JPH1045874A - Resin composition for sealing of semiconductor - Google Patents
Resin composition for sealing of semiconductorInfo
- Publication number
- JPH1045874A JPH1045874A JP20173896A JP20173896A JPH1045874A JP H1045874 A JPH1045874 A JP H1045874A JP 20173896 A JP20173896 A JP 20173896A JP 20173896 A JP20173896 A JP 20173896A JP H1045874 A JPH1045874 A JP H1045874A
- Authority
- JP
- Japan
- Prior art keywords
- resin composition
- resin
- weight
- formula
- epoxy resin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Compositions Of Macromolecular Compounds (AREA)
- Epoxy Resins (AREA)
- Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)
Abstract
Description
【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION
【０００１】[0001]
【発明の属する技術分野】本発明は、流動性に優れ、こ
れを用いて封止した半導体デバイスの反りが小さく、特
にＱＦＰやボール・グリッド・アレイ（以下、ＢＧＡと
いう）用に最適の半導体封止用樹脂組成物に関するもの
である。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device which is excellent in fluidity and has a small warpage in a semiconductor device sealed using the semiconductor device, and is particularly suitable for a QFP or a ball grid array (hereinafter referred to as BGA). The present invention relates to a stopping resin composition.
【０００２】[0002]
【従来の技術】ＩＣ本体を機械的、化学的作用から保護
するために、半導体封止用樹脂組成物（以下、樹脂組成
物という）が開発、生産されてきた。半導体デバイスが
進歩するに従い、樹脂組成物に対する要求特性は変化し
つつある。半導体デバイスの中でも、マイクロプロセッ
サに代表されるロジックＩＣは、非常な勢いで進歩しつ
つあり、それに適用されるパッケージに関しても、従来
のＱＦＰに加えて、ＢＧＡのような特殊な構造のものが
注目されている。これらの大型、薄型、多ピン、及びハ
イパワーのパッケージにおいては、樹脂組成物に対す
る、従来の要求特性に加えて、以下の要求特性がクロー
ズアップされてきている。 大型、薄型のパッケージは反り易いため、反りを低減で
きる樹脂組成物 大型、薄型、多ピン化のため、流動性の高い樹脂組成物 ハイパワー化のため、高温になり易いので、熱安定性に
優れた樹脂組成物 しかし、現在までこれらの問題を解決できる樹脂組成物
は得られていない。2. Description of the Related Art In order to protect an IC body from mechanical and chemical actions, a resin composition for encapsulating a semiconductor (hereinafter referred to as a resin composition) has been developed and manufactured. As semiconductor devices advance, required properties for resin compositions are changing. Among semiconductor devices, logic ICs represented by microprocessors are advancing at a very rapid pace. Regarding packages applied to them, in addition to conventional QFPs, special structures such as BGAs have attracted attention. Have been. In these large-sized, thin, multi-pin, and high-power packages, in addition to the conventional required characteristics for the resin composition, the following required characteristics have been highlighted. Resin composition that can reduce warpage because large and thin packages are easy to warp.Resin composition with high fluidity for large, thin, multi-pin, high temperature. Excellent resin composition However, a resin composition that can solve these problems has not been obtained to date.
【０００３】[0003]
【発明が解決しようとする課題】本発明は、流動性に優
れ、これを用いて封止した半導体デバイスは、反り特
性、更に高温保管特性に優れた樹脂組成物を提供するも
のである。SUMMARY OF THE INVENTION An object of the present invention is to provide a resin composition having excellent fluidity, and a semiconductor device encapsulated by using the resin composition, which is excellent in warpage characteristics and high-temperature storage characteristics.
