JP2001108977A - Apparatus for manufacturing liquid crystal display device and method for the same - Google Patents

Apparatus for manufacturing liquid crystal display device and method for the same

Info

Publication number
JP2001108977A
JP2001108977A JP29066699A JP29066699A JP2001108977A JP 2001108977 A JP2001108977 A JP 2001108977A JP 29066699 A JP29066699 A JP 29066699A JP 29066699 A JP29066699 A JP 29066699A JP 2001108977 A JP2001108977 A JP 2001108977A
Authority
JP
Japan
Prior art keywords
substrate
cleaning
processing
liquid
inclination
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP29066699A
Other languages
Japanese (ja)
Inventor
Mikio Nishio
幹夫 西尾
Original Assignee
Matsushita Electric Ind Co Ltd
松下電器産業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Ind Co Ltd, 松下電器産業株式会社 filed Critical Matsushita Electric Ind Co Ltd
Priority to JP29066699A priority Critical patent/JP2001108977A/en
Publication of JP2001108977A publication Critical patent/JP2001108977A/en
Pending legal-status Critical Current

Links

Abstract

PROBLEM TO BE SOLVED: To prevent the easy tendency to the readhesion of contamination removed from substrate surfaces during cleaning and the infeasibility of obtaining a high foreign matter removal effect in the conventional batchwise or single substrate cleaning system. SOLUTION: The cleaning device for executing the cleaning, wet etching, resist peeling, etc., of the substrates by the single substrate system is so constituted that the planes of the substrates are installed with an upward inclination of 5 to 30 deg. with the horizontal in the progressing direction and that the substrates move while ascending with an inclination of 5 to 30 deg. with the horizontal.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【0001】[0001]
【発明の属する技術分野】本発明は、アクティブマトリ
クス型液晶表示装置に用いられる薄膜トランジスタ基板
などの製造工程での、枚葉式の洗浄方法並びにその装置
の構成に関する。
[0001] 1. Field of the Invention [0002] The present invention relates to a single-wafer type cleaning method and a structure of the apparatus in a process of manufacturing a thin film transistor substrate used for an active matrix type liquid crystal display device.
【0002】[0002]
【従来の技術】従来から、液晶表示装置{以下、LCD
(Liquid Crystal Display)と記す}の製造過程におい
て、基板の洗浄には、図3に示すバッチ式洗浄方式、ま
たは、図4に示す枚葉式洗浄方式が使われてきた。
2. Description of the Related Art Conventionally, liquid crystal display devices (hereinafter referred to as LCDs)
In the manufacturing process (1) described as (Liquid Crystal Display), a batch type cleaning method shown in FIG. 3 or a single wafer type cleaning method shown in FIG. 4 has been used for cleaning the substrate.
【0003】図3に示すバッチ式洗浄方式は、特開平5
−267264号公報に紹介されている方法で、高い振
動数を有する超音波(800〜1,200kHz)振動
子35が底面に設置された超音波洗浄槽34に洗浄すべ
き基板31を収納したカセット32を入れ支持台33の
上に乗せて行われていた。また、洗浄装置の洗浄槽は、
必要に応じて複数槽直列に設置され、洗浄槽は、それぞ
れ水,アルカリ,有機溶剤(フロン,IPA等)等の洗
浄目的に合わせた溶液で満たされている。また、特開平
5−267264号公報の方法では、図3(b)に示す
ように洗浄すべき基板31を振動子35に対し、基板3
1の素子面36を振動子35の方へ傾ける事により、振
動子35より放射された超音波が効率よく素子面36に
照射され、汚れが効率よく除去されることを特徴として
いる。
[0003] The batch cleaning method shown in FIG.
US Patent No. 2,267,264 discloses a cassette containing a substrate 31 to be cleaned in an ultrasonic cleaning tank 34 in which an ultrasonic (800 to 1,200 kHz) vibrator 35 having a high frequency is installed on the bottom surface. 32 was put on the support 33 and the operation was performed. Also, the cleaning tank of the cleaning device is
A plurality of tanks are installed in series as needed, and the cleaning tanks are filled with a solution such as water, an alkali, or an organic solvent (such as Freon or IPA), which is suitable for the purpose of cleaning. In the method disclosed in Japanese Patent Application Laid-Open No. 5-267264, the substrate 31 to be cleaned is moved with respect to the vibrator 35 as shown in FIG.
By tilting the first element surface 36 toward the vibrator 35, ultrasonic waves radiated from the vibrator 35 are efficiently radiated to the element surface 36, and dirt is efficiently removed.
