JPH11176870A - Semiconductor device and manufacture thereof - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device, which is able to sufficiently absorb the stresses applied on a conductor pattern accompanied by temperature changes without restriction by manufacturing facilities and the like. SOLUTION: A conductor pattern 16 is formed between a first insulating layer 14, provided at one-surface side of a semiconductor element 10 where an electrode 12 is formed, and a second insulating layer 18. One end part of the conductor pattern 16 is connected electrically to the electrode terminal 12 through a via 20 which penetrates the first insulating layer 14. The other end part of the conductor pattern 16 is connected electrically to an outer connecting terminal 22 provided through penetrating a second insulating layer 18. The respective first insulating layer 14 and the second insulating layer 18 are formed of elastic devices, whose Young' modulus under a room temperature becomes 10<8> Pa or less, so that the conductor pattern 16 can be extended or shortened in the direction of the layer corresponding to the expansion of the respective first insulating layer 14 and the second insulating layer 18 caused by the temperature change. Furthermore, the respective conductor pattern 16 is bent and formed on the first insulating layer 14, so that the pattern becomes longer than the straight-line distance between the via 20 and the external connecting terminal 22.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method of manufacturing the same. One end of the conductor pattern is electrically connected to the electrode terminal via a via penetrating the first insulating layer, and the other end of the conductor pattern is connected to the second terminal. The present invention relates to a semiconductor device electrically connected to an external connection terminal provided through an insulating layer and a method for manufacturing the same.

[0002]

2. Description of the Related Art As a semiconductor device, there is a semiconductor device having substantially the same size as a semiconductor element 100, that is, a so-called chip size package, as shown in FIG. In the semiconductor device shown in FIG. 12, electrode terminals 102, 10
2 and the external connection terminals 104, 104 provided on the semiconductor element 100
106.. Are electrically connected. As shown in the partial cross-sectional view of FIG.
On one surface side of the semiconductor element 100 on which the electrode terminals 102 are provided, the first insulating layer 108 made of an elastic material such as an elastomer and a second insulating layer 110 made of a polyimide film or the like are sandwiched. Furthermore, the conductor pattern 106
One end is connected to an external connection terminal 104 such as a solder ball penetrating the second insulating layer 110, and the other end is outside the side end of the first insulating layer 108 and the second insulating layer 110. It is bent in the shape of a letter and connected to the electrode terminal 102.

[0003]

The semiconductor element 100 made of silicon and the first insulating layer 10 made of resin are used.
8 and the second insulating layer 110 have different physical properties such as thermal expansion coefficient. In addition, when the semiconductor device is mounted on a mounting substrate, physical properties such as a coefficient of thermal expansion between the mounting substrate and components of the semiconductor device such as the semiconductor element 100 are different. In addition, the semiconductor device is subjected to a temperature cycle test at a temperature change of, for example, -65 to + 125 ° C in order to guarantee its reliability. When such a temperature change is applied to a semiconductor device or a semiconductor device mounted on a mounting substrate, expansion and contraction due to a difference in physical properties between constituent members of the semiconductor device and a mounting substrate or the like is applied to the conductor pattern 106 as stress. The stress is caused by the S-shaped bent portion 112 formed at the other end of the conductor pattern 106.
Is absorbed by the expansion and contraction of However, the bend 11
In the case where the stress applied to the conductor pattern 106 is absorbed only by the expansion and contraction of No. 2, the stress that can be absorbed is determined by the amount of expansion and contraction of the bent portion 112. Since the bending of the conductor pattern 106 is reduced and the amount of expansion and contraction is reduced, the stress applied to the conductor pattern 106 may not be sufficiently absorbed. When such a situation occurs, stress concentrates near the boundary between the bent portion 112 and the portion of the conductive pattern 106 sandwiched between the first insulating layer 108 and the second insulating layer 110, and the conductive pattern 106 is disconnected. It may be easier.

On the other hand, in order to sufficiently absorb the stress applied to the conductor pattern 106, the first insulating layer 10 made of an elastic material is used.
When the bend 8 is made thicker and the bend of the bend portion 112 is increased,
It is easy to be restricted by semiconductor device manufacturing facilities and the like. Also,
When the semiconductor element 100 becomes large and the conductive pattern 106 becomes long, for example, the bent portion 112 alone cannot absorb the stress applied to the conductive pattern 106. SUMMARY OF THE INVENTION It is an object of the present invention to provide a semiconductor device which can sufficiently absorb stress applied to a conductor pattern due to a temperature change, and which is not easily restricted by a manufacturing apparatus or the like, and a method of manufacturing the same.

