JPH11233785A - Ｓｏｉｍｏｓｆｅｔおよびその製造方法 - Google Patents
Ｓｏｉｍｏｓｆｅｔおよびその製造方法Info
- Publication number
- JPH11233785A JPH11233785A JP3513798A JP3513798A JPH11233785A JP H11233785 A JPH11233785 A JP H11233785A JP 3513798 A JP3513798 A JP 3513798A JP 3513798 A JP3513798 A JP 3513798A JP H11233785 A JPH11233785 A JP H11233785A
- Authority
- JP
- Japan
- Prior art keywords
- region
- silicon
- drain
- oxide film
- source
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 51
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 273
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 273
- 239000010703 silicon Substances 0.000 claims abstract description 273
- 239000000969 carrier Substances 0.000 claims abstract description 32
- 230000007935 neutral effect Effects 0.000 claims description 52
- 230000015572 biosynthetic process Effects 0.000 claims description 39
- 239000012535 impurity Substances 0.000 claims description 35
- 150000002500 ions Chemical class 0.000 claims description 22
- 230000003647 oxidation Effects 0.000 claims description 18
- 238000007254 oxidation reaction Methods 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 17
- 230000001590 oxidative effect Effects 0.000 claims description 8
- 238000002513 implantation Methods 0.000 claims description 4
- 238000002955 isolation Methods 0.000 claims description 3
- 239000012212 insulator Substances 0.000 abstract 1
- 108091006146 Channels Proteins 0.000 description 150
- 229910052581 Si3N4 Inorganic materials 0.000 description 23
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 23
- 239000000758 substrate Substances 0.000 description 22
- 229910004298 SiO 2 Inorganic materials 0.000 description 17
- 230000000694 effects Effects 0.000 description 16
- 238000010586 diagram Methods 0.000 description 11
- 238000001039 wet etching Methods 0.000 description 8
- 230000003071 parasitic effect Effects 0.000 description 7
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 6
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 6
- 238000001020 plasma etching Methods 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 238000009825 accumulation Methods 0.000 description 5
- 238000005468 ion implantation Methods 0.000 description 5
- 238000000206 photolithography Methods 0.000 description 5
- 230000007423 decrease Effects 0.000 description 4
- 108010075750 P-Type Calcium Channels Proteins 0.000 description 3
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- BOTDANWDWHJENH-UHFFFAOYSA-N Tetraethyl orthosilicate Chemical compound CCO[Si](OCC)(OCC)OCC BOTDANWDWHJENH-UHFFFAOYSA-N 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004518 low pressure chemical vapour deposition Methods 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
Landscapes
- Thin Film Transistor (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3513798A JPH11233785A (ja) | 1998-02-17 | 1998-02-17 | Ｓｏｉｍｏｓｆｅｔおよびその製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP3513798A JPH11233785A (ja) | 1998-02-17 | 1998-02-17 | Ｓｏｉｍｏｓｆｅｔおよびその製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11233785A true JPH11233785A (ja) | 1999-08-27 |
| JPH11233785A5 JPH11233785A5 (enExample) | 2005-08-11 |
Family
ID=12433537
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP3513798A Pending JPH11233785A (ja) | 1998-02-17 | 1998-02-17 | Ｓｏｉｍｏｓｆｅｔおよびその製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11233785A (enExample) |
Cited By (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| FR2800908A1 (fr) * | 1999-10-25 | 2001-05-11 | Samsung Electronics Co Ltd | Circuit integre a semiconducteur du type silicium sur isolant permettant d'eliminer les effets de corps flottant et son procede de fabrication |
