JP7204770B2 - Double-sided cooling power module and manufacturing method thereof - Google Patents

Double-sided cooling power module and manufacturing method thereof Download PDF

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JP7204770B2
JP7204770B2 JP2020550787A JP2020550787A JP7204770B2 JP 7204770 B2 JP7204770 B2 JP 7204770B2 JP 2020550787 A JP2020550787 A JP 2020550787A JP 2020550787 A JP2020550787 A JP 2020550787A JP 7204770 B2 JP7204770 B2 JP 7204770B2
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substrate
electrode
power
metal plates
power module
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JP2021516869A (en
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ホンチョル オ
チェサン ミン
ヨンヒ パク
チンウ イ
ヒチン チョ
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LG Electronics Inc
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LG Electronics Inc
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    • H05K7/209—Heat transfer by conduction from internal heat source to heat radiating structure
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    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
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Description

本発明は、電気自動車、ハイブリッド自動車、燃料電池自動車などのエコカー、およびエアコンなどの家電機器に備えられる両面冷却型パワーモジュールならびにその製造方法に関するものである。 TECHNICAL FIELD The present invention relates to a double-sided cooling power module provided in eco-cars such as electric vehicles, hybrid vehicles, and fuel cell vehicles, and home appliances such as air conditioners, and a method of manufacturing the same.

一般的に、電気自動車、ハイブリッド自動車、燃料電池自動車などのエコカーや、エアコンなどの家電機器には、駆動手段としてのモータが備えられる。このようなモータは、コントローラのＰＷＭ（Pulse Width Modulation）信号によって直流電圧を三相電圧に変換するインバータからの電力ケーブルを介して伝達される三相電流によって駆動される。 In general, eco-cars such as electric vehicles, hybrid vehicles, and fuel cell vehicles, and home appliances such as air conditioners are equipped with motors as driving means. Such motors are driven by three-phase current transmitted through power cables from an inverter that converts DC voltage to three-phase voltage by PWM (Pulse Width Modulation) signals of a controller.

上記インバータには、電源供給部から供給される電源を利用してモータを駆動するための電源を供給する動作を行うパワー素子が備えられている。パワー素子は、スイッチング動作によりモータを駆動するための電源を供給することができる。このようなパワー素子としては、従来では、ＧＴＯ（Gate Turn-Off thyristor）半導体素子が使用されていたが、現在では、ＩＧＢＴ（Insulated Gate Bipolar mode Transistor）半導体素子が使用されているのが実情である。 The inverter is provided with a power element that supplies power for driving the motor using the power supplied from the power supply unit. The power element can supply power for driving the motor by switching operation. Conventionally, a GTO (Gate Turn-Off thyristor) semiconductor device has been used as such a power device, but in reality, an IGBT (Insulated Gate Bipolar mode Transistor) semiconductor device is currently used. be.

パワー素子のスイッチング動作時には、パワー素子と、それを含むパワーモジュール内部と、の温度が高くなる。内部の温度が過度に高くなることで、パワー素子が損傷する可能性が存在する。パワー素子が損傷した場合、モータの動作が正常に行われないことがある。よって、パワー素子およびパワーモジュールの過熱を防止するためには、適切な冷却方法が必須的に導入されなければならない。 During the switching operation of the power element, the temperature of the power element and the inside of the power module including the power element rises. Excessive internal temperature may damage the power device. If the power element is damaged, the motor may not operate normally. Therefore, in order to prevent overheating of power elements and power modules, a suitable cooling method must be introduced.

このために、パワー素子を含むパワーモジュールは、スイッチング動作時のチップアセンブリの冷却のためのヒートシンクを含むことができる。上記ヒートシンクは、チップアセンブリの上面および下面のいずれか１つの面に付着される片面ヒートシンクと、両面に付着される両面ヒートシンクと、を含むことができる。 To this end, a power module containing power devices may include a heat sink for cooling the chip assembly during switching operations. The heatsink may include a single-sided heatsink attached to one of the upper and lower surfaces of the chip assembly, and a double-sided heatsink attached to both sides.

このうち、両面ヒートシンクを有する両面冷却型パワーモジュールは、片面ヒートシンクを有する片面冷却型パワーモジュールに比べて冷却性能が優れるので、その使用が増加する傾向にある。 Among them, double-sided cooling power modules with double-sided heat sinks have a cooling performance superior to single-sided cooled power modules with single-sided heat sinks, and their use tends to increase.

ただし、従来の両面冷却型パワーモジュールの場合、パワー素子の上部電極のうちのゲート電極を信号ピンまたは端子と連結させるためのワイヤなどの連結部材が含まれていた。このような連結部材の使用により、コンパクトなパワーモジュールの具現が困難であり、追加的な連結工程が追加されることで、工程の単純化および製造時間の減少も難しいという問題が存在する。 However, the conventional double-sided cooling power module includes a connecting member such as a wire for connecting the gate electrode of the upper electrodes of the power device to the signal pin or terminal. The use of such a connection member makes it difficult to implement a compact power module, and an additional connection process is added, making it difficult to simplify the process and reduce the manufacturing time.

本発明が解決しようとする課題は、パワー素子のゲート電極を信号ピンまたは端子と連結するためのワイヤなどの連結部材を備えずに製造可能であることにより、製造工程を単純化し、製造時間を減少させ、よりコンパクトなサイズを有する両面冷却型パワーモジュールを提供することである。 The problem to be solved by the present invention is to simplify the manufacturing process and shorten the manufacturing time by making it possible to manufacture the power element without connecting members such as wires for connecting the gate electrode of the power element to the signal pin or terminal. To provide a double-sided cooled power module with reduced and more compact size.

本発明の実施例に係るパワーモジュールは、金属プレートが一面に形成された第１基板と、第１基板と離隔され、第１基板の複数の金属プレートと対向する一面に複数の金属プレートが形成された第２基板と、第１基板と第２基板との間に備えられる複数のパワー素子と、複数のパワー素子のそれぞれの第１面に形成される第１電極と、複数のパワー素子のそれぞれの第２面に形成される第２電極と、を有し、複数のパワー素子は、第１電極が第２基板の複数の金属プレートと接合される第１パワー素子と、第１電極が第１基板の複数の金属プレートと接合される第２パワー素子と、を有する。 A power module according to an embodiment of the present invention includes a first substrate having a metal plate formed on one surface thereof, and a plurality of metal plates formed on a surface of the first substrate which is separated from the first substrate and faces the plurality of metal plates. a second substrate, a plurality of power elements provided between the first substrate and the second substrate, first electrodes formed on first surfaces of the plurality of power elements, and the plurality of power elements; a second electrode formed on each second surface, the plurality of power elements comprising: a first power element having the first electrode bonded to the plurality of metal plates of the second substrate; a second power device bonded to the plurality of metal plates of the first substrate.

一実施例によれば、複数のパワー素子は、ＩＧＢＴ半導体素子を有し、第１電極は、ゲート電極およびエミッタ電極を有し、第２電極は、コレクタ電極を有することができる。 According to one embodiment, the plurality of power elements may comprise IGBT semiconductor elements, the first electrode comprising a gate electrode and an emitter electrode, and the second electrode comprising a collector electrode.

第１基板および第２基板のそれぞれに形成された複数の金属プレートのうちのいずれか１つは、ゲート電極と一部が接合され、他の一部が信号ピンまたは端子と接合される。 One of the plurality of metal plates formed on each of the first substrate and the second substrate is partly joined to the gate electrode and partly joined to the signal pin or terminal.

パワーモジュールは、ゲート電極と信号ピンまたは端子とを連結するワイヤを備えなくてもよい。 The power module may not have wires connecting the gate electrodes and the signal pins or terminals.

第１基板の複数の金属プレートのうちのいずれか１つは、第１パワー素子のコレクタ電極および第２パワー素子のエミッタ電極と電気的に連結される。 Any one of the plurality of metal plates of the first substrate is electrically connected to the collector electrode of the first power device and the emitter electrode of the second power device.

コレクタ電極にはスペーサが接合され、いずれか１つの金属プレートは、第１パワー素子のコレクタ電極に接合されたスペーサおよび第２パワー素子のエミッタ電極と接合される。 A spacer is bonded to the collector electrode, and one of the metal plates is bonded to the spacer bonded to the collector electrode of the first power element and the emitter electrode of the second power element.

一実施例によれば、第１基板および第２基板のそれぞれの金属プレートのうちの第１金属プレートは、信号ピンおよび端子と接合され、第１金属プレートには、少なくとも１つの隙間を有するようにする少なくとも１つのスリットが形成される。 According to one embodiment, a first metal plate of the respective metal plates of the first substrate and the second substrate is bonded with the signal pin and the terminal, and the first metal plate has at least one gap. At least one slit is formed to allow

一実施例によれば、第１金属プレートは、少なくとも１つのスリットによって複数の金属プレートに区分される。 According to one embodiment, the first metal plate is divided into a plurality of metal plates by at least one slit.

