JPH10512683A - 改善されたイメージングのために吸収／減衰性側壁を備えた移相マスク構造および吸収／減衰性側壁を備えたシフターを作る方法 - Google Patents
改善されたイメージングのために吸収／減衰性側壁を備えた移相マスク構造および吸収／減衰性側壁を備えたシフターを作る方法Info
- Publication number
- JPH10512683A JPH10512683A JP6517002A JP51700294A JPH10512683A JP H10512683 A JPH10512683 A JP H10512683A JP 6517002 A JP6517002 A JP 6517002A JP 51700294 A JP51700294 A JP 51700294A JP H10512683 A JPH10512683 A JP H10512683A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- thin film
- mask
- film layer
- trench
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 230000010363 phase shift Effects 0.000 title claims abstract description 35
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 238000003384 imaging method Methods 0.000 title description 6
- 238000000034 method Methods 0.000 claims abstract description 81
- 239000000758 substrate Substances 0.000 claims abstract description 80
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 47
- 229910052751 metal Inorganic materials 0.000 claims abstract description 43
- 239000002184 metal Substances 0.000 claims abstract description 42
- 239000006185 dispersion Substances 0.000 claims abstract description 29
- 239000000463 material Substances 0.000 claims abstract description 14
- 230000005540 biological transmission Effects 0.000 claims abstract description 11
- 239000010409 thin film Substances 0.000 claims description 44
- 238000000206 photolithography Methods 0.000 claims description 26
- 239000010408 film Substances 0.000 claims description 22
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 20
- 239000007769 metal material Substances 0.000 claims description 14
- 238000005530 etching Methods 0.000 claims description 13
- 239000011651 chromium Substances 0.000 claims description 11
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 229910052710 silicon Inorganic materials 0.000 claims description 10
- 239000010703 silicon Substances 0.000 claims description 10
- 229910052804 chromium Inorganic materials 0.000 claims description 9
- 238000000151 deposition Methods 0.000 claims description 9
- 230000006870 function Effects 0.000 claims description 9
- 229910021332 silicide Inorganic materials 0.000 claims description 7
- 239000002210 silicon-based material Substances 0.000 claims description 7
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 6
- 229910045601 alloy Inorganic materials 0.000 claims description 6
- 239000000956 alloy Substances 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 6
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 6
- 239000010931 gold Substances 0.000 claims description 6
- 229910052737 gold Inorganic materials 0.000 claims description 6
- 229910052750 molybdenum Inorganic materials 0.000 claims description 6
- 239000011733 molybdenum Substances 0.000 claims description 6
- 239000003989 dielectric material Substances 0.000 claims description 4
- 150000002739 metals Chemical class 0.000 claims description 3
- 239000010453 quartz Substances 0.000 abstract description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 18
- 230000031700 light absorption Effects 0.000 abstract description 7
- 238000000149 argon plasma sintering Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 12
- 230000000694 effects Effects 0.000 description 10
- 230000008569 process Effects 0.000 description 10
- 229920003259 poly(silylenemethylene) Polymers 0.000 description 9
- 230000002745 absorbent Effects 0.000 description 8
- 239000002250 absorbent Substances 0.000 description 8
- 230000003287 optical effect Effects 0.000 description 7
- 230000007704 transition Effects 0.000 description 7
- 238000001020 plasma etching Methods 0.000 description 6