【０００４】[0004]
【課題を解決するための手段】本発明は、（Ａ）下記式
（１）〜（３）の内から選ばれる１種以上のエポキシ樹
脂、（Ｂ）下記式（４）及び／又は式（５）のフェノー
ル樹脂硬化剤、（Ｃ）下記式（６）〜（８）の内から選
ばれる１種以上の硬化促進剤、及び（Ｄ）無機充填材か
らなり、全樹脂組成物中に硬化促進剤（Ｃ）を０．０５
〜１．０重量％含むことを特徴とする半導体封止用樹脂
組成物である。The present invention provides (A) one or more epoxy resins selected from the following formulas (1) to (3), (B) the following formulas (4) and / or ( 5) a phenolic resin curing agent, (C) one or more curing accelerators selected from the following formulas (6) to (8), and (D) an inorganic filler, cured in the entire resin composition. 0.05% of accelerator (C)
It is a resin composition for semiconductor encapsulation characterized by containing about 1.0% by weight.
【化４】 Embedded image
【０００５】[0005]
【化５】 Embedded image
【０００６】[0006]
【化６】 Embedded image
【０００７】[0007]
【発明の実施の形態】本発明で用いられるエポキシ樹脂
は、式（１）に示されるトリフェノールメタン型エポキ
シ樹脂、式（２）、式（３）に示されるナフタレン型エ
ポキシ樹脂であり、単独でも混合して用いてもよい。ト
リフェノールメタン型のエポキシ樹脂は、主鎖が剛直で
屈曲性がないので成形品のガラス転移点（以下、Ｔgと
いう）が高くなる。又、ナフタレン型のエポキシ樹脂
は、分子同士が重なっており分子運動が抑制され、成形
品のＴgが高くなる。成形品のＴgが高くなると、大型、
薄型パッケージにおいては、反りが大幅に低減し、熱安
定性も大幅に改善される。従って、式（１）〜（３）の
エポキシ樹脂を樹脂組成物に適用することによって、反
りと耐熱性の問題が改善される。式（１）中の官能基Ｒ
1は、水素、メチル基、又はターシャリ−ブチル基であ
り、これらは同一でも異なっていてもよい。式（１）、
式（３）のｎは、１≦ｎ≦２０で、より好ましくは１≦
ｎ≦１０であり、２０を越えると成形時の流動性が劣
る。これらのエポキシ樹脂の平均分子量、エポキシ当量
は特に限定しないが、信頼性向上のため、イオン性不純
物は極力少ないことが望ましい。更に、式（１）〜
（３）以外のエポキシ樹脂を、全エポキシ樹脂中に、５
０重量％未満使用してもよい。しかし、５０重量％を越
えると、Ｔgが低下し、反り特性と高温保管特性が低下
するので望ましくない。併用されるエポキシ樹脂として
は、特に限定しないが、例えば、オルソクレゾールノボ
ラック型エポキシ樹脂、ビフェニル型エポキシ樹脂、ジ
シクロペンタジエン型エポキシ樹脂、ビスフェノールＡ
型エポキシ樹脂、ビスフェノールＦ型エポキシ樹脂、ス
チルベン型エポキシ樹脂、その他シリコーン変性エポキ
シ樹脂等が挙げられる。DESCRIPTION OF THE PREFERRED EMBODIMENTS The epoxy resin used in the present invention is a triphenolmethane type epoxy resin represented by the formula (1) and a naphthalene type epoxy resin represented by the formulas (2) and (3). However, they may be used as a mixture. The triphenolmethane-type epoxy resin has a rigid main chain and no flexibility, so that the glass transition point (hereinafter, referred to as Tg) of the molded product is high. In addition, in the naphthalene type epoxy resin, molecules are overlapped with each other, molecular movement is suppressed, and the Tg of a molded product is increased. When the Tg of the molded product increases,
In a thin package, warpage is greatly reduced and thermal stability is greatly improved. Therefore, by applying the epoxy resins of the formulas (1) to (3) to the resin composition, the problems of warpage and heat resistance are improved. Functional group R in formula (1)
1 is hydrogen, a methyl group, or a tertiary-butyl group, which may be the same or different. Equation (1),
N in the formula (3) is 1 ≦ n ≦ 20, and more preferably 1 ≦ n ≦ 20.
n ≦ 10, and when it exceeds 20, the fluidity during molding is inferior. The average molecular weight and epoxy equivalent of these epoxy resins are not particularly limited, but it is desirable that ionic impurities be as small as possible for improving reliability. Further, formulas (1) to
Epoxy resin other than (3) is added to all epoxy resins.
