JPH11204703A - Semiconductor module - Google Patents

Abstract

PROBLEM TO BE SOLVED: To restrict an increase in temperature due to a transient loss of heat generation when starting conductivity, by a method wherein a conductor in which at least one terminal out of a plurality of external draw-out terminals is electrically connected to a power semiconductor device has heat capacity enough to absorb transiently generated heat in the power semiconductor device. SOLUTION: A power semiconductor device 4 is electrically connected to a power semiconductor device 5 via a first metallized wide conductor 12 having a width and a thickness, and further the power semiconductor devices 4, 5 are electrically connected to an emitter terminal 8 drawn out outside an insulative package via the first metallized wide conductor 12. The first metallized wide conductor 12 has a volume having heat capacity enough to absorb transiently generated heat in the power semiconductor devices 4, 5, and is a material of high heat conductivity. Thus, a loss of the transiently generated heat of the power semiconductor devices 4, 5 is absorbed by this first metallized wide conductor 12, and an increase in the highest temperature can be reduced. As a result, it is possible to also cope with an increase in the loss of generated heat associated with large capacity and high speed capability of the device.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor module for housing a power semiconductor device.

[0002]

2. Description of the Related Art In recent years, power semiconductor devices have tended to increase in capacity and speed, and heat loss has tended to increase further. But,
From the viewpoint of reliability and life, it is desirable that the power semiconductor element during operation be kept at a certain temperature or lower. For this reason, a semiconductor module in which a power semiconductor element is housed needs to have a structure capable of sufficiently suppressing an excessive rise in temperature of the element even if heat loss of the element increases.

FIG. 11A is a plan view showing the structure of a conventional semiconductor module. FIG.
FIG. 11C is a cross-sectional view of the device at a broken line AA ′ in FIG. 11A, and FIG. 11C is a cross-sectional view of the device at a broken line BB ′ in FIG.

As shown in FIGS. 11A to 11C, in a conventional semiconductor module, a first metal radiator plate 1 is provided.
Is used as a bottom plate, on which a first insulating thin plate 2 and a metal thin plate 3 are laminated on the first insulating thin plate 2. On the metal thin plate 3, for example, two power semiconductor elements 4 and 5
Is installed. These are surrounded by an insulating package 6. In addition, the power semiconductor elements 4 and 5 include an emitter terminal 8, a collector terminal 9, and a gate terminal 1 which are lead terminals drawn out of the package.
0 and a bonding wire 11. The inside of the package is filled with an insulating gel 7.

In the above-described conventional semiconductor module, when power is supplied to the power semiconductor elements 4 and 5, heat loss occurs in each element. Since the insulating gel 7 covering the upper portions of the power semiconductor elements 4 and 5 is a heat insulating material, most of the generated heat is conducted to the thin metal plate 3 provided below the power semiconductor elements 4 and 5. That is, the heat generated by the element when energized is first conducted to the metal thin plate 3, and further flows to the first metal radiator plate 1 through the first insulating thin plate 2. A cooler (not shown) is attached to the first metal radiator plate 1 and radiates heat there. With this heat radiating mechanism, the temperature rise of the power semiconductor elements 4 and 5 due to the heat loss during energization is suppressed.

[0006]

FIG. 12 is a graph showing a result of simulating a temperature rise caused by a transient heat loss of a 15 mm square rectangular power semiconductor element 4 in a conventional semiconductor module. In the graph,
One solid line indicates heat loss (unit W), and the other solid line indicates temperature rise (unit K) of the power semiconductor element 4. The horizontal axis is the elapsed time (unit: sec) from the start of energization.

As can be seen from the graph, in the conventional semiconductor module, the temperature rise of the power semiconductor element 4 reaches about 35 ° C. about 0.5 sec after the start of energization. As described above, in the conventional semiconductor module, since the temperature rise of the element due to the transient heat loss at the time of energization cannot be sufficiently suppressed, the bonding wire 11 connected to the element may be disconnected due to thermal stress. Defects occur, shortening of the life of power semiconductor elements due to thermal load,
There have been problems such as a decrease in the reliability of the electrical characteristics.

