JPH1069533A - Non-contact ic card - Google Patents
Non-contact ic cardInfo
- Publication number
- JPH1069533A JPH1069533A JP9058164A JP5816497A JPH1069533A JP H1069533 A JPH1069533 A JP H1069533A JP 9058164 A JP9058164 A JP 9058164A JP 5816497 A JP5816497 A JP 5816497A JP H1069533 A JPH1069533 A JP H1069533A
- Authority
- JP
- Japan
- Prior art keywords
- coil
- card
- contact
- module
- circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000005540 biological transmission Effects 0.000 claims abstract description 90
- 238000004804 winding Methods 0.000 claims abstract description 10
- 238000010168 coupling process Methods 0.000 claims description 77
- 230000008878 coupling Effects 0.000 claims description 72
- 238000005859 coupling reaction Methods 0.000 claims description 72
- 239000000463 material Substances 0.000 claims description 22
- 238000012545 processing Methods 0.000 claims description 13
- 230000002093 peripheral effect Effects 0.000 claims description 10
- 239000010409 thin film Substances 0.000 claims description 10
- 238000006243 chemical reaction Methods 0.000 claims description 9
- 239000010408 film Substances 0.000 claims description 6
- 239000011248 coating agent Substances 0.000 claims description 3
- 238000000576 coating method Methods 0.000 claims description 3
- 230000001902 propagating effect Effects 0.000 claims description 2
- 239000003990 capacitor Substances 0.000 abstract description 61
- 230000009351 contact transmission Effects 0.000 abstract description 3
- 238000010586 diagram Methods 0.000 description 20
- 239000000758 substrate Substances 0.000 description 16
- 239000004020 conductor Substances 0.000 description 15
- 239000010410 layer Substances 0.000 description 14
- 230000007246 mechanism Effects 0.000 description 12
- 239000002184 metal Substances 0.000 description 9
- 230000005672 electromagnetic field Effects 0.000 description 8
- 230000008901 benefit Effects 0.000 description 6
- 230000015572 biosynthetic process Effects 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 6
- 230000000694 effects Effects 0.000 description 5
- 238000000034 method Methods 0.000 description 5
- 230000010355 oscillation Effects 0.000 description 5
- 238000009499 grossing Methods 0.000 description 4
- 230000001965 increasing effect Effects 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 230000006872 improvement Effects 0.000 description 3
- 230000001681 protective effect Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000003989 dielectric material Substances 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000003475 lamination Methods 0.000 description 2
- 238000003754 machining Methods 0.000 description 2
- 239000011241 protective layer Substances 0.000 description 2
- 239000011347 resin Substances 0.000 description 2
- 229920005989 resin Polymers 0.000 description 2
- 230000008054 signal transmission Effects 0.000 description 2
- 239000004642 Polyimide Substances 0.000 description 1
- 241001428397 Taito Species 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000008393 encapsulating agent Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 230000004907 flux Effects 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920001721 polyimide Polymers 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000009966 trimming Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K7/00—Methods or arrangements for sensing record carriers, e.g. for reading patterns
- G06K7/10—Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation
- G06K7/10009—Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation sensing by radiation using wavelengths larger than 0.1 mm, e.g. radio-waves or microwaves
- G06K7/10158—Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation sensing by radiation using wavelengths larger than 0.1 mm, e.g. radio-waves or microwaves methods and means used by the interrogation device for reliably powering the wireless record carriers using an electromagnetic interrogation field
- G06K7/10178—Methods or arrangements for sensing record carriers, e.g. for reading patterns by electromagnetic radiation, e.g. optical sensing; by corpuscular radiation sensing by radiation using wavelengths larger than 0.1 mm, e.g. radio-waves or microwaves methods and means used by the interrogation device for reliably powering the wireless record carriers using an electromagnetic interrogation field including auxiliary means for focusing, repeating or boosting the electromagnetic interrogation field
-
- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06K—GRAPHICAL DATA READING; PRESENTATION OF DATA; RECORD CARRIERS; HANDLING RECORD CARRIERS
- G06K19/00—Record carriers for use with machines and with at least a part designed to carry digital markings
- G06K19/06—Record carriers for use with machines and with at least a part designed to carry digital markings characterised by the kind of the digital marking, e.g. shape, nature, code
- G06K19/067—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components
- G06K19/07—Record carriers with conductive marks, printed circuits or semiconductor circuit elements, e.g. credit or identity cards also with resonating or responding marks without active components with integrated circuit chips
- G06K19/077—Constructional details, e.g. mounting of circuits in the carrier
- G06K19/07749—Constructional details, e.g. mounting of circuits in the carrier the record carrier being capable of non-contact communication, e.g. constructional details of the antenna of a non-contact smart card
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48225—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/48227—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/01—Chemical elements
- H01L2924/01087—Francium [Fr]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/19—Details of hybrid assemblies other than the semiconductor or other solid state devices to be connected
- H01L2924/1901—Structure
- H01L2924/1904—Component type
- H01L2924/19041—Component type being a capacitor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/30107—Inductance
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/30—Technical effects
- H01L2924/301—Electrical effects
- H01L2924/3011—Impedance
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Theoretical Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Computer Vision & Pattern Recognition (AREA)
- Artificial Intelligence (AREA)
- General Health & Medical Sciences (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Near-Field Transmission Systems (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、非接触型情報媒体
に関し、詳しくは、オフィス・オートメーション（Offi
ce Automation,OA）、ファクトリー・オートメーション
（Factory Automation,FA）、 セキュリティー（Securi
ty）分野等で使用されるＩＣカード等の情報媒体におい
て、電磁結合方式によって電源電力の受電、ならびに信
号の授受をＩＣカードに電気接点を設けることなく非接
触状態で行う非接触ＩＣカードに関する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a non-contact information medium, and more particularly, to office automation (Offi).
ce Automation, OA), Factory Automation (Factory Automation, FA), Security (Securi)
ty) An information medium such as an IC card used in the field, etc., relates to a non-contact IC card that receives power from a power source and transmits / receives a signal by an electromagnetic coupling method in a non-contact state without providing an electric contact on the IC card.
【０００２】[0002]
【従来の技術】半導体メモリーなどを内蔵するＩＣカー
ドの登場により、従来の磁気カードなどに比べて記憶容
量が飛躍的に増大すると共に、マイクロコンピュータ等
の半導体処理装置を内蔵することによってＩＣカード自
体が演算処理機能を有することで情報媒体に高いセキュ
リティー性を付与することができるようになった。2. Description of the Related Art With the advent of an IC card having a built-in semiconductor memory and the like, the storage capacity has been dramatically increased as compared with a conventional magnetic card and the like, and the IC card itself has been built in by incorporating a semiconductor processing device such as a microcomputer. Has an arithmetic processing function so that an information medium can be provided with high security.
【０００３】一般的にＩＣカードは、プラスチックなど
のカード本体に半導体メモリー等のＩＣが内蔵され、カ
ード表面に外部読み書き装置との接続用の導電性端子が
設けられている。In general, an IC card has a built-in IC such as a semiconductor memory in a card body made of plastic or the like, and a conductive terminal for connection to an external reading / writing device is provided on the surface of the card.
【０００４】しかしながら、外部接続端子を設けたＩＣ
カードでは、端子が外部に露出している為、その端子の
接触部の汚れ、酸化、腐食、破損等による接触不良が発
生する。また、人体やカードに蓄積された静電気が人体
と接触端子との接触などにより放電され、カードに内蔵
されたＩＣの破壊や、誤って高電圧を接続端子に印加す
ることによる損傷に対して無防備である。However, an IC provided with an external connection terminal
In the card, since the terminals are exposed to the outside, poor contact occurs due to dirt, oxidation, corrosion, breakage, etc. of the contact portions of the terminals. In addition, static electricity accumulated in the human body and the card is discharged by contact between the human body and the contact terminals, etc., and there is no protection against damage to the IC built into the card or damage due to accidentally applying a high voltage to the connection terminals. It is.
【０００５】また、ＩＣカードと外部読み書き装置との
データの交信のためには、ＩＣカードをその装置に挿入
しなければならないという煩雑さがあった。この理由に
より、同様の煩雑さで有れば磁気カードで充足されるの
で鉄道の乗車券等のゲート管理や出退勤管理などにＩＣ
カードを導入することがためらわれている。[0005] Further, in order to exchange data between the IC card and the external read / write device, there is a trouble that the IC card must be inserted into the device. For this reason, if the complexity is the same, the magnetic card will suffice.
It is hesitant to introduce a card.
【０００６】これらの問題を解決するために、空間に高
周渡電磁界や超音波、光などの振動エネルギーの場を設
け、そのエネルギーを吸収、整流してカードに内蔵され
た電子回路を駆動する直流電力源とし、この場の交流成
分の周波数をそのまま用いるか、或いは逓倍や逓降して
識別信号とし、この識別信号をコイルやコンデンサなど
の結合器を介してデータをマイクロコンピュータなどの
情報処理回路に伝送するような非接触ＩＣカードが提案
されている。この非接触ＩＣカードの出現により、安全
性が高まると共に、ゲート通過に際し、カードの携帯者
は設置された読み取り装置に接近するだけでよくなり、
データ交信のための煩雑さは軽減された。In order to solve these problems, a space for a vibration energy such as a high-frequency electromagnetic field, ultrasonic waves, or light is provided in a space, and the energy is absorbed and rectified to drive an electronic circuit built in the card. DC power source to use the frequency of the AC component of this field as it is, or to multiply or down, and use it as an identification signal, and use this identification signal as information such as a microcomputer via a coupler such as a coil or a capacitor. A non-contact IC card for transmitting to a processing circuit has been proposed. With the advent of this non-contact IC card, security is enhanced, and when passing through the gate, the card carrier only needs to approach the installed reading device,
The complexity for data communication has been reduced.
【０００７】上述した非接触ＩＣカードへの電力の供給
手段としては、電池を内蔵する手段も考案されている
が、電池を内蔵することによりカード本体が厚くなった
り、電池交換などの問題が生じるため上記のようにカー
ドに電池を搭載しないで、受信したエネルギーを電力に
変換する方法が多く採用され、各種の結合方式が提案さ
れている。そのなかで、実用的な結合方式として容量結
合方式と磁気結合方式があるが、コンデンサを用いた容
量方式では、エネルギーの伝達効率が大きくないこと、
および、カードと読み取り機の間隔の変化により容量変
化が発生し、通信信頼性が低い為、磁気結合方式が主流
となっている。As means for supplying power to the above-mentioned non-contact IC card, means for incorporating a battery has been devised. However, incorporating a battery causes problems such as the card body becoming thicker and battery replacement. Therefore, as described above, a method of converting received energy into electric power without mounting a battery on a card is often used, and various coupling methods have been proposed. Among them, there are a capacitive coupling method and a magnetic coupling method as practical coupling methods, but in the capacitance method using a capacitor, energy transmission efficiency is not large,
In addition, a change in the distance between the card and the reader causes a change in capacity, and the communication reliability is low.
【０００８】しかしながら、従来の非接触ＩＣカード
は、単線のスパイラルコイルによって電力およびデータ
の伝送を行うので、伝送効率が低い。このため、ドライ
ブユニットであるリーダ・ライタから送出する電力が充
分でなかったり、非接触ＩＣカードのコイルとリーダ・
ライタのコイルとの間隔が大きいと正確な伝送が行われ
ず、非接触ＩＣカードが正常に機能しなくなるという問
題があった。However, the conventional non-contact IC card transmits power and data using a single-wire spiral coil, and therefore has low transmission efficiency. For this reason, the power transmitted from the reader / writer, which is the drive unit, is not sufficient, or the coil of the non-contact IC card and the reader / writer are not connected.
If the distance between the coil of the writer and the writer is large, there is a problem that accurate transmission is not performed and the non-contact IC card does not function normally.
【０００９】そこで、この伝達効率を改善するために、
幾つかの提案がなされている。例えば、第１の従来例と
して特開平２−７８３８号公報に開示されたものがあ
る。これによれば、変成器の一次巻線及び二次巻線間の
電力結合を実現するための装置が、前記一次巻線と並列
に第１コンデンサを有しており、この一次タンク回路
は、その一端において電圧源に接続され、他端におい
て、所定の周波数で動作するスイッチング回路を通じて
接地されているものである。前記一次巻線と密結合し、
並列に第２コンデンサを有する三次巻線を付加すること
によって、伝達効率を改善するものである。Therefore, in order to improve the transmission efficiency,
Several proposals have been made. For example, a first conventional example is disclosed in Japanese Patent Application Laid-Open No. 2-7838. According to this, an apparatus for realizing power coupling between a primary winding and a secondary winding of a transformer has a first capacitor in parallel with the primary winding, and the primary tank circuit includes: One end is connected to a voltage source, and the other end is grounded through a switching circuit operating at a predetermined frequency. Tightly coupled with the primary winding,
The transmission efficiency is improved by adding a tertiary winding having a second capacitor in parallel.
【００１０】図１３を用いて、この従来例の具体例につ
いて更に説明する。図１３によれば、クロック信号Ｖｃ
が、抵抗Ｒ１，Ｒ３を通じてＦＥＴ１００、２００をド
ライブするために用いられている。ＦＥＴ１００、２０
０がオンになると、ドライブノードＢが、Ｒ２を通じて
接地される。抵抗Ｒ２は、一次コイルＬ１を通して流れ
る最大電流を告１限するものである。同様に、コンデン
サＣ３は、電圧源における配線インダクタンスに関連し
た影響を除去するものである。コイルＬ２はコイルＬ１
と密結合されている。また、磁性体コア１０１と１０２
は空気間隙によって隔てられている。A specific example of this conventional example will be further described with reference to FIG. According to FIG. 13, the clock signal Vc
Are used to drive FETs 100 and 200 through resistors R1 and R3. FET 100, 20
When 0 turns on, drive node B is grounded through R2. The resistor R2 limits the maximum current flowing through the primary coil L1. Similarly, capacitor C3 eliminates effects associated with wiring inductance in the voltage source. Coil L2 is coil L1
Is tightly coupled with Also, the magnetic cores 101 and 102
Are separated by an air gap.
【００１１】コイルＬ１を流れる電流が変化するとＬ１
自体の変化に対するリアクタンスにより、５Ｖ電源とコ
イルＬ１自体の磁束との間で連続的にエネルギーが変換
される。磁界エネルギーは磁性体コア１０１によって吸
収され、当該コアが素子Ｌ２及びＣ２よりなる共振タン
ク回路に当該エネルギーを伝達する。結果として、ノー
ドＢにおける電圧の瞬時値（Ｖｂ）はＦＥＴ１００がオ
ンになった時点で接地電位（＝０Ｖ）ヘ向けて変化す
る。When the current flowing through the coil L1 changes, L1
Energy is continuously converted between the 5V power supply and the magnetic flux of the coil L1 itself due to the reactance to its own change. The magnetic field energy is absorbed by the magnetic core 101, and the core transmits the energy to the resonance tank circuit including the elements L2 and C2. As a result, the instantaneous value (Vb) of the voltage at the node B changes toward the ground potential (= 0 V) when the FET 100 is turned on.
