DE69309111D1 - Phasenverschiebungsmaskenstruktur mit lichtabsorbierenden/lichtdämpfenden seitenwänden und verfahren zum aufbauen von phasenverschiebern - Google Patents
Phasenverschiebungsmaskenstruktur mit lichtabsorbierenden/lichtdämpfenden seitenwänden und verfahren zum aufbauen von phasenverschiebernInfo
- Publication number
- DE69309111D1 DE69309111D1 DE69309111T DE69309111T DE69309111D1 DE 69309111 D1 DE69309111 D1 DE 69309111D1 DE 69309111 T DE69309111 T DE 69309111T DE 69309111 T DE69309111 T DE 69309111T DE 69309111 D1 DE69309111 D1 DE 69309111D1
- Authority
- DE
- Germany
- Prior art keywords
- light
- side walls
- shift mask
- mask structure
- phase shift
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
- G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US764093A | 1993-01-21 | 1993-01-21 | |
US763893A | 1993-01-21 | 1993-01-21 | |
PCT/US1993/012094 WO1994017450A1 (en) | 1993-01-21 | 1993-12-13 | Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging and method of fabricating phase shifters with absorbing/attenuating sidewalls |
Publications (2)
Publication Number | Publication Date |
---|---|
DE69309111D1 true DE69309111D1 (de) | 1997-04-24 |
DE69309111T2 DE69309111T2 (de) | 1997-08-21 |
Family
ID=26677231
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
DE69309111T Expired - Fee Related DE69309111T2 (de) | 1993-01-21 | 1993-12-13 | Phasenverschiebungsmaskenstruktur mit lichtabsorbierenden/lichtdämpfenden seitenwänden und verfahren zum aufbauen von phasenverschiebern |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP0680624B1 (de) |
JP (1) | JPH10512683A (de) |
AU (1) | AU5749494A (de) |
DE (1) | DE69309111T2 (de) |
TW (1) | TW320734B (de) |
WO (1) | WO1994017450A1 (de) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3257893B2 (ja) * | 1993-10-18 | 2002-02-18 | 三菱電機株式会社 | 位相シフトマスク、その位相シフトマスクの製造方法およびその位相シフトマスクを用いた露光方法 |
US6544694B2 (en) | 2000-03-03 | 2003-04-08 | Koninklijke Philips Electronics N.V. | Method of manufacturing a device by means of a mask phase-shifting mask for use in said method |
EP1395877B1 (de) | 2001-05-18 | 2011-03-09 | Koninklijke Philips Electronics N.V. | Lithographische methode zur erzeugung eines elements |
US7604903B1 (en) * | 2004-01-30 | 2009-10-20 | Advanced Micro Devices, Inc. | Mask having sidewall absorbers to enable the printing of finer features in nanoprint lithography (1XMASK) |
WO2012158709A1 (en) | 2011-05-16 | 2012-11-22 | The Board Of Trustees Of The University Of Illinois | Thermally managed led arrays assembled by printing |
JP6035884B2 (ja) * | 2012-06-07 | 2016-11-30 | 大日本印刷株式会社 | フォトマスクの製造方法 |
JP6315033B2 (ja) * | 2016-07-09 | 2018-04-25 | 大日本印刷株式会社 | フォトマスク |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4119483A (en) * | 1974-07-30 | 1978-10-10 | U.S. Philips Corporation | Method of structuring thin layers |
JP2710967B2 (ja) * | 1988-11-22 | 1998-02-10 | 株式会社日立製作所 | 集積回路装置の製造方法 |
DE69028871T2 (de) * | 1989-04-28 | 1997-02-27 | Fujitsu Ltd | Maske, Herstellungsverfahren und Musterherstellung mit einer solchen Maske |
JP2519815B2 (ja) * | 1990-03-01 | 1996-07-31 | 三菱電機株式会社 | フォトマスク及びその製造方法 |
EP0843217A3 (de) * | 1990-09-10 | 1998-12-16 | Fujitsu Limited | Optische Phasenmaske und Verfahren zur Herstellung |
JPH04123060A (ja) * | 1990-09-14 | 1992-04-23 | Fujitsu Ltd | 位相シフトマスク及びその形成方法 |
JPH053146A (ja) * | 1991-04-19 | 1993-01-08 | Hitachi Ltd | X線露光法 |
-
1993
- 1993-12-13 EP EP94903609A patent/EP0680624B1/de not_active Expired - Lifetime
- 1993-12-13 WO PCT/US1993/012094 patent/WO1994017450A1/en active IP Right Grant
- 1993-12-13 AU AU57494/94A patent/AU5749494A/en not_active Abandoned
- 1993-12-13 DE DE69309111T patent/DE69309111T2/de not_active Expired - Fee Related
- 1993-12-13 JP JP6517002A patent/JPH10512683A/ja active Pending
-
1994
- 1994-01-21 TW TW083100499A patent/TW320734B/zh active
Also Published As
Publication number | Publication date |
---|---|
AU5749494A (en) | 1994-08-15 |
DE69309111T2 (de) | 1997-08-21 |
JPH10512683A (ja) | 1998-12-02 |
EP0680624A1 (de) | 1995-11-08 |
WO1994017450A1 (en) | 1994-08-04 |
EP0680624B1 (de) | 1997-03-19 |
TW320734B (de) | 1997-11-21 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
8364 | No opposition during term of opposition | ||
8339 | Ceased/non-payment of the annual fee |