JPH11111770A - Semiconductor device and its manufacture - Google Patents

Abstract

PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing the same by which a high reliability with respect to thermal cycling or the like can be attained at a time of flip-chip mounting of a semiconductor chip on a circuit wiring board. SOLUTION: An Au ball 22 of 80 μm diameter is sandwiched between an insulating layer 14, adjacent to a chip electrode 12 of a semiconductor chip 10 turned upside down and a substrate electrode 18 of a circuit wiring board 16. The space between the semiconductor chip 10 and the circuit wiring board 16 in which the Au ball 22 is disposed is 60-70 μm. The lower end of the Au ball 22 is adhered to the substrate electrode 18 of the circuit wiring board 16. An Au wire 24 which is 30 μm in diameter and is connected to the Au ball 22 is crimped onto the chip electrode 12 of the semiconductor chip 10. In this way, the semiconductor chip 10 is flip-chip mounted on the circuit wiring board.

Description

DETAILED DESCRIPTION OF THE INVENTION

[0001]

BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device and a method of manufacturing the same, and more particularly to a semiconductor device having a semiconductor chip mounted on a circuit wiring board by flip chip bonding and a method of manufacturing the same.

[0002]

2. Description of the Related Art A conventional method of mounting a semiconductor chip on a circuit wiring board by a flip chip will be described with reference to sectional views shown in FIGS. First, the tip of the Au wire 42 having a diameter of, for example, 30 μm, which is inserted into the pore of the capillary 40, is melted using, for example, an electric spark or the like, and the Au wire
An Au ball having a diameter of 80 μm, for example, having a diameter of 2 to 3 times the diameter of 2 is formed. After the semiconductor chip 10 fixed on a support table (not shown) is aligned with the capillary 40, the capillary 40 is moved downward.
Then, a predetermined pressure is applied by the capillary 40, and A
The u-ball is crushed into a disk shape having a height of, for example, 20 to 30 μm, and is pressed on the chip electrode 46 of the semiconductor chip 44 by using, for example, an ultrasonic combined thermocompression method. Thus, height 2
A bump (protruding electrode) 48 made of an Au ball crushed into a disk shape of 0 to 30 μm is formed on the chip electrode 46 of the semiconductor chip 44 (see FIG. 15).

Next, the capillary 40 is moved in the lateral direction (see FIG. 16), and the chip electrode 46 of the semiconductor chip 44 is moved.
The Au wire 42 is torn off from the bump 48 pressed on the upper side. For this reason, a trace of the Au wire 42 torn off remains as a small protrusion 50 at the upper end of the bump 48 (see FIG. 17).

Next, the semiconductor chip 44 having the bumps 48 formed on the chip electrodes 46 is turned upside down and flip-chip mounted on the circuit wiring board 52. That is, the small projection 50, which is the lowermost end of the bump 48 of the inverted semiconductor chip 44, is brought into contact with the substrate electrode 54 of the circuit wiring substrate 52, and the chip electrode 46 of the semiconductor chip 44 and the substrate electrode 54 of the circuit wiring substrate 52 The conductive resin 56 is filled around the bump 48 sandwiched between the conductive resin 56 and the conductive resin 56. Thus, the chip electrode 46 of the semiconductor chip 44 and the substrate electrode 5 of the circuit wiring board 52
4 are electrically connected to each other by a bump 48 and a conductive resin 56 around the bump 48.

Subsequently, in order to enhance the reliability of flip-chip mounting, a resin 58 called, for example, an underfill is injected between the semiconductor chip 44 and the circuit wiring board 52 with the bumps 48 and the conductive resin 56 interposed therebetween. Then, the gap between the semiconductor chip 44 and the circuit wiring board 52 is filled (see FIG. 18).

[0006]

However, in the above-mentioned conventional flip chip mounting method, as shown in FIG.
Even when an Au ball having a thickness of 0 μm is formed, a predetermined pressure is applied to the Au ball using the capillary 40, for example, to a height of 2 μm.
The bumps 48 made of Au balls crushed into a disk shape have a height of at most 20 because they are crushed into a disk shape of 0 to 30 μm and pressed on the chip electrodes 46 of the semiconductor chip 44.
Only about 30 μm can be obtained.

[0007] Coffin-Manson
As shown in the equation (n-Manson), in a semiconductor device in which a semiconductor chip is flip-chip mounted on a circuit wiring board, generally, the height of a bump connected to the chip electrode of the semiconductor chip and the substrate electrode of the circuit wiring board is generally high. The higher the value, the higher the reliability of flip-chip mounting against thermal cycling tends to be. Therefore, the height of the bump is 20 to
The above-described conventional flip-chip mounting method, which can only take about 30 μm, has a problem in that the reliability with respect to a thermal cycle is not sufficient.