【００１２】ＦＥＴ１００、２００がオンになると、コ
イルＬ１を通じて流れる電流は以前と同一方向に流れよ
うとする。従って、Ｖｂはより正の方向に変化しコンデ
ンサＣ１に電流が流れる。実際、ＦＥＴ１００、２００
がオンになると一次タンク回路は別々の素子値によって
決定される周波数で共振する。この時、一次回路全体は
自由振動となる。When the FETs 100 and 200 are turned on, the current flowing through the coil L1 tends to flow in the same direction as before. Therefore, Vb changes in a more positive direction, and a current flows through the capacitor C1. In fact, FET100, 200
Turns on, the primary tank circuit resonates at a frequency determined by the discrete element values. At this time, the entire primary circuit becomes free oscillation.
【００１３】ノードＡにおける電圧の瞬時値（Ｖａ）
は、平均直流電圧＋５Ｖを有し実質的に正弦波状に振動
する。電圧Ｖａ及びＶｂは、空間間隙インターフェース
を通した負荷インピーダンスＲLへの電力伝達を最適化
するように協調している。コイルＬ３は、変成器の二次
側に関する誘導性負荷を表し、最大電力伝達はキャパシ
タを抵抗ＲLに直列に付加することで実現され、このコ
ンデンサは，コイルＬ３と電力伝達周波数で直列共振す
るように選択される。結果として、素子Ｃ１、Ｌ１、Ｃ
２、Ｌ２よりなるタンク回路と素子Ｃ２、Ｌ２よりなる
共振器に位相の反転した電圧王が発生し、倍電圧回路を
構成することで、送信端の電源電圧を比較的低くして高
い出力電圧を得ている。The instantaneous value (Va) of the voltage at node A
Has an average DC voltage of +5 V and oscillates substantially in a sinusoidal manner. The voltages Va and Vb are coordinated to optimize power transfer through the clearance interface to the load impedance RL. Coil L3 represents an inductive load on the secondary side of the transformer, and maximum power transfer is achieved by adding a capacitor in series with resistor RL, which capacitor resonates in series with coil L3 at the power transfer frequency. Is selected. As a result, the elements C1, L1, C
2. A voltage king whose phase is inverted is generated in the tank circuit composed of L2 and the resonator composed of the elements C2 and L2, and by configuring a voltage doubler circuit, the power supply voltage at the transmitting end is relatively reduced and the output voltage is increased. Have gained.
【００１４】第２の従来例としては、特開昭６３−２２
４６３５号公報に示されるものがある。これは、磁気結
合により非接触式に電力を供給する装置であり、送電用
磁気結合素子に並列に容量性素子を接続したものであ
る。A second conventional example is disclosed in JP-A-63-22.
There is one disclosed in Japanese Patent No. 4635. This is a device for supplying electric power in a non-contact manner by magnetic coupling, in which a capacitive element is connected in parallel with a power transmission magnetic coupling element.
【００１５】図１４の当該装置の等価回路を用いて具体
的に説明する。送電状態でのインダクタンス１３４とコ
ンデンサ１３２とが、図示しない送電用コイルに印加さ
れる電流の周波数よりも高い周波数で並列共振するよう
なコンデンサ１３２の値Ｃr を選択する。この選択によ
り、インダクタンス１３４とコンデンサ１３２は共振周
波数ｆR の発振源を構成することになり、共振エネルギ
ーも負荷側に流れるので、全体的に送電効率が向上する
ことになる。A specific description will be given using an equivalent circuit of the device shown in FIG. The value Cr of the capacitor 132 is selected such that the inductance 134 and the capacitor 132 in the power transmission state resonate in parallel at a frequency higher than the frequency of the current applied to the power transmission coil (not shown). By this selection, the inductance 134 and the capacitor 132 constitute an oscillation source having the resonance frequency fR, and the resonance energy also flows to the load side, so that the power transmission efficiency is improved as a whole.
【００１６】１３６、１３７はインダクタンスであり、
漏れインダクタンスＬX の半分の値を持つ。１４０は整
流用のダイオード、１４２は平滑用のコンデンサであ
る。共振周波数ｆR が発振回路１３０の発振周波数ｆ0
の１．５倍程度に小さい場合には、直流電圧ＶDCは入力
の交流電圧Ｖinの変動の影響を受け易くなるが共振周波
数ｆR が１．５倍以上、特に２ｆ0 程度となるようなコ
ンデンサ１３２の容量を選択した場合には、平滑化回路
１２６からの交流電圧変動に対して安定な３ＶＡ程度の
電力が得られるというものである。従って、送電用磁気
結合素子に容量性素子を並列に接続することにより共振
が生じ、これにより当該送電用磁気結合素子の蓄積エネ
ルギーも送電に寄与し、当該容量性素子が存在しない場
合に較べて効率よく電力を受信側に送ることができると
いうものである。136 and 137 are inductances,
It has half the value of the leakage inductance LX. 140 is a rectifying diode, and 142 is a smoothing capacitor. The resonance frequency fR is equal to the oscillation frequency f0 of the oscillation circuit 130.
When the DC voltage VDC is smaller than about 1.5 times, the DC voltage VDC is easily affected by the fluctuation of the input AC voltage Vin, but the capacitor 132 has a resonance frequency fR of 1.5 times or more, especially about 2f0. When the capacity is selected, power of about 3 VA, which is stable against the AC voltage fluctuation from the smoothing circuit 126, can be obtained. Therefore, resonance occurs when the capacitive element is connected in parallel to the magnetic coupling element for power transmission, whereby the stored energy of the magnetic coupling element for power transmission also contributes to the power transmission, as compared with the case where the capacitive element does not exist. Power can be efficiently transmitted to the receiving side.
【００１７】また、非接触ＩＣカードの中には、例え
ば、特開平７−２３９９２２号公報に示されているもの
のように、接触式と非接触式伝送方法の双方が可能であ
り、さらには、カード表面に磁気ストライプやエンボス
等の形成を可能とし、多目的用途に対応可能としたＩＣ
カードもある。このＩＣカードは、ＩＣチップと、該Ｉ
Ｃチップと電気的に接続された外部機器との間で、情報
および／またはエネルギーの伝達を行う接触型伝達機構
と、コイルまたはアンテナからなる非接触型伝達機構と
を共通の支持体からなるＩＣモジュールとし、該ＩＣモ
ジュールを、これと嵌合するＩＣカード基体に嵌合させ
ることにより、接触型と非接触型の両方の方式に対応可
能とし、かつ、カードの表面に磁気ストライプやエンボ
スを形成したものである。[0017] Some non-contact IC cards include both a contact type and a non-contact type transmission method as disclosed in Japanese Patent Laid-Open No. 7-239922. An IC that enables the formation of magnetic stripes, embosses, etc. on the card surface and that can be used for multiple purposes.
There are also cards. This IC card includes an IC chip and the I
An IC comprising a common support including a contact-type transmission mechanism for transmitting information and / or energy between a C chip and an external device electrically connected thereto, and a non-contact-type transmission mechanism including a coil or an antenna. By making the module into a module, the IC module is fitted to an IC card substrate to be fitted with the module, so that both the contact type and the non-contact type can be supported, and a magnetic stripe or emboss is formed on the surface of the card. It was done.
【００１８】[0018]
【発明が解決しようとする課題】しかし、上述した第
１，第２の従来例における電力伝達効率の改善方式は、
送電電力にのみ着目されており、送電側の電力効率を改
善し、より多くの電力を送出する効果においてのみ有効
である。これらの方式では輻射電磁界の強度に制限が設
けられている場合、受信側の受電効率の改善には寄与し
ていない。微弱な電磁界中に位置した非接触ＩＣカード
の受電電力を改善するためには、カード内に輻射された
エネルギーをより多く吸収する手段が設けられなければ
ならない。However, the above-described first and second prior art examples of improving the power transmission efficiency are as follows.
Attention is paid only to the transmission power, and it is effective only in the effect of improving the power efficiency on the transmission side and transmitting more power. In these systems, when the intensity of the radiated electromagnetic field is limited, it does not contribute to improvement of the power receiving efficiency on the receiving side. In order to improve the received power of a non-contact IC card located in a weak electromagnetic field, a means for absorbing more of the radiated energy in the card must be provided.
【００１９】更に、ＩＣカードは半導体集積回路を内蔵
するため、低電力でより多くの電流を得ることが電源回
路の負荷を軽減する。つまり、電力受信側を低インピー
ダンスとすることが望ましい。しかしながら、従来例で
は、送信電圧のみに着目しており電力受信側に関して何
ら言及していない。Further, since the IC card has a built-in semiconductor integrated circuit, obtaining more current with low power reduces the load on the power supply circuit. That is, it is desirable that the power receiving side has low impedance. However, in the conventional example, attention is paid only to the transmission voltage, and nothing is mentioned about the power receiving side.
【００２０】そこで本発明は、このような問題を解決
し、外部から非接触で電力の供給を受ける非接触ＩＣカ
ードにおいて、電力送信側（リーダ・ライタ側）のコイ
ルと電力受信側（非接触ＩＣカード側）のコイルが空気
間隙によって隔てられている結合器において、電力受信
側の電力効率を改善しインピーダンス変換を行う非接触
ＩＣカードを提供することを目的としている。Therefore, the present invention solves such a problem and, in a non-contact IC card which receives power supply from outside in a non-contact manner, a coil on a power transmission side (a reader / writer side) and a coil on a power reception side (a non-contact side). An object of the present invention is to provide a non-contact IC card that improves power efficiency on the power receiving side and performs impedance conversion in a coupler in which coils on the IC card side are separated by an air gap.
【００２１】また、本発明は、前述したような、接触型
伝達機構と非接触型伝達機構と合わせ持ち、さらにはカ
ードの表面に磁気ストライプやエンボスを形成したＩＣ
カードにおいても、磁気ストライプやエンボス形成を損
なわずに、電力受信側の電力効率を改善しインピーダン
ス変換を行い、かつ、カードの厚さを薄く形成すること
ができる非接触ＩＣカードを提供することを目的として
いる。According to the present invention, there is provided an IC having a contact type transmission mechanism and a non-contact type transmission mechanism as described above, and further comprising a magnetic stripe or emboss formed on the surface of the card.
It is also an object of the present invention to provide a non-contact IC card capable of improving the power efficiency on the power receiving side, performing impedance conversion, and reducing the thickness of the card without impairing the formation of a magnetic stripe or emboss. The purpose is.
【００２２】[0022]
【課題を解決するための手段】上記課題を解決するため
に、請求項１に記載の発明は、空間を伝搬する予め定め
られた周波数の交流磁界を検出し交流電圧を発生させる
結合手段と、受信した信号をデータに変換する信号変換
手段と、変換されたデータを格納し処理するためのマイ
クロプロッセサ手段と、マイクロプロセッサで生成した
データを変換し送信する送信手段からなる非接触ＩＣカ
ードにおいて、外部に設けられたドライブユニットから
の電磁波を伝送媒体として、その動作に必要な電力の受
信と情報の授受を実現する結合手段として第１コイルを
有すると共に、静電容量素子に並列接続され、ドライブ
ユニットからの電磁波のみで駆動され、かつ静電容量素
子とのインピーダンス値が前記電磁波の周波数に共振す
るように選択された第２コイルを有する受信回路を構成
したことを特徴とする。In order to solve the above-mentioned problems, the invention according to claim 1 comprises a coupling means for detecting an AC magnetic field of a predetermined frequency propagating in space and generating an AC voltage, In a non-contact IC card comprising signal conversion means for converting a received signal into data, microprocessor means for storing and processing the converted data, and transmission means for converting and transmitting data generated by the microprocessor. A first coil as coupling means for receiving power required for the operation and transmitting and receiving information by using an electromagnetic wave from a drive unit provided outside as a transmission medium, and connected in parallel to the capacitive element, Is driven only by the electromagnetic wave from, and is selected such that the impedance value with the capacitance element resonates at the frequency of the electromagnetic wave. Characterized in that to constitute a reception circuit having a second coil.
【００２３】また、請求項２に記載の発明は、請求項１
に記載の非接触ＩＣカードにおいて、電力受信のための
第１コイルの直流抵抗による損失を低減するためコイル
の抵抗値を０．０１Ωから０．５Ωの範囲になるように
第１コイルを形成したことを特徴とする。The invention described in claim 2 is the same as that in claim 1.
In the non-contact IC card described in 1 above, the first coil is formed so that the resistance value of the coil is in the range of 0.01Ω to 0.5Ω in order to reduce the loss due to the DC resistance of the first coil for power reception. It is characterized by the following.
【００２４】また、請求項３に記載の発明は、請求項１
に記載の非接触ＩＣカードにおいて、前記第２コイルに
並列接続された静電容量素子をカード基材である誘電体
膜を平行平板の２枚の導電薄膜で挟み込むことで非接触
ＩＣカードを薄くしたことを特徴とする。[0024] The invention described in claim 3 is the first invention.
In the non-contact IC card according to the above, the non-contact IC card is thinned by sandwiching a dielectric film as a card base material between two parallel conductive thin films of a capacitance element connected in parallel to the second coil. It is characterized by having done.
【００２５】また、請求項４に記載の発明は、請求項１
に記載の非接触ＩＣカードにおいて、前記第２コイル
を、前記非接触ＩＣカードの周縁に沿って設けたことを
特徴とする。また、請求項５に記載の発明は、請求項１
に記載の非接触ＩＣカードにおいて、第２コイルの一部
と第１コイルとが密結合するように、第２コイルの少な
くとも１巻を、第１コイルと同芯状に巻くように形成し
たことを特徴とする。The invention described in claim 4 is the first invention.
Wherein the second coil is provided along the periphery of the non-contact IC card. The invention described in claim 5 is the same as the claim 1.
Wherein at least one turn of the second coil is formed concentrically with the first coil so that a part of the second coil is tightly coupled to the first coil. It is characterized by.
【００２６】また、請求項６に記載の発明は、請求項１
に記載の非接触ＩＣカードにおいて、第１，第２コイル
がプリントコイルであることを特徴とする。また、請求
項７に記載の発明は、請求項６に記載の非接触ＩＣカー
ドにおいて、前記第１，第２コイルは、誘電体膜上に形
成されたプリントコイルであって、前記誘電体膜を２枚
の平行平板導体薄膜で挟み込むことで前記静電容量素子
を成し、該静電容量素子を前記プリントコイルと一体に
形成することを特徴とする。また、請求項８に記載の発
明は、請求項１に記載の非接触ＩＣカードにおいて、前
記第１，第２コイルが絶縁被膜を施された導線を複数回
巻いた巻線コイルで形成されることを特徴とする。The invention according to claim 6 is the first invention.