[0005]

According to the present invention, in order to solve the above-mentioned problems, a stress applied to a conductor pattern due to a temperature change is sandwiched between a first insulating layer and a second insulating layer. As a result of considering that it is effective to absorb at the conductor pattern portion, it was found that the conductor pattern portion bent between the first insulating layer and the second insulating layer formed of an elastic body having a low Young's modulus was bent. By forming the portion, the inventors have found that the bent portion can expand and contract in accordance with the stress applied to the conductor pattern, and have reached the present invention. That is, according to the present invention, a conductor pattern is formed between a first insulation layer and a second insulation layer provided on one surface side of a semiconductor element on which an electrode terminal is formed, and one end of the conductor pattern is formed. Are electrically connected to the electrode terminals via vias penetrating the first insulating layer, and the other end of the conductor pattern is electrically connected to an external connection terminal provided through the second insulating layer. Wherein each of the first insulating layer and the second insulating layer responds to expansion and contraction in a layer direction due to a temperature change of the first insulating layer and the second insulating layer. The conductor pattern is formed of an elastic body having a Young's modulus at room temperature of 10 ⁸ Pa or less so that the conductor pattern can expand and contract in the layer direction, and each of the conductor patterns is formed between the via and an external connection terminal. The first insulation so as to be longer than the linear distance of Lying in the semiconductor device according to claim being formed is bent upward.

Further, the present invention provides a semiconductor device, wherein a conductor pattern is formed between a first insulating layer and a second insulating layer provided on one surface side on which electrode terminals of a semiconductor element are formed. An external connection terminal, one end of which is electrically connected to the electrode terminal via a via penetrating the first insulating layer, and the other end of the conductor pattern is provided penetrating the second insulating layer. When manufacturing a semiconductor device electrically connected to the first insulating layer, one end of the conductive pattern is connected to a via penetrating the first insulating layer, and the other end of the conductive pattern is connected to the second insulating layer. Forming a pattern formed body having a recess for an external connection terminal formed therethrough, and then laminating the pattern formed body on one surface side on which an electrode terminal of a semiconductor element is formed. Vias and the semiconductor In a method of manufacturing a semiconductor device characterized by electrically connecting each of the electrode terminals of the child.

According to the semiconductor device of the present invention, since the first insulating layer and the second insulating layer are formed of an elastic body having a low Young's modulus, the first insulating layer and the second insulating layer are formed in a portion of the conductor pattern sandwiched between the two insulating layers. The bent portion can expand and contract with respect to a change in stress applied based on a difference in expansion and contraction of the semiconductor element and the first insulating layer due to a change in temperature. For this reason, if a sufficient amount of bending is formed in the portion of the conductor pattern sandwiched between the two insulating layers, even if the semiconductor element is enlarged while keeping the thickness of the first insulating layer, the conductor pattern based on temperature change can be used. Can be sufficiently absorbed.

[0008]

FIG. 1 shows an example of a semiconductor device according to the present invention. The semiconductor device shown in FIG.
A conductor pattern 16 is formed between a first insulating layer 14 and a second insulating layer 18 that are stacked on one surface on which the electrode terminals 12 are provided. One end of the conductor pattern 16 is electrically connected to the electrode terminal 12 by a via 20 penetrating the first insulating layer 14, and the other end is provided through the second insulating layer 18. It is electrically connected to the external connection terminal 22. As the external connection terminal 22, a solder ball made of solder, a solder ball having a core made of a copper material or the like formed at the center, or the like is used.

In the semiconductor device shown in FIG. 1, each of the first insulating layer 14 and the second insulating layer 18 has a Young's modulus of 10 ⁸ Pa or less at room temperature, preferably in the range of room temperature to 260 ° C. Is 10 ⁴ to 10 ⁷ Pa, particularly preferably −
It is important that the elastic material has a Young's modulus of about 10 ⁷ Pa even at 50 ° C. In this manner, the conductor pattern 16 formed between the elastic bodies having a low Young's modulus is formed.
When a temperature change targeted for reliability of the semiconductor device, for example, a temperature change of −65 to + 125 ° C. in a temperature cycle test is applied to the semiconductor device, the conductor pattern 16 is formed in accordance with expansion and contraction of the first insulating layer 16 and the like. Can expand and contract. here,
When each of the first insulating layer 14 and the second insulating layer 18 is formed of an elastic body having a Young's modulus exceeding 10 ⁸ Pa at room temperature, the first insulating layer 14 and the second insulating layer 18 are not affected by the temperature change even if the temperature change is applied to the semiconductor device.
It becomes difficult for the conductor pattern 16 to expand and contract according to expansion and contraction of the insulating layer 14 and the like. As such an elastic body having a low Young's modulus, an incomplete elastic body in which all of the deformation does not return to its original state even when the stress causing the deformation is removed is preferable. Specifically, a silicone rubber-based elastomer or a polyolefin-based elastomer is preferably used. Can be mentioned.

Further, the first insulating layer 14 having a low Young's modulus
Each horizontal portion 26 of the entire conductor pattern 16 formed between the insulating layers 18 is formed substantially parallel to one surface of the semiconductor element 10 as shown in FIG. , Are bent in the left-right direction. This bend is preferably a smooth curve because stress is dispersed. Here, as shown in FIG.
If there is at least one conductor pattern 106 that connects the zero electrode terminal 102 and the external connection terminal 104 with a straight line, the degree of temperature change that the semiconductor device can receive is limited to the linear conductor pattern 1.
06 is restricted to a temperature change within a range that can be endured. The length of the conductive pattern 16 formed by bending in this manner is:
As described above, the length is set so as to be able to absorb expansion and contraction of the first insulating layer 14 and the like in the temperature change adopted in the temperature cycle test. At this time, when a temperature change targeted for reliability of the semiconductor device is applied to the semiconductor device mounted on the mounting substrate, the thickness direction of the first insulating layer and the expansion and contraction of the mounting substrate can be absorbed. It is preferable to determine the length of the conductor pattern 16, and specifically, it is preferable that the length (L) of the conductor pattern 16 be a length that satisfies the following equation (3).

