 provided in the liquid supply pipe 24.
Is configured to discharge pure water to the substrate W being transported in accordance with the opening and closing of the substrate W over the direction of its inclination.

【0023】ここで、この装置の特徴として、ノズル2
2は、図3に示すように基板Wの搬送方向に対して角度
をなす状態、詳しくは、基板Wの傾斜方向(基板姿勢方
向D)における上方端部が下方端部よりも搬送方向の上
流側に位置するように搬送方向に対して角度θ2をなし
て配設されており、この実施の形態では、処理効率が最
高となる一態様として角度θ2を45°に設定してい
る。また、図4に示すように、吐出流が直下よりも搬送
方向上流側に向くように搬送中の基板表面に対してノズ
ル22が角度θ3をなして設けられおり、この実施の形
態では、処理効率が最高となる一態様として、この角度
を60°に設定している。
Here, as a feature of this apparatus, the nozzle 2
2 is a state in which an angle is formed with respect to the transport direction of the substrate W as shown in FIG. 3, more specifically, the upper end in the tilt direction (substrate posture direction D) of the substrate W is upstream of the lower end in the transport direction. It is disposed at an angle θ 2 with respect to the transport direction so as to be located on the side, and in this embodiment, the angle θ 2 is set to 45 ° as one mode for maximizing the processing efficiency. Further, as shown in FIG. 4, the nozzle 22 is provided at an angle θ 3 with respect to the surface of the substrate being transported so that the discharge flow is directed to the upstream side in the transport direction from immediately below, and in this embodiment, This angle is set to 60 ° as one mode for maximizing the processing efficiency.

【0024】なお、図1中、符号30は搬送機構16の
下方に設けられたドレンパンで、ノズル22から吐出さ
れて基板の洗浄に供された純水がこのドレンパン30内
に流下、捕集されるようになっている。
In FIG. 1, reference numeral 30 denotes a drain pan provided below the transport mechanism 16, and pure water discharged from the nozzle 22 and used for cleaning the substrate flows down and is collected in the drain pan 30. It has become so.

【0025】上記構成の水洗装置10において、薬液処
理を終えた基板Wが基板受入口14を介して処理槽12
内に導入されると、搬送機構16により当該基板Wが搬
送されつつノズル22によって純水が吹き付けられ、そ
の水圧で基板Wに付着したパーティクルや薬液処理の残
渣等が剥離されて除去洗浄される。
In the water washing apparatus 10 having the above-mentioned structure, the substrate W having been subjected to the chemical treatment is transferred to the processing tank 12 through the substrate receiving port 14.
When the substrate W is introduced into the chamber, the substrate W is transported by the transport mechanism 16 and sprayed with pure water by the nozzle 22, and the particles adhered to the substrate W and the residue of the chemical solution treatment are peeled off by the water pressure and removed and washed. .

【0026】そして、剥離されたパーティクル等が純水
と供に基板Wに沿って流下し、基板端部からドレンパン
30内に流れ落ちることにより基板Wからパーティクル
等が除去されることとなる。
Then, the separated particles and the like flow down along the substrate W together with the pure water, and flow down from the end of the substrate into the drain pan 30, whereby the particles and the like are removed from the substrate W.

【0027】この際、上記の水洗装置10では、上述の
ように、基板Wの傾斜方向における上方端部が下方端部
よりも搬送方向の上流側に位置するようにノズル22が
搬送方向に対して角度θ2だけ傾斜した状態で配設さ
れ、しかも、吐出流が直下よりも搬送方向上流側に向く
ようにノズル22が基板表面に対して角度θ3だけ傾斜
した状態で設けられているので、図5に示すように、基
板Wに吹き付けられた純水がノズル22よりも搬送方向
上流側において、基板Wの下方側に向かって略直線的に
流下することとなる。
At this time, as described above, in the above-described water washing apparatus 10, the nozzle 22 is moved with respect to the transport direction so that the upper end of the substrate W in the inclined direction is located upstream of the lower end in the transport direction. Te is disposed in a state inclined by an angle theta 2, moreover, the nozzle 22 as the discharge flow is directed in the conveying direction upstream side from just below is provided in a state inclined by an angle theta 3 to the substrate surface As shown in FIG. 5, the pure water sprayed on the substrate W flows substantially linearly toward the lower side of the substrate W upstream of the nozzle 22 in the transport direction.

