JP5987665B2 - Semiconductor device - Google Patents

Description

  The present invention relates to a semiconductor device as a double-sided heat dissipation package in which a metal plate and a ceramic plate provided on only one side of a semiconductor element or both sides are sealed with a mold resin.

  Conventionally, this type of general semiconductor device sandwiches a semiconductor element between a pair of metal plates, and joins each surface of the front and back surfaces of the semiconductor element and each metal plate so as to be electrically and thermally conductive by solder or the like, Furthermore, an insulating member such as a ceramic plate or a sheet is provided on the outer surface of each metal plate, and these are sealed with a mold resin, and the outer surface of the insulating member is exposed from the mold resin as a heat radiating surface so as to dissipate heat. Yes.

  Here, in such a semiconductor device, a semiconductor element is sandwiched between metal plates to form a structure in which the metal plate, the semiconductor element, and the insulating member are laminated, and the structure is used as a mold for resin molding. It is manufactured by installing and molding a mold resin. At this time, simply, in order to expose each heat radiating surface from the mold resin, a mold is pressed against each heat radiating surface, and resin sealing is performed with the structure sandwiched between the molds.

  However, conventionally, since all of the structure is made of a material having a large Young's modulus (that is, high elasticity), when a mold resin molding is performed, if the heat radiation surface of the structure is pressed with a mold, the pressing is performed. Due to the force, problems such as damage to the semiconductor element, the solder connection part and the ceramic plate, and damage to the mold are likely to occur.

  Therefore, conventionally, in order to avoid such a problem, it is necessary to strictly control the height dimension of the structure (that is, the dimension in the stacking direction) so that one heat radiating surface of the structure does not contact the mold. there were. In addition, since the one heat radiating surface is not in contact with the mold, burrs of the mold resin are generated on the one heat radiating surface, and it is necessary to add a subsequent process such as polishing or deburring processing. .

  On the other hand, for the purpose of preventing the occurrence of resin burrs on the heat dissipation surface in resin molding, a structure in which a thin plate spring shape is formed between a metal plate and a semiconductor element and a copper material having spring properties is assembled has been proposed. (See Patent Document 1). According to this, since the metal plate is pressed against the inner surface of the mold by the spring force of the copper material, resin burrs are hardly generated.

JP 2008-227231 A

  However, when the copper material described in Patent Document 1 is used, in order for the copper material to have a spring property, the copper material needs to be a thin plate material. Therefore, heat dissipation through the copper material is deteriorated, and when the copper material is bent, a large stress is generated at the joint portion between the copper material and the semiconductor element, and there is a concern about the generation of cracks at the joint portion. Is done.

  Even in the case of a semiconductor device in which a metal plate and a ceramic plate are provided in the same manner as described above on one side of a semiconductor element and sealed with a mold resin, that is, a so-called single-sided heat dissipation structure, the mold is as in the case of both sides. Although the pressing force of the heat radiating surface is not large, there is a possibility that the same problem as described above may occur due to the pressing force.

  The present invention has been made in view of the above problems, and in a semiconductor device in which only one surface of a semiconductor element or a metal plate and a ceramic plate provided on both surfaces is sealed with a mold resin, the semiconductor The object is to provide a structure suitable for both preventing damage to elements, solder joints and ceramic plates and damage to molds for resin molding, and preventing generation of resin burrs on the heat dissipation surface. .

In order to achieve the above object, according to the first aspect of the present invention, the semiconductor element (10) in which the one surface (11) and the other surface (12) are in a front / back relationship, and one surface side and the other surface side of the semiconductor element A pair of metal plates (20, 30) that are joined so as to be electrically and thermally conductive and sandwich the semiconductor element, and an electrically insulating ceramic plate provided on the outer surface (21, 31) of each of the pair of metal plates (40, 50) and a mold resin (60) for sealing the semiconductor element, the pair of metal plates and the ceramic plate so that the outer surface (41, 51) of the ceramic plate is exposed from the mold resin. cage, at least part of the side surface located at the end of each ceramic plate (43, 53) is sealed by molding resin, on each side of the pair of metal plates, the plane support of the ceramic plate Figure slightly smaller than the planar size of the metal plate, the entire end of the ceramic plate is located at the inner end of the metal plate, the inner surface of the outer surface of the ceramic plate in each pair of metal plates (42, 52 ), Intervening layers (110, 120) softer than the metal plate and the ceramic plate are interposed.

