JP2008166333A - Semiconductor device and its manufacturing method - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To prevent current from flowing in an internal circuit due to electrostatic induction of static electricity, in a double-sided heat dissipation type semiconductor device. <P>SOLUTION: Conductor layers 21b and 22b with conductivity are fitted to surfaces exposing from a mold resin 80 in insulation layers 21a and 22a that are respectively provided on the outer surfaces of both heat slingers 21 and 22. The conductor layer 21b on one heat slinger 21 and the conductor layer 22b on the other heat slinger 22 are electrically connected with each other by a connection member 25 with conductivity. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention relates to a semiconductor device in which a pair of heat sinks incorporating an insulating layer are opposed to each other, a semiconductor element interposed between the inner surfaces of these heat sinks is sealed with a mold resin, and heat is released from each heat sink. The present invention relates to a so-called double-sided heat radiation type semiconductor device and a manufacturing method thereof.

Conventionally, this type of double-sided heat dissipation type semiconductor device generally includes a semiconductor element and a pair of heat sinks disposed on both sides of the semiconductor element so as to sandwich the semiconductor element and electrically and thermally connected to the semiconductor element. And a semiconductor resin and a mold resin for sealing both heat sinks, and an insulating layer having electrical insulation is provided on each outer surface of both heat sinks, and the insulating layer is exposed from the mold resin. (For example, refer to Patent Document 1).
JP 2006-93733 A

  By the way, such a semiconductor device is applied to, for example, an inverter of a vehicle, but in recent years, with the spread of EHV vehicles, there has been an increasing demand for cost reduction and miniaturization of the inverter.

  When an inverter is constituted by this type of semiconductor device, an electrically insulating grease such as silicone grease is applied to the insulating layer provided on the outer surface of the heat radiating plate, that is, the heat radiating surface, and is brought into contact with the cooling device through this. There are many cases.

  Such grease is applied by printing or brushing and involves friction. Therefore, in the grease application process, charges are likely to accumulate on the heat dissipation surface. Therefore, when applying grease, it is inevitable that static electricity is applied to the internal circuit from both heat radiation surfaces.

  In particular, in the case of a configuration in which an insulating layer is provided on the heat radiating surface of the heat radiating plate, electric charges are likely to accumulate on the heat radiating surfaces on the front and back sides, and internal circuits including semiconductor elements are also induced by electrostatic induction via stray capacitance of the insulating layer. Charge transfer occurs. Thus, when the voltage applied to the internal circuit exceeds the withstand voltage, the internal circuit may be destroyed.

  The present invention has been made in view of the above problems, and an object of the present invention is to prevent a current from flowing in an internal circuit due to electrostatic induction due to static electricity in a double-sided heat dissipation type semiconductor device.

  In order to achieve the above object, the present invention provides conductivity to the surfaces exposed from the mold resin (80) in the insulating layers (21a, 22a) provided on the outer surfaces of the two heat sinks (21, 22). A conductive layer (21b, 22b) is attached, and a conductive layer (21b) located on the side of one heat sink (21) and a conductive layer (22b) located on the side of the other heat sink (22) are made conductive. The first feature is that the connection is made via the connecting members (25, 26, 27).

  According to this, the insulating layers (21a, 22a) provided on the outer surfaces of the heat radiating plates (21, 22), that is, the heat radiating surfaces, are connected via the conductor layers (21b, 22b) and the connecting members (25-27). Since it becomes conductive and becomes equipotential, it is possible to prevent electrostatic induction from occurring in the internal circuit between the heat radiating plates (21, 22). Therefore, it is possible to prevent current from flowing through the internal circuit due to electrostatic induction due to static electricity. As a result, it is possible to prevent destruction of the internal circuit.

  Here, the conductor layers (21b, 22b) may be made of the same material as the heat radiation plate (21, 22) on the side where the conductor layers (21b, 22b) are provided.

  According to this, since the conductor layers (21b, 22b) and the heat sinks (21, 22) sandwiching the insulating layers (21a, 22a) are made of the same material, the insulating layers (21a, 22a) is preferable in preventing warpage.

  Further, in consideration of preventing warping of the insulating layers (21a, 22a), the conductor layers (21b, 22b) are replaced with the heat radiating plates (21, 22) on the side where the conductor layers (21b, 22b) are provided. The film thickness is preferably the same as the plate thickness. That is, it is more preferable that the conductor layers (21b, 22b) sandwiching the insulating layers (21a, 22a) and the heat sinks (21, 22) have the same thickness.

  Further, the conductor layers (21b, 22b) may be made of a coating film formed of a conductive paint, or may be made of a film formed by sputtering or vapor deposition.

  Also, the conductor layer (21b) located on the side of the one heat sink (21), the conductor layer (22b) located on the side of the other heat sink (22), and the connecting member (25) are connected to a single metal foil ( If it is configured by K), the connection configuration between the two conductor layers (21b, 22b) and the connection member (25) can be simplified (see FIG. 5 described later).

  Moreover, this metal foil (K) is made to oppose the both ends located in the both sides of the said intermediate part by bending an intermediate part, and between a semiconductor element (11, 12) and both heat sink ( 21 and 22) may be sandwiched. In this case, both end portions of the metal foil (K) are configured as conductor layers (21b, 22b) and attached to the insulating layers (21a, 22a), and the intermediate portion is configured as a connection member (25). It becomes.

  Further, the connecting member (26) has a shape in which the intermediate portion is bent so that the semiconductor element (11, 12) and the heat radiating plates (21, 22) are sandwiched between both ends facing each other. The connecting member (26) itself can be connected to the conductor layers (21b, 22b) by the elastic force of itself (see FIG. 7 described later).

  Further, the protruding portions (21c, 22c) projecting outward from the end surface (81) of the mold resin (80) located on the end surface side of the both heat radiation plates (21, 22) on the respective conductor layers (21b, 22b). ), The protrusions (21c, 22c) protrude in the same direction, and the protrusions (21c, 22c) may be inserted into the connection member (27) for connection. According to this, a general-purpose member can be used as the connection member (27) (see FIG. 8 described later).

  Further, in the semiconductor device provided with such protrusions (21c, 22c), it is further electrically connected to the semiconductor elements (11, 12) and a part thereof is located inside the mold resin (80). The remaining part may be provided with a terminal (60) protruding outside the mold resin (80).

  And when it has such a terminal (60), what protruded the protrusion part (21c, 22c) and the terminal (60) in each conductor layer (21b, 22b) in the same direction. It is good also as what protruded in the different direction.

  However, if they are projected in different directions, the creepage distance between the projecting portions (21c, 22c) and the terminals (60) can be easily increased as compared with the case of the same direction, and the insulation between them can be ensured. (Refer to FIG. 9 described later).