【0028】そのため、従来のこの種の装置に比べる
と、基板Wに吹き付けられた純水が極めて速やかに基板
外へと流出することとなり、例えば、基板Wが大型の基
板であっても、従来のように一旦剥離されたパーティク
ル等が基板Wに再付着するといったことが効果的に抑え
られる。また、処理に供された純水がノズル22よりも
搬送方向の上流側を流下するため、従来のように、処理
に供された純水がノズル22よりも搬送方向の下流側、
つまり基板洗浄が終了した部分を流下してパーティクル
等を再付着させるようなことがない。
[0028] Therefore, compared with this type of conventional apparatus, the pure water sprayed on the substrate W flows out of the substrate very quickly. For example, even if the substrate W is a large substrate, As described above, it is possible to effectively suppress the particles and the like once separated from re-adhering to the substrate W. In addition, since the pure water supplied for processing flows down the upstream side in the transport direction from the nozzle 22, the pure water supplied for processing flows downstream from the nozzle 22 in the transport direction as in the related art.
That is, there is no possibility that particles or the like are reattached by flowing down the portion where the substrate cleaning is completed.

【0029】さらに、基板の傾斜方向Dに対してノズル
22が斜めに配置されるため、基板Wに吹き付けられた
純水がノズル22に沿って流下することがなく、ノズル
22に沿った部分での基板表面の液量(液厚)に差が生
じ難い。そのため、基板Wに吹き付けられる純水の水圧
が基板全体に略均等に作用し、これによって基板全体に
より均一な洗浄処理を施すことができる。
Further, since the nozzles 22 are arranged obliquely with respect to the tilt direction D of the substrate, the pure water sprayed on the substrate W does not flow down along the nozzles 22, but at the portions along the nozzles 22. The difference in the liquid amount (liquid thickness) on the substrate surface is unlikely to occur. Therefore, the water pressure of the pure water sprayed on the substrate W acts substantially evenly on the entire substrate, whereby a more uniform cleaning process can be performed on the entire substrate.

【0030】従って、この水洗装置10によれば、上述
のようにパーティクル等の再付着を効果的に防止するこ
とができるとともに、基板全体に純水の水圧を均等に作
用させて洗浄を行うことができるので、従来のこの種の
装置と比較すると、基板Wの洗浄処理をより適切に行う
ことができる。
Therefore, according to the water washing apparatus 10, it is possible to effectively prevent the reattachment of particles and the like as described above, and to perform the washing by uniformly applying the pure water pressure to the entire substrate. Therefore, the cleaning process of the substrate W can be more appropriately performed as compared with a conventional apparatus of this type.

【0031】なお、上記水洗装置10では、上記のよう
に、基板Wの傾斜方向Dにおける上方端部が下方端部よ
りも搬送方向の上流側に位置するようにノズル22が基
板搬送方向に対し角度θ2だけ角度を有した状態で設け
られているため、従来のこの種の装置と同一構成のノズ
ルを用いながらも単位面積当たりの純水の吹き付け時間
を長くすることができるという利点もある。つまり、吐
出口の形状が同一であれば、図6(a),(b)に示す
ように、ノズルを搬送方向と直交する方向に配設した場
合の吐出口の搬送方向長さL1より、ノズルを傾けて配
置したときの吐出口の搬送方向長さL2の方が長くな
る。そのため、ノズル22が搬送方向に対して角度θ2
だけ傾けて設けられている上記水洗装置10では、従来
のこの種の装置と同一構造のノズルを用いる場合でも単
位面積当たりの純水の吹き付け時間が長くなり、その
分、基板Wの洗浄をより確実に行うことができるという
利点もある。
As described above, in the washing device 10, the nozzle 22 is moved with respect to the substrate transfer direction such that the upper end of the substrate W in the inclination direction D is located upstream of the lower end in the transfer direction. because it is provided in a state where an angle by an angle theta 2, there is also an advantage that it is possible to increase the blowing time of pure water per unit area while using a nozzle of this type of conventional device having the same configuration . That is, if the shape of the discharge port is the same, FIG. 6 (a), the (b), the more the transport direction length L 1 of the discharge port in the case of arranged in a direction perpendicular to the conveying direction of the nozzle , it is longer in the conveying direction length L 2 of the discharge port when placed tilting the nozzle. Therefore, the angle of the nozzle 22 with respect to the transport direction is θ 2.
In the above-described water washing apparatus 10 which is provided only at an inclined angle, even when a nozzle having the same structure as that of a conventional apparatus of this type is used, the time for spraying pure water per unit area becomes long, and the washing of the substrate W is accordingly improved. There is also an advantage that it can be performed reliably.