Wherein the first and second coils are printed coils. According to a seventh aspect of the present invention, in the non-contact IC card according to the sixth aspect, the first and second coils are printed coils formed on a dielectric film. Is sandwiched between two parallel flat conductor thin films to form the capacitance element, and the capacitance element is formed integrally with the print coil. According to an eighth aspect of the present invention, in the non-contact IC card according to the first aspect, the first and second coils are formed of a winding coil formed by winding a conductive wire having an insulating coating a plurality of times. It is characterized by the following.
【００２７】さらに、請求項９に記載の発明は、非接触
型伝達手段と共に接触型伝達手段をも有し、該非接触型
伝達手段および接触型伝達手段を介して授受されるデー
タを処理するＩＣモジュールを具備する非接触ＩＣカー
ドであって、該非接触ＩＣカードの本体が複数の材料層
からなる非接触ＩＣカードにおいて、前記ＩＣモジュー
ルには、その表面に前記接触型伝達手段が設置されると
共に、その周縁部にフランジが設けられ、前記複数の材
料層は、前記ＩＣモジュールを収容する収容部が設けら
れた少なくとも１つの材料層と、前記ＩＣモジュールに
設置された接触型伝達手段を前記非接触ＩＣカードの表
面に露出させるための開口部を有する少なくとも１つの
材料層とを有してなり、前記開口部の周縁部によって、
前記ＩＣモジュールのフランジを、前記収容部を設けた
材料層に固定することを特徴とする。Further, according to the ninth aspect of the present invention, there is provided an IC having a non-contact type transmission means and a contact type transmission means for processing data transmitted and received through the non-contact type transmission means and the contact type transmission means. A non-contact IC card including a module, wherein the main body of the non-contact IC card is composed of a plurality of material layers, wherein the IC module is provided with the contact-type transmission means on a surface thereof. A flange is provided on a peripheral portion thereof, and the plurality of material layers include at least one material layer provided with an accommodating portion for accommodating the IC module, and a contact-type transmitting means provided on the IC module. At least one material layer having an opening to be exposed on the surface of the contact IC card, and a peripheral edge of the opening,
The flange of the IC module is fixed to a material layer provided with the housing.
【００２８】[0028]
【発明の実施の形態】高周波電力の送信とカードからの
情報の受信を行うドライブユニットの送信コイルの一端
には直列に静電容量素子であるコンデンサが接続されて
おり、直列共振回路を形成している。このドライブユニ
ットの送受信コイルの他端は電圧源に接続されている。
受信側である非接触ＩＣカードには負荷となる受信した
高周波信号の受信・整流を行う電源回路と高周波信号に
重畳された変調信号を受信及び送信する送・受信回路と
が接続された第１コイルがカードの基材面上に幅の広い
導体パターンとしてループ状に形成されている。幅の広
い導体パターンとしたことでコイルの等価抵抗が低減さ
れて、前記コイルは、より多くの電流を流し得るように
なり受信電力が改善される。DESCRIPTION OF THE PREFERRED EMBODIMENTS A capacitor, which is a capacitance element, is connected in series to one end of a transmission coil of a drive unit for transmitting high-frequency power and receiving information from a card to form a series resonance circuit. I have. The other end of the transmission / reception coil of this drive unit is connected to a voltage source.
A power supply circuit for receiving and rectifying a received high-frequency signal serving as a load and a transmitting / receiving circuit for receiving and transmitting a modulated signal superimposed on the high-frequency signal are connected to the contactless IC card on the receiving side. The coil is formed in a loop shape as a wide conductor pattern on the substrate surface of the card. Since the conductor pattern has a large width, the equivalent resistance of the coil is reduced, so that the coil can flow more current and the received power is improved.
【００２９】第１コイルと同一平面または、隣接平面内
に第２コイルであるスパイラルコイルが前記第１コイル
と同じ中心をもって形成される。この第２コイルを静電
容量素子であるコンデンサと並列に接続することによっ
て共振回路を構成することにより、受信インピーダンス
特性が改善される。この共振回路は、前記のドライブユ
ニットの送受信コイルにより発生された高周波電磁界
を、受信のための第１コイルと協調し磁気エネルギーと
して吸収する。よって、送信電力が一定の場合、前記第
２コイルによる並列共振回路をカードに設けない場合に
比較して、より安定して電力を受信できる。A spiral coil as a second coil is formed on the same plane as the first coil or on an adjacent plane with the same center as the first coil. By forming a resonance circuit by connecting the second coil in parallel with a capacitor serving as a capacitance element, the reception impedance characteristic is improved. This resonance circuit cooperates with the first coil for reception to absorb a high-frequency electromagnetic field generated by the transmission / reception coil of the drive unit as magnetic energy. Therefore, when the transmission power is constant, the power can be received more stably than when the card does not include the parallel resonance circuit including the second coil.
【００３０】更に、上記の構成とする事で受信端のイン
ピーダンスが低減され、低い電圧で、より多くの電流が
取り出されるという利点がある。このことは、マイクロ
プロセッサなどの駆動にとって好都合である。また、カ
ードを基材に金属導体薄膜を貼りつけた印刷配線板とし
て、カード内の並列共振回路のコンデンサを基材の誘電
体とした平面コンデンサとし、受信用第１コイルと、ス
パイラル状の第２コイルを前記金属導電薄膜で形成する
ことで、カードを薄くすることができるという利点があ
る。Further, by adopting the above configuration, there is an advantage that the impedance at the receiving end is reduced, and more current is taken out at a low voltage. This is advantageous for driving a microprocessor or the like. Further, a printed wiring board in which a metal conductor thin film is adhered to a base material of a card, a capacitor of a parallel resonance circuit in the card is a planar capacitor having a dielectric material of a base material, a first coil for reception, and a spiral shaped first coil. By forming the two coils with the metal conductive thin film, there is an advantage that the card can be made thin.
【００３１】また、ＩＣチップと接触型伝達機構と非接
触型伝達機構とを合わせ持ち、接触型伝達機構はＩＣチ
ップの入出力端子に直接接続された金属等の導電性素子
からなり、ドライブユニットの端子と電気的に接続され
て電力受給及び信号の授受を行い、非接触型伝達機構は
ＩＣチップの入出力端子に接続されたアンテナコイルを
伝達素子として空中に輻射された電磁エネルギーを吸収
して非接触に電力の供給と信号の授受を行うように構成
された非接触ＩＣカードにおいては、アンテナコイル
が、電力受給及び信号の授受を目的とした第１コイル
と、この第１コイルとは電気的に絶縁されたＬＣ共振回
路とを具備する。Further, the IC chip, the contact type transmission mechanism and the non-contact type transmission mechanism are combined, and the contact type transmission mechanism is made of a conductive element such as a metal directly connected to the input / output terminal of the IC chip. It is electrically connected to the terminals to receive power and send and receive signals, and the non-contact transmission mechanism absorbs electromagnetic energy radiated into the air using the antenna coil connected to the input / output terminal of the IC chip as a transmission element. In a non-contact IC card configured to perform non-contact power supply and signal transmission / reception, the antenna coil includes a first coil for power reception and signal transmission / reception, and the first coil is electrically connected to the first coil. And an electrically insulated LC resonance circuit.
【００３２】また、ＩＣチップ、接触型伝達機構、およ
び、第１コイルは、モジュール基板に実装されてＩＣモ
ジュール化されており、上記接触型伝達横構は、モジュ
ール基板のＩＣチップ実装面側に取り付けられ、第１コ
イルは、モジュール基板のＩＣチップ実装面とは反対の
表面にスパイラル状に形成されている。さらに、ＬＣ共
振回路は、第２コイルと平行平板コンデンサで構成され
ており、この第２コイルは、スパイラル形状であり、第
１コイルと同一平面、または、隣接平面内に非接触ＩＣ
カードの外周部に沿って形成される。また、この第２コ
イルの両端は、非接触ＩＣカード内に形成された平行平
板コンデンサと並列に接続されており、これにより共振
回路を構成している。The IC chip, the contact-type transmission mechanism, and the first coil are mounted on a module substrate to form an IC module, and the contact-type transmission horizontal structure is provided on the IC chip mounting surface side of the module substrate. The first coil is attached, and is formed in a spiral shape on the surface of the module substrate opposite to the IC chip mounting surface. Further, the LC resonance circuit is composed of a second coil and a parallel plate capacitor, and the second coil has a spiral shape and has a non-contact IC in the same plane as the first coil or in an adjacent plane.
It is formed along the outer periphery of the card. Both ends of the second coil are connected in parallel with a parallel plate capacitor formed in the non-contact IC card, thereby forming a resonance circuit.
【００３３】この共振回路は、ドライブユニットの送受
信コイルにより発生された高周波電磁界の周波数に鋭く
共振するように定数設定されており、この高周波電磁界
を受信するための第１コイルと協調して磁気エネルギー
として吸収する。よって、送信電力が一定の場合、上記
第２コイルによる並列共振回路をカードに設けない場合
に比較して、受信効率が向上し、より安定して電力を受
信することができる。The resonance circuit has a constant set so as to resonate sharply with the frequency of the high-frequency electromagnetic field generated by the transmission / reception coil of the drive unit. The resonance circuit cooperates with the first coil for receiving the high-frequency electromagnetic field. Absorbs as energy. Therefore, when the transmission power is constant, the reception efficiency is improved and the power can be received more stably than when the parallel resonance circuit including the second coil is not provided in the card.
【００３４】或いは、上記の構成に加えて、第２コイル
の少なくとも１巻を、第１コイルと近接して、かつ、第
１コイルと同じ中心をもって形成し、第２コイルの残り
のループはカード基体の外周に沿って形成する。こうす
ることで、第１コイルと、第２コイルの一部とを密結合
させることができるので、さらに伝達効率が向上する。Alternatively, in addition to the above configuration, at least one turn of the second coil is formed close to the first coil and at the same center as the first coil, and the remaining loop of the second coil is formed by a card. It is formed along the outer periphery of the base. By doing so, the first coil and a part of the second coil can be tightly coupled, so that the transmission efficiency is further improved.
【００３５】また、非接触ＩＣカードの基材に金属導体
薄膜を貼り付けた印刷配線板により、上記基材を誘電体
とする平面コンデンサを形成し、さらに、電力受信用の
第１コイルと、スパイラル状の第２コイルとを、上述し
た金属導体薄膜で形成することで、非接触ＩＣカードを
薄くすることができるという利点がある。加えて、第２
コイルの主たる部分をカードの外周部に沿って形成する
ことで、磁気ストライプやエンボスの形成領域を確保で
きる。Further, a printed circuit board in which a metal conductor thin film is adhered to a base material of a non-contact IC card is used to form a planar capacitor having the base material as a dielectric, and further a first coil for power reception, By forming the spiral second coil with the above-described metal conductor thin film, there is an advantage that the contactless IC card can be made thin. In addition, the second
By forming the main portion of the coil along the outer peripheral portion of the card, it is possible to secure a magnetic stripe or emboss formation area.
【００３６】[0036]
【実施例】以下、本発明の実施例を図面を用いて詳細に
説明する。図１には、本実施例における非接触ＩＣカー
ドとドライブユニットの磁気結合の概略が示されてい
る。図１において、１は非接触ＩＣカードであり、２は
この非接触ＩＣカード１への電力供給とデータの授受を
非接触式に行うドライブユニットである。Embodiments of the present invention will be described below in detail with reference to the drawings. FIG. 1 schematically shows the magnetic coupling between a non-contact IC card and a drive unit in this embodiment. In FIG. 1, reference numeral 1 denotes a contactless IC card, and reference numeral 2 denotes a drive unit for supplying power to the contactless IC card 1 and transmitting and receiving data in a contactless manner.
【００３７】ドライブユニット２には非接触ＩＣカード
１への電力供給と情報の授受を行う電磁結合器である送
受信コイル３が複数巻きのスパイラル状または、撚線状
に形成されている。送受信コイル３の端子は、ドライブ
ユニット２の送受信制御部４に接続されている。この送
受信コイル３は、印刷配線板の導体パターンとして円形
に形成したが、その形状に拘束されることなく楕円、又
は正方形、長方形、菱形等の矩形としても良い。更に、
その送受信コイル３を適切な太さの導線で形成しても良
い。The drive unit 2 is provided with a transmission / reception coil 3 which is an electromagnetic coupler for supplying power to the non-contact IC card 1 and transmitting / receiving information, and is formed in a spiral or stranded form with a plurality of turns. The terminal of the transmission / reception coil 3 is connected to the transmission / reception control unit 4 of the drive unit 2. Although the transmitting and receiving coil 3 is formed in a circular shape as the conductor pattern of the printed wiring board, the transmitting and receiving coil 3 may be formed into an elliptical shape or a rectangular shape such as a square, a rectangle, or a rhombus without being restricted by the shape. Furthermore,
The transmitting and receiving coil 3 may be formed of a conductive wire having an appropriate thickness.
【００３８】一方、非接触ＩＣカード１は電力受信と情
報の授受を行う第１コイル５が楕円形のループとして形
成されている。第１コイル５の端子は、カードの電子回
路部６に接続されている。第１コイル５の内側に第１コ
イル５と同じ中心を有した復数巻きの第２コイル７が楕
円のスパイラル状に形成された。本実施例では、第１コ
イル５と第２コイル７は、共にカードの基材上に３５μ
ｍの導体パターンで形成され、パターン幅はそれぞれ
１．５ｍｍ，０．３ｍｍとした。On the other hand, in the non-contact IC card 1, the first coil 5 for receiving power and transmitting and receiving information is formed as an elliptical loop. The terminal of the first coil 5 is connected to the electronic circuit section 6 of the card. On the inside of the first coil 5, a second coil 7 having multiple turns having the same center as the first coil 5 was formed in an elliptical spiral shape. In this embodiment, the first coil 5 and the second coil 7 are both 35 μm on the base material of the card.
m, and the pattern width was 1.5 mm and 0.3 mm, respectively.
【００３９】第２コイル７の端子は静電容量素子である
共振用コンデンサ８に並列接続されている。共振用コン
デンサ８は、カード基材を誘電体層として第１コイル５
と第２コイル７の形成と同様に導体パターンで平行平板
電極を形成して静電容量素子とした。The terminal of the second coil 7 is connected in parallel to a resonance capacitor 8 which is a capacitance element. The resonance capacitor 8 includes a first coil 5 having a card base as a dielectric layer.
As in the formation of the second coil 7, a parallel plate electrode was formed with a conductor pattern to obtain a capacitance element.
【００４０】ここで、第１コイル５と第２コイル７の形
状を楕円としたが、長方形のカード面を有効に使用する
ために第１コイル５と第２コイル７のコイル形状を長方
形としてもよい。また、第１コイル５と第２コイル７を
同一平面上に形成しても良いし、相異なる面例えば、共
振用コンデンサ８の２枚の電極を形成したそれぞれの面
に形成することもできる。図１では、第１コイル５を第
２コイル７より断面積を大きくしたが、電力吸収効率が
最も大きくなる関係であれば同寸法や第２コイル７を第
１コイル５よりも大きくしても良い。それぞれのコイル
の巻き数に関しても同様である。Here, the shapes of the first coil 5 and the second coil 7 are elliptical, but the coil shape of the first coil 5 and the second coil 7 may be rectangular in order to use the rectangular card surface effectively. Good. Further, the first coil 5 and the second coil 7 may be formed on the same plane, or may be formed on different surfaces, for example, on respective surfaces on which two electrodes of the resonance capacitor 8 are formed. In FIG. 1, the first coil 5 has a larger cross-sectional area than the second coil 7. However, as long as the power absorption efficiency is maximized, the same size and the second coil 7 may be larger than the first coil 5. good. The same applies to the number of turns of each coil.