【0004】また、図4に示す枚葉式洗浄方式は、特開
平8−236498号公報に紹介されている方法で、図
4(a)は装置全体の構成例、図4(b)はリンス槽お
よび乾燥槽の具体例の側面図である。図4(a)におい
て、薄膜トランジスタ基板等の基板41は、ローダ10
0からアンローダ104まで自動的に順次に搬送され
る。ローダ100より搬出された基板41は、処理槽1
01で、洗浄,ウェットエッチング,レジスト剥離等の
処理が行われ、次にリンス槽102に搬送され純水等の
リンスが行われる。そして乾燥槽103に搬送され、高
圧空気,高圧不活性ガス等を吹き付けるエアナイフによ
り乾燥され、アンローダ104に搬送される。図4
(b)において、基板41は、搬送ローラ45の上を図
中の左側から右側に搬送される。リンス槽102では、
基板41は、リンス液シャワー47によりリンス液を吹
き付けられ、図4(a)に示す処理槽101の処理液を
洗い流す。続いて、ガラス基板41は、乾燥槽103に
搬送されるとエアナイフ43により高圧空気、高圧不活
性ガス等を吹き付けられ、リンス液49を吹き飛ばし、
乾燥処理が行われる。そして、ガラス基板41は、アン
ローダ104に搬送される。
The single-wafer cleaning method shown in FIG. 4 is a method introduced in Japanese Patent Application Laid-Open No. Hei 8-236498. FIG. 4A shows an example of the entire apparatus, and FIG. It is a side view of a specific example of a tank and a drying tank. In FIG. 4A, a substrate 41 such as a thin film transistor substrate is mounted on the loader 10.
It is automatically and sequentially conveyed from 0 to the unloader 104. The substrate 41 unloaded from the loader 100 is placed in the processing tank 1
In step 01, processes such as cleaning, wet etching, and resist stripping are performed, and then the wafer is conveyed to a rinsing tank 102 and rinsed with pure water or the like. Then, it is conveyed to the drying tank 103, dried by an air knife that blows high-pressure air, high-pressure inert gas, or the like, and conveyed to the unloader 104. FIG.
6B, the substrate 41 is transported over the transport roller 45 from left to right in the figure. In the rinsing tank 102,
A rinsing liquid is sprayed on the substrate 41 by a rinsing liquid shower 47, and the processing liquid in the processing tank 101 shown in FIG. Subsequently, when the glass substrate 41 is conveyed to the drying tank 103, high-pressure air, high-pressure inert gas or the like is blown by the air knife 43 to blow off the rinsing liquid 49,
A drying process is performed. Then, the glass substrate 41 is transported to the unloader 104.
【0005】[0005]
【発明が解決しようとする課題】図3および図4に示す
従来の洗浄方法では、以下に記すような課題がある。
The conventional cleaning methods shown in FIGS. 3 and 4 have the following problems.
【0006】まず、図3に示すバッチ式洗浄方式では、
基板31を浸液する(さらには超音波振動を与える)こ
とで、基板表面の異物(パーティクルや汚染金属成分)
を除去する。さらには、基板を傾けることで振動子35
の効果を効率よくするというものである。しかし、洗浄
液中に出た異物は、液中を漂うために、再度基板31表
面に近づくことがあり、再度基板31表面に付着しやす
い。さらに、基板31を洗浄液中より引き上げる際に、
液表面に浮遊する異物は基板31の引き上げに伴って、
基板31表面の液の表面張力により基板31に吸い寄せ
られるため、パーティクル等の再付着が著しく、高い異
物除去効果を得られないという課題がある。
First, in the batch cleaning method shown in FIG.
By immersing the substrate 31 (and further applying ultrasonic vibration), foreign substances (particles and contaminant metal components) on the substrate surface
Is removed. Further, the vibrator 35 is tilted by tilting the substrate.
The effect of this is to make it more efficient. However, the foreign matter that has come out of the cleaning liquid may approach the surface of the substrate 31 again because it floats in the liquid, and easily adheres to the surface of the substrate 31 again. Further, when pulling up the substrate 31 from the cleaning liquid,
The foreign substances floating on the liquid surface are raised with the lifting of the substrate 31.
Since the liquid is attracted to the substrate 31 by the surface tension of the liquid on the surface of the substrate 31, re-attachment of particles and the like is remarkable, and there is a problem that a high foreign matter removing effect cannot be obtained.
【0007】また、図4に示す枚葉式洗浄方式でも、水
平に設置された基板41上では、液の流れが均一でない
ために、基板中央付近の洗浄液やリンス液49の置換の
効率が悪く、基板41表面に滞留する時間が長くなり、
一度基板41表面より除去された異物が再付着しやすい
という課題がある。これを防ぐために、液の滞留を極力
防止する必要があり、多量の洗浄液やリンス液を用いる
必要があるなどの欠点を有している。