【0032】ところで、上記水洗装置10は、本発明に
係る基板処理装置の一実施形態であって、その具体的な
構成は、本発明の要旨を逸脱しない範囲で適宜変更可能
である。
Incidentally, the water washing apparatus 10 is an embodiment of the substrate processing apparatus according to the present invention, and the specific configuration thereof can be appropriately changed without departing from the gist of the present invention.

【0033】例えば、上記水洗装置10では、1つのノ
ズル22により純水を吹き付けるようにしているが、複
数のノズルにより純水を吹き付けるようにしてもよい。
例えば、図7に示すように、同一構成の2つのノズル3
0a,30b(単位液吐出手段)を設け、各ノズル30
a,30bがそれぞれ吹き付け領域を基板Wの傾斜方向
に2分し、かつ各ノズル30a,30bはそれぞれの上
方端部が下方端部よりも搬送方向の上流側に位置し、さ
らに吐出流が直下よりも搬送方向上流側を向くように互
いに平行に配置したノズル構成を採用するようにしても
よい。また、それらのノズル30a,30bは、基板W
の傾斜方向における下方側のノズル30bの上端が上方
側のノズル30aの下端よりも搬送方向の上流側にずれ
るように配設されている。
For example, in the water washing apparatus 10, pure water is blown by one nozzle 22, but pure water may be blown by a plurality of nozzles.
For example, as shown in FIG.
0a, 30b (unit liquid discharging means) are provided.
The nozzles 30a and 30b each divide the spray area into two in the direction of inclination of the substrate W, and the upper ends of the nozzles 30a and 30b are located upstream of the lower ends in the transport direction, and the discharge flow is directly below. Alternatively, a nozzle configuration in which the nozzles are arranged in parallel with each other so as to face the upstream side in the transport direction may be employed. The nozzles 30a and 30b are connected to the substrate W
Are arranged such that the upper end of the lower nozzle 30b in the inclined direction is shifted to the upstream side in the transport direction from the lower end of the upper nozzle 30a.

【0034】この構成によれば、上記実施形態のノズル
22に比べると搬送方向のノズルの占有スペースが半分
ですむため、ノズルのスペース効率を高めることができ
るという利点がある。この場合、吹き付け領域を基板W
の傾斜方向に3分、あるいはそれ以上に分割し得るよう
に複数のノズルを設けるようにしてもよい。なお、この
構成の場合、基板全体に純水を吹き付けることができれ
ば、各ノズルを必ずしも同一の構成とする必要なく、例
えば、吐出口の基板Wの傾斜方向における寸法が互いに
異なるノズルを用いるようにしてもよい。
According to this configuration, the space occupied by the nozzle in the transport direction is halved as compared with the nozzle 22 of the above embodiment, and thus there is an advantage that the space efficiency of the nozzle can be improved. In this case, the spray area is set to the substrate W
A plurality of nozzles may be provided so that the nozzles can be divided into three minutes or more in the inclination direction. In addition, in the case of this configuration, if pure water can be sprayed on the entire substrate, the nozzles do not necessarily have to have the same configuration.For example, nozzles having different discharge ports in the inclined direction of the substrate W may be used. You may.