(Equation 3) In the equation (3), instead of α _b , (α _b −α _s )
May be used. This α _s is the coefficient of thermal expansion of the first insulating layer 14.

As shown in FIG. 3, the semiconductor device shown in FIG. 1 and FIG.
After being formed on the wafer 30 on which the “0” is formed, it can be formed by dicing into individual semiconductor devices. In the method for manufacturing a semiconductor device shown in FIG. 3, first, a first insulating layer 14 is formed on a wafer 30 on which a plurality of semiconductor elements 10 are formed [step of FIG. The first insulating layer 14 has a Young's modulus of 10 ⁸ Pa or less at room temperature, preferably 10 ⁴ to 1 at room temperature to 260 ° C.
It is formed of an elastic material having a Young's modulus of about 10 ⁷ Pa even at 0 ⁷ Pa, particularly preferably at −50 ° C. When the first insulating layer 14 is formed using a thermosetting resin such as a silicone rubber-based elastomer, the first insulating layer 14 can be formed by applying a thermosetting resin on a wafer and then curing the same. Via holes 34 are formed in the first insulating layer 14 by laser or etching or the like so that the electrode terminals 12 of the respective semiconductor elements 10 formed on the wafer 30 are exposed on the bottom surface in the first insulating layer 14. [Step of FIG. 3B]. The peripheral edge portion of the opening of the via hole 34 is preferably formed in a curved surface because stress concentration easily occurs when the peripheral portion is angular.

Next, the electrode terminals 12 in the via holes 34 are formed.
A metal layer 36 is formed on the surface of the first insulating layer 14 including the bottom surface and the inner wall surface where the metal layer 36 is exposed [step of FIG. The metal layer 36 has a desired thickness by forming a thin film metal layer on a metal such as copper by electroless plating and then performing electrolytic plating. In the case of such electroless plating, in order to easily deposit a metal on the surface of the first insulating layer 14 and easily form a thin film metal layer, an inorganic powder such as silicon oxide is contained in a resin for forming the first insulating layer 14. Is preferably blended. The viscosity of the resin and the like can be adjusted by blending the inorganic powder. However, if the amount of the inorganic powder is too large, the Young's modulus of the first insulating layer 14 tends to be high.
It is preferable to set the degree. Incidentally, the thin film metal layer may be formed by a sputtering method. When the thin film metal layer is formed by such a sputtering method, forming the thin film metal layer with a metal such as titanium or palladium can improve the adhesiveness to the first insulating layer 14 and the like.

The metal layer 36 thus formed is patterned by photolithography or the like to form conductor patterns 16, 16,... [Step in FIG. 3 (d)]. As shown in FIG. 2, each of the conductor patterns 16 has a via 20 connected to the electrode terminal 12 of the semiconductor element 10 at one end and an external connection terminal 22 at the other end. A land portion 24 is formed. Further, a horizontal portion 26 connecting the via 20 and the land portion 24 is provided.
Are formed substantially in parallel along one surface of the wafer 30 as shown in FIG. 3D, and are bent in the left-right direction as shown in FIG. It is preferable that the length (L) of the conductor pattern 16 satisfies the expression (3).

Further, the formed conductor patterns 16, 16
After being covered with the second insulating layer 18, the land portion 24 shown in FIG.
Is formed by laser or etching [step of FIG. 3E]. The second insulating layer 18 also has a Young's modulus of 10 ⁸ Pa or less at room temperature, preferably 10 ⁴ to 10 ⁷ Pa at room temperature to 260 ° C., particularly preferably −50 Pa.
It is formed of an elastic body having a Young's modulus of about 10 ⁷ Pa even at ℃. The second insulating layer 18 may be the same resin as the first insulating layer 14 or a different resin. However, it is preferable to form the second insulating layer 18 with a resin having good adhesion to the first insulating layer 14 from the viewpoint of preventing separation of both layers. Thereafter, after the external connection terminals 22 such as solder balls are mounted in the external connection terminal concave portions 38, the wafer 30 is cut into predetermined pieces, for example, at the positions indicated by alternate long and short dash lines A shown in FIG. The semiconductor device shown in FIG. 1 can be obtained [step of FIG. The mounting of the external connection terminals 22 such as solder balls may be performed after the wafer 30 is cut at a predetermined position into individual pieces.