  Further, if a part of the connecting member (25) is embedded in the mold resin (80), it is advantageous for protecting the connecting member (25) and reducing the size of the device (see FIG. 2 described later).

  The insulating layers (21a, 22a) may be made of ceramic, and the conductor layers (21b, 22b) may be made of a brazing material brazed to the insulating layers (21a, 22a).

  In addition, as a manufacturing method for manufacturing a semiconductor device in which the conductor layers (21b, 22b) and the connection member (25) of both the heat radiating plates (21, 22) are constituted by one metal foil (K), It can be something like

  That is, a pair of heat sinks (21, 22) are arranged on both sides of the semiconductor element (11, 12) so as to sandwich the semiconductor element (11, 12), and the outer surfaces of both heat sinks (21, 22) A workpiece (300) sealed with a mold resin (80) so as to be exposed is prepared, and insulated as a metal foil (K) to a portion configured as a conductor layer (21b, 22b) of the metal foil (K). The layer (21a, 22a) is prepared, and a portion of the metal foil (K) that is configured as the conductor layer (21b, 22b) is placed on the workpiece (300) via the insulating layer (21a, 22a). ) Are attached to the outer surfaces of the two heat sinks (21, 22) (see FIG. 6 described later).

  According to this, a semiconductor device constituted by the metal foil (K) can be easily manufactured.

  By the way, as described above, the current flowing through the internal circuit due to electrostatic induction due to static electricity is likely to occur when grease is applied when the semiconductor device is assembled to the cooling device. Therefore, it is considered that the connecting member may be removed from the semiconductor device after the semiconductor device is assembled to the cooling device.

  Considering this point, the present invention is a double-sided heat dissipation type semiconductor device in which the semiconductor element (11, 12) is electrically connected and a part thereof is located inside the mold resin (80), and the remainder is a mold. A terminal (60) protruding outside the resin (80) is provided, and a conductor is formed on the surface exposed from the mold resin (80) of each insulating layer (21a, 22a) provided on both the heat sinks (21, 22). Attach the layers (21b, 22b) and project outward from the end faces (81) of the mold resin (80) located on the end face sides of the heat sinks (21, 22) on the respective conductor layers (21b, 22b). Projecting parts (21c, 22c) are provided, the projecting parts (21c, 22c) and the terminals (60) are projected in the same direction, and the terminals (60) and the projecting parts (21c, 22c) are connected to each other. Terminal (60) Preliminary protrusions (21c, 22c) that it has detachable from the connecting member for electrically connecting with each other (27), a second feature (see Figure 10 below).

  According to this, since the protrusions (21c, 22c) and the terminals (60) in the respective conductor layers (21b, 22b) protrude in the same direction, these protrusions (21c, 22c) and the terminals (60 3) can be easily attached to the detachable connecting member (27).

  In this case, if the protrusions (21c, 22c) and the terminal (60) are attached to the connection member (27) and electrically connected thereto, the static electricity due to static electricity is obtained as in the semiconductor device having the first feature. It is possible to prevent a current from flowing through the internal circuit by electric induction.

  In addition, the code | symbol in the bracket | parenthesis of each means described in the claim and this column is an example which shows a corresponding relationship with the specific means as described in embodiment mentioned later.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other are given the same reference numerals in the drawings in order to simplify the description.

(First embodiment)
FIG. 1 is a diagram showing a schematic plan configuration of a semiconductor device 100 according to the first embodiment of the present invention. Moreover, FIG. 2 is a figure which shows schematic sectional structure along the AA dashed-dotted line in FIG.

  As shown in FIGS. 1 and 2, the semiconductor device 100 according to the present embodiment includes a pair of semiconductor elements 11 and 12 disposed on both surfaces of the semiconductor elements 11 and 12 so as to sandwich the semiconductor elements 11 and 12. Heat sinks 21 and 22; insulating layers 21a and 22a provided on the outer surfaces of the heat sinks 21 and 22, that is, the heat dissipating surfaces; and the mold resin 80 that seals the semiconductor elements 11 and 12 and both heat sinks 21 and 22. It is configured with.

  Here, in the semiconductor device 100, the molding resin 80 is sealed so that the heat radiation surfaces of the pair of heat radiation plates 21 and 22 are exposed from the molding resin 80. The semiconductor elements 11 and 12 are sandwiched between the pair of heat sinks 21 and 22 via the terminals 41 and 42 and the conductive bonding members 51, 52, and 53.

  As shown in FIGS. 1 and 2, two semiconductor elements 11 and 12 are provided, that is, a first semiconductor element 11 and a second semiconductor element 12 arranged in parallel in a plane. That is, the two semiconductor elements 11 and 12 are sandwiched between the pair of heat sinks 21 and 22.

  In this example, two semiconductor elements 11 and 12 are provided. However, in the semiconductor device 100 of this embodiment, one semiconductor element may be sandwiched between the pair of heat sinks 21 and 22. It may be individual or more.

  In the case of this configuration, as shown in FIG. 2, the first semiconductor element 11 and the second semiconductor element 12 and the first heat radiating plate 21 are joined by the first conductive joining member 51. Yes. The two semiconductor elements 11, 12 and the terminals 41, 42 are joined by a second conductive joining member 52. Further, the terminals 41 and 42 and the second heat radiating plate 22 are joined by a third conductive joining member 53.

  Here, as the first, second, and third conductive bonding members 51, 52, and 53, solder, a conductive adhesive, or the like can be employed. Specifically, for example, Sn (tin) solder can be used as the first, second, and third conductive bonding members 51 to 53.

  Thus, in the above-described configuration, heat is radiated from the first conductive bonding member 51 through the first heat radiating plate 21 on the upper surface side of the first and second semiconductor elements 11 and 12, and the first On the lower surface side of the second semiconductor elements 11 and 12, heat is radiated through the second conductive bonding member 52, the terminals 41 and 42, the third conductive bonding member 53, and the second heat radiating plate 22. It has a configuration.

  And in the 1st heat sink 21, the upper surface in FIG. 2 is comprised as a heat radiating surface, and in the 2nd heat radiating plate 22, the lower surface in FIG. 2 is comprised as a heat radiating surface. Here, the heat radiating surface of each heat radiating plate 21, 22 is the widest surface, ie, the main surface, of the plate-shaped heat radiating plates 21, 22, and has a substantially rectangular shape, for example.

  Here, the first semiconductor element 11 and the second semiconductor element 12 are not particularly limited, and elements manufactured using a normal semiconductor manufacturing technique using a silicon semiconductor substrate or the like are employed. be able to.

