MX351488B - Estructura antirreflejante cuasi-omnidireccional basada en multicapas dieléctricas de silicio poroso para la región ultravioleta media, visible e infrarroja cercana al espectro electromagnético. - Google Patents
Estructura antirreflejante cuasi-omnidireccional basada en multicapas dieléctricas de silicio poroso para la región ultravioleta media, visible e infrarroja cercana al espectro electromagnético.Info
- Publication number
- MX351488B MX351488B MX2013005576A MX2013005576A MX351488B MX 351488 B MX351488 B MX 351488B MX 2013005576 A MX2013005576 A MX 2013005576A MX 2013005576 A MX2013005576 A MX 2013005576A MX 351488 B MX351488 B MX 351488B
- Authority
- MX
- Mexico
- Prior art keywords
- porous silicon
- structure based
- layer
- quasi
- visible
- Prior art date
Links
Classifications
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/32—Anodisation of semiconducting materials
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- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D9/00—Electrolytic coating other than with metals
- C25D9/04—Electrolytic coating other than with metals with inorganic materials
- C25D9/06—Electrolytic coating other than with metals with inorganic materials by anodic processes
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Electrochemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Photovoltaic Devices (AREA)
- Surface Treatment Of Optical Elements (AREA)
- Paints Or Removers (AREA)
Abstract
Estructura antireflejante basada en multicapas de silicio poroso apiladas en forma unidimensional. Esta capa tiene la capacidad de reflejar menos del 4% de la luz incidente en cualquier ángulo, es decir esta propiedad no depende de la posición en la cual se Le oriente. Ello se cumple para un rango de longitudes de onda que van desde 200 nm a 2000 nm y tan sólo con un espesor físico total de 510 nm. La estructura consta de 51 capas con porosidades graduales que van del 92 al 38 %. La longitud de cada capa es constante e igual a 10 nm y el perfil del índice de refracción varía por medio de una función envolvente que crece monótonamente de la forma f(z)=n0+(nF-n0)(z/L)k con z la profundidad de la capa. El dispositivo se fabricó con el método de anodizado electroquímico en una solución electrolítica de ácido fluorhídrico y etanol, atacando obleas de silicio de forma galvanostatíca en una interfaz controlada.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MX2013005576A MX351488B (es) | 2013-05-17 | 2013-05-17 | Estructura antirreflejante cuasi-omnidireccional basada en multicapas dieléctricas de silicio poroso para la región ultravioleta media, visible e infrarroja cercana al espectro electromagnético. |
| PCT/MX2014/000071 WO2014185767A2 (es) | 2013-05-17 | 2014-05-16 | Estructura antireflejante cuasi-omnidireccional basada en multicapas dieléctricas de silicio poroso para la región ultravioleta media, visible e infrarroja cercana del espectro electromagnético |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MX2013005576A MX351488B (es) | 2013-05-17 | 2013-05-17 | Estructura antirreflejante cuasi-omnidireccional basada en multicapas dieléctricas de silicio poroso para la región ultravioleta media, visible e infrarroja cercana al espectro electromagnético. |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MX2013005576A MX2013005576A (es) | 2014-11-17 |
| MX351488B true MX351488B (es) | 2017-06-30 |
Family
ID=51898954
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MX2013005576A MX351488B (es) | 2013-05-17 | 2013-05-17 | Estructura antirreflejante cuasi-omnidireccional basada en multicapas dieléctricas de silicio poroso para la región ultravioleta media, visible e infrarroja cercana al espectro electromagnético. |
Country Status (2)
| Country | Link |
|---|---|
| MX (1) | MX351488B (es) |
| WO (1) | WO2014185767A2 (es) |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE4319413C2 (de) * | 1993-06-14 | 1999-06-10 | Forschungszentrum Juelich Gmbh | Interferenzfilter oder dielektrischer Spiegel |
| US7903338B1 (en) * | 2006-07-08 | 2011-03-08 | Cirrex Systems Llc | Method and system for managing light at an optical interface |
| WO2009062140A2 (en) * | 2007-11-08 | 2009-05-14 | Sager Brian M | Improved anti-reflective coating |
| KR20120012555A (ko) * | 2010-08-02 | 2012-02-10 | 광주과학기술원 | 점진적으로 굴절률이 변하는 실리콘 다층 무반사막 및 그 제조방법 및 이를 구비하는 태양전지 및 그 제조방법 |
-
2013
- 2013-05-17 MX MX2013005576A patent/MX351488B/es active IP Right Grant
-
2014
- 2014-05-16 WO PCT/MX2014/000071 patent/WO2014185767A2/es active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| MX2013005576A (es) | 2014-11-17 |
| WO2014185767A2 (es) | 2014-11-20 |
| WO2014185767A3 (es) | 2015-09-17 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG | Grant or registration |