JPH11126371A - 相変化型光ディスク - Google Patents

相変化型光ディスク

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Publication number
JPH11126371A
JPH11126371A JP10228823A JP22882398A JPH11126371A JP H11126371 A JPH11126371 A JP H11126371A JP 10228823 A JP10228823 A JP 10228823A JP 22882398 A JP22882398 A JP 22882398A JP H11126371 A JPH11126371 A JP H11126371A
Authority
JP
Japan
Prior art keywords
layer
recording
thermal
optical disk
recording layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP10228823A
Other languages
English (en)
Inventor
Hii Jon Te
テ・ヒー・ジョン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LG Electronics Inc
Original Assignee
LG Electronics Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LG Electronics Inc filed Critical LG Electronics Inc
Publication of JPH11126371A publication Critical patent/JPH11126371A/ja
Pending legal-status Critical Current

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11B—INFORMATION STORAGE BASED ON RELATIVE MOVEMENT BETWEEN RECORD CARRIER AND TRANSDUCER
    • G11B7/00—Recording or reproducing by optical means, e.g. recording using a thermal beam of optical radiation by modifying optical properties or the physical structure, reproducing using an optical beam at lower power by sensing optical properties; Record carriers therefor
    • G11B7/24—Record carriers characterised by shape, structure or physical properties, or by the selection of the material
    • G11B7/241—Record carriers characterised by shape, structure or physical properties, or by the selection of the material characterised by the selection of the material
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
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    • G11B7/2403—Layers; Shape, structure or physical properties thereof
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  • Optical Record Carriers And Manufacture Thereof (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)

Abstract

(57)【要約】 【課題】 本発明はセルフシャープニング効果を少なく
することと併せてパルス幅変調方式により駆動されるの
に適した相変化型光ディスクを提供する。 【解決手段】 相変化型光ディスクでは記録層の表面に
形成された誘電体層と熱流動調節層が積層される。熱流
動調節層は熱伝導率が高い物質と熱伝導率が低い物質を
含むように形成されている。