第１基板の他面および第２基板の他面のそれぞれに金属プレートが形成される。 A metal plate is formed on each of the other surface of the first substrate and the other surface of the second substrate.

本発明の実施例に係るパワーモジュールの製造方法は、第１基板と第２基板とが対向する一面のそれぞれに接合材料を印刷するステップと、第１基板と第２基板との間に複数のパワー素子を実装するステップと、第１基板、第２基板および複数のパワー素子が接合されるように焼結（sintering）するステップと、を有し、複数のパワー素子は、第１面に形成される第１電極および第１面の反対面である第２面に形成される第２電極を有し、実装するステップは、複数のパワー素子のうちの第１パワー素子を、第１面に形成された第１電極が第２基板を向くように実装するステップと、複数のパワー素子のうちの第２パワー素子を、第１面に形成された第１電極が第１基板を向くように実装するステップと、を有することができる。 A method of manufacturing a power module according to an embodiment of the present invention includes the steps of: printing a bonding material on each of the opposing surfaces of a first substrate and a second substrate; mounting a power device; and sintering such that the first substrate, the second substrate and the plurality of power devices are joined together, the plurality of power devices being formed on the first surface. and a second electrode formed on a second surface opposite to the first surface; mounting the formed first electrode so as to face the second substrate; and mounting the second power device among the plurality of power devices so that the first electrode formed on the first surface faces the first substrate. and implementing.

一実施例によれば、実装するステップは、第１基板と第２基板との間に複数のパワー素子、複数のダイオードならびに信号ピンおよび端子を有するリードフレームを実装するステップを有することができる。 According to one embodiment, the mounting step can include mounting a lead frame having a plurality of power devices, a plurality of diodes and signal pins and terminals between the first substrate and the second substrate.

焼結するステップは、第１基板および第２基板のそれぞれの第１金属プレートが、複数のパワー素子のうちのいずれか１つのゲート電極と一部が接合され、信号ピンまたは端子と他の一部が接合されるように焼結するステップを有することができる。 In the sintering step, the first metal plate of each of the first substrate and the second substrate is partly joined to the gate electrode of any one of the plurality of power elements, and is connected to the signal pin or terminal and the other one. There may be a step of sintering so that the parts are joined.

パワーモジュールの製造方法は、焼結された第１基板と第２基板との間に絶縁材料がモールド（モールディング）されるステップと、リードフレームのうち信号ピンおよび端子を除いたフレームがカットされ、信号ピンおよび端子が予め設定された形態に形成（フォーミング）されるステップと、信号ピンおよび端子の絶縁のための絶縁材料がモールドされるステップと、をさらに有することができる。 A method for manufacturing a power module includes the steps of: molding an insulating material between a sintered first substrate and a second substrate; cutting a lead frame excluding signal pins and terminals; The method can further comprise forming the signal pins and terminals into a preset configuration and molding an insulating material for insulation of the signal pins and terminals.

本発明の実施例によれば、上面基板および下面基板に形成された一金属プレートがパワー素子のゲート電極と信号ピンとを連結するように形成されることで、別途のワイヤを必要としないパワーモジュールを提供することができる。よって、よりコンパクトなパワーモジュールの製造が可能である。 According to an embodiment of the present invention, one metal plate formed on the upper substrate and the lower substrate is formed to connect the gate electrode of the power device and the signal pin, thereby eliminating the need for separate wires. can be provided. Therefore, it is possible to manufacture a more compact power module.

また、別途のワイヤ連結工程が行われることなく、１回の焼結工程だけで基板とパワー素子との接合が可能であるので、製造工程が単純化されるだけではなく、製造時間も効果的に減少させることができる。 In addition, since the substrate and the power device can be bonded through a single sintering process without a separate wire connection process, the manufacturing process is simplified and the manufacturing time is reduced. can be reduced to

さらに、第１パワー素子と第２パワー素子とが異なる方向を向くように配置されることで、上面基板の一金属プレートが第１パワー素子のコレクタ電極および第２パワー素子のエミッタ電極と電気的に連結されるように形成され、ハーフブリッジ回路がより簡単に具現される。 Furthermore, by arranging the first power element and the second power element so as to face in different directions, one metal plate of the upper substrate is electrically connected to the collector electrode of the first power element and the emitter electrode of the second power element. , so that the half-bridge circuit can be implemented more easily.

また、基板のそれぞれの金属プレートのうちの信号ピンおよび端子と接合される金属プレートには、熱による膨張時の基板の変形を防止するためのスリットが形成される。よって、金属プレートとセラミック基板との熱膨張係数の差により発生する基板の変形による破損や損傷などを防止することができる。 Also, among the metal plates of the substrate, the metal plates bonded to the signal pins and the terminals are formed with slits to prevent deformation of the substrate during thermal expansion. Therefore, it is possible to prevent breakage or damage due to deformation of the substrate caused by a difference in coefficient of thermal expansion between the metal plate and the ceramic substrate.

パワーモジュールに備えられるパワー素子の一実施例を示す図である。It is a figure which shows one Example of the power element with which a power module is equipped. パワーモジュールに備えられるパワー素子の一実施例を示す図である。It is a figure which shows one Example of the power element with which a power module is equipped. パワーモジュールに備えられるパワー素子の一実施例を示す図である。It is a figure which shows one Example of the power element with which a power module is equipped. 図１に図示されたパワー素子を含むサブモジュールの一部の構造を概略的に示す断面図である。FIG. 2 is a cross-sectional view schematically showing the structure of part of a sub-module including the power device shown in FIG. 1; 本発明の実施例に係る両面冷却型パワーモジュールの製造過程を説明するフローチャートである。4 is a flow chart illustrating a manufacturing process of a double-sided cooling power module according to an embodiment of the present invention; 図３に図示された両面冷却型パワーモジュールの製造過程を各ステップ別に示す例示図である。4A and 4B are exemplary diagrams showing each step of a manufacturing process of the double-sided cooling power module shown in FIG. 3; 図３に図示された両面冷却型パワーモジュールの製造過程を各ステップ別に示す例示図である。4A and 4B are exemplary diagrams showing each step of a manufacturing process of the double-sided cooling power module shown in FIG. 3; 図３に図示された両面冷却型パワーモジュールの製造過程を各ステップ別に示す例示図である。4A and 4B are exemplary diagrams showing each step of a manufacturing process of the double-sided cooling power module shown in FIG. 3; 図３に図示された両面冷却型パワーモジュールの製造過程を各ステップ別に示す例示図である。4A and 4B are exemplary diagrams showing each step of a manufacturing process of the double-sided cooling power module shown in FIG. 3; 図３に図示された両面冷却型パワーモジュールの製造過程を各ステップ別に示す例示図である。4A and 4B are exemplary diagrams showing each step of a manufacturing process of the double-sided cooling power module shown in FIG. 3; 図３に図示された両面冷却型パワーモジュールの製造過程を各ステップ別に示す例示図である。4A and 4B are exemplary diagrams showing each step of a manufacturing process of the double-sided cooling power module shown in FIG. 3; 図３に図示された両面冷却型パワーモジュールの製造過程を各ステップ別に示す例示図である。4A and 4B are exemplary diagrams showing each step of a manufacturing process of the double-sided cooling power module shown in FIG. 3; 図３に図示された両面冷却型パワーモジュールの製造過程を各ステップ別に示す例示図である。4A and 4B are exemplary diagrams showing each step of a manufacturing process of the double-sided cooling power module shown in FIG. 3; 図３に図示された両面冷却型パワーモジュールの製造過程を各ステップ別に示す例示図である。4A and 4B are exemplary diagrams showing each step of a manufacturing process of the double-sided cooling power module shown in FIG. 3; 図３に図示された両面冷却型パワーモジュールの製造過程を各ステップ別に示す例示図である。4A and 4B are exemplary diagrams showing each step of a manufacturing process of the double-sided cooling power module shown in FIG. 3; 図３に図示された両面冷却型パワーモジュールの製造過程を各ステップ別に示す例示図である。4A and 4B are exemplary diagrams showing each step of a manufacturing process of the double-sided cooling power module shown in FIG. 3; 図３に図示された両面冷却型パワーモジュールの製造過程を各ステップ別に示す例示図である。4A and 4B are exemplary diagrams showing each step of a manufacturing process of the double-sided cooling power module shown in FIG. 3; 図３に図示された両面冷却型パワーモジュールの製造過程を各ステップ別に示す例示図である。4A and 4B are exemplary diagrams showing each step of a manufacturing process of the double-sided cooling power module shown in FIG. 3;