Less than 0% by weight may be used. However, if it exceeds 50% by weight, Tg is lowered, and the warpage characteristics and the high-temperature storage characteristics are deteriorated. The epoxy resin used in combination is not particularly limited. For example, orthocresol novolak epoxy resin, biphenyl epoxy resin, dicyclopentadiene epoxy resin, bisphenol A
Type epoxy resin, bisphenol F type epoxy resin, stilbene type epoxy resin, and other silicone-modified epoxy resins.
【０００８】本発明で用いられるフェノール樹脂硬化剤
は、式（４）に示されるトリフェノールメタン型フェノ
ールノボラック樹脂、式（５）に示されるナフタレン型
フェノール樹脂であり、これらは単独でも混合して用い
てもよい。エポキシ樹脂と同様に、トリフェノールメタ
ン型やナフタレン型の主鎖をもつフェノール樹脂硬化剤
は、高いＴgを有する成形品を得ることができる。式
（４）中の官能基Ｒ2は、水素、メチル基、又はメトキ
シ基であり、これらは同一でも異なっていてもよい。式
（４）、式（５）のｎは、１≦ｎ≦２０で、より好まし
くは１≦ｎ≦１０であり、２０を越えると成形時の流動
性が劣る。これらのフェノール樹脂硬化剤の分子量、水
酸基当量は特に限定されないが、信頼性向上のため、イ
オン性不純物は極力少ないことが望ましい。更に、式
（４）、式（５）以外のフェノール樹脂硬化剤を、全フ
ェノール樹脂硬化剤中に、５０重量％未満使用してもよ
い。しかし、５０重量％を越えると、Ｔgが低下し、反
り特性と高温保管特性が低下するので望ましくない。併
用されるフェノール樹脂硬化剤としては特に限定しない
が、例えば、フェノールノボラック樹脂、パラキシリレ
ン変性フェノール樹脂、ジシクロペンタジエン変性フェ
ノール樹脂、ビスフェノールＡ型樹脂、ビスフェノール
Ｆ型樹脂、そしてこれらのシリコーン変性フェノール樹
脂等が挙げられる。エポキシ樹脂やフェノール樹脂硬化
剤の添加量は、特に限定しないが、エポキシ樹脂とフェ
ノール樹脂硬化剤の合計量は、全樹脂組成物中に、５〜
３０重量％が好ましい。５重量％未満だと流動性が得ら
れず、３０重量％を越えると耐湿信頼性が劣る。The phenolic resin curing agent used in the present invention is a triphenolmethane-type phenol novolak resin represented by the formula (4) and a naphthalene-type phenolic resin represented by the formula (5). May be used. Similarly to the epoxy resin, a phenolic resin curing agent having a triphenolmethane-type or naphthalene-type main chain can obtain a molded article having a high Tg. The functional group R 2 in the formula (4) is a hydrogen, a methyl group, or a methoxy group, which may be the same or different. In the formulas (4) and (5), n satisfies 1 ≦ n ≦ 20, and more preferably 1 ≦ n ≦ 10. When n exceeds 20, the fluidity during molding is poor. The molecular weight and hydroxyl equivalent of these phenolic resin curing agents are not particularly limited, but it is desirable that ionic impurities be as small as possible for improving reliability. Further, a phenolic resin curing agent other than the formulas (4) and (5) may be used in less than 50% by weight in all the phenolic resin curing agents. However, if it exceeds 50% by weight, Tg is lowered, and the warpage characteristics and the high-temperature storage characteristics are deteriorated. The phenol resin curing agent to be used in combination is not particularly limited, and examples thereof include phenol novolak resin, paraxylylene-modified phenol resin, dicyclopentadiene-modified phenol resin, bisphenol A-type resin, bisphenol F-type resin, and silicone-modified phenol resins thereof. Is mentioned. The amount of the epoxy resin or the phenolic resin curing agent is not particularly limited, but the total amount of the epoxy resin and the phenolic resin curing agent is 5 to 5 parts in the total resin composition.