In addition, in the structure of such a conventional semiconductor module, there is not enough heat capacity to absorb the transient heat loss of the power semiconductor element, and the cooling efficiency is low. It cannot cope with an increase in heat loss due to the increase in speed and speed.

SUMMARY OF THE INVENTION An object of the present invention is to provide a semiconductor module having a high cooling efficiency capable of coping with an increase in heat loss of a power semiconductor element, that is, a large capacity and a high speed.

[0010]

A first feature of the semiconductor module of the present invention is that one or more power semiconductor elements and a plurality of external lead terminals electrically connected to the power semiconductor elements are provided. In the semiconductor module having at least one of the plurality of external lead-out terminals, the terminal is electrically connected to the power semiconductor element by a conductor having a fixed width and a thickness, and the conductor is connected to the transient state of the power semiconductor element. It has a sufficient heat capacity to absorb the excessive heat generation.

According to the first aspect of the present invention, since the power semiconductor element and the external lead-out electrode are connected by a conductor having a constant width and thickness, the presence of the conductor causes
A substantial heat capacity of the power semiconductor device is increased. In addition,
Here, the constant width and thickness of the conductor need not be uniform. Further, since a material and a volume having a sufficient heat capacity capable of absorbing transient heat generated at the start of energization are provided, a change in temperature rise of the element can be suppressed.

A second feature of the semiconductor module according to the present invention is that a bottom plate made of a metal radiator plate and one or more power semiconductor elements mounted on the bottom plate via an insulating plate and a metal plate are provided. A semiconductor module having a plurality of external lead-out terminals electrically connected to the power semiconductor element, wherein the power is supplied via an insulating plate and a metal plate above the power semiconductor element and the external lead-out terminal. And another metal heat radiating plate which is in contact with the semiconductor element for use.

According to the second feature of the present invention, the metal heat radiating plate is provided not only on the bottom plate but also on the upper part of the power semiconductor element, and the power semiconductor element is cooled from both upper and lower surfaces. It is possible to more efficiently suppress a change in temperature rise due to a transient heat loss at the start of energization.

A frame-like groove may be provided on the outer surface of one or both of the upper and lower two metal heat radiating plates around the power semiconductor element. The thermal stress generated by the heat generated when the power semiconductor element is energized can be reduced by the spring effect of the groove.

[0015] One or both of the upper and lower two metal heat radiating plates may be a cooler. More efficient cooling can be performed.

[0016]

Embodiments of the present invention will be described below with reference to the drawings.

FIG. 1A is a plan view of a semiconductor module according to a first embodiment of the present invention. FIG. 1B is a sectional view taken along line A- in FIG.
FIG. 1C is a cross-sectional view of the device taken along a line BB ′ in FIG. 1A.

The basic structure of the semiconductor module according to the first embodiment is almost the same as the conventional semiconductor module shown in FIG. That is, the first metal radiator plate 1 is used as a bottom plate, a first insulating thin plate 2 is further formed thereon, and a metal thin plate 3 is further stacked on the first insulating thin plate 2. Metal sheet 3
For example, two power semiconductor elements 4 and 5 are mounted thereon. In addition, these have an insulating package 6 around them.
And an insulating gel 7 inside the package.
Is filled.

The semiconductor module according to the first embodiment, which is different from the conventional semiconductor module, is characterized in that one power semiconductor element 4 and the other power semiconductor element 5
The first metal wide conductor 12 having a width and a thickness is electrically connected to each other, and further the power semiconductor elements 4 and 5 are drawn out of the insulating package by the first metal wide conductor 12. And that it is electrically connected.

The first metal wide conductor 12 is made of a material having a heat capacity sufficient to absorb the transient heat generation of the power semiconductor elements 4 and 5 and having high thermal conductivity. Preferably, for example, copper (Cu) or aluminum (Al) is selected as this material. The specific shape of the first metal wide conductor 12 may be determined according to the internal structure of the package.