In the single-wafer cleaning method shown in FIG. 4, the efficiency of the replacement of the cleaning liquid and the rinsing liquid 49 near the center of the substrate is low because the flow of the liquid is not uniform on the horizontally disposed substrate 41. , The residence time on the surface of the substrate 41 becomes longer,
There is a problem that the foreign matter once removed from the surface of the substrate 41 is likely to adhere again. In order to prevent this, it is necessary to prevent stagnation of the liquid as much as possible, and it has disadvantages such as the necessity of using a large amount of a cleaning liquid and a rinsing liquid.
【0008】本発明は、上記課題に鑑み、基板表面の異
物除去効果の高い洗浄方法並びにその装置を提供する。
The present invention has been made in view of the above problems, and provides a cleaning method and an apparatus therefor having a high effect of removing foreign substances on the surface of a substrate.
【0009】[0009]
【課題を解決するための手段】前記の目的を達成するた
め、請求項1の発明が講じた解決手段は、基板の平面は
進行方向に水平に対して5〜30°上向きの傾斜をもっ
て設置され、基板は水平に対して5〜30°の傾斜をも
って上昇しながら移動することを備えている構成とする
ものである。
Means for Solving the Problems To achieve the above object, a solution taken by the invention of claim 1 is that the plane of the substrate is installed with an inclination of 5 to 30 degrees upward with respect to the horizontal in the traveling direction. The substrate is configured to move while rising with an inclination of 5 to 30 degrees with respect to the horizontal.
【0010】請求項1の構成により、基板表面の処理液
は、基板の進行方向前方から基板の進行方向後方に向け
て基板表面の液の流速を保ちながら洗浄を行うことがで
きる。
According to the structure of the first aspect, the processing liquid on the substrate surface can be cleaned from the front in the traveling direction of the substrate to the rear in the traveling direction of the substrate while maintaining the flow rate of the liquid on the substrate surface.
【0011】請求項2の発明は、請求項1の構成に、複
数の処理槽を有し、各処理槽の基板入り口に処理槽内の
処理液が該基板の傾きによって該基板を伝って前段の処
理槽に流れ込むのを防止する機構と、該処理槽内の処理
液が次段の処理槽に流れ込むこと防止する機構を付加す
るものである。
According to a second aspect of the present invention, in the first aspect, a plurality of processing tanks are provided, and the processing liquid in the processing tanks travels along the substrate by the inclination of the substrate at the entrance of the substrate in each processing tank. And a mechanism for preventing the processing liquid in the processing tank from flowing into the next processing tank.
【0012】請求項2の構成により、複数段の洗浄処理
ができる。
According to the second aspect of the present invention, a plurality of cleaning steps can be performed.
【0013】請求項3の発明は、基板は進行方向に水平
に対して5〜30°上向きの傾斜をもって設置され、水
平に対して5〜30°の傾斜をもって上昇しながら移動
する工程と、該基板に処理液を散布する工程により、該
基板の進行方向前方から該基板の進行方向後方に向けて
該基板表面の液の流速を保ちながら洗浄を行う構成とす
るものである。
According to a third aspect of the present invention, there is provided a process wherein the substrate is installed with an upward inclination of 5 to 30 ° with respect to the horizontal in the traveling direction, and the substrate is moved while rising at an inclination of 5 to 30 ° with respect to the horizontal. In the step of spraying the processing liquid on the substrate, the cleaning is performed from the front in the traveling direction of the substrate to the rear in the traveling direction of the substrate while maintaining the flow rate of the liquid on the substrate surface.
【0014】請求項4の発明は、請求項3の構成に、複
数の処理を連続的に処理する工程を有し、各処理槽内の
基板入り口において、槽内の処理液が該基板の傾きによ
って該基板を伝って前段の処理槽に流れ込むのを防止す
る工程と、該処理槽内の処理液が次段の処理槽に流れ込
むこと防止する工程を備えている構成を付加するもので
ある。
According to a fourth aspect of the present invention, in the configuration of the third aspect, a step of continuously performing a plurality of processes is provided, and at the entrance of the substrate in each processing tank, the processing liquid in the tank is tilted by the substrate. And a step of preventing the processing solution in the processing tank from flowing into the next processing tank by preventing the processing solution from flowing into the preceding processing tank along the substrate.
【0015】[0015]
【発明の実施の形態】以下、本発明の実施形態に係る液
