JPH10508113A - 光学部品 - Google Patents
光学部品Info
- Publication number
- JPH10508113A JPH10508113A JP7501185A JP50118595A JPH10508113A JP H10508113 A JPH10508113 A JP H10508113A JP 7501185 A JP7501185 A JP 7501185A JP 50118595 A JP50118595 A JP 50118595A JP H10508113 A JPH10508113 A JP H10508113A
- Authority
- JP
- Japan
- Prior art keywords
- film
- refractive index
- optical
- films
- optical component
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000003287 optical effect Effects 0.000 title claims abstract description 28
- 239000010408 film Substances 0.000 claims abstract description 41
- 229910021426 porous silicon Inorganic materials 0.000 claims abstract description 12
- 239000010409 thin film Substances 0.000 claims abstract description 7
- 238000000034 method Methods 0.000 claims description 6
- 230000003247 decreasing effect Effects 0.000 claims 1
- 239000000463 material Substances 0.000 abstract description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 6
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- 230000008901 benefit Effects 0.000 abstract description 2
- 210000004379 membrane Anatomy 0.000 description 17
- 239000012528 membrane Substances 0.000 description 15
- 230000000694 effects Effects 0.000 description 6
- 238000005530 etching Methods 0.000 description 5
- 230000008859 change Effects 0.000 description 4
- 230000008569 process Effects 0.000 description 4
- 230000009471 action Effects 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000001914 filtration Methods 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 235000010044 Hernandia moerenhoutiana Nutrition 0.000 description 1
- 244000084296 Hernandia moerenhoutiana Species 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 239000013039 cover film Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 239000003365 glass fiber Substances 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- 239000012788 optical film Substances 0.000 description 1
- 230000008520 organization Effects 0.000 description 1
- 230000000737 periodic effect Effects 0.000 description 1
- 230000002040 relaxant effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0216—Coatings
- H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
- H01L31/02165—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/103—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier being of the PN homojunction type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/34—Materials of the light emitting region containing only elements of Group IV of the Periodic Table
- H01L33/346—Materials of the light emitting region containing only elements of Group IV of the Periodic Table containing porous silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3223—IV compounds
- H01S5/3224—Si
- H01S5/3227—Si porous Si
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Optical Filters (AREA)
- Optical Integrated Circuits (AREA)
- Spectrometry And Color Measurement (AREA)
- Led Devices (AREA)
Abstract
Description
Claims (1)
- 【特許請求の範囲】 1.厚さが異なり屈折率の異なる透明薄膜で構成された光学部品において、 これ等の薄膜が多孔質シリコンで構成されていることを特徴とする光学部品。 2.前記薄膜は干渉フィルターあるいは干渉ミラーの様式の厚さと屈折率を有し 、そのような部品として使用されることを特徴とする請求の範囲第1項に記載の 光学部品。 3.前記薄膜は連続的に変わる屈折率を有することを特徴とする請求の範囲第1 項に記載の光学部品。 4.膜配列は徐々に増加して再び減少する屈折率を有することを特徴とする請求 の範囲第3項に記載の光学部品。
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE4319413A DE4319413C2 (de) | 1993-06-14 | 1993-06-14 | Interferenzfilter oder dielektrischer Spiegel |
DE4319413.3 | 1993-06-14 | ||
PCT/DE1994/000635 WO1994029757A1 (de) | 1993-06-14 | 1994-06-08 | Optisches bauelement |
Publications (2)
Publication Number | Publication Date |
---|---|
JPH10508113A true JPH10508113A (ja) | 1998-08-04 |
JP3615760B2 JP3615760B2 (ja) | 2005-02-02 |
Family
ID=6490150
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP50118595A Expired - Lifetime JP3615760B2 (ja) | 1993-06-14 | 1994-06-08 | 光学部品 |