Since the power semiconductor elements 4 and 5 are filled with the insulating gel 7 which is a heat insulating material, part of the heat generated by heat loss of these elements at the time of energization is widened by the first metal. It conducts heat to the conductor 12, but mostly to the lower metal sheet 3. The heat flowing through the metal thin plate 3 further flows through the first insulating thin plate 2 to the first metal radiator plate 1 to which a cooler (not shown) is attached, where the heat is radiated.

FIG. 2 shows a semiconductor module according to the first embodiment, in which a rectangular power semiconductor element 4 of 15 mm square is used, and which has a heat capacity approximately eight times that of the power semiconductor element 4 and is made of a first metal. 9 is a graph showing a result of simulating a temperature rise due to a transient heat loss when a wide conductor 12 is used. In the graph, one solid line indicates heat loss (unit: W), and the other solid line indicates temperature rise (unit: K) of the power semiconductor element 4. The horizontal axis is the elapsed time (unit: sec) from the start of energization.

As can be seen from the graph, the first metal wide conductor 12 has a heat capacity sufficient to absorb the transient heat generation of the power semiconductor element 4, so that the maximum temperature rise is the same as that shown in FIG. Is significantly reduced as compared with the maximum temperature rise of the semiconductor module.

Further, since the emitter terminal 8 and the power semiconductor elements 4 and 5 are electrically connected by the first metal wide conductor 12, the number of connection points by the bonding wires 11 is reduced, and the wire breaks due to thermal stress. The likelihood is reduced.

As described above, by replacing the electric connection between the power semiconductor element and the emitter terminal, which has been conventionally performed by the bonding wire, with a wider conductor having a larger capacity, the transient heat loss of the power semiconductor element is reduced. Can be absorbed by this conductor, and the maximum temperature rise can be reduced. Therefore, it is possible to cope with an increase in heat loss due to an increase in the capacity and speed of the element. In addition, since the occurrence of cutting of the bonding wire due to thermal stress is prevented, the reliability of the element is improved, and the life can be prevented from being shortened. Further, since the maximum temperature rise value of the power semiconductor element can be reduced, the size of the cooler attached to the semiconductor module can be reduced, and the apparatus cost can be reduced.

(Second Embodiment) A second embodiment of the present invention will be described.

FIG. 3A is a plan view of a semiconductor module according to a second embodiment of the present invention. FIG. 3 (b)
3A is a cross-sectional view of the device taken along the line AA ′ in FIG. 3A, and FIG. 3C is a cross-sectional view of the device taken along the line BB ′ in FIG.

Similar to the configuration of the semiconductor module according to the first embodiment, the power semiconductor elements 4 and 5 are connected by the first metal wide conductor 12 and further connected to the emitter terminal 8. In the first embodiment, the power semiconductor elements 4 and 5 and the collector terminal 9 are electrically connected via the thin metal plate 3 by a second metal wide conductor 13 having a width and a thickness. The material of the second metal wide conductor 13 is copper (Cu) or aluminum (A), like the first metal wide conductor 12.
l) is selected. The other device configuration is the same as the conventional one. The specific shape of the second metal wide conductor 13 may be determined according to the structure inside the package.

Here, the number of connection points by the bonding wires 11 is reduced as compared with the first embodiment, and the possibility of cutting by thermal stress is further reduced.

Therefore, in addition to the same effects as those of the semiconductor module according to the above-described first embodiment, the reliability of the power semiconductor element can be further improved and the life can be prevented from being shortened.

(Third Embodiment) Next, a third embodiment of the present invention will be described.
An embodiment will be described.

FIG. 4A is a plan view of a semiconductor module according to a third embodiment of the present invention. FIG. 4 (b)
4A is a cross-sectional view of the device taken along the line AA ′ in FIG. 4A, and FIG. 4C is a cross-sectional view of the device taken along the line BB ′ in FIG.

Here, in addition to the configuration of the semiconductor module according to the second embodiment, the power semiconductor elements 4 and 5 are electrically connected to the gate terminal 10 by using a third metal conductor 14 having a width and a thickness. Connected to Third metal conductor 1
4 are made of first and second metal wide conductors 12, 1;
Similarly to 3, copper (Cu) or aluminum (Al) is selected. Since the connection points by the bonding wires are substantially eliminated, there is no possibility of cutting due to thermal stress.