The semiconductor chip 44 is connected to the circuit wiring board 5
In flip-chip mounting on the semiconductor chip 44, the small projection 50, which is the lowermost end of the bump 48 of the semiconductor chip 44, only contacts the board electrode 54 of the circuit wiring board 52. And the contact resistance between the circuit wiring board 52 and the board electrode 54 increases. Therefore, as shown in FIG. 18, conductive resin 56 is filled around bumps 48 sandwiched between chip electrodes 46 of semiconductor chip 44 and substrate electrodes 54 of circuit wiring board 52, and bumps 4
8 and the conductive resin 56 around the semiconductor chip 4
4 and the substrate electrode 54 of the circuit wiring substrate 52
And are electrically connected. Therefore, the above-described conventional flip-chip mounting method that requires the conductive resin 56 increases the cost due to an increase in the number and complexity of the steps and an increase in materials involved in filling the conductive resin 56 around the bumps 48. Problems arose.

[0009] As a measure for preventing the height of the bump from being sufficiently high, a method of forming a wire loop on the bump has been proposed (Japanese Patent Publication No. 06-9546).
No. 8). However, in the method according to this proposal,
Since the wire loop formed on the bump is not strong enough to be directly connected to the substrate electrode of the circuit wiring board, the same as in the case of the conventional flip chip mounting method shown in FIG. It is necessary to use a combination of conductive resins. Therefore, even in the method according to this proposal, there is a problem that the cost is increased due to an increase in the number and complexity of the steps and an increase in the number of materials due to the filling of the conductive resin around the bumps.

The present invention has been made in view of the above problems, and provides a semiconductor device and a method of manufacturing the semiconductor device, which can obtain high reliability against thermal cycling when mounting a semiconductor chip on a circuit wiring board by flip chip mounting. The aim is to provide a method.

[0011]

The above objects can be attained by the following semiconductor device and a method of manufacturing the same according to the present invention. That is, a semiconductor device according to claim 1 is a semiconductor device in which a semiconductor chip is flip-chip mounted on a circuit wiring board, wherein a semiconductor chip is provided between an insulating layer adjacent to a chip electrode of the semiconductor chip and a substrate electrode of the circuit wiring board. A metal ball of a predetermined size is sandwiched between the metal balls. The lower end of the metal ball is adhered to the substrate electrode of the circuit wiring board, and the metal wire extending from the metal ball is placed on the chip electrode of the semiconductor chip. It is characterized by being crimped on.

As described above, in the semiconductor device according to the first aspect, since the metal ball is sandwiched between the insulating layer adjacent to the chip electrode of the semiconductor chip and the substrate electrode of the circuit wiring board, the metal ball is formed. Since the ball can be maintained in a sufficiently large state without being crushed, the distance between the semiconductor chip in which the metal ball is interposed and the circuit wiring board becomes larger than before. Therefore, the resistance to a thermal cycle or the like after flip-chip mounting is improved, and high reliability is obtained.

A metal wire extending from the metal ball is pressed onto a chip electrode of the semiconductor chip, and a metal as a medium for electrically connecting the chip electrode of the semiconductor chip and the substrate electrode of the circuit wiring board. By the presence of metal wires in addition to the balls, the stress generated due to the difference in linear expansion coefficient between the semiconductor chip and the circuit wiring board is absorbed, and the resistance to thermal cycles after flip chip mounting is improved, Reliability is further improved.

According to a second aspect of the present invention, there is provided a semiconductor device in which a semiconductor chip is flip-chip mounted on a circuit wiring board, the insulating layer being adjacent to a chip electrode of the semiconductor chip and a substrate electrode of the circuit wiring board. A metal ball of a predetermined size is sandwiched between the metal ball and the upper end of the metal ball is bonded to the chip electrode of the semiconductor chip, and a metal wire extending from the metal ball is formed on the circuit wiring board. It is characterized by being crimped on a substrate electrode.

As described above, in the semiconductor device according to the second aspect, since the metal ball is sandwiched between the chip electrode of the semiconductor chip and the insulating layer adjacent to the substrate electrode of the circuit wiring board, this metal Since the ball can be maintained in a sufficiently large state without being crushed, the distance between the semiconductor chip having the metal ball and the circuit wiring board becomes larger than before. Therefore,
As in the case of the semiconductor device according to the first aspect, resistance to a heat cycle after flip-chip mounting is improved,
High reliability is obtained.

A metal wire extending from the metal ball is pressed on a substrate electrode of a circuit wiring board,
The presence of metal wires in addition to metal balls as a medium for electrically connecting the chip electrodes of the semiconductor chip and the substrate electrodes of the circuit wiring board causes a difference in the coefficient of linear expansion between the semiconductor chip and the circuit wiring board. Is absorbed, the resistance to a thermal cycle or the like after flip chip mounting is improved, and the reliability is further improved.

According to a third aspect of the present invention, there is provided the semiconductor device according to the first or second aspect, wherein a predetermined resin is filled between the semiconductor chip having the metal balls and the circuit wiring board. With this configuration, the reliability of flip-chip mounting of the semiconductor chip on the circuit wiring board is improved.

According to a fourth aspect of the present invention, there is provided a method of manufacturing a semiconductor device in which a semiconductor chip is flip-chip mounted on a circuit wiring board. A first step of forming a metal ball, and placing the metal ball on an insulating layer adjacent to a chip electrode of a semiconductor chip, and pressing a metal wire extending from the metal ball onto the chip electrode. In step 2, the semiconductor chip is turned over, and a metal ball is sandwiched between the insulating layer adjacent to the chip electrode of the semiconductor chip and the substrate electrode of the circuit wiring board. And a third step of adhering to the substrate electrode.