以下、添付された図面を参照して、本明細書に開示された実施例を詳しく説明するが、同一または類似する構成要素は、同じ参照番号を付し、それに対する重なる説明は、省略することにする。以下の説明で用いられる構成要素に対する接尾辞「モジュール」および「部」は、明細書を容易に作成するために付与または混用されるものであり、それ自体で相互に区別される意味または役割を持つものではない。また、本明細書に開示された実施例の説明において、関連公知技術に関する具体的な説明が、本明細書に開示された実施例の要旨を不明確にすると判断される場合、その詳細な説明を省略する。また、添付された図面は、本明細書に開示された実施例を容易に理解できるようにするためのものであり、添付された図面によって本明細書に開示された技術的思想が限定されるものではなく、本発明の思想および技術範囲に含まれる全ての変更、均等物ないし代替物を含むものと理解されるべきである。 Hereinafter, the embodiments disclosed herein will be described in detail with reference to the accompanying drawings. The same or similar components are denoted by the same reference numerals, and overlapping descriptions thereof will be omitted. to The suffixes "module" and "part" for the components used in the following description are given or used together for the sake of facilitating the preparation of the specification, and by themselves have mutually distinct meanings or roles. not something to have In addition, in the description of the embodiments disclosed in this specification, when it is determined that the specific description of the related known technology obscures the gist of the embodiments disclosed in this specification, the detailed description omitted. In addition, the attached drawings are intended to facilitate understanding of the embodiments disclosed herein, and the technical ideas disclosed herein are limited by the attached drawings. Instead, it should be understood to include all modifications, equivalents or alternatives falling within the spirit and scope of the invention.

第１、第２などのように序数を含む用語は、多様な構成要素を説明するために用いられることがあるが、上記構成要素は、上記用語によって限定されるものではない。上記用語は、１つの構成要素を他の構成要素から区別するためにのみ用いられる。 Terms including ordinal numbers, such as first, second, etc., may be used to describe various components, but the components are not limited by the terms. The terms are only used to distinguish one component from another.

ある構成要素が他の構成要素に「連結」または「接続」されていると記載される場合、その他の構成要素に直接連結または接続されている場合もあるが、間に他の構成要素が存在する可能性もあると理解されるべきである。一方、ある構成要素が他の構成要素に「直接連結」または「直接接続」されていると記載される場合、間に他の構成要素が存在しないと理解されるべきである。 When an element is said to be "coupled" or "connected" to another element, it may be directly coupled or connected to the other element, but there are other elements in between. It should be understood that there is also the possibility of On the other hand, when a component is described as being “directly coupled” or “directly connected” to another component, it should be understood that there are no other components in between.

単数の表現は、文脈上明白に違うように意味しない限り複数の表現を含む。 Singular expressions include plural expressions unless the context clearly dictates otherwise.

本出願で、「含む」または「有する」などの用語は、明細書に記載された特徴、数字、段階、動作、構成要素、部品またはこれらを組合せたものが存在することを指定しようとするものであって、１つまたは複数の他の特徴や数字、段階、動作、構成要素、部品またはこれらを組合せたものの存在または付加可能性を予め排除するものではないと理解されるべきである。 In this application, terms such as "including" or "having" are intended to specify the presence of any feature, number, step, act, component, part, or combination thereof described in the specification. and does not preclude the presence or possibility of adding one or more other features, figures, steps, acts, components, parts or combinations thereof.

以下、本明細書に添付された図面を参照して、本発明の実施例を詳しく説明する。 Hereinafter, embodiments of the present invention will be described in detail with reference to the drawings attached hereto.

図１ａ～図１ｃは、パワーモジュールに備えられるパワー素子の一実施例を示す図面である。 1a to 1c are diagrams showing one embodiment of a power element provided in a power module.

図１ａ～図１ｃを参照すると、パワー素子１００およびこれを含むパワーモジュールは、電源供給（バッテリなど）から供給される電力を、スイッチング動作によりモータを駆動するための電源に変換して供給する動作を行うことができる。 Referring to FIGS. 1a to 1c, the power device 100 and the power module including the power device convert power supplied from a power supply (battery, etc.) into power for driving a motor through a switching operation and supply the power. It can be performed.

パワー素子１００は、ＩＧＢＴ（Insulated Gate Bipolar mode Transistor）半導体で具現することができるが、これに限定されるものではない。 The power device 100 may be implemented with an IGBT (Insulated Gate Bipolar mode Transistor) semiconductor, but is not limited thereto.

パワー素子１００は、半導体層１０１、第１電極１０２、１０３および第２電極１０４を含むことができる。 The power device 100 can include a semiconductor layer 101 , first electrodes 102 , 103 and a second electrode 104 .

第１電極１０２、１０３は、半導体層１０１の第１面（例えば、半導体層１０１の上面）に形成され、第２電極１０４は、第１面の反対面である第２面（例えば、半導体層１０１の下面）に形成される。第１電極１０２、１０３は、パワー素子１００の上部電極に該当し、第２電極１０４は、パワー素子１００の下部電極に該当する。 The first electrodes 102 and 103 are formed on the first surface of the semiconductor layer 101 (eg, the top surface of the semiconductor layer 101), and the second electrode 104 is formed on the second surface opposite to the first surface (eg, the semiconductor layer 101). 101). The first electrodes 102 and 103 correspond to upper electrodes of the power device 100 , and the second electrode 104 corresponds to a lower electrode of the power device 100 .

本明細書では、パワー素子１００が第１電極としてのゲート電極１０２およびエミッタ（emitter）電極１０３を含み、第２電極としてコレクタ（collector）電極１０４を含むものと図示されているが、実施例によって、第１電極および第２電極は、多様な形態を有することができる。 Although the power device 100 is illustrated herein as including a gate electrode 102 and an emitter electrode 103 as first electrodes and a collector electrode 104 as a second electrode, in some embodiments, , the first electrode and the second electrode can have various forms.

一方、パワー素子１００の一面（例えば、第２電極１０４が形成された面）には、スペーサ１３１が接合される。スペーサ１３１が上記一面と接合されるために、上記一面とスペーサ１３１との間には、接合部１３２が形成される。接合部１３２は、はんだ（solder）または銀（Ag）などの導電性物質の接合材料が上記一面（例えば、第２電極１０４）に印刷される形態で形成され、スペーサ１３１は、はんだ付け（soldering）または焼結（sintering）工法によってパワー素子１００の一面と接合される。 On the other hand, a spacer 131 is bonded to one surface of the power element 100 (for example, the surface on which the second electrode 104 is formed). Since the spacer 131 is bonded to the one surface, a bonding portion 132 is formed between the one surface and the spacer 131 . The joint part 132 is formed by printing a joint material such as solder or a conductive material such as silver (Ag) on the one surface (for example, the second electrode 104), and the spacer 131 is soldered. ) or a sintering method to one side of the power device 100 .

スペーサ１３１は、高い熱伝導率と低い熱抵抗、低い電気抵抗を有するので通電性の低下を防止し、パワー素子１００から発生する熱を外部に伝達することができる。一般的に、スペーサ１３１は、Ａｌ－Ｓｉ－Ｃ、Ｃｕ－Ｍｏ、Ｃｕなどの物質で具現することができる。 Since the spacer 131 has high thermal conductivity, low thermal resistance, and low electrical resistance, it can prevent a decrease in electrical conductivity and transmit heat generated from the power device 100 to the outside. In general, the spacer 131 can be implemented with materials such as Al--Si--C, Cu--Mo, and Cu.

一方、スペーサ１３１は、所定の厚さを有するように具現されてもよい、よって、スペーサ１３１は、後述される第１基板１１０と第２基板１２０との間の絶縁距離を確保し、異なる厚さの素子（パワー素子１００およびダイオードなど）を利用してパワーモジュールを製造する際に、素子間の厚さの段差を補正することができる。また、スペーサ１３１が所定の厚さを有することで、パワー素子１００から発生する瞬間的な熱による影響を最小にするための熱容量が確保される。 On the other hand, the spacer 131 may be implemented to have a predetermined thickness. When manufacturing a power module using thin elements (such as the power element 100 and diodes), the difference in thickness between the elements can be corrected. In addition, the spacer 131 has a predetermined thickness to ensure a heat capacity for minimizing the influence of instantaneous heat generated from the power device 100 .

図２は、図１に図示されたパワー素子を含むサブモジュールの一部の構造を概略的に示す断面図である。 FIG. 2 is a cross-sectional view schematically showing the structure of part of a sub-module including the power device shown in FIG. 1. Referring to FIG.