- 230000002238 attenuated effect Effects 0.000 description 5
- 239000004020 conductor Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 238000010521 absorption reaction Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 4
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 238000003756 stirring Methods 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 238000013016 damping Methods 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000010884 ion-beam technique Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 230000008439 repair process Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 238000000992 sputter etching Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 239000011358 absorbing material Substances 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 238000001465 metallisation Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- 238000001015 X-ray lithography Methods 0.000 description 1
- 238000002679 ablation Methods 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 238000013459 approach Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 229910052801 chlorine Inorganic materials 0.000 description 1
- 239000000460 chlorine Substances 0.000 description 1
- 230000001427 coherent effect Effects 0.000 description 1
- 238000012937 correction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000003708 edge detection Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000011888 foil Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000007943 implant Substances 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 238000001393 microlithography Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- TXEYQDLBPFQVAA-UHFFFAOYSA-N tetrafluoromethane Chemical compound FC(F)(F)F TXEYQDLBPFQVAA-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US764093A | 1993-01-21 | 1993-01-21 | |
| US763893A | 1993-01-21 | 1993-01-21 | |
| US08/007,640 | 1993-01-21 | ||
| US08/007,638 | 1993-01-21 | ||
| PCT/US1993/012094 WO1994017450A1 (en) | 1993-01-21 | 1993-12-13 | Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging and method of fabricating phase shifters with absorbing/attenuating sidewalls |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH10512683A true JPH10512683A (ja) | 1998-12-02 |
Family
ID=26677231
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP6517002A Pending JPH10512683A (ja) | 1993-01-21 | 1993-12-13 | 改善されたイメージングのために吸収／減衰性側壁を備えた移相マスク構造および吸収／減衰性側壁を備えたシフターを作る方法 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP0680624B1 (enExample) |
| JP (1) | JPH10512683A (enExample) |
| AU (1) | AU5749494A (enExample) |
| DE (1) | DE69309111T2 (enExample) |
| TW (1) | TW320734B (enExample) |
| WO (1) | WO1994017450A1 (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2013254098A (ja) * | 2012-06-07 | 2013-12-19 | Dainippon Printing Co Ltd | フォトマスクおよびその製造方法 |
| JP2016181008A (ja) * | 2016-07-09 | 2016-10-13 | 大日本印刷株式会社 | フォトマスク |
| US9765934B2 (en) | 2011-05-16 | 2017-09-19 | The Board Of Trustees Of The University Of Illinois | Thermally managed LED arrays assembled by printing |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3257893B2 (ja) * | 1993-10-18 | 2002-02-18 | 三菱電機株式会社 | 位相シフトマスク、その位相シフトマスクの製造方法およびその位相シフトマスクを用いた露光方法 |
| US6544694B2 (en) | 2000-03-03 | 2003-04-08 | Koninklijke Philips Electronics N.V. | Method of manufacturing a device by means of a mask phase-shifting mask for use in said method |
| KR100955293B1 (ko) | 2001-05-18 | 2010-04-30 | 코닌클리즈케 필립스 일렉트로닉스 엔.브이. | 디바이스 제조 방법과 초기 패턴의 패턴 피쳐 분배 방법 및 이러한 방법에 따라서 제조된 디바이스, 리소그래피 서브 마스크 그룹 및 이를 이용하여 제조된 디바이스 |