【0035】また、上記水洗装置10では、吐出流が直
下よりも搬送方向の上流側に向くように、搬送中の基板
表面に対してノズル22が角度θ3だけ傾斜した状態で
設けられているが、吐出流が直下に向くようにノズル2
2を設けても差し支えない。但し、この場合には、上記
水洗装置10に比べると基板Wに沿って流下する純水の
勢いが弱く、また、基板Wに吹き付けられた純水の一部
が多少はノズル22よりも搬送方向の下流側に流下する
こととなる。そのため、洗浄に供した純水をより速やか
に基板外に流出させ、また、基板洗浄が終了した部分へ
のパーティクル等の再付着を確実に防止するという観点
からは上記水洗装置10のようにノズル22を基板表面
に対して角度θ3だけ傾斜した状態で設けるのが好まし
い。
In the water washing apparatus 10, the nozzle 22 is provided at an angle θ 3 with respect to the surface of the substrate being transported so that the discharge flow is directed to the upstream side in the transport direction from immediately below. Nozzle 2 so that the discharge flow is directed
2 may be provided. However, in this case, the force of the pure water flowing down along the substrate W is weaker than that of the washing device 10, and a part of the pure water sprayed on the substrate W is slightly more in the transport direction than the nozzle 22. Will flow downstream. Therefore, from the viewpoint of making the pure water used for washing flow out of the substrate more quickly and reliably preventing particles and the like from re-adhering to the portion where the substrate washing has been completed, the nozzle as in the washing apparatus 10 is used. 22 is preferably provided in a state of being inclined by an angle θ 3 with respect to the substrate surface.

【0036】さらに、上記水洗装置10では、スリット
状の吐出口22aを有したノズル22により基板Wに純
水を吹き付けるようにしているが、単孔から純水を吐出
するスポット状ノズルや、集結配置した多数の孔から純
水を吐出するシャワー状ノズル等、上記ノズル22以外
のノズルを用いて基板Wに純水を吹き付けるようにして
もよい。この場合には、複数のスポット状ノズル等を基
板Wの傾斜方向にわたって並べて配設するようにすれば
よい。
Further, in the water washing apparatus 10, pure water is sprayed on the substrate W by the nozzle 22 having the slit-shaped discharge port 22a. Pure water may be sprayed on the substrate W by using a nozzle other than the nozzle 22 such as a shower nozzle that discharges pure water from a large number of arranged holes. In this case, a plurality of spot-shaped nozzles and the like may be arranged side by side along the tilt direction of the substrate W.

【0037】なお、基板Wを搬送する際の基板Wの傾斜
角度θ1、ノズル22の搬送方向に対する傾斜角度θ2
び基板Wに対するノズル22の傾斜角度θ3の具体的な
値は上記実施形態に限定されるものではなく、具体的な
基板Wの種類、洗浄液の種類、その他の諸条件に応じて
基板Wの洗浄がより良好に行われ得るように適宜選定す
るようにすればよい。但し、搬送方向に対するノズル2
2の傾斜角度θ2については10°〜85°の範囲内、
基板表面に対するノズル22の傾斜角度θ3については
5°〜85°の範囲内で設定するのが好ましい。本発明
者の実験によれば、基板Wの傾斜角度θ1が3°〜10
°の範囲では、上記θ2、θ3の範囲で良好な結果が得ら
れた。
[0037] The inclination angle theta 1 of the substrate W when transferring a substrate W, the inclination angle theta 2 and the inclination angle theta 3 specific value the above embodiments of the nozzle 22 relative to the substrate W with respect to the transport direction of the nozzles 22 However, the present invention is not limited to this, and may be appropriately selected according to the type of the substrate W, the type of the cleaning liquid, and other various conditions so that the substrate W can be more appropriately cleaned. However, the nozzle 2 in the transport direction
The inclination angle θ 2 of 2 is in the range of 10 ° to 85 °,
Inclination angle theta 3 of the nozzle 22 relative to the substrate surface is preferably set within a range of 5 ° to 85 °. According to the experiments conducted by the present inventors, the inclination angle theta 1 of the substrate W 3 ° to 10
In the range of °, good results were obtained in the above ranges of θ 2 and θ 3 .

【0038】また、上記実施形態は、本願発明を水洗装
置10に適用した例であるが、本願発明は、このような
洗浄装置以外にも、現像処理、エッチング処理あるいは
剥離処理等の各処理装置にも適用することができる。ま
た、上記水洗装置10のように基板Wを水平面に対して
傾けた状態で搬送しながら処理を施す装置以外に、表面
が搬送方向と平行、かつ鉛直となるように起立させた状
態で基板Wを搬送しながら処理を施す装置にも適用する
ことができる。
The above-described embodiment is an example in which the present invention is applied to a water washing apparatus 10. However, the present invention is not limited to such a washing apparatus, but may be applied to other processing apparatuses such as a developing process, an etching process, and a peeling process. Can also be applied. In addition to the apparatus for performing the processing while transporting the substrate W while being inclined with respect to the horizontal plane as in the above-described washing apparatus 10, the substrate W may be erected so that the surface is parallel to the transport direction and vertical. It can also be applied to an apparatus that performs processing while transporting.