図２を参照すると、両面冷却型パワーモジュールは、少なくとも１つのサブモジュール１０を含むことができる。 Referring to FIG. 2 , a double-sided cooled power module can include at least one sub-module 10 .

サブモジュール１０は、複数のパワー素子１００ａ、１００ｂ、第１基板１１０および第２基板１２０を含むことができる。本明細書では、第１基板１１０は、サブモジュール１０の上面に配置される基板に該当し、第２基板１２０は、サブモジュール１０の下面に配置される基板に該当するものと定義する。 The sub-module 10 can include a plurality of power devices 100a, 100b, a first substrate 110 and a second substrate 120. FIG. In this specification, the first substrate 110 is defined as a substrate arranged on the upper surface of the sub-module 10 and the second substrate 120 is defined as a substrate arranged on the lower surface of the sub-module 10 .

複数のパワー素子１００ａ、１００ｂのそれぞれには、図１ｃに示されたスペーサ１３１が接合される。 A spacer 131 shown in FIG. 1c is bonded to each of the plurality of power elements 100a, 100b.

第１基板１１０の一面は、上面ヒートシンク３０（図１３ａ参照）と接し、他面は、パワー素子１００ａ、１００ｂと接合される。第２基板１２０の一面は、下面ヒートシンク２０（図１２ａ参照）と接し、他面は、パワー素子１００ａ、１００ｂと接合される。 One surface of the first substrate 110 is in contact with the top heat sink 30 (see FIG. 13a), and the other surface is bonded to the power devices 100a and 100b. One surface of the second substrate 120 is in contact with the bottom heat sink 20 (see FIG. 12a), and the other surface is bonded to the power devices 100a and 100b.

パワー素子１００ａ、１００ｂは、動作時に高電力で動作し、これによって発熱も一般的なチップに比べて高いことがある。よって、サブモジュール１０に備えられる第１基板１１０および第２基板１２０は、一般的な基板に比べて熱伝導性が優れる必要があり、高電流の移動が可能であり、高い電気的絶縁性を有する必要がある。また、高い温度においても十分動作可能である必要がある。 The power devices 100a and 100b operate with high power during operation, and thus generate more heat than general chips. Therefore, the first substrate 110 and the second substrate 120 provided in the sub-module 10 should have superior thermal conductivity compared to general substrates, allow high current transfer, and have high electrical insulation. must have. In addition, it must be sufficiently operable even at high temperatures.

一般的に、第１基板１１０および第２基板１２０は、ＤＢＣ（Direct Bonded Copper）基板で具現することができる。この場合、第１基板１１０は、セラミックプレート１１１、およびセラミックプレート１１１の両面に形成される金属プレート１１２、１１３、１１４を含むことができる。第２基板１２０も第１基板１１０と同様に、セラミックプレート１２１、およびセラミックプレート１２１の両面に形成される金属プレート１２２、１２３、１２４、１２５を含むことができる。金属プレート１１２～１１４、１２２～１２５は、銅（Ｃｕ）で具現することができる。ただし、本発明の実施例による第１基板１１０および第２基板１２０は、ＤＢＣ基板に限定されるものではなく、サブモジュール１０に用いることのできる公知の各種基板で具現することもできる。 In general, the first substrate 110 and the second substrate 120 can be implemented with DBC (Direct Bonded Copper) substrates. In this case, the first substrate 110 may include a ceramic plate 111 and metal plates 112 , 113 and 114 formed on both sides of the ceramic plate 111 . Similarly to the first substrate 110 , the second substrate 120 may include a ceramic plate 121 and metal plates 122 , 123 , 124 and 125 formed on both sides of the ceramic plate 121 . The metal plates 112-114, 122-125 can be implemented with copper (Cu). However, the first substrate 110 and the second substrate 120 according to the embodiment of the present invention are not limited to the DBC substrate, and can be implemented with various known substrates that can be used in the submodule 10. FIG.

第１基板１１０および第２基板１２０は、金属プレート１１２～１１４、１２２～１２５の間に熱伝導性が高いセラミックプレート１１１、１２１が備えられることで、パワー素子１００ａ、１００ｂから発生する熱を外部のヒートシンク２０、３０に効果的に伝達することができる。 The first substrate 110 and the second substrate 120 are provided with ceramic plates 111 and 121 having high thermal conductivity between the metal plates 112 to 114 and 122 to 125, so that the heat generated from the power devices 100a and 100b is transferred to the outside. can be effectively transmitted to the heat sinks 20, 30.

一方、複数のパワー素子１００ａ、１００ｂのそれぞれは、ゲート電極１０２およびエミッタ電極１０３が第２基板１２０を向くように配置される第１パワー素子１００ａと、ゲート電極１０２およびエミッタ電極１０３が第１基板１１０を向くように配置される第２パワー素子１００ｂと、を含むことができる。金属プレート１１２～１１４、１２２～１２５は、接合されるパワー素子の電極に対応するように、特定のパターン（または形状）を有することができる。 On the other hand, each of the plurality of power elements 100a and 100b includes a first power element 100a arranged so that the gate electrode 102 and the emitter electrode 103 face the second substrate 120, and a first power element 100a arranged so that the gate electrode 102 and the emitter electrode 103 face the first substrate a second power element 100b arranged to face 110; The metal plates 112-114, 122-125 can have a particular pattern (or shape) to correspond to the electrodes of the power devices to which they are to be bonded.

例えば、第１基板１１０の金属プレート１１２～１１４のうち、パワー素子１００ａ、１００ｂを向く金属プレート１１２、１１３は、第２パワー素子１００ｂのゲート電極１０２と接合される金属プレート１１２と、第１パワー素子１００ａのコレクタ電極１０４と電気的に連結されるように、スペーサ１３１と接合され、同時に第２パワー素子１００ｂのエミッタ電極１０３と接合される金属プレート１１３と、を含むことができる。 For example, among the metal plates 112 to 114 of the first substrate 110, the metal plates 112 and 113 facing the power elements 100a and 100b are the metal plate 112 bonded to the gate electrode 102 of the second power element 100b and the first power element 100b. and a metal plate 113 bonded to the spacer 131 and simultaneously bonded to the emitter electrode 103 of the second power element 100b so as to be electrically connected to the collector electrode 104 of the element 100a.

特に、金属プレート１１３は、第１パワー素子１００ａのコレクタ電極１０４および第２パワー素子１００ｂのエミッタ電極１０３と電気的に連結されるように具現される。従来の場合、パワー素子１００ａ、１００ｂが同じ方向を向くように配置されることで、金属プレート１１３がパワー素子１００ａ、１００ｂのそれぞれに分離（大電流パターンが分離）されて接合されていた。しかしながら、本発明の場合、金属プレート１１３が分離されないので、工程がより単純になる。また、金属プレート１１３が第１パワー素子１００ａのコレクタ電極１０４と第２パワー素子１００ｂのエミッタ電極１０３とを電気的に連結させることで、別途の電気的連結のための工程なしでもハーフブリッジ（half bridge）回路を簡単に具現することができる。 In particular, the metal plate 113 is implemented to be electrically connected to the collector electrode 104 of the first power device 100a and the emitter electrode 103 of the second power device 100b. In the conventional case, the power elements 100a and 100b are arranged so as to face in the same direction, so that the metal plate 113 is separated from the power elements 100a and 100b (the large current pattern is separated) and joined to the power elements 100a and 100b. However, in the case of the present invention, the process is simpler because the metal plate 113 is not separated. In addition, the metal plate 113 electrically connects the collector electrode 104 of the first power device 100a and the emitter electrode 103 of the second power device 100b. bridge) circuit can be easily implemented.

一方、第２基板１２０の金属プレート１２２～１２５のうち、パワー素子１００ａ、１００ｂを向く金属プレート１２２～１２４は、第１パワー素子１００ａのゲート電極１０２と接合される金属プレート１２２、第１パワー素子１００ａのエミッタ電極１０３と接合される金属プレート１２３、および第２パワー素子１００ｂのコレクタ電極１０４と電気的に連結されるようにスペーサ１３１と接合される金属プレート１２４を含むことができる。 On the other hand, among the metal plates 122 to 125 of the second substrate 120, the metal plates 122 to 124 facing the power elements 100a and 100b are the metal plates 122 bonded to the gate electrode 102 of the first power element 100a and the first power element 100b. A metal plate 123 bonded to the emitter electrode 103 of the second power device 100a and a metal plate 124 bonded to the spacer 131 to be electrically connected to the collector electrode 104 of the second power device 100b may be included.

