JPH11260100A - Ｍｍｌ装置内のメモリ素子テスト方法 - Google Patents

Ｍｍｌ装置内のメモリ素子テスト方法

Info

Publication number
JPH11260100A
JPH11260100A JP10370580A JP37058098A JPH11260100A JP H11260100 A JPH11260100 A JP H11260100A JP 10370580 A JP10370580 A JP 10370580A JP 37058098 A JP37058098 A JP 37058098A JP H11260100 A JPH11260100 A JP H11260100A
Authority
JP
Japan
Prior art keywords
test
signal
dram
processor
memory device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10370580A
Other languages
English (en)
Japanese (ja)
Inventor
Biryo Kin
美良 金
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of JPH11260100A publication Critical patent/JPH11260100A/ja
Pending legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/04—Detection or location of defective memory elements, e.g. cell constructio details, timing of test signals
    • G11C29/08—Functional testing, e.g. testing during refresh, power-on self testing [POST] or distributed testing
    • G11C29/48—Arrangements in static stores specially adapted for testing by means external to the store, e.g. using direct memory access [DMA] or using auxiliary access paths

Landscapes

  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Tests Of Electronic Circuits (AREA)
  • Dram (AREA)
JP10370580A 1997-12-31 1998-12-25 Ｍｍｌ装置内のメモリ素子テスト方法 Pending JPH11260100A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1997P-81276 1997-12-31
KR1019970081276A KR100258898B1 (ko) 1997-12-31 1997-12-31 메모리와 로직의 통합 칩 및 그 테스트 방법

Publications (1)

Publication Number Publication Date
JPH11260100A true JPH11260100A (ja) 1999-09-24

Family

ID=19530537

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10370580A Pending JPH11260100A (ja) 1997-12-31 1998-12-25 Ｍｍｌ装置内のメモリ素子テスト方法

Country Status (3)

Country Link
JP (1) JPH11260100A (zh)
KR (1) KR100258898B1 (zh)
TW (1) TW544720B (zh)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20020049386A (ko) * 2000-12-19 2002-06-26 윤종용 테스트시 기입 데이터의 마스킹 동작이 가능한 반도체메모리 장치 및 데이터 마스킹 방법

Also Published As

Publication number Publication date
TW544720B (en) 2003-08-01
KR19990061022A (ko) 1999-07-26
KR100258898B1 (ko) 2000-06-15

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