JPH11124671A - ガイドブッシュ内周面への被膜形成方法 - Google Patents
ガイドブッシュ内周面への被膜形成方法Info
- Publication number
- JPH11124671A JPH11124671A JP28322397A JP28322397A JPH11124671A JP H11124671 A JPH11124671 A JP H11124671A JP 28322397 A JP28322397 A JP 28322397A JP 28322397 A JP28322397 A JP 28322397A JP H11124671 A JPH11124671 A JP H11124671A
- Authority
- JP
- Japan
- Prior art keywords
- guide bush
- auxiliary electrode
- vacuum chamber
- peripheral surface
- inner peripheral
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000000576 coating method Methods 0.000 title claims abstract description 99
- 239000011248 coating agent Substances 0.000 title claims abstract description 98
- 230000015572 biosynthetic process Effects 0.000 title claims description 10
- 229910021385 hard carbon Inorganic materials 0.000 claims abstract description 283
- 239000000463 material Substances 0.000 claims abstract description 78
- 230000002093 peripheral effect Effects 0.000 claims description 598
- 238000000034 method Methods 0.000 claims description 393
- 229910052710 silicon Inorganic materials 0.000 claims description 79
- 239000010703 silicon Substances 0.000 claims description 79
- 229910052799 carbon Inorganic materials 0.000 claims description 71
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 70
- 238000005520 cutting process Methods 0.000 claims description 58
- 229910052732 germanium Inorganic materials 0.000 claims description 56
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 claims description 56
- 230000000149 penetrating effect Effects 0.000 claims description 55
- 238000010438 heat treatment Methods 0.000 claims description 25
- 238000001704 evaporation Methods 0.000 claims description 22
- 230000008020 evaporation Effects 0.000 claims description 18
- 238000009826 distribution Methods 0.000 abstract description 49
- 238000004544 sputter deposition Methods 0.000 abstract description 16
- 239000007789 gas Substances 0.000 description 225
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 58
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 29
- 239000010936 titanium Substances 0.000 description 29
- 229910052719 titanium Inorganic materials 0.000 description 29
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 23
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 21
- 230000008569 process Effects 0.000 description 20
- 230000002159 abnormal effect Effects 0.000 description 19
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 12
- 230000008859 change Effects 0.000 description 12
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 10
- 230000000694 effects Effects 0.000 description 7
- 230000010355 oscillation Effects 0.000 description 6
- 229910052786 argon Inorganic materials 0.000 description 5
- 210000000078 claw Anatomy 0.000 description 4
- 229910000676 Si alloy Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052782 aluminium Inorganic materials 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- PZPGRFITIJYNEJ-UHFFFAOYSA-N disilane Chemical compound [SiH3][SiH3] PZPGRFITIJYNEJ-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 3
- 238000003825 pressing Methods 0.000 description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 description 2
- VGGSQFUCUMXWEO-UHFFFAOYSA-N Ethene Chemical compound C=C VGGSQFUCUMXWEO-UHFFFAOYSA-N 0.000 description 2
- 239000005977 Ethylene Substances 0.000 description 2
- 229910000927 Ge alloy Inorganic materials 0.000 description 2
- 229910052804 chromium Inorganic materials 0.000 description 2
- 239000011651 chromium Substances 0.000 description 2
- 239000007888 film coating Substances 0.000 description 2
- 238000009501 film coating Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 150000003377 silicon compounds Chemical class 0.000 description 2
- 229910021483 silicon-carbon alloy Inorganic materials 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 229910001315 Tool steel Inorganic materials 0.000 description 1
- UGACIEPFGXRWCH-UHFFFAOYSA-N [Si].[Ti] Chemical compound [Si].[Ti] UGACIEPFGXRWCH-UHFFFAOYSA-N 0.000 description 1
- 238000005299 abrasion Methods 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- CSDREXVUYHZDNP-UHFFFAOYSA-N alumanylidynesilicon Chemical compound [Al].[Si] CSDREXVUYHZDNP-UHFFFAOYSA-N 0.000 description 1
- 239000011230 binding agent Substances 0.000 description 1
- 238000005219 brazing Methods 0.000 description 1
- -1 carbon ions Chemical class 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- WADNUIHBLWBJQY-UHFFFAOYSA-N chromium germanium Chemical compound [Cr].[Ge] WADNUIHBLWBJQY-UHFFFAOYSA-N 0.000 description 1
- DYRBFMPPJATHRF-UHFFFAOYSA-N chromium silicon Chemical compound [Si].[Cr] DYRBFMPPJATHRF-UHFFFAOYSA-N 0.000 description 1
- 239000010941 cobalt Substances 0.000 description 1
- 229910017052 cobalt Inorganic materials 0.000 description 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 229910003460 diamond Inorganic materials 0.000 description 1
- 239000010432 diamond Substances 0.000 description 1
- 238000010292 electrical insulation Methods 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- ZPPUVHMHXRANPA-UHFFFAOYSA-N germanium titanium Chemical compound [Ti].[Ge] ZPPUVHMHXRANPA-UHFFFAOYSA-N 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 238000007733 ion plating Methods 0.000 description 1
- 230000009191 jumping Effects 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 238000003754 machining Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000010791 quenching Methods 0.000 description 1
- 230000000171 quenching effect Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 238000005496 tempering Methods 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000001771 vacuum deposition Methods 0.000 description 1
Landscapes
- Turning (AREA)
- Chemical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28322397A JPH11124671A (ja) | 1997-10-16 | 1997-10-16 | ガイドブッシュ内周面への被膜形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP28322397A JPH11124671A (ja) | 1997-10-16 | 1997-10-16 | ガイドブッシュ内周面への被膜形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH11124671A true JPH11124671A (ja) | 1999-05-11 |
| JPH11124671A5 JPH11124671A5 (enExample) | 2005-06-23 |
Family
ID=17662695
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP28322397A Pending JPH11124671A (ja) | 1997-10-16 | 1997-10-16 | ガイドブッシュ内周面への被膜形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH11124671A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000226658A (ja) * | 1999-02-02 | 2000-08-15 | Mitsubishi Chemicals Corp | Ｃｖｄ装置および磁気記録媒体の製造方法 |
| JP2010082702A (ja) * | 2008-09-29 | 2010-04-15 | Tsugami Corp | ガイドブッシュ |
| JP2010082701A (ja) * | 2008-09-29 | 2010-04-15 | Tsugami Corp | コレットチャック |
-
1997
- 1997-10-16 JP JP28322397A patent/JPH11124671A/ja active Pending
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2000226658A (ja) * | 1999-02-02 | 2000-08-15 | Mitsubishi Chemicals Corp | Ｃｖｄ装置および磁気記録媒体の製造方法 |
| JP2010082702A (ja) * | 2008-09-29 | 2010-04-15 | Tsugami Corp | ガイドブッシュ |
| JP2010082701A (ja) * | 2008-09-29 | 2010-04-15 | Tsugami Corp | コレットチャック |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A521 | Written amendment |
Effective date: 20041006 Free format text: JAPANESE INTERMEDIATE CODE: A523 |
|
| A621 | Written request for application examination |
Effective date: 20041006 Free format text: JAPANESE INTERMEDIATE CODE: A621 |
|
| A977 | Report on retrieval |
Effective date: 20070423 Free format text: JAPANESE INTERMEDIATE CODE: A971007 |
|
| A131 | Notification of reasons for refusal |
Effective date: 20070508 Free format text: JAPANESE INTERMEDIATE CODE: A131 |
|
| A02 | Decision of refusal |
Effective date: 20070911 Free format text: JAPANESE INTERMEDIATE CODE: A02 |