JP2011138964A - Semiconductor device and method of manufacturing semiconductor device - Google Patents

Semiconductor device and method of manufacturing semiconductor device Download PDF

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JP2011138964A
JP2011138964A JP2009298714A JP2009298714A JP2011138964A JP 2011138964 A JP2011138964 A JP 2011138964A JP 2009298714 A JP2009298714 A JP 2009298714A JP 2009298714 A JP2009298714 A JP 2009298714A JP 2011138964 A JP2011138964 A JP 2011138964A
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semiconductor device
connection terminal
semiconductor chip
lid member
conductive layer
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JP5409344B2 (en
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Kosuke Ikeda
康亮 池田
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Shindengen Electric Manufacturing Co Ltd
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    • H01L24/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L24/36—Structure, shape, material or disposition of the strap connectors prior to the connecting process
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    • H01L2224/371—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
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    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
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    • H01L2224/4005—Shape
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    • H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
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    • H01L2224/401—Disposition
    • H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
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    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/151—Die mounting substrate
    • H01L2924/156—Material
    • H01L2924/15786—Material with a principal constituent of the material being a non metallic, non metalloid inorganic material
    • H01L2924/15787—Ceramics, e.g. crystalline carbides, nitrides or oxides
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    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

<P>PROBLEM TO BE SOLVED: To provide a semiconductor device that improves heat radiation efficiency and suppresses breakage of a coupling portion of a connection terminal, to improve electric reliability. <P>SOLUTION: The semiconductor device includes: a semiconductor chip 2, a storage case 4 which accommodates the semiconductor chip 2 inside; the connection terminal 6 having one end connected to an upper surface of the semiconductor chip 2; a sealing layer 9 charged in the storage case 4 so that the semiconductor chip 2 and connection terminal 6 are buried; and a cover material 8 provided over the sealing layer 9 using a material having higher thermal conductivity than a material of the sealing layer 9, and thermally connected to the connection terminal 6. <P>COPYRIGHT: (C)2011,JPO&INPIT

Description

本発明は、半導体装置および半導体装置の製造方法に関するものである。   The present invention relates to a semiconductor device and a method for manufacturing the semiconductor device.

従来の半導体装置には、半導体チップを収容するケース内に半導体チップを搭載し、半導体チップとケースの内面に露出する接続端子の端子面とを電気的に接続しているものがある（例えば、特許文献１から４参照）。これらの半導体装置では、ケース内部にゲル状樹脂（封止材）を充填して、収容する半導体チップや導通に用いる接続端子（ワイヤ）等を埋設することで、ケース内の収容物を保護している。   Some conventional semiconductor devices have a semiconductor chip mounted in a case housing the semiconductor chip, and electrically connect the semiconductor chip and the terminal surface of the connection terminal exposed on the inner surface of the case (for example, (See Patent Documents 1 to 4). In these semiconductor devices, the inside of the case is filled with a gel resin (sealing material), and the semiconductor chip to be accommodated, the connection terminals (wires) used for conduction, etc. are buried, thereby protecting the contents in the case. ing.

また、半導体チップは、使用時の発熱による故障を抑制するため放熱を行う必要がある。そのため、下記の特許文献１から４では、収容ケースの底面が、熱伝導を促進する金属で形成されており、半導体チップで生じる熱を放熱する放熱板として利用し、放熱を行う構成となっている。   Further, the semiconductor chip needs to dissipate heat in order to suppress failure due to heat generation during use. For this reason, in Patent Documents 1 to 4 below, the bottom surface of the housing case is formed of a metal that promotes heat conduction, and the heat generated by the semiconductor chip is used as a heat radiating plate to radiate heat. Yes.

特開２００４−２１４２９４号公報JP 2004-214294 A 特開平１１−８７５６７号公報JP-A-11-87567 特開平９−２３２５１０号公報JP-A-9-232510 特開平１１−２６６９１号公報JP 11-26691 A

しかし、従来の半導体装置では放熱が不十分であった。半導体装置のうち、例えば大電流を扱うパワーモジュールでは、発熱量が大きいため効率的な放熱が求められるが、上述の半導体装置では、半導体チップを搭載した収容ケース底面からの放熱が支配的となっている。これは、封止材として用いられるゲル状樹脂の熱伝導性が低く、封止材側からの効率的な放熱を行うことが困難となっているためであり、放熱効率の向上という点から改善する余地があった。   However, heat radiation is insufficient in the conventional semiconductor device. Among semiconductor devices, for example, a power module that handles a large current requires a large amount of heat generation, so that efficient heat dissipation is required. However, in the above-described semiconductor device, heat dissipation from the bottom surface of the housing case on which the semiconductor chip is mounted is dominant. ing. This is because the thermal conductivity of the gel-like resin used as the sealing material is low, making it difficult to efficiently radiate heat from the sealing material side. There was room to do.

また、上記構成の半導体装置に対しては、信頼性試験として、急激な加熱冷却を繰り返す熱衝撃試験が実施される。この試験において半導体装置を急激に加熱すると、接続端子の接合部に亀裂が生じやすかった。特に、接続端子は通常ハンダ付けにより接続されているが、このハンダ界面に亀裂が生じやすく、求める高信頼性が得られにくかった。すなわち、樹脂材料からなる封止材の熱膨張係数が、導電性材料（金属材料）からなる接続端子よりも低いため、半導体装置を加熱すると封止材の熱膨張により接続端子の接合部に張力が加わり、亀裂が生じ易くなっていた。   For the semiconductor device having the above-described configuration, a thermal shock test in which rapid heating and cooling are repeated is performed as a reliability test. In this test, when the semiconductor device was heated rapidly, cracks were likely to occur in the joint portion of the connection terminal. In particular, the connection terminals are usually connected by soldering, but cracks are likely to occur at the solder interface, making it difficult to obtain the required high reliability. That is, since the thermal expansion coefficient of the sealing material made of a resin material is lower than that of the connection terminal made of a conductive material (metal material), when the semiconductor device is heated, the tensile force is applied to the connection portion of the connection terminal due to the thermal expansion of the sealing material. Was added, and cracking was likely to occur.