30% by weight is preferred. If it is less than 5% by weight, fluidity cannot be obtained, and if it exceeds 30% by weight, the moisture resistance reliability is poor.
【０００９】本発明で用いられる硬化促進剤は、式
（６）〜（８）に示されるテトラフェニルホスホニウム
・テトラ有機酸ボレート塩であり、これらは単独でも混
合して用いてもよい。式（６）〜（８）の硬化促進剤
は、エポキシ基／水酸基の硬化反応の触媒作用におい
て、大きな温度依存性を有することが特徴であり、触媒
活性点であるリン原子の非共有電子対に高温を印加され
ない限り触媒活性が発現しないので、低温では触媒活性
が低く、高温では触媒活性が高い。従って、樹脂組成物
の混練時の温度（１００℃前後）では、エポキシ基／水
酸基の反応は起こらない。そのため、流動性に優れた低
粘度の樹脂組成物を得ることができるので、大型、薄型
のパッケージにも問題なく充填できる。一方、成形時
（１７５℃程度）には素早く硬化反応が起こるので、優
れた成形性を示す。式（６）中のＲ3、式（７）中の
Ｒ4、及び式（８）中のＲ5は、前記した通りである。更
に、式（６）〜（８）以外の硬化促進剤を、全硬化促進
剤中に、８０重量％未満使用してもよい。しかし、８０
重量％を越えると、流動特性が低下するので望ましくな
い。なお、併用される硬化促進剤は、エポキシ基／水酸
基の反応を促進させるものであればよく、特に限定しな
いが、例えば、トリフェニルホスフィン、テトラフェニ
ルホスホニウム・テトラボレート塩、トリフェニルホス
ホニウム・トリハイドロボレート、１，８−ジアザビシ
クロ（５，４，０）ウンデセン−７等が挙げられる。硬
化促進剤の添加量は、全樹脂組成物中に、０．０５〜
１．０重量％が好ましい。０．０５重量％未満だと硬化
が遅く、良好な成形品が得られない。１．０重量％を越
えると硬化が速すぎ、同様に良好な成形品が得られな
い。The curing accelerator used in the present invention is a tetraphenylphosphonium tetraorganic acid borate salt represented by the formulas (6) to (8), and these may be used alone or in combination. The curing accelerators of formulas (6) to (8) are characterized by having a large temperature dependence in the catalysis of the curing reaction of the epoxy group / hydroxyl group, and the lone pair of the phosphorus atom which is the catalytically active site. Since no catalytic activity is exhibited unless a high temperature is applied to the catalyst, the catalytic activity is low at low temperatures and high at high temperatures. Therefore, at the temperature at which the resin composition is kneaded (around 100 ° C.), the reaction of epoxy group / hydroxyl group does not occur. Therefore, a low-viscosity resin composition having excellent fluidity can be obtained, so that a large-sized and thin package can be filled without any problem. On the other hand, at the time of molding (about 175 ° C.), a rapid curing reaction occurs, so that excellent moldability is exhibited. R 3 in the formula (6), R 4 in the formula (7), and R 5 in the formula (8) is as described above. Further, a curing accelerator other than the formulas (6) to (8) may be used in less than 80% by weight in the total curing accelerator. But 80
Exceeding the weight percentage is undesirable because the flow characteristics deteriorate. The curing accelerator used in combination is not particularly limited as long as it accelerates the reaction of the epoxy group / hydroxyl group. Borate, 1,8-diazabicyclo (5,4,0) undecene-7 and the like. The addition amount of the curing accelerator is 0.05 to
1.0% by weight is preferred. If it is less than 0.05% by weight, curing is slow, and a good molded product cannot be obtained. If it exceeds 1.0% by weight, curing is too fast, and similarly good molded articles cannot be obtained.