【0039】[0039]

【発明の効果】以上説明したように、本発明は、水平面
に対して所定の角度をなす基板姿勢方向に傾斜等させた
基板を、当該基板姿勢のまま、水平面と平行で、かつ基
板姿勢方向と直交する搬送方向に搬送しつつ、該基板の
表面と対向配置された液吐出手段から基板表面に処理液
を供給するようにした基板処理装置において、液吐出手
段が、前記基板姿勢方向における上方端部が下方端部よ
りも前記搬送方向における上流側に位置するように搬送
方向に対して角度をなすように配置し、これによって除
去したパーティクル等が速やかに基板外へと流下するよ
うにするとともに、基板全体に処理液の液圧が均等に作
用し得るようにしたので、従来のこの種の装置に比べる
と、より適切に基板の洗浄処理を行うことができる。
As described above, according to the present invention, a substrate inclined at a predetermined angle with respect to a horizontal plane in a substrate posture direction is parallel to the horizontal plane and the substrate posture direction is maintained. In a substrate processing apparatus configured to supply a processing liquid to a substrate surface from a liquid discharging unit disposed opposite to the surface of the substrate while transporting the substrate in a transport direction orthogonal to the substrate, the liquid discharging unit may be configured such that the liquid discharging unit is positioned upward in the substrate posture direction. The end is positioned at an angle with respect to the transport direction such that the edge is located on the upstream side in the transport direction with respect to the lower end, so that the removed particles and the like quickly flow out of the substrate. At the same time, the liquid pressure of the processing liquid can be evenly applied to the entire substrate, so that the substrate can be more appropriately cleaned as compared with a conventional apparatus of this type.

【0040】特に、搬送方向の上流側に向かって処理液
を吐出するように、液吐出手段を基板表面に対して角度
をなして設けるようにすれば(請求項2)、処理に供し
た処理液をより速やかに基板外へと流出させることがで
きるとともに、処理に供した処理液を確実に液吐出手段
よりも搬送方向の上流側の部分に流下させることができ
る。そのため、パーティクル等の基板への再付着をより
確実に防止することができる。
In particular, if the liquid discharge means is provided at an angle to the substrate surface so as to discharge the processing liquid toward the upstream side in the transport direction (claim 2), The liquid can be made to flow out of the substrate more quickly, and the processing liquid used for processing can surely flow down to a portion on the upstream side of the liquid discharging means in the transport direction. Therefore, reattachment of particles and the like to the substrate can be more reliably prevented.

【0041】また、液吐出手段を、基板に対する処理液
の吐出領域を基板姿勢方向に分割する複数の単位液吐出
手段から構成するとともに、基板姿勢方向における下方
側の単位液吐出手段の上方端部が上方側の単位液吐出手
段の下方端部よりも搬送方向の上流側に位置するように
配置すれば、液吐出手段の搬送方向の省スペース化を図
ることができ、特に、大型基板を対象とした装置におい
て有利な構成を提供することができる。
The liquid discharging means comprises a plurality of unit liquid discharging means for dividing a processing liquid discharge area on the substrate in the substrate posture direction, and the upper end of the lower unit liquid discharging means in the substrate posture direction. Is disposed on the upstream side in the transport direction from the lower end of the upper unit liquid discharge unit, it is possible to save space in the transport direction of the liquid discharge unit, and particularly for large substrates. An advantageous configuration can be provided in the device described above.

【0042】さらに、基板姿勢方向に延びるスリット状
の液吐出口から処理液を吐出するように前記液吐出手段
を構成するようにすれば(請求項4)、基板に対してよ
りムラ無く処理液の液圧を作用させることができ、例え
ば、洗浄装置等、液圧が処理の良否に影響を与えるよう
な装置では、処理をより適切に行うことができる。
Furthermore, if the liquid discharging means is configured to discharge the processing liquid from a slit-shaped liquid discharging port extending in the substrate posture direction (claim 4), the processing liquid can be evenly applied to the substrate. For example, in a device such as a cleaning device in which the fluid pressure affects the quality of the process, the process can be performed more appropriately.