| US6281593B1 (en) * | 1999-12-06 | 2001-08-28 | International Business Machines Corporation | SOI MOSFET body contact and method of fabrication |
| JP2002217420A (ja) * | 2000-12-26 | 2002-08-02 | Samsung Electronics Co Ltd | Ｓｏｉトランジスタのフローティングボデー効果を除去するためのｓｏｉ半導体集積回路及びその製造方法 |
| US6542046B2 (en) | 2000-09-08 | 2003-04-01 | Murata Manufacturing Co. Ltd. | Directional coupler, antenna device, and radar system |
| JP2003174172A (ja) * | 2001-09-26 | 2003-06-20 | Seiko Epson Corp | 電界効果トランジスタおよびこれを用いた電気光学装置、半導体装置ならびに電子機器 |
| US6624475B2 (en) * | 2000-03-17 | 2003-09-23 | International Business Machines Corporation | SOI low capacitance body contact |
| JP2006303530A (ja) * | 1998-12-24 | 2006-11-02 | Renesas Technology Corp | 半導体装置及びその製造方法並びに半導体装置の設計方法 |
| JP2007287747A (ja) * | 2006-04-12 | 2007-11-01 | Renesas Technology Corp | 半導体装置 |
| JP2007287718A (ja) * | 2006-04-12 | 2007-11-01 | Renesas Technology Corp | 半導体装置 |
| JP2007324530A (ja) * | 2006-06-05 | 2007-12-13 | Oki Electric Ind Co Ltd | 半導体装置 |
| JP2012212918A (ja) * | 2012-06-21 | 2012-11-01 | Renesas Electronics Corp | 半導体装置 |
| US11715796B2 (en) | 2021-03-12 | 2023-08-01 | Kabushiki Kaisha Toshiba | High frequency transistor |
-
1998
- 1998-02-17 JP JP3513798A patent/JPH11233785A/ja active Pending
Cited By (13)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2006303530A (ja) * | 1998-12-24 | 2006-11-02 | Renesas Technology Corp | 半導体装置及びその製造方法並びに半導体装置の設計方法 |
| JP2001168337A (ja) * | 1999-10-25 | 2001-06-22 | Samsung Electronics Co Ltd | Ｓｏｉ半導体集積回路及びその製造方法 |
| FR2800908A1 (fr) * | 1999-10-25 | 2001-05-11 | Samsung Electronics Co Ltd | Circuit integre a semiconducteur du type silicium sur isolant permettant d'eliminer les effets de corps flottant et son procede de fabrication |
| US6281593B1 (en) * | 1999-12-06 | 2001-08-28 | International Business Machines Corporation | SOI MOSFET body contact and method of fabrication |
| US6624475B2 (en) * | 2000-03-17 | 2003-09-23 | International Business Machines Corporation | SOI low capacitance body contact |
| US6542046B2 (en) | 2000-09-08 | 2003-04-01 | Murata Manufacturing Co. Ltd. | Directional coupler, antenna device, and radar system |
| JP2002217420A (ja) * | 2000-12-26 | 2002-08-02 | Samsung Electronics Co Ltd | Ｓｏｉトランジスタのフローティングボデー効果を除去するためのｓｏｉ半導体集積回路及びその製造方法 |
| JP2003174172A (ja) * | 2001-09-26 | 2003-06-20 | Seiko Epson Corp | 電界効果トランジスタおよびこれを用いた電気光学装置、半導体装置ならびに電子機器 |
| JP2007287747A (ja) * | 2006-04-12 | 2007-11-01 | Renesas Technology Corp | 半導体装置 |
| JP2007287718A (ja) * | 2006-04-12 | 2007-11-01 | Renesas Technology Corp | 半導体装置 |
| JP2007324530A (ja) * | 2006-06-05 | 2007-12-13 | Oki Electric Ind Co Ltd | 半導体装置 |
| JP2012212918A (ja) * | 2012-06-21 | 2012-11-01 | Renesas Electronics Corp | 半導体装置 |
| US11715796B2 (en) | 2021-03-12 | 2023-08-01 | Kabushiki Kaisha Toshiba | High frequency transistor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20050125 |
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| A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20050125 |
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| A977 | Report on retrieval |
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| A131 | Notification of reasons for refusal |
Effective date: 20070717 Free format text: JAPANESE INTERMEDIATE CODE: A131 |
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| A521 | Written amendment |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20070918 |
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| A02 | Decision of refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A02 Effective date: 20071120 |