In the semiconductor device and the method of manufacturing the semiconductor device shown in FIG. 3, the first insulating layer 14 is formed by applying a resin such as a silicone rubber-based elastomer on the wafer 30, but as shown in FIG. Alternatively, the first insulating layer 14 may be bonded to the semiconductor element 10 or the wafer 30 by the adhesive layer 28. In this case, the first insulating layer 14 is formed on the adhesive film.
Is preferably used. In particular, when the first insulating layer 14 is formed using a thermosetting resin, a two-layer structure film in which a primer of a thermosetting resin is formed on an adhesive film can be used.

The semiconductor device shown in FIGS. 1 to 4 is manufactured by a method in which respective portions of a pattern formed body including the first insulating layer 14 and the like are sequentially formed on a wafer 30. , There is a possibility that many of the finally obtained semiconductor devices will be defective. For this reason, it is preferable that a pattern forming body is formed in advance, and only the pattern forming body having no defect is bonded on the wafer 30 and then diced. FIG. 5 shows the semiconductor device thus obtained. In this semiconductor device, the pattern forming body 40 and the semiconductor element 10 are bonded by an adhesive layer 32. In the pattern forming body 40, the conductor pattern 16 formed on the first insulating layer 14 along one surface of the semiconductor element 10 is formed by the second insulating layer 18.
Covered by Further, the conductor pattern 16
Is a via 20 whose one end penetrates through the first insulating layer 14.
The other end is connected to the external connection terminal 22 penetrating the second insulating layer 18. The vias 20 of the pattern forming body 40 are formed by filling plating metal into via holes formed in the first insulating layer 14 as described later.
It is connected to the. Further, the adhesive layer 32 is preferably formed by an adhesive made of a thermoplastic resin.
The type and physical properties of the resin forming the first insulating layer 14 and the second insulating layer 18 in FIG. 5, or the shape and length of the conductor pattern 16 are the same as those in the semiconductor device shown in FIGS. Therefore, detailed description is omitted here.

The semiconductor device shown in FIG. 5 can be manufactured by bonding the pattern forming body 40 obtained by the method shown in FIG. 6 to the wafer 30 by the method shown in FIG. First, when manufacturing the pattern forming body 40, a three-layer structure film in which the first insulating layer 14 and a metal foil 42 such as a copper foil are bonded by an adhesive layer 32 is formed [Step of FIG. ]. The adhesive layer 32 is preferably formed of a thermoplastic adhesive because it is chemically stable to etching and plating and has a sufficient adhesive ability even after receiving a heat history. Via holes 34 are formed in the first insulating layer 14 and the adhesive layer 32 in the obtained three-layer structure film by laser or etching [step of FIG. 6B]. The bottom surface of the via hole 34 is formed by the surface of the metal foil 42.

A metal foil 42 is formed in the via hole 34.
Is filled with metal by electrolytic plating to form a via 20 [FIG. 6 (c)]. As this metal, a solder can be used, and in particular, a Pb-Sn-based solder, an Ag-Sn-based solder, or a solder containing Bi, Sb, Zn, or the like based on the aforementioned solder or Sn is preferably used. it can. Further, after a thin metal layer such as copper is formed on the surface of the first insulating layer 14 including the surface of the via 20 by electroless plating, the metal layer 36 made of a metal such as copper having a desired thickness is formed by electrolytic plating. [FIG. 6
(D)]. In the resin forming the first insulating layer 14,
By blending 30% by volume or less of inorganic powder such as silicon oxide, a metal is easily deposited on the surface of the first insulating layer 14 and a thin film metal layer is easily formed by electroless plating.
Incidentally, the thin film metal layer may be formed by a sputtering method. When forming the thin film metal layer by such a sputtering method, forming the thin film metal layer with a metal such as titanium or palladium,
Adhesion with the first insulating layer 14 and the like can be improved.

On the formed metal layer 36, conductor patterns 16, 16,... Of a desired pattern are formed by a photolithography method or the like (step of FIG. 6E). This conductor pattern 16
Are formed substantially parallel to the metal foil 42. As shown in FIG. 2, a via 20 connected to the electrode terminal 12 of the semiconductor element 30 is formed at one end, and the other end is formed at the other end. Is formed with a land portion 24 connected to the external connection terminal 22. Further, as shown in FIG. 2, the conductor pattern 16 is formed by being bent in the left-right direction, and its length (L) preferably satisfies the above equation (3). Next, the conductor patterns 16, 16,.
Is covered with a second insulating layer 18, and external connection terminal recesses 38 in which the lands 24 shown in FIG. 2 form bottom surfaces are formed by laser or etching to complete the pattern forming body 40 (FIG. 6F). Process). The metal foil 42 may be formed after the formation of the conductor pattern 16 or the like, or after the formation of the second insulating layer
Or after forming the concave portion 38 for the external connection terminal.