As the third metal conductor 14, a conductor having a diameter sufficiently larger than at least a conventionally used bonding wire and having a high heat capacity is used.

Therefore, in addition to the effects similar to those of the semiconductor modules according to the first and second embodiments, the reliability of the power semiconductor element can be further improved and the life can be prevented from being shortened.

(Fourth Embodiment) A fourth embodiment of the present invention will be described.

FIG. 5A is a plan view of a semiconductor module according to a fourth embodiment of the present invention. FIG. 5 (b)
5A is a cross-sectional view of the device taken along the line AA ′ in FIG. 5A, and FIG. 5C is a cross-sectional view of the device taken along the line BB ′ in FIG. 5A.

The main feature of the semiconductor module according to the fourth embodiment is that a metal heat radiating plate, which was conventionally provided only at the bottom of the module, is also provided at the top of the module.
Along with this, three external lead-out terminals comprising an emitter terminal 8, a collector terminal 9 and a gate terminal 10 are drawn out in parallel to the upper and lower two heat sinks 1, 16.

As shown in FIGS. 5A to 5C, the basic configuration is common to the above-described first to third embodiments. That is, the first metal radiator plate 1 is used as a bottom plate, a first insulating thin plate 2 is further formed thereon, and a metal thin plate 3 is further stacked on the first insulating thin plate 2. Two power semiconductor elements 4 and 5 are mounted on the metal thin plate 3. These semiconductor elements 4, 5 and the emitter terminal 8 and the collector terminal 9
Are electrically connected by a second metal wide conductor 13.

On the upper part of the second metal wide conductor 13, a second insulating thin plate 15 and a second metal radiator plate 16 are laminated in this order. The periphery is surrounded by the insulating package 6, and the second metal radiator plate 16 forms the upper lid of the insulating package 6 as it is. The inside of the insulating package 6 is filled with an insulating gel 7. The emitter terminal 8, the gate terminal 10, and the collector terminal 9, which are lead lines to the outside of the module, are all drawn out from the side surface of the package in parallel to the first metal radiator plate 1 and the second metal radiator plate 16. .

In the semiconductor module constructed as shown in FIGS. 5 (a) to 5 (c), a heat loss occurs when the power semiconductor elements 4 and 5 are energized. About half of the heat generated in 5 is conducted to the metal thin plate 3 joined to the lower part of the power semiconductor elements 4 and 5, and the remaining heat loss is conducted to the second metal wide conductor 13 joined to the upper part.

The heat conducted to the metal thin plate 3 is conducted to the first metal radiator plate 1 via the first insulating thin plate 2. A cooler is attached to the first metal radiator plate 1 to radiate the conducted heat. Similarly, the heat conducted to the second metal wide conductor 13 is conducted to the second metal radiator plate 16 via the second insulating thin plate 15. A cooler is also attached to the second metal radiator plate 16 to radiate heat conducted there.

As described above, in the conventional semiconductor module, the metal radiator plate is provided only on the bottom of the module. On the other hand, in the semiconductor module according to the fourth embodiment, not only the bottom but also the upper part is provided. Since the power semiconductor elements 4 and 5 are cooled from both upper and lower surfaces, the cooling efficiency is high. Further, since the semiconductor module has a sufficient heat capacity to absorb the transient heat loss of the power semiconductor elements 4 and 5, FIG.
The maximum temperature rise of the element at the start of energization is reduced more than the simulation value in the first embodiment shown in FIG.

Further, since the emitter terminal 8 and the collector terminal 9 and the internal power semiconductor elements 4 and 5 are electrically connected by the second metal wide conductor 13, the number of connection points by the bonding wire 11 is small. There is little possibility of cutting due to thermal stress.

(Fifth Embodiment) A fifth embodiment of the present invention will be described.