Description

【発明の詳細な説明】
【０００１】
【発明が属する技術分野】本発明は相変化型光ディスク
に関するもので、特にセルフシャープニング効果（Self
Sharpenig Effect、ＳＳＥ）を弱化させるのに適合し
た相変化型光ディスクに関するものである。
【０００２】
【従来の技術】現在市販されている光記録媒体としては
再生専用コンパクトディスク（ＣＤ）、追記型コンパク
トディスク（ＣＤ−Ｒ）、書換可能型コンパクトディス
ク（ＣＤ−ＲＷ）、光磁気ディスク（ＭＯＤ）、ＰＤ
（Pulse Change Duel Disc；ＰＤ）、ＤＶＤ−ＲＡＭ等
がある。これらの中ＰＤ、ＣＤ−ＲＷ及びＤＶＤ−ＲＡ
Ｍのようなディスクは相変化特性を利用して情報を反復
的に記録する。相変化型光ディスクは、結合構造が比較
的に大きいエネルギーの光ビームにより非晶質状態また
は結晶状態に変化させられて情報が記録または消去され
る。
【０００３】この相変化型光ディスクは、図１に図示す
ように、ポリカーボネイト基板（２）の上にＺｎＳ−Ｓ
ｉＯ2 で形成された第１誘電体層（４）、ＧｅＳｂ−Ｓ
ｂ2Ｔｅ3で形成された記録層（６）、ＺｎＳ−ＳｉＯ2
で形成された第２誘電体層（８）、ＡｌまたはＡｕのよ
うな金属物質からなる反射層（１０）及び紫外線硬化樹
脂からなる保護膜（１２）を順次積層させている。この
ように４層膜構造で形成された相変化型ディスクは、記
録層（６）が光ビームにより結晶状態と非晶質状態へ可
逆的に変化させられることによって情報を記録または消
去する。ここで、非晶質状態は″１″の論理値を有する
記録ビットを意味し、結晶状態は″０″の論理値を現す
記録ビットまたは情報が記録されていない非記録状態を
現す。この非晶質状態は記録層が融点より高い温度に加
熱されてから急速に冷却されることにより形成される。
また、非晶質状態から結晶状態への変化、則ち消去は記
録層の結晶化の温度よりは高い温度に記録層が加熱され
ることで行われる。さらに、結晶状態が非晶質状態に比
べて光反射度が大きいので光ディスクに記録された情報
を再生することができる。
【０００４】相変化型光ディスクにアクセスする方式と
してはマークの位置に依存するパルス位置変調（ＰＰ
Ｍ）方式とマークの幅に依存するパルス幅変調（ＰＷ
Ｍ）方式が使用されている。これらの中ＰＰＭ方式はＰ
Ｄにだけに使用され、情報の記録密度が少なくなるとい
う短所を有している。一方、ＣＤ−ＲＷやＤＶＤ−ＲＡ
Ｍ等の記録媒体に利用されているＰＷＭ方式は情報の記
録密度を向上させることができる長所を有する。
【０００５】いずれにしても、相変化型ディスクに情報
を記録するためには図２Ａに示すような記録パルス（Ｗ
Ｐ）形態で所定の記録パワーを持つ光ビームを相変化型
ディスクに照射する。記録パワーを持つビームが照射さ
れた記録層の領域が溶融され、その後に冷却されること
で図２Ｂのような非晶質状態の新しいマーク（ＮＭＫ）
が記録される。これと併せて、新しいマークの周辺では
常に結晶状態の結晶粒リング（ＣＲ）が表れる。この結
晶粒リング（ＣＲ）は、記録パワーの光ビームの照射さ
れた領域の周辺が結晶温度と溶融温度の間の温度まで加
熱され、結晶状態に変化することで形成される。例え
ば、開口数が０.５ で、波長が８２５nmの光ビームが相
変化型ディスクに照射されると０.３μmの幅を持つ結晶
粒リングがマーク周辺に生じる。このようにして形成さ
れた結晶粒リング（ＣＲ）は新しいマーク（ＮＭＫ）と
以前のマーク（ＰＭＫ）との境界部を明確に区分するこ
とで新しいマーク（ＮＭＫ）のエッジ情報が以前のマー
クによる残留信号の影響を受けないようにしている。こ
のように記録マークの周辺に結晶粒リングを形成するセ
ルフシャープニング効果（ＳＳＥ）はＰＰＭ方式により
再生された情報に有利に作用する。
【０００６】
【発明が解決しようとする課題】一方、結晶粒リング
（ＣＲ）の幅はマークの大きさが大きくなるにつれて広
くなる。これは相変化型光ディスクは、記録層（６）の
温度が緩慢に上昇及び下降することとともに、温度を比
較的低くさせる構造であること起因する。このようにマ
ークの大きさに従って幅が広くなる結晶粒リング（Ｃ
Ｒ）はＰＷＭ方式により再生する再生信号の特性を弱化
させる。したがって、ＰＷＥ方式の場合は、ＳＳＥを少
なくする必要がある。従って、本発明の目的はセルフシ
ャープニング効果を低下させることができる相変化型光
ディスクを提供することである。本発明の他の目的はパ
ルス幅変調方式により駆動されるのに適した相変化型光
ディスクを提供することである。
【０００７】
【課題を解決するための手段】本発明による相変化型光
ディスクは、記録層と、記録層の一面に形成された誘電
体層と、誘電体層の表面に熱伝導率が高い物質と熱伝導
率が低い物質を含むように形成された熱流動調整層とを
具備することを特徴とする。
【０００８】
【作用】前記構成によって、本発明による相変化型光デ
ィスクでは熱流動調整層により記録層での熱流動が調節
されることで熱応答特性が向上されるのでＳＳＥにより
生成される結晶粒リングの幅が著しく狭くなる。これに
より、ＰＷＭ方式により本発明による相変化型光ディス
クから再生された再生信号の特徴が向上する。
【０００９】
【発明の実施の形態】図３は本発明の実施形態による相
変化型光ディスクの構造を概略的に図示する図面であ
る。図３において、本発明の実施形態による相変化型光
ディスクは透明基板（２２）の上に第１誘電体層（２
４）を形成している。透明基板（２２）はポリカーボネ
イトで厚さ０.６mmまたは１.２mmに形成される。第１誘
電体層（２４）は所定の圧力下で所定の電力を利用する
直流または高周波マグネトロンスパッタリング方法によ
りアルゴン（Ａｒ）が含まれるＺｎＳ−ＳｉＯ2 のよう
な不活性気体イオンを透明基板（２２）の表面に堆積さ
せることで１００乃至３００nmの厚さとなるように形成
される。
【００１０】本相変化型光ディスクは第１誘電体（２
４）の上に記録層（２６）と第２誘電体（２８）が順次
積層される。記録層（２６）は、直流または高周波マグ
ネトロンスパッタリング方法によりアルゴン（Ａｒ）が
含まれたＧｅＳｂ−Ｓｂ2Ｔｅ3の不活性気体イオンが第
１誘電体層（２４）の表面に堆積され、１０乃至３０nm
の厚さに形成される。第２誘電体層（２８）は第１誘電
体（２４）の形成方法と同一の方法で同一の不活性気体
イオンが記録層（２６）の表面に１０乃至３０nmの厚さ
に形成される。ここで、第１及び第２誘電体層（２４、
２８）はＺｎＳ−ＳｉＯ2 以外にＳｉＯ2（ＺｒxＣｅ
1ーx）yＯ1ーy、ＡｌＮまたはＡｌ2Ｏ3 等によっても形成
することができる。この第１及び第２誘電体層（２４、
２８）は、記録層（２６）が加熱された場合に記録層か
ら熱を吸収して記録層（２６）が急速に冷却されるよう