【００１０】本発明で用いられる無機充填材は、特に限
定しないが、例えば、溶融シリカ粉末、球状シリカ粉
末、結晶シリカ粉末、２次凝集シリカ粉末、アルミナ等
が挙げられる。特に、コスト、信頼性、及び流動性の点
から、球状溶融シリカ粉末が好ましい。なお、この無機
充填材は、シランカップリング剤や、チタネートカップ
リング剤、その他の表面処理剤によって予め表面処理さ
れていてもよい。又、平均粒径、最大粒径、粒度分布、
比表面積に関しても特に制限はない。又、耐湿信頼性向
上のため、イオン性不純物は極力少ないことが望まし
い。本発明における無機充填材の配合量は、全樹脂組成
物中に、６５〜９３重量％が好ましい。The inorganic filler used in the present invention is not particularly restricted but includes, for example, fused silica powder, spherical silica powder, crystalline silica powder, secondary aggregated silica powder, alumina and the like. In particular, spherical fused silica powder is preferable in terms of cost, reliability, and fluidity. The inorganic filler may be previously surface-treated with a silane coupling agent, a titanate coupling agent, or another surface treatment agent. Also, average particle size, maximum particle size, particle size distribution,
There is no particular limitation on the specific surface area. In order to improve the moisture resistance reliability, it is desirable that ionic impurities be as small as possible. The compounding amount of the inorganic filler in the present invention is preferably 65 to 93% by weight in the whole resin composition.
【００１１】本発明の樹脂組成物は、（Ａ）〜（Ｄ）成
分の他、必要に応じて、カーボンブラック等の着色剤、
臭素化エポキシ樹脂、三酸化アンチモン等の難燃剤、シ
リコーンオイル、シリコーンゴム、各種ゴム成分等の低
応力成分、シランカップリング剤等を添加することがで
きる。本発明の樹脂組成物は、（Ａ）〜（Ｄ）成分、そ
の他の添加剤等をミキサーで常温混合し、ロール、押し
出し機等の一般混練機を用いて混練し、冷却後粉砕し成
形材料とすることができる。The resin composition of the present invention may further comprise, if necessary, a coloring agent such as carbon black in addition to the components (A) to (D).
Flame retardants such as brominated epoxy resins and antimony trioxide, low-stress components such as silicone oil, silicone rubber and various rubber components, and silane coupling agents can be added. The resin composition of the present invention is obtained by mixing the components (A) to (D), other additives, and the like at room temperature with a mixer, kneading the mixture with a general kneading machine such as a roll or an extruder, pulverizing after cooling, and molding. It can be.
【００１２】[0012]
実施例１ エポキシ樹脂（Ｅ−１） １０．６０重量部 Example 1 10.60 parts by weight of epoxy resin (E-1)
【化７】 Embedded image
【００１３】 フェノール樹脂硬化剤（Ｈ−１） ６．１０重量部[0013] 6.10 parts by weight of phenolic resin curing agent (H-1)
【化８】 Embedded image
【００１４】 硬化促進剤（Ｃ−１） ０．５０重量部Curing accelerator (C-1) 0.50 parts by weight
【化９】 Embedded image
【００１５】 球状溶融シリカ（平均粒径１５μｍ） ７９．７０重量部 カーボンブラック ０．３０重量部 臭素化フェノールノボラック型エポキシ樹脂 １．００重量部 三酸化アンチモン １．００重量部 エポキシシランカップリング剤 ０．５０重量部 カルナバワックス ０．３０重量部 を、ミキサーで常温混合し、１００℃で二軸ロールを用
いて混練し、冷却後粉砕し成形材料とした。得られた成
形材料の反り特性、高化式粘度、及び高温保管特性を評
価した。Spherical fused silica (average particle size: 15 μm) 79.70 parts by weight Carbon black 0.30 parts by weight Brominated phenol novolak type epoxy resin 1.00 parts by weight Antimony trioxide 1.00 parts by weight Epoxysilane coupling agent 0 0.50 parts by weight of carnauba wax was mixed at room temperature with a mixer, kneaded at 100 ° C. using a biaxial roll, cooled and pulverized to obtain a molding material. The obtained molding material was evaluated for its warpage properties, high-viscosity viscosity, and high-temperature storage properties.
【００１６】評価方法 高化式粘度：フローテスター（（株）島津製作所・製Ｃ
ＦＴ−５００）を用いて、１７５℃、圧力１０kgｆ／cm
2、キャピラリー径０．５mmで測定した。単位はポイ
ズ。 反り特性：ビスマレイミド・トリアジン（ガラス基板）
積層板１と前記成形材料を１７５℃、２分間で一体成形
し、図１に示す形状の成形品を得、１７５℃、８時間の
ポストキュアを行った後、常温に戻し、図２に示す要領
で、反り量（mm）を測定した。 高温保管特性：リードフレームにＩＣチップをマウント
し、金線をボンディングした後に、ＤＩＰパッケージを
成形した。得られた成形品をポストキュアした。その
後、１８５℃で１０００時間処理し、内部のＩＣチップ
の電気抵抗を測定した。通常０．６Ωである電気抵抗の
回路が、劣化して電気抵抗１Ω以上となった場合を不良
と見なし、８パッケージ中の不良個数を測定した。結果
を表１に示す。Evaluation method High-viscosity viscosity: Flow tester (C, manufactured by Shimadzu Corporation)
FT-500), 175 ° C, pressure 10 kgf / cm
2. Measured with a capillary diameter of 0.5 mm. The unit is poise. Warpage characteristics: bismaleimide / triazine (glass substrate)
The laminated plate 1 and the molding material were integrally molded at 175 ° C. for 2 minutes to obtain a molded article having the shape shown in FIG. 1, and after post-curing at 175 ° C. for 8 hours, the temperature was returned to room temperature, and FIG. The amount of warpage (mm) was measured in the same manner. High-temperature storage characteristics: After mounting an IC chip on a lead frame and bonding a gold wire, a DIP package was formed. The obtained molded article was post-cured. Thereafter, the substrate was treated at 185 ° C. for 1000 hours, and the electric resistance of the internal IC chip was measured. When the circuit having an electrical resistance of 0.6 Ω was deteriorated to have an electrical resistance of 1 Ω or more, it was regarded as a defect, and the number of defects in eight packages was measured. Table 1 shows the results.
【００１７】実施例２〜９ 表１の処方に従って配合し、実施例１と同様にして成形
材料を得、同様に評価した。実施例６で用いたエポキシ
樹脂は、式（３）でｎ＝１．９のものである。結果を表
１に示す。 比較例１〜４ 表２の処方に従って配合し、実施例１と同様にして成形
材料を得、同様に評価した。結果を表２に示す。実施
例、比較例で用いた各成分の構造について、下記に示
す。Examples 2 to 9 Compounded according to the formulation shown in Table 1, a molding material was obtained in the same manner as in Example 1, and evaluated in the same manner. The epoxy resin used in Example 6 has the formula (3) and n = 1.9. Table 1 shows the results. Comparative Examples 1 to 4 The components were blended according to the formulation shown in Table 2, and a molding material was obtained in the same manner as in Example 1 and evaluated in the same manner. Table 2 shows the results. The structure of each component used in Examples and Comparative Examples is shown below.
【化１０】 Embedded image
【００１８】[0018]
【化１１】 Embedded image
【００１９】[0019]
【化１２】 Embedded image
【００２０】[0020]
【表１】 [Table 1]
【００２１】[0021]
【表２】 [Table 2]
【００２２】[0022]
【発明の効果】本発明の樹脂組成物は、流動性に優れ、
これを用いることにより、反り特性及び高温保管特性に
優れた半導体装置を得ることができる。The resin composition of the present invention has excellent fluidity,
By using this, a semiconductor device having excellent warpage characteristics and high-temperature storage characteristics can be obtained.
【図１】 積層板と成形材料を一体成形した成形品の模
式図。FIG. 1 is a schematic diagram of a molded product obtained by integrally molding a laminate and a molding material.
【図２】 一体成形品の反り量を示す模式図。FIG. 2 is a schematic view showing the amount of warpage of an integrally molded product.
【符号の説明】 １ 積層板 ２ 硬化物 ａ １２６．０mm、ｂ １０．０mm、ｃ ０．８mm、ｄ
０．４ｍｍ[Description of Signs] 1 Laminated plate 2 Cured product a 126.0 mm, b 10.0 mm, c 0.8 mm, d
0.4mm
───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 庁内整理番号 ＦＩ 技術表示箇所 Ｈ０１Ｌ 23/29 Ｈ０１Ｌ 23/30 Ｒ 23/31 ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 6 Identification number Agency reference number FI Technical display location H01L 23/29 H01L 23/30 R 23/31
Claims (1)
ばれる１種以上のエポキシ樹脂、（Ｂ）下記式（４）及
び／又は式（５）のフェノール樹脂硬化剤、（Ｃ）下記
式（６）〜（８）の内から選ばれる１種以上の硬化促進
剤、及び（Ｄ）無機充填材からなり、全樹脂組成物中に
硬化促進剤（Ｃ）を０．０５〜１．０重量％含むことを
特徴とする半導体封止用樹脂組成物。 【化１】 【化２】 【化３】 (A) one or more epoxy resins selected from the following formulas (1) to (3), (B) a phenol resin curing agent of the following formula (4) and / or (5), (C) One or more curing accelerators selected from the following formulas (6) to (8), and (D) an inorganic filler. A resin composition for encapsulating a semiconductor, comprising from 0.5 to 1.0% by weight. Embedded image Embedded image Embedded image
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20173896A JP3672386B2 (en) | 1996-07-31 | 1996-07-31 | Resin composition for semiconductor encapsulation |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20173896A JP3672386B2 (en) | 1996-07-31 | 1996-07-31 | Resin composition for semiconductor encapsulation |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH1045874A true JPH1045874A (en) | 1998-02-17 |
| JP3672386B2 JP3672386B2 (en) | 2005-07-20 |
Family
ID=16446126
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20173896A Expired - Fee Related JP3672386B2 (en) | 1996-07-31 | 1996-07-31 | Resin composition for semiconductor encapsulation |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3672386B2 (en) |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004067717A (en) * | 2002-08-01 | 2004-03-04 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP2006518800A (en) * | 2003-02-20 | 2006-08-17 | ヘンケル コーポレイション | Quaternary organic phosphonium salt-containing molding composition |
| JP2006299249A (en) * | 2005-03-24 | 2006-11-02 | Shin Etsu Chem Co Ltd | Epoxy resin composition and semiconductor device |
| JP2007204511A (en) * | 2006-01-31 | 2007-08-16 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing semiconductor, and semiconductor device |
| JP2013087137A (en) * | 2011-10-13 | 2013-05-13 | Panasonic Corp | Epoxy resin composition for sealing semiconductor and manufacturing method for the same, and semiconductor device |
-
1996
- 1996-07-31 JP JP20173896A patent/JP3672386B2/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004067717A (en) * | 2002-08-01 | 2004-03-04 | Sumitomo Bakelite Co Ltd | Epoxy resin composition and semiconductor device |
| JP2006518800A (en) * | 2003-02-20 | 2006-08-17 | ヘンケル コーポレイション | Quaternary organic phosphonium salt-containing molding composition |
| JP2006299249A (en) * | 2005-03-24 | 2006-11-02 | Shin Etsu Chem Co Ltd | Epoxy resin composition and semiconductor device |
| JP2007204511A (en) * | 2006-01-31 | 2007-08-16 | Sumitomo Bakelite Co Ltd | Epoxy resin composition for sealing semiconductor, and semiconductor device |
| JP2013087137A (en) * | 2011-10-13 | 2013-05-13 | Panasonic Corp | Epoxy resin composition for sealing semiconductor and manufacturing method for the same, and semiconductor device |
Also Published As
| Publication number | Publication date |
|---|---|
| JP3672386B2 (en) | 2005-07-20 |
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