According to this, in the structure in which the metal plate, the semiconductor element, and the ceramic plate are laminated, the outer surface of the ceramic plate becomes the heat dissipation surface. In molding the mold resin, resin burrs are prevented by pressing the molds (200) for resin molding against both heat radiating surfaces. The pressing force from the mold is a metal plate and a ceramic plate. Relieved by a softer intervening layer. Therefore, according to the present invention, suited to both the prevention of damage to damage and mold semiconductor device, solder joints or ceramic plate, and prevention of resin flash on the heat dissipation surface, the ceramic plate The structure which is easy to suppress peeling of mold resin in the side surface located in the edge part of can be provided.

  According to a second aspect of the present invention, in the semiconductor device of the first aspect, at least a part of the side surfaces (43, 53) located at the end of each ceramic plate is sealed with a mold resin, On each side of the metal plate, the planar size of the intervening layer is slightly smaller than the planar size of the ceramic plate, and the entire end of the intervening layer is located inside the end of the ceramic plate.

According to a third aspect of the present invention, in the semiconductor device according to any one of the first or second aspects, the intervening layer is made of a material having a glass transition point lower than the molding temperature of the molding resin. Features.

According to this, since the intervening layer softens at the molding temperature of the mold resin, the pressing force from the mold is more easily relaxed, which is preferable.

In the invention according to claim 4, the semiconductor element (10) in which the one surface (11) and the other surface (12) are in a front / back relationship , and the electrical and A pair of metal plates (20, 30) that are joined so as to conduct heat and sandwich the semiconductor element, and an electrically insulating ceramic plate (40, 50) provided on the outer surface (21, 31) of each of the pair of metal plates And a mold resin (60) for sealing so as to enclose the semiconductor element, the pair of metal plates and the ceramic plate, and the outer surfaces (41, 51) of the ceramic plate are exposed from the mold resin, An intervening layer (110, 120) softer than the metal plate and the ceramic plate is interposed between the outer surface of each of the plates and the inner surface (42, 52) of the ceramic plate. It is made of a material having a low glass transition point than the molding temperature and said.

Also in this case, the intervening layer softer than the metal plate and the ceramic plate achieves both the damage to the semiconductor element, the solder joint, the ceramic plate and the mold, and the prevention of the occurrence of resin burrs on the heat radiation surface. It is possible to provide a configuration suitable for the above. Moreover, since the intervening layer softens at the molding temperature of the mold resin, the pressing force from the mold is more easily relaxed, which is preferable.

Furthermore, in the invention according to claim 5, the semiconductor element (10) in which the one surface (11) and the other surface (12) are in a front-back relationship, and electrical and heat conduction can be performed only on the other surface side of the semiconductor element. The bonded metal plate (30), the electrically insulating ceramic plate (50) provided on the outer surface (31) of the metal plate, and the mold resin (encapsulating the semiconductor element, the metal plate and the ceramic plate so as to wrap 60), and the outer surface (51) of the ceramic plate is exposed from the mold resin, and is interposed between the outer surface of the metal plate and the inner surface (52) of the ceramic plate, which is softer than the metal plate and the ceramic plate. The layer (120) is interposed, and the interposed layer is made of a material having a glass transition point lower than the molding temperature of the mold resin.

Also in this case, the intervening layer softer than the metal plate and the ceramic plate achieves both the damage to the semiconductor element, the solder joint, the ceramic plate and the mold, and the prevention of the occurrence of resin burrs on the heat radiation surface. It is possible to provide a configuration suitable for the above. Moreover, since the intervening layer softens at the molding temperature of the mold resin, the pressing force from the mold is more easily relaxed, which is preferable.

  In addition, the code | symbol in the bracket | parenthesis of each means described in the claim and this column is an example which shows a corresponding relationship with the specific means as described in embodiment mentioned later.

1 is a diagram showing a schematic cross-sectional configuration of a semiconductor device according to a first embodiment of the present invention. FIG. 3 is a process diagram illustrating a method for manufacturing the semiconductor device shown in FIG. 1. FIG. 3 is a process diagram illustrating a manufacturing method subsequent to FIG. 2. It is a schematic sectional drawing which shows the principal part of the manufacturing method of the semiconductor device concerning 2nd Embodiment of this invention. It is a schematic sectional drawing which shows the assembly | attachment structure to the radiation fin of the semiconductor device concerning 3rd Embodiment of this invention.