にする。一方、記録層（２６）は情報の記録時大きいエ
ネルギーの光ビームにより自分の融点より高い温度に加
熱された後、第１及び第２誘電体層（２４、２８）によ
り急速に冷却されることで結晶状態から非晶質状態に変
化する。また、記録層（２６）は、再生時の光ビームエ
ネルギーよりは大きいが記録時の光ビームのエネルギー
よりは小さいエネルギーの光ビームにより、融点よりは
低くて結晶化温度よりは高い温度で加熱されて第１及び
第２誘電体層（２４、２８）により急速に冷却されるこ
とで非晶質状態から結晶状態に変化する。こうした記録
層（２６）はＧｅＳｂ−Ｓｂ2Ｔｅ3の他に少量のＡｇ、
Ｓｃ、ＩｎまたはＣｏなどを追加的に含むことができ
る。これと異なりＡｇ−Ｉｎ−Ｓｂ−Ｔｅ系の物質でも
形成できる。
【００１１】また、上記した第２誘電体層（２８）の上
に反射膜（３０）、熱補償層（３２）、熱応答促進層
（３４）及び保護膜（３６）を順次積層させてある８。
反射層（３０）は熱が第２誘電体層（２８）と熱補償層
（３２）の間で自由に伝達されるとともに反射度を満足
させるように最小の厚さとしなければならない。そのた
め、反射膜（３０）は、上記マグネトロンスパッタリン
グ方法によりアルゴン（Ａｒ）が含まれたＡｕまたはＡ
ｌの気体イオンを第２誘電体層（２８）の表面に２０乃
至５０nmの厚さに堆積して形成する。この反射膜（３
０）はＡｕまたはＡｌ以外にＴｉ、ＣｏまたはＣｒ等が
追加的に含まれることもある。
【００１２】熱補償層（３２）は、熱応答促進層（３
４）の温度が急激に上昇及び下降する場合に、記録層
（２６）と熱応答促進層（３４）間の伝導熱を緩衝さ
せ、記録層（２６）の温度を補償するためのものであ
る。この熱補償層は。マグネトロンスパッタリング方法
によりアルゴン（Ａｒ）が含まれるとともに比較的熱伝
導率が低いＺｎＳ−ＳｉＯ2 のような不活性気体イオン
などを反射層（３０）の表面に２０乃至５０nmの厚さに
堆積させて形成する。また、この熱補償層（３２）はＺ
ｎＳ−ＳｉＯ2の以外にＳｉ、ＳｉＮ、ＳｉＯ2などが含
まれることがある。この熱補償層（３２）は記録層（２
６）に情報を記録するため記録層（２６）に照射される
光ビームの記録パワーの感度を高める役を果たす。この
熱補償層（３２）がない場合、熱応答促進層（３４）に
より熱が早く抜けてしまうので、記録層（２６）の温度
を上げる光ビームのパワーを大きくしなければならな
い。この熱補償層（３２）を利用することで、従来の４
層構造の光ディスクに照射される光の記録パワーでも記
録層（２６）の温度を記録温度（すなわちち、溶融温
度）まで充分に高くすることができる。
【００１３】熱応答促進層（３４）は、記録時すなわち
光ビームが照射される場合に記録層（２６）の温度を急
激に上昇すると同時に、記録層（２６）の温度を急激に
下降させる。このために、熱応答促進層（３４）は熱伝
導率がよいＡｌ、Ａｕ等により十分な厚さを持つように
形成される。この熱応答促進層（３４）は、熱補償層
（３２）の形成方法と同じ方法で、熱伝導性のあるＡ
ｌ、Ａｕ等の不活性気体イオン等を熱補償層（３２）の
表面に５０乃至１００nmの厚さに堆積させることで形成
される。このように形成された熱応答促進層（３４）は
記録層（２６）のトラック方向での温度変化を示す。結
果的に、熱応答促進層（３４）と熱補償層（３２）は記
録層（２６）で熱の流れを調節する熱流動調節層を構成
している。この熱流動調節層は記録層（２６）の温度を
図４の曲線（ＰＩＣ）のように急激に上昇及び下降させ
ると同時に温度を従来のものよりわずかに高くする。図
中曲線ＰＩＣが本実施形態の温度特性を示し、ＰＡＣが
従来のものを示している。保護層（３６）は紫外線硬化
樹脂を熱応答促進層（３４）の上に塗布することで形成
される。
【００１４】このように、熱伝導率が低い熱補償層（３
２）と熱伝導率が高い熱応答促進層（３４）が追加され
た６層膜構造の相変化型光ディスクは、光ビームが照射
される領域の温度が急激に上昇し、かつ急激に下降する
ことでその周辺に形成される結晶粒リングの幅がより狭
くなる。これに従って、ＰＷＭ方式により本発明の実施
形態の相変化型光ディスクから再生された再生信号はＳ
ＳＥによる影響が少なくなる。この効果等は図５によっ
て明らかになる。
【００１５】図５Ａは相変化型光ディスクに照射される
光ビームの記録パワーによるＣＮＲ（Carry to Noise R
atio）を表す。図５Ａで、曲線（ＰＩＣ）は本発明の実
施形態の相変化型光ディスクに対するＣＮＲの変化を表
し、曲線（ＰＡＣ）は従来の相変化型光ディスクに対す
るＣＮＲの変化を表す。図５Ａでの２曲線（ＰＩＣ、Ｐ
ＡＣ）を通して、本発明の実施形態の相変化型光ディス
クが向上されたＣＮＲを有するということが分かる。図
５Ｂでは相変化型光ディスクに照射される光ビームの記
録パワーによるジッタ量の変化が説明されている。図５
Ｂで、曲線（ＰＩＣ）は本発明の実施形態による相変化
型光ディスクに対するジッタ量の変化を示し、曲線（Ｐ
ＡＣ）は従来の相変化型光ディスクに対するジッタ量の
変化を表す。図５Ｂでの二曲線（ＰＩＣ、ＰＡＣ）を通
して、本発明の実施形態に伴う相変化型光ディスクのジ
ッタ量が従来の相変化型光ディスク量に比べ著しく小さ
くなるということが分かる。
【００１６】
【発明の効果】前述したように、本発明による相変化型
光ディスクでは熱流動調整層により記録層での熱流動が
調節され、熱応答特性が向上されるとともにＳＳＥによ
り生成される結晶粒リングの幅が著しく狭くなる。これ
に従って、ＰＷＮ方式により本発明による相変化型光デ
ィスクから再生された再生信号の特性が向上される。以
上説明した内容を通して当業者なら本発明の技術思想を
一脱しない範囲で多様な変更及び修正が可能であるとい
うことが分かるであろう。従って、本発明の技術的範囲
は明細書の詳細な説明に記載された内容に限定されるこ
となく特許請求の範囲により定められるべきである。
【図面の簡単な説明】
【図１】 従来の相変化型光ディスクの構造を示す断面
図である。
【図２】 記録時相変化型光ディスクに印加される光ビ
ーム形態を示す図（Ａ）と相変化型光ディスクで表れる
ＳＳＥを説明する図（Ｂ）と図１での相変化型光ディス
クの記録層の温度特性を説明する図（Ｃ）である。
【図３】 本発明の実施形態による相変化型光ディスク
の構造を図示する断面図である。
【図４】 相変化型光ディスクに含まれた記録層のトラ
ック方向での断面図である。
【図５】 相変化型光ディスクの記録パワーによるＣＮ
Ｒ特性を現す図（Ａ）と相変化型光ディスクの記録パワ
ーによるジッタ量の変化を表す図（Ｂ）である。
【符号の説明】
２、２２：基板 ４、２４：第１誘電体
層 ６、２６：記録層 ８、２８：第２誘電体
層 １０、３０：反射層 １２、３６：保護膜 ３２：熱補償層 ３４：熱応答促進層