上述の半導体装置のように放熱が不十分であると、このような接続端子の結合部の破損も生じ易くなり、さらなる装置の信頼性低下に繋がる。   If the heat dissipation is insufficient as in the above-described semiconductor device, the connecting portion of the connection terminal is liable to be damaged, leading to further reduction in the reliability of the device.

本発明はこのような事情に鑑みてなされたものであって、放熱効率の向上と接続端子の結合部の破損抑制とを図り、電気的な信頼性の向上を可能とする半導体装置を提供することを目的とする。また、このような半導体装置の製造方法を提供することをあわせて目的とする。   The present invention has been made in view of such circumstances, and provides a semiconductor device capable of improving heat dissipation efficiency and suppressing breakage of a connecting portion of a connection terminal and improving electrical reliability. For the purpose. It is another object to provide a method for manufacturing such a semiconductor device.

上記の課題を解決するため、本発明の半導体装置は、半導体チップと、前記半導体チップを内部に収容する収容ケースと、前記半導体チップの上面に一端が接続された接続端子と、前記収容ケースの内部に充填されて前記半導体チップ及び前記接続端子を埋設する封止層と、前記封止層の上部に、前記封止層の材料よりも高い伝熱性を有する材料を用いて設けられ、前記接続端子と熱的に接続された蓋材と、を有することを特徴とする。   In order to solve the above problems, a semiconductor device according to the present invention includes a semiconductor chip, a housing case that houses the semiconductor chip, a connection terminal having one end connected to an upper surface of the semiconductor chip, and a housing case. A sealing layer that is filled inside to embed the semiconductor chip and the connection terminal, and an upper part of the sealing layer is provided using a material having higher heat conductivity than the material of the sealing layer, and the connection And a lid member thermally connected to the terminal.

この構成によれば、半導体チップで発生した熱は、接続端子を介して蓋材に伝わることとなる。蓋材は封止層よりも高い熱伝導性を有しているため、半導体チップで発生した熱が封止層を介して放熱されていた従来の構造と比べ、封止層側からの効率的な放熱を可能とし、装置全体として放熱効率を向上させることができる。   According to this configuration, heat generated in the semiconductor chip is transmitted to the lid member via the connection terminal. Since the lid material has higher thermal conductivity than the sealing layer, it is more efficient from the sealing layer side than the conventional structure in which the heat generated in the semiconductor chip is dissipated through the sealing layer. Heat dissipation can be achieved, and the heat dissipation efficiency of the entire apparatus can be improved.

また、使用環境や使用発熱によって装置が加熱され、封止材の熱膨張により接続端子の接合部に張力が加わるとしても、蓋材の自重によって封止材の上から接合部に荷重が係った状態であるため、接合部における亀裂発生が抑制される。さらに、本発明の半導体装置では、上述のように放熱効率が向上しているため、封止材の熱膨張による体積変化自体を抑制することができるため、熱衝撃が抑制され、亀裂発生を抑えることができる。
したがって、電気的な信頼性の向上を可能とする半導体装置とすることができる。 In addition, even if the device is heated by the usage environment or heat generation and tension is applied to the joint of the connection terminal due to the thermal expansion of the sealing material, a load is applied from above the sealing material to the joint due to the weight of the lid. Therefore, the occurrence of cracks at the joint is suppressed. Furthermore, in the semiconductor device of the present invention, since the heat dissipation efficiency is improved as described above, the volume change itself due to the thermal expansion of the sealing material can be suppressed, so that the thermal shock is suppressed and the generation of cracks is suppressed. be able to.
Therefore, the semiconductor device can be improved in electrical reliability.

本発明においては、前記接続端子と前記蓋材との間に両者に当接して設けられた絶縁性を有する熱伝導層を有することが望ましい。
この構成によれば、接続端子と蓋材との間の熱伝導を促進し放熱の効率を高めることができる。また、熱伝導層が絶縁性を有することとしているため、例えば蓋材が導電性を有している場合であっても、動作不良を起こすことなく放熱を行うことができる。 In this invention, it is desirable to have the heat conductive layer which has the insulation provided between the said connection terminal and the said cover material in contact with both.
According to this structure, the heat conduction between the connection terminal and the lid member can be promoted, and the efficiency of heat dissipation can be increased. Further, since the heat conductive layer has insulating properties, for example, even when the lid member has conductivity, heat can be radiated without causing malfunction.

本発明においては、前記接続端子が帯状であり、前記熱伝導層と帯面で当接していることが望ましい。
この構成によれば、熱伝導層と接続端子との接触面積が大きくなるため、効率的に熱を伝えることができ、放熱効率をより向上させることができる。 In the present invention, it is desirable that the connection terminal has a strip shape and is in contact with the heat conductive layer at the strip surface.
According to this configuration, since the contact area between the heat conductive layer and the connection terminal is increased, heat can be efficiently transmitted, and heat dissipation efficiency can be further improved.

本発明においては、前記接続端子を複数有し、前記熱伝導層は、前記複数の接続端子にまたがって当接していることが望ましい。
この構成によれば、複数の接合子を介して放熱することができるため、放熱効率を高めることができる。熱伝導層は絶縁性を有することとしているため、複数の接続端子にまたがって配置されていても動作不良を起こすことなく放熱を行うことができる。 In the present invention, it is preferable that a plurality of the connection terminals are provided, and the heat conductive layer is in contact with the plurality of connection terminals.
According to this configuration, since heat can be radiated through the plurality of connectors, the heat radiation efficiency can be increased. Since the heat conductive layer has insulating properties, heat can be radiated without causing malfunction even when the heat conductive layer is disposed across a plurality of connection terminals.