The pattern forming body 40 obtained in the step shown in FIG. 6 is bonded to the wafer 30 as shown in FIG. At this time, by forming the adhesive layer 32 of the pattern forming body 40 with a thermoplastic adhesive, the metal foil 42
Immediately after peeling, the pattern forming body 40 is
0 can be bonded by heating. This is because the thermoplastic adhesive has a sufficient adhesive ability even after receiving a thermal history. Then, after the external connection terminals 22 such as solder balls are mounted in the external connection terminal concave portions 38, the wafer 30 is cut into predetermined pieces, for example, at the points indicated by the dashed-dotted line A shown in FIG. ,
The semiconductor device shown in FIG. 5 can be obtained. When the via 20 is formed by solder, the pattern forming body 4
When bonding the semiconductor chip 0 to the wafer 30, the via 20 may be melted and connected to the electrode terminal 12, and the external connection terminal 22 such as a solder ball may be attached by cutting the wafer 30 at a predetermined position. It may be performed after slicing.

In the semiconductor device shown in FIG.
Although 0 is formed of one type of metal, as shown in FIG. 8, it may be formed of two types of metal layers 20a and 20b. In this manner, by forming the vias 20 with the metal layers 20a and 20b, the vias 20 formed by the metal layer 20b made of, for example, solder and the metal layer 20a made of copper or gold can be formed. According to the via 20, the connection with the electrode terminal 12 or the conductor pattern 16 of the semiconductor element 10 can be improved, and copper or gold has lower electric resistance than solder, so that the electric characteristics are improved. be able to. When the metal layer 20a is formed by solder, the end face of the metal layer 20b may be exposed from the etching resist due to a displacement of the applied etching resist when the conductive pattern 16 is formed by the etching solution. As described above, when the exposed end face of the metal layer 20b comes into contact with the etching solution, the solder forming the metal layer 20b is simultaneously etched. For this reason, the metal layer 20b can be prevented from being etched by forming the metal layer 20a from a metal that is not easily etched by the etchant, for example, tin or nickel. Furthermore, when the via 20 is substantially formed of a metal such as copper or nickel, and the surface of the via 20 is plated with gold, the surface of the electrode terminal 12 is plated with tin, so that the via 20 and the electrode terminal 12 Can be joined by a eutectic alloy of gold and tin.
The joining by the eutectic alloy can be performed even when the surface of the via 20 is plated with tin and the surface of the electrode terminal 12 is plated with gold. The via 20 composed of the two types of metal layers can be formed by applying two types of metal plating in the step of FIG.

As described above, the semiconductor device shown in FIG. 5 or FIG. 8 is manufactured by bonding the pre-formed pattern forming body 40 to the wafer 30, but as shown in FIG. Via 2 having projecting portion 20c formed at the end
0 may be a semiconductor device in which the pattern forming body 40 having 0 is bonded to the semiconductor element 10 by the anisotropic conductive adhesive film 44. The anisotropic conductive adhesive film 44 is formed by mixing conductive particles in an adhesive layer, and the anisotropic conductive adhesive film 44 is pressed by the protrusion 20 c of the via 20. In the portion, the adhesive is extruded, and the conductive powder remains to obtain conductivity. Note that the conductive powder is insulated from the portion where no pressing force is applied by the adhesive, and the insulating property is maintained.

The pattern forming body 40 for forming the semiconductor device shown in FIG. 9 can be formed by the steps shown in FIG. The type and physical properties of the resin forming the first insulating layer 14 and the second insulating layer 18 in FIG. 9 or the shape and length of the conductor pattern 16 are the same as those in the semiconductor device shown in FIGS. Therefore, detailed description is omitted here. In the step shown in FIG. 10, first, the first insulating layer 14 is formed on a metal foil 42 such as copper.
After the formation of the two-layer structure film, the via holes 34 are formed in the first insulating layer 14 by laser or etching in the first insulating layer 14 and the adhesive layer 32 [FIG.
(Steps of (a) and (b))]. The bottom surface of the via hole 34 is formed by a metal foil 42. The via hole 34 is filled with metal by electrolytic plating using the metal foil 42 as one of the electrodes to form the via 20 (step of FIG. 10C). The electrolytic plating is continued until the protrusion 20 protruding from the first insulating layer 14 is formed at the tip of the via 20. As the metal forming the via 20, solder, copper, or nickel can be used as in the semiconductor device shown in FIG. When forming the via 20,
Two types of metal plating may be applied to form vias 20 made of two types of metal layers as shown in FIG.

Next, conductor patterns 16, 16,... Of a desired pattern are formed on the metal foil 42 by a photolithography method or the like (step of FIG. 10D). Each of the conductor patterns 16 is formed in the shape and length shown in FIG. Further, after the conductor patterns 16, 16,... Are covered with the second insulating layer 18, the external connection terminal concave portions 38 in which the lands 24 shown in FIG. Is completed [Fig. 10 (e).
Process).

The completed pattern forming body 40 is shown in FIG.
As shown in (a), the wafer 30 is pressed and pressed through the anisotropic conductive adhesive film 44. During this pressing,
At the portion of the anisotropic conductive adhesive film 44 to which the pressing force is applied by the projecting portion 20c of the via 20 and the electrode terminal 12 formed on the wafer 30, the adhesive is extruded and the conductive powder remains, Via 20 and electrode terminal 12 can be electrically connected. Then, the recess 38 for the external connection terminal is used.
After attaching external connection terminals 22 such as solder balls to the
The wafer 30 is cut at a predetermined position, for example, at a position indicated by a dashed-dotted line A in FIG. 11B to obtain a semiconductor device shown in FIG. The mounting of the external connection terminals 22 such as solder balls may be performed after the wafer 30 is cut at a predetermined position into individual pieces. In the method of manufacturing a semiconductor device described above, the semiconductor device is manufactured by forming the conductor pattern 16 and the like on the wafer 30 and then cutting the semiconductor device at a predetermined location. The conductor pattern 16 and the like may be formed on the semiconductor element 10 thus formed.