FIG. 6A is a plan view of a semiconductor module according to a fifth embodiment of the present invention. FIG. 6 (b)
6A is a cross-sectional view of the device taken along the line AA ′ in FIG. 6A, and FIG. 6C is a cross-sectional view of the device taken along the line BB ′ in FIG.

The basic structure of the semiconductor module according to the fifth embodiment is the same as that of the semiconductor module according to the fourth embodiment. The features added to the fourth embodiment are, as shown in FIG. 6B, a first metal radiator plate 1 provided at the bottom of the module and a second metal radiator plate 16 provided at the top of the module. That is, a groove 17 is provided in each of them. This groove 17 is, for example, as shown in FIG.
As shown in (a), the first insulating thin plate 2 and the second insulating thin plate 15 are provided in a frame shape so as to surround the outer peripheral portions thereof.

When the power semiconductor elements 4 and 5 generate heat and the temperature of each member in the semiconductor module rises, a first metal radiator plate 1 serving as a bottom plate of the semiconductor module and a second metal radiator plate serving as a ceiling plate are provided. 16 is subjected to outward thermal stress.
At this time, the first metal heat sink 1 and the second metal heat sink 1
When the groove 17 is provided in the groove 6, a spring effect is generated in the groove 17 due to the small thickness of the heat radiating plate at this portion, and the thermal stress is absorbed here. As a result, destruction of the semiconductor module due to thermal expansion can be prevented.

Therefore, the reliability of the power semiconductor device can be further improved, and the life can be prevented from being shortened. Groove 1
The structure other than 7 is the same as that of the semiconductor module according to the fourth embodiment, so that the semiconductor module according to the fifth embodiment can achieve the same operation and effect.

(Sixth Embodiment) A sixth embodiment of the present invention will be described.

FIG. 7A is a plan view of a semiconductor module according to a sixth embodiment of the present invention. FIG. 7 (b)
7A is a device cross-sectional view taken along a line AA ′ in FIG. 7A, and FIG. 7C is a device cross-sectional view taken along a line BB ′ in FIG. 7A.

The basic structure of the semiconductor module according to the sixth embodiment is the same as the structure of the semiconductor module according to the fifth embodiment. A newly added feature is that the bonding wire 1 according to the fifth embodiment is different from that of the fifth embodiment.
1 is that the gate terminal 10 and the power semiconductor element 4 connected by 1 are connected by the third metal conductor 14.

Therefore, since there is no connection point by the bonding wire, there is no possibility of disconnection due to thermal stress, and the reliability of the power semiconductor device is further improved, and the life can be prevented from being shortened.

(Seventh Embodiment) A seventh embodiment of the present invention will be described.

FIG. 8A is a plan view of a semiconductor module according to a seventh embodiment of the present invention. FIG. 8B
FIG. 8A is a cross-sectional view of the device taken along the line AA ′ in FIG. 8A, and FIG. 8C is a cross-sectional view of the device taken along the line BB ′ in FIG. FIGS. 9A to 9C show another example of the seventh embodiment.
It is a figure of the aspect similar to FIG.8 (c).

The basic structure of the semiconductor module according to the seventh embodiment is common to the structure of the semiconductor module according to the above-described sixth embodiment. The difference from the above-described sixth embodiment is that one or both of the first metal radiator plate 1 and the second metal radiator plate 16 or both radiator plates are connected to a cooler 18 such as an air-cooled heat sink or a heat pipe. It is to be. For example, in the semiconductor module shown in FIGS. 8A to 8C, the second metal radiator plate 16 itself is provided with radiating fins to form a cooler 18, and FIGS. 9A to 9C.
In the semiconductor module shown in FIG. 9C, both the first metal radiator plate and the second metal radiator plate 16 are provided with heat radiating fins to form a cooler 18.

Since there is nothing intervening between the heat sink and the cooler, high cooling efficiency can be obtained.

(Eighth Embodiment) An eighth embodiment of the present invention will be described.

FIG. 10A is a plan view of a semiconductor module according to an eighth embodiment of the present invention. FIG.
10B is a cross-sectional view of the apparatus taken along a line AA ′ in FIG. 10A, and FIG. 10C is a sectional view taken along a line B in FIG.
It is an apparatus sectional view in -B '.