  Specifically, in the present embodiment, the first semiconductor element 11 is composed of a power semiconductor element such as an IGBT (insulated gate bipolar transistor) or a thyristor, and the second semiconductor element 12 is FWD (free). Wheel diode). Further, the first and second semiconductor elements 11 and 12 can be formed into, for example, a rectangular thin plate shape.

  In addition, electrodes (not shown) are formed on the upper and lower surfaces of the first and second semiconductor elements 11 and 12 in FIG. This electrode is made of, for example, aluminum, titanium, nickel, gold, silver, copper, or the like, and is electrically connected to each of the conductive bonding members 51 and 52 on each surface.

  The electrodes on the upper surface side of the first and second semiconductor elements 11 and 12 are electrically connected to the first heat radiating plate 21 via the first conductive bonding member 51. The electrodes on the lower surfaces of the first and second semiconductor elements 11 and 12 are electrically connected to the terminals 41 and 42 via the second conductive bonding member 52.

  Further, the second heat radiating plate 22 and the terminals 41, 42 are electrically connected to each other on the surface of the terminals 41, 42 opposite to the surface on the semiconductor element 11, 12 side via the third conductive bonding member 53. It is connected. That is, in FIG. 2, the electrodes on the lower surfaces of the first and second semiconductor elements 11 and 12 are electrically connected to the second heat radiating plate 22 via the terminals 41 and 42.

  Here, both the heat sinks 21 and 22 and the terminals 41 and 42 are made of, for example, a metal having good heat conductivity and electrical conductivity such as Cu, Al, or a copper alloy or an aluminum alloy. Moreover, even if surface treatments, such as Ni plating and Au plating, for ensuring solderability are performed on the portions where the conductive bonding members 51 to 53 are disposed in these members 21, 22, 41, and 42. Good.

  The 1st heat sink 21 and the 2nd heat sink 22 of this embodiment are comprised as a substantially rectangular board material as a whole. The terminals 41 and 42 are provided corresponding to the semiconductor elements 11 and 12, respectively. As the terminals 41 and 42, for example, the terminals 41 and 42 are slightly smaller than the semiconductor elements 11 and 12, respectively. A rectangular plate having a size can be used.

  Here, the terminals 41, 42 are interposed between the semiconductor elements 11, 12 and the second heat radiating plate 22, thereby allowing the semiconductor elements 11, 12 and the second heat radiating plate 22 to be thermally and electrically connected. For the purpose of securing the height of the wire 70 when a bonding wire 70 to be described later is pulled out from the first semiconductor element 11 and the like, and the second heat radiating plate. 22 to ensure the height between the two.

  Moreover, although not shown in figure, in the 1st heat sink 21 and the 2nd heat sink 22, the terminal part electrically connected with the exterior is provided, respectively. These terminal portions are configured as, for example, a collector electrode which is a main electrode of the first semiconductor element 11, an extraction electrode of an emitter electrode, or the like.

  As described above, the first heat radiating plate 21 and the second heat radiating plate 22 are each configured as a metal body that doubles as an electrode and a heat radiating body, and in the semiconductor device 100 radiates heat from the semiconductor elements 11 and 12. It has a function to perform, and also has a function as an electrode of each semiconductor element 11 and 12.

  As shown in FIGS. 1 and 2, a signal terminal 60 is provided around the first semiconductor element 11 in the mold resin 80. The signal terminal 60 is made of a conductive material such as copper or 42 alloy, and is configured using, for example, a lead frame.

  As shown in FIG. 1, a plurality of signal terminals 60 are provided in this example, and a terminal or a reference terminal that conducts with a signal electrode (for example, a gate electrode) provided in the first semiconductor element 11. It will be.

  As shown in FIGS. 1 and 2, each signal terminal 60 and the first semiconductor element 11 are connected and electrically connected by the bonding wire 70 inside the mold resin 80. . The wire 70 is formed by wire bonding or the like and is made of gold, aluminum, or the like.

  Thus, each signal terminal 60 is electrically connected to the first semiconductor element 11 at the inner lead portion located in the mold resin 80 and at the outer lead portion protruding outside the mold resin 80. It can be electrically connected to an external circuit.

  Furthermore, in the semiconductor device 100 of the present embodiment, almost the entire device 100 is molded and sealed with the mold resin 80. Specifically, as shown in FIGS. 1 and 2, the mold resin 80 is filled and sealed in the gap between the pair of heat sinks 21 and 22 and the peripheral portions of the semiconductor elements 11 and 12 and the terminals 41 and 42. Has been.

  As described above, the heat radiation surfaces of the pair of heat radiation plates 21 and 22 are exposed from the mold resin 80. As the mold resin 80, for example, a normal mold material such as an epoxy resin can be employed. Moreover, when sealing the heat sinks 21, 22 and the like with the mold resin 80, a mold can be used and the transfer plate method can be used.

  Furthermore, in the semiconductor device 100, the first insulating layer 21 a is provided on the heat radiating surface that is the outer surface of the first heat radiating plate 21, and the heat radiating surface that is the outer surface of the second heat radiating plate 22 is Two insulating layers 22a are provided.

  Both the insulating layers 21a and 22a have electrical insulation, and are specifically made of ceramic or resin. For example, examples of the ceramic include a sprayed film or a single plate made of a ceramic such as alumina, silicon nitride, or aluminum nitride. In addition, examples of the resin include resins such as epoxy and polyimide. Furthermore, in order to ensure thermal conductivity, these resins are used as a base material and a filler made of metal such as silver or carbon is filled. Resin etc. are mentioned.

  Moreover, the planar shape of each insulating layer 21a, 22a is, for example, a square that is slightly larger than the heat radiating surface of each heat radiating plate 21, 22. These insulating layers 21 a and 22 a are exposed from the mold resin 80.

  Furthermore, the first conductor layer 21b is attached to the outer surface of the first insulating layer 21a, that is, the surface exposed from the mold resin 80, and the outer surface of the second insulating layer 22a, that is, the surface exposed from the mold resin 80. The second conductor layer 22b is attached.

  Both the conductor layers 21b and 22b have conductivity, and are specifically made of a metal plate such as Cu, Al, a copper alloy or an aluminum alloy, a metal foil, or the like. The planar shape of each of the conductor layers 21b and 22b is not particularly limited. The conductor layers 21 b and 22 b are exposed from the mold resin 80.

  Here, between the 1st heat sink 21, the 1st insulating layer 21a, and the 1st conductor layer 21b, and the 2nd heat sink 22, the 2nd insulating layer 22a, and the 2nd conductor layer 22b The space between them is joined and fixed by brazing or an adhesive. In addition, between these, you may be fixed in the form which only touches each other by pressing each other's member.