| US7604903B1 (en) * | 2004-01-30 | 2009-10-20 | Advanced Micro Devices, Inc. | Mask having sidewall absorbers to enable the printing of finer features in nanoprint lithography (1XMASK) |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4119483A (en) * | 1974-07-30 | 1978-10-10 | U.S. Philips Corporation | Method of structuring thin layers |
| JP2710967B2 (ja) * | 1988-11-22 | 1998-02-10 | 株式会社日立製作所 | 集積回路装置の製造方法 |
| JP2862183B2 (ja) * | 1989-04-28 | 1999-02-24 | 富士通株式会社 | マスクの製造方法 |
| JP2519815B2 (ja) * | 1990-03-01 | 1996-07-31 | 三菱電機株式会社 | フォトマスク及びその製造方法 |
| DE69131173T2 (de) * | 1990-09-10 | 1999-08-19 | Fujitsu Ltd. | Optische Phasenmaske und Verfahren zur Herstellung |
| JPH04123060A (ja) * | 1990-09-14 | 1992-04-23 | Fujitsu Ltd | 位相シフトマスク及びその形成方法 |
| JPH053146A (ja) * | 1991-04-19 | 1993-01-08 | Hitachi Ltd | Ｘ線露光法 |
-
1993
- 1993-12-13 AU AU57494/94A patent/AU5749494A/en not_active Abandoned
- 1993-12-13 JP JP6517002A patent/JPH10512683A/ja active Pending
- 1993-12-13 WO PCT/US1993/012094 patent/WO1994017450A1/en not_active Ceased
- 1993-12-13 EP EP94903609A patent/EP0680624B1/en not_active Expired - Lifetime
- 1993-12-13 DE DE69309111T patent/DE69309111T2/de not_active Expired - Fee Related
-
1994
- 1994-01-21 TW TW083100499A patent/TW320734B/zh active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9765934B2 (en) | 2011-05-16 | 2017-09-19 | The Board Of Trustees Of The University Of Illinois | Thermally managed LED arrays assembled by printing |
| JP2013254098A (ja) * | 2012-06-07 | 2013-12-19 | Dainippon Printing Co Ltd | フォトマスクおよびその製造方法 |
| JP2016181008A (ja) * | 2016-07-09 | 2016-10-13 | 大日本印刷株式会社 | フォトマスク |
Also Published As
| Publication number | Publication date |
|---|---|
| DE69309111D1 (de) | 1997-04-24 |
| TW320734B (enExample) | 1997-11-21 |
| EP0680624A1 (en) | 1995-11-08 |
| EP0680624B1 (en) | 1997-03-19 |
| WO1994017450A1 (en) | 1994-08-04 |
| DE69309111T2 (de) | 1997-08-21 |
| AU5749494A (en) | 1994-08-15 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US5418095A (en) | Method of fabricating phase shifters with absorbing/attenuating sidewalls using an additive process | |
| US5882827A (en) | Phase shift mask, method of manufacturing phase shift mask and method of forming a pattern using phase shift mask | |
| US5275896A (en) | Single-alignment-level lithographic technique for achieving self-aligned features | |
| US6908715B2 (en) | Multi-layer, attenuated phase-shifting mask | |
| US5411824A (en) | Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging | |
| JP3368947B2 (ja) | レティクル及びレティクル・ブランク | |
| US5153083A (en) | Method of making phase-shifting lithographic masks | |
| US5783337A (en) | Process to fabricate a double layer attenuated phase shift mask (APSM) with chrome border | |
| JP2996127B2 (ja) | パターン形成方法 | |
| US5244759A (en) | Single-alignment-level lithographic technique for achieving self-aligned features | |
| JP2004207593A (ja) | 極限紫外線露光用マスク及びブランク並びにパターン転写方法 | |
| JP3072006B2 (ja) | フォトマスク | |
| US5358827A (en) | Phase-shifting lithographic masks with improved resolution | |
| US5589303A (en) | Self-aligned opaque regions for attenuating phase-shifting masks | |
| JPH10512683A (ja) | 改善されたイメージングのために吸収／減衰性側壁を備えた移相マスク構造および吸収／減衰性側壁を備えたシフターを作る方法 | |
| JP2641362B2 (ja) | リソグラフィー方法および位相シフトマスクの作製方法 | |
| JP3351485B2 (ja) | 位相シフトマスクの製造方法 | |
| JPH1097052A (ja) | 露光量調節による位相反転マスクの製造方法 | |
| JP3345447B2 (ja) | 露光用マスクの製造方法 | |
| EP0553543B1 (en) | Phase shift mask and method for forming resist pattern using said mask | |
| JPH07152140A (ja) | ハーフトーン型位相シフトマスクの製造方法 | |
| US5538819A (en) | Self-aligned alignment marks for phase-shifting masks | |
| JP3178516B2 (ja) | 位相シフトマスク | |
| JP2002303967A (ja) | 露光用マスク、露光用マスクの製造方法及びこの露光用マスクを用いた露光方法 | |
| JP2005181721A (ja) | ハーフトーン位相シフトマスク |