【００４１】図２に、上述した非接触ＩＣカード２とド
ライブユニット１の構成ブロック図を示す。図２におい
て、１は非接触ＩＣカードであり、２はドライブユニッ
トである。そして、３０はドライブユニット２のインタ
ーフェース（Ｉ／Ｆ）２９を介してドライブユニット２
と情報の授受を行うホストコンピュータである。FIG. 2 is a block diagram showing the configuration of the non-contact IC card 2 and the drive unit 1 described above. In FIG. 2, 1 is a contactless IC card, and 2 is a drive unit. Reference numeral 30 denotes a drive unit 2 via an interface (I / F) 29 of the drive unit 2.
And a host computer that exchanges information.
【００４２】非接触ＩＣカード１の電子回路部６は、ド
ライブユニット２からの高周波信号を受信・整流する電
源回路１１、受信データの解読、送信データ演算等を行
う図示しない半導体メモリーを内蔵するデータ処理装置
（ＭＰＵ；Micro ProcessorUnit）１２、送受信データ
の変・復調回路１３、前記高周波信号に重畳された情報
を受信または変調データを送信する送受信回路１４から
なる。非接触ＩＣカード１の電源回路１１と送受信回路
１４は、第１コイル５の一端に接続される。The electronic circuit section 6 of the non-contact IC card 1 includes a power supply circuit 11 for receiving and rectifying a high-frequency signal from the drive unit 2 and a data processing incorporating a semiconductor memory (not shown) for decoding received data, calculating transmission data, and the like. It comprises a device (MPU; Micro Processor Unit) 12, a transmission / reception data modulation / demodulation circuit 13, and a transmission / reception circuit 14 for receiving information superimposed on the high-frequency signal or transmitting modulated data. The power supply circuit 11 and the transmission / reception circuit 14 of the non-contact IC card 1 are connected to one end of the first coil 5.
【００４３】ドライブユニット２の送受信制御部４は、
図示しない半導体メモリーを内蔵するデータ処理装置
（ＭＰＵ）２０、クロック生成回路である発振器２１、
高周波電力を増幅する交流増幅器２２、非接触ＩＣカー
ド１への送信データの変調と受信データの復調を行う変
・復調回路２３、非接触ＩＣカード１からの高周波信号
を受信する受信回路２４からなる。交流増幅器２２と受
信回路２４は、カップリングコンデンサ２５を介して送
受信コイル３に接続される。発振器２１は、例えば１〜
３０ＭＨｚ程度の搬送波信号を発生し、この搬送波信号
を第１コイル５が磁気エネルギーの形で受けて電力が伝
達される。なお、この搬送波信号の周波数はデータ伝送
周波数に比べ充分高いところに設定される。The transmission / reception controller 4 of the drive unit 2
A data processing device (MPU) 20 incorporating a semiconductor memory (not shown), an oscillator 21 as a clock generation circuit,
It comprises an AC amplifier 22 for amplifying high-frequency power, a modulation / demodulation circuit 23 for modulating transmission data to the contactless IC card 1 and demodulating received data, and a receiving circuit 24 for receiving a high-frequency signal from the contactless IC card 1. . The AC amplifier 22 and the receiving circuit 24 are connected to the transmitting and receiving coil 3 via the coupling capacitor 25. The oscillator 21 has, for example,
A carrier signal of about 30 MHz is generated, and the first coil 5 receives the carrier signal in the form of magnetic energy, and power is transmitted. Note that the frequency of the carrier signal is set to be sufficiently higher than the data transmission frequency.
【００４４】非接触ＩＣカードは、その電源となる電力
をこのドライブユニット２の発振器２１から交流増幅器
２２で変・復調回路２３からの変調された送信データを
重畳し、カップリングコンデンサ２５、送受信コイル３
を介してこれと非接触に結合されている非接触ＩＣカー
ドの送受信コイルである第１コイル５で受ける。第１コ
イル５は、ドライブユニット２の送受信コイル３と電磁
的に結合するための結合回路である。第１コイル５で受
信した電力は、電流回路１１で整流され直流電力として
非接触ＩＣカードに内蔵された各電子回路に供給され
る。The non-contact IC card superimposes the power serving as the power source on the transmission data modulated from the modulating / demodulating circuit 23 by the oscillator 21 of the drive unit 2 by the AC amplifier 22, the coupling capacitor 25, and the transmitting / receiving coil 3.
And is received by a first coil 5 which is a transmission / reception coil of a non-contact IC card which is connected to the non-contact IC card in a non-contact manner. The first coil 5 is a coupling circuit for electromagnetically coupling with the transmission / reception coil 3 of the drive unit 2. The power received by the first coil 5 is rectified by the current circuit 11 and supplied to each electronic circuit built in the non-contact IC card as DC power.
【００４５】以上のようにして、ドライブユニット２か
ら非接触ＩＣカード１に電力と情報の送信が達成され
る。ここで、非接触ＩＣカード１に内蔵された電子回路
は、電源電圧が２〜５Ｖで動作されるものであり、その
回路規模によっては多くの電流を消費するものであり、
１ｍＡから３０ｍＡ程度の駆動電流を必要とする。As described above, transmission of power and information from the drive unit 2 to the non-contact IC card 1 is achieved. Here, the electronic circuit built in the non-contact IC card 1 operates at a power supply voltage of 2 to 5 V, and consumes a large amount of current depending on the circuit scale.
A drive current of about 1 to 30 mA is required.
【００４６】しかしながら、従来のような負荷に直接接
続された第１コイル５の結合回路のみの構成では、高い
電圧で小電流の伝達であって、カードに内蔵された電源
回路でのインピーダンス変換が必要であった。その変換
回路による損失も駆動電力を増大させる原因の一つであ
った。However, in the conventional configuration including only the coupling circuit of the first coil 5 directly connected to the load, transmission of a small current at a high voltage is performed, and impedance conversion in a power supply circuit built in the card is performed. Was needed. The loss due to the conversion circuit was also one of the causes for increasing the driving power.
【００４７】そこで、本実施例においては、非接触ＩＣ
カード１に第１コイル５とは直流的に分離された第２コ
イル７に共振用コンデンサ８を並列接続した共振回路
（以下、共振タンク回路と称する）を設けた。ドライブ
ユニット２で発生された高周波信号は、カップリングコ
ンデンサ２５を介して送受信コイル３に伝達される。カ
ップリングコンデンンサ２５と送受信コイル３とは直列
共振回路を構成し、前記高周波電気信号は送受信コイル
３にて磁気エネルギーに変換され、交流磁場を形成する
ことで空間に伝播される。Therefore, in this embodiment, the non-contact IC
The card 1 was provided with a resonance circuit (hereinafter, referred to as a resonance tank circuit) in which a resonance capacitor 8 was connected in parallel to a second coil 7 which was DC-separated from the first coil 5. The high-frequency signal generated by the drive unit 2 is transmitted to the transmission / reception coil 3 via the coupling capacitor 25. The coupling capacitor 25 and the transmission / reception coil 3 constitute a series resonance circuit, and the high-frequency electric signal is converted into magnetic energy by the transmission / reception coil 3 and propagated into space by forming an AC magnetic field.
【００４８】ドライブユニット２の送受信コイル３と空
気間隙をもって配置された非接触ＩＣカード１の送受信
コイルである第１コイル５は、発生された交流磁場によ
り電流を流す。それと共に、共振用コンデンサ８と並列
接続されることで並列共振回路を構成する第２コイルに
も前記交流磁場によって電流が発生する。この共振タン
ク回路と第１コイル５の結合回路との協調によって、受
信特性が改善される。後に説明するように、本実施例の
共振タンク回路を有する回路では、共振タンク回路がな
い本発明の結合回路に比べて受信効率が距離１００ｍｍ
で約１０％改善される。従来の結合回路に対しては、６
０％の改善効果が得られる。The first coil 5, which is a transmission / reception coil of the non-contact IC card 1 arranged with an air gap from the transmission / reception coil 3 of the drive unit 2, allows current to flow by the generated alternating magnetic field. At the same time, a current is also generated by the AC magnetic field in the second coil that forms a parallel resonance circuit by being connected in parallel with the resonance capacitor 8. The reception characteristics are improved by cooperation between the resonance tank circuit and the coupling circuit of the first coil 5. As will be described later, the circuit having the resonance tank circuit of the present embodiment has a receiving efficiency of a distance of 100 mm compared to the coupling circuit of the present invention without the resonance tank circuit.
Is improved by about 10%. For a conventional coupling circuit, 6
An improvement effect of 0% is obtained.
【００４９】更に、最大受電電力を示す第１コイル５を
含む負荷側の受電インピーダンスの実行値は、共振タン
ク回路がない場合に比べ約１桁低下する。この結果、比
較的低電圧で大きな電流を、非接触ＩＣカードの電源回
路１１に取り込むことができる。Further, the effective value of the receiving impedance on the load side including the first coil 5 showing the maximum receiving power is reduced by about one digit compared to the case where there is no resonance tank circuit. As a result, a relatively low voltage and a large current can be taken into the power supply circuit 11 of the non-contact IC card.
【００５０】図３にカードに共振タンク回路を持たない
本実施例の低抵抗コイルによる結合回路と、共振タンク
回路を設けた本実施例に関わる結合回路と、共振タンク
回路を設けない従来の結合回路の受信レベルの特性を距
離１００ｍｍにおける受電電力の負荷インピーダンスの
関数として示した。図３において、丸の点で示した曲線
が共振タンク回路をもたせた場合の本実施例の受信回路
Ａの受電特性、三角の点で示した曲線が共振タンク回路
を持たない本実施例の結合回路Ｂの受電特性、四角の点
で示した曲線が共振タンク回路をもたない従来の結合回
路Ｃの受電特性である。 表１に、これらの結合回路の
特性値を示す。実験に際して、結合回路ＢとＣのコイル
には、結合回路として機能するように共振用コンデンサ
を並列接続させた。FIG. 3 shows a coupling circuit using a low-resistance coil according to the present embodiment having no resonant tank circuit in the card, a coupling circuit according to the present embodiment having the resonant tank circuit, and a conventional coupling having no resonant tank circuit. The characteristics of the receiving level of the circuit are shown as a function of the load impedance of the received power at a distance of 100 mm. In FIG. 3, a curve indicated by a circle indicates a power receiving characteristic of the receiving circuit A of the present embodiment when a resonance tank circuit is provided, and a curve indicated by a triangle indicates coupling in the present embodiment having no resonance tank circuit. The power receiving characteristic of the circuit B and the curve shown by the square point are the power receiving characteristics of the conventional coupling circuit C having no resonance tank circuit. Table 1 shows the characteristic values of these coupling circuits. In the experiment, a resonance capacitor was connected in parallel to the coils of the coupling circuits B and C so as to function as the coupling circuit.
【００５１】[0051]
【表１】 [Table 1]
【００５２】図３より明らかなように、従来の結合回路
Ｃに対して、直流抵抗が１／１０以下の結合回路Ｂの方
が、図示した全ての負荷インピーダンスの範囲において
受信電力の増大を示している。更に、共振タンク回路を
持たない結合回路Ｂ、及びＣでは、最大受信電力を与え
る負荷インピーダンスは約３．３ｋΩである。この時の
結合回路Ｂと結合回路Ｃの受電電力の比は、約２：１と
なり１００％以上の改善ができる。結合回路Ｂに共振タ
ンク回路を設けた結合回路Ａでは、受電電力のピーク
は、結合回路Ｂの３．３ｋΩ時の７５％になるが、ピー
クを示す負荷インピーダンスが共振回路を持たない結合
回路Ｂ，Ｃの１／１０の３３０Ω近傍となる。この負荷
インピーダンスでの結合回路Ａの受信電力は、結合回路
Ｂの同じインピーダンスでの受電電力の１２５％になっ
ている。更に、従来の結合回路Ｃの最大受信を示す３．
３ｋΩ負荷における数値の１６０％になっている。かよ
うにして、本実施例の共振回路を付加することでより低
いインピーダンスで最大受信効率を得ることができた。As is clear from FIG. 3, the coupling circuit B having a DC resistance of 1/10 or less of the conventional coupling circuit C shows an increase in the received power in all the illustrated load impedance ranges. ing. Further, in the coupling circuits B and C having no resonance tank circuit, the load impedance that gives the maximum received power is about 3.3 kΩ. At this time, the ratio of the received powers of the coupling circuits B and C is about 2: 1, which can be improved by 100% or more. In the coupling circuit A in which the resonance tank circuit is provided in the coupling circuit B, the peak of the received power is 75% of that of the coupling circuit B at 3.3 kΩ, but the coupling impedance of the coupling circuit B having no peak has a load impedance having no resonance circuit. , C, which is in the vicinity of 330Ω which is 1/10. The received power of the coupling circuit A at this load impedance is 125% of the received power of the coupling circuit B at the same impedance. In addition, it shows the maximum reception of the conventional coupling circuit C3.
This is 160% of the value at a load of 3 kΩ. Thus, by adding the resonance circuit of the present embodiment, it was possible to obtain the maximum receiving efficiency with lower impedance.
【００５３】図４に、図３と同じ結合回路での受信電流
を距離の関数として示した。図４を見ると、距離２５ｍ
ｍ近傍以上の図に示した距離範囲全般において、共振タ
ンク回路を有する３３０Ω負荷における受電電力が共振
タンク回路を有さない結合回路Ｂ、Ｃの３．３ｋΩ負荷
に対して、全体的に受電電流の改善が見られる。また、
共振タンク回路のない従来の結合回路Ｃの３．３ｋΩ負
荷では、ほぼ距離の２乗に反比例して受電電力が減少し
ているが、共振タンク回路のない本実施例の結合回路Ｂ
の３．３ｋΩ負荷では、その特性は、共振タンク回路の
ある結合回路Ａの３３０Ω負荷の場合と類似している。FIG. 4 shows the received current in the same coupling circuit as in FIG. 3 as a function of distance. Referring to FIG. 4, the distance is 25 m.
In the entire distance range shown in the figure near m or more, the received power in the 330Ω load having the resonance tank circuit is entirely equal to the 3.3 kΩ load of the coupling circuits B and C having no resonance tank circuit. Improvement is seen. Also,
With the 3.3 kΩ load of the conventional coupling circuit C without the resonance tank circuit, the received power decreases in inverse proportion to the square of the distance, but the coupling circuit B of the present embodiment without the resonance tank circuit.