  Further, for each insulating layer 21a, 22a and conductor layers 21b, 22b, when the insulating layers 21a, 22a are made of the above-mentioned ceramic, the conductor layers 21b, 22b are made of metallization, that is, the insulating layers 21a, It may be made of a brazing material made of a general metal brazed to 22a, particularly a brazing material made of an active metal such as titanium.

  Further, when the insulating layers 21a and 22a are made of resin, the insulating layers 21a and 22a and the conductor layers 21b and 22b made of metal are integrally formed so that both of them are assembled. Good.

  Furthermore, the conductor layers 21b and 22b may be coating films formed of conductive paint. Specifically, such a coating film can be formed by applying and curing a paste obtained by mixing a metal powder with a resin, such as a silver paste. Further, the conductor layers 21b and 22b may be films made of Cu, Au, Al, or the like formed by sputtering or vapor deposition.

  In the semiconductor device 100 of this embodiment, as shown in FIGS. 1 and 2, the first conductor layer 21 b located on the first heat sink 21 side and the second heat sink 22 side are located. The second conductor layer 22b is electrically connected through a connection member 25 as a conductive connection member.

  Here, the connection member 25 is formed by bending a metal plate such as Cu or Al into a substantially U shape, and one end of the connection member 25 and the first conductor layer 21b are electrically and mechanically connected. The other end of the connection member 25 and the second conductor layer 22b are electrically and mechanically connected. Here, the connection between the connection member 25 and each of the conductor layers 21b and 22b is performed by solder, conductive adhesive, welding, or the like (not shown).

  As shown in FIGS. 1 and 2, in the present embodiment, a part of the connection member 25 is embedded in the mold resin 80. Specifically, the part located between the both ends of the connecting member 25 is embedded in the part of the mold resin 80 located on the opposite side of the signal terminal 60 on the end faces of the heat radiation plates 21 and 22. .

  A method for manufacturing such a semiconductor device 100 will be described. First, the first insulating layer 21a, the first conductor layer 21b, the second insulating layer 22a, and the second conductor layer are formed on the heat radiating surface of the first heat radiating plate 21 and the heat radiating surface of the second heat radiating plate 22, respectively. 22b is attached.

  Then, the semiconductor elements 11 and 12 and the terminals 41 and 42 are soldered to the first heat radiating plate 21. Subsequently, the first semiconductor element 11 and the signal terminal 60 are wire-bonded, and then the second heat radiating plate 22 is soldered to the terminals 41 and 42.

  Thereafter, the first conductor layer 21 b and the second conductor layer 22 b are connected by the connection member 25. Thereafter, the mold resin 80 is filled in the gaps, outer peripheral portions, and the like of both heat radiation plates 21 and 22 by a transfer molding method. Thereby, as shown in FIG. 1 and FIG. 2, the gaps and outer peripheral portions of both the heat radiating plates 21 and 22, and a part of the connection member 25 are sealed with the mold resin 80.

  Thus, the semiconductor device 100 described above is completed. The semiconductor device 100 is applied to, for example, a vehicle inverter. In this case, like the general semiconductor device of this type, it is attached to the cooling device via electrically insulating grease.

  FIG. 3 is a schematic cross-sectional view showing a state in which the semiconductor device 100 is attached to the cooling device 200. In the semiconductor device 100 of the present embodiment, the electrically insulating grease 210 made of silicone grease or the like is applied to the outside of the respective conductor layers 21b and 22b, and the cooling device 200 is brought into contact with the outside through this. . In this cooling device 200, for example, cooling water flows inside, and the heat from the semiconductor device 100 is effectively radiated.

  Therefore, in this embodiment, in the application process of the grease 210, electric charges are likely to accumulate on the heat radiating surfaces of both the heat radiating plates 21 and 22. However, in this embodiment, as a countermeasure, in the double-sided heat dissipation type semiconductor device 100, the conductor layers 21b and 22b are attached to the outside of the insulating layers 21a and 22a provided on the heat dissipation plates 21 and 22, Both the conductor layers 21 b and 22 b are electrically connected via the connection member 25.

  Here, FIG. 4 is a diagram showing an equivalent circuit of the semiconductor device 100 of the present embodiment. Here, the first semiconductor element 11 is an IGBT, and the second semiconductor element 12 is an FWD. The insulating layers 21a and 22a, the heat sinks 21 and 22 and the conductor layers 21b and 22b sandwiching the insulating layers 21a and 22a constitute capacitors C1 and C2, respectively, and the semiconductor elements 11 and 12 constitute an internal circuit. .

  In this embodiment, the insulating layers 21a and 22a provided on the heat radiation surfaces of the heat radiation plates 21 and 22 are electrically connected to each other through the conductor layers 21b and 22b and the connection member 25 to be equipotential. . Thereby, it is possible to prevent electrostatic induction from occurring in the internal circuit constituted by the semiconductor elements 11 and 12 between the heat radiation plates 21 and 22.

  Thus, according to the present embodiment, since the static electricity is shielded by setting the surface potential of the heat dissipation surface of the semiconductor device 100 to the same potential on the front and back surfaces, the internal circuit is connected to the internal circuit by electrostatic induction due to static electricity. It is possible to prevent a current from flowing. As a result, it is possible to prevent the internal circuit of the semiconductor device 100 from being destroyed.

  Further, in the conventional semiconductor device, it is necessary to perform grounding on each of the heat radiating surfaces of both heat radiating plates as a countermeasure against electrification, and the measures for that are complicated and problematic. However, in this embodiment, since the conductor layers 21b and 22b of both the heat radiating plates 21 and 22 are electrically connected by the connecting member 25, if both the heat radiating plates 21 and 22 are collectively connected if they are grounded via the connecting member 25. It is easy to take antistatic measures.

  Further, as described above, in order to produce an effect of shielding static electricity to the internal circuit, the signal terminal 60 and the terminal portions of the heat sinks 21 and 22 (not shown) do not need to be directly grounded. Processing such as bending the terminals is not necessary.

  Further, when the semiconductor device 100 is used with air cooling, static electricity is generated by the passage of dry air, and there is a concern about destruction of the internal circuit due to the static electricity. A similar shielding effect is exhibited.

  In addition, since the semiconductor device 100 of this embodiment has a structure in which static electricity is shielded by the connection member 25 as described above, in addition to the application process of the grease 210 described above, static electricity generated during use or storage can be prevented. However, the same effect is exhibited.

  Further, as described above, the heat sinks 21 and 22 and the conductor layers 21b and 22b can be made of the various metals described above. In particular, in this configuration, the first conductor layer 21b and the first heat sinks 21 are connected to each other. It is preferable that the second conductor layer 22b and the second heat radiation plate 22 are made of the same material.