本発明においては、前記収容ケースの内壁に凹部が設けられ、前記蓋材が前記凹部に嵌合していることが望ましい。
封止材の体積膨張による応力が蓋材の自重を超える場合には、封止材の上に蓋材が配置されていても封止材が蓋材を押し上げ、結果として接合部に亀裂を発生させるおそれがある。しかし、この構成によれば、蓋材が収容ケースに設けられた凹部に嵌合しているため、封止材の熱膨張によって蓋材が押し上げられることなく、接合部に確実に荷重をかけ続けることができ、接合部の亀裂発生を抑制することができる。 In the present invention, it is desirable that a recess is provided on the inner wall of the housing case, and the lid member is fitted in the recess.
When the stress due to the volume expansion of the sealing material exceeds its own weight, the sealing material pushes up the lid material even if the lid material is placed on the sealing material, resulting in cracks in the joint There is a risk of causing. However, according to this configuration, since the lid member is fitted in the recess provided in the housing case, the lid member is not pushed up by the thermal expansion of the sealing material, and the load is reliably applied to the joint portion. And the occurrence of cracks in the joint can be suppressed.

本発明においては、高さ方向に湾曲または屈曲した前記接続端子を複数有し、湾曲または屈曲した各接続端子の高さ方向の頂点位置が、いずれも等しいことが望ましい。
この構成によれば、すべての接続端子を熱伝導層を介して蓋材の下面（接続端子側の面）に接触させることが容易となる。 In the present invention, it is preferable that a plurality of the connection terminals curved or bent in the height direction are provided, and the vertex positions in the height direction of the respective connection terminals bent or bent are equal.
According to this structure, it becomes easy to make all the connection terminals contact the lower surface (surface on the connection terminal side) of the lid member via the heat conductive layer.

本発明においては、前記収容ケースは、前記半導体チップを配置する面の下側に放熱板を有することが望ましい。
この構成によれば、封止層側からの放熱に加え、半導体チップを配置する面からの放熱も容易となり、放熱効率が高い半導体装置とすることができる。 In the present invention, it is desirable that the housing case has a heat radiating plate below a surface on which the semiconductor chip is arranged.
According to this configuration, in addition to heat radiation from the sealing layer side, heat radiation from the surface on which the semiconductor chip is disposed is facilitated, and a semiconductor device with high heat radiation efficiency can be obtained.

また、本発明の半導体装置の製造方法は、収容ケース内に半導体チップを収容した半導体装置の製造方法であって、一端が前記半導体チップ上にハンダ付けされた接続端子に、絶縁性を有する形成材料を用いて前記接続端子に当接した熱伝導層を設ける工程と、貫通孔を有する蓋材を、前記貫通孔が前記熱伝導層と平面的に重ならない位置となるように前記熱伝導層の上部に当接させて配置する工程と、前記貫通孔を介して、前記収容ケースと前記蓋材とに囲まれた空間に封止材を充填する工程と、を有することを特徴とする。
この構成によれば、接続端子、熱伝導層、蓋材を確実に接触させた上で、予め蓋材に設けられた貫通孔から封止材を充填するため、接続端子、熱伝導層、蓋材が接触した封止構造を容易に形成することができる。 The method for manufacturing a semiconductor device of the present invention is a method for manufacturing a semiconductor device in which a semiconductor chip is accommodated in a housing case, wherein one end of the connection terminal soldered on the semiconductor chip is formed with insulation. A step of providing a heat conductive layer in contact with the connection terminal using a material, and a lid member having a through hole, wherein the heat conductive layer is positioned so that the through hole does not overlap the heat conductive layer in a plane. And a step of placing the sealing material in a space surrounded by the housing case and the lid material via the through hole.
According to this configuration, since the connection terminal, the heat conductive layer, and the lid material are securely brought into contact with each other, and the sealing material is filled from the through hole provided in the lid material in advance, the connection terminal, the heat conduction layer, the lid A sealing structure in contact with the material can be easily formed.

本発明においては、前記収容ケースは、内壁に凹部が設けられ、前記蓋材を配置する工程では、前記凹部に前記蓋材を嵌合させることが望ましい。
この構成によれば、封止材の充填時に封止材の流動によって蓋材が持ち上がることがない。そのため、接続端子、熱伝導層、蓋材が確実に接触した封止構造を良好に形成することができる。 In the present invention, the housing case is preferably provided with a recess in an inner wall, and in the step of disposing the lid member, the lid member is preferably fitted into the recess.
According to this configuration, the lid material is not lifted by the flow of the sealing material when the sealing material is filled. Therefore, it is possible to satisfactorily form a sealing structure in which the connection terminal, the heat conductive layer, and the lid material are in reliable contact.

本発明の半導体装置によれば、半導体チップで発生した熱が接続端子、熱伝導層を介して蓋材に伝わる。そのため、従来の構造では困難であった封止層側からの効率的な放熱を可能とし、放熱効率を向上させることができる。
また、使用環境や使用発熱によって装置が加熱され、接続端子の接合部に張力が加わるとしても、接合部には蓋材の自重によって荷重がかかっているため、亀裂発生が抑制される。さらに、本発明の半導体装置では、上述のように放熱効率が向上しているため、熱衝撃も抑制され、亀裂発生を抑えることができる。
したがって、電気的な信頼性の向上を可能とする半導体装置とすることができる。 According to the semiconductor device of the present invention, heat generated in the semiconductor chip is transmitted to the lid member via the connection terminal and the heat conductive layer. Therefore, it is possible to efficiently dissipate heat from the sealing layer side, which is difficult with the conventional structure, and to improve heat dissipating efficiency.
In addition, even if the device is heated by the use environment and heat generation and tension is applied to the joint portion of the connection terminal, the load is applied to the joint portion by the dead weight of the lid material, so that the generation of cracks is suppressed. Furthermore, in the semiconductor device of the present invention, since the heat dissipation efficiency is improved as described above, thermal shock is also suppressed and cracking can be suppressed.
Therefore, the semiconductor device can be improved in electrical reliability.