With a 3.3 kΩ load, the characteristics are similar to those of the 330 Ω load of the coupling circuit A with the resonant tank circuit.
【００５４】共振タンク回路のある結合回路Ａの３３０
Ω負荷の場合には、距離５０ｍｍまで受電電力が増加
し、５０ｍｍ近傍で受電電力がピークとなり、それ以上
の距離では減少する特性を示す。一方、負荷３３０Ωに
おける共振タンク回路のない結合回路Ｂの受信電流特性
は、距離にほぼ反比例しており、距離７０ｍｍ以下で
は、共振タンク回路を有する場合よりも多くの電流を取
り得る。しかし、距離７０ｍｍを越える領域では、共振
タンク回路のある結合回路Ａの３３０Ω負荷の場合の方
が受信電流は、共振タンク回路がない場合に比べて１０
％程多くなる。結果として、送信コイルと受信コイルの
距離が、少なくとも２５ｍｍから１５０ｍｍほどの範囲
で安定した受電が可能となる。また、この受電電力のピ
ークを与える距離は、結合回路の定数によって調整可能
であって、用途に最適な受信特性を与え得る。330 of coupling circuit A with resonant tank circuit
In the case of an Ω load, the received power increases up to a distance of 50 mm, reaches a peak near 50 mm, and decreases at a distance longer than 50 mm. On the other hand, the reception current characteristic of the coupling circuit B having no resonant tank circuit at a load of 330Ω is almost inversely proportional to the distance. At a distance of 70 mm or less, more current can be taken than when the resonant tank circuit is provided. However, in the region exceeding the distance of 70 mm, the reception current of the coupling circuit A having the resonance tank circuit in the case of the 330Ω load is 10 times smaller than that in the case where the resonance tank circuit is not provided.
% Increase. As a result, stable power reception is possible when the distance between the transmission coil and the reception coil is at least in the range of about 25 mm to about 150 mm. Further, the distance at which the received power peaks can be adjusted by the constant of the coupling circuit, and can provide optimal reception characteristics for the application.
【００５５】以上、詳細に説明したように、本実施例の
コイルの抵抗値を減少させることと共振タンク回路を付
加した結合回路によって、従来の回路に比較して低電圧
で、より多くの電流を安定して受電できることが示され
た。As described in detail above, the reduction in the resistance value of the coil of this embodiment and the coupling circuit having the resonance tank circuit added thereto enable a lower voltage and a higher current than the conventional circuit. It was shown that power could be received stably.
【００５６】次に、上述した共振タンク回路と、幅の広
い導体パターンにより形成された第１コイルとを有する
非接触ＩＣカードの構成例について説明する。ここで、
以下に説明する各種構成の非接触ＩＣカードは、接触型
伝達機構と、非接触伝達機構とを合わせ持つと共に、カ
ード表面に磁気ストライプおよびエンボスが形成されて
いるものとする。Next, a configuration example of a non-contact IC card having the above-described resonance tank circuit and a first coil formed of a wide conductor pattern will be described. here,
A non-contact IC card having various configurations described below has both a contact-type transmission mechanism and a non-contact transmission mechanism, and has a magnetic stripe and an emboss formed on the card surface.
【００５７】〔第１構成例〕図５および図６は、第１構
成例における非接触ＩＣカードの構成を示す図であり、
図５（ａ）は非接触ＩＣカードの正面図、図５（ｂ）は
図５（ａ）に示す非接触ＩＣカードの結合回路を等価的
に示した図である。また、図６（ａ）は図５（ａ）内の
Ａ−Ａ部の断面拡大図、図６（ｂ）は図６（ａ）のＩＣ
モジュールを図６（ａ）中、下側から見た図である。[First Configuration Example] FIGS. 5 and 6 are views showing the configuration of a non-contact IC card in the first configuration example.
FIG. 5A is a front view of the non-contact IC card, and FIG. 5B is a diagram equivalently showing a coupling circuit of the non-contact IC card shown in FIG. 5A. 6A is an enlarged cross-sectional view taken along the line AA in FIG. 5A, and FIG. 6B is an IC of FIG. 6A.
It is the figure which looked at the module from the lower side in FIG.6 (a).
【００５８】これらの図において、１は非接触ＩＣカー
ド、７は第２コイル、８は共振用コンデンサ、４０はＩ
Ｃモジュール、５０は磁気ストライプ、５１はエンボス
パターンを施すエンボス領域である。また、図５（ｂ）
において、非接触ＩＣカード１内の５は第１コイル、１
５は第２コイル７と共振用コンデンサ８とが並列接続さ
れた共振回路である。また、２はこの非接触ＩＣカード
１への電力供給とデータの授受を非接触式に行うドライ
ブユニットであり、３は非接触ＩＣカードに非接触に電
力と情報を伝送し、非接触ＩＣカード１からの情報を受
信するための送受信コイルであり、４は非接触ドライブ
ユニット２から非接触ＩＣカード１への電力供給と情報
の授受の為の送受信制御部である。In these figures, 1 is a non-contact IC card, 7 is a second coil, 8 is a resonance capacitor, and 40 is
The C module, 50 is a magnetic stripe, and 51 is an emboss area on which an emboss pattern is applied. FIG. 5 (b)
, 5 in the non-contact IC card 1 is the first coil, 1
Reference numeral 5 denotes a resonance circuit in which the second coil 7 and the resonance capacitor 8 are connected in parallel. Reference numeral 2 denotes a drive unit for supplying power to the non-contact IC card 1 and transmitting and receiving data in a non-contact manner, and 3 transmits power and information to the non-contact IC card in a non-contact manner. And 4, a transmission / reception control unit for supplying power from the non-contact drive unit 2 to the non-contact IC card 1 and transmitting / receiving information.
【００５９】送受信コイル３の端子は、図５（ｂ）に示
すように、ドライブユニット２の送受信制御部４に接続
されており、非接触ＩＣカード１の第１コイル５の端子
は、ＩＣモジュール４０に接続されている。このＩＣモ
ジュール４０は、図６（ａ）に示すように、電源回路，
送受信回路，変復調回路，データ処理装置等の各種電子
回路が集積化されたＩＣチップ４１、ＩＣチップ４１が
実装されるモジュール基板４２、ＩＣチップ４１をモジ
ュール基板４２上に封入する封入体４３、封入体４３の
上面に設けられ、接触型伝達機構である接触型の端子電
極４４等からなっている。The terminal of the transmission / reception coil 3 is connected to the transmission / reception control unit 4 of the drive unit 2 as shown in FIG. 5B, and the terminal of the first coil 5 of the non-contact IC card 1 is connected to the IC module 40. It is connected to the. This IC module 40 includes a power supply circuit, as shown in FIG.
An IC chip 41 in which various electronic circuits such as a transmission / reception circuit, a modulation / demodulation circuit, and a data processing device are integrated, a module substrate 42 on which the IC chip 41 is mounted, an encapsulant 43 for encapsulating the IC chip 41 on the module substrate 42, and encapsulation. It is provided on the upper surface of the body 43 and includes a contact-type terminal electrode 44 as a contact-type transmission mechanism.
【００６０】ここで、封入体４３における端子電極４４
の設置面の面積は、モジュール基板４２のＩＣチップ実
装面の面積よりも小さくなっており、モジュール基板４
２の周縁部がフランジになっている。このＩＣモジュー
ル４０は、カード基体５５に設けられたＩＣモジュール
収納部５６に収納され、ＩＣモジュール収納部５６の開
口部よりも小さく、端子電極４４をカード表面に露出さ
せるための嵌合孔５７が設けられた保護シート５８で覆
われている。これにより、保護シート５８の嵌合孔５７
の周縁部によって、モジュール基板４２の周縁部（フラ
ンジ部）が押えられることになるので、ＩＣモジュール
４０がカード基体５５から脱落するのを防ぐことができ
る。Here, the terminal electrode 44 in the enclosure 43
Is smaller than the area of the IC chip mounting surface of the module substrate 42,
The peripheral edge of 2 is a flange. The IC module 40 is housed in an IC module housing 56 provided on a card base 55, is smaller than an opening of the IC module housing 56, and has a fitting hole 57 for exposing the terminal electrode 44 on the card surface. It is covered with the provided protection sheet 58. Thereby, the fitting hole 57 of the protection sheet 58 is formed.
The peripheral portion (flange portion) of the module substrate 42 is pressed by the peripheral portion, so that the IC module 40 can be prevented from falling off from the card base 55.
【００６１】第２コイル７と共振用コンデンサ８とが並
列接続された共振回路１５は、第１コイル５とは、電気
的に絶縁されている。第１コイル５は、図６（ａ），
（ｂ）に示すように、ＩＣモジュール４０のモジュール
基板４２の、ＩＣチップ４１の実装面とは反対の表面
に、スパイラル状に形成されている。The resonance circuit 15 in which the second coil 7 and the resonance capacitor 8 are connected in parallel is electrically insulated from the first coil 5. The first coil 5 is configured as shown in FIG.
As shown in (b), the module substrate 42 of the IC module 40 is formed in a spiral shape on the surface opposite to the mounting surface of the IC chip 41.
【００６２】図５（ａ）において、スパイラルコイルの
第２コイル７は、第１コイル５と同一平面または、隣接
平面内に非接触ＩＣカード１の外周部に沿って形成され
る。この第２コイル７は、非接触ＩＣカード１内に形成
された共振用コンデンサ８の図示しない金属電極にそれ
ぞれの面で両端が接続される。図５（ｂ）に示すよう
に、この第２コイル７を共振用コンデンサ８と並列に接
続することによって共振回路１５を構成する。In FIG. 5A, the second coil 7 of the spiral coil is formed along the outer periphery of the non-contact IC card 1 in the same plane as the first coil 5 or in an adjacent plane. Both ends of the second coil 7 are connected to metal electrodes (not shown) of a resonance capacitor 8 formed in the non-contact IC card 1 on each surface. As shown in FIG. 5B, a resonance circuit 15 is configured by connecting the second coil 7 in parallel with the resonance capacitor 8.
【００６３】この共振回路１５は、ドライブユニット２
の送受信コイル３により発生された高周波電磁界の周波
数に鋭く共振するように定数設定されており、受信のた
めの第１コイル５と協調して磁気エネルギーとして吸収
する。また、第２コイル７に共振用コンデンサ８を並列
に接続することにより共振が生じ、これにより当該第２
コイル７の蓄積エネルギーも第１コイル５に結合され受
電に寄与する。この時、第２コイル７は、非接触ＩＣカ
ード１の外周部に沿って大きな面積で設けられているの
で、受信する電磁エネルギー量が第１コイル５に比較し
て格段に大きい。このため、送信電力が一定の場合、第
２コイル７による共振回路１５を非接触ＩＣカード１に
設けない場合に比較して、より高い受電効率で電力を受
信できる。The resonance circuit 15 includes the drive unit 2
The constant is set so as to resonate sharply with the frequency of the high-frequency electromagnetic field generated by the transmitting / receiving coil 3 and absorbs as magnetic energy in cooperation with the first coil 5 for reception. Also, by connecting the resonance capacitor 8 to the second coil 7 in parallel, resonance occurs.
The energy stored in the coil 7 is also coupled to the first coil 5 and contributes to power reception. At this time, since the second coil 7 is provided with a large area along the outer peripheral portion of the non-contact IC card 1, the amount of electromagnetic energy to be received is much larger than that of the first coil 5. Therefore, when the transmission power is constant, power can be received with higher power receiving efficiency than when the resonance circuit 15 including the second coil 7 is not provided in the non-contact IC card 1.
【００６４】〔第２構成例〕図７および図８は、第２の
構成例における非接触ＩＣカードの構成を示すものであ
る。本構成例では、上述した共振回路および第２コイル
をユニット化すると共に、第１コイルと第２コイルとの
間に密結合部を設けたものである。なお、本構成例にお
いても、ＩＣカードの表面には、前述した図５（ａ）に
示すように、ＩＣモジュールの端子電極、磁気ストライ
プ、および、エンボス領域が設けられているものとする
（ただし、第２コイルおよび共振用コンデンサはＩＣカ
ードの表面には設けられない）。[Second Configuration Example] FIGS. 7 and 8 show the configuration of a non-contact IC card in the second configuration example. In this configuration example, the above-described resonance circuit and the second coil are unitized, and a tightly coupled portion is provided between the first coil and the second coil. In this configuration example as well, the terminal electrodes of the IC module, magnetic stripes, and embossed regions are provided on the surface of the IC card as shown in FIG. , The second coil and the resonance capacitor are not provided on the surface of the IC card).
【００６５】図７（ａ）は本構成例の共振ユニット（後
述する）の概略構成図、図７（ｂ）は図７（ａ）の共振
ユニットのＢ−Ｂ断面図、図８（ａ）は本構成例の非接
触ＩＣカードのＩＣモジュール近傍の拡大断面図であ
り、図８（ｂ）は図８（ａ）内のＩＣモジュール周囲の
第２コイルの第１コイルとの結合部を示している。FIG. 7A is a schematic configuration diagram of a resonance unit (to be described later) of this configuration example, FIG. 7B is a cross-sectional view taken along the line BB of the resonance unit of FIG. 7A, and FIG. FIG. 8B is an enlarged cross-sectional view of the vicinity of the IC module of the non-contact IC card of the present configuration example, and FIG. 8B shows a coupling portion of the second coil and the first coil around the IC module in FIG. ing.
【００６６】これらの図中、４１はＩＣチップ、４４は
接触型の端子電極、５５はカード基体、６０は誘電体層
６１に第２コイルと共振用コンデンサを形成した共振ユ
ニット、５８は保護シート、６３は共振ユニット６０に
設けられたＩＣモジュール嵌合孔、４２はＩＣモジュー
ルのモジュール基板である。また、第２コイル７は、非
接触ＩＣカード１と外形寸法が等しい共振ユニット６０
の外周に沿って設けられた第２ａコイル７ａとＩＣモジ
ュール２に近接して設けられた第２ｂコイル７ｂとに分
割して示した。１６ａ及び１６ｂは、共振用コンデンサ
８の２枚の平行平板の電極板である。In these figures, 41 is an IC chip, 44 is a contact-type terminal electrode, 55 is a card base, 60 is a resonance unit having a dielectric layer 61 formed with a second coil and a resonance capacitor, and 58 is a protective sheet. , 63 are IC module fitting holes provided in the resonance unit 60, and 42 is a module substrate of the IC module. Further, the second coil 7 includes a resonance unit 60 having the same outer dimensions as the non-contact IC card 1.
Are divided into a 2a coil 7a provided along the outer periphery and a 2b coil 7b provided near the IC module 2. 16 a and 16 b are two parallel flat electrode plates of the resonance capacitor 8.