Country Status (5)
Country | Link |
---|---|
US (1) | US5696629A (ja) |
EP (1) | EP0704068B1 (ja) |
JP (1) | JP3615760B2 (ja) |
DE (2) | DE4319413C2 (ja) |
WO (1) | WO1994029757A1 (ja) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8475916B2 (en) | 2007-04-27 | 2013-07-02 | Empire Technology Development Llc | Antireflection film and method for manufacturing the same |
Families Citing this family (35)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5828118A (en) * | 1993-09-09 | 1998-10-27 | The United States Of America As Represented By The Secretary Of The Navy | System which uses porous silicon for down converting electromagnetic energy to an energy level within the bandpass of an electromagnetic energy detector |
US5699188A (en) * | 1995-06-26 | 1997-12-16 | Minnesota Mining And Manufacturing Co. | Metal-coated multilayer mirror |
DE19609073A1 (de) * | 1996-03-08 | 1997-09-11 | Forschungszentrum Juelich Gmbh | Farbselektives Si-Detektorarray |
GB2312090A (en) * | 1996-04-10 | 1997-10-15 | Rank Taylor Hobson Ltd | Photosensitive device |
DE19622748A1 (de) * | 1996-06-05 | 1997-12-11 | Forschungszentrum Juelich Gmbh | Interferenzfilter auf der Basis von porösem Silicium |
DE19638885C1 (de) * | 1996-09-21 | 1998-04-23 | Forschungszentrum Juelich Gmbh | Optisches Beugungsgitter auf der Basis eines porösen Materials |
DE19653097A1 (de) * | 1996-12-20 | 1998-07-02 | Forschungszentrum Juelich Gmbh | Schicht mit porösem Schichtbereich, eine solche Schicht enthaltendes Interferenzfilter sowie Verfahren zu ihrer Herstellung |
FR2758003B1 (fr) * | 1996-12-27 | 1999-06-18 | France Telecom | Traitement anti-reflet de surfaces reflectives |
DE19738607B4 (de) * | 1997-09-04 | 2008-07-31 | Robert Bosch Gmbh | Mikrospiegel und Verfahren zur Herstellung eines Mikrospiegels |
US6037612A (en) | 1997-09-11 | 2000-03-14 | Kokusai Denshin Denwa Kabushiki Kaisha | Semiconductor light emitting device having nanostructure porous silicon and mesostructure porous silicon |
DE19740096A1 (de) * | 1997-09-12 | 1999-03-25 | Forschungszentrum Juelich Gmbh | Verfahren zur Herstellung einer oder mehrerer optischer Komponenten in porösem Silicium sowie solche optische Komponenten enthaltenes Bauelement |
DE19746089A1 (de) * | 1997-10-20 | 1999-04-29 | Forschungszentrum Juelich Gmbh | Eine Filterstruktur aufweisendes Bauelement |
DE19757560A1 (de) * | 1997-12-23 | 1999-07-01 | Forschungszentrum Juelich Gmbh | Verfahren zur Herstellung einer porösen Schicht mit Hilfe eines elektrochemischen Ätzprozesses |
AU4593499A (en) | 1998-07-03 | 2000-01-24 | Interuniversitair Micro-Elektronica Centrum | A thin-film opto-electronic device and a method of making it |
EP0969522A1 (en) * | 1998-07-03 | 2000-01-05 | Interuniversitair Microelektronica Centrum Vzw | A thin-film opto-electronic device and a method of making it |
DE19900879A1 (de) | 1999-01-12 | 2000-08-17 | Forschungszentrum Juelich Gmbh | Optischer Detektor mit einer Filterschicht aus porösem Silizium und Herstellungsverfahren dazu |
US6370307B1 (en) * | 1999-07-15 | 2002-04-09 | Agere Systems Guardian Corp. | Optical device formed on a substrate with thermal isolation regions formed therein |
FR2797093B1 (fr) * | 1999-07-26 | 2001-11-02 | France Telecom | Procede de realisation d'un dispositif comprenant un empilement de plans de boites quantiques sur un substrat de silicium ou germanium monocristallin |
EP1088785A1 (fr) * | 1999-09-10 | 2001-04-04 | Ecole Polytechnique Federale De Lausanne | Procédé de fabrication d'une microstructure intégrée suspendue tridimensionnelle, microstructure intégrée notamment obtenue par ce procédé et élément optique intégré réglable |
DE10160987B4 (de) * | 2001-12-05 | 2005-08-04 | Siemens Ag | Baueinheit zur simultanen, optischen Beleuchtung einer Vielzahl von Proben |