  For example, when the conductor layers 21b and 22b and the heat sinks 21 and 22 facing each other with the insulating layers 21a and 22a interposed therebetween are made of different materials, when the temperature change occurs, the conductor layers 21b and 22b and the heat sink 21 and Since the degree of thermal expansion / contraction is different from that of the insulating layer 22, the insulating layers 21 a and 22 a located therebetween are likely to warp.

  In that respect, as in the above preferred configuration, the conductor layers 21b and 22b sandwiching the insulating layers 21a and 22a and the heat sinks 21 and 22 are made of the same material, for example, both are made of Cu. In this case, the degree of thermal expansion / contraction between the conductor layers 21b and 22b and the heat sinks 21 and 22 is approximately the same. Therefore, it is possible to prevent the insulating layers 21a and 22a from warping due to a temperature change or the like.

  Further, for example, the heat sinks 21 and 22 have a thickness of about 1 to 2 mm. However, in consideration of preventing the warping of the insulating layers 21a and 22a as described above, the insulating layers 21a and 22a are sandwiched. More preferably, the conductor layers 21b and 22b and the heat sinks 21 and 22 have the same thickness.

  That is, it is preferable that the first conductor layer 21b and the first heat dissipation plates 21 are configured with the same thickness, and the second conductor layer 22b and the second heat dissipation plates 22 are configured with the same thickness. Compared with the case where the conductor layers 21b and 22b and the heat sinks 21 and 22 have different thicknesses, the conductor layers 21b and 22b and the heat sinks 21 and 22 cause thermal expansion and contraction when the temperature changes. This is because the degree can be made closer to the same level.

  Further, in this embodiment, since a part of the connection member 25 is embedded in the mold resin 80, the connection member 25 can be protected by the mold resin 80, and the semiconductor device 100 can be reduced in size. . Further, by embedding a part of the connection member 25 in the mold resin 80, it is possible to easily ensure a creepage distance so as not to be short-circuited with other terminal portions exposed from the mold resin 80 in the semiconductor device 100.

(Second Embodiment)
FIG. 5 is a diagram showing a schematic cross-sectional configuration of a semiconductor device 101 according to the second embodiment of the present invention. In the first embodiment, the connecting member 25 and the conductor layers 21b and 22b are separate, but in the present embodiment, they are configured by a single metal foil K. Yes, we will focus on this difference below.

  As FIG. 5 shows, the 1st conductor layer 21b located in the 1st heat sink 21 side, the 2nd conductor layer 22b located in the 2nd heat sink 22 side, and the connection member 25 are one sheet. Of the metal foil K.

  Specifically, the metal foil K is made of a foil such as Cu or Al, and is substantially U-shaped in which both end portions 21b and 22b located on both sides of the intermediate portion 25 are opposed to each other by bending the intermediate portion 25. It has a bent shape.

  The mold resin 80 is wrapped from the surface on the first insulating layer 21 a side to the surface on the second insulating layer 22 a side in the mold resin 80. As a result, the metal foil K sandwiches the semiconductor elements 11 and 12 and the two heat sinks 21 and 22 between the opposite end portions 21b and 22b.

  And both ends 21b and 22b of metal foil K are constituted as conductor layers 21b and 22b, respectively, and are attached to insulating layers 21a and 22a. The attachment method of the conductor layers 21b and 22b and the insulating layers 21a and 22a of the metal foil K is performed by brazing, bonding, contact, or the like as in the above embodiment.

  Further, an intermediate portion 25 that is a bent portion of the metal foil K is configured as a connecting member 25. The planar shape of the conductor layers 21b, 22b and the connection member 25 in the metal foil K can be the same as that obtained by integrally connecting the conductor layers 21b, 22b and the connection member 25 shown in FIG.

  Further, in the semiconductor device 101 shown in FIG. 5, a part of the connection member 25 is not sealed with the mold resin 80, and the entire connection member 25 and thus the entire metal foil K are exposed from the mold resin 80. ing.

  Next, a method for manufacturing the semiconductor device 101 of this embodiment will be described with reference to FIG. FIG. 6 is a process diagram illustrating an example of a method for manufacturing the semiconductor device 101.

  First, the semiconductor elements 11 and 12 are soldered by being sandwiched between the pair of heat sinks 21 and 22 via the terminals 41 and 42, and wire bonding is performed between the signal terminal 60 and the first semiconductor element 11. And this thing is sealed with the mold resin 80 so that each outer surface of both the heat sinks 21 and 22 is exposed, and the workpiece | work 300 as shown in FIG.6 (b) is produced.

  On the other hand, as shown in FIG. 6A, the metal foil K is manufactured by attaching the insulating layers 21a and 22a to portions of the metal foil K that are configured as the conductor layers 21b and 22b. In this case, the metal foil K and the insulating layers 21a and 22a are attached by brazing or using an adhesive.

  Next, using the workpiece 300 and the metal foil K thus manufactured, as shown in FIG. 6B, the portions configured as the conductor layers 21b and 22b in the metal foil K are changed into the insulating layers 21a and 22a. Then, the heat radiation plates 21 and 22 of the workpiece 300 are attached to the outer surfaces, that is, the heat radiation surfaces. Also here, the insulating layers 21a, 22a and the heat radiating surface are attached by an adhesive or the like.

  Thus, the semiconductor device 101 of this embodiment shown in FIG. 5 is completed. Thus, according to the present embodiment, both the conductor layers 21b, 22b and the connection member 25 are integrated in advance, and it is unnecessary to connect both of them, so that the assembly can be simplified. As shown in FIG. 6, the semiconductor device 101 can be easily manufactured.

  In the example shown in FIG. 6, the semiconductor device 101 is manufactured by sandwiching the workpiece 300 using the metal foil K on which the insulating layers 21 a and 22 a are pasted. The semiconductor device 101 has the following structure. It may be produced in this way.

  For example, a workpiece in which the insulating layers 21a and 22a are assembled in advance as a workpiece is manufactured. Such a workpiece corresponds to a workpiece obtained by further attaching insulating layers 21a and 22a to the workpiece 300 shown in FIG. Then, by using only the metal foil K, the semiconductor device 101 is manufactured by sandwiching the workpiece in the same manner as the method of FIG.

  In this case, the metal foil K may be attached to the insulating layers 21a and 22a by adhesion, but may be performed by simple contact, that is, pressing using plastic deformation of the metal foil K itself. This is a simple assembly method, for example, by using a general-purpose aluminum foil as the metal foil K and lapping the workpiece.