  Hereinafter, embodiments of the present invention will be described with reference to the drawings. In the following embodiments, parts that are the same or equivalent to each other are given the same reference numerals in the drawings in order to simplify the description.

(First embodiment)
A semiconductor device according to a first embodiment of the present invention will be described with reference to FIG. This semiconductor device is mounted on a vehicle such as an automobile and is applied as a device for driving various electronic devices for the vehicle.

  The semiconductor device according to the present embodiment is broadly divided into a semiconductor element 10, a pair of metal plates 20 and 30 sandwiching the semiconductor element 10, and ceramic plates provided on outer surfaces 21 and 31 of the pair of metal plates 20 and 30, respectively. 40, 50, and the semiconductor element 10, the pair of metal plates 20, 30, and the mold resin 60 that seals the ceramic plates 40, 50, and the outer surfaces 41, 51 of the ceramic plates 40, 50 serve as heat dissipation surfaces. 60 is exposed.

  The semiconductor element 10 has a surface 11 made of a silicon semiconductor and the other surface 12 in a front-back relationship, and is configured as a plate-shaped semiconductor chip here. Specifically, the semiconductor element 10 includes a power element such as an IGBT (Insulated Gate Bipolar Transistor) or a power MOS, and has a rectangular plate shape.

  The pair of metal plates 20 and 30 includes a first metal plate 20 located on the one surface 11 side of the semiconductor element 10 and a second metal plate 30 located on the other surface 12 side. It is joined to the one surface 11 side and the other surface 12 side so as to be electrically and thermally conductive.

  In other words, the pair of metal plates 20 and 30 are provided so that the inner surfaces 22 and 32 face each other, and the semiconductor element 10 is provided so as to be sandwiched between both the metal plates 20 and 30. , 30 are joined to the inner surfaces 22, 32. Here, the semiconductor element 10 and the first metal plate 20 are joined via a conductive spacer 70 so as to be electrically and thermally conductive.

  The pair of metal plates 20 and 30 have conductivity and heat dissipation, and function as electrodes of the semiconductor element 10 and a heat dissipation member. Specifically, the metal plates 20 and 30 are made of pure Cu (copper), a Cu alloy, or the like, and typically have a rectangular plate shape. Here, although the metal plates 20 and 30 are configured as islands of the lead frame, they may be heat sinks that are thicker than the islands and have excellent heat dissipation properties.

  In addition, as the metal plates 20 and 30, the base material may be pure Cu or Cu alloy, and the surface thereof may be provided with Ni plating, Au plating, or the like. Further, as the metal plates 20 and 30, other metal materials such as AL (aluminum), Fe (iron), Mo (molybdenum), and laminated materials thereof may be used.

  The spacer 70 has a plate shape (for example, a rectangular plate shape) slightly smaller than the semiconductor element 10 and is made of a material selected from the same metal materials as the metal plates 20 and 30. In order to maintain the height of the wire 100 when performing wire bonding between the semiconductor element 10 and the lead terminal 90, which will be described later, the spacer 11 and the first metal plate 20 and the first surface 11 which are wire bonding surfaces of the semiconductor element 10 are used. It plays a role to secure the height between.

  As shown in FIG. 1, in this semiconductor device, the first metal plate 20, the spacer 70, the semiconductor element 10, and the second metal plate 30 are electrically and thermally conductive by the solder 80. It is connected. The solder 80 is made of, for example, a general Pb-free solder such as Sn—Cu—Ni—P.

  Further, as shown in FIG. 1, the lead terminal 90 made of a conductive material such as copper is provided inside the mold resin 60, and the inner lead portion of the lead terminal 90 and one surface of the semiconductor element 10 are provided. 11 are connected by a wire 100 and are electrically connected.

  The wire 100 is formed by wire bonding such as gold, aluminum, copper, or the like. The semiconductor element 10 and the outside are electrically connected through the outer lead portion of the lead terminal 90.

The ceramic plates 40 and 50 have a plate shape made of an electrically insulating ceramic, and are provided on the outer surfaces 21 and 31 of the pair of metal plates 20 and 30, respectively. Here, the ceramic plates 40 and 50 have, for example, a rectangular plate shape. Specific examples of the material include Si ₃ N ₄ , and Al ₂ O ₃ and AlN can also be used. .