In the semiconductor module according to the eighth embodiment, the first metal radiating plate 1 is used as a bottom plate, the first insulating thin plate 2 is provided thereon, and the metal thin plate 3 is provided on the first insulating thin plate 2.
Are laminated. Two power semiconductor elements 4 and 5 are mounted on the metal thin plate 3, and are surrounded by an insulating package 6. The package is filled with an insulating gel.

The characteristic feature here is that the first metal wide conductor 12 and the third metal conductor 14 joined to one power semiconductor element 4 and the second metal wide conductor 12 joined to the other power semiconductor element 5. The first metal wide conductor 12 and the second metal wide conductor 13 joined to the metal thin plate 3 respectively penetrate through the ceiling plate of the insulating package 6 and are drawn out to the upper outside.

Each conductor drawn out is used as it is as an emitter terminal, a collector terminal and a gate terminal. Specifically, the first metal wide conductor 12 is an emitter terminal, the second metal wide conductor 13 is a collector terminal, and the third metal wide conductor 13 is a third terminal.
A metal conductor serves as a gate terminal.

In this case, the two first metal wide conductors 12 drawn from the power semiconductor element 4 and the power semiconductor element 5, respectively, are made of metal having cooling fins outside the insulating package 6. It is electrically connected by a cooler 18.

In the semiconductor module configured as shown in FIG. 10, about half of the heat loss generated when the power semiconductor elements 4 and 5 are energized is connected to the lower part of the power semiconductor elements 4 and 5. The first metal wide conductor 12 in which the remaining heat loss is bonded to each element to the thin metal plate 3
Conducts heat to

The heat conducted to the metal thin plate 3 passes through the first insulating thin plate 2 and conducts to the first metal radiator plate 1. First
Since a cooler (not shown) is attached to the metal heat radiating plate 1, heat is radiated there. Similarly, the heat conducted to the first metal wide conductor 12 is radiated outside the insulating package 6 by a cooler connected to the first metal wide conductor 12.

As described above, in the semiconductor module according to the eighth embodiment, the power semiconductor elements 4 and 5
Is cooled from both the upper and lower sides, so that the cooling efficiency is high. Further, since it has a sufficient heat capacity to absorb transient heat loss of the power semiconductor elements 4 and 5,
Temperature rise due to transient heat loss is suppressed more than in the semiconductor module according to the first embodiment.

Further, since there is no connection point by a bonding wire, disconnection due to thermal stress does not occur. Also,
Since the power semiconductor elements are electrically connected to the outside of the insulating package 6, the power semiconductor elements housed therein can be freely combined and connected according to the application.

Although the present invention has been described with reference to the embodiments, the present invention is not limited to these embodiments.

[0069]

As described above, one or a plurality of power semiconductor elements mounted directly or indirectly on the metal radiator plate, and the power semiconductor element, In a semiconductor module having a plurality of external lead-out terminals that are electrically connected, part or all of the plurality of external lead-out terminals are connected to the power semiconductor element by a conductor having a certain width or more and a thickness. As compared with the conventional case where the connection is made by a bonding wire, it is possible to suppress a temperature rise due to a transient heat loss at the start of energization.

By providing a metal heat radiating plate not only on the bottom plate but also on the upper part of the power semiconductor element, the conventional single-sided cooling can be cooled on both sides, so that the power semiconductor element can be cooled more efficiently. be able to. Therefore, it is possible to more efficiently suppress a temperature rise of the power semiconductor element due to a transient heat loss at the start of energization.

Further, a radiation fin may be provided on one or both of the two metal radiating plates provided above and below.
More efficient cooling can be performed.

As described above, by providing a semiconductor module that efficiently suppresses a temperature rise due to a transient heat loss at the start of energization, the reliability of the element is improved,
The life can be prevented from being shortened. Further, since the maximum temperature rise of the power semiconductor element can be reduced, a cooler for cooling the power semiconductor element can be reduced in size and cost can be reduced. Further, even in the case where the power semiconductor element has a larger capacity and a higher speed in the future and the heat loss is further increased, the reliability of the module operation can be sufficiently ensured.