  As another method, the conductor layers 21b and 22b connected via the connecting member 25 are joined to one surface of the insulating layers 21a and 22a by brazing or the like, and the heat sinks 21 and 22 are connected to the insulating layers 21a and 22a. Prepare the parts joined to the surface. Both elements 11 and 12 are mounted on the heat dissipation plate 21 via the conductive bonding member 51, and the terminals 41 and 42 and the conductive bonding member 53 are mounted via the conductive bonding member 52, respectively, and reflow bonding is performed. Thereafter, the element 11 and the signal terminal 60 are connected by wire bonding. And it folds in the intermediate part of the connection member 25 so that the heat sinks 22 and 21 face each other, pinches the terminals 41 and 42 and the both elements 11 and 12, and performs reflow joining. Finally, the conductive layers 21 b and 22 b are molded so as to be exposed and sealed with a mold resin 80.

  As described above, in the semiconductor device 101 of the present embodiment, the connection member 25 and the conductor layers 21b and 22b are integrally formed of one metal foil K, and the connection member 25 is made of the mold resin 80. Except that it is not sealed, it is the same as that of the first embodiment, and the effect thereof is also the same.

  Also in this embodiment, for example, a workpiece 300 shown in FIG. 6 that is not sealed with the mold resin 80 is manufactured, and after the metal foil K is attached thereto, Sealing may be performed. Thereby, also in the present embodiment, a configuration in which a part of the connection member 25 in the metal foil K is sealed with the mold resin 80 may be realized.

(Third embodiment)
FIG. 7 is a diagram showing a schematic cross-sectional configuration of a semiconductor device 102 according to the third embodiment of the present invention. The present embodiment employs a clip 26 that can be attached to and detached from the semiconductor device 102 as the connection member 26. This is a difference from the first embodiment, and this difference will be mainly described below.

  As shown in FIG. 7, two clips 26 as connection members in the semiconductor device 102 are attached to both ends of the mold resin 80. One clip 26 may be provided.

  The clip 26 has a shape in which an intermediate portion is bent so that the semiconductor elements 11 and 12 and the two heat radiation plates 21 and 22 are sandwiched between both end portions facing each other. In this embodiment, the clip 26 is formed by bending a conductive metal plate material having spring elasticity such as stainless steel or Cu into a substantially U shape.

  The clip 26 sandwiches the mold resin 80 in its thickness direction by its own elastic force, and both ends of the clip 26 are connected to the conductor layers 21b and 22b.

  Here, the conductor layers 21b and 22b protrude beyond the insulating layers 21a and 22a to the end face side of the mold resin 80, and both ends of the clip 26 are connected at the protruding portions. And the attachment method of the clip 26 and the conductor layers 21b and 22b is made | formed by the contact using the press by the said elastic force, The clip 26 can be attached and detached with respect to the conductor layers 21b and 22b by this elastic force. It has become.

  Thus, also in the semiconductor device 102 of this embodiment, since both the conductor layers 21b and 22b are electrically connected via the clip 26 as a connection member, It is possible to prevent current from flowing through the internal circuit due to electrostatic induction caused by static electricity. And in this embodiment, since the clip 26 which can be attached or detached with an elastic force is used as a connection member, attachment of a connection member is easy.

  Such a semiconductor device 102 according to the present embodiment can be easily manufactured by attaching the clip 26 to the work attached to the conductor layers 21b and 22b and sealed with the mold resin 80.

  Also in this embodiment, for example, the clip 26 is connected to the work before sealing with the mold resin 80, and a part of the clip 26 is also sealed with the mold resin 80 at the time of resin sealing. Thus, a configuration in which a part of the clip 26 is sealed with the mold resin 80 may be realized.

  In FIG. 7, both ends of the clip 26 are connected at the protruding portions of the conductor layers 21b and 22b from the insulating layers 21a and 22a. However, the conductor layers 21b and 22b are within the range of the insulating layers 21a and 22a. The clip 26 may be connected at the portions of the insulating layers 21a and 22a.

(Fourth embodiment)
FIG. 8 is a diagram showing a schematic cross-sectional configuration of a semiconductor device 103 according to the fourth embodiment of the present invention. Hereinafter, the difference from the first embodiment will be mainly described.

  As shown in FIG. 8, in the semiconductor device 103 of the present embodiment, the conductor layers 21 b and 22 b are outward from the end face 81 of the mold resin 80 located on the end face sides of the heat radiation plates 21 and 22. The projecting portions 21c and 22c projecting from each other are integrally provided.

  These protrusions 21c and 22c protrude from the plate-like conductor layers 21b and 22b in a bar shape, respectively. Then, the protruding portions 21 c and 22 c in the respective conductor layers 21 b and 22 b are inserted into the connection member 27.

  Here, the connection member 27 is made of a conductive sponge 27 having conductivity. The conductive sponge 27 is a generally known general-purpose member, and is a sponge-like material made of a material in which a conductive material such as metal powder or carbon is kneaded. The projecting portions 21 c and 22 c in the conductor layers 21 b and 22 b are inserted into the conductive sponge 27, whereby the projecting portions 21 c and 22 c are electrically connected by the conductive sponge 27.

  Moreover, in this embodiment, as FIG. 8 shows, the protrusion direction from the mold resin 80 of the signal terminal 60 and the protrusion direction of protrusion part 21c, 22c in each conductor layer 21b, 22b are the same directions. It is.

  Therefore, in the conductive sponge 27, an opening 27 a is provided at a portion corresponding to the signal terminal 60 so that the outer lead portion of the signal terminal 60 protruding from the mold resin 80 does not contact the conductive sponge 27. The signal terminal 60 can be electrically connected to the outside through the opening 27a. The conductive sponge 27 may have a shape that does not interfere with the signal terminal 60 other than the configuration in which the opening 27a is provided.

  Thus, also in this embodiment, since both the conductor layers 21b and 22b are electrically connected through the conductive sponge 27 as a connecting member, static electricity due to static electricity is provided as in the first embodiment. Current can be prevented from flowing through the internal circuit by electrical induction.

  In the present embodiment, since the projecting portions 21c and 22c in the two conductor layers 21b and 22b are projected in the same direction, a general-purpose conductive sponge 27 is applied as a connecting member, so that electrical Connections can be made. Here, the same general-purpose connection member may be a connector that can be connected by insertion.

(Fifth embodiment)
FIG. 9 is a diagram showing a schematic cross-sectional configuration of a semiconductor device 104 according to the fifth embodiment of the present invention. This embodiment is obtained by changing the directions of the protruding portions 21c and 22c in the fourth embodiment.

  As shown in FIG. 9, in the semiconductor device 104 of the present embodiment, the protruding direction of the signal terminal 60 from the mold resin 80 and the protruding directions of the protruding portions 21 c and 22 c are different from each other. Here, both protruding directions are opposite to each other. The conductive sponge 27 into which the protruding portions 21 c and 22 c are inserted is also located on the side opposite to the signal terminal 60.