  The mold resin 60 is made of a thermosetting resin such as an epoxy resin, and is molded by a transfer mold method. The mold resin 60 seals the semiconductor element 10, the pair of metal plates 20, 30 and the ceramic plates 40, 50. The outer surfaces 41, 51 of the ceramic plates 40, 50 are exposed from the mold resin 60. ing.

  Here, as shown in FIG. 1, the entire side surfaces 43 and 53 located at the ends of the ceramic plates 40 and 50 are sealed with the mold resin 60, and the surface of the mold resin 60 and the ceramic plate 40 are also sealed. , 50 are on the same plane.

  The outer surfaces 41 and 51 of the ceramic plates 40 and 50 are configured as heat radiating surfaces that are exposed to the outside and radiate heat. The outer surfaces 41 and 51 are connected to an external casing or a cooler. It has become. Here, since the ceramic plates 40 and 50 are electrically insulating, electrical insulation with respect to the outside is guaranteed.

  In such a semiconductor device, as shown in FIG. 1, the outer surfaces 21 and 31 of the pair of metal plates 20 and 30 and the inner surfaces 42 and 52 of the ceramic plates 40 and 50, respectively, inside the mold resin 60. In between, intervening layers 110 and 120 that are softer than the metal plates 20 and 30 and the ceramic plates 40 and 50 are interposed.

  The intervening layers 110 and 120 are entirely located in the mold resin 60, and all the portions of the surface of the intervening layers 110 and 120 other than the portions in contact with the metal plates 20 and 30 and the ceramic plates 40 and 50 are molded resin 60. Is sealed.

  The intervening layers 110 and 120 have a sheet shape, and are provided by being interposed between the metal plates 20 and 30 and the ceramic plates 40 and 50 in the form of a coated sheet or a molded sheet. The material of the intervening layers 110 and 120 is not particularly limited as long as it is softer than the metal plates 20 and 30 and the ceramic plates 40 and 50, but a resin is typically employed.

  Specifically, the material of the intervening layers 110 and 120 includes, for example, a silicone resin material mixed with a filler made of BN (boron nitride) to improve thermal conductivity. Instead of the silicone resin, for example, an acrylic resin or an epoxy resin may be employed.

However, as described above, since the ceramic plates 40 and 50 have a structure that ensures electrical insulation, the filler material mixed into the intervening layers 110 and 120 can be used regardless of electrical insulation or conductivity. is there. Here, examples of the conductive filler material include metal pieces, graphite, and CNT (carbon nanotube), and examples of the insulating filler material include Al ₂ O ₃ , Si ₃ N ₄ , AlN, and BN. It is done.

  That is, the intervening layers 110 and 120 may be electrically insulating or conductive. Further, the intervening layers 110 and 120 may be sheets having adhesiveness to the metal plates 20 and 30 and the ceramic plates 40 and 50, or may be sheets having no adhesiveness. In addition, the material, shape, and size of one intervening layer 110 and the other intervening layer 120 may be the same or different.

  Further, in the present embodiment, as shown in FIG. 1, the side surfaces 43 and 53 of the ceramic plates 40 and 50 are sealed with the mold resin 60, and on the respective sides of the pair of metal plates 20 and 30. The plane size of the intervening layers 110 and 120 is slightly smaller than the plane size of the ceramic plates 40 and 50. Thereby, the whole edge part of the intervening layers 110 and 120 is located inside the edge part of the ceramic plates 40 and 50, and is retracted.

  Here, in the present embodiment, the end portions of the intervening layers 110 and 120 may protrude beyond the end portions of the ceramic plates 40 and 50, but the above-described retracted configuration is more desirable. By adopting such a configuration, the following advantages arise.

  Since the intervening layers 110 and 120 have poor adhesion to the mold resin 60 as compared with the ceramic plates 40 and 50, the interface between the end portions of the intervening layers 110 and 120 and the mold resin 60 becomes a separation starting point. The peeling of 60 progresses, and peeling between the side surfaces 43 and 53 of the ceramic plates 40 and 50 and the mold resin 60 tends to be induced.