Thus, in the method of manufacturing a semiconductor device according to the fourth aspect, a metal ball of a predetermined size is formed at the tip of the metal wire, and the insulating layer adjacent to the chip electrode of the inverted semiconductor chip is formed. By sandwiching the metal ball between the substrate and the substrate electrode of the circuit wiring board, the metal ball is not crushed with a predetermined pressure and crimped onto the chip electrode as in the related art, and the state immediately after the formation of the metal ball is eliminated. Therefore, the distance between the semiconductor chip and the circuit wiring board with the metal balls interposed therebetween can be made larger than before. Therefore, a semiconductor device having improved reliability against thermal cycles after flip-chip mounting and high reliability can be easily manufactured.

A metal wire extending from the metal ball is pressed onto the chip electrode of the semiconductor chip, and the metal ball is used as a medium for electrically connecting the chip electrode of the semiconductor chip and the substrate electrode of the circuit wiring board. In addition, the use of metal wires absorbs the stress generated due to the difference in the coefficient of linear expansion between the semiconductor chip and the circuit wiring board, thereby improving the resistance to thermal cycles after flip-chip mounting and improving reliability. Higher semiconductor devices can be easily manufactured.

According to a fifth aspect of the present invention, there is provided a method of manufacturing a semiconductor device in which a semiconductor chip is flip-chip mounted on a circuit wiring board. A first step of forming the metal ball, placing the metal ball on an insulating layer adjacent to the substrate electrode of the circuit wiring board, and pressing a metal wire extending from the metal ball onto the substrate electrode. In the second step, the semiconductor chip is turned over, and a metal ball is sandwiched between the chip electrode of the semiconductor chip and the insulating layer adjacent to the substrate electrode of the circuit wiring board. And a third step of adhering to the chip electrode.

Thus, in the method of manufacturing a semiconductor device according to the fifth aspect, a metal ball of a predetermined size is formed at the tip of the metal wire, and the chip electrode of the inverted semiconductor chip and the substrate of the circuit wiring board are turned over. Since the metal ball is sandwiched between the insulating layer adjacent to the electrode and the metal ball, the metal ball is not crushed with a predetermined pressure and crimped onto the chip electrode as in the related art. Therefore, the distance between the semiconductor chip and the circuit wiring board with the metal balls interposed therebetween can be made larger than before. Therefore, as in the case of the method of manufacturing a semiconductor device according to the fourth aspect, a semiconductor device having improved reliability against a thermal cycle after flip-chip mounting and high reliability can be easily manufactured.

A metal wire extending from the metal ball is pressed onto a substrate electrode of a circuit wiring board, and a metal as a medium for electrically connecting the chip electrode of the semiconductor chip and the substrate electrode of the circuit wiring board. By using metal wires in addition to balls, the stress generated due to the difference in linear expansion coefficient between the semiconductor chip and the circuit wiring board is absorbed,
A semiconductor device having improved resistance to thermal cycles after flip-chip mounting and higher reliability can be easily manufactured.

According to a sixth aspect of the present invention, there is provided a method of manufacturing a semiconductor device according to the fourth or fifth aspect, wherein the semiconductor chip having the metal ball interposed therein and the insulating layer of the circuit wiring board are provided. In this case, the reliability of mounting the semiconductor chip on the circuit wiring board is improved. In this case, since the distance between the semiconductor chip and the circuit wiring board on which the metal balls are interposed is larger than before, resin is easily injected into the gap between the semiconductor chip and the circuit wiring board, and the air gap is increased. Without filling,
Reliability is further improved.

[0025]

BRIEF DESCRIPTION OF THE DRAWINGS FIG.
An embodiment of the present invention will be described. (First Embodiment) FIG. 1 is a sectional view showing a flip-chip mounted semiconductor device according to a first embodiment of the present invention, and FIGS. 2 to 7 each show a method of manufacturing the semiconductor device shown in FIG. FIG. 4 is a process cross-sectional view for explaining FIG.

As shown in FIG. 1, on a semiconductor chip 10 on which a predetermined semiconductor element is formed, a chip electrode 12 which is a connection portion with the outside is arranged, and a portion other than these chip electrodes 12 is provided. Are covered by the insulating layer 14. Further, on the circuit wiring board 16 on which the semiconductor chip 10 is flip-chip mounted, substrate electrodes 18 which are connection portions with the semiconductor chip 10 are arranged, and portions other than the substrate electrodes 18 are covered by an insulating layer 20. Covered.