本発明の実施形態に係る半導体装置の平面図である。1 is a plan view of a semiconductor device according to an embodiment of the present invention. 本発明の実施形態に係る半導体装置の断面図である。It is sectional drawing of the semiconductor device which concerns on embodiment of this invention. 本発明の実施形態に係る半導体装置の製造方法を示す工程図である。It is process drawing which shows the manufacturing method of the semiconductor device which concerns on embodiment of this invention. 本発明の実施形態の変形例に係る半導体装置の断面図である。It is sectional drawing of the semiconductor device which concerns on the modification of embodiment of this invention.

［第１実施形態］
以下、図１〜図３を参照しながら、本発明の実施形態に係る半導体装置について説明する。なお、以下の全ての図面においては、図面を見やすくするため、各構成要素の寸法や比率などは適宜異ならせてある。 [First Embodiment]
A semiconductor device according to an embodiment of the present invention will be described below with reference to FIGS. In all the drawings below, the dimensions and ratios of the constituent elements are appropriately changed in order to make the drawings easy to see.

図１は、本実施形態の半導体装置１Ａの平面図であり、図２は、図１の線分Ａ−Ａにおける概略断面図である。   FIG. 1 is a plan view of a semiconductor device 1A of the present embodiment, and FIG. 2 is a schematic cross-sectional view taken along line AA in FIG.

図１，２に示すように、本実施形態に係る半導体装置１Ａは、半導体チップ２および半導体チップ２が配置される基板３と、これらを内部に収容する収容ケース４と、半導体チップ２に一端が接続され、上方（高さ方向）に屈曲して設けられた接続端子６と、接続端子６の上部に設けられた熱伝導層７と、熱伝導層７に接して設けられた蓋材８と、収容ケース４の内壁と蓋材８とで囲まれた空間に充填され、半導体チップ２、セラミック基板３及び接続端子６を埋設する封止層９と、を備えている。   As shown in FIGS. 1 and 2, the semiconductor device 1 </ b> A according to the present embodiment includes a semiconductor chip 2, a substrate 3 on which the semiconductor chip 2 is disposed, a housing case 4 that houses them, and one end on the semiconductor chip 2. Are connected and bent upward (in the height direction), the connecting terminal 6, the heat conductive layer 7 provided on the upper part of the connecting terminal 6, and the lid 8 provided in contact with the heat conductive layer 7. And a sealing layer 9 filled in the space surrounded by the inner wall of the housing case 4 and the lid member 8 and embedding the semiconductor chip 2, the ceramic substrate 3 and the connection terminals 6.

基板３は、セラミックスを形成材料とする基板本体３ａと、基板本体３ａの上面に設けられた配線パターン３ｂと、を有している。図では、２つの配線パターン３ｂが形成されているものとして示しており、これらは互いに離間して形成されている。   The substrate 3 has a substrate body 3a made of ceramics as a forming material, and a wiring pattern 3b provided on the upper surface of the substrate body 3a. In the drawing, two wiring patterns 3b are shown as being formed, and these are formed apart from each other.

収容ケース４は、上面４１ａに基板３及び半導体チップ２を順番に積層する平面視矩形板状の底壁板部４１と、底壁板部４１の上面４１ａの周縁から上方に延びて平面視矩形環状に形成された周壁部４２とを備えた箱型に形成されている。なお、収容ケース４の内部とは、底壁板部４１と周壁部１２とによって囲繞される空間部分を示している。   The housing case 4 has a rectangular plate-like bottom wall plate portion 41 in which the substrate 3 and the semiconductor chip 2 are sequentially stacked on the upper surface 41a, and a rectangular shape in a plan view extending upward from the periphery of the upper surface 41a of the bottom wall plate portion 41. It is formed in a box shape provided with a peripheral wall portion 42 formed in an annular shape. The inside of the housing case 4 indicates a space portion surrounded by the bottom wall plate portion 41 and the peripheral wall portion 12.

底壁板部４１は、半導体チップ２において生じる熱を外方に放熱させる放熱板としての機能を有している。底壁板部４１の形成材料としては、例えば、銅（Ｃｕ）、タングステン、モリブデン等のように、放熱性（熱伝導性）の高い材料を用いることができ、更に表面にＮｉメッキを施したものでもよい。底壁板部４１の外側には、更に放熱用のヒートシンクを設けることもできる。もちろん、底壁板部４１に放熱機能を持たせない構成を採用することもできる。   The bottom wall plate portion 41 has a function as a heat radiating plate that radiates heat generated in the semiconductor chip 2 outward. As a material for forming the bottom wall plate portion 41, for example, a material having high heat dissipation (thermal conductivity) such as copper (Cu), tungsten, molybdenum or the like can be used, and the surface is plated with Ni. It may be a thing. A heat sink for heat dissipation can be further provided outside the bottom wall plate portion 41. Of course, the structure which does not give the heat-radiating function to the bottom wall board part 41 is also employable.

周壁部４２は、電気的な絶縁性、及び収容ケース４としての剛性を有しており、形成材料としては、例えばエポキシ樹脂やウレタン樹脂等の樹脂材料を用いることができる。これらには、必要に応じてガラスフィラーやシリカ等の添加剤を加えることとしても良い。周壁部４２には、複数の外部接続端子５が封止されている。   The peripheral wall portion 42 has electrical insulation and rigidity as the housing case 4, and a resin material such as an epoxy resin or a urethane resin can be used as a forming material. It is good also as adding additives, such as a glass filler and a silica, to these as needed. A plurality of external connection terminals 5 are sealed on the peripheral wall portion 42.

外部接続端子５は、導電性部材を断面視Ｌ字状に屈曲させて形成されており、一端が周壁部４２内において上方に延びるように配されると共に、他端が収容ケース４の内部に露出するように配されている。   The external connection terminal 5 is formed by bending a conductive member in an L shape in cross section, and is arranged so that one end extends upward in the peripheral wall portion 42 and the other end is inside the housing case 4. It is arranged to be exposed.