図４で後述されるように、ゲート電極１０２と接合される金属プレート１１２、１２２は、端子と連結されるようにパターンが形成される。すなわち、パワー素子１００ａ、１００ｂのゲート電極１０２は、金属プレート１１２、１２２によって端子と連結されるので、従来のように、ゲート電極と端子とを連結させるための別途のワイヤを備えなくてもよい。よって、別途のワイヤを連結させる工程が省略され、工程の単純化および工程時間の減少が可能であり、ワイヤが備えられないので、よりコンパクトなサブモジュール１０および両面冷却型パワーモジュールの製造が可能である。 As will be described later in FIG. 4, the metal plates 112 and 122 that are bonded to the gate electrode 102 are patterned to be connected to the terminals. That is, since the gate electrodes 102 of the power devices 100a and 100b are connected to the terminals by the metal plates 112 and 122, there is no need to provide a separate wire for connecting the gate electrodes and the terminals. . Therefore, it is possible to simplify the process and reduce the process time by omitting the process of connecting separate wires, and it is possible to manufacture a more compact sub-module 10 and a double-sided cooling power module because no wires are provided. is.

金属プレート１１２～１１３、１２２～１２３とパワー素子１００ａ、１００ｂとの間、または金属プレート１１３、１２４とスペーサ１３１との間には、接合材料が印刷されて形成される接合部１３３～１３５が含まれてもよい。接合部１３３～１３５は、パワー素子１００ａ、１００ｂから発生した熱を、第１基板１１０および第２基板１２０に伝達するための物質で具現することができる。例えば、接合部１３３～１３５は、はんだ（solder）、銀（Ag）などの物質で具現することができる。 Between the metal plates 112-113, 122-123 and the power elements 100a, 100b or between the metal plates 113, 124 and the spacers 131, joints 133-135 formed by printing a jointing material are included. may be The joints 133-135 may be implemented with a material for transferring heat generated from the power devices 100a and 100b to the first substrate 110 and the second substrate 120. FIG. For example, the joints 133-135 may be implemented with materials such as solder and silver (Ag).

また、第１基板１１０と第２基板１２０との間には、絶縁のための絶縁部１４０が形成される。絶縁部１４０は、絶縁材料がモールド（mold）されて形成される。 Also, an insulating part 140 for insulation is formed between the first substrate 110 and the second substrate 120 . The insulating part 140 is formed by molding an insulating material.

以下、図３～図１３ｂを参照して、本発明の実施例に係る両面冷却型パワーモジュールの製造過程について説明することにする。 Hereinafter, the manufacturing process of the double-sided cooling power module according to the embodiment of the present invention will be described with reference to FIGS. 3 to 13b.

図３は、本発明の実施例に係る両面冷却型パワーモジュールの製造過程を説明するフローチャートである。 FIG. 3 is a flow chart explaining the manufacturing process of the double-sided cooling power module according to the embodiment of the present invention.

図３を参照すると、両面冷却型パワーモジュールの製造過程は、大別して、接合材料の印刷過程、部品接合過程、端子形成過程およびヒートシンク組立て過程を含むことができる。 Referring to FIG. 3, the double-sided cooling power module manufacturing process can be roughly divided into a bonding material printing process, a component bonding process, a terminal forming process, and a heat sink assembling process.

例えば、上記接合材料の印刷過程はＳ１００ステップを含み、部品接合過程はＳ１１０ステップ～Ｓ１３０ステップを含み、端子形成過程はＳ１４０ステップ～Ｓ１５０ステップを含み、ヒートシンク組立て過程はＳ１６０ステップを含むことができる。 For example, the bonding material printing process may include step S100, the component bonding process may include steps S110 to S130, the terminal forming process may include steps S140 to S150, and the heat sink assembling process may include step S160.

以下、各ステップについて説明する。 Each step will be described below.

まず、第１基板１１０および第２基板１２０のそれぞれに接合材料が印刷される（Ｓ１００）。 First, a bonding material is printed on each of the first substrate 110 and the second substrate 120 (S100).

サブモジュール１０内に備えられる複数のパワー素子１００、ダイオードおよびリードフレームを、第１基板１１０と第２基板１２０との間に接合させるために、第１基板１１０および第２基板１２０のそれぞれに接合材料が印刷される。第１基板１１０が上面基板に該当し、第２基板１２０が下面基板に該当すると仮定すると、接合材料は、第１基板１１０の下面と第２基板１２０の上面とにそれぞれ印刷される。上記接合材料は、上述したように銀（Ag）やはんだ（solder）などを含むことができる。接合材料が印刷されることで、第１基板１１０および第２基板１２０のそれぞれに接合部１３３～１３５が形成される。 The plurality of power devices 100, diodes and lead frames provided in the sub-module 10 are bonded to the first substrate 110 and the second substrate 120, respectively, to bond between the first substrate 110 and the second substrate 120. material is printed. Assuming that the first substrate 110 corresponds to the top substrate and the second substrate 120 corresponds to the bottom substrate, the bonding material is printed on the bottom surface of the first substrate 110 and the top surface of the second substrate 120, respectively. The bonding material may include silver (Ag), solder, or the like, as described above. By printing the bonding material, bonding portions 133 to 135 are formed on the first substrate 110 and the second substrate 120, respectively.

次に、第２基板１２０上に部品が実装（mount）される（Ｓ１１０）。 Next, components are mounted on the second substrate 120 (S110).

上記部品は、複数のパワー素子、複数のダイオードおよびリードフレームを含むことができる。上記部品のそれぞれは、第２基板１２０上の接合位置上に実装される。このとき、第１パワー素子１００ａは、第１電極１０２、１０３が第２基板１２０を向くように実装され、第２パワー素子１００ｂは、第２電極１０４が第２基板１２０を向くように実装される。 The components may include power devices, diodes and leadframes. Each of the above components is mounted on a bonding position on the second substrate 120 . At this time, the first power element 100a is mounted so that the first electrodes 102 and 103 face the second substrate 120, and the second power element 100b is mounted so that the second electrode 104 faces the second substrate 120. be.

部品が実装された後、基板１１０、１２０および上記部品の焼結が行われる（Ｓ１２０）。 After the components are mounted, the substrates 110, 120 and the components are sintered (S120).

上記焼結が行われることで、第１基板１１０と第２基板１２０とは、相互に対向して加圧され、接合部１３３～１３５は、所定の温度に加熱される。これによって、基板１１０、１２０と部品とが相互に接合される。本発明の場合、別途のワイヤが備えられないので、一回の焼結動作で基板１１０、１２０および部品が全て接合される。 By performing the sintering, the first substrate 110 and the second substrate 120 are pressed against each other, and the bonding portions 133 to 135 are heated to a predetermined temperature. This joins the substrates 110, 120 and the component together. In the case of the present invention, since no separate wire is provided, the substrates 110 and 120 and the components are all bonded in one sintering operation.

次に、第１基板１１０と第２基板１２０との間に絶縁材料がモールドされる（Ｓ１３０）。 Next, an insulating material is molded between the first substrate 110 and the second substrate 120 (S130).

焼結が行われた後、パワー素子１００の絶縁耐圧を確保するために、第１基板１１０と第２基板１２０との間に絶縁材料がモールドされる。また、絶縁材料がモールドされることで、パワー素子１００が外部に露出されないので、パワー素子１００が効果的に保護される。 After sintering, an insulating material is molded between the first substrate 110 and the second substrate 120 in order to ensure the dielectric strength of the power device 100 . In addition, since the power element 100 is not exposed to the outside by being molded with an insulating material, the power element 100 is effectively protected.

以後、信号ピンおよび端子を含むリードフレームのうち、信号ピンおよび端子を除いた残りの部分がカットされ、信号ピンおよび端子が予め設定された形態に形成される（Ｓ１４０）。 After that, the lead frame including the signal pins and terminals is cut, and the signal pins and terminals are formed in a predetermined shape (S140).

リードフレームは、複数の信号ピンおよび端子と、上記信号ピンおよび端子が固定されるフレームと、を含むことができる。上記リードフレームが基板１１０、１２０に接合された後、上記信号ピンおよび端子は、基板１１０、１２０に固定されるので、上記フレームは、カットされて除去される。 A lead frame may include a plurality of signal pins and terminals and a frame to which the signal pins and terminals are secured. After the lead frames are bonded to the substrates 110, 120, the signal pins and terminals are fixed to the substrates 110, 120, so the frames are cut and removed.

以後、上記信号ピンおよび端子は、所定の形態に形成される（例えば、曲げられる）。 Thereafter, the signal pins and terminals are formed (eg, bent) into a predetermined shape.

信号ピンおよび端子が形成されると、信号ピンおよび端子の絶縁のために絶縁材料がモールドされる（Ｓ１５０）。Ｓ１５０ステップが行われることで、両面冷却型パワーモジュールに備えられるサブモジュール１０の製造が完了する。 Once the signal pins and terminals are formed, an insulating material is molded to insulate the signal pins and terminals (S150). By performing step S150, the manufacturing of the sub-module 10 provided in the double-sided cooling power module is completed.