Then, the inverted semiconductor chip 10
Between the insulating layer 14 adjacent to the chip electrode 12 and the substrate electrode 18 of the circuit wiring substrate 16, for example, an A of 80 μm in diameter.
A u-ball 22 is pinched. However, since the Au ball 22 is slightly compressed by the insulating layer 14 of the semiconductor chip 10 and the substrate electrode 18 of the circuit wiring board 16, the semiconductor chip 10 and the circuit wiring board For example, the distance from 16 is 60 to 70 μm.
m. The lower end of the Au ball 22 is adhered to the substrate electrode 18 of the circuit wiring board 16 and
A with a diameter of, for example, 30 μmφ extending from the Au ball 22
The u wire 24 is pressed on the chip electrode 12 of the semiconductor chip 10.

Thus, the semiconductor chip 10 is flip-chip mounted on the circuit wiring board 16, and the chip electrodes 12 of the semiconductor chip 10 and the substrate electrodes 18 of the circuit wiring board 16 are electrically connected via the Au wires 24 and the Au balls 22. It is connected. Further, in order to increase the reliability of flip-chip mounting, a resin 26 called, for example, an underfill is injected between the semiconductor chip 10 with the Au ball 22 interposed and the circuit wiring board 16 so that the semiconductor chip 1
The gap between the circuit board 0 and the circuit wiring board 16 is filled.

Next, a method of manufacturing the semiconductor device shown in FIG. 1 will be described with reference to the process sectional views of FIGS. First,
Semiconductor chip 10 on which a predetermined semiconductor element is formed
On a support table (not shown). The semiconductor chip 10 has a chip electrode 1 serving as a connection portion with the outside.
2 are arranged, and portions other than the chip electrodes 12 are covered with an insulating layer 14.

Then, normal ball bonding (ball
In the same manner as in the case of the bonding method, an Au wire 24 having a diameter of, for example, 30 μm is inserted through the pores of the capillary 28, and the tip of the Au wire 24 is melted using, for example, an electric spark or the like, and the Au wire 24 is melted. 2 to 3 times the diameter of, for example, an 80 μm diameter Au ball 22 is formed.
reference).

Next, the semiconductor chip 10 and the capillary 2
After the alignment with No. 8, the Au wire 24 having the Au ball 22 formed at the tip thereof is sent out from the capillary 28 by about 100 to 200 μm downward (see FIG. 3).

Next, the capillary 28 is moved downward, and the Au ball 22 is moved to the chip electrode 1 of the semiconductor chip 10.
After contacting the insulating layer 14 adjacent to the capillary 2
8 is moved laterally and further downward, thereby placing the Au ball 22 on the insulating layer 14 and
The Au wire 24 extending from the Au ball 22 is deformed (see FIG. 4).

Next, the usual wedge bonding (we
The Au wire 24 extending from the Au ball 22 by, for example, a thermo-sonic bonding method using ultrasonic waves in the same manner as when the Au wire is connected to the inner lead of the lead frame using the dge bonding method. Is pressed onto the chip electrode 12 of the semiconductor chip 10. Thus, the Au ball 22 placed on the insulating layer 14 adjacent to the chip electrode 12 is electrically connected to the chip electrode 12 via the Au wire 24 (see FIG. 5).

Next, a circuit wiring board 16 is prepared. On the circuit wiring board 16, a substrate electrode 18 which is a connection portion with the semiconductor chip 10 is arranged, and portions other than the substrate electrode 18 are covered with an insulating layer 20. Then, the semiconductor chip 10 is turned upside down and flip-chip mounted on the circuit wiring board 16. That is, A is set between the insulating layer 14 adjacent to the chip electrode 12 of the inverted semiconductor chip 10 and the substrate electrode 18 of the circuit wiring substrate 16.
The u ball 22 is sandwiched, and the lower end of the Au ball 22 is adhered to the substrate electrode 18 of the circuit wiring board 16, and the Au ball 22 and the substrate electrode 18 are electrically connected.

At this time, the Au ball 22 is slightly compressed by the insulating layer 14 of the semiconductor chip 10 and the substrate electrode 18 of the circuit wiring board 16, but the Au ball 22 is pressed at a predetermined pressure by the capillary 28 as in the prior art. The Au ball 22 sandwiched between the semiconductor chip 10 and the circuit wiring board 16 has a size close to the state immediately after formation shown in FIG. The Au ball 22
Semiconductor chip 10 and circuit wiring board 16
Is larger than the conventional case, for example, 60 to
70 μm (see FIG. 6).

Next, in order to enhance the reliability of flip-chip mounting, a resin 26 called, for example, an underfill is injected between the semiconductor chip 10 with the Au balls 22 interposed therebetween and the circuit wiring board 16 to thereby improve the reliability of the semiconductor chip. The gap between the circuit board 10 and the circuit wiring board 16 is filled. At this time, the distance between the semiconductor chip 10 and the circuit wiring board 16 is, for example, 60 to
Since it is 70 μm, which is larger than the conventional case, the resin 26 can be easily injected and filled without voids. Thus, as shown in FIG. 1, the semiconductor chip 10 is flip-chip mounted on the circuit wiring board 16, and the chip electrode 12 of the semiconductor chip 10 and the substrate electrode 1 of the circuit wiring board 16 are provided.
Then, a semiconductor device in which the semiconductor device 8 is electrically connected to the semiconductor device via the Au wire 24 and the Au ball 22 is manufactured (see FIG. 7).