【図面の簡単な説明】[Brief description of the drawings]

【図1】本発明に係る基板処理装置である水洗装置を示
す斜視図である。
FIG. 1 is a perspective view showing a water washing apparatus which is a substrate processing apparatus according to the present invention.

【図2】搬送機構の構成を示す断面図である。FIG. 2 is a cross-sectional view illustrating a configuration of a transport mechanism.

【図3】搬送機構とノズルとの関係を示す平面図であ
る。
FIG. 3 is a plan view showing a relationship between a transport mechanism and a nozzle.

【図4】搬送機構の搬送面とノズルとの関係を示す側面
図である。
FIG. 4 is a side view illustrating a relationship between a transfer surface of a transfer mechanism and a nozzle.

【図5】基板に吹き付けた純水の流れを説明する模式図
である。
FIG. 5 is a schematic diagram illustrating the flow of pure water sprayed on a substrate.

【図6】(a),(b)は基板に純水を吹き付ける時間
の差を説明する模式図で、(a)は従来装置、(b)は
本願装置を示す図である。
6 (a) and 6 (b) are schematic diagrams for explaining a difference in time for spraying pure water on a substrate, FIG. 6 (a) is a diagram showing a conventional device, and FIG.

【図7】ノズルの変形例を示す平面図である。FIG. 7 is a plan view showing a modified example of the nozzle.

【図8】従来装置を説明する断面図である。FIG. 8 is a cross-sectional view illustrating a conventional device.

【図9】従来装置における基板状での純水の流れを説明
する模式図である。
FIG. 9 is a schematic diagram illustrating a flow of pure water in a substrate shape in a conventional apparatus.

【符号の説明】[Explanation of symbols]

10 水洗装置 12 処理槽 13 薬液処理装置 14 基板受入口 16 搬送機構 18 搬送ローラ 20 駆動機構 22 ノズル 22a 吐出口 24 液供給管 26 貯水タンク 28 バルブ W 基板 DESCRIPTION OF SYMBOLS 10 Rinse apparatus 12 Processing tank 13 Chemical liquid processing apparatus 14 Substrate receiving port 16 Transport mechanism 18 Transport roller 20 Drive mechanism 22 Nozzle 22a Discharge port 24 Liquid supply pipe 26 Water storage tank 28 Valve W Substrate

Claims (4)

【特許請求の範囲】[Claims] 【請求項1】 水平面に対して所定の角度をなす基板姿
勢方向に傾斜あるいは起立させた基板を、当該基板姿勢
のまま、前記水平面と平行で、かつ前記基板姿勢方向と
直交する搬送方向に搬送しつつ、該基板の表面と対向配
置された液吐出手段から基板表面に処理液を供給する基
板処理装置において、前記液吐出手段が、前記基板姿勢
方向における上方端部が下方端部よりも前記搬送方向に
おける上流側に位置するように、前記搬送方向に対して
角度をなすように配置されたことを特徴とする基板処理
装置。
1. A substrate tilted or raised in a substrate attitude direction at a predetermined angle with respect to a horizontal plane is transported in a transport direction parallel to the horizontal plane and orthogonal to the substrate attitude direction while maintaining the substrate attitude. In a substrate processing apparatus for supplying a processing liquid to a substrate surface from liquid discharging means disposed opposite to the surface of the substrate, the liquid discharging means may be configured such that an upper end in the substrate posture direction has a lower end than a lower end. A substrate processing apparatus, wherein the substrate processing apparatus is disposed at an angle to the transport direction so as to be located on an upstream side in the transport direction.
【請求項2】 前記液吐出手段が、前記搬送方向の上流
側に向かって処理液を吐出するように基板表面に対して
角度をなして設けられていることを特徴とする請求項1
記載の基板処理装置。
2. The apparatus according to claim 1, wherein the liquid discharge means is provided at an angle to a substrate surface so as to discharge the processing liquid toward an upstream side in the transport direction.
The substrate processing apparatus according to any one of the preceding claims.
【請求項3】 前記液吐出手段が、基板に対する処理液
の吐出領域を前記基板姿勢方向に分割する複数の単位液
吐出手段から構成されるとともに、前記基板姿勢方向に
おける下方側の単位液吐出手段の上方端部が上方側の単
位液吐出手段の下方端部よりも前記搬送方向の上流側に
位置するように配置されていることを特徴とする請求項
1又は2記載の基板処理装置。
3. The liquid discharging means comprises a plurality of unit liquid discharging means for dividing a processing liquid discharge area on a substrate in the substrate posture direction, and a lower unit liquid discharging means in the substrate posture direction. 3. The substrate processing apparatus according to claim 1, wherein an upper end of the substrate processing apparatus is located upstream of a lower end of the upper unit liquid discharge unit in the transport direction. 4.
【請求項4】 前記液吐出手段が、基板姿勢方向に延び
るスリット状の液吐出口から処理液を吐出するように構
成されていることを特徴とする請求項1乃至3のいずれ
かに記載の基板処理装置。
4. The apparatus according to claim 1, wherein said liquid discharging means is configured to discharge the processing liquid from a slit-shaped liquid discharging port extending in a substrate posture direction. Substrate processing equipment.
JP19860797A 1997-07-24 1997-07-24 Substrate processing equipment Expired - Fee Related JP3550277B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19860797A JP3550277B2 (en) 1997-07-24 1997-07-24 Substrate processing equipment