接続端子６は、導電性材料を用いて帯状に形成されており、半導体チップ２、配線パターン３ｂ、外部接続端子５の表面とハンダなどの接合部材と介して接続されている。これにより、半導体チップ２の上面と配線パターン３ｂ、あるいは配線パターン３ｂと外部接続端子５を電気的に接続している。   The connection terminal 6 is formed in a strip shape using a conductive material, and is connected to the surface of the semiconductor chip 2, the wiring pattern 3 b, and the external connection terminal 5 via a bonding member such as solder. Thereby, the upper surface of the semiconductor chip 2 and the wiring pattern 3b, or the wiring pattern 3b and the external connection terminal 5 are electrically connected.

接続端子６の形成材料としては、通常の配線材料としてもちいる銅やアルミニウム等の金属材料を用いることができる。また、帯状の接続端子６は半導体装置１Ａの高さ方向に屈曲しており、複数の接続端子６における高さ方向の頂点位置が互いに等しくなっている。もちろん、接続端子６は湾曲していても良く、全ての接続端子６の頂点位置が同じではない構成であってもよい。   As a material for forming the connection terminal 6, a metal material such as copper or aluminum used as a normal wiring material can be used. The strip-like connection terminals 6 are bent in the height direction of the semiconductor device 1A, and the vertex positions in the height direction of the plurality of connection terminals 6 are equal to each other. Of course, the connection terminal 6 may be curved, and the configuration may be such that the vertex positions of all the connection terminals 6 are not the same.

熱伝導層７は、複数の接続端子６の頂点位置にそれぞれ設けられている。本実施形態の半導体装置１Ａでは、各接続端子６の頂点位置がすべて等しいため、それぞれの熱伝導層７は同じ厚さに形成されている。接続端子６の頂点位置が異なる場合には、熱伝導層７の厚さを変えることにより、各接続端子６に設けられた熱伝導層７の上部での位置を良好に揃える構成とすると良い。   The heat conductive layer 7 is provided at each vertex position of the plurality of connection terminals 6. In the semiconductor device 1A of this embodiment, since the vertex positions of the connection terminals 6 are all equal, the heat conductive layers 7 are formed to have the same thickness. When the apex positions of the connection terminals 6 are different, it is preferable that the positions of the upper portions of the heat conduction layers 7 provided on the connection terminals 6 are well aligned by changing the thickness of the heat conduction layer 7.

熱伝導層７の形成材料としては、絶縁性を有し且つ高熱伝導性を有する材料を採用することができ、高い熱伝導性が付与された樹脂材料が好適である。熱伝導層７の熱伝導性は、封止層９の形成材料よりも高いことが好ましい。このような材料としては、例えば、日立化成工業株式会社製の「ハイセット」を採用することができる。   As a material for forming the heat conductive layer 7, a material having insulating properties and high heat conductivity can be employed, and a resin material imparted with high heat conductivity is preferable. The thermal conductivity of the heat conductive layer 7 is preferably higher than the material for forming the sealing layer 9. As such a material, for example, “High Set” manufactured by Hitachi Chemical Co., Ltd. can be adopted.

蓋材８は、複数の熱伝導層７に接するように配置され、端部が周壁部４２の内壁に形成された凹部４３に嵌合している。凹部４３は、周壁部４２の内壁に沿って収容ケース４の内部を囲むように連続する帯状のものでもよく、また、収容ケース４の内部を囲むように設定された配列軸上に複数の凹部を形成したものでも良い。   The lid member 8 is disposed so as to be in contact with the plurality of heat conductive layers 7, and an end portion thereof is fitted in a concave portion 43 formed on the inner wall of the peripheral wall portion 42. The concave portion 43 may be a belt-like shape continuous so as to surround the inside of the housing case 4 along the inner wall of the peripheral wall portion 42, and a plurality of concave portions on the arrangement axis set so as to surround the inside of the housing case 4. May be formed.

複数の凹部４３を設ける場合には、蓋材８の周囲に対応する凸部を設ける必要がある。蓋材８が配置されていることにより、半導体装置１Ａの内部構造が外部から視認できないように隠すことができ、装置のデザイン性を高めることができる。   In the case where a plurality of concave portions 43 are provided, it is necessary to provide convex portions corresponding to the periphery of the lid member 8. By disposing the lid member 8, the internal structure of the semiconductor device 1A can be hidden so that it cannot be seen from the outside, and the design of the device can be improved.

このような蓋材８は、封止層９の形成材料よりも高い形成材料を用いて設けられており、例えば、セラミックスや金属材料を用いることができる。蓋材８の形成材料として金属材料を選択したとしても、蓋材８に接する周壁部４２や熱伝導層７の形成材料が絶縁性を有しているため、内部の配線パターン３ｂや接続端子６と導通することはない。また、蓋材８には、複数の貫通孔８ａ（図１では４つ）が設けられている。貫通孔８ａは、収容ケース４内に蓋材８を配置した場合に、接続端子６と平面的に重ならない位置に設けられている。   Such a lid member 8 is provided using a higher forming material than the forming material of the sealing layer 9, and for example, ceramics or a metal material can be used. Even if a metal material is selected as a material for forming the lid member 8, since the material for forming the peripheral wall portion 42 and the heat conductive layer 7 in contact with the lid member 8 has insulating properties, the internal wiring pattern 3 b and the connection terminal 6 And do not conduct. The lid member 8 is provided with a plurality of through holes 8a (four in FIG. 1). The through hole 8 a is provided at a position that does not overlap the connection terminal 6 in a plan view when the lid member 8 is disposed in the housing case 4.

封止層９は、電気的な絶縁性を有する高分子ゲル（封止材）を形成材料として、収容ケース４と蓋材８とで囲繞された空間を充填している。封止層９の形成材料としては、例えばシリコーンゲルが挙げられる。   The sealing layer 9 is filled with a space surrounded by the housing case 4 and the lid member 8 by using a polymer gel (sealing material) having electrical insulation as a forming material. As a material for forming the sealing layer 9, for example, silicone gel is used.