[Brief description of the drawings]

FIG. 1 is a plan view and a cross-sectional view of a semiconductor module according to a first embodiment of the present invention.

FIG. 2 is a graph showing a simulation result of a temperature rise when a transient heat loss of the power semiconductor element in the semiconductor module according to the first embodiment of the present invention occurs.

FIG. 3 is a plan view and a cross-sectional view of a semiconductor module according to a second embodiment of the present invention.

FIG. 4 is a plan view and a sectional view of a semiconductor module according to a third embodiment of the present invention.

FIG. 5 is a plan view and a cross-sectional view of a semiconductor module according to a fourth embodiment of the present invention.

FIG. 6 is a plan view and a cross-sectional view of a semiconductor module according to a fifth embodiment of the present invention.

FIG. 7 is a plan view and a sectional view of a semiconductor module according to a sixth embodiment of the present invention.

FIG. 8 is a plan view and a cross-sectional view of a semiconductor module according to a seventh embodiment of the present invention.

FIG. 9 is a plan view and a sectional view of another semiconductor module according to a seventh embodiment of the present invention.

FIG. 10 is a plan view and a sectional view of a semiconductor module according to an eighth embodiment of the present invention.

FIG. 11 is a plan view and a cross-sectional view of a semiconductor module according to a conventional semiconductor module.

FIG. 12 is a graph showing a simulation result of a temperature rise of a conventional power semiconductor module when transient heat loss occurs.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 1 1st metal heat sink 2 1st insulating thin plate 3 metal thin plate 4 power semiconductor element 5 power semiconductor element 6 insulating package 7 insulating gel 8 emitter terminal 9 collector terminal 10 gate terminal 11 bonding wire 12 1st Wide metal conductor 13 Second wide metal conductor 14 Third metal conductor 15 Second insulating thin plate 16 Second metal heat sink 17 Groove 18 Cooler

Claims (7)

[Claims] 1. A semiconductor module having one or more power semiconductor elements and a plurality of external lead terminals electrically connected to the power semiconductor element, wherein at least one of the plurality of external lead terminals is provided. Are electrically connected to the power semiconductor element by a conductor having a certain width or thickness, and the conductor has a sufficient heat capacity to absorb transient heat generation of the power semiconductor element. A semiconductor module characterized by the above-mentioned. 2. The device according to claim 1, wherein the plurality of external extraction terminals include an emitter terminal, a collector terminal, or a gate terminal.
A semiconductor module according to item 1. 3. A bottom plate made of a metal radiator plate, one or more power semiconductor elements mounted on the bottom plate via an insulating plate and a metal plate, and electrically connected to the power semiconductor element. A semiconductor module having a plurality of external lead terminals connected thereto, wherein the power semiconductor element is in contact with an upper part of the power semiconductor element and the external lead terminal via an insulating plate and a metal plate; The semiconductor module according to claim 1, further comprising a metal heat sink. 4. The semiconductor module according to claim 3, wherein the plurality of external lead terminals are provided in parallel with the upper and lower two metal heat sinks. 5. A groove having a frame-like planar pattern provided around one or both outer surfaces of the upper and lower metal heat sinks around a mounting region of the power semiconductor element. Item 5. The semiconductor module according to item 3 or 4. 6. A cooling device according to claim 3, wherein one or both of said two upper and lower metal radiating plates are coolers.
The semiconductor module according to any one of the above. 7. A bottom plate made of a metal radiator plate, one or more power semiconductor elements mounted on the bottom plate via an insulating plate and a metal plate, and electrically connected to the power semiconductor element. In a semiconductor module having a plurality of conductors to be connected and a package for accommodating the plurality of conductors, the conductor has a certain width or thickness,
A semiconductor module having a sufficient heat capacity for absorbing transient heat generation of a power semiconductor element, being drawn out of the package, and using the conductor itself as an external lead terminal.