[0026]

The present invention will be described in more detail by way of examples. Example 1 A semiconductor device was manufactured by a method shown in FIG. 3 using a 6-inch wafer in which a plurality of semiconductor elements were built. The electrode terminals 12 formed on the wafer are obtained by forming a titanium layer and a copper layer on an aluminum electrode pad. After printing a silicone rubber precursor paste containing fine silicon oxide powder on the wafer to a thickness of about 60 μm, the wafer was cured at 150 ° C. for 2 hours in nitrogen to form a first insulating layer 14. . This first insulating layer 1
The Young's modulus at room temperature (25 ° C.) of the silicone rubber forming No. 4 was about 7 × 10 ⁶ Pa. Next, via holes 34 were formed in the first insulating layer 14 on the electrode terminals 12 by excimer laser. The copper layer of the electrode terminal 12 is exposed at the bottom of the via hole 34. A metal layer 36 made of copper was formed on the surface of the first insulating layer 14 including the bottom surface and the inner wall surface of the via hole 34 where the copper layer of the electrode terminal 12 was exposed. This metal layer 36 was formed to a thickness of about 15 μm by forming a thin metal layer made of copper by electroless plating and then performing electrolytic plating of copper.

Further, after a gold plating film having a desired pattern was formed on the surface of the metal layer 36 by electrolytic plating, the metal layer 36 was etched using the gold plating film as a mask to form the conductor pattern 16. As shown in FIG. 2, the formed entire conductor pattern 16 was formed by being bent in the left-right direction, and its length (L) satisfied the following equation (4).

(Equation 4)

Next, the conductor pattern 1 of the first insulating layer 14
On the surface (except for the end of the conductor pattern 16 on which the external connection terminal 22 is mounted) 6 is formed, a silicone rubber precursor paste containing fine silicon oxide powder is printed to a thickness of about 30 μm by screen printing. And then in nitrogen
The second insulating layer 18 was formed by performing curing at 80 ° C. for 2 hours. The Young's modulus at room temperature (25 ° C.) of the silicone rubber forming the second insulating layer 18 was about 7 × 10 ⁶ Pa. Thereafter, the wafer 30 is diced to about 7 mm ×
After the individual pieces of 12 mm are formed, the second insulating layer 18
The external connection terminal 2 is connected to the end of the conductor pattern 16 exposed from the
The semiconductor device shown in FIG. 1 was obtained by mounting the solder ball as No. 2. The mounting of the solder ball is performed by the conductor pattern 1 exposing the solder ball having the eutectic composition from the second insulating layer 18.
After placing on the end of No. 6, reflow was performed at 230 ° C.

Example 2 In Example 1, a two-layer film in which a 50 μm-thick silicone rubber layer was formed on a polyimide film in which a thermoplastic polyimide resin as a thermoplastic adhesive was formed to a thickness of 35 μm. The semiconductor device shown in FIG. 4 was manufactured in the same manner as in Example 1 except that the first insulating layer 14 was formed on the wafer 30 via a thermoplastic polyimide resin by pressure and heat bonding on the wafer 30. did.

Example 3 As the first insulating layer 14, a silicone rubber layer having a Young's modulus of about 4 × 10 ⁶ Pa at room temperature (25 ° C.) and a thickness of 50 μm and a copper foil having a thickness of 12 μm were thermoplastically bonded. Using a three-layer structure film in which a thermoplastic polyimide resin as an agent is adhered via a polyimide film formed to a thickness of 35 μm, and forming a titanium layer of about 500 μm on the surface of the silicone rubber layer by sputtering, An excimer laser was irradiated from above the titanium layer to form a via hole 34 (FIG. 6) having a bottom surface made of copper foil. Next, Sn-P by electrolytic plating using copper foil as one of the electrodes
b After filling the via hole 34 with the eutectic solder metal to form the via 20, a copper layer of about 5 μm is formed by electroless plating on the surface of the silicone rubber layer including the surface of the via 20; Copper layer thickness of 5 by electrolytic plating
μm. After a mask having a desired pattern was formed on the surface of the copper layer, a copper layer having a thickness of about 10 μm was subjected to pattern plating by electrolytic plating, and a gold layer having a thickness of about 2 μm was further subjected to pattern plating. Thereafter, the mask is removed to remove the copper layer where the gold layer is not pattern-plated to form the conductor pattern 16, and the copper foil is removed to remove the polyimide made of a thermoplastic polyimide resin as a thermoplastic adhesive. Expose the film.