このような構成の半導体装置１Ａでは、使用により半導体チップ２が発熱した場合における、接続端子６の接続部での亀裂発生を抑制することができる。   In the semiconductor device 1 </ b> A having such a configuration, it is possible to suppress the occurrence of cracks at the connection portions of the connection terminals 6 when the semiconductor chip 2 generates heat by use.

従来の半導体装置では、使用環境や使用発熱によって半導体装置が加熱されると、封止層を構成する封止材が熱膨張し、接続端子の接合部（例えばハンダ付けしている部分）に張力が加わるために、接合部に亀裂が発生しやすいという不具合があった。しかし、本実施形態の半導体装置１Ａでは、封止層９の熱膨張により接続端子６の接合部に張力が加わるとしても、蓋材８の自重、および蓋材８の凹部４３における嵌合によって、接合部に下向きの力が係った状態であるため、接合部における亀裂発生が抑制される。   In a conventional semiconductor device, when the semiconductor device is heated due to usage environment or heat generation, the sealing material constituting the sealing layer is thermally expanded, and tension is applied to the connection portion (for example, a soldered portion) of the connection terminal. Therefore, there is a problem that cracks are likely to occur at the joint. However, in the semiconductor device 1A of the present embodiment, even if tension is applied to the joint portion of the connection terminal 6 due to the thermal expansion of the sealing layer 9, due to the weight of the lid member 8 and the fitting in the recess 43 of the lid member 8, Since the downward force is applied to the joint portion, the occurrence of cracks in the joint portion is suppressed.

また、半導体チップ２で発生した熱は、直接または配線パターン３ｂを介して接続端子６に伝わり、熱伝導層７を介して蓋材８に伝わることとなる。接続端子６、熱伝導層７および蓋材８は、封止層９よりも高い熱伝導性を有しているため、半導体チップ２で発生した熱が封止層９を介して放熱されていた従来の構造と比べ、効率的に放熱されることとなる。すると、封止層９側からの放熱が促進され、半導体装置１Ａ全体として放熱効率が向上することとなる。すると、封止層９の熱膨張による体積変化自体を抑制することができるため、熱衝撃が抑制され、亀裂発生を抑えることができる。   Further, the heat generated in the semiconductor chip 2 is transmitted to the connection terminal 6 directly or via the wiring pattern 3 b and is transmitted to the lid member 8 via the heat conductive layer 7. Since the connection terminal 6, the heat conductive layer 7, and the lid member 8 have higher thermal conductivity than the sealing layer 9, the heat generated in the semiconductor chip 2 was dissipated through the sealing layer 9. As compared with the conventional structure, the heat is efficiently radiated. Then, heat dissipation from the sealing layer 9 side is promoted, and the heat dissipation efficiency is improved as a whole of the semiconductor device 1A. Then, since the volume change itself due to the thermal expansion of the sealing layer 9 can be suppressed, the thermal shock is suppressed and the generation of cracks can be suppressed.

図３は、本実施形態の半導体装置１Ａの製造方法を示す工程図であり、図２に対応する図である。   FIG. 3 is a process diagram showing the method for manufacturing the semiconductor device 1A of the present embodiment, and corresponds to FIG.

まず、図３（ａ）に示すように、収容ケース４内に基板３および基板３上に実装された半導体チップ２を収容し、接続端子６を高さ方向に湾曲させて半導体チップ２と配線パターン３ｂ、配線パターン３ｂと外部接続端子５との電気的導通を行う。そして、接続端子６の頂上部付近に熱伝導層７を設ける。このとき、接続端子６の頂上部は、高さ方向の位置が収容ケース４の内壁に設けられた凹部４３の位置よりも高くなっている。   First, as shown in FIG. 3A, the substrate 3 and the semiconductor chip 2 mounted on the substrate 3 are housed in the housing case 4, and the connection terminals 6 are bent in the height direction to connect the semiconductor chip 2 and the wiring. The pattern 3b, the wiring pattern 3b, and the external connection terminal 5 are electrically connected. A heat conductive layer 7 is provided near the top of the connection terminal 6. At this time, the height of the top of the connection terminal 6 is higher than the position of the recess 43 provided on the inner wall of the housing case 4.

次いで、図３（ｂ）に示すように、収容ケース４の内壁に設けられた凹部４３に蓋材８を嵌合させ、蓋材８を配置する。接続端子６の頂上部の位置が凹部４３の位置よりも高いため、蓋材８を配置する際には、蓋材８が熱伝導層７に当接しながら接続端子６を押し下げることとなり、自然に蓋材８と熱伝導層７とが密着した状態となる。   Next, as shown in FIG. 3B, the lid member 8 is fitted into the recess 43 provided on the inner wall of the housing case 4, and the lid member 8 is arranged. Since the position of the top of the connection terminal 6 is higher than the position of the recess 43, when the lid member 8 is disposed, the lid member 8 pushes down the connection terminal 6 while abutting against the heat conduction layer 7. The lid 8 and the heat conductive layer 7 are in close contact with each other.

次いで、図３（ｃ）に示すように、蓋材８に設けられた貫通孔８ａから、シリコーンゲルを注入し、封止層９を形成する。貫通孔８ａは複数もうけられているため、少なくとも一つの貫通孔８ａからはシリコーンゲルの注入を行わないようにして、該貫通孔８ａから注入部分の空気を抜きながらシリコーンゲルの注入を行う。   Next, as shown in FIG. 3C, silicone gel is injected from the through hole 8 a provided in the lid member 8 to form the sealing layer 9. Since a plurality of through-holes 8a are provided, silicone gel is injected from the through-hole 8a while the silicone gel is not injected from at least one through-hole 8a and the air in the injection portion is removed from the through-hole 8a.