晶表示装置の製造方法およびその装置について図面を参
照しながら説明する。
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS A method for manufacturing a liquid crystal display device according to an embodiment of the present invention and the device will be described below with reference to the drawings.
【0016】(第1実施形態)図1と図2は本発明の第
1の実施形態に係る液晶表示装置の製造方法およびその
装置を説明するための製造装置の概略断面図である。
(First Embodiment) FIGS. 1 and 2 are schematic sectional views of a method for manufacturing a liquid crystal display device according to a first embodiment of the present invention and a manufacturing apparatus for explaining the device.
【0017】図1中の20は基板1の洗浄処理を行うす
る洗浄室、21は基板1に残る洗浄液を除去するリンス
室、22は基板1の最終洗浄ならびに乾燥を行う乾燥
室、2は基板1を搬送するためのローラー、3は基板1
の洗浄液7を吹き飛ばし基板1を乾燥させるためのエア
ーナイフ、4は基板1に洗浄液を供給するための洗浄シ
ャワー、5は基板1に残留する洗浄液を落とすための
純水などのリンス液を供給するためのリンスシャワー、
6は各処理室の処理液が室内から流れ出るのを防止する
ためのエアーカーテンである。
In FIG. 1, reference numeral 20 denotes a cleaning chamber for cleaning the substrate 1, reference numeral 21 denotes a rinsing chamber for removing the cleaning liquid remaining on the substrate 1, reference numeral 22 denotes a drying chamber for final cleaning and drying of the substrate 1, and reference numeral 2 denotes a substrate. Roller for conveying 1, 3 for substrate 1
An air knife 4 for blowing off the cleaning liquid 7 to dry the substrate 1, a cleaning shower 4 for supplying the cleaning liquid to the substrate 1, and an air knife 5 for dropping the cleaning liquid remaining on the substrate 1.
A rinse shower for supplying a rinse liquid such as pure water,
Reference numeral 6 denotes an air curtain for preventing the processing liquid in each processing chamber from flowing out of the room.
【0018】基板1はローラー2により、洗浄室20、
リンス室21、乾燥室22の順に搬送される。このとき
基板1は水平に対して角度θで上昇しながら搬送され
る。角度θは5〜30°である。
The substrate 1 is cleaned by a roller 2 in a cleaning chamber 20.
The rinsing chamber 21 and the drying chamber 22 are transported in this order. At this time, the substrate 1 is transported while rising at an angle θ with respect to the horizontal. Is 5 to 30 degrees.
【0019】まず、洗浄室20では、基板1が搬送され
エアーカーテン6手前ではエアーカーテン6により洗浄
シャワー4からの洗浄液8は遮断されているために、基
板1は洗浄液8に曝されない。さらに搬送が進み基板1
の一端がエアーカーテン6を通過すると通過した部分に
洗浄液8が供給され、洗浄処理が開始される。順次基板
の搬送が進むにつれ、基板全体が洗浄液8により洗浄さ
れる状態となる。次に、基板1が洗浄室20の出口付近
まで搬送されると、エアーナイフ3により、基板1上の
洗浄液8が吹き飛ばされ基板1が乾燥される。
First, in the cleaning room 20, the substrate 1 is conveyed and the cleaning liquid 8 from the cleaning shower 4 is shut off by the air curtain 6 before the air curtain 6, so that the substrate 1 is not exposed to the cleaning liquid 8. The substrate is further transported.
When one end passes through the air curtain 6, the cleaning liquid 8 is supplied to the portion that has passed, and the cleaning process is started. As the transfer of the substrate proceeds sequentially, the entire substrate is cleaned by the cleaning liquid 8. Next, when the substrate 1 is transported to the vicinity of the exit of the cleaning chamber 20, the cleaning liquid 8 on the substrate 1 is blown off by the air knife 3, and the substrate 1 is dried.
【0020】次に、リンス室21に搬送された基板1は
前段の洗浄室20の処理とほぼ同様に、最初はエアーカ
ーテン6によりリンス液9が供給されないためにリンス
液9に曝されないが、エアーカーテン6を通過するとリ
ンスシャワー5によりリンス液9が供給され、基板1表
面や裏面に残留する洗浄液8を洗い流す。次に、基板1
がリンス室21の出口付近まで搬送されると、エアーナ
イフ3により、基板1上のリンス液9が吹き飛ばされ基
板1が乾燥される。
Next, the substrate 1 transferred to the rinsing chamber 21 is not exposed to the rinsing liquid 9 because the rinsing liquid 9 is not initially supplied by the air curtain 6 in substantially the same manner as the processing in the preceding cleaning chamber 20. After passing through the air curtain 6, the rinsing liquid 9 is supplied by the rinsing shower 5, and the cleaning liquid 8 remaining on the front and back surfaces of the substrate 1 is washed away. Next, the substrate 1
Is transported to the vicinity of the exit of the rinsing chamber 21, the rinsing liquid 9 on the substrate 1 is blown off by the air knife 3, and the substrate 1 is dried.
