JP3717301B2 - イオン注入装置及びイオン注入方法 - Google Patents

イオン注入装置及びイオン注入方法 Download PDF

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Publication number
JP3717301B2
JP3717301B2 JP08214798A JP8214798A JP3717301B2 JP 3717301 B2 JP3717301 B2 JP 3717301B2 JP 08214798 A JP08214798 A JP 08214798A JP 8214798 A JP8214798 A JP 8214798A JP 3717301 B2 JP3717301 B2 JP 3717301B2
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Japan
Prior art keywords
ion beam
internal cavity
electrostatic lens
ion
incident
Prior art date
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Expired - Fee Related
Application number
JP08214798A
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English (en)
Japanese (ja)
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JPH11283551A (ja
JPH11283551A5 (enExample
Inventor
正隆 加勢
義幸 丹羽
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
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Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP08214798A priority Critical patent/JP3717301B2/ja
Priority to US09/143,101 priority patent/US6191427B1/en
Publication of JPH11283551A publication Critical patent/JPH11283551A/ja
Publication of JPH11283551A5 publication Critical patent/JPH11283551A5/ja
Application granted granted Critical
Publication of JP3717301B2 publication Critical patent/JP3717301B2/ja
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors
    • H01L21/26513—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors of electrically active species
    • G—PHYSICS
    • G21—NUCLEAR PHYSICS; NUCLEAR ENGINEERING
    • G21K—TECHNIQUES FOR HANDLING PARTICLES OR IONISING RADIATION NOT OTHERWISE PROVIDED FOR; IRRADIATION DEVICES; GAMMA RAY OR X-RAY MICROSCOPES
    • G21K1/00—Arrangements for handling particles or ionising radiation, e.g. focusing or moderating
    • G21K1/08—Deviation, concentration or focusing of the beam by electric or magnetic means
    • G21K1/087—Deviation, concentration or focusing of the beam by electric or magnetic means by electrical means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/2658—Bombardment with radiation with high-energy radiation producing ion implantation of a molecular ion, e.g. decaborane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H01J2237/0044—Neutralising arrangements of objects being observed or treated
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/265—Bombardment with radiation with high-energy radiation producing ion implantation
    • H01L21/26506—Bombardment with radiation with high-energy radiation producing ion implantation in group IV semiconductors

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Toxicology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Health & Medical Sciences (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • General Engineering & Computer Science (AREA)
  • Analytical Chemistry (AREA)
  • Chemical & Material Sciences (AREA)
  • Physical Vapour Deposition (AREA)
JP08214798A 1998-03-27 1998-03-27 イオン注入装置及びイオン注入方法 Expired - Fee Related JP3717301B2 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP08214798A JP3717301B2 (ja) 1998-03-27 1998-03-27 イオン注入装置及びイオン注入方法
US09/143,101 US6191427B1 (en) 1998-03-27 1998-08-28 Ion implantation system and method suitable for low energy ion beam implantation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP08214798A JP3717301B2 (ja) 1998-03-27 1998-03-27 イオン注入装置及びイオン注入方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2005212133A Division JP4589838B2 (ja) 2005-07-22 2005-07-22 イオン注入方法

Publications (3)

Publication Number Publication Date
JPH11283551A JPH11283551A (ja) 1999-10-15
JPH11283551A5 JPH11283551A5 (enExample) 2004-12-02
JP3717301B2 true JP3717301B2 (ja) 2005-11-16

Family

ID=13766335

Family Applications (1)

Application Number Title Priority Date Filing Date
JP08214798A Expired - Fee Related JP3717301B2 (ja) 1998-03-27 1998-03-27 イオン注入装置及びイオン注入方法

Country Status (2)

Country Link
US (1) US6191427B1 (enExample)
JP (1) JP3717301B2 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3560154B2 (ja) * 2001-03-15 2004-09-02 日新電機株式会社 イオンビーム照射装置の運転方法
US6903350B1 (en) 2004-06-10 2005-06-07 Axcelis Technologies, Inc. Ion beam scanning systems and methods for improved ion implantation uniformity
US20080173828A1 (en) * 2007-01-19 2008-07-24 Denso Corporation Ion implantation device and method for implanting ions
KR100918434B1 (ko) * 2007-10-16 2009-09-24 주식회사 쎄크 주사전자현미경
JP5500500B2 (ja) * 2010-03-11 2014-05-21 日新イオン機器株式会社 非対称なアインツェルレンズを有するビーム偏向器を備えたイオン注入装置
US9564297B2 (en) * 2013-05-16 2017-02-07 Applied Materials, Inc. Electron beam plasma source with remote radical source
US9721760B2 (en) 2013-05-16 2017-08-01 Applied Materials, Inc. Electron beam plasma source with reduced metal contamination

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0405855A3 (en) * 1989-06-30 1991-10-16 Hitachi, Ltd. Ion implanting apparatus and process for fabricating semiconductor integrated circuit device by using the same apparatus
US5466929A (en) * 1992-02-21 1995-11-14 Hitachi, Ltd. Apparatus and method for suppressing electrification of sample in charged beam irradiation apparatus
US5177366A (en) * 1992-03-06 1993-01-05 Eaton Corporation Ion beam implanter for providing cross plane focusing
JP3054302B2 (ja) * 1992-12-02 2000-06-19 アプライド マテリアルズ インコーポレイテッド イオン注入中の半導体ウェハにおける帯電を低減するプラズマ放出システム
JP2842344B2 (ja) * 1995-11-14 1999-01-06 日本電気株式会社 中性粒子ビーム処理装置
US5892236A (en) * 1997-07-09 1999-04-06 Bridgestone Corporation Part for ion implantation device

Also Published As

Publication number Publication date
JPH11283551A (ja) 1999-10-15
US6191427B1 (en) 2001-02-20

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