この際、蓋材８が凹部４３に嵌合しているため、シリコーンゲルの注入によって蓋材８が持ち上がることなく、蓋材８と熱伝導層７との密着を維持することができる。シリコーンゲルの注入が終了すると、必要に応じて貫通孔８ａを別部材で閉じ、封止層９が外気に触れないようにすることとしても良い。
本実施形態の半導体装置１Ａは、以上のようにして製造する。 At this time, since the lid member 8 is fitted in the recess 43, the lid member 8 and the heat conductive layer 7 can be kept in close contact with each other without the lid member 8 being lifted by the injection of the silicone gel. When the injection of the silicone gel is completed, the through hole 8a may be closed with another member as necessary so that the sealing layer 9 does not touch the outside air.
The semiconductor device 1A of the present embodiment is manufactured as described above.

以上のような構成の本実施形態の半導体装置１Ａでは、封止層９側からの効率的な放熱を実現するとともに、接続端子の接合部における亀裂発生を抑制し、電気的な信頼性の向上を可能とする半導体装置１Ａとすることができる。   In the semiconductor device 1A of the present embodiment having the above-described configuration, efficient heat dissipation from the sealing layer 9 side is realized, crack generation at the joint portion of the connection terminal is suppressed, and electrical reliability is improved. Thus, the semiconductor device 1A can be configured.

また、以上のような半導体装置１Ａの製造方法では、接続端子６、熱伝導層７、蓋材８を確実に接触させた上で、予め蓋材８に設けられた貫通孔８ａから封止材を充填するため、接続端子６、熱伝導層７、蓋材８が接触した封止構造を容易に形成することができる。   Further, in the manufacturing method of the semiconductor device 1A as described above, the connecting terminal 6, the heat conductive layer 7, and the lid member 8 are reliably brought into contact with each other, and then the sealing material is inserted from the through hole 8a provided in the lid member 8 in advance. Therefore, the sealing structure in which the connection terminal 6, the heat conductive layer 7, and the lid member 8 are in contact with each other can be easily formed.

なお、本実施形態の半導体装置１Ａでは、熱伝導層７が複数の接続端子６にそれぞれ設けられていることとしたが、これに限らず、複数の接続端子６にまたがって当接する熱伝導層を設けることとしても良い。この場合は、例えば蓋材８の封止層９に面する側の全面に熱伝導層７を設けておき、半導体チップ２と接続された複数の接続端子６に共通して熱伝導層７が接するように蓋材８を配置するようにして、半導体装置１Ａを組み立てると良い。   In the semiconductor device 1 </ b> A of the present embodiment, the heat conductive layer 7 is provided on each of the plurality of connection terminals 6. It is good also as providing. In this case, for example, the heat conductive layer 7 is provided on the entire surface of the lid 8 facing the sealing layer 9, and the heat conductive layer 7 is shared by the plurality of connection terminals 6 connected to the semiconductor chip 2. The semiconductor device 1 </ b> A may be assembled by placing the lid member 8 so as to be in contact with the semiconductor device 1 </ b> A.

また、本実施形態の半導体装置１Ａでは、熱伝導層７を設けることとしたが、熱伝導層７を配設せずに、接続端子６と蓋材８とが接し半導体チップ２からの放熱を促進する構成であってもよい。このような構成の半導体装置は、熱伝導層７を設ける工程を除く他は、上述の製造方法と同様にして製造することができる。   Further, in the semiconductor device 1A of the present embodiment, the heat conductive layer 7 is provided. However, without providing the heat conductive layer 7, the connection terminal 6 and the lid member 8 are in contact with each other to dissipate heat from the semiconductor chip 2. The structure which accelerates | stimulates may be sufficient. The semiconductor device having such a configuration can be manufactured in the same manner as the above-described manufacturing method, except for the step of providing the heat conductive layer 7.

また、本実施形態の半導体装置１Ａでは、収容ケース４から装置上方に向けて外部接続端子５が配設されている構成としたが、本発明はこのような構成の半導体装置に限るものではない。   In the semiconductor device 1A of the present embodiment, the external connection terminals 5 are arranged from the housing case 4 toward the upper part of the device. However, the present invention is not limited to the semiconductor device having such a configuration. .

図４は、本発明の変形例に係る半導体装置１Ｂの断面図である。本実施形態の半導体装置１Ｂは、第１実施形態の半導体装置１Ａと一部共通しており、異なるのは、半導体装置１Ｂが、半導体装置１Ａの外部接続端子５に代えて、基板３から底壁板部４１を貫通して装置下方に向けて外部接続端子５０が配設されている面実装タイプの半導体装置であることである。   FIG. 4 is a cross-sectional view of a semiconductor device 1B according to a modification of the present invention. The semiconductor device 1B of the present embodiment is partially in common with the semiconductor device 1A of the first embodiment. The difference is that the semiconductor device 1B replaces the external connection terminal 5 of the semiconductor device 1A from the substrate 3 with the bottom. That is, the semiconductor device is a surface mount type semiconductor device in which the external connection terminals 50 are disposed through the wall plate portion 41 toward the lower side of the device.

半導体装置１Ｂは、複数の外部接続端子５０を有しており、各外部接続端子５０は、基板本体３ａを介して配線パターン３ｂと接続されている。このような外部接続端子５０を有する半導体装置１Ｂでは、装置下方（底壁板部４１側）で他のプリント基板等と接続する面実装が可能となっている。   The semiconductor device 1B has a plurality of external connection terminals 50, and each external connection terminal 50 is connected to the wiring pattern 3b via the substrate body 3a. In the semiconductor device 1 </ b> B having such external connection terminals 50, surface mounting that can be connected to another printed circuit board or the like below the device (on the bottom wall plate portion 41 side) is possible.

このような構成の半導体装置１Ｂであっても、半導体チップ２で発生した熱は、接続端子６と熱伝導層７とを介して蓋材８から放熱される。そのため、封止層９側からの効率的な放熱を実現するとともに、接続端子の接合部における亀裂発生を抑制し、電気的な信頼性の向上を可能とする半導体装置１Ｂとすることができる。   Even in the semiconductor device 1 </ b> B having such a configuration, the heat generated in the semiconductor chip 2 is radiated from the lid member 8 through the connection terminals 6 and the heat conductive layer 7. Therefore, it is possible to obtain a semiconductor device 1B that realizes efficient heat dissipation from the sealing layer 9 side, suppresses the occurrence of cracks in the joint portion of the connection terminal, and improves electrical reliability.

以上、添付図面を参照しながら本発明に係る好適な実施の形態例について説明したが、本発明は係る例に限定されないことは言うまでもない。上述した例において示した各構成部材の諸形状や組み合わせ等は一例であって、本発明の主旨から逸脱しない範囲において設計要求等に基づき種々変更可能である。   The preferred embodiments of the present invention have been described above with reference to the accompanying drawings, but it goes without saying that the present invention is not limited to such examples. Various shapes, combinations, and the like of the constituent members shown in the above-described examples are examples, and various modifications can be made based on design requirements and the like without departing from the gist of the present invention.

１Ａ，１Ｂ…半導体装置、２…半導体チップ、４…収容ケース、４１…放熱板（底壁板部）、４３…凹部、６…接続端子、７…熱伝導層、８…蓋材、８ａ…貫通孔、９…封止層   DESCRIPTION OF SYMBOLS 1A, 1B ... Semiconductor device, 2 ... Semiconductor chip, 4 ... Housing case, 41 ... Heat sink (bottom wall board part), 43 ... Recessed part, 6 ... Connection terminal, 7 ... Thermal conduction layer, 8 ... Cover material, 8a ... Through hole, 9 ... sealing layer

Claims (9)

半導体チップと、
前記半導体チップを内部に収容する収容ケースと、
前記半導体チップの上面に一端が接続された接続端子と、
前記収容ケースの内部に充填されて前記半導体チップ及び前記接続端子を埋設する封止層と、
前記封止層の上部に、前記封止層の材料よりも高い伝熱性を有する材料を用いて設けられ、前記接続端子と熱的に接続された蓋材と、を有することを特徴とする半導体装置。 A semiconductor chip;
A housing case for housing the semiconductor chip;
A connection terminal having one end connected to the upper surface of the semiconductor chip;
A sealing layer filled in the housing case and embedded in the semiconductor chip and the connection terminal;
A semiconductor comprising: a lid member provided on a top portion of the sealing layer using a material having higher heat conductivity than the material of the sealing layer and thermally connected to the connection terminal. apparatus. 前記接続端子と前記蓋材との間に両者に当接して設けられた絶縁性を有する熱伝導層を有することを特徴とする請求項１に記載の半導体装置。   The semiconductor device according to claim 1, further comprising an insulating heat conductive layer provided in contact with the connection terminal and the lid member. 前記接続端子が帯状であり、前記熱伝導層と帯面で当接していることを特徴とする請求項２に記載の半導体装置。   The semiconductor device according to claim 2, wherein the connection terminal has a band shape and is in contact with the heat conductive layer at a band surface. 前記接続端子を複数有し、
前記熱伝導層は、前記複数の接続端子にまたがって当接していることを特徴とする請求項２または３に記載の半導体装置。 A plurality of the connection terminals;
The semiconductor device according to claim 2, wherein the heat conductive layer is in contact with the plurality of connection terminals. 前記収容ケースの内壁に凹部が設けられ、前記蓋材が前記凹部に嵌合していることを特徴とする請求項１から４のいずれか１項に記載の半導体装置。   5. The semiconductor device according to claim 1, wherein a recess is provided in an inner wall of the housing case, and the lid member is fitted in the recess. 高さ方向に湾曲または屈曲した前記接続端子を複数有し、
湾曲または屈曲した各接続端子の高さ方向の頂点位置が、いずれも等しいことを特徴とする請求項１から５のいずれか１項に記載の半導体装置。 A plurality of the connection terminals curved or bent in the height direction;
6. The semiconductor device according to claim 1, wherein the vertex positions in the height direction of the respective connection terminals that are bent or bent are equal. 前記収容ケースは、前記半導体チップを配置する面の下側に放熱板を有することを特徴とする請求項１から６のいずれか１項に記載の半導体装置。   7. The semiconductor device according to claim 1, wherein the housing case includes a heat radiating plate below a surface on which the semiconductor chip is disposed. 収容ケース内に半導体チップを収容した半導体装置の製造方法であって、
一端が前記半導体チップ上にハンダ付けされた接続端子に、絶縁性を有する形成材料を用いて前記接続端子に当接した熱伝導層を設ける工程と、
貫通孔を有する蓋材を、前記貫通孔が前記熱伝導層と平面的に重ならない位置となるように前記熱伝導層の上部に当接させて配置する工程と、
前記貫通孔を介して、前記収容ケースと前記蓋材とに囲まれた空間に封止材を充填する工程と、を有することを特徴とする半導体装置の製造方法。 A method for manufacturing a semiconductor device in which a semiconductor chip is housed in a housing case,
A step of providing a heat conductive layer in contact with the connection terminal using a forming material having insulation on the connection terminal soldered on the semiconductor chip at one end;
A step of placing a lid member having a through hole in contact with the upper portion of the heat conductive layer so that the through hole does not overlap the heat conductive layer in a plane;
Filling the space surrounded by the housing case and the lid material with the sealing material through the through hole. A method for manufacturing a semiconductor device, comprising: 前記収容ケースは、内壁に凹部が設けられ、
前記蓋材を配置する工程では、前記凹部に前記蓋材を嵌合させることを特徴とする請求項８に記載の半導体装置の製造方法。 The housing case is provided with a recess in the inner wall,
The method for manufacturing a semiconductor device according to claim 8, wherein in the step of arranging the lid member, the lid member is fitted into the recess.
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