WO2014185767A3 - Estructura antireflejante cuasi-omnidireccional basada en multicapas dieléctricas de silicio poroso para la región ultravioleta media, visible e infrarroja cercana del espectro electromagnético - Google Patents

Estructura antireflejante cuasi-omnidireccional basada en multicapas dieléctricas de silicio poroso para la región ultravioleta media, visible e infrarroja cercana del espectro electromagnético Download PDF

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Publication number
WO2014185767A3
WO2014185767A3 PCT/MX2014/000071 MX2014000071W WO2014185767A3 WO 2014185767 A3 WO2014185767 A3 WO 2014185767A3 MX 2014000071 W MX2014000071 W MX 2014000071W WO 2014185767 A3 WO2014185767 A3 WO 2014185767A3
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WO
WIPO (PCT)
Prior art keywords
layer
quasi
infrared
reflecting structure
near infrared
Prior art date
Application number
PCT/MX2014/000071
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English (en)
French (fr)
Other versions
WO2014185767A2 (es
Inventor
Vivechana AGARWAL
Augusto David ARIZA FLORES
José Samuel PEREZ HUERTA
Yogesh Kumar
Original Assignee
Universidad Autónoma Del Estado De Morelos
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Universidad Autónoma Del Estado De Morelos filed Critical Universidad Autónoma Del Estado De Morelos
Publication of WO2014185767A2 publication Critical patent/WO2014185767A2/es
Publication of WO2014185767A3 publication Critical patent/WO2014185767A3/es

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Classifications

    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D11/00Electrolytic coating by surface reaction, i.e. forming conversion layers
    • C25D11/02Anodisation
    • C25D11/32Anodisation of semiconducting materials
    • CCHEMISTRY; METALLURGY
    • C25ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25DPROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D9/00Electrolytic coating other than with metals
    • C25D9/04Electrolytic coating other than with metals with inorganic materials
    • C25D9/06Electrolytic coating other than with metals with inorganic materials by anodic processes

Abstract

Estructura antireflejante basada en multicapas de silicio poroso apiladas en forma unidimensional. Esta capa tiene la capacidad de reflejar menos del 4% de la luz incidente en cualquier ángulo, es decir esta propiedad no depende de la posición en la cual se le oriente. Ello se cumple para un rango de longitudes de onda que van desde 200 nm a 2000 nm y tan sólo con un espesor físico total de 510 nm. La estructura consta de 51 capas con porosidades graduales que van del 92 al 38 %. La longitud de cada capa es constante e igual a 10 nm y el perfil del índice de refracción varía por medio de una función envolvente que crece monótonamente de la forma f(z)=n 0 +(n F -n 0 )(z/L) k, con z la profundidad de la capa. El dispositivo se fabricó con el método de anodizado electroquímico en una solución electrolítica de ácido fluorhídrico y etanol, atacando obleas de silicio de forma galvanostatíca en una interfaz controlada.
PCT/MX2014/000071 2013-05-17 2014-05-16 Estructura antireflejante cuasi-omnidireccional basada en multicapas dieléctricas de silicio poroso para la región ultravioleta media, visible e infrarroja cercana del espectro electromagnético WO2014185767A2 (es)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
MXMX/A/2013/005576 2013-05-17
MX2013005576A MX351488B (es) 2013-05-17 2013-05-17 Estructura antirreflejante cuasi-omnidireccional basada en multicapas dieléctricas de silicio poroso para la región ultravioleta media, visible e infrarroja cercana al espectro electromagnético.

Publications (2)

Publication Number Publication Date
WO2014185767A2 WO2014185767A2 (es) 2014-11-20
WO2014185767A3 true WO2014185767A3 (es) 2015-09-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/MX2014/000071 WO2014185767A2 (es) 2013-05-17 2014-05-16 Estructura antireflejante cuasi-omnidireccional basada en multicapas dieléctricas de silicio poroso para la región ultravioleta media, visible e infrarroja cercana del espectro electromagnético

Country Status (2)

Country Link
MX (1) MX351488B (es)
WO (1) WO2014185767A2 (es)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5696629A (en) * 1993-06-14 1997-12-09 Forschungszentrum Julich Gmbh Optical component comprising layers of porous silicon
US20110019277A1 (en) * 2007-11-08 2011-01-27 Sager Brian M anti-reflective coating
US7903338B1 (en) * 2006-07-08 2011-03-08 Cirrex Systems Llc Method and system for managing light at an optical interface
US20130087194A1 (en) * 2010-08-02 2013-04-11 Gwangju Institute Of Science And Technology Silicon multilayer anti-reflective film with gradually varying refractive index and manufacturing method therefor, and solar cell having same and manufacturing method therefor

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5696629A (en) * 1993-06-14 1997-12-09 Forschungszentrum Julich Gmbh Optical component comprising layers of porous silicon
US7903338B1 (en) * 2006-07-08 2011-03-08 Cirrex Systems Llc Method and system for managing light at an optical interface
US20110019277A1 (en) * 2007-11-08 2011-01-27 Sager Brian M anti-reflective coating
US20130087194A1 (en) * 2010-08-02 2013-04-11 Gwangju Institute Of Science And Technology Silicon multilayer anti-reflective film with gradually varying refractive index and manufacturing method therefor, and solar cell having same and manufacturing method therefor

Also Published As

Publication number Publication date
MX2013005576A (es) 2014-11-17
WO2014185767A2 (es) 2014-11-20
MX351488B (es) 2017-06-30

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