  In this case, compared with FIG. 8, there is almost no possibility that the outer lead portion of the signal terminal 60 and the conductive sponge 27 are in contact with each other. That is, in this embodiment, it is easy to attach the conductive sponge 27 to both the protruding portions 21 c and 22 c without interfering with the signal terminal 60. In this embodiment, the conductive sponge 27 does not need the opening 27a of the conductive sponge 27 as shown in FIG.

  Further, as in the present embodiment, when the protruding direction of the outer lead of the signal terminal 60 and the protruding direction of both protruding portions 21c and 22c are different from each other, the protruding portion 21c is compared to the case of the same direction described above. , 22c and the signal terminal 60 are easy to increase the creepage distance, which is preferable in terms of ensuring the insulation between them. Also in this embodiment, the connection member may be a general-purpose connector that can be connected by insertion.

(Sixth embodiment)
FIG. 10 is a diagram showing a schematic cross-sectional configuration of a semiconductor device 105 according to the sixth embodiment of the present invention.

  The configuration shown in FIG. 10 is similar to the configuration shown in FIG. 8 described above, in which both the conductor layers 21b and 22b are provided with projections 21c and 22c that project outward from the end surface 81 of the mold resin 80. 21c and 22c and the signal terminal 60 are made to protrude in the same direction.

  However, in the present embodiment, unlike the configuration shown in FIG. 8, the outer lead portion of the signal terminal 60 is also inserted into the conductive sponge 27 without providing the opening 27 a in the conductive sponge 27.

  As described above, the current flowing through the internal circuit due to electrostatic induction due to static electricity is likely to occur during the application of the grease 210 when the semiconductor device is assembled to the cooling device. Therefore, if both conductor layers are electrically connected by the connection member in the semiconductor device at the time of assembly, the effect is exhibited. After the semiconductor device is assembled to the cooling device, the connection member is removed. Is also considered good.

  Therefore, in the present embodiment, in the state shown in FIG. 10, the semiconductor device 105 is assembled to the cooling device in the same manner as in the first embodiment, and thereafter, the conductive sponge 27 is removed. The conductive sponge 27 can be attached simply by inserting it into both the protruding portions 21c, 22c and the signal terminal 60, and can be removed by pulling it out.

  That is, in the semiconductor device 105 of the present embodiment, the signal terminal 60 and the both projecting portions 21c and 22c are detachable from the conductive sponge 27, and the semiconductor device 105 itself has the conductive sponge 27 removed. That is, the conductive sponge 27 is omitted in FIG.

  In the semiconductor device 105 of the present embodiment, both the protruding portions 21c and 22c and the signal terminal 60 are protruded in the same direction. Therefore, the both protruding portions 21c and 22c and the signal terminal 60 are inserted into the conductive sponge 27. Thus, it is easy to connect to the conductive sponge 27 at once.

  Then, if the conductive sponge 27 is assembled to the cooling device in a state where the projecting portions 21c and 22c and the signal terminal 60 are electrically connected, the internal portion is caused by electrostatic induction due to static electricity as in the above embodiment. It is possible to prevent a current from flowing through the circuit.

  In this case, when the semiconductor device 105 is stored, the internal circuit can be protected from electrical disturbance by grounding the protrusions 21c and 22c and the signal terminal 60.

  In addition to the conductive sponge 27, the connection member of the present embodiment may be a general-purpose connector that can be detachably connected by insertion, that is, insertion. Furthermore, the connecting member of the present embodiment is not particularly limited as long as it can be attached to and detached from the protruding portions 21c and 22c and the signal terminal 60 in addition to them.

  Considering this point, even in the semiconductor device of the third embodiment using the clip 26 (see FIG. 7), the clip 26 is a connecting member that can be attached to and detached from the conductor layers 21b and 22b. The clip 26 may be removed after the semiconductor device is assembled to the cooling device.

(Other embodiments)
In addition, the shape of the heat sinks 21 and 22 is not limited to the substantially rectangular plate shape described above, and may be a suitably modified design such as a triangular plate shape or a circular plate shape. Further, the semiconductor element is not limited to the power semiconductor element such as the above-described IGBT or thyristor, FWD, or the like.

  In addition, the connection member is not limited to that shown in the above-described embodiment, and electrically connects conductor layers provided on the outer side of the insulating layer provided on the outer side of each heat sink. Any shape may be used, and the shape, material, number, etc. may be changed as appropriate.

  Further, as described above, the terminals 41 and 42 are interposed between the semiconductor elements 11 and 12 and the second heat radiating plate 22, and are high between the first semiconductor element 11 and the second heat radiating plate 22. However, if possible, the terminals 41 and 42 may not exist in each of the above embodiments.

  For example, instead of the terminals 41 and 42, a convex portion that protrudes toward the semiconductor elements 11 and 12 may be provided in the second heat radiating plate 22, and the function of the terminals 41 and 42 may be substituted by this convex portion. Further, if it is not necessary to secure the heights of the semiconductor elements 11 and 12 and the second heat radiating plate 22, the terminals 41 and 42 may be simply omitted.

  The heat sinks 21 and 22 are generally considered to be heat sinks, but are not limited to this, and for example, the island portion of the lead frame may be configured as the heat sinks 21 and 22.

1 is a schematic plan view of a semiconductor device according to a first embodiment of the present invention. It is an AA schematic sectional drawing in FIG. It is a schematic sectional drawing which shows the state which assembled | attached the semiconductor device in FIG. 1 to the cooling device. It is a figure which shows the equivalent circuit of the semiconductor device in FIG. It is a schematic sectional drawing of the semiconductor device which concerns on 2nd Embodiment of this invention. FIG. 7 is a process diagram illustrating an example of a method for manufacturing the semiconductor device in FIG. 6. It is a schematic sectional drawing of the semiconductor device which concerns on 3rd Embodiment of this invention. It is a schematic sectional drawing of the semiconductor device which concerns on 4th Embodiment of this invention. It is a schematic sectional drawing of the semiconductor device which concerns on 5th Embodiment of this invention. It is a schematic sectional drawing of the semiconductor device which concerns on 6th Embodiment of this invention.

Explanation of symbols

DESCRIPTION OF SYMBOLS 11 ... 1st semiconductor element, 12 ... 2nd semiconductor element, 21 ... 1st heat sink,
21a ... 1st insulating layer, 21b ... 1st conductor layer, 21c ... Projection part of 1st conductor layer,
22 ... 2nd heat sink, 22a ... 2nd insulating layer, 22b ... 2nd conductor layer,
22c: a protruding portion of the second conductor layer, 25 ... a connecting member,
26 ... Clip as a connecting member, 27 ... Conductive sponge as a connecting member,
60 ... Signal terminal, 80 ... Mold resin, 81 ... End surface of mold resin,
300 ... work, K ... metal foil.