【0021】次に、乾燥室22に搬送された基板1は前
段の洗浄室20やリンス室21の処理とほぼ同様に、最
初はエアーカーテン6により純水10が供給されないた
めに純水10に曝されないが、エアーカーテン6を通過
すると純水シャワー5により純水10が供給され、基板
1表面に残留するリンス液9を洗い流した後、基板1が
乾燥室22の出口付近まで搬送されると、2段に設置さ
れたエアーナイフ3により、基板1上の純水10が吹き
飛ばされ基板1が完全に乾燥される。
Next, the substrate 1 conveyed to the drying chamber 22 is first supplied to the pure water 10 because the air curtain 6 does not supply the pure water 10 at first, almost in the same manner as in the cleaning chamber 20 and the rinsing chamber 21 in the preceding stage. Although not exposed, pure water 10 is supplied by the pure water shower 5 after passing through the air curtain 6 to rinse off the rinsing liquid 9 remaining on the surface of the substrate 1, and then the substrate 1 is transported to near the outlet of the drying chamber 22. The pure water 10 on the substrate 1 is blown off by the air knives 3 installed in two stages, and the substrate 1 is completely dried.
【0022】上述した多段階の処理において、基板1が
角度θ(5〜30°)を持っているために、供給された
洗浄液8、リンス液9、純水10(以下、総称して処理
液と記す)は基板1の傾きによって下方(図中の右から
左)へと一方向に流れる。処理液が上方から下方へと一
方向に流れることにより、基板1表面の処理液は滞留す
ることなく効率よく置換され、均一で高い洗浄・リンス
効果が得られる。さらに、洗浄液が滞留せず上方ほど新
しい処理液が供給されるために、洗浄等の処理によって
基板表面より浮遊したパーティクル等の異物が再付着し
にくいので、高い異物除去効果が得られる。ここで、基
板表面の処理液が滞留せず円滑な流れを作るために、基
板1の傾き角度θは5°以上であることが必要である。
In the above-described multi-stage processing, since the substrate 1 has the angle θ (5 to 30 °), the supplied cleaning liquid 8, rinsing liquid 9, and pure water 10 (hereinafter referred to collectively as processing liquid). Flows in one direction downward (from right to left in the figure) due to the inclination of the substrate 1. When the processing liquid flows in one direction from the upper side to the lower side, the processing liquid on the surface of the substrate 1 is efficiently replaced without staying, and a uniform and high cleaning / rinsing effect can be obtained. Furthermore, since the cleaning liquid does not stay and the new processing liquid is supplied to the upper side, foreign substances such as particles floating from the substrate surface due to the processing such as cleaning are hardly reattached, so that a high foreign substance removing effect can be obtained. Here, the inclination angle θ of the substrate 1 needs to be 5 ° or more in order to create a smooth flow without the treatment liquid on the substrate surface remaining.
【0023】また、基板1の下方では、図2に示すよう
に、エアーカーテン6により圧縮空気の流れを作り、洗
浄液8(またはリンス液9、純水10)がエアーカーテ
ン6の下方へ流出することを防止している。ここで、基
板1の傾きが30°以上であると、処理液の流れが速す
ぎ、エアーカーテン6により流れを止めることが困難と
なるため、基板1の傾き角度θは30°以下であること
が必要である。
Further, under the substrate 1, as shown in FIG. 2, a flow of compressed air is generated by the air curtain 6, and the cleaning liquid 8 (or the rinsing liquid 9, pure water 10) flows out below the air curtain 6. Is preventing that. Here, if the inclination of the substrate 1 is 30 ° or more, the flow of the processing liquid is too fast, and it is difficult to stop the flow by the air curtain 6, so that the inclination angle θ of the substrate 1 is 30 ° or less. is necessary.
【0024】エアーカーテン6とエアーナイフ3により
各処理槽の処理液は処理槽内から流出することがなく、
処理液の使用量を低減できる効果を得られる上、エアー
カーテン6とエアーナイフ3の間でしか処理液に曝され
ないために、基板面内でエアーカーテン6とエアーナイ
フ3の距離と搬送速度に応じた等時間の処理が行え、均
一な処理が可能である。
By the air curtain 6 and the air knife 3, the processing liquid in each processing tank does not flow out of the processing tank.
In addition to the effect of reducing the amount of the processing liquid used, the processing liquid is exposed only between the air curtain 6 and the air knife 3, so that the distance between the air curtain 6 and the air knife 3 and the transport speed within the substrate surface are reduced. Processing can be performed for an equal amount of time, and uniform processing can be performed.
【0025】尚、上述の実施形態においては洗浄・リン
ス・乾燥の3段階の処理で説明したが、これは洗浄・乾
燥であってもよいし、洗浄はエッチングであっても全く
同様の効果が得られる。