  Here, as in the present embodiment, if the entire end portion of the intervening layers 110 and 120 is recessed inside the end portions of the ceramic plates 40 and 50, the separation starting point is greater than that of the protruding case. To the side surfaces 43 and 53 of the ceramic plates 40 and 50 can be lengthened. Therefore, the progress of peeling of the ceramic plates 40 and 50 to the side surfaces 43 and 53 can be delayed, and the peeling of the mold resin 60 on the side surfaces 43 and 53 of the ceramic plates 40 and 50 can be easily suppressed.

  Further, in the present embodiment, as shown in FIG. 1, the side surfaces 43 and 53 of the ceramic plates 40 and 50 are sealed with the mold resin 60, and on the respective sides of the pair of metal plates 20 and 30. The plane size of the ceramic plates 40 and 50 is slightly smaller than the plane size of the metal plates 20 and 30. Thereby, the whole edge part of the ceramic plates 40 and 50 is located inside the edge part of the metal plates 20 and 30, and is retracted.

  Here, in this embodiment, although the edge part of the ceramic plates 40 and 50 may protrude from the edge part of the metal plates 20 and 30, the above-mentioned retracted structure is more desirable. By adopting such a configuration, the following advantages arise.

  If the end portions of the ceramic plates 40 and 50 protrude from the end portions of the metal plates 20 and 30, tensile stress is applied to the end portions of the ceramic plates 40 and 50 by the mold resin 60, and the side surfaces 43 of the ceramic plates 40 and 50. 53, the mold resin 60 is easily peeled off.

  In contrast, if the entire ends of the ceramic plates 40 and 50 are retracted inside the ends of the metal plates 20 and 30 as in the present embodiment, the ends of the ceramic plates 40 and 50 are Since compressive stress is applied by the mold resin 60, peeling of the mold resin 60 is easily suppressed at the side surfaces 43 and 53 of the ceramic plates 40 and 50. Therefore, according to the present embodiment, it is possible to easily suppress peeling of the mold resin 60 on the side surfaces 43 and 53 of the ceramic plates 40 and 50.

  For example, when the metal plates 20 and 30, the intervening layers 110 and 120, and the ceramic plates 40 and 50 are formed in a rectangular plate shape, the intervening layers 110 and 120 are formed in order to realize the size relationship of the plane size. The metal plate 20, 30 is the largest rectangle, and the ceramic plates 40, 50 are intermediate size rectangles.

  Next, a manufacturing method for manufacturing the semiconductor device will be described with reference to FIGS. 2 and 3, the work in each step is shown in cross section.

  First, as shown in FIGS. 2A to 2D and FIG. 3A, the semiconductor element 10, the metal plates 20, 30, the intervening layers 110, 120, and the ceramic plates 40, 50 were laminated. The structure 1 is formed (structure formation process).

  In this structure forming step, first, as shown in FIG. 2A, the second metal plate 30 and the lead terminal 90 are arranged in a plane, and on the inner surface 32 of the second metal plate 30, The semiconductor element 10 and the spacer 70 are sequentially stacked via the solder 80 and soldered.

  Next, as shown in FIG. 2B, wire bonding is performed between the one surface 11 of the semiconductor element 10 and the lead terminal 90, and the wire 100 is connected between them. Next, as shown in FIG. 2C, the first metal plate 20 is mounted on the spacer 70 via the solder 80 and soldered.

  Thereafter, as shown in FIG. 2D, the intervening layers 110 and 120 having adhesiveness are provided in a state of being adhered to the inner surfaces of the ceramic plates 40 and 50. The intervening layers 110 and 120 are provided by printing or dispensing, pasting a molded sheet, or the like.

  And this ceramic plates 40 and 50 are affixed on the outer surfaces 21 and 31 of the metal plates 20 and 30 via the intervening layers 110 and 120, respectively. Thereafter, as shown in FIG. 3A, the intermediate layers 110 and 120 are cured by heating. In this way, the structure 1 is completed.

  Next, the resin molding step shown in FIGS. 3B and 3C is performed. In this step, as shown in FIG. 3B, a mold 200 is used that forms a cavity 230 having a spatial shape corresponding to the outer shape of the mold resin 60 by matching the upper mold 210 and the lower mold 220. .

  Then, the structure resin 1 is placed in the cavity 230 and the mold resin 60 is filled in the cavity 230 to form the mold resin 60. Thus, the semiconductor device of this embodiment is completed.