WO2003067231A1 (en) * | 2002-02-07 | 2003-08-14 | The Regents Of The University Of California | Optically encoded particles |
US7022544B2 (en) * | 2002-12-18 | 2006-04-04 | International Business Machines Corporation | High speed photodiode with a barrier layer for blocking or eliminating slow photonic carriers and method for forming same |
CN1918304B (zh) * | 2003-12-22 | 2011-08-10 | 加利福尼亚大学董事会 | 光学编码粒子、系统及高通量筛选 |
US7560018B2 (en) | 2004-01-21 | 2009-07-14 | Lake Shore Cryotronics, Inc. | Semiconductor electrochemical etching processes employing closed loop control |
US20060027459A1 (en) * | 2004-05-28 | 2006-02-09 | Lake Shore Cryotronics, Inc. | Mesoporous silicon infrared filters and methods of making same |
US7994600B2 (en) * | 2005-12-21 | 2011-08-09 | Texas Instruments Incorporated | Antireflective coating |
CN101861655A (zh) * | 2007-06-18 | 2010-10-13 | 益科博能源设备(三亚)有限公司 | 利用波导方式传输在散射介质中产生的光照的方法与装置 |
US7808657B2 (en) * | 2007-06-28 | 2010-10-05 | International Business Machines Corporation | Wafer and stage alignment using photonic devices |
EP2220520A4 (en) * | 2007-11-08 | 2013-07-17 | Brian M Sager | IMPROVED ANTI-REFLECTION COATING |
US8080849B2 (en) * | 2008-01-17 | 2011-12-20 | International Business Machines Corporation | Characterizing films using optical filter pseudo substrate |
US20090316250A1 (en) * | 2008-06-18 | 2009-12-24 | Lee Boman | Window having wavelength selectivity and photovoltaic capability |
US8908261B2 (en) * | 2011-01-26 | 2014-12-09 | Massachusetts Institute Of Technology | Device and method for luminescence enhancement by resonant energy transfer from an absorptive thin film |
MX351488B (es) * | 2013-05-17 | 2017-06-30 | Univ Autonoma Del Estado De Morelos | Estructura antirreflejante cuasi-omnidireccional basada en multicapas dieléctricas de silicio poroso para la región ultravioleta media, visible e infrarroja cercana al espectro electromagnético. |
CN103779636B (zh) * | 2014-01-10 | 2015-10-28 | 上海理工大学 | 基于多孔硅的太赫兹滤波器 |
CN105842785A (zh) * | 2016-05-20 | 2016-08-10 | 燕山大学 | 基于啁啾多孔硅光子晶体的多通道滤波器 |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4271210A (en) * | 1979-10-25 | 1981-06-02 | Westinghouse Electric Corp. | Method of forming transmissive, porous metal oxide optical layer of a vitreous substrate |
US4535026A (en) * | 1983-06-29 | 1985-08-13 | The United States Of America As Represented By The United States Department Of Energy | Antireflective graded index silica coating, method for making |
US4633131A (en) * | 1984-12-12 | 1986-12-30 | North American Philips Corporation | Halo-reducing faceplate arrangement |
JPS61170702A (ja) * | 1985-01-25 | 1986-08-01 | Kunio Yoshida | 光学薄膜の製作方法 |
US5218472A (en) * | 1989-03-22 | 1993-06-08 | Alcan International Limited | Optical interference structures incorporating porous films |
-
1993
- 1993-06-14 DE DE4319413A patent/DE4319413C2/de not_active Expired - Lifetime
-
1994
- 1994-06-08 JP JP50118595A patent/JP3615760B2/ja not_active Expired - Lifetime
- 1994-06-08 WO PCT/DE1994/000635 patent/WO1994029757A1/de active IP Right Grant
- 1994-06-08 EP EP94916885A patent/EP0704068B1/de not_active Expired - Lifetime
- 1994-06-08 US US08/564,335 patent/US5696629A/en not_active Expired - Lifetime
- 1994-06-08 DE DE59409521T patent/DE59409521D1/de not_active Expired - Lifetime
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8475916B2 (en) | 2007-04-27 | 2013-07-02 | Empire Technology Development Llc | Antireflection film and method for manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
DE4319413A1 (de) | 1994-12-15 |
US5696629A (en) | 1997-12-09 |
EP0704068A1 (de) | 1996-04-03 |
JP3615760B2 (ja) | 2005-02-02 |
DE59409521D1 (de) | 2000-10-19 |
EP0704068B1 (de) | 2000-09-13 |
DE4319413C2 (de) | 1999-06-10 |
WO1994029757A1 (de) | 1994-12-22 |
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