In the above-described embodiment, three steps of cleaning, rinsing, and drying have been described. However, the cleaning, drying, and cleaning may be performed by etching. can get.
【0026】以上の実施形態により、基板表面の異物除
去効果の高い洗浄方法並びにその装置を提供することが
可能となる。
According to the above-described embodiment, it is possible to provide a cleaning method and an apparatus having a high effect of removing foreign substances from the substrate surface.
【0027】[0027]
【発明の効果】請求項1の発明に係る液晶表示装置の製
造装置によると、基板が角度θ(5〜30°)を持ち供
給された処理液は基板の傾きによって下方へと一方向に
流れる。処理液が上方から下方へと一方向に流れること
により、基板表面の処理液は滞留することなく効率よく
置換され、均一で高い洗浄・リンス効果が得られる。さ
らに、洗浄液が滞留せず上方ほど新しい処理液が供給さ
れるために、洗浄等の処理によって基板表面より浮遊し
たパーティクル等の異物が再付着しにくいので、高い異
物除去効果が得られるという機能を有することができ
る。
According to the apparatus for manufacturing a liquid crystal display device according to the first aspect of the present invention, the processing liquid supplied with the substrate having an angle θ (5 to 30 °) flows in one direction downward due to the inclination of the substrate. . When the processing liquid flows in one direction from above to below, the processing liquid on the substrate surface is efficiently replaced without staying, and a uniform and high cleaning / rinsing effect can be obtained. In addition, since the cleaning liquid does not stay and the new processing liquid is supplied to the upper side, foreign substances such as particles floating from the substrate surface due to the processing such as cleaning are hard to re-attach, so that a function of obtaining a high foreign substance removing effect can be obtained. Can have.
【0028】請求項2の発明に係る液晶表示装置の製造
装置によると、基板表面の処理液が基板の傾きにより基
板表面を伝って処理槽外へ流れ出ることを防止する機能
を有することができる。
According to the apparatus for manufacturing a liquid crystal display device according to the second aspect of the present invention, it is possible to have a function of preventing the processing liquid on the substrate surface from flowing out of the processing tank along the substrate surface due to the inclination of the substrate.
【0029】請求項3の発明に係る液晶表示装置の製造
方法によると、均一で高い洗浄・リンス効果と高い異物
除去効果の処理が可能になる。
According to the method of manufacturing a liquid crystal display device according to the third aspect of the present invention, a uniform and high cleaning / rinsing effect and a high foreign matter removing effect can be achieved.
【0030】請求項4の発明に係る液晶表示装置の製造
方法によると、基板面内で等時間の処理が行え、均一な
処理が可能であり、液の使用量の低減が可能になる。
According to the method of manufacturing a liquid crystal display device according to the fourth aspect of the present invention, the processing can be performed in the substrate surface for an equal time, the processing can be performed uniformly, and the amount of liquid used can be reduced.
【図面の簡単な説明】[Brief description of the drawings]
【図1】本発明の実施形態に係る液晶表示装置の製造装
置とその方法を説明するための装置の概略断面図
FIG. 1 is a schematic cross-sectional view of an apparatus for explaining a liquid crystal display device manufacturing apparatus and a method thereof according to an embodiment of the present invention.
【図2】本発明の実施形態に係る液晶表示装置の製造装
置の動作方法を説明するための装置の概略断面図
FIG. 2 is a schematic cross-sectional view of an apparatus for explaining an operation method of the apparatus for manufacturing a liquid crystal display device according to the embodiment of the present invention.
【図3】従来のバッチ式洗浄装置を説明するための装置
の概略断面図
FIG. 3 is a schematic sectional view of an apparatus for explaining a conventional batch-type cleaning apparatus.
【図4】従来の枚葉式洗浄装置を説明するための装置の
概略断面図
FIG. 4 is a schematic sectional view of an apparatus for explaining a conventional single-wafer cleaning apparatus.
【符号の説明】[Explanation of symbols]
1 基板 2 ローラー 3 エアーナイフ 4 洗浄シャワー 5 リンスシャワー 6 エアーカーテン 7 純水シャワー 8 洗浄液 9 リンス液 10 純水 20 洗浄室 21 リンス室 22 乾燥室 DESCRIPTION OF SYMBOLS 1 Substrate 2 Roller 3 Air knife 4 Cleaning shower 5 Rinse shower 6 Air curtain 7 Pure water shower 8 Cleaning liquid 9 Rinse liquid 10 Pure water 20 Cleaning room 21 Rinse room 22 Drying room

Claims (4)

    【特許請求の範囲】[Claims]
  1. 【請求項1】枚葉式で基板の洗浄,ウェットエッチン
    グ,レジスト剥離等を行う洗浄装置であって、基板の平
    面は進行方向に水平に対して5〜30°上向きの傾斜を
    もって設置され、基板は水平に対して5〜30°の傾斜
    をもって上昇しながら移動することを特徴とする液晶表
    示装置の製造装置。
    1. A cleaning apparatus for performing substrate cleaning, wet etching, resist stripping, and the like in a single-wafer system, wherein the plane of the substrate is installed with an inclination of 5 to 30 ° upward with respect to the horizontal in the traveling direction. Is a device for manufacturing a liquid crystal display device, which moves while rising with an inclination of 5 to 30 degrees with respect to the horizontal.
  2. 【請求項2】複数の処理槽を有し、各処理槽の基板入り
    口に処理槽内の処理液が基板の傾きによって前記基板を
    伝って前段の処理槽に流れ込むのを防止する機構と、前
    記処理槽内の処理液が次段の処理槽に流れ込むこと防止
    する機構を備えていることを特徴とする請求項1記載の
    液晶表示装置の製造装置。
    2. A mechanism having a plurality of processing tanks, wherein a mechanism for preventing a processing solution in the processing tank from flowing into the preceding processing tank along the substrate due to the inclination of the substrate at a substrate entrance of each processing tank; 2. The apparatus for manufacturing a liquid crystal display device according to claim 1, further comprising a mechanism for preventing a processing solution in the processing tank from flowing into the next processing tank.
  3. 【請求項3】枚葉式で基板を洗浄する方法であって、前
    記基板は進行方向に水平に対して5〜30°上向きの傾
    斜をもって設置され、水平に対して5〜30°の傾斜を
    もって上昇しながら移動する工程と、前記基板に処理液
    を散布する工程により、前記基板の進行方向前方から前
    記基板の進行方向後方に向けて前記基板表面の液の流速
    を保ちながら洗浄を行うことを特徴とする液晶表示装置
    の製造方法。
    3. A method for cleaning a substrate in a single-wafer system, wherein the substrate is installed with an inclination of 5 to 30 ° upward with respect to the horizontal in the traveling direction, and with an inclination of 5 to 30 ° with respect to the horizontal. The step of moving while ascending and the step of spraying the processing liquid on the substrate perform the cleaning while maintaining the flow rate of the liquid on the substrate surface from the front in the traveling direction of the substrate to the rear in the traveling direction of the substrate. A method for manufacturing a liquid crystal display device characterized by the above-mentioned.
  4. 【請求項4】複数の処理を連続的に処理する工程を有
    し、各処理槽内の基板入り口において、槽内の処理液が
    基板の傾きによって前記基板を伝って前段の処理槽に流
    れ込むのを防止する工程と、前記処理槽内の処理液が次
    段の処理槽に流れ込むこと防止する工程を備えているこ
    とを特徴とする請求項3に記載の液晶表示装置の製造方
    法。
    4. A process for continuously processing a plurality of processes, wherein at a substrate entrance in each processing tank, the processing liquid in the tank flows along the substrate by the inclination of the substrate and flows into the preceding processing tank. 4. The method for manufacturing a liquid crystal display device according to claim 3, comprising a step of preventing the processing solution from flowing in the processing tank and a step of preventing the processing liquid from flowing into the next processing tank.
JP29066699A 1999-10-13 1999-10-13 Apparatus for manufacturing liquid crystal display device and method for the same Pending JP2001108977A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP29066699A JP2001108977A (en) 1999-10-13 1999-10-13 Apparatus for manufacturing liquid crystal display device and method for the same

Publications (1)

Publication Number Publication Date
JP2001108977A true JP2001108977A (en) 2001-04-20

Family

ID=17758933

Family Applications (1)

Application Number Title Priority Date Filing Date
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Country Status (1)

Country Link
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Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004112106A1 (en) * 2003-06-13 2004-12-23 Sumitomo Precision Products Co., Ltd. Resist exfoliating apparatus
WO2005053006A1 (en) * 2003-11-25 2005-06-09 Sumitomo Precision Products Co., Ltd. Conveyance system substrate treating apparatus
JP2006276348A (en) * 2005-03-29 2006-10-12 Sharp Corp Substrate cleaning apparatus
JP2007316437A (en) * 2006-05-26 2007-12-06 Fujifilm Corp Member for display device and method for manufacturing the member, and display device
WO2008032401A1 (en) * 2006-09-15 2008-03-20 Mitsubishi Rayon Co., Ltd. Sheetlike item cleaning apparatus, method of cleaning sheetlike item therewith and process for producing platelike polymer
CN102172592A (en) * 2011-01-13 2011-09-07 深圳市宇顺电子股份有限公司 Method for automatically cleaning glass surface
EP2816600A1 (en) * 2010-09-13 2014-12-24 Jusung Engineering Co. Ltd. Apparatus and method for manufacturing thin film type solar cell
CN107614129A (en) * 2015-04-29 2018-01-19 康宁股份有限公司 The apparatus and method cleaned to sheet glass

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004112106A1 (en) * 2003-06-13 2004-12-23 Sumitomo Precision Products Co., Ltd. Resist exfoliating apparatus
WO2005053006A1 (en) * 2003-11-25 2005-06-09 Sumitomo Precision Products Co., Ltd. Conveyance system substrate treating apparatus
JP2006276348A (en) * 2005-03-29 2006-10-12 Sharp Corp Substrate cleaning apparatus
JP4621051B2 (en) * 2005-03-29 2011-01-26 シャープ株式会社 Substrate cleaning device
JP2007316437A (en) * 2006-05-26 2007-12-06 Fujifilm Corp Member for display device and method for manufacturing the member, and display device
WO2008032401A1 (en) * 2006-09-15 2008-03-20 Mitsubishi Rayon Co., Ltd. Sheetlike item cleaning apparatus, method of cleaning sheetlike item therewith and process for producing platelike polymer
EP2816600A1 (en) * 2010-09-13 2014-12-24 Jusung Engineering Co. Ltd. Apparatus and method for manufacturing thin film type solar cell
US9018034B2 (en) 2010-09-13 2015-04-28 Jusung Engineering Co., Ltd. Apparatus and method for manufacturing of thin film type solar cell
CN102172592A (en) * 2011-01-13 2011-09-07 深圳市宇顺电子股份有限公司 Method for automatically cleaning glass surface
CN102172592B (en) * 2011-01-13 2013-12-11 深圳市宇顺电子股份有限公司 Method for automatically cleaning glass surface
CN107614129A (en) * 2015-04-29 2018-01-19 康宁股份有限公司 The apparatus and method cleaned to sheet glass

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