As shown in FIG. 2, each of the conductor patterns 16 is formed by being bent in the left-right direction, and its length (L) satisfies the above-described equation (4).
Further, the surface on which the conductor pattern 16 is formed (excluding the end of the conductor pattern 16 on which the external connection terminal 22 is mounted) is made of a silicone rubber composition and has a Young's modulus at room temperature (25 ° C.) of about 4 × 10 ⁶ Pa. Is formed as the second insulating layer 18 to obtain the pattern forming body 40. The pattern forming body 40 can be bonded to the wafer 30 by pressurizing and heating the obtained pattern forming body 40 onto the wafer 30 via a thermoplastic polyimide resin. Thereafter, the wafer 30 is diced to about 7
After the individual pieces of mm × 12 mm were formed, solder balls as external connection terminals 22 were attached to the ends of the conductor patterns 16 exposed from the second insulating layer 18 in the individual pieces to obtain the semiconductor device shown in FIG. The mounting of the solder ball was performed by placing a solder ball having a eutectic composition on the end of the conductor pattern 16 exposed from the second insulating layer 18 and then performing reflow at 230 ° C.

Example 4 In Example 3, as in Example 3, except that the via holes 34 were filled with metal plating by metal plating instead of solder plating. The following semiconductor device was obtained.

Example 5 A silicone rubber layer having a Young's modulus at room temperature (25 ° C.) of about 4 × 10 ⁶ Pa and a thickness of about 60 μm was formed as a first insulating layer 14 on a copper foil having a thickness of 18 μm. Using a two-layer structure film, a via hole 34 having a copper foil as a bottom surface was formed by excimer laser. Electroplating is performed using this copper foil as one of the electrodes, so that the copper filled in the via holes 34 projects from the surface of the silicone rubber layer.
A via 20 having c is formed. Next, after a gold pattern of a desired pattern is formed on the copper foil by gold plating, the copper foil is removed by etching to form a conductor pattern 16. As shown in FIG. 2, each of the conductor patterns 16 is formed by being bent in the left-right direction, and the length (L) satisfies the equation (4). Further, the surface on which the conductor pattern 16 is formed (external connection terminal 2)
And room temperature excluding) the end of the conductor pattern 16 for mounting the 2 consists silicone rubber (Young's modulus at 25 ° C.) to form a solder resist layer is about 4 × 10 ⁶ Pa as the second insulating layer 18 Thus, the pattern forming body 40 can be obtained.

The obtained pattern forming body 40 is pressed against the wafer 30 via an anisotropic conductive adhesive film in which conductive powder and granules are mixed in an adhesive layer, and pressed to form a via 2.
0 and each of the electrode terminals 12 provided on the wafer 30 are electrically connected. Thereafter, the wafer 30 is diced into individual pieces of about 7 mm × 12 mm, and solder balls as external connection terminals 22 are attached to the ends of the conductor patterns 16 exposed from the second insulating layer 18 in the individual pieces. 5
Was obtained. The mounting of this solder ball
This was performed by placing a eutectic solder ball on the end of the conductor pattern 16 exposed from the second insulating layer 18 and then performing reflow at 230 ° C.

Example 6 Each of the semiconductor devices obtained in Examples 1 to 5 was mounted on a mounting board and subjected to a temperature cycle test at -65 to + 126 ° C. No problems occurred.

[0036]

According to the present invention, a semiconductor device which can sufficiently absorb a stress applied to a conductor pattern due to a temperature change and is hardly restricted by a manufacturing apparatus or the like, in particular, a semiconductor device having substantially the same size as a semiconductor element can be obtained. Can be manufactured with good productivity.

[Brief description of the drawings]

FIG. 1 is a partial cross-sectional view illustrating an example of a semiconductor device according to the present invention.

FIG. 2 is an explanatory diagram illustrating a shape of a conductor pattern of the semiconductor device shown in FIG.

FIG. 3 is a process chart illustrating a method for manufacturing the semiconductor device shown in FIG.

FIG. 4 is a partial cross-sectional view illustrating another example of the semiconductor device according to the present invention.

FIG. 5 is a partial cross-sectional view illustrating another example of the semiconductor device according to the present invention.

FIG. 6 is a process diagram illustrating a first-stage portion of the method for manufacturing the semiconductor device illustrated in FIG. 5;

FIG. 7 is a process chart for explaining the latter part of the method for manufacturing the semiconductor device shown in FIG.

FIG. 8 is a partial cross-sectional view illustrating another example of the semiconductor device according to the present invention.

FIG. 9 is a partial cross-sectional view illustrating another example of the semiconductor device according to the present invention.

FIG. 10 is a process diagram illustrating a first-stage portion of the method for manufacturing the semiconductor device illustrated in FIG. 9;

FIG. 11 is a process diagram illustrating a latter part of the method of manufacturing the semiconductor device shown in FIG. 9;

FIG. 12 is a front view illustrating a conventional semiconductor device.

FIG. 13 is a partial cross-sectional view illustrating a conventional semiconductor device.