As described above, according to the present embodiment, Au
An Au ball 22 having a diameter of, for example, 80 μm is formed at the tip of the wire 24, and the Au ball 22 is attached to the semiconductor chip 10.
After being placed on the insulating layer 14 adjacent to the chip electrode 12 of the semiconductor chip 10, the insulating layer 14 adjacent to the chip electrode 12 of the inverted semiconductor chip 10 and the substrate electrode 18 of the circuit wiring board 16
And sandwiched between. As a result, the Au ball 22 itself is not crushed by the capillary 28 at a predetermined pressure by the capillary 28 and is pressed against the chip electrode 12 as in the related art, and the Au ball 22 is maintained in a state close to the size immediately after formation. Is possible, the distance between the semiconductor chip 10 with the Au ball 22 interposed therebetween and the circuit wiring board 16 can be set to, for example, 60 to 70 μm, which is larger than that in the related art. Resistance to thermal cycles and the like is improved, and high reliability can be obtained.

Since the distance between the semiconductor chip 10 with the Au balls 22 interposed therebetween and the circuit wiring board 16 is larger than before, the resin 26 is injected into the gap between the semiconductor chip 10 and the circuit wiring board 16. Is easily filled and filled without voids, so that reliability can be improved.

Further, the Au extending from the Au ball 22
A wire 24 is crimped on the chip electrode 12 of the semiconductor chip 10. As a medium for electrically connecting the chip electrode 12 of the semiconductor chip 10 and the substrate electrode 18 of the circuit wiring board 16, in addition to the Au ball 22, Au is used. The presence of the wires 24 absorbs the stress generated due to the difference in the coefficient of linear expansion between the semiconductor chip 10 and the circuit wiring board 16, so that the resistance to thermal cycles after flip-chip mounting is improved, and the reliability is improved. Properties can be further improved.

(Second Embodiment) FIG. 8 is a sectional view showing a flip-chip mounted semiconductor device according to a second embodiment of the present invention, and FIGS. 9 to 14 each show the semiconductor device shown in FIG. FIG. 9 is a process cross-sectional view for describing the manufacturing method of the device. The same components as those of the semiconductor device shown in FIGS. 1 to 7 are denoted by the same reference numerals, and description thereof will be omitted.

As shown in FIG. 8, on a semiconductor chip 10 on which predetermined semiconductor elements are formed, chip electrodes 12 as connection parts with the outside are arranged, and portions other than these chip electrodes 12 are arranged. Are covered by the insulating layer 14. Further, on the circuit wiring board 16 on which the semiconductor chip 10 is flip-chip mounted, substrate electrodes 18 which are connection portions with the semiconductor chip 10 are arranged, and portions other than the substrate electrodes 18 are covered by an insulating layer 20. Covered.

Then, the inverted semiconductor chip 10
Between the chip electrode 12 and the insulating layer 20 adjacent to the substrate electrode 18 of the circuit wiring board 16, for example, A having a diameter of 80 μm.
A u-ball 30 is clamped. However, since the Au ball 22 is slightly compressed by the chip electrode 12 of the semiconductor chip 10 and the insulating layer 20 of the circuit wiring board 16, the semiconductor chip 10 and the circuit wiring board The interval from 16 is, for example, 60 to 70
μm. The upper end of the Au ball 30 is adhered to the chip electrode 12 of the semiconductor chip 10 and extends from the Au ball 30, for example, with a diameter of 30 μmφ.
Au wire 32 is pressed on the board electrode 18 of the circuit wiring board 16.

Thus, the semiconductor chip 10 is flip-chip mounted on the circuit wiring board 16, and the chip electrode 12 of the semiconductor chip 10 and the substrate electrode 18 of the circuit wiring board 16 are electrically connected via the Au balls 30 and the Au wires 32. It is connected.

Next, a method of manufacturing the semiconductor device shown in FIG. 8 will be described with reference to the process sectional views of FIGS. First, the circuit wiring board 16 is fixed on a support table (not shown). The semiconductor chip 1 is provided on the circuit wiring board 16.
A substrate electrode 18 which is a connection portion with the substrate electrode 18 is arranged, and portions other than the substrate electrode 18 are covered with an insulating layer 20.

In the same manner as in the normal ball bonding method, the pores of the capillary 26 have a diameter of, for example, 30 μm.
After inserting the Au wire 32 of mφ, the Au wire 3
2 is melted using, for example, an electric spark or the like.
A having a diameter of 80 μm, for example, two to three times the diameter of the u wire 32
The u-ball 30 is formed (see FIG. 9).

Next, the circuit wiring board 16 and the capillary 2
After the alignment with No. 6, the Au wire 32 having the Au ball 30 formed at the tip portion is sent out from the capillary 26 by about 100 to 200 μm downward (see FIG. 10).

Next, the capillary 26 is moved downward, and the Au ball 30 is moved to the substrate electrode 18 of the circuit wiring board 16.
After contacting the insulating layer 20 adjacent to the
Is moved laterally and further downward, thereby placing the Au ball 30 on the insulating layer 20 and
The Au wire 32 extending from the Au ball 30 is deformed (see FIG. 11).