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19860797A JP3550277B2 (en) 1997-07-24 1997-07-24 Substrate processing equipment

Publications (2)

Publication Number Publication Date
JPH1133503A true JPH1133503A (en) 1999-02-09
JP3550277B2 JP3550277B2 (en) 2004-08-04

Family

ID=16394015

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19860797A Expired - Fee Related JP3550277B2 (en) 1997-07-24 1997-07-24 Substrate processing equipment

Country Status (1)

Country Link
JP (1) JP3550277B2 (en)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000306881A (en) * 1999-03-26 2000-11-02 Applied Materials Inc Substrate cleaning/drying system
JP2002170798A (en) * 2000-11-29 2002-06-14 Shin Etsu Handotai Co Ltd Method and apparatus for washing polishing plate and method for polishing wafer
JP2003068694A (en) * 2001-08-28 2003-03-07 Fujikoshi Mach Corp Wafer-cleaning apparatus and wafer-bonding apparatus
JP2007117994A (en) * 2005-09-30 2007-05-17 Hitachi High-Technologies Corp Apparatus and method of cleaning substrate, and method of manufacturing substrate
JP2009135508A (en) * 2008-12-22 2009-06-18 Shibaura Mechatronics Corp Apparatus for processing substrate
JP2010034583A (en) * 2003-07-18 2010-02-12 Shibaura Mechatronics Corp Treatment apparatus and treatment method of substrate
US7980255B2 (en) 2001-11-02 2011-07-19 Applied Materials, Inc. Single wafer dryer and drying methods
KR101055247B1 (en) * 2003-07-18 2011-08-08 시바우라 메카트로닉스 가부시키가이샤 Substrate processing apparatus and processing method
CN103042004A (en) * 2013-01-15 2013-04-17 东莞市盛威光电科技有限公司 Washing mechanism of touch screen etching demoulding production line

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000306881A (en) * 1999-03-26 2000-11-02 Applied Materials Inc Substrate cleaning/drying system
JP2002170798A (en) * 2000-11-29 2002-06-14 Shin Etsu Handotai Co Ltd Method and apparatus for washing polishing plate and method for polishing wafer
JP2003068694A (en) * 2001-08-28 2003-03-07 Fujikoshi Mach Corp Wafer-cleaning apparatus and wafer-bonding apparatus
US7980255B2 (en) 2001-11-02 2011-07-19 Applied Materials, Inc. Single wafer dryer and drying methods
JP2010034583A (en) * 2003-07-18 2010-02-12 Shibaura Mechatronics Corp Treatment apparatus and treatment method of substrate
KR101055247B1 (en) * 2003-07-18 2011-08-08 시바우라 메카트로닉스 가부시키가이샤 Substrate processing apparatus and processing method
JP2007117994A (en) * 2005-09-30 2007-05-17 Hitachi High-Technologies Corp Apparatus and method of cleaning substrate, and method of manufacturing substrate
JP2009135508A (en) * 2008-12-22 2009-06-18 Shibaura Mechatronics Corp Apparatus for processing substrate
CN103042004A (en) * 2013-01-15 2013-04-17 东莞市盛威光电科技有限公司 Washing mechanism of touch screen etching demoulding production line

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