JPH11279778A - エッチング装置及び半導体装置の製造方法 - Google Patents
エッチング装置及び半導体装置の製造方法Info
- Publication number
- JPH11279778A JPH11279778A JP8464598A JP8464598A JPH11279778A JP H11279778 A JPH11279778 A JP H11279778A JP 8464598 A JP8464598 A JP 8464598A JP 8464598 A JP8464598 A JP 8464598A JP H11279778 A JPH11279778 A JP H11279778A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- etching
- reaction chamber
- shower head
- gas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000005530 etching Methods 0.000 title claims abstract description 57
- 238000000034 method Methods 0.000 title claims description 13
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000004065 semiconductor Substances 0.000 title claims description 6
- 239000000758 substrate Substances 0.000 claims abstract description 63
- 230000002093 peripheral effect Effects 0.000 claims abstract description 20
- 239000010409 thin film Substances 0.000 claims description 9
- 238000000059 patterning Methods 0.000 claims description 3
- 238000001312 dry etching Methods 0.000 abstract description 12
- 238000001020 plasma etching Methods 0.000 description 15
- 238000009826 distribution Methods 0.000 description 9
- 239000010408 film Substances 0.000 description 6
- 239000004973 liquid crystal related substance Substances 0.000 description 6
- 238000003860 storage Methods 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 239000011159 matrix material Substances 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910015844 BCl3 Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- XPDWGBQVDMORPB-UHFFFAOYSA-N Fluoroform Chemical compound FC(F)F XPDWGBQVDMORPB-UHFFFAOYSA-N 0.000 description 1
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- FAQYAMRNWDIXMY-UHFFFAOYSA-N trichloroborane Chemical compound ClB(Cl)Cl FAQYAMRNWDIXMY-UHFFFAOYSA-N 0.000 description 1
- 238000009827 uniform distribution Methods 0.000 description 1
Landscapes
- ing And Chemical Polishing (AREA)
- Drying Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8464598A JPH11279778A (ja) | 1998-03-30 | 1998-03-30 | エッチング装置及び半導体装置の製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8464598A JPH11279778A (ja) | 1998-03-30 | 1998-03-30 | エッチング装置及び半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11279778A true JPH11279778A (ja) | 1999-10-12 |
| JPH11279778A5 JPH11279778A5 (enExample) | 2004-08-05 |
Family
ID=13836444
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8464598A Withdrawn JPH11279778A (ja) | 1998-03-30 | 1998-03-30 | エッチング装置及び半導体装置の製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11279778A (enExample) |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6444039B1 (en) * | 2000-03-07 | 2002-09-03 | Simplus Systems Corporation | Three-dimensional showerhead apparatus |
| US6663715B1 (en) * | 1999-11-10 | 2003-12-16 | Nec Corporation | Plasma CVD apparatus for large area CVD film |
| KR100726136B1 (ko) | 2006-02-08 | 2007-06-12 | 주식회사 아바코 | 증착원 분사장치 |
| JP2012234904A (ja) * | 2011-04-28 | 2012-11-29 | Panasonic Corp | 静電チャックおよびこれを備えるドライエッチング装置 |
| JP2013021050A (ja) * | 2011-07-08 | 2013-01-31 | Tokyo Electron Ltd | 基板処理装置 |
| JP2014518452A (ja) * | 2011-06-11 | 2014-07-28 | 東京エレクトロン株式会社 | 気相成長システム用のプロセスガスディフューザ組立体 |
| KR20150010779A (ko) * | 2012-04-18 | 2015-01-28 | 도쿄엘렉트론가부시키가이샤 | 퇴적물 제거 방법 및 가스 처리 장치 |
| JP2017028220A (ja) * | 2015-07-28 | 2017-02-02 | 三菱マテリアル株式会社 | プラズマ処理装置用電極板 |
| KR20190056112A (ko) * | 2017-11-16 | 2019-05-24 | 삼성전자주식회사 | 샤워 헤드 및 이를 구비한 기판 처리 장치 |
| KR20200030591A (ko) * | 2017-08-11 | 2020-03-20 | 어플라이드 머티어리얼스, 인코포레이티드 | 열화학 기상 증착(cvd) 균일성을 개선하기 위한 장치 및 방법들 |
| CN113451168A (zh) * | 2020-04-14 | 2021-09-28 | 重庆康佳光电技术研究院有限公司 | 一种干蚀刻气体控制系统 |
-
1998
- 1998-03-30 JP JP8464598A patent/JPH11279778A/ja not_active Withdrawn
Cited By (16)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6663715B1 (en) * | 1999-11-10 | 2003-12-16 | Nec Corporation | Plasma CVD apparatus for large area CVD film |
| US6779483B2 (en) | 1999-11-10 | 2004-08-24 | Nec Corporation | Plasma CVD apparatus for large area CVD film |
| US6444039B1 (en) * | 2000-03-07 | 2002-09-03 | Simplus Systems Corporation | Three-dimensional showerhead apparatus |
| KR100726136B1 (ko) | 2006-02-08 | 2007-06-12 | 주식회사 아바코 | 증착원 분사장치 |
| JP2012234904A (ja) * | 2011-04-28 | 2012-11-29 | Panasonic Corp | 静電チャックおよびこれを備えるドライエッチング装置 |
| JP2014518452A (ja) * | 2011-06-11 | 2014-07-28 | 東京エレクトロン株式会社 | 気相成長システム用のプロセスガスディフューザ組立体 |
| JP2013021050A (ja) * | 2011-07-08 | 2013-01-31 | Tokyo Electron Ltd | 基板処理装置 |
| CN104505333A (zh) * | 2012-04-18 | 2015-04-08 | 东京毅力科创株式会社 | 沉积物去除方法及气体处理装置 |
| KR20150010779A (ko) * | 2012-04-18 | 2015-01-28 | 도쿄엘렉트론가부시키가이샤 | 퇴적물 제거 방법 및 가스 처리 장치 |
| JP2017028220A (ja) * | 2015-07-28 | 2017-02-02 | 三菱マテリアル株式会社 | プラズマ処理装置用電極板 |
| KR20200030591A (ko) * | 2017-08-11 | 2020-03-20 | 어플라이드 머티어리얼스, 인코포레이티드 | 열화학 기상 증착(cvd) 균일성을 개선하기 위한 장치 및 방법들 |
| CN111066133A (zh) * | 2017-08-11 | 2020-04-24 | 应用材料公司 | 用于改善热化学气相沉积(cvd)均匀性的设备和方法 |
| CN111066133B (zh) * | 2017-08-11 | 2023-08-22 | 应用材料公司 | 用于改善热化学气相沉积(cvd)均匀性的设备和方法 |
| US11939675B2 (en) | 2017-08-11 | 2024-03-26 | Applied Materials, Inc. | Apparatus and methods for improving thermal chemical vapor deposition (CVD) uniformity |
| KR20190056112A (ko) * | 2017-11-16 | 2019-05-24 | 삼성전자주식회사 | 샤워 헤드 및 이를 구비한 기판 처리 장치 |
| CN113451168A (zh) * | 2020-04-14 | 2021-09-28 | 重庆康佳光电技术研究院有限公司 | 一种干蚀刻气体控制系统 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20051129 |
|
| A521 | Written amendment |
Effective date: 20060113 Free format text: JAPANESE INTERMEDIATE CODE: A523 |
|
| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20060228 |
|
| A761 | Written withdrawal of application |
Effective date: 20060308 Free format text: JAPANESE INTERMEDIATE CODE: A761 |