Next, in the same manner as when an Au wire is connected to the inner lead of a lead frame by using a usual wedge bonding method, the Au wire 32 extending from the Au ball 30 by, for example, an ultrasonic combined thermocompression bonding method. Is pressed onto the board electrode 18 of the circuit wiring board 16.
Thus, the Au ball 30 placed on the insulating layer 20 adjacent to the substrate electrode 18 is electrically connected to the substrate electrode 18 via the Au wire 32 (see FIG. 12).

Next, a semiconductor chip 10 on which a predetermined semiconductor element is formed is prepared. This semiconductor chip 10
Are provided with chip electrodes 12 which are connection portions with the outside, and portions other than the chip electrodes 12 are covered with an insulating layer 14. Then, the semiconductor chip 10 is turned upside down and flip-chip mounted on the circuit wiring board 16. That is, an Au ball 30 is sandwiched between the chip electrode 12 of the inverted semiconductor chip 10 and the insulating layer 20 adjacent to the substrate electrode 18 of the circuit wiring board 16, and the upper end of the Au ball 30 is placed on the semiconductor chip 10. Tip electrode 1
Then, the Au ball 30 and the chip electrode 12 are electrically connected.

At this time, although the Au ball 30 is slightly compressed by the chip electrode 12 of the semiconductor chip 10 and the insulating layer 20 of the circuit wiring board 16, the Au ball 30 is pressed at a predetermined pressure by the capillary 26 as in the prior art. The Au ball 30 sandwiched between the semiconductor chip 10 and the circuit wiring board 16 has a size close to the state immediately after formation shown in FIG. This Au ball 3
Semiconductor chip 10 and circuit wiring board 1 interposed
6 is larger than the conventional case, for example, 60
７０70 μm (see FIG. 13).

Next, in order to enhance the reliability of flip-chip mounting, a resin 26 called, for example, an underfill is injected between the semiconductor chip 10 with the Au balls 30 interposed therebetween and the circuit wiring board 16 so as to increase the reliability of the semiconductor chip. The gap between the circuit board 10 and the circuit wiring board 16 is filled. At this time, the distance between the semiconductor chip 10 and the circuit wiring board 16 is, for example, 60 to
Since it is 70 μm, which is larger than the conventional case, the resin 26 can be easily injected and filled without voids.

In this way, as shown in FIG. 8, the semiconductor chip 10 is flip-chip mounted on the circuit wiring board 16, and the chip electrodes 12 of the semiconductor chip 10 and the substrate electrodes 18 of the circuit wiring board 16 are connected to the Au balls 30 and Au. A semiconductor device electrically connected via the wire 32 is manufactured (see FIG. 14).

As described above, according to the present embodiment, Au
An Au ball 30 having a diameter of, for example, 80 μm is formed at the tip of the wire 32, and the Au ball 30 is attached to the circuit wiring board 16
After being placed on the insulating layer 20 adjacent to the substrate electrode 18 of
It is sandwiched between the chip electrode 12 of the inverted semiconductor chip 10 and the insulating layer 20 adjacent to the substrate electrode 18 of the circuit wiring board 16. As a result, unlike the related art, the Au ball 30 itself is not crushed by the capillary 26 at a predetermined pressure to be pressed on the chip electrode 12, and
Since it becomes possible to maintain the Au ball 30 in a state close to the size immediately after formation, the distance between the semiconductor chip 10 and the circuit wiring board 16 with the Au ball 30 interposed therebetween is, for example, 60 to 70 μm, Since it can be larger than in the case of the first embodiment, the resistance to a thermal cycle or the like after flip-chip mounting is improved, and high reliability can be obtained.

Since the distance between the semiconductor chip 10 with the Au ball 30 interposed therebetween and the circuit wiring board 16 is larger than before, the resin 26 is injected into the gap between the semiconductor chip 10 and the circuit wiring board 16. Is easily filled and filled without voids, so that the reliability can be improved as in the case of the first embodiment.

The Au extending from the Au ball 30
A wire 32 is crimped on the substrate electrode 18 of the circuit wiring board 16. As a medium for electrically connecting the chip electrode 12 of the semiconductor chip 10 and the substrate electrode 18 of the circuit wiring board 16, in addition to the Au ball 30, The presence of the Au wire 32 absorbs the stress generated due to the difference in linear expansion coefficient between the semiconductor chip 10 and the circuit wiring board 16 as in the case of the first embodiment. Resistance to a heat cycle or the like after mounting is improved, and reliability can be further improved.

[0056]

As described above, according to the semiconductor device and the method of manufacturing the same of the present invention, the following effects can be obtained. That is, according to the semiconductor device of the first aspect, since the metal ball is sandwiched between the insulating layer adjacent to the chip electrode of the semiconductor chip and the substrate electrode of the circuit wiring board, the metal ball is pressed. Since it is possible to maintain a sufficiently large state without crushing, the distance between the semiconductor chip in which the metal ball is interposed and the circuit wiring board can be made larger than before. Therefore, a semiconductor device having high reliability can be realized by improving the resistance to a thermal cycle or the like after flip-chip mounting.