【００６７】本構成例の共振ユニット６０は図７（ｂ）
に示すように、第２コイル７の１巻がＩＣモジュール嵌
合孔６３を取り巻くように第２ｂコイル７ｂを形成して
いる。第２ｂコイル７ｂを除く第２コイル７の主たる部
分は、非接触ＩＣカード１の外周に沿うように多数回巻
かれて第２ａコイル７ａを形成している。第２ａコイル
７ａと第２ｂコイル７ｂからなる第２コイル７は、共振
用コンデンサ８に並列接続されている。FIG. 7B shows a resonance unit 60 according to this configuration example.
As shown in the figure, the second coil 7b is formed so that one turn of the second coil 7 surrounds the IC module fitting hole 63. The main part of the second coil 7 except for the second b coil 7b is wound many times along the outer periphery of the non-contact IC card 1 to form the second coil 7a. The second coil 7 including the second a coil 7a and the second b coil 7b is connected in parallel to the resonance capacitor 8.
【００６８】そして共振用コンデンサ８は、第２コイル
７の形成と一体に導体パターンで平行平板電極を形成
し、高誘電率材料（例えば、ＰＥＴ，ポリミイド等）の
誘電体層６１を電極板１６ａ，電極板１６ｂで挟み込む
ことで静電容量をなした。この静電容量は、電極板１６
ａ，電極板１６ｂのレーザ等によるトリミングによっ
て、共振回路の共振周波数を精密に調整できる。また、
上述した第２コイル７および共振用コンデンサ８は誘電
体層６１の両面に貼り付けられた金属導体薄膜によって
形成されており、上記共振ユニット６０は、この誘電体
層６１と、この誘電体層６１の両面を覆う保護層６２に
よって構成されている。In the resonance capacitor 8, a parallel plate electrode is formed by a conductor pattern integrally with the formation of the second coil 7, and a dielectric layer 61 of a high dielectric constant material (for example, PET, polyimide, etc.) is formed on the electrode plate 16a. The capacitance was formed by being sandwiched between the electrode plates 16b. This capacitance depends on the electrode plate 16.
a, the resonance frequency of the resonance circuit can be precisely adjusted by trimming the electrode plate 16b with a laser or the like. Also,
The above-described second coil 7 and resonance capacitor 8 are formed of a metal conductor thin film adhered to both surfaces of a dielectric layer 61. The resonance unit 60 includes the dielectric layer 61 and the dielectric layer 61. Is formed by a protective layer 62 that covers both sides of the substrate.
【００６９】そして、本構成例の非接触ＩＣカード１
は、図８（ａ）のＩＣモジュール４０近傍の断面図に示
すように、カード基体５５の上に、ＩＣモジュール嵌合
孔６３を開けた上記共振ユニット６０が張り合わされ
る。ＩＣモジュール４０は、共振ユニット６０のＩＣモ
ジュール嵌合孔６３に位置合わせされてカード基体５５
に接着固定される。そして、ＩＣモジュール４０は、Ｉ
Ｃチップ４１を搭載したモジュール基板４２のＩＣチッ
プ４１搭載面に接触型の端子電極４４を設け、ＩＣチッ
プ４１の搭載面とは反対の面に非接触型の第１コイル５
をスパイラル状に形成した。Then, the non-contact IC card 1 of this configuration example
As shown in a cross-sectional view near the IC module 40 in FIG. 8A, the resonance unit 60 having an IC module fitting hole 63 is bonded on a card base 55. The IC module 40 is aligned with the IC module fitting hole 63 of the resonance unit 60 and
Adhesively fixed. Then, the IC module 40
A contact-type terminal electrode 44 is provided on the IC chip 41 mounting surface of the module substrate 42 on which the C chip 41 is mounted, and the non-contact type first coil 5 is provided on the surface opposite to the IC chip 41 mounting surface.
Was formed in a spiral shape.
【００７０】このＩＣチップ４１のモジュール基板４２
は、端子電極４４よりも僅かに大きく作られておりフラ
ンジ形状とした。次に、カード基体５５に共振ユニット
６０、ＩＣモジュール４０を実装した後、共振ユニット
６０に設けられたＩＣモジュール嵌合孔６３よりも小さ
くＩＣモジュール４０の端子電極４４が入る大きさの嵌
合孔５７が開けられた保護シート５８が接着される。こ
の結果、図８（ｂ）に示す如く、第１コイル５の周囲を
第２コイル７の１巻（第２ｂコイル７ｂ）が取り巻いて
密結合するように配置される。The module substrate 42 of the IC chip 41
Is slightly larger than the terminal electrode 44 and has a flange shape. Next, after mounting the resonance unit 60 and the IC module 40 on the card base 55, a fitting hole having a size smaller than the IC module fitting hole 63 provided in the resonance unit 60 and in which the terminal electrode 44 of the IC module 40 fits. The protection sheet 58 from which 57 has been opened is bonded. As a result, as shown in FIG. 8B, one turn of the second coil 7 (the second b coil 7b) surrounds the first coil 5 and is arranged so as to be tightly coupled.
【００７１】図９には、本構成例の非接触ＩＣカード１
と、ドライブユニット２の磁気結合の概略が示されてい
る。この図において、第１構成例と同様に、ドライブユ
ニット２には非接触ＩＣカード１への電力供給と情報の
授受を行う電磁結合器である送受信コイル３が形成され
ており、送受信コイル３の端子は、非接触ドライブユニ
ット２の送受信制御部４に接続されている。FIG. 9 shows a non-contact IC card 1 of this configuration example.
And a schematic diagram of magnetic coupling of the drive unit 2. In this figure, similarly to the first configuration example, the drive unit 2 is formed with a transmission / reception coil 3 which is an electromagnetic coupler for supplying power to the non-contact IC card 1 and transmitting / receiving information. Are connected to the transmission / reception control unit 4 of the non-contact drive unit 2.
【００７２】一方、非接触ＩＣカード１は、第２コイル
７と共振用コンデンサ８とが接続されて形成された共振
回路１５と電力受信と情報の授受を行う第１コイル５及
びＩＣモジュール４０からなり、第２コイル７は、図７
に示す共振ユニット６０の構成から、等価的にカードの
外周部に巻かれた第２ａコイル７ａと、ＩＣモジュール
４０に設けられた第１コイル５と密結合する第２ｂコイ
ル７ｂの２つに分割して示した。On the other hand, the non-contact IC card 1 includes the resonance circuit 15 formed by connecting the second coil 7 and the resonance capacitor 8 to the first coil 5 and the IC module 40 for receiving power and transmitting and receiving information. The second coil 7 is shown in FIG.
Is divided into two, equivalently, a second coil 7a wound around the outer peripheral portion of the card and a second coil 7b tightly coupled to the first coil 5 provided in the IC module 40. Shown.
【００７３】ここで、ドライブユニット２から非接触Ｉ
Ｃカード１に電力および情報を伝達する場合について、
各コイルの結合を以下に説明する。Here, the non-contact I
When transmitting power and information to the C card 1,
The coupling of each coil will be described below.
【００７４】ドライブユニット２の送受信制御部４によ
って発生された図示しない高周波信号により、送受信コ
イル３に高周波磁界が誘起される。この高周波信号は、
磁気エネルギーとして空間に放出される。この時、非接
触ＩＣカード１がこの高周波磁場中に置かれると、発生
された高周波磁場により非接触ＩＣカード１の共振用コ
ンデンサ８と並列接続されることで並列共振回路を構成
した第２ａコイル７ａと第２ｂコイル７ｂからなる第２
コイル７に上述した高周波磁場によって電流が発生す
る。それと共に、第１コイル５にも高周波電流を流す。A high-frequency magnetic field is induced in the transmission / reception coil 3 by a high-frequency signal (not shown) generated by the transmission / reception control unit 4 of the drive unit 2. This high frequency signal is
Released into space as magnetic energy. At this time, when the non-contact IC card 1 is placed in the high-frequency magnetic field, the second high-frequency coil is connected in parallel with the resonance capacitor 8 of the non-contact IC card 1 by the generated high-frequency magnetic field, thereby forming a parallel resonance circuit. 7a and a second b composed of a second b coil 7b
A current is generated in the coil 7 by the high-frequency magnetic field described above. At the same time, a high-frequency current is supplied to the first coil 5.
【００７５】しかしながら、第１コイル５と第２ｂコイ
ル７ｂに誘起される電流は、第２ａコイル７ａに誘起さ
れる電流に比べて小さく、本発明の非接触ＩＣカード１
の受信は第２ａコイル７ａがその主たる役割を果たす。
この第２ａコイル７ａと第２ｂコイル７ｂ及び共振用コ
ンデンサ８からなる共振回路１５によって受信された電
力および情報は、ＩＣモジュール４０に接続された第１
コイル５に非接触に伝達される。この時、ＩＣモジュー
ル４０の周囲に第２ｂコイル７ｂを設けたことで、第２
ｂコイル７ｂは第１コイル５と密結合となり、共振回路
１５の受信電力をより多く第１コイル５に伝達できる。However, the current induced in the first coil 5 and the second coil 7b is smaller than the current induced in the second coil 7a.
2a coil 7a plays its main role.
The power and information received by the resonance circuit 15 including the second a coil 7a, the second b coil 7b, and the resonance capacitor 8 are transmitted to the first module connected to the IC module 40.
It is transmitted to the coil 5 in a non-contact manner. At this time, since the second coil 7b is provided around the IC module 40, the second
The b coil 7b is tightly coupled to the first coil 5, and can transmit more received power of the resonance circuit 15 to the first coil 5.
【００７６】結果として、ドライブユニット２の送受信
コイル３と、非接触ＩＣカード１の第２コイル７の第２
ａコイル７ａによる結合により受電した電力が、第２コ
イル７の第２ｂコイル７ｂに伝達され、第２コイル７の
第２ｂコイル７ｂと第１コイル５との密結合によって、
換言すれば、トランス結合によって伝達される。そし
て、第２ａコイル７ａと第２ｂコイル７ｂとは伝達効率
が最大になるように回路定数が設定されている。このよ
うにして、共振回路１５と第１コイル５の結合回路との
協調によって、受信特性の改善が為される。As a result, the transmission / reception coil 3 of the drive unit 2 and the second coil 7 of the non-contact IC card 1
The power received by the coupling by the a coil 7a is transmitted to the second b coil 7b of the second coil 7, and the second coil 7b of the second coil 7 and the first coil 5 are tightly coupled.
In other words, it is transmitted by a transformer coupling. The circuit constants of the second coil 7a and the second coil 7b are set so that the transmission efficiency is maximized. In this way, the coordination between the resonance circuit 15 and the coupling circuit of the first coil 5 improves the reception characteristics.
【００７７】以上のようにして、ドライブユニット２か
ら非接触ＩＣカード１に電力と情報の送信が達成され
る。ここで、非接触ＩＣカード１のＩＣモジュール４０
に内蔵された電子回路は、その電源電圧が２〜５Ｖで動
作され、その回路規模によっては多くの電流を消費する
ものであり、１ｍＡから３０ｍＡ程度の駆動電流を必要
とする。しかしながら、従来のような小さなＩＣモジュ
ール内にアンテナコイルを形成するだけでは十分な受信
電力が得られないばかりでなく、負荷回路であるＩＣモ
ジュール４０に接続された第１コイル５の結合回路のみ
の構成では、高い電圧で小電流の伝達であって、カード
に内蔵された電源回路でのインピーダンス変換が必要で
あった。その変換回路による損失も駆動電力を増大させ
る原因の１つであった。そこで、本構成例においては、
非接触ＩＣカード１に第１コイル５とは直流的に分離さ
れた第２コイル７に共振用コンデンサ８を並列接続した
共振回路１５を設けた。As described above, transmission of power and information from the drive unit 2 to the non-contact IC card 1 is achieved. Here, the IC module 40 of the non-contact IC card 1
The power supply voltage of the built-in electronic circuit is operated at a power supply voltage of 2 to 5 V, and consumes a large amount of current depending on the circuit scale, and requires a drive current of about 1 mA to 30 mA. However, simply forming an antenna coil in a small IC module as in the related art does not only obtain sufficient reception power, but also requires only the coupling circuit of the first coil 5 connected to the IC module 40 as a load circuit. In the configuration, transmission of a small current at a high voltage required impedance conversion in a power supply circuit built in the card. The loss due to the conversion circuit was also one of the causes for increasing the driving power. Therefore, in this configuration example,
The non-contact IC card 1 is provided with a resonance circuit 15 in which a resonance capacitor 8 is connected in parallel to a second coil 7 which is DC-separated from the first coil 5.
【００７８】〔第３構成例〕次に、図１０および図１１
を参照して、第３構成例について説明する。なお、本構
成例においても、ＩＣカードの表面には、前述した図５
（ａ）に示すように、ＩＣモジュールの端子電極、磁気
ストライプ、および、エンボス領域が設けられているも
のとする（ただし、第２コイルおよび共振用コンデンサ
はＩＣカードの表面には設けられない）。[Third Configuration Example] Next, FIGS. 10 and 11
The third configuration example will be described with reference to FIG. It should be noted that also in the present configuration example, the surface of the IC card shown in FIG.
As shown in (a), it is assumed that a terminal electrode, a magnetic stripe, and an embossed region of an IC module are provided (however, the second coil and the resonance capacitor are not provided on the surface of the IC card). .
【００７９】図１０は第３構成例の共振ユニットの概略
構成図、図１１（ａ）は、本実施例の非接触ＩＣカード
の外観図（図５（ａ）参照）におけるＡ−Ａ部の拡大断
面図であり、図１１（ｂ）は、ＩＣモジュール４０近傍
の第１コイル５と第２コイル７との結合部である第２ｂ
コイル７ｂを示している。第３構成例において、第２コ
イル７の第１コイル５との結合部である第２ｂコイル７
ｂ以外は既に上述した第２構成例と同様である。FIG. 10 is a schematic configuration diagram of the resonance unit of the third configuration example, and FIG. 11A is an external view of the non-contact IC card of this embodiment (see FIG. 5A) taken along the line AA. FIG. 11B is an enlarged cross-sectional view, and FIG. 11B shows a second portion b near the IC module 40, which is a coupling portion between the first coil 5 and the second coil 7.
The coil 7b is shown. In the third configuration example, the second b coil 7 which is a coupling portion of the second coil 7 with the first coil 5
Except for b, it is the same as the second configuration example described above.
【００８０】図１０に示すように、本実施例ではＩＣモ
ジュール４０に設けられた第１コイル５との結合部であ
る第２ｂコイル７ｂを、図に示す第１コイル５と同様の
形状寸法の複数回巻きのスパイラルコイルとした。図１
１（ａ）に、非接触ＩＣカード１のＩＣモジュール４０
近傍の概略構成とＩＣモジュール４０に設けられた第１
コイル５と共振ユニット６０内の第２ｂコイル７ｂの結
合状態とを示す。As shown in FIG. 10, in the present embodiment, the second coil 7b, which is a coupling portion with the first coil 5 provided on the IC module 40, is replaced with a second coil 7b having the same shape and dimensions as the first coil 5 shown in FIG. A spiral coil with multiple turns was used. FIG.