Claims (5)

    【特許請求の範囲】
  1. 【請求項１】 記録層と、その記録層の表面に形成され
    た誘電体層と、その誘電体層の表面に熱伝導率が高い物
    質と熱伝導率が低い物質とからなる熱流動調整層とを具
    備することを特徴とする相変化型光ディスク。
  2. 【請求項２】 前記熱流動層は、熱伝導率が高い熱応答
    促進層と熱伝導率が低い熱報償層とからなることを特徴
    とする請求項１記載の相変化型光ディスク。
  3. 【請求項３】 前記熱応答促進層が前記熱補償層の上に
    形成されたことを特徴とする請求項２記載の相変化型光
    ディスク。
  4. 【請求項４】 前記熱補償層がＺｎＳ−ＳｉＯ2 、Ｓ
    ｉ、ＳｉＮ、ＳｉＯ2のいずれか一つで形成されたこと
    を特徴とする請求項３記載の相変化型光ディスク。
  5. 【請求項５】 前記熱応答促進層がＡｌとＡｕのうちい
    ずれ一つで形成されたことを特徴とする請求項３記載の
    相変化型光ディスク。
JP10228823A 1997-08-14 1998-08-13 相変化型光ディスク Pending JPH11126371A (ja)

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KR39022/1997 1997-08-14

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JPH11126371A true JPH11126371A (ja) 1999-05-11

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