A metal wire extending from the metal ball is pressed on the chip electrode of the semiconductor chip, and a metal as a medium for electrically connecting the chip electrode of the semiconductor chip and the substrate electrode of the circuit wiring board. The presence of metal wires in addition to the balls absorbs the stress generated by the difference in the coefficient of linear expansion between the semiconductor chip and the circuit wiring board, further improving the reliability against thermal cycles after flip chip mounting Can be done.

According to the semiconductor device of the present invention, since the metal ball is sandwiched between the chip electrode of the semiconductor chip and the insulating layer adjacent to the substrate electrode of the circuit wiring board, this metal Because it is possible to keep the ball large enough without crushing the ball,
The distance between the semiconductor chip and the circuit wiring board with the metal balls interposed therebetween can be made larger than before.
Therefore, similarly to the case of the semiconductor device according to the first aspect, it is possible to realize a semiconductor device having high reliability by improving resistance to a thermal cycle after flip-chip mounting.

A metal wire extending from the metal ball is pressed on a substrate electrode of a circuit wiring board,
The presence of metal wires in addition to metal balls as a medium for electrically connecting the chip electrodes of the semiconductor chip and the substrate electrodes of the circuit wiring board causes a difference in the coefficient of linear expansion between the semiconductor chip and the circuit wiring board. As a result, the stress generated is absorbed, and the reliability against a thermal cycle or the like after flip-chip mounting can be further improved.

According to the semiconductor device of the third aspect, the predetermined resin is filled between the semiconductor chip having the metal balls and the circuit wiring board, so that the circuit wiring board of the semiconductor chip is filled. The reliability of flip-chip mounting on a semiconductor device can be increased.

According to the method of manufacturing a semiconductor device of the present invention, a metal ball of a predetermined size is formed at the tip of the metal wire, and the insulating layer adjacent to the chip electrode of the inverted semiconductor chip is formed. By sandwiching the metal ball between the circuit electrode and the substrate electrode, the metal ball itself is not crushed with a predetermined pressure and crimped onto the chip electrode as in the related art, and immediately after the metal ball is formed. Can be maintained in a sufficiently large state close to the state described above, so that the distance between the semiconductor chip with the metal balls interposed and the circuit wiring board can be made larger than before. Therefore, a semiconductor device having high reliability against a thermal cycle or the like after flip-chip mounting can be easily manufactured.

A metal wire extending from the metal ball is pressed onto a chip electrode of a semiconductor chip, and a metal ball is used as a medium for electrically connecting the chip electrode of the semiconductor chip and the substrate electrode of the circuit wiring board. By using metal wires, the stress generated due to the difference in the coefficient of linear expansion between the semiconductor chip and the circuit wiring board is absorbed, so that a semiconductor device with higher reliability against thermal cycling after flip chip mounting can be easily manufactured. Can be manufactured.

According to the method of manufacturing a semiconductor device of the fifth aspect, a metal ball of a predetermined size is formed at the tip of a metal wire, and the chip electrode of the inverted semiconductor chip and the substrate of the circuit wiring board are turned upside down. By sandwiching this metal ball between the insulating layer adjacent to the electrode, the metal ball itself is not crushed at a predetermined pressure and crimped onto the chip electrode as in the related art, and immediately after the metal ball is formed. Can be maintained in a sufficiently large state close to the state described above, so that the distance between the semiconductor chip with the metal balls interposed and the circuit wiring board can be made larger than before. Therefore, as in the case of the method of manufacturing a semiconductor device according to the fourth aspect, it is possible to easily manufacture a semiconductor device having high reliability against a heat cycle after flip-chip mounting.

A metal wire extending from the metal ball is pressed onto a substrate electrode of the circuit wiring board, and the metal ball is used as a medium for electrically connecting the chip electrode of the semiconductor chip and the substrate electrode of the circuit wiring board. Since the stress generated due to the difference in linear expansion coefficient between the semiconductor chip and the circuit wiring board is absorbed by using other metal wires, as in the case of the method of manufacturing a semiconductor device according to claim 4,
It is possible to easily manufacture a semiconductor device having higher reliability against a thermal cycle or the like after flip-chip mounting.

A method of manufacturing a semiconductor device according to a sixth aspect of the present invention includes a step of filling a predetermined resin between a semiconductor chip having the metal balls interposed therein and a circuit wiring board insulating layer. The reliability of flip-chip mounting of the chip on the circuit wiring board can be increased, and the distance between the semiconductor chip and the circuit wiring board with the metal balls interposed becomes larger than before, so that the semiconductor chip and the circuit Since it is easy to fill the gap with the wiring board with the resin, it is possible to improve the throughput and further improve the reliability.

[Brief description of the drawings]

FIG. 1 is a cross-sectional view illustrating a flip-chip mounted semiconductor device according to a first embodiment of the present invention.