例えば、両面冷却型パワーモジュール１（図１３ｂ参照）には、複数のサブモジュール１０が備えられる。 For example, a double-sided cooled power module 1 (see FIG. 13b) is provided with a plurality of sub-modules 10 .

複数のサブモジュール１０の両面にヒートシンクが組立てられ（Ｓ１６０）、その結果、両面冷却型パワーモジュール１（図１３ｂ参照）が製造される。 Heat sinks are assembled on both sides of the plurality of sub-modules 10 (S160), and as a result, a double-sided cooled power module 1 (see FIG. 13b) is manufactured.

以下、図４～図１３ｂを参照して、両面冷却型パワーモジュールの製造過程をより具体的に説明する。 Hereinafter, the manufacturing process of the double-sided cooling power module will be described in more detail with reference to FIGS. 4 to 13b.

図４～図１３ｂは、図３に図示された両面冷却型パワーモジュールの製造過程を各ステップ別に示す例示図である。 4 to 13b are exemplary diagrams showing each step of the manufacturing process of the double-side cooled power module shown in FIG.

図４を参照すると、下面基板に該当する第２基板１２０の上面には、複数の金属プレート１２２～１２４、１２６が形成される。 Referring to FIG. 4, a plurality of metal plates 122-124 and 126 are formed on the upper surface of a second substrate 120 corresponding to a lower substrate.

図２で上述したように、第２基板１２０の上面には、パワー素子１００のゲート電極１０２と接合される金属プレート１２２、エミッタ電極１０３と接合される金属プレート１２３、およびコレクタ電極１０４と連結されるようにスペーサ１３１と接合される金属プレート１２４が形成される。また、第２基板１２０の上面には、信号ピンおよび端子と接合される少なくとも１つの金属プレート１２６が形成される。少なくとも１つの金属プレート１２６は、金属プレート１２３、１２４と連結されるか、金属プレート１２３、１２４と離隔された形態を有することができる。 As described above with reference to FIG. 2, the upper surface of the second substrate 120 is connected to the metal plate 122 connected to the gate electrode 102 of the power device 100, the metal plate 123 connected to the emitter electrode 103, and the collector electrode 104. A metal plate 124 is formed to be bonded with the spacer 131 as shown. At least one metal plate 126 is formed on the upper surface of the second substrate 120 to be bonded with signal pins and terminals. At least one metal plate 126 may be connected to the metal plates 123 and 124 or separated from the metal plates 123 and 124 .

一方、ゲート電極１０２と接合される金属プレート１２２は、一部がゲート電極１０２と接合され、他の一部は信号ピンまたは端子と接合される。すなわち、金属プレート１２２は、ゲート電極１０２と信号ピン（または端子）とを電気的に連結させることができる。よって、従来のパワーモジュール１に備えられるワイヤなしでも、ゲート電極１０２と信号ピンとを連結させることができる。 On the other hand, the metal plate 122 bonded to the gate electrode 102 is partly bonded to the gate electrode 102 and partly bonded to a signal pin or terminal. That is, the metal plate 122 may electrically connect the gate electrode 102 and the signal pin (or terminal). Therefore, the gate electrode 102 and the signal pin can be connected without the wires provided in the conventional power module 1 .

一方、信号ピンおよび端子と接合される少なくとも１つの金属プレート１２６には、上記信号ピンおよび端子を通じて電流が流れることで熱が発生する。この場合、セラミック基板１２１と金属プレート１２６との間の熱膨張係数の差によって応力（stress）が発生し、このような応力によって、第２基板１２０が曲がったり歪んで第２基板１２０または部品の破損や損傷が発生することがある。 On the other hand, the at least one metal plate 126 bonded to the signal pins and terminals generates heat when current flows through the signal pins and terminals. In this case, stress is generated due to the difference in coefficient of thermal expansion between the ceramic substrate 121 and the metal plate 126, and the stress causes the second substrate 120 to bend or distort, resulting in damage to the second substrate 120 or components. Breakage or damage may occur.

これを防止するためには、信号ピンおよび端子と接合される金属プレート１２６には、複数のスリット１２７が形成される。上記スリット１２７によって、図４に示すように、金属プレート１２６は、複数のプレートに区分されるか、金属プレート１２６に所定の方向に複数の隙間が形成される。 In order to prevent this, a plurality of slits 127 are formed in the metal plate 126 joined with the signal pins and terminals. As shown in FIG. 4, the metal plate 126 is divided into a plurality of plates by the slits 127, or a plurality of gaps are formed in the metal plate 126 in a predetermined direction.

このようなスリット１２７によって、金属プレート１２６の膨張時に上記隙間の幅が減少して第２基板１２０の曲がりや歪みが最小になり、その結果、第２基板１２０または部品の破損や損傷を防止することができる。 Due to the slits 127, the width of the gap is reduced when the metal plate 126 expands, thereby minimizing bending and distortion of the second substrate 120, thereby preventing breakage and damage of the second substrate 120 or parts. be able to.

図示されていないが、上面基板に該当する第１基板１１０の下面にも上記金属プレート１２６と対応する金属プレートが備えられ、上記金属プレートにも複数のスリットが形成される。 Although not shown, the lower surface of the first substrate 110 corresponding to the upper substrate is also provided with a metal plate corresponding to the metal plate 126, and the metal plate is also formed with a plurality of slits.

図５を参照すると、金属プレート１２２～１２４、１２６上に接合材料が印刷される。接合材料が印刷されることで、第２基板１２０上には、接合部１３３～１３７が形成される。上述したように、上記接合材料は、銀（Ag）またははんだ（solder）などの物質を含むことができる。 Referring to FIG. 5, bonding material is printed on the metal plates 122-124,126. By printing the bonding material, bonding portions 133 to 137 are formed on the second substrate 120 . As noted above, the bonding material may include substances such as silver (Ag) or solder.

接合部１３３～１３７は、図２で上述したように、パワー素子１００のゲート電極１０２を金属プレート１２２に接合させる接合部１３３、エミッタ電極１０３を金属プレート１２３に接合させる接合部１３４、コレクタ電極１０４を金属プレート１２４に接合させる接合部１３５を含むことができる。また、接合部１３３～１３７は、ダイオードを金属プレート１２３、１２４に接合させる接合部１３６と、リードフレーム（信号ピンおよび端子）を金属プレート１２６に接合させる接合部１３７と、を含むことができる。 The junctions 133 to 137 are, as described above with reference to FIG. can include a bond 135 that bonds the to the metal plate 124 . Also, the joints 133 - 137 can include a joint 136 that bonds the diodes to the metal plates 123 , 124 and a joint 137 that bonds the leadframe (signal pins and terminals) to the metal plate 126 .

このような接合部１３３～１３７は、以後の焼結工程において圧力および熱が加えられることで、パワー素子１００、ダイオードおよびリードフレームを、第１基板１１０と第２基板１２０との間に接合させることができる。 Such joints 133 to 137 are subjected to pressure and heat in the subsequent sintering process, thereby joining the power device 100, the diode and the lead frame between the first substrate 110 and the second substrate 120. be able to.

図６および図７を参照すると、接合材料が第１基板１１０および第２基板１２０に印刷された後、部品（パワー素子１００ａ、１００ｂ、ダイオード１５０およびリードフレーム１６０）が、第１基板１１０および第２基板１２０上に実装される。 6 and 7, after the bonding material is printed on the first substrate 110 and the second substrate 120, the components (power devices 100a, 100b, the diode 150 and the lead frame 160) are attached to the first substrate 110 and the second substrate 120. 2 mounted on the substrate 120 .

部品が実装された後、焼結工程が行われることで、第１基板１１０部品および第２基板１２０が相互に接合される。特に、本発明の実施例に係るサブモジュール１０は、ワイヤが備えられないので、１回の焼結工程だけで基板１１０、１２０および部品を接合させることができる。 After the components are mounted, a sintering process is performed to bond the components on the first substrate 110 and the second substrate 120 to each other. In particular, since the sub-module 10 according to the embodiment of the present invention does not have wires, the substrates 110 and 120 and the components can be joined together by a single sintering process.

図８を参照すると、基板１１０、１２０および部品が接合された後、第１基板１１０と第２基板１２０との間に絶縁材料がモールドされることで、絶縁部１４０が形成される。例えば、上記絶縁部１４０は、ＥＭＣ（Epoxy Molding Compound）などの物質を含むことができる。ＥＭＣは、シリカ、エポキシ樹脂、フェノール樹脂、カーボンブラック、難燃剤などの複数の原料が含まれている物質であってもよい。 Referring to FIG. 8, after bonding the substrates 110 and 120 and the component, an insulating material is molded between the first substrate 110 and the second substrate 120 to form the insulating portion 140 . For example, the insulating part 140 may include a material such as EMC (Epoxy Molding Compound). The EMC may be a material containing multiple ingredients such as silica, epoxy resin, phenolic resin, carbon black, flame retardants, and the like.

絶縁部１４０が形成されることで、パワー素子１００ａ、１００ｂの絶縁耐圧が確保され、外部の水分や異物質、衝撃等からパワー素子１００ａ、１００ｂが効果的に保護される。 By forming the insulating portion 140, the dielectric breakdown voltage of the power elements 100a and 100b is ensured, and the power elements 100a and 100b are effectively protected from external moisture, foreign matter, impact, and the like.

図９～図１１を参照すると、リードフレーム１６０のうち、信号ピン１６１および端子１６２を除いたフレーム部分が除去（カット）され、信号ピン１６１および端子１６２は、予め設定され形態に形成される（曲げられる）。 9 to 11, the lead frame 160 is removed (cut) except for the signal pin 161 and the terminal 162, and the signal pin 161 and the terminal 162 are formed in a predetermined shape (see FIGS. 9 to 11). bent).

信号ピン１６１および端子１６２が形成された後、信号ピン１６２および端子１６２の絶縁を確保するために絶縁材料がモールドされることで、信号ピンおよび端子絶縁部１７０が形成される。 After signal pins 161 and terminals 162 are formed, an insulating material is molded to ensure insulation of signal pins 162 and terminals 162 to form signal pin and terminal insulators 170 .

信号ピンおよび端子絶縁部１７０が形成されることで、サブモジュール１０が製造される。 The sub-module 10 is manufactured by forming the signal pins and the terminal insulating portion 170 .

図１２ａ～図１３ｂを参照すると、複数のサブモジュール１０ａ～１０ｃは、下面ヒートシンク２０および上面ヒートシンク３０との間に取り付けられ、これによってパワーモジュール１が製造される。本明細書では、パワーモジュール１が３つのサブモジュール１０ａ～１０ｃを含むが、パワーモジュール１に含まれるサブモジュールの数は、これに限定されるものではない。 Referring to FIGS. 12a-13b, a plurality of sub-modules 10a-10c are mounted between a bottom heat sink 20 and a top heat sink 30, thereby manufacturing a power module 1. FIG. Although the power module 1 includes three sub-modules 10a to 10c in this specification, the number of sub-modules included in the power module 1 is not limited to this.

具体的には、図１２ａを参照すると、下面ヒートシンク２０は、サブモジュール１０ａ～１０ｃが安着される安着部２１０ａ～２１０ｃ、上面ヒートシンク３０と取り付けられるための複数の取付溝２３０を含むことができる。 Specifically, referring to FIG. 12a, the lower heat sink 20 may include seating portions 210a-210c on which the sub-modules 10a-10c are seated, and a plurality of mounting grooves 230 for attaching the upper heat sink 30. can.

下面ヒートシンク２０は、両面冷却型パワーモジュール１の下部を形成し、サブモジュール１０ａ～１０ｃの下部を外部から遮蔽することができる。 The lower heat sink 20 forms the lower part of the double-sided cooling power module 1 and can shield the lower parts of the sub-modules 10a to 10c from the outside.

一実施例によれば、下面ヒートシンク２０および上面ヒートシンク３０は、内部に冷却水が流動する空間を形成することができる。例えば、上記冷却水は、冷却水流入口（図示されない）を介して下面ヒートシンク２０の空間に流入し、下面ヒートシンク２０に形成された第１通路２２１を介して上面ヒートシンク３０の空間に流動することができる。上面ヒートシンク３０内の空間に流動された冷却水は、第２通路２２２を介して下面ヒートシンク２０に流動し、下面ヒートシンク２０に流動された冷却水は、冷却水流出口（図示されない）を介して外部に流出することができる。 According to one embodiment, the bottom heat sink 20 and the top heat sink 30 may form a space in which cooling water flows. For example, the cooling water may flow into the space of the lower heat sink 20 through a cooling water inlet (not shown) and flow into the space of the upper heat sink 30 through the first passage 221 formed in the lower heat sink 20 . can. The cooling water that flows into the space inside the upper heat sink 30 flows to the lower heat sink 20 through the second passage 222, and the cooling water that flows to the lower heat sink 20 flows through a cooling water outlet (not shown) to the outside. can flow into

よって、サブモジュール１０ａ～１０ｃから発生する熱は、熱伝導現象によって上面ヒートシンク３０および下面ヒートシンク２０に伝導される。上面ヒートシンク３０および下面ヒートシンク２０の内部の空間に冷却水が流れる場合、上面ヒートシンク３０および下面ヒートシンク２０に伝導された熱が冷却水で再伝導されることで、上面ヒートシンク３０および下面ヒートシンク２０の温度が低下する。その後、サブモジュール１０ａ～１０ｃの熱が上面ヒートシンク３０および下面ヒートシンク２０に再伝導されることで、サブモジュール１０ａ～１０ｃの温度が低下する。 Therefore, the heat generated from the sub-modules 10a to 10c is conducted to the upper heat sink 30 and the lower heat sink 20 by thermal conduction phenomenon. When cooling water flows in the space inside the upper heat sink 30 and the lower heat sink 20, the heat conducted to the upper heat sink 30 and the lower heat sink 20 is reconducted by the cooling water, so that the temperature of the upper heat sink 30 and the lower heat sink 20 increases. decreases. The heat of the sub-modules 10a-10c is then re-conducted to the top heat sink 30 and the bottom heat sink 20, thereby reducing the temperature of the sub-modules 10a-10c.

図１２ｂを参照すると、下面ヒートシンク２０の安着部２１０ａ～２１０ｃ上に放熱材料が印刷される。例えば、放熱材料は、サーマルグリス、熱伝導性接着剤などのＴＩＭ（Thermal Interface Material）を含むことができる。上記放熱材料が印刷されることで放熱部２１１ａ～２１１ｃが形成される。図示されていないが、放熱部の上面ヒートシンク３０にも対応するように形成される。 Referring to FIG. 12b, a heat dissipating material is printed on the seating portions 210a-210c of the bottom heat sink 20. Referring to FIG. For example, the heat dissipation material can include a TIM (Thermal Interface Material) such as thermal grease, thermally conductive adhesive, and the like. The heat radiation portions 211a to 211c are formed by printing the heat radiation material. Although not shown, it is also formed to correspond to the upper heat sink 30 of the heat radiating portion.

図１２ｃを参照すると、放熱材料が印刷された後、サブモジュール１０ａ～１０ｃが安着部２１０ａ～２１０ｃ上に安着（または実装）される。 Referring to FIG. 12c, after the heat dissipation material is printed, the sub-modules 10a-10c are seated (or mounted) on the seating portions 210a-210c.

図１３ａを参照すると、サブモジュール１０ａ～１０ｃが安着部２１０ａ～２１０ｃ上に装着された後、上面ヒートシンク３０が組み立てられる。上面ヒートシンク３０は、両面冷却型パワーモジュール１の上部を形成し、サブモジュール１０ａ～１０ｃの上部を外部から遮蔽することができる。 Referring to FIG. 13a, the top heat sink 30 is assembled after the sub-modules 10a-10c are mounted on the seating portions 210a-210c. The upper heat sink 30 forms the upper part of the double-sided cooling power module 1 and can shield the upper parts of the sub-modules 10a to 10c from the outside.

例えば、上面ヒートシンク３０は、下面ヒートシンク２０の取付溝２３０と対応する取付溝３１０が形成される。上面ヒートシンク３０に形成された取付溝３１０を介して、取付ねじ４０は、上面ヒートシンク３０を通過して下面ヒートシンク２０の取付溝２３０に挿入および固定される。これによって、上面ヒートシンク３０が下面ヒートシンク２０と組立てられる。 For example, the top heat sink 30 is formed with mounting grooves 310 corresponding to the mounting grooves 230 of the bottom heat sink 20 . The mounting screws 40 pass through the upper heat sink 30 via the mounting grooves 310 formed in the upper heat sink 30 and are inserted into and fixed to the mounting grooves 230 of the lower heat sink 20 . The top heat sink 30 is thereby assembled with the bottom heat sink 20 .

上記した詳細な説明は、制限的に解釈されてはならず、例示的なものであると考慮されるべきである。本発明の範囲は、添付された請求の範囲の合理的解釈によって決定されるべきであり、本発明の等価的範囲内における全ての変更は、本発明の範囲に含まれる。 The above detailed description should not be construed as limiting, but rather as illustrative. The scope of the invention should be determined by reasonable interpretation of the appended claims, and all changes that come within the equivalent scope of the invention are included in the scope of the invention.