[Explanation of symbols]

 DESCRIPTION OF SYMBOLS 10 Semiconductor element 12 Electrode terminal 14 1st insulating layer 16 Conductor pattern 18 2nd insulating layer 20 Via 22 External connection terminal 24 Land part of conductor pattern 16 26 Horizontal part of conductor pattern 16 30 Wafer 34 Via hole 38 External connection terminal Recess 40 pattern forming body

[Procedure amendment]

[Submission date] December 18, 1997

[Procedure amendment 1]

[Document name to be amended] Statement

[Correction target item name] Claim 14

[Correction method] Change

[Correction contents]

(Equation 2)

Claims (14)

[Claims] 1. A conductive pattern is formed between a first insulating layer and a second insulating layer provided on one surface of a semiconductor element on which an electrode terminal is formed, and one end of the conductive pattern is formed. The other end of the conductor pattern is electrically connected to an external connection terminal provided through the second insulating layer, while being electrically connected to the electrode terminal via a via penetrating the first insulating layer. A semiconductor device comprising: a first insulating layer and a second insulating layer, wherein each of the first insulating layer and the second insulating layer expands and contracts in a layer direction due to a temperature change of the first insulating layer and the second insulating layer; So that the conductor pattern can expand and contract in the layer direction,
The first conductive pattern is formed by an elastic body having a Young's modulus of 10 ⁸ Pa or less at room temperature, and each of the conductive patterns is longer than a linear distance between the via and an external connection terminal.
A semiconductor device formed to be bent over an insulating layer. 2. The semiconductor device according to claim 1, wherein the first insulating layer and the mounting substrate have a length that is equal to or less than a length of the conductive pattern when a temperature change is applied to the semiconductor device mounted on the mounting substrate. 2. The semiconductor device according to claim 1, wherein the length (L) is a length satisfying the following equation (1). (Equation 1) 3. The semiconductor device according to claim 1, wherein the first insulating layer is bonded to one surface of the semiconductor element on which the electrode is formed via an adhesive layer. 4. The semiconductor device according to claim 1, wherein the via penetrating the first insulating layer is formed of a plating metal. 5. The semiconductor device according to claim 4, wherein at least two metal layers forming the via are formed of different kinds of metals. 6. An electrode terminal side end of a via penetrating the first insulating layer is formed at a protruding portion protruding from the surface of the first insulating layer, and the via protruding portion and an electrode terminal of the semiconductor element are formed. The semiconductor device according to any one of claims 1 to 4, wherein the semiconductor device is electrically connected via an anisotropic conductive adhesive film formed by mixing conductive particles in an adhesive layer. 7. A conductor pattern is formed between a first insulating layer and a second insulating layer provided on one surface of the semiconductor element on which an electrode terminal is formed, and one end of the conductor pattern is formed. The other end of the conductor pattern is electrically connected to an external connection terminal provided through the second insulating layer, while being electrically connected to the electrode terminal via a via penetrating the first insulating layer. When manufacturing the semiconductor device connected, one end of the conductor pattern is connected to a via penetrating the first insulating layer, and the other end of the conductor pattern penetrates the second insulating layer. Forming a pattern formed body with the formed concave portion for the external connection terminal exposed, and then laminating the pattern formed body on one surface side on which the electrode terminals of the semiconductor element are formed; Electrode terminal of semiconductor element The method of manufacturing a semiconductor device characterized by connecting each of electrically. 8. The method according to claim 7, further comprising: joining the electrode terminals of the wafer on which the plurality of semiconductor elements are formed to the vias of the pattern forming body, and cutting the wafer for each semiconductor element.
The manufacturing method of the semiconductor device described in the above. 9. The method of manufacturing a semiconductor device according to claim 7, wherein the pattern forming body and the wafer are bonded via an adhesive layer formed on the via forming surface side of the pattern forming body. 10. The method of manufacturing a semiconductor device according to claim 7, wherein the via penetrating through the first insulating layer is formed of a plating metal. 11. The method of manufacturing a semiconductor device according to claim 10, wherein at least two metal layers forming the via are formed of different kinds of metals. 12. An end portion of the via penetrating the first insulating layer on the electrode terminal side is formed in a protruding portion, and the protruding portion and the electrode terminal of the semiconductor element are connected by a conductive powder material in the adhesive layer. The method for manufacturing a semiconductor device according to claim 7, wherein the semiconductor device is electrically connected via an anisotropic conductive adhesive film formed. 13. Each of the first insulating layer and the second insulating layer,
The first insulating layer and the second insulating layer are formed of an elastic body having a Young's modulus of 10 ⁸ Pa or less so that the conductor pattern can expand and contract in the layer direction in accordance with expansion and contraction in the layer direction due to a temperature change of the first insulating layer. The semiconductor according to any one of claims 7 to 12, wherein each of the conductive patterns is formed by bending the first insulating layer so as to be longer than a linear distance between the via and the external connection terminal. Device manufacturing method. 14. When a temperature change is applied to a semiconductor device mounted on a mounting substrate, a length (L) of the conductor pattern is set so as to absorb expansion and contraction of each of the first insulating layer and the mounting substrate in a layer direction. 14. The method for manufacturing a semiconductor device according to claim 7, wherein the length satisfies the following expression (2). (Equation 2)