  Here, in the structure forming step, the dimension of the structure 1 in the stacking direction is set to be larger than the dimension of the cavity 230 in the stacking direction. In the resin molding process, the upper die 210 is pressed against the outer surface 41 of the ceramic plate 40 from the one surface 11 side of the semiconductor element 10, and the lower die 220 is pressed against the outer surface 51 of the ceramic plate 50 from the other surface 12 side of the semiconductor element 10. Thus, the intervening layers 110 and 120 are compressed in the thickness direction.

  Accordingly, the structure 1 is installed in the cavity 230 with the dimension in the stacking direction of the structure 1 being the same as the dimension of the cavity 230 in the stacking direction. At this time, the resin burrs are prevented by pressing the resin molding die 200 against the heat radiating surfaces 41 and 51. The pressing force from the die 200 is caused by the soft intervening layers 110 and 120. Alleviated.

  Therefore, according to the present embodiment, it is possible to prevent damage to the semiconductor element 10, the solder connection portion and the ceramic plate due to the pressing force of the mold 200, or damage to the mold 200 itself. The generation of resin burrs on 51 can be prevented.

(Second Embodiment)
A second embodiment of the present invention will be described with reference to FIG. In the manufacturing method shown in the first embodiment, the case where an adhesive sheet is used as the intervening layers 110 and 120 has been described. However, in the present embodiment, a manufacturing method in the case of a sheet having no adhesiveness is described. .

  In this case, as shown in FIG. 4, intervening layers 110 and 120 as molded sheets are prepared, and the ceramic plate 50, intervening layer 120, structure 1, intervening layer 110, ceramic are prepared from the lower mold 220 of the mold 200. The plates 40 may be stacked in this order, the upper mold 210 may be stacked thereon, the upper and lower molds 210 and 220 may be matched, and then molding may be performed.

(Third embodiment)
The semiconductor device shown in FIG. 1 is used by, for example, assembling to an external radiating fin 300 as shown in FIG. In this case, the heat radiating surfaces 41 and 51 of the semiconductor device are in contact with the heat radiating fins 300 via the heat radiating gel 301. It may be conductive. The heat dissipation gel 301 may be heat dissipation grease or the like.

(Other embodiments)
In each of the above embodiments, the surface of the mold resin 60 and the outer surfaces 41 and 51 of the ceramic plates 40 and 50 are in the same plane, but the outer surfaces 41 and 51 of the ceramic plates 40 and 50 are exposed from the mold resin 60. The outer surfaces 41 and 51 of the ceramic plates 40 and 50 may protrude from the surface of the mold resin 60 or may be retracted.

  For example, when the outer surfaces 41 and 51 of the ceramic plates 40 and 50 protrude from the surface of the mold resin 60, a part of the side surfaces 43 and 53 located at the ends of the ceramic plates 40 and 50, specifically the side surfaces A part of the inner surfaces 43 and 53 near the inner surface may be sealed with the mold resin 60.

  Moreover, in the said 1st Embodiment, the magnitude | size relationship of each plane size of the metal plates 20 and 30, the intervening layers 110 and 120, and the ceramic plates 40 and 50 was prescribed | regulated on each side of a pair of metal plates 20 and 30. In addition, the size of each plane is not limited to the above-described size relationship, and may be a size relationship other than the above as long as the pressing force from the mold 200 is relaxed by the intervening layers 40 and 50. Of course.

  The intervening layers 110 and 120 are softer than the metal plates 20 and 30 and the ceramic plates 40 and 50 and have a glass transition point (Tg) lower than the molding temperature of the mold resin 60 (for example, about 175 ° C.). ). Examples of such a material include acrylic-modified epoxy resins. According to this, since the intervening layers 110 and 120 are softened at the molding temperature of the mold resin 60 in the resin molding step, the pressing force from the mold 200 can be more easily relaxed.

  Further, the number of semiconductor elements 10 provided between the pair of metal plates 20 and 30 is not limited to one and may be plural. Further, the spacer may not be provided between the pair of metal plates 20 and 30 as long as the electrical connection between the semiconductor element 10 and the outside is appropriately performed. That is, the inner surface 22 of the first metal plate 20 may be directly soldered to the one surface 11 of the semiconductor element 10.

  Further, as the semiconductor device, in FIG. 1, the components on the one surface 11 side of the semiconductor element 10 in the mold resin 60, that is, the spacer 70, the first metal plate 20, the intervening layer 10, the ceramic plate 40, and the like. The solder 80 to be joined may be omitted. In this case, a single-side heat dissipation structure that radiates heat through the second metal plate 30 and the ceramic plate 50 on the other surface 12 side of the semiconductor element 10 is formed.