1 (a), the IC module 40 of the non-contact IC card 1
The schematic configuration of the vicinity and the first
4 shows a coupling state of the coil 5 and the second b coil 7b in the resonance unit 60.
【００８１】図１１（ａ）において、カード基体５５に
共振ユニット６０と、ＩＣモジュール嵌合孔６５をあけ
られた中間シート６６とが積層され、中間シート６６の
ＩＣモジュール嵌合孔６５にＩＣモジュール４０のモジ
ュール基板４２が嵌合されている。その上に、ＩＣモジ
ュール４０用の嵌合孔５７をあけられた保護シート５８
が積層されている。そして、図１１（ｂ）において、第
１コイル５は、同図中破線で示されるように、モジュー
ル基板４２のＩＣチップ４１の実装面と反対側の面に形
成され、モジュール基板４２にスルーホールＴ１，Ｔ２
を通してＩＣチップ４１と接続されている。In FIG. 11A, a resonance unit 60 and an intermediate sheet 66 having an IC module fitting hole 65 are laminated on a card base 55, and the IC module is inserted into the IC module fitting hole 65 of the intermediate sheet 66. Forty module boards 42 are fitted. A protective sheet 58 provided with a fitting hole 57 for the IC module 40 thereon.
Are laminated. 11B, the first coil 5 is formed on the surface of the module substrate 42 opposite to the surface on which the IC chip 41 is mounted, as indicated by the broken line in FIG. T1, T2
Through the IC chip 41.
【００８２】また、第２ｂコイル７ｂは、その一方端が
共振ユニット６０とカード基体５５との間（図１１
（ａ）参照）に形成され、共振ユニット６０に設けられ
たスルーホールＴ３を通して共振ユニット６０の誘電体
層６１の表面上に、図１１（ｂ）中、実線で示すように
形成される。なお、共振ユニット６０の誘電体層６１の
表面において、第２ｂコイル７ｂが形成される面は、表
裏面いずれでも構わない。これにより、第１コイル５と
第２ｂコイル７ｂとは、図１１（ａ），（ｂ）のように
カードの厚さ方向に密結合される。The second coil 7b has one end between the resonance unit 60 and the card base 55 (FIG. 11).
11 (a)), and is formed on the surface of the dielectric layer 61 of the resonance unit 60 through a through hole T3 provided in the resonance unit 60 as shown by a solid line in FIG. 11 (b). In addition, on the surface of the dielectric layer 61 of the resonance unit 60, the surface on which the second b coil 7b is formed may be either the front surface or the back surface. Thereby, the first coil 5 and the second b coil 7b are tightly coupled in the thickness direction of the card as shown in FIGS. 11 (a) and 11 (b).
【００８３】以上、詳細に説明したように、共振回路を
付加した結合回路を設けることによって、従来の回路に
比較して低電圧でより多くの電流を安定して受信でき
る。As described above in detail, by providing the coupling circuit to which the resonance circuit is added, it is possible to stably receive more current at a lower voltage than the conventional circuit.
【００８４】また、上述した第１乃至第３構成例では、
磁気結合素子である第１コイル５と第２コイル７とをプ
リントコイルとしたが、絶縁被膜付き導線を巻いたコイ
ルとしても良く、接着剤充填、インジェクション、座ぐ
りやシートへの圧着等の方法でカードに実装可能であ
る。また、上述した各構成例のようにＩＣモジュール４
０を、つば付き構造とすることでＩＣモジュール４０の
剥離による脱落が防止され、構造的に強固になる。In the first to third configuration examples described above,
The first coil 5 and the second coil 7, which are magnetic coupling elements, are printed coils, but may be coils wound with a conductive wire with an insulating coating, and may be filled with an adhesive, injected, counterbore or crimped to a sheet. Can be mounted on a card. Also, as in each of the above-described configuration examples, the IC module 4
By making 0 a flanged structure, it is possible to prevent the IC module 40 from falling off due to peeling, and to be structurally strong.
【００８５】しかし、上記の各構成例のＩＣモジュール
構造では、ＩＣカードの生産設備を新しく導入しなけれ
ばならないが、従来のＩＣカード製造設備を転用可能と
することも生産上重要な課題である。そこで、図１２
（ａ），（ｂ）に示すカード構成も有用である。ここ
で、図１２（ａ）は第４の構成例によるカード構成を、
図１２（ｂ）は第５の構成例によるカード構成を示す。
また、図示しないが、第２ｂコイル７ｂを持たない前述
した第１構成例も図１２の構成が適用可能である。However, in the IC module structure of each of the above configuration examples, it is necessary to newly introduce an IC card production facility. However, it is also an important production issue that the existing IC card production facility can be diverted. . Therefore, FIG.
The card configurations shown in (a) and (b) are also useful. Here, FIG. 12A shows a card configuration according to the fourth configuration example.
FIG. 12B shows a card configuration according to a fifth configuration example.
Although not shown, the configuration shown in FIG. 12 can be applied to the above-described first configuration example having no 2b coil 7b.
【００８６】図１２に示すＩＣモジュール４５は、従来
のＩＣカードのＩＣモジュール構成を踏襲しており、セ
ラミック等からなるモジュール基板４２の片面に接触型
の端子電極４４が設けられており、それとは反対側にＩ
Ｃチップ４１が実装され、端子電極４４とはスルーホー
ルを介してワイヤボンディングにより接続されている。
第４，第５構成例においては、第１コイル５が、ＩＣチ
ップ４１の実装面でＩＣチップ４１の周囲に設けられ
る。その後、ＩＣチップ４１の実装面が樹脂ポッティン
グされ、更に端子電極４４の面と平行平面を作るために
切削されてＩＣモジュール４５とした。以下、図１２に
示す第４，第５構成例におけるカード構成およびその製
作手順について説明する。The IC module 45 shown in FIG. 12 follows the IC module configuration of a conventional IC card, in which a contact-type terminal electrode 44 is provided on one side of a module substrate 42 made of ceramic or the like. I on the other side
The C chip 41 is mounted, and is connected to the terminal electrodes 44 by wire bonding via through holes.
In the fourth and fifth configuration examples, the first coil 5 is provided around the IC chip 41 on the mounting surface of the IC chip 41. Thereafter, the mounting surface of the IC chip 41 was potted with a resin, and further cut to form a plane parallel to the surface of the terminal electrode 44, thereby forming an IC module 45. Hereinafter, the card configuration and the manufacturing procedure in the fourth and fifth configuration examples shown in FIG. 12 will be described.
【００８７】〔第４構成例〕図１２（ａ）において、共
振ユニット６０の構成は、図７（ｂ）と同等である。ま
ず、共振ユニット６０が表裏２枚のカード基体５５ａ，
５５ｂによって挟み込まれ、熱圧着ラミネートされ、Ｉ
Ｃモジュール４５を実装するためのＩＣモジュール実装
部７０を加工する前段階のカード（以下、これを白カー
ドと呼ぶ）ができる。次に、この白カード上におけるＩ
Ｃモジュール４５の実装位置を機械加工によって厚さ方
向に座ぐることで、ＩＣモジュール実装部７０を所定の
深さに形成する。最後に、ＩＣモジュール４５をＩＣモ
ジュール実装部７０に接着することで非接触ＩＣカード
１が完成する。勿論、白カードの製造方法は、ラミネー
トの他、インジェクション等も実用できる。[Fourth Configuration Example] In FIG. 12A, the configuration of the resonance unit 60 is the same as that in FIG. 7B. First, the resonance unit 60 includes two card bases 55a,
55b, laminated by thermocompression bonding, and
A card in a stage before processing the IC module mounting section 70 for mounting the C module 45 (hereinafter, referred to as a white card) can be obtained. Next, the I on this white card
The mounting position of the C module 45 is seated in the thickness direction by machining to form the IC module mounting portion 70 at a predetermined depth. Finally, the non-contact IC card 1 is completed by bonding the IC module 45 to the IC module mounting section 70. Needless to say, the white card can be manufactured by injection or the like in addition to lamination.
【００８８】なお、上述した加工手順において、白カー
ドに形成するＩＣモジュール実装部７０の深さは、ＩＣ
モジュール４５の高さに応じて適宜決定されるものであ
る。したがって、図１２（ａ）における共振ユニット６
０には、図７（ｂ）のＩＣモジュール嵌合孔６３のよう
な、ＩＣモジュールを収容するための孔が設けられない
場合も有り得る。In the processing procedure described above, the depth of the IC module mounting portion 70 formed on the white card is
It is appropriately determined according to the height of the module 45. Therefore, the resonance unit 6 in FIG.
0 may not be provided with a hole for accommodating an IC module, such as the IC module fitting hole 63 in FIG. 7B.
【００８９】〔第５構成例〕図１２（ｂ）に示す第５構
成例においても、図１２（ａ）と同様にしてカード製作
される。共振ユニット６０は図１０と同等である。ま
ず、共振ユニット６０にカード基体５５をラミネート、
または、インジェクションにより固着させることで白カ
ードを製作する。次に、この白カード上におけるＩＣモ
ジュール４５の実装位置を、機械加工によって厚さ方向
に座ぐることでＩＣモジュール嵌合孔７１を所定の深さ
に形成する。なお、ラミネート方式の場合、ＩＣモジュ
ール嵌合孔７１は、カード基体５５において打ち抜き等
によって予め準備されていても良い。最後に、ＩＣモジ
ュール４５をＩＣモジュール嵌合孔７１に接着すること
で非接触ＩＣカード１が完成する。[Fifth Configuration Example] In the fifth configuration example shown in FIG. 12B, a card is manufactured in the same manner as in FIG. 12A. The resonance unit 60 is equivalent to FIG. First, the card base 55 is laminated on the resonance unit 60,
Alternatively, a white card is manufactured by being fixed by injection. Next, the mounting position of the IC module 45 on the white card is seated in the thickness direction by machining to form the IC module fitting hole 71 at a predetermined depth. In the case of the lamination method, the IC module fitting hole 71 may be prepared in advance in the card base 55 by punching or the like. Finally, the non-contact IC card 1 is completed by bonding the IC module 45 to the IC module fitting hole 71.
【００９０】[0090]
【発明の効果】以上の説明から理解できるように、カー
ドの基材面上に幅の広い導体パターンとしてループ状に
形成された第１コイルを、幅の広い導体パターンとした
ことでコイルの等価抵抗が低減されて、前記コイルはよ
り多くの電流を流し得るようになるため、受信電力が改
善される。As can be understood from the above description, the first coil formed in a loop shape as a wide conductor pattern on the base material surface of the card is made to be a wide conductor pattern, so that the equivalent coil is obtained. The received power is improved because the resistance is reduced and the coil can carry more current.
【００９１】また、非接触ＩＣカードに設けられた第１
コイルとは別個にスパイラル状の第２コイルを静電容量
素子であるコンデンサと並列に接続することによって共
振タンク回路を構成することで、電力の受信インピーダ
ンス特性が改善される。この共振タンク回路は、ドライ
ブユニットの送受信コイルにより発生された高周波電磁
界を第１コイルと協調して磁気エネルギーとして吸収し
電力の受信特性を改善する。よって、送信電力が一定の
場合、共振タンク回路をカードに設けない場合に比較し
て、より安定した電力を受信できるという効果がある。The first contactless IC card
By forming a resonance tank circuit by connecting a spiral second coil separately from the coil in parallel with a capacitor which is a capacitance element, the reception impedance characteristic of electric power is improved. This resonance tank circuit cooperates with the first coil to absorb a high-frequency electromagnetic field generated by the transmission / reception coil of the drive unit as magnetic energy, thereby improving power reception characteristics. Therefore, when the transmission power is constant, there is an effect that more stable power can be received as compared with the case where the resonance tank circuit is not provided on the card.
【００９２】また、上記の構成とすることで受信端のイ
ンピーダンスが低減され、低い電圧でより多くの電流が
取り出せるという利点がある。このことは、マイクロプ
ロセッサ等の駆動にとって好都合である。Further, by adopting the above configuration, there is an advantage that the impedance at the receiving end is reduced, and more current can be taken out at a low voltage. This is convenient for driving a microprocessor or the like.
【００９３】また、第１コイルの直流抵抗を小さくする
ために第１コイルの巻数を減らした場合、共振タンク回
路を持たない構成の時に第１コイルによる結合回路に挿
入される共振コンデンサは、共振タンク回路を持つ場合
に比較して容量が大きくなる。カードという限られた面
積の中にカード基材を誘電体とした容量の大きな平面コ
ンデンサを形成することは好ましくない。共振タンク回
路を付加することで、その回路がない場合に比べて、コ
ンデンサの容量は小さくできる。つまり、共振タンク回
路を設けることのもう１つの効果は、この共振コンデン
サの容量、換言すれば、コンデンサの面積を小さくでき
ることである。When the number of turns of the first coil is reduced in order to reduce the DC resistance of the first coil, the resonance capacitor inserted into the coupling circuit formed by the first coil when the configuration does not include the resonance tank circuit is used. The capacity is larger than when a tank circuit is provided. It is not preferable to form a large-capacity planar capacitor using a card base material as a dielectric in a limited area of a card. By adding the resonance tank circuit, the capacitance of the capacitor can be reduced as compared with the case where the circuit is not provided. In other words, another effect of providing the resonance tank circuit is that the capacitance of the resonance capacitor, in other words, the area of the capacitor can be reduced.
【００９４】さらに、上記の構成とする事で受信端のイ
ンピーダンスが低減され、低い電圧で、より多くの電流
を取り出せるという利点がある。このことは、マイクロ
プロセッサなどの駆動にとって好都合である。或いは、
上記の構成に加えて、第２コイルの少なくとも１巻が前
記第１コイルと同じ中心をもって形成し、第２コイルの
残りのループはカード基体の外周に沿って形成される。
こうすることで、第１コイルと第２コイルの一部が密結
合するようにできるので伝達効率が向上する。Further, by adopting the above configuration, there is an advantage that the impedance at the receiving end is reduced, and more current can be taken out with a low voltage. This is advantageous for driving a microprocessor or the like. Or,
In addition to the above arrangement, at least one turn of the second coil is formed with the same center as the first coil, and the remaining loop of the second coil is formed along the outer periphery of the card base.
By doing so, the first coil and a part of the second coil can be tightly coupled, so that the transmission efficiency is improved.
【００９５】このように、いわばトランス結合によっ
て、ＩＣモジュールに非接触に電力を伝達するので、大
型アンテナコイルとＩＣモジュールとを相互接続する必
要がなく信頼性が向上する。As described above, since the power is transmitted to the IC module in a non-contact manner by means of the transformer coupling, there is no need to interconnect the large antenna coil and the IC module, and the reliability is improved.
【００９６】また、カード基材に金属導体薄膜を貼りつ
けた印刷配線板として、カード内の並列共振回路のコン
デンサを、上記基材の誘電体とした平面コンデンサと
し、受信用第１コイルと、スパイラル状の第２コイルを
前記金属導体薄膜で形成することで、カードを薄くする
ことができるという利点がある。加えて、第２コイルの
主たる部分をカードの外周部に沿って形成したことで、
磁気ストライプやエンボスの形成領域を確保できる。Further, as a printed wiring board in which a metal conductor thin film is adhered to a card base material, the capacitor of the parallel resonance circuit in the card is a planar capacitor which is a dielectric material of the base material, and a first receiving coil is provided. There is an advantage that the card can be made thinner by forming the spiral second coil with the metal conductor thin film. In addition, by forming the main portion of the second coil along the outer peripheral portion of the card,
The formation area of the magnetic stripe and the emboss can be secured.
【図１】 本発明の実施例のカードとドライブユニット
の磁気結合の概略を示す構成図である。FIG. 1 is a configuration diagram schematically illustrating magnetic coupling between a card and a drive unit according to an embodiment of the present invention.
【図２】 本発明の実施例を示す非接触ＩＣカードとド
ライブユニットの構成ブロック図である。FIG. 2 is a configuration block diagram of a non-contact IC card and a drive unit according to an embodiment of the present invention.
【図３】 従来例との比較による本発明の回路による受
信電力の特性図である。FIG. 3 is a characteristic diagram of received power by a circuit of the present invention in comparison with a conventional example.
【図４】 従来例との比較による本発明の回路による受
信電流の距離依存を示す図である。FIG. 4 is a diagram illustrating a distance dependency of a reception current by the circuit of the present invention in comparison with a conventional example.
【図５】 本発明の非接触ＩＣカードの第１構成例を示
す図であり、（ａ）は正面図、（ｂ）は（ａ）に示す非
接触ＩＣカードの結合回路を等価的に示した図である。5A and 5B are diagrams showing a first configuration example of the non-contact IC card of the present invention, wherein FIG. 5A is a front view, and FIG. 5B is equivalently showing a coupling circuit of the non-contact IC card shown in FIG. FIG.
【図６】 同第１構成例を示す図であり、（ａ）は図５
（ａ）内のＡ−Ａ部の断面拡大図、図６（ｂ）は図６
（ａ）のＩＣモジュールを、下側から見た図である。FIG. 6 is a diagram showing the first configuration example, and FIG.
FIG. 6B is an enlarged cross-sectional view of an AA portion in FIG.
It is the figure which looked at the IC module of (a) from the lower side.
【図７】 本発明の非接触ＩＣカードの第２構成例にお
ける共振ユニットの構成を示す図であり、（ａ）は正面
図、（ｂ）は（ａ）内のＢ−Ｂ断面図である。7A and 7B are diagrams showing a configuration of a resonance unit in a second configuration example of the non-contact IC card of the present invention, wherein FIG. 7A is a front view, and FIG. 7B is a cross-sectional view taken along line BB in FIG. .
【図８】 本発明の非接触ＩＣカードの第２構成例を示
す図であり、（ａ）はＩＣモジュール近傍の拡大断面
図、（ｂ）は（ａ）内のＩＣモジュール周囲の第２コイ
ルの第１コイルとの結合部を示す図である。8A and 8B are diagrams showing a second configuration example of the non-contact IC card of the present invention, wherein FIG. 8A is an enlarged cross-sectional view near the IC module, and FIG. 8B is a second coil around the IC module in FIG. FIG. 4 is a diagram showing a coupling portion with the first coil of FIG.
【図９】 同第２構成例における非接触結合方式の等価
回路を示す図である。FIG. 9 is a diagram showing an equivalent circuit of a non-contact coupling system in the second configuration example.
【図１０】 本発明の非接触ＩＣカードの第３構成例に
おける共振ユニットの構成を示す正面図である。FIG. 10 is a front view showing a configuration of a resonance unit in a third configuration example of the non-contact IC card of the present invention.
【図１１】 本発明の非接触ＩＣカードの第３構成例を
示す図であり、（ａ）はＩＣモジュール近傍の拡大断面
図、（ｂ）は（ａ）内のＩＣモジュール周囲の第２コイ
ルの第１コイルとの結合部を示す図である。11A and 11B are diagrams showing a third configuration example of the non-contact IC card of the present invention, wherein FIG. 11A is an enlarged sectional view near the IC module, and FIG. 11B is a second coil around the IC module in FIG. FIG. 4 is a diagram showing a coupling portion with the first coil of FIG.
【図１２】 本発明の非接触ＩＣカードの第４，第５構
成例を示す図であり、（ａ）は第４構成例における非接
触ＩＣカードのＩＣモジュール近傍の拡大断面図、
（ｂ）は第５構成例における非接触ＩＣカードのＩＣモ
ジュール近傍の拡大断面図である。FIGS. 12A and 12B are diagrams showing fourth and fifth configuration examples of the non-contact IC card of the present invention, wherein FIG. 12A is an enlarged cross-sectional view near the IC module of the non-contact IC card in the fourth configuration example;
(B) is an enlarged sectional view near the IC module of the contactless IC card in the fifth configuration example.
【図１３】 第１の従来例の電力伝達の模式図である。FIG. 13 is a schematic diagram of power transmission of a first conventional example.
【図１４】 第２の従来例の電力伝達装置の給電に関わ
る等価回路図である。FIG. 14 is an equivalent circuit diagram relating to power supply of a power transmission device of a second conventional example.
１…非接触ＩＣカード ２…ドライブユニット
３…送受信コイル ４…送受信制御部 ５…第１コイル
６…電子回路部 ７…第２コイル ７ａ…第２ａコイル
７ｂ…第２ｂコイル ８…共振用コンデンサ １１…電源回路 １２，
２０…データ処理装置 １３，２３…変・復調回路 １４…送・受信回路
１５…共振回路 １６ａ，１６ｂ…電極板 ２４…受信回路 ２５…カップリングコンデンサ ２９…インター
フェース ３０…ホストコンピュータ ４０，４５……ＩＣモジ
ュール ４１…ＩＣチップ ４２…モジュール基板
４３…封入体 ４４…端子電極 ４６…樹脂 ５０…磁気ストライプ ５１…エンボス領域 ５５，５５ａ，５５ｂ…カード基体 ５６…ＩＣモ
ジュール収容部 ５７…嵌合孔 ５８…保護シート ６０…
共振ユニット ６１…誘電体層 ６２…保護層 ６３，６５，７１…ＩＣモジュール嵌合孔 ６６…中間シート ７０…ＩＣモジュール実装部 １００，２００…ＦＥＴ １０１，１０２…
磁性体コア Ｃ１，Ｃ２，Ｃ３…コンデンサ Ｌ１，Ｌ２，Ｌ３
…コイル Ｒ１，Ｒ２，Ｒ３…抵抗 ＲL …負荷インピ
ーダンス Ｖｃ…クロック信号 １１２…周波数変換回路 １２６…平滑回路 １２
８…電気回路 １３０…発振回路 １３１…交流回路 １３
２…共振用コンデンサ １３４，１３６，１３７…インダクタンス １４０…整流用ダイオード １４２…平滑用コンデン
サ Ｖac…交流出力電圧 ＶDC…直流電圧 Ｖin…１次
側電圧 Ｖout …２次側電圧 Ｌx …漏れインダクタンス Ｉ
L …負荷電流1. Non-contact IC card 2. Drive unit
3 ... Transceiver coil 4 ... Transceiver controller 5 ... First coil
6 electronic circuit section 7 second coil 7a 2a coil
7b 2nd coil 8 ... Resonant capacitor 11 ... Power supply circuit 12,
20 data processing device 13, 23 modulation / demodulation circuit 14 transmission / reception circuit
15 Resonant circuit 16a, 16b Electrode plate 24 Receiving circuit 25 Coupling capacitor 29 Interface 30 Host computer 40, 45 IC module 41 IC chip 42 Module board
43 ... Enclosure 44 ... Terminal electrode 46 ... Resin 50 ... Magnetic stripe 51 ... Embossed area 55,55a, 55b ... Card base 56 ... IC module accommodating part 57 ... Fit hole 58 ... Protective sheet 60 ...
Resonance unit 61 Dielectric layer 62 Protective layer 63, 65, 71 IC module fitting hole 66 Intermediate sheet 70 IC module mounting part 100, 200 FET 101, 102
Magnetic core C1, C2, C3 ... capacitors L1, L2, L3
... coils R1, R2, R3 ... resistance RL ... load impedance Vc ... clock signal 112 ... frequency conversion circuit 126 ... smoothing circuit 12
8 Electric circuit 130 Oscillation circuit 131 AC circuit 13
2 ... Resonant capacitors 134, 136, 137 ... Inductance 140 ... Rectifier diode 142 ... Smoothing capacitor Vac ... AC output voltage VDC ... DC voltage Vin ... Primary side voltage Vout ... Secondary side voltage Lx ... Leakage inductance I
L… Load current
───────────────────────────────────────────────────── フロントページの続き (72)発明者 深井 茂 東京都台東区台東１丁目５番１号 凸版印 刷株式会社内 ──────────────────────────────────────────────────続 き Continued on the front page (72) Inventor Shigeru Fukai 1-5-1, Taito, Taito-ku, Tokyo Letterpress Printing Co., Ltd.
Claims (9)
交流磁界を検出し交流電圧を発生させる結合手段と、受
信した信号をデータに変換する信号変換手段と、変換さ
れたデータを格納し処理するためのマイクロプロセッサ
と、該マイクロプロセッサで生成したデータを変換し送
信する送信手段からなる非接触ＩＣ（Integrated Circu
its，集積回路）カードにおいて、 外部に設けられたドライブユニットからの電磁波を伝送
媒体として、その動作に必要な電力の受信と情報の授受
を実現する結合手段として第１コイルを有すると共に、
静電容量素子に並列接続され、ドライブユニットからの
電磁波によってのみ駆動され、かつ静電容量素子とのイ
ンピーダンス値が前記電磁波の周波数に共振するように
選択された第２コイルを有することを特徴とする非接触
ＩＣカード。1. A coupling means for detecting an alternating magnetic field of a predetermined frequency propagating in space and generating an alternating voltage, a signal converting means for converting a received signal into data, and storing and processing the converted data. Contactless IC (Integrated Circuit) comprising a microprocessor for performing conversion and transmitting means for converting and transmitting data generated by the microprocessor.
its integrated circuit) card has a first coil as coupling means for receiving electric power necessary for its operation and transmitting and receiving information, using electromagnetic waves from a drive unit provided outside as a transmission medium,
It has a second coil connected in parallel with the capacitance element, driven only by the electromagnetic wave from the drive unit, and selected so that the impedance value with the capacitance element resonates with the frequency of the electromagnetic wave. Non-contact IC card.
０．０１Ωから０．５Ωの範囲になるように形成されて
いることを特徴とする非接触ＩＣカード。2. A non-contact IC card, wherein the first coil according to claim 1 is formed to have a resistance value in a range of 0.01Ω to 0.5Ω.
基材である誘電体膜を平行平板の２枚の導電体膜で挟み
込むことで形成されたことを特徴とする非接触ＩＣカー
ド。3. A non-contact IC card, wherein the capacitance element according to claim 1 is formed by sandwiching a dielectric film as a card base material between two parallel flat conductive films. .
いて、 前記第２コイルを、前記非接触ＩＣカードの周縁に沿っ
て設けたことを特徴とする非接触ＩＣカード。4. The non-contact IC card according to claim 1, wherein the second coil is provided along a periphery of the non-contact IC card.
いて、 前記第２コイルの少なくとも１巻が、前記第１コイルと
密結合するように、前記第１コイルと同芯状に巻回され
ていることを特徴とする非接触ＩＣカード。5. The non-contact IC card according to claim 1, wherein at least one turn of the second coil is wound concentrically with the first coil so as to be tightly coupled to the first coil. A non-contact IC card characterized in that:
いて、 前記第１，第２コイルが、プリントコイルであることを
特徴とする非接触ＩＣカード。6. The non-contact IC card according to claim 1, wherein the first and second coils are printed coils.
いて、 前記第１，第２コイルは、誘電体膜上に形成されたプリ
ントコイルであって、前記誘電体膜を２枚の平行平板導
体薄膜で挟み込むことで前記静電容量素子を成し、該静
電容量素子を前記プリントコイルと一体に形成すること
を特徴とする非接触ＩＣカード。7. The non-contact IC card according to claim 4, wherein the first and second coils are printed coils formed on a dielectric film, wherein the dielectric film is formed of two parallel flat plates. A non-contact IC card, wherein the capacitance element is formed by being sandwiched between conductive thin films, and the capacitance element is formed integrally with the print coil.
いて、 前記第１，第２コイルが絶縁被膜を施された導線を複数
回巻いた巻線コイルで形成されることを特徴とする非接
触ＩＣカード。8. The non-contact IC card according to claim 1, wherein the first and second coils are formed by winding coils each of which is formed by winding a conductive wire coated with an insulating coating a plurality of times. Contact IC card.
をも有し、該非接触型伝達手段および接触型伝達手段を
介して授受されるデータを処理するＩＣモジュールを具
備する非接触ＩＣカードであって、該非接触ＩＣカード
の本体が複数の材料層からなる非接触ＩＣカードにおい
て、 前記ＩＣモジュールには、その表面に前記接触型伝達手
段が設置されると共に、その周縁部にフランジが設けら
れ、 前記複数の材料層は、 前記ＩＣモジュールを収容する収容部が設けられた少な
くとも１つの材料層と、 前記ＩＣモジュールに設置された接触型伝達手段を前記
非接触ＩＣカードの表面に露出させるための開口部を有
する少なくとも１つの材料層とを有してなり、前記開口
部の周縁部によって、前記ＩＣモジュールのフランジ
を、前記収容部を設けた材料層に固定することを特徴と
する非接触ＩＣカード。9. A non-contact IC card having a contact-type transmission unit as well as a non-contact-type transmission unit and an IC module for processing data transmitted and received through the non-contact-type transmission unit and the contact-type transmission unit. In the non-contact IC card, wherein the main body of the non-contact IC card is composed of a plurality of material layers, the IC module is provided with the contact-type transmitting means on a surface thereof, and a flange is provided on a peripheral portion thereof. The plurality of material layers include: at least one material layer provided with an accommodating portion for accommodating the IC module; and a contact-type transmitting unit provided on the IC module, which is exposed on a surface of the non-contact IC card. At least one material layer having an opening of the IC module. Contactless IC card, characterized in that fixed to the girder material layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP05816497A JP3427663B2 (en) | 1996-06-18 | 1997-03-12 | Non-contact IC card |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP15714096 | 1996-06-18 | ||
| JP8-157140 | 1996-06-18 | ||
| JP05816497A JP3427663B2 (en) | 1996-06-18 | 1997-03-12 | Non-contact IC card |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1069533A true JPH1069533A (en) | 1998-03-10 |
| JP3427663B2 JP3427663B2 (en) | 2003-07-22 |
Family
ID=26399234
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP05816497A Expired - Fee Related JP3427663B2 (en) | 1996-06-18 | 1997-03-12 | Non-contact IC card |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3427663B2 (en) |
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