Claims (15)

A semiconductor element (11, 12);
A pair of heat sinks (21, 21) disposed on both sides of the semiconductor element (11, 12) so as to sandwich the semiconductor element (11, 12) and electrically and thermally connected to the semiconductor element (11, 12). 22)
A mold resin (80) for sealing the semiconductor element (11, 12) and the heat dissipation plates (21, 22);
Insulating layers (21a, 22a) having electrical insulating properties are provided on the outer surfaces of the heat radiating plates (21, 22), and the insulating layers (21a, 22a) are exposed from the mold resin (80). In the semiconductor device
Conductive conductor layers (21b, 22b) are attached to the surfaces of the insulating layers (21a, 22a) exposed from the mold resin (80),
The conductive layer (21b) located on one side of the heat radiating plate (21) and the conductive layer (22b) located on the side of the other radiating plate (22) are electrically connected to the connecting members (25, 26). , 27), and is electrically connected to the semiconductor device. The said conductor layer (21b, 22b) consists of the same material as the said heat sink (21, 22) of the side in which the said conductor layer (21b, 22b) is provided, The said Claim 1 characterized by the above-mentioned. Semiconductor device. The said conductor layer (21b, 22b) is the same film thickness as the plate | board thickness of the said heat sink (21, 22) in the side in which the said conductor layer (21b, 22b) is provided. Semiconductor device. The semiconductor device according to claim 1, wherein the conductor layers (21 b, 22 b) are a coating film formed of a conductive paint. The semiconductor device according to claim 1, wherein the conductor layers (21b, 22b) are films formed by sputtering or vapor deposition. The conductor layer (21b) located on the side of the one heat sink (21), the conductor layer (22b) located on the side of the other heat sink (22), and the connecting member (25) 2. The semiconductor device according to claim 1, wherein the semiconductor device is made of a metal foil (K). The metal foil (K) is formed by bending the intermediate portion so that both end portions located on both sides of the intermediate portion are opposed to each other, and the semiconductor element (11, 12) and both heat radiation plates ( 21 and 22) are sandwiched between them,
Each of the both end portions of the metal foil (K) is configured as the conductor layer (21b, 22b) and attached to the insulating layer (21a, 22a), and the intermediate portion is the connection member (25). The semiconductor device according to claim 6, wherein the semiconductor device is configured as follows. The connecting member (26) has a shape in which an intermediate portion is bent so that the semiconductor element (11, 12) and the heat radiating plates (21, 22) are sandwiched between both ends facing each other. ,
Each of the said both ends is connected to the said conductor layer (21b, 22b) by the elastic force of the said connection member (26) itself, The one of Claim 1 thru | or 5 characterized by the above-mentioned. Semiconductor device. Each of the conductor layers (21b, 22b) has a protruding portion (21c) protruding outward from the end surface (81) of the mold resin (80) located on the end surface side of the heat radiating plates (21, 22). 22c),
The protrusions (21c, 22c) in the respective conductor layers (21b, 22b) protrude in the same direction, and these protrusions (21c, 22c) are inserted into the connection member (27). The semiconductor device according to any one of claims 1 to 5, wherein the two conductor layers (21b, 22b) are electrically connected to each other. A terminal (60) is provided which is electrically connected to the semiconductor element (11, 12), partly located inside the mold resin (80) and the remaining part protruding outside the mold resin (80). And
10. The semiconductor device according to claim 9, wherein the protrusions (21 c, 22 c) and the terminals (60) in the respective conductor layers (21 b, 22 b) protrude in the same direction. 11. A terminal (60) is provided which is electrically connected to the semiconductor element (11, 12), partly located inside the mold resin (80) and the remaining part protruding outside the mold resin (80). And
The semiconductor device according to claim 9, wherein the projecting portions (21 c, 22 c) and the terminals (60) in the respective conductor layers (21 b, 22 b) project in different directions. 9. The semiconductor device according to claim 1, wherein a part of the connection member (25) is embedded in the mold resin (80). The insulating layers (21a, 22a) are made of ceramic, and the conductor layers (21b, 22b) are made of a brazing material brazed to the insulating layers (21a, 22a). The semiconductor device according to any one of the above. A semiconductor device manufacturing method for manufacturing the semiconductor device according to claim 6, wherein:
The pair of heat sinks (21, 22) are arranged on both sides of the semiconductor element (11, 12) so as to sandwich the semiconductor element (11, 12), and the heat sinks (21, 22) are respectively provided. While preparing a workpiece (300) sealed with the mold resin (80) so that the outer surface is exposed,
Prepare the metal foil (K) with the insulating layer (21a, 22a) attached to the portion of the metal foil (K) that is configured as the conductor layer (21b, 22b),
Parts of the metal foil (K) configured as the conductor layers (21b, 22b) are disposed on the heat radiating plates (21, 22) in the workpiece (300) via the insulating layers (21a, 22a). A method for manufacturing a semiconductor device, wherein the semiconductor device is attached to each outer surface of the semiconductor device. A semiconductor element (11, 12);
A pair of heat sinks (21, 21) disposed on both sides of the semiconductor element (11, 12) so as to sandwich the semiconductor element (11, 12) and electrically and thermally connected to the semiconductor element (11, 12). 22)
A mold resin (80) for sealing the semiconductor element (11, 12) and the heat dissipation plates (21, 22);
Insulating layers (21a, 22a) having electrical insulating properties are provided on the outer surfaces of the heat radiating plates (21, 22), and the insulating layers (21a, 22a) are exposed from the mold resin (80). In the semiconductor device
A terminal (60) is provided which is electrically connected to the semiconductor element (11, 12), partly located inside the mold resin (80) and the remaining part protruding outside the mold resin (80). And
Conductive conductive layers (21b, 22b) are attached to the surfaces of the insulating layers (21a, 22a) provided on the heat radiating plates (21, 22) exposed from the mold resin (80). And
Each of the conductor layers (21b, 22b) has a protruding portion (21c) protruding outward from the end surface (81) of the mold resin (80) located on the end surface side of the heat radiating plates (21, 22). 22c),
The protruding portions (21c, 22c) and the terminals (60) in the respective conductor layers (21b, 22b) protrude in the same direction,
The terminal (60) and the protrusions (21c, 22c) are attached to and detached from the connection member (27) for electrically connecting the terminal (60) and the protrusions (21c, 22c). A semiconductor device which is possible.

Images