AU5749494A - Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging and method of fabricating phase shifters with absorbing/attenuating sidewalls - Google Patents

Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging and method of fabricating phase shifters with absorbing/attenuating sidewalls

Info

Publication number
AU5749494A
AU5749494A AU57494/94A AU5749494A AU5749494A AU 5749494 A AU5749494 A AU 5749494A AU 57494/94 A AU57494/94 A AU 57494/94A AU 5749494 A AU5749494 A AU 5749494A AU 5749494 A AU5749494 A AU 5749494A
Authority
AU
Australia
Prior art keywords
absorbing
attenuating
sidewalls
attenuating sidewalls
mask structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Abandoned
Application number
AU57494/94A
Other languages
English (en)
Inventor
Kah Kuen Low
Prahalad K Vasudev
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
State University of New York Polytechnic Institute
Original Assignee
Sematech Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sematech Inc filed Critical Sematech Inc
Publication of AU5749494A publication Critical patent/AU5749494A/en
Abandoned legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/32—Attenuating PSM [att-PSM], e.g. halftone PSM or PSM having semi-transparent phase shift portion; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/26—Phase shift masks [PSM]; PSM blanks; Preparation thereof
    • G03F1/34—Phase-edge PSM, e.g. chromeless PSM; Preparation thereof
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
AU57494/94A 1993-01-21 1993-12-13 Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging and method of fabricating phase shifters with absorbing/attenuating sidewalls Abandoned AU5749494A (en)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US764093A 1993-01-21 1993-01-21
US763893A 1993-01-21 1993-01-21
US007640 1993-01-21
US007638 1993-01-21
PCT/US1993/012094 WO1994017450A1 (en) 1993-01-21 1993-12-13 Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging and method of fabricating phase shifters with absorbing/attenuating sidewalls

Publications (1)

Publication Number Publication Date
AU5749494A true AU5749494A (en) 1994-08-15

Family

ID=26677231

Family Applications (1)

Application Number Title Priority Date Filing Date
AU57494/94A Abandoned AU5749494A (en) 1993-01-21 1993-12-13 Phase shifting mask structure with absorbing/attenuating sidewalls for improved imaging and method of fabricating phase shifters with absorbing/attenuating sidewalls

Country Status (6)

Country Link
EP (1) EP0680624B1 (enExample)
JP (1) JPH10512683A (enExample)
AU (1) AU5749494A (enExample)
DE (1) DE69309111T2 (enExample)
TW (1) TW320734B (enExample)
WO (1) WO1994017450A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3257893B2 (ja) * 1993-10-18 2002-02-18 三菱電機株式会社 位相シフトマスク、その位相シフトマスクの製造方法およびその位相シフトマスクを用いた露光方法
US6544694B2 (en) 2000-03-03 2003-04-08 Koninklijke Philips Electronics N.V. Method of manufacturing a device by means of a mask phase-shifting mask for use in said method
KR100955293B1 (ko) 2001-05-18 2010-04-30 코닌클리즈케 필립스 일렉트로닉스 엔.브이. 디바이스 제조 방법과 초기 패턴의 패턴 피쳐 분배 방법 및 이러한 방법에 따라서 제조된 디바이스, 리소그래피 서브 마스크 그룹 및 이를 이용하여 제조된 디바이스
US7604903B1 (en) * 2004-01-30 2009-10-20 Advanced Micro Devices, Inc. Mask having sidewall absorbers to enable the printing of finer features in nanoprint lithography (1XMASK)
WO2012158709A1 (en) 2011-05-16 2012-11-22 The Board Of Trustees Of The University Of Illinois Thermally managed led arrays assembled by printing
JP6035884B2 (ja) * 2012-06-07 2016-11-30 大日本印刷株式会社 フォトマスクの製造方法
JP6315033B2 (ja) * 2016-07-09 2018-04-25 大日本印刷株式会社 フォトマスク

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4119483A (en) * 1974-07-30 1978-10-10 U.S. Philips Corporation Method of structuring thin layers
JP2710967B2 (ja) * 1988-11-22 1998-02-10 株式会社日立製作所 集積回路装置の製造方法
JP2862183B2 (ja) * 1989-04-28 1999-02-24 富士通株式会社 マスクの製造方法
JP2519815B2 (ja) * 1990-03-01 1996-07-31 三菱電機株式会社 フォトマスク及びその製造方法
DE69131173T2 (de) * 1990-09-10 1999-08-19 Fujitsu Ltd. Optische Phasenmaske und Verfahren zur Herstellung
JPH04123060A (ja) * 1990-09-14 1992-04-23 Fujitsu Ltd 位相シフトマスク及びその形成方法
JPH053146A (ja) * 1991-04-19 1993-01-08 Hitachi Ltd Ｘ線露光法

Also Published As

Publication number Publication date
DE69309111D1 (de) 1997-04-24
TW320734B (enExample) 1997-11-21
JPH10512683A (ja) 1998-12-02
EP0680624A1 (en) 1995-11-08
EP0680624B1 (en) 1997-03-19
WO1994017450A1 (en) 1994-08-04
DE69309111T2 (de) 1997-08-21

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