WO2014185767A3 - Estructura antireflejante cuasi-omnidireccional basada en multicapas dieléctricas de silicio poroso para la región ultravioleta media, visible e infrarroja cercana del espectro electromagnético - Google Patents
Estructura antireflejante cuasi-omnidireccional basada en multicapas dieléctricas de silicio poroso para la región ultravioleta media, visible e infrarroja cercana del espectro electromagnético Download PDFInfo
- Publication number
- WO2014185767A3 WO2014185767A3 PCT/MX2014/000071 MX2014000071W WO2014185767A3 WO 2014185767 A3 WO2014185767 A3 WO 2014185767A3 MX 2014000071 W MX2014000071 W MX 2014000071W WO 2014185767 A3 WO2014185767 A3 WO 2014185767A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- quasi
- infrared
- reflecting structure
- near infrared
- Prior art date
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Classifications
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D11/00—Electrolytic coating by surface reaction, i.e. forming conversion layers
- C25D11/02—Anodisation
- C25D11/32—Anodisation of semiconducting materials
-
- C—CHEMISTRY; METALLURGY
- C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
- C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
- C25D9/00—Electrolytic coating other than with metals
- C25D9/04—Electrolytic coating other than with metals with inorganic materials
- C25D9/06—Electrolytic coating other than with metals with inorganic materials by anodic processes
Abstract
Estructura antireflejante basada en multicapas de silicio poroso apiladas en forma unidimensional. Esta capa tiene la capacidad de reflejar menos del 4% de la luz incidente en cualquier ángulo, es decir esta propiedad no depende de la posición en la cual se le oriente. Ello se cumple para un rango de longitudes de onda que van desde 200 nm a 2000 nm y tan sólo con un espesor físico total de 510 nm. La estructura consta de 51 capas con porosidades graduales que van del 92 al 38 %. La longitud de cada capa es constante e igual a 10 nm y el perfil del índice de refracción varía por medio de una función envolvente que crece monótonamente de la forma f(z)=n
0
+(n
F
-n
0
)(z/L)
k,
con z la profundidad de la capa. El dispositivo se fabricó con el método de anodizado electroquímico en una solución electrolítica de ácido fluorhídrico y etanol, atacando obleas de silicio de forma galvanostatíca en una interfaz controlada.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
MXMX/A/2013/005576 | 2013-05-17 | ||
MX2013005576A MX351488B (es) | 2013-05-17 | 2013-05-17 | Estructura antirreflejante cuasi-omnidireccional basada en multicapas dieléctricas de silicio poroso para la región ultravioleta media, visible e infrarroja cercana al espectro electromagnético. |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2014185767A2 WO2014185767A2 (es) | 2014-11-20 |
WO2014185767A3 true WO2014185767A3 (es) | 2015-09-17 |
Family
ID=51898954
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/MX2014/000071 WO2014185767A2 (es) | 2013-05-17 | 2014-05-16 | Estructura antireflejante cuasi-omnidireccional basada en multicapas dieléctricas de silicio poroso para la región ultravioleta media, visible e infrarroja cercana del espectro electromagnético |
Country Status (2)
Country | Link |
---|---|
MX (1) | MX351488B (es) |
WO (1) | WO2014185767A2 (es) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5696629A (en) * | 1993-06-14 | 1997-12-09 | Forschungszentrum Julich Gmbh | Optical component comprising layers of porous silicon |
US20110019277A1 (en) * | 2007-11-08 | 2011-01-27 | Sager Brian M | anti-reflective coating |
US7903338B1 (en) * | 2006-07-08 | 2011-03-08 | Cirrex Systems Llc | Method and system for managing light at an optical interface |
US20130087194A1 (en) * | 2010-08-02 | 2013-04-11 | Gwangju Institute Of Science And Technology | Silicon multilayer anti-reflective film with gradually varying refractive index and manufacturing method therefor, and solar cell having same and manufacturing method therefor |
-
2013
- 2013-05-17 MX MX2013005576A patent/MX351488B/es active IP Right Grant
-
2014
- 2014-05-16 WO PCT/MX2014/000071 patent/WO2014185767A2/es active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5696629A (en) * | 1993-06-14 | 1997-12-09 | Forschungszentrum Julich Gmbh | Optical component comprising layers of porous silicon |
US7903338B1 (en) * | 2006-07-08 | 2011-03-08 | Cirrex Systems Llc | Method and system for managing light at an optical interface |
US20110019277A1 (en) * | 2007-11-08 | 2011-01-27 | Sager Brian M | anti-reflective coating |
US20130087194A1 (en) * | 2010-08-02 | 2013-04-11 | Gwangju Institute Of Science And Technology | Silicon multilayer anti-reflective film with gradually varying refractive index and manufacturing method therefor, and solar cell having same and manufacturing method therefor |
Also Published As
Publication number | Publication date |
---|---|
MX2013005576A (es) | 2014-11-17 |
WO2014185767A2 (es) | 2014-11-20 |
MX351488B (es) | 2017-06-30 |
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