Claims (11)

複数の金属プレートが一面に形成された第１基板と、
前記第１基板と離隔され、前記第１基板の複数の金属プレートと対向する一面に複数の金属プレートが形成された第２基板と、
前記第１基板と前記第２基板との間に備えられ、ＩＧＢＴ(insulated gate bipolar mode transistor)半導体素子を有する複数のパワー素子と、
前記複数のパワー素子のそれぞれの第１面に形成され、ゲート(gate)電極およびエミッタ(emitter)電極を有する第１電極と、
前記複数のパワー素子のそれぞれの第２面に形成され、コレクタ(collector)電極を有する第２電極と、を有し、
前記複数のパワー素子は、
前記第１電極が前記第２基板の金属プレートのうちの前記ゲート電極および前記エミッタ電極がそれぞれ接続される金属プレートと接合され、前記第２電極が前記第１基板の金属プレートのうちの前記コレクタ電極が接続される金属プレートと接合される第１パワー素子と、
前記第１電極が前記第１基板の金属プレートのうちの前記ゲート電極および前記エミッタ電極がそれぞれ接続される金属プレートと接合され、前記第２電極が前記第２基板の金属プレートのうちの前記コレクタ電極が接続される金属プレートと接合される第２パワー素子と、を有し、
前記第１基板および前記第２基板のそれぞれの金属プレートのうちの信号ピンおよび端子が接合される金属プレートは、少なくとも１つの隙間を有するようにする少なくとも１つのスリットが形成され、前記少なくとも１つのスリットによって複数の金属プレートに区分される、パワーモジュール。 a first substrate having a plurality of metal plates formed on one surface;
a second substrate separated from the first substrate and having a plurality of metal plates formed on a surface facing the plurality of metal plates of the first substrate;
a plurality of power devices provided between the first substrate and the second substrate and having IGBT (insulated gate bipolar mode transistor) semiconductor devices;
a first electrode formed on a first surface of each of the plurality of power elements and having a gate electrode and an emitter electrode;
a second electrode formed on a second surface of each of the plurality of power elements and having a collector electrode;
The plurality of power elements are
The first electrode is joined to the metal plate of the metal plates of the second substrate to which the gate electrode and the emitter electrode are respectively connected, and the second electrode is joined to the collector of the metal plates of the first substrate. a first power element bonded to the metal plate to which the electrode is connected;
The first electrode is joined to the metal plate of the metal plates of the first substrate to which the gate electrode and the emitter electrode are respectively connected, and the second electrode is joined to the collector of the metal plates of the second substrate. a second power element bonded to the metal plate to which the electrode is connected ;
Of the metal plates of each of the first substrate and the second substrate, the metal plates to which the signal pins and terminals are bonded are formed with at least one slit so as to have at least one gap. A power module that is divided into multiple metal plates by slits . 前記第１基板および第２基板のそれぞれに形成された複数の金属プレートのうちの前記ゲート電極が接続される金属プレートは、前記ゲート電極と一部が接合され、他の一部が前記信号ピンまたは端子と接合される、請求項１に記載のパワーモジュール。 Among the plurality of metal plates formed on each of the first substrate and the second substrate, a metal plate to which the gate electrode is connected is partly joined to the gate electrode and is partly connected to the signal pin. or joined with terminals. 前記パワーモジュールは、前記ゲート電極と前記信号ピンまたは端子とを連結するワイヤを備えていない、請求項２に記載のパワーモジュール。 3. The power module according to claim 2, wherein said power module does not have wires connecting said gate electrodes and said signal pins or terminals. 前記第１基板の複数の金属プレートのうちのいずれか１つは、前記第１パワー素子のコレクタ電極に接続される金属プレートと前記第２パワー素子のエミッタ電極に接続される金属プレートとにより提供され、
前記いずれかの金属プレートは、前記第１パワー素子のコレクタ電極と前記第２パワー素子のエミッタ電極とを電気的に連結する、請求項１に記載のパワーモジュール。 Any one of the plurality of metal plates of the first substrate is provided by a metal plate connected to the collector electrode of the first power element and a metal plate connected to the emitter electrode of the second power element. is,
2. The power module according to claim 1, wherein one of said metal plates electrically connects a collector electrode of said first power element and an emitter electrode of said second power element. 前記コレクタ電極にはスペーサが接合され、
前記いずれか１つの金属プレートは、前記第１パワー素子のコレクタ電極に接合されたスペーサおよび前記第２パワー素子のエミッタ電極と接合される、請求項４に記載のパワーモジュール。 A spacer is bonded to the collector electrode,
5. The power module according to claim 4, wherein said any one metal plate is joined with a spacer joined to a collector electrode of said first power element and an emitter electrode of said second power element. 前記第１基板の他面および前記第２基板の他面のそれぞれに金属プレートがさらに形成される、請求項１に記載のパワーモジュール。 2. The power module according to claim 1, further comprising a metal plate formed on each of the other surface of the first substrate and the other surface of the second substrate. パワーモジュールの製造方法であって、
第１基板と第２基板とが対向する一面のそれぞれに接合材料を印刷するステップと、
前記第１基板と前記第２基板との間に複数のパワー素子を実装するステップと、
前記第１基板、前記第２基板および前記複数のパワー素子が接合されるように焼結（sintering）するステップと、を有し、
前記複数のパワー素子は、第１面に形成される第１電極および前記第１面の反対面である第２面に形成される第２電極を有し、
前記実装するステップは、
前記複数のパワー素子のうちの第１パワー素子を、第１面に形成された第１電極が前記第２基板を向くように実装するステップと、
前記複数のパワー素子のうちの第２パワー素子を、第１面に形成された第１電極が前記第１基板を向くように実装するステップと、を有する、パワーモジュールの製造方法。 A method for manufacturing a power module,
printing a bonding material on each of opposing surfaces of the first substrate and the second substrate;
mounting a plurality of power devices between the first substrate and the second substrate;
sintering such that the first substrate, the second substrate and the plurality of power devices are bonded together;
The plurality of power elements have a first electrode formed on a first surface and a second electrode formed on a second surface opposite to the first surface,
The implementing step includes:
mounting a first power element among the plurality of power elements such that a first electrode formed on a first surface faces the second substrate;
and mounting a second power element among the plurality of power elements such that a first electrode formed on a first surface faces the first substrate. 前記複数のパワー素子は、ＩＧＢＴ半導体素子を有し、
前記第１電極は、ゲート電極およびエミッタ電極を有し、
前記第２電極は、コレクタ電極を有する、請求項７に記載のパワーモジュールの製造方法。 The plurality of power elements have IGBT semiconductor elements,
the first electrode has a gate electrode and an emitter electrode;
8. The method of manufacturing a power module according to claim 7 , wherein said second electrode has a collector electrode. 前記実装するステップは、前記第１基板と前記第２基板との間に、前記複数のパワー素子、複数のダイオード、ならびに信号ピンおよび端子を有するリードフレームを実装するステップを有する、請求項８に記載のパワーモジュールの製造方法。 9. The method of claim 8 , wherein said mounting step comprises mounting a lead frame having said plurality of power devices, a plurality of diodes, and signal pins and terminals between said first substrate and said second substrate. A method for manufacturing the described power module. 前記焼結するステップは、前記第１基板および前記第２基板のそれぞれの第１金属プレートが、前記複数のパワー素子のうちのいずれか１つのゲート電極と一部が接合され、前記信号ピンまたは端子と他の一部が接合されるように焼結するステップを有する、請求項９に記載のパワーモジュールの製造方法。 In the sintering step, the first metal plates of the first substrate and the second substrate are partially joined to the gate electrode of any one of the plurality of power elements, and the signal pin or 10. The method of manufacturing a power module according to claim 9 , comprising a step of sintering such that the terminals and other parts are joined together. 前記焼結された第１基板と第２基板との間に絶縁材料がモールドされるステップと、
前記リードフレームのうち、前記信号ピンおよび端子を除いたフレームがカットされ、前記信号ピンおよび端子が予め設定された形態に形成されるステップと、
前記信号ピンおよび端子の絶縁のための絶縁材料がモールドされるステップと、をさらに有する、請求項９に記載のパワーモジュールの製造方法。 molding an insulating material between the sintered first and second substrates;
a step of cutting a lead frame excluding the signal pin and the terminal, and forming the signal pin and the terminal into a predetermined shape;
10. The method of manufacturing a power module according to claim 9 , further comprising molding an insulating material for insulating the signal pins and terminals.
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