  Further, the present invention is not limited to the above-described embodiment, and can be appropriately changed within the scope described in the claims. The above embodiments are not irrelevant to each other, and can be combined as appropriate unless the combination is clearly impossible, and the above embodiments are not limited to the illustrated examples. Absent. In each of the above-described embodiments, it is needless to say that elements constituting the embodiment are not necessarily essential unless explicitly stated as essential and clearly considered essential in principle. Yes. Further, in each of the above embodiments, when numerical values such as the number, numerical value, quantity, range, etc. of the constituent elements of the embodiment are mentioned, it is clearly limited to a specific number when clearly indicated as essential and in principle. The number is not limited to the specific number except for the case. Further, in each of the above embodiments, when referring to the shape, positional relationship, etc. of the component, etc., the shape, unless otherwise specified and in principle limited to a specific shape, positional relationship, etc. It is not limited to the positional relationship or the like.

DESCRIPTION OF SYMBOLS 10 Semiconductor element 20, 30 Metal plate 40, 50 Ceramic plate 60 Mold resin 110, 120 Interposition layer

Claims (5)

A semiconductor element (10) in which one side (11) and the other side (12) are in a front-back relationship;
A pair of metal plates (20, 30) sandwiched between the one side and the other side of the semiconductor element so as to be electrically and thermally conductive and sandwiching the semiconductor element;
An electrically insulating ceramic plate (40, 50) provided on the outer surface (21, 31) of each of the pair of metal plates;
A mold resin (60) for sealing so as to enclose the semiconductor element, the pair of metal plates and the ceramic plate;
The outer surface (41, 51) of the ceramic plate is exposed from the mold resin,
At least part of the side surfaces (43, 53) located at the end of each ceramic plate is sealed with the mold resin,
On each side of the pair of metal plates, the plane size of the ceramic plate is slightly smaller than the plane size of the metal plate, and the entire end portion of the ceramic plate is located inside the end portion of the metal plate. And
An intervening layer (110, 120) that is softer than the metal plate and the ceramic plate is interposed between the outer surface of each of the pair of metal plates and the inner surface (42, 52) of the ceramic plate. A semiconductor device characterized by the above. At least part of the side surfaces (43, 53) located at the end of each ceramic plate is sealed with the mold resin,
On each side of the pair of metal plates, the plane size of the interposition layer is slightly smaller than the plane size of the ceramic plate, and the entire end portion of the interposition layer is located inside the end portion of the ceramic plate. The semiconductor device according to claim 1, wherein: The intervening layer, a semiconductor device according to any one of claims 1 or 2, characterized in that a material having a low glass transition point than the molding temperature of the molding resin. A semiconductor element (10) in which one side (11) and the other side (12) are in a front-back relationship;
A pair of metal plates (20, 30) sandwiched between the one side and the other side of the semiconductor element so as to be electrically and thermally conductive and sandwiching the semiconductor element;
An electrically insulating ceramic plate (40, 50) provided on the outer surface (21, 31) of each of the pair of metal plates;
A mold resin (60) for sealing so as to enclose the semiconductor element, the pair of metal plates and the ceramic plate;
The outer surface (41, 51) of the ceramic plate is exposed from the mold resin,
Between the outer surface of each of the pair of metal plates and the inner surface (42, 52) of the ceramic plate, an intervening layer (110, 120) softer than the metal plate and the ceramic plate is interposed ,
The intervening layer is made of a material having a glass transition point lower than the molding temperature of the mold resin. A semiconductor element (10) in which one side (11) and the other side (12) are in a front-back relationship;
A metal plate (30) joined to only the other side of the semiconductor element so as to be electrically and thermally conductive;
Before SL metallic electrically insulating ceramic plate provided on the outer surface (31) in the plate (50),
A mold resin (60) for sealing so as to enclose the semiconductor element, the metal plate and the ceramic plate;
The outer surface (51) of the ceramic plate is exposed from the mold resin,
Between the outer surface of the metal plate and the inner surface (52) of the ceramic plate, an intervening layer (120) softer than the metal plate and the ceramic plate is interposed ,
The intervening layer is made of a material having a glass transition point lower than the molding temperature of the mold resin.

Images