FIG. 2 is a process sectional view (part 1) for describing the method for manufacturing the semiconductor device shown in FIG. 1;

FIG. 3 is a process sectional view (part 2) for describing the method for manufacturing the semiconductor device shown in FIG. 1;

FIG. 4 is a process sectional view (part 3) for describing the method for manufacturing the semiconductor device shown in FIG.

FIG. 5 is a process sectional view (part 4) for describing the method for manufacturing the semiconductor device shown in FIG.

FIG. 6 is a process sectional view (part 5) for describing the method for manufacturing the semiconductor device shown in FIG.

FIG. 7 is a process sectional view (part 6) for describing the method for manufacturing the semiconductor device shown in FIG.

FIG. 8 is a cross-sectional view illustrating a flip-chip mounted semiconductor device according to a second embodiment of the present invention.

FIG. 9 is a process sectional view (part 1) for describing the method for manufacturing the semiconductor device shown in FIG. 8;

FIG. 10 is a process sectional view (part 2) for describing the method for manufacturing the semiconductor device shown in FIG.

FIG. 11 is a process sectional view (part 3) for describing the method for manufacturing the semiconductor device shown in FIG.

FIG. 12 is a process sectional view (part 4) for describing the method for manufacturing the semiconductor device shown in FIG.

13 is a process sectional view (part 5) for describing the method for manufacturing the semiconductor device shown in FIG.

FIG. 14 is a process sectional view (part 6) for describing the method for manufacturing the semiconductor device shown in FIG.

FIG. 15 is a process sectional view (part 1) for describing a conventional flip-chip mounting method.

FIG. 16 is a process sectional view (part 2) for describing the conventional flip-chip mounting method.

FIG. 17 is a process sectional view (part 3) for describing the conventional flip-chip mounting method.

FIG. 18 is a process sectional view (part 4) for describing the conventional flip-chip mounting method.

[Explanation of symbols]

DESCRIPTION OF SYMBOLS 10 ... Semiconductor chip, 12 ... Chip electrode, 14 ... Insulating layer, 16 ... Circuit wiring board, 18 ... Board electrode, 20 ... Insulating layer, 22 ... Au ball, 24 ... Au wire, 26 ... Resin, 28 ... Capillary, 30 ... Au ball, 32 ... Au
Wire, 40: Capillary, 42: Metal wire, 44:
Semiconductor chip, 46: chip electrode, 48: bump, 50
... small projections, 52 ... circuit wiring board, 54 ... board electrodes, 5
6 ... conductive resin, 58 ... resin.

Claims (6)

[Claims] 1. A semiconductor device in which a semiconductor chip is flip-chip mounted on a circuit wiring board, wherein a predetermined distance is provided between an insulating layer adjacent to a chip electrode of the semiconductor chip and a substrate electrode of the circuit wiring board. A metal ball having a size is sandwiched, and a lower end of the metal ball is adhered to the substrate electrode of the circuit wiring board, and a metal wire extending from the metal ball is provided on the semiconductor chip. A semiconductor device being crimped on a chip electrode. 2. A semiconductor device in which a semiconductor chip is flip-chip mounted on a circuit wiring board, wherein a predetermined distance is provided between a chip electrode of the semiconductor chip and an insulating layer adjacent to the substrate electrode of the circuit wiring board. A metal ball of a size is sandwiched, and an upper end of the metal ball is adhered to the chip electrode of the semiconductor chip, and a metal wire extending from the metal ball is connected to the metal wiring of the circuit wiring board. A semiconductor device which is crimped on a substrate electrode. 3. The semiconductor device according to claim 1, wherein a predetermined resin is filled between the semiconductor chip having the metal balls interposed and the circuit wiring board. Semiconductor device. 4. A method of manufacturing a semiconductor device in which a semiconductor chip is flip-chip mounted on a circuit wiring board, wherein a first step of melting a tip of a metal wire to form a metal ball of a predetermined size; A second step of placing the metal ball on an insulating layer adjacent to a chip electrode of the semiconductor chip and crimping the metal wire extending from the metal ball onto the chip electrode; The metal ball is sandwiched between the insulating layer adjacent to the chip electrode of the semiconductor chip and the substrate electrode of the circuit wiring substrate, and a lower end of the metal ball is placed on the substrate of the circuit wiring substrate. A method of manufacturing a semiconductor device, comprising: a third step of bonding to an electrode. 5. A method of manufacturing a semiconductor device in which a semiconductor chip is flip-chip mounted on a circuit wiring board, comprising: a first step of melting a tip of a metal wire to form a metal ball of a predetermined size; A second step of placing the metal ball on an insulating layer adjacent to the substrate electrode of the circuit wiring board and pressing the metal wire extending from the metal ball onto the substrate electrode;
Turning the semiconductor chip upside down, clamping the metal ball between a chip electrode of the semiconductor chip and the insulating layer adjacent to the substrate electrode of the circuit wiring board, and an upper end of the metal ball Bonding a semiconductor chip to the chip electrode of the semiconductor chip. 6. The method for manufacturing a semiconductor device according to claim 4, further comprising a step of filling a predetermined resin between the semiconductor chip having the metal balls interposed therebetween and the circuit wiring board. A method for manufacturing a semiconductor device, comprising: