JP2006299249A - Epoxy resin composition and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an epoxy resin composition good in fluidity and giving a cured product that has low coefficient of linear expansion, exhibits low hygroscopicity despite having high glass transition temperature and is also excellent in lead-free soldering crack resistance. <P>SOLUTION: The epoxy resin composition essentially comprises (A) an epoxy resin 175-210 in epoxy equivalent, containing (a) an epoxy resin having in one molecule at least one (substituted) naphthalene ring, (B) a phenolic resin having in one molecule at least one (substituted) naphthalene ring and (C) an inorganic filler. In this composition, the (substituted) naphthalene ring in the epoxy resin(a) is contained at 45-60 mass% in the total content of the epoxy resin(A). <P>COPYRIGHT: (C)2007,JPO&INPIT

Description

  The present invention is an epoxy resin suitable for semiconductor encapsulation, which has good fluidity, a low coefficient of linear expansion, a high glass transition temperature, a low hygroscopic property, and an excellent lead-free solder cracking property. The present invention relates to a semiconductor device sealed with a composition and a cured product of the resin composition.

  Conventionally, resin-encapsulated diodes, transistors, ICs, LSIs, and super LSIs have been the mainstream of semiconductor devices, but epoxy resins are more formable, adhesive, electrical, mechanical, and more than other thermosetting resins. Since it has excellent moisture resistance and the like, it is common to seal a semiconductor device with an epoxy resin composition. However, in recent years, with the progress of miniaturization, weight reduction, and high performance of electronic devices, higher integration of semiconductor elements has progressed, and semiconductor device mounting technology has been promoted. The requirements for epoxy resins used as encapsulants are becoming increasingly severe, including lead-free.

  For example, ball grid arrays (BGA) and QFN, which are excellent in high-density packaging, are becoming mainstream in recent years for ICs and LSIs, but since this package seals only one side, warping after molding has become a major problem. . Conventionally, one method for improving warpage has been to increase the crosslink density of the resin and increase the glass transition temperature, but due to the rise in solder temperature due to lead-free, the elastic modulus at high temperature is high, and moisture absorption Due to its high properties, peeling at the interface between the cured epoxy resin and the substrate after solder reflow and peeling at the interface between the semiconductor element and the semiconductor resin paste are problematic. On the other hand, by using a resin with low crosslink density to increase the inorganic filler, it is possible to improve the low water absorption, low expansion coefficient, and low elastic modulus at high temperature, which is expected to have an effect on reflow resistance. However, since the viscosity is increased, the fluidity at the time of molding is impaired.

  In Japanese Patent No. 3137202 (Patent Document 1), in an epoxy resin composition comprising an epoxy resin and a curing agent, 1,1-bis (2,7-diglycidyloxy-1-naphthyl) alkane is used as the epoxy resin. An epoxy resin composition characterized by being used is disclosed. This epoxy resin cured product is extremely excellent in heat resistance and moisture resistance, and is said to overcome the hard and brittle defect generally possessed by cured products of high heat resistant epoxy resins.

  Further, JP-A-2005-15689 (Patent Document 2) discloses 1,1-bis (2,7-diglycidyloxy-1-naphthyl) alkane (a1) and 1- (2,7-diglycidyloxy). Epoxy resin (A) containing -1-naphthyl) -1- (2-glycidyloxy-1-naphthyl) alkane (a2) and 1,1-bis (2-glycidyloxy-1-naphthyl) alkane (a3) And a curing agent (B) as an essential component, and 40 to 95 parts by weight of (a3) is contained in 100 parts by weight of the total of (a1), (a2) and (a3). An epoxy resin composition characterized by the above is disclosed. That is, it is stated that 40 to 95 parts by mass of m = 0 and n = 0 in the above general formula (1) is preferable because of lowering of fluidity and curability.

In addition, as a well-known document relevant to this invention, there exist the following.
Japanese Patent No. 3137202 JP 2005-15689 A

  In view of the above-mentioned problems of the prior art, the present invention provides an epoxy resin that is excellent in continuous moldability and provides a cured product with excellent crack resistance during soldering even when the surface mounting package sealing resin portion absorbs moisture. An object is to provide a semiconductor device sealed with a composition and a cured product of the resin composition.

  As a result of intensive studies to achieve the above object, the present inventors have combined the following specific epoxy resins and specific phenol resins, particularly the epoxy resins of the general formulas (1) and (2) and the phenol resin. It is suitable for semiconductor encapsulation that has good fluidity, low linear expansion coefficient, low moisture absorption while having high glass transition temperature, and gives a cured product with excellent solder crack resistance. The present inventors have found that an epoxy resin composition can be obtained, and have made the present invention.

