JPH11283551A5 - - Google Patents

Info

Publication number
JPH11283551A5
JPH11283551A5 JP1998082147A JP8214798A JPH11283551A5 JP H11283551 A5 JPH11283551 A5 JP H11283551A5 JP 1998082147 A JP1998082147 A JP 1998082147A JP 8214798 A JP8214798 A JP 8214798A JP H11283551 A5 JPH11283551 A5 JP H11283551A5
Authority
JP
Japan
Prior art keywords
ion beam
internal cavity
substrate
beamline
electrostatic lens
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP1998082147A
Other languages
English (en)
Japanese (ja)
Other versions
JPH11283551A (ja
JP3717301B2 (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP08214798A priority Critical patent/JP3717301B2/ja
Priority claimed from JP08214798A external-priority patent/JP3717301B2/ja
Priority to US09/143,101 priority patent/US6191427B1/en
Publication of JPH11283551A publication Critical patent/JPH11283551A/ja
Publication of JPH11283551A5 publication Critical patent/JPH11283551A5/ja
Application granted granted Critical
Publication of JP3717301B2 publication Critical patent/JP3717301B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

JP08214798A 1998-03-27 1998-03-27 イオン注入装置及びイオン注入方法 Expired - Fee Related JP3717301B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP08214798A JP3717301B2 (ja) 1998-03-27 1998-03-27 イオン注入装置及びイオン注入方法
US09/143,101 US6191427B1 (en) 1998-03-27 1998-08-28 Ion implantation system and method suitable for low energy ion beam implantation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP08214798A JP3717301B2 (ja) 1998-03-27 1998-03-27 イオン注入装置及びイオン注入方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005212133A Division JP4589838B2 (ja) 2005-07-22 2005-07-22 イオン注入方法

Publications (3)

Publication Number Publication Date
JPH11283551A JPH11283551A (ja) 1999-10-15
JPH11283551A5 true JPH11283551A5 (enExample) 2004-12-02
JP3717301B2 JP3717301B2 (ja) 2005-11-16

Family

ID=13766335

Family Applications (1)

Application Number Title Priority Date Filing Date
JP08214798A Expired - Fee Related JP3717301B2 (ja) 1998-03-27 1998-03-27 イオン注入装置及びイオン注入方法

Country Status (2)

Country Link
US (1) US6191427B1 (enExample)
JP (1) JP3717301B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3560154B2 (ja) * 2001-03-15 2004-09-02 日新電機株式会社 イオンビーム照射装置の運転方法
US6903350B1 (en) 2004-06-10 2005-06-07 Axcelis Technologies, Inc. Ion beam scanning systems and methods for improved ion implantation uniformity
US20080173828A1 (en) * 2007-01-19 2008-07-24 Denso Corporation Ion implantation device and method for implanting ions
KR100918434B1 (ko) * 2007-10-16 2009-09-24 주식회사 쎄크 주사전자현미경
JP5500500B2 (ja) * 2010-03-11 2014-05-21 日新イオン機器株式会社 非対称なアインツェルレンズを有するビーム偏向器を備えたイオン注入装置
US9564297B2 (en) * 2013-05-16 2017-02-07 Applied Materials, Inc. Electron beam plasma source with remote radical source
US9721760B2 (en) 2013-05-16 2017-08-01 Applied Materials, Inc. Electron beam plasma source with reduced metal contamination

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0405855A3 (en) * 1989-06-30 1991-10-16 Hitachi, Ltd. Ion implanting apparatus and process for fabricating semiconductor integrated circuit device by using the same apparatus
US5466929A (en) * 1992-02-21 1995-11-14 Hitachi, Ltd. Apparatus and method for suppressing electrification of sample in charged beam irradiation apparatus
US5177366A (en) * 1992-03-06 1993-01-05 Eaton Corporation Ion beam implanter for providing cross plane focusing
JP3054302B2 (ja) * 1992-12-02 2000-06-19 アプライド マテリアルズ インコーポレイテッド イオン注入中の半導体ウェハにおける帯電を低減するプラズマ放出システム
JP2842344B2 (ja) * 1995-11-14 1999-01-06 日本電気株式会社 中性粒子ビーム処理装置
US5892236A (en) * 1997-07-09 1999-04-06 Bridgestone Corporation Part for ion implantation device

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