Therefore, the present invention
(A) an epoxy resin containing an epoxy resin (a) having an epoxy equivalent in the range of 175 to 210 and having at least one substituted or unsubstituted naphthalene ring in one molecule;
(B) a phenol resin having at least one substituted or unsubstituted naphthalene ring in one molecule;
(C) inorganic filler,
And an epoxy resin composition characterized by containing 45 to 60% by mass of a substituted or unsubstituted naphthalene ring of the epoxy resin (a) in the total content of the epoxy resin (A). provide.

（ｍ、ｎは０又は１、Ｒは水素原子、炭素数１〜４のアルキル基、又はフェニル基、Ｇはグリシジル基含有有機基であるが、但し、上記一般式（１）１００質量部中にｍ＝０及びｎ＝０のものを３５〜８５質量部、ｍ＝１及びｎ＝１のものを１〜３５質量部含有する。） In this case, the component (a) is preferably a naphthalene type epoxy resin represented by the following general formula (1).

(M and n are 0 or 1, R is a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group, and G is a glycidyl group-containing organic group, provided that in general formula (1) 100 parts by mass 35 to 85 parts by mass of m = 0 and n = 0, and 1 to 35 parts by mass of m = 1 and n = 1.)

  Moreover, it is preferable that (B) component contains the phenol resin (b) shown by following General formula (2).

（Ｒ¹，Ｒ²はそれぞれ独立して水素原子、炭素数１〜４のアルキル基、又はフェニル基を示し、ｎは、０〜１０の整数である。）
本発明は、また上記エポキシ樹脂組成物の硬化物で封止された半導体装置を提供する。好ましくは、樹脂基板又は金属基板の片面に半導体素子が搭載され、この半導体素子が搭載された樹脂基板面又は金属基板面側の実質的に片面のみが封止されている半導体装置を提供する。

(R ¹ and R ² each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group, and n is an integer of 0 to 10)
The present invention also provides a semiconductor device encapsulated with a cured product of the above epoxy resin composition. Preferably, a semiconductor device is provided in which a semiconductor element is mounted on one surface of a resin substrate or a metal substrate, and substantially only one surface on the resin substrate surface or metal substrate surface side on which the semiconductor element is mounted is sealed.

  The epoxy resin composition of the present invention has a good fluidity, a low coefficient of linear expansion, a low hygroscopicity while having a high glass transition temperature, and gives a cured product excellent in lead-free solder cracking properties. Is. Therefore, the semiconductor device sealed with the cured product of the epoxy resin composition for semiconductor sealing of the present invention is particularly useful in industry.

Hereinafter, the present invention will be described in more detail.
[(A) Epoxy resin]
The epoxy resin (A) used in the present invention contains an epoxy resin (a) having an epoxy equivalent in the range of 175 to 210 and containing at least one substituted or unsubstituted naphthalene ring. In the content, it is necessary to contain 45 to 60% by mass of a substituted or unsubstituted naphthalene ring. Although having a high glass transition temperature by having a naphthalene ring, it exhibits low hygroscopicity, but if the epoxy equivalent is less than 175, the crosslinking density is excessively increased, the viscosity is increased, and the fluidity is lowered. On the other hand, when the epoxy equivalent exceeds 210, the crosslinking density is extremely lowered, and the curability and the glass transition temperature are lowered. Furthermore, in order to obtain excellent curability, heat resistance, low hygroscopicity, low linear expansion, and high temperature and low elasticity, the naphthalene ring content of the component (a) in the total content of the epoxy resin is 45-60. It is necessary to be mass%. If it is less than 45% by mass, sufficient heat resistance and low hygroscopicity cannot be obtained. On the other hand, if it exceeds 60% by mass, the fluidity is lowered due to thickening, and the high-temperature elastic modulus is increased, which is not preferable.

In this case, the naphthalene ring-containing epoxy resin is preferably a naphthalene type epoxy resin of the above general formula (1), and 35 to 85 masses of m = 0, n = 0 in 100 parts by mass of the general formula (1). Parts, m = 1, and n = 1, when 1 to 35 parts by mass are contained, satisfactory characteristics can be satisfied.
When the content of m = 0, n = 0 in the total 100 parts by mass of the general formula (1) is less than 35 parts by mass, the viscosity of the resin composition is increased and the fluidity is lowered, and 85 parts by mass. If it exceeds the part, the crosslinking density of the resin composition is extremely lowered, so that the curability is lowered and the glass transition temperature is lowered, which is not preferable. When m = 1 and n = 1 exceeds 35 parts by mass, the crosslinking density increases and the glass transition temperature increases, but the elastic modulus at high temperatures also increases, which is not preferable. Further, from the viewpoint of excellent curability, heat resistance, and high temperature elastic modulus of the resulting epoxy resin composition, the content of m = 0, n = 0 is 45 to 70 parts by mass, m = 1, n = 1 It is preferable that content is 5-30 mass parts. The remainder is m = 0, n = 1 or m = 1, n = 0.

  Specific examples of such epoxy resins include the following.

（但し、Ｒ、Ｇは上記した通りである。）

(However, R and G are as described above.)

  Specific examples of R include a hydrogen atom, an alkyl group such as a methyl group, an ethyl group, and a propyl group, or a phenyl group, and the G glycidyl group-containing organic group is specifically represented by the following formula. Groups and the like.

  Japanese Patent Application Laid-Open No. 2005-15689 states that 40 to 95 parts by mass is preferable for m = 0 and n = 0 because of lowering of fluidity and curability. However, the epoxy resin (A) used in the present invention also has a naphthalene structure as described above, but the epoxy equivalent is 175 to 210, the naphthalene ring content is 45 to 60% by mass, and the general formula (1) By defining the content of m = 1 and n = 1, the fluidity is good, the coefficient of linear expansion is small, the glass has a high glass transition temperature, exhibits low hygroscopicity, and is resistant to solder cracks. It was found to be excellent in properties.

  In the present invention, as the epoxy resin component, in addition to the specific naphthalene ring-containing epoxy compound (a), other epoxy resins may be used in combination. Other epoxy resins are not particularly limited, and are conventionally known epoxy resins, for example, novolak epoxy resins such as phenol novolac epoxy resins and cresol novolac epoxy resins, triphenolmethane epoxy resins, and triphenolpropane. Triphenolalkane type epoxy resin such as epoxy resin, biphenyl type epoxy resin, phenol aralkyl type epoxy resin, biphenyl aralkyl type epoxy resin, heterocyclic type epoxy resin, naphthalene ring-containing epoxy resins other than the above, bisphenol A type epoxy resin, Examples include bisphenol type epoxy resins such as bisphenol F type epoxy resins, stilbene type epoxy resins, halogenated epoxy resins, etc., and one or more of these can be used. .

  In this case, the compounding amount of the specific naphthalene ring-containing epoxy resin (a) is 50 to 100% by mass, particularly 70, based on the epoxy resin (the specific naphthalene ring-containing epoxy resin (a) + other epoxy resin). It is desirable that it is -100 mass%. If the amount of the naphthalene ring-containing epoxy resin (a) is less than 50% by mass, sufficient heat resistance, reflow properties, moisture absorption characteristics, and the like may not be obtained.

[(B) Curing agent]
The (B) component phenolic resin of the epoxy resin composition of the present invention functions as a curing agent for the (A) component epoxy resin. In the present invention, a substituted or unsubstituted naphthalene ring is present in one molecule. A phenolic resin having at least one is used. Preferably, it is a phenol resin (b) shown by the following general formula (2).

（Ｒ¹，Ｒ²はそれぞれ独立して水素原子、炭素数１〜４のアルキル基、又はフェニル基を示し、ｎは、０〜１０の整数である。）

(R ¹ and R ² each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group, and n is an integer of 0 to 10)

Examples of R ¹ and R ² include a hydrogen atom, an alkyl group such as a methyl group, an ethyl group, and a propyl group, or a phenyl group.

  By using such a phenol resin having a naphthalene ring as a curing agent, a cured product having a low coefficient of linear expansion, a high glass transition temperature, a low elastic modulus in a temperature range above the glass transition temperature, and a low water absorption. Therefore, when the epoxy resin of the present invention is used as a sealing material for a semiconductor device, the crack resistance during thermal shock is improved, and the warpage of the package is also improved. Specific examples of the phenol resin having a naphthalene ring represented by the general formula (2) include the following compounds (3) to (6) (n is the same as described above).

  In addition, the phenol resin of (B) component of the epoxy resin composition of this invention may use other phenol resins together in addition to the said specific phenol resin (b). The other phenol resin is not particularly limited, and is a conventionally known phenol resin, for example, a novolak type phenol resin such as a phenol novolak resin or a cresol novolak resin, a phenol aralkyl type phenol resin, a biphenyl aralkyl type phenol resin, or a biphenyl. Type phenolic resin, triphenolmethane type phenolic resin, triphenolalkane type phenolic resin such as triphenolpropane type phenolic resin, alicyclic phenolic resin, heterocyclic type phenolic resin, bisphenol A type phenolic resin, bisphenol F type phenolic resin, etc. Bisphenol type phenolic resin and the like, and one or more of them can be used.

  In this case, the compounding amount of the phenol resin (b) of the specific formula (2) is 25 to 100 mass with respect to the phenol resin (the phenol resin (b) of the specific formula (2) + other phenol resin). %, Particularly 40 to 80% by mass. When the blending amount of the naphthalene type phenol resin is less than 25% by mass, sufficient heat resistance, moisture absorption characteristics, warpage characteristics and the like may not be obtained.

  In the present invention, the blending ratio of the epoxy resin of the component (A) and the phenol resin of the component (B) is not particularly limited, but is contained in the curing agent with respect to 1 mol of the epoxy group contained in the epoxy resin. The molar ratio of the phenolic hydroxyl group is preferably in the range of 0.5 to 1.5, particularly 0.8 to 1.2.

[(C) inorganic filler]
What is normally mix | blended with an epoxy resin composition can be used as an inorganic filler of the (C) component mix | blended in the epoxy resin composition of this invention. Examples thereof include silicas such as fused silica and crystalline silica, alumina, silicon nitride, aluminum nitride, boron nitride, titanium oxide, glass fiber, and antimony trioxide. The average particle size and shape of these inorganic fillers and the filling amount of the inorganic filler are not particularly limited, but in order to improve lead-free solder crack resistance and flame retardancy, the moldability should be increased in the epoxy resin composition. It is preferable to fill as much as possible within a range that does not impair.

  In this case, spherical fused silica having an average particle diameter of 3 to 30 μm, particularly 5 to 25 μm is particularly preferable as the average particle diameter and shape of the inorganic filler. Here, the average particle diameter can be obtained as a weight average value (or median diameter), for example, using a particle size distribution measuring device or the like by a laser light diffraction method or the like.

  The filling amount of the inorganic filler is preferably 200 to 1100 parts by weight, particularly 500 to 800 parts by weight with respect to 100 parts by weight of the total amount of the (A) epoxy resin and (B) curing agent (phenol resin). If the amount is less than 200 parts by mass, the warpage of the package increases due to an increase in the expansion coefficient, which may increase the stress applied to the semiconductor element, leading to deterioration of element characteristics, and the amount of resin relative to the entire composition increases. For this reason, the moisture resistance is remarkably lowered and the crack resistance is also lowered. On the other hand, when it exceeds 1100 parts by mass, the viscosity at the time of molding increases, and the moldability may deteriorate. In addition, it is preferable to make this inorganic filler into content of 75-91 mass% of the whole composition, especially 78-89 mass%, and it is more preferable to set it as 83-87 mass%.

The inorganic filler is preferably blended in advance with a surface treatment with a coupling agent such as a silane coupling agent or a titanate coupling agent in order to increase the bond strength with the resin. As this coupling agent, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, γ-isocyanatopropyltriethoxysilane, γ-ureidopropyltriethoxysilane, β- (3,4) Epoxy silanes such as -epoxycyclohexyl) ethyltrimethoxysilane; N- (β-aminoethyl) -γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane It is preferable to use a silane coupling agent such as a reaction product of an aminosilane such as γ-mercaptopropyltrimethoxysilane or the like; a reaction product of an imidazole compound and γ-glycidoxypropyltrimethoxysilane. These can be used singly or in combination of two or more.
Further, the blending amount of the coupling agent used for the surface treatment and the surface treatment method are not particularly limited.

[Other ingredients]
Various additives can be further blended in the epoxy resin composition of the present invention as necessary. For example, a mold release agent comprising a curing accelerator such as an imidazole compound, a tertiary amine compound, or a phosphorus compound, a thermoplastic resin, a thermoplastic elastomer, an organic synthetic rubber, a low stress agent such as a silicone compound, or a wax such as carnauba wax. Agents, coloring agents such as carbon black, antimony compounds such as antimony trioxide, molybdenum compounds such as zinc molybdate-supporting talc, zinc molybdate-supporting zinc oxide, hydroxides such as aluminum hydroxide and magnesium hydroxide, zinc borate Additives such as flame retardants such as zinc stannate and halogen ion trapping agents such as hydrotalcite can be blended.

  In the present invention, it is preferable to use a curing accelerator in order to accelerate the curing reaction between the epoxy resin and the curing agent. The curing accelerator is not particularly limited as long as it accelerates the curing reaction. For example, triphenylphosphine, tributylphosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine, triphenylphosphine / triphenyl. Phosphorus compounds such as borane, tetraphenylphosphine / tetraphenylborate, triphenylphosphine-benzoquinone adduct, triethylamine, benzyldimethylamine, α-methylbenzyldimethylamine, 1,8-diazabicyclo (5,4,0) undecene Tertiary amine compounds such as 7 and imidazole compounds such as 2-methylimidazole, 2-phenylimidazole and 2-phenyl-4-methylimidazole can be used.

  Although the blending amount of the curing accelerator is an effective amount, the curing accelerator for promoting the curing reaction between the epoxy compound such as the phosphorus compound, the tertiary amine compound, and the imidazole compound and the curing agent (phenol resin) is an epoxy. It is preferable to set it as 0.1-3 mass parts with respect to 100 mass parts of total amounts of resin and a hardening | curing agent, especially 0.5-2 mass parts.

  The release agent component is not particularly limited, and all known components can be used. For example, montan wax which is an ester compound of carnauba wax, rice wax, polyethylene, polyethylene oxide, montanic acid, montanic acid and saturated alcohol, 2- (2-hydroxyethylamino) -ethanol, ethylene glycol, glycerin, etc .; stearic acid, Examples thereof include stearic acid ester, stearic acid amide, ethylenebisstearic acid amide, and a copolymer of ethylene and vinyl acetate. These can be used alone or in combination of two or more.

  As a compounding ratio of a mold release agent, it is desirable that it is 0.1-5 mass parts with respect to 100 mass parts of total amounts of (A) and (B) component, More preferably, it is 0.3-4 mass parts.

  In addition, when mixing the composition sufficiently uniformly with a mixer or the like, it is preferable to perform surface treatment or the like in advance with a silane coupling agent or the like as a wetter in order to improve storage stability.

  Here, as the silane coupling agent, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, γ-glycidoxypropyltriethoxysilane, p-styryltrimethoxysilane, γ- Methacryloxypropylmethyldimethoxysilane, γ-methacryloxypropyltrimethoxysilane, γ-methacryloxypropylmethyldiethoxysilane, γ-methacryloxypropyltriethoxysilane, γ-acryloxypropyltrimethoxysilane, N-β (aminoethyl) ) Γ-aminopropylmethyldimethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, γ-aminop Pyrtriethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, γ-mercaptopropylmethyldimethoxysilane, γ-mercaptopropyltrimethoxysilane, bis (triethoxypropyl) tetrasulfide, γ-isocyanatopropyltriethoxysilane, etc. Is mentioned. Here, the amount of the silane coupling agent used for the surface treatment and the surface treatment method are not particularly limited.

[Preparation of epoxy resin composition, etc.]
As a general method for preparing the epoxy resin composition of the present invention as a molding material, an epoxy resin, a curing agent, an inorganic filler such as silica, and other additives are blended at a predetermined composition ratio. After sufficiently uniformly mixing with a mixer or the like, a melt mixing process using a hot roll, a kneader, an extruder or the like is performed, and then cooled and solidified, and pulverized to an appropriate size to obtain a molding material.

  The epoxy resin composition of the present invention thus obtained can be effectively used for sealing various semiconductor devices. In this case, the most common method for sealing is a low-pressure transfer molding method. The molding temperature of the epoxy resin composition of the present invention is preferably 150 to 185 ° C. for 30 to 180 seconds, and post-curing is preferably performed at 150 to 185 ° C. for 2 to 20 hours.

  In this case, the epoxy resin composition of the present invention seals only the resin substrate surface on which the semiconductor element is mounted or one surface on the metal substrate surface side in a semiconductor device in which the semiconductor element is mounted on one surface of the resin substrate or metal substrate. It is effectively used for stopping, and is therefore preferably used for sealing packages such as a ball grid array and QFN.

EXAMPLES Hereinafter, although an Example and a comparative example are shown and this invention is demonstrated concretely, this invention is not restrict | limited to the following Example.
In addition, the component used by the following Example and comparative example is as follows. In the following examples, tables, etc., the symbols added below are used for each component.

[Examples 1-11, Comparative Examples 1-10]
The components shown in Tables 2 and 3 were uniformly melt-mixed with two hot rolls, cooled and pulverized to obtain an epoxy resin composition. The raw materials used are shown below.

[Epoxy resin]
In the epoxy resin in the above formula (1), the epoxy resins A to C having the following structures depending on the values of m and n, the epoxy resins (A) to (D) and (E) biphenyl as shown in Table 1 depending on the blending ratio. Aralkyl-type epoxy resin (NC3000: Nippon Kayaku Co., Ltd. product name) was used. G is the same as above.

  Epoxy resin I (m = 0, n = 0)

  Epoxy resin II (m = 0 and n = 1)

  Epoxy resin III (m = 1, n = 1)

（ｍ＝０〜１０の混合物） Epoxy resin (he) Biphenyl aralkyl type epoxy resin represented by the following formula: NC3000 (manufactured by Nippon Kayaku Co., Ltd.) Epoxy equivalent 272

(Mixture of m = 0 to 10)

Phenol resin (g): Phenol resin represented by the following formula (phenol equivalent 140)

（ｎ＝０〜１０の混合物）

(Mixture of n = 0 to 10)

  Phenol resin (h): Phenol resin represented by the following formula (phenol equivalent 140)

（ｎ＝０〜１０の混合物）

(Mixture of n = 0 to 10)

（ｍ＝０〜２０の混合物） Phenolic Resin (Li) Novolak-type phenolic resin represented by the following formula: TD-2131 (manufactured by Dainippon Ink & Chemicals, Inc.) (phenol equivalent 110)

(Mixture of m = 0-20)

(Other additives)
Inorganic filler: Spherical fused silica (trade name, manufactured by Tatsumori)
Curing accelerator: Triphenylphosphine (trade name, manufactured by Hokuko Chemical Co., Ltd.)
Mold release agent: Carnauba wax (trade name, manufactured by Nikko Fine Products Co., Ltd.)
Silane coupling agent: γ-glycidoxypropyltrimethoxysilane (KBM-403: trade name, manufactured by Shin-Etsu Chemical Co., Ltd.)

  The following properties were measured for these compositions. The results are shown in Table 2.

(A) Spiral flow value Using a mold conforming to the EMMI standard, measurement was performed under the conditions of 175 ° C., 6.9 N / mm ² , and a molding time of 120 seconds.

(B) Melt viscosity Using a Koka flow tester, the viscosity was measured at a temperature of 175 ° C. using a nozzle having a diameter of 1 mm under a pressure of 10 kgf.

(C) Glass transition temperature, coefficient of linear expansion Using a mold according to the EMMI standard, measurement was performed under the conditions of 175 ° C., 6.9 N / mm ² , and molding time of 120 seconds.

(D) Water absorption rate 175 ° C., 6.9 N / mm ² , forming a disk with a diameter of 50 × 3 mm under conditions of a molding time of 2 minutes, and post-curing at 180 ° C. for 4 hours, a constant temperature of 85 ° C./85% RH The sample was left in a humidity chamber for 168 hours, and the water absorption was measured.

(E) Package warpage amount Using the above epoxy resin composition, using a 0.40 mm thick BT resin substrate, mounting a 10 × 10 × 0.3 mm silicon chip, 175 ° C., 6.9 N / mm ² , Molding is performed under transfer conditions with a curing time of 2 minutes, and then post-curing is performed at 175 ° C. for 5 hours to produce a package with a package size of 32 × 32 mm and a thickness of 1.2 mm. The height displacement was measured in the diagonal direction of the package, and the largest value of the displacement difference was taken as the amount of warpage.

(F) Reflow resistance The package used for measuring the amount of package warpage was allowed to stand for 168 hours in a constant temperature and humidity chamber of 85 ° C./60% RH to absorb moisture, and then the IR reflow of FIG. After passing the conditions three times, the occurrence of internal cracks and the occurrence of delamination were observed using an ultrasonic probe.

The IR reflow conditions for reflow resistance measurement are shown.

Claims (6)

(A) an epoxy resin containing an epoxy resin (a) having an epoxy equivalent in the range of 175 to 210 and having at least one substituted or unsubstituted naphthalene ring in one molecule;
(B) a phenol resin having at least one substituted or unsubstituted naphthalene ring in one molecule;
(C) inorganic filler,
Is an essential component, and 45 to 60% by mass of the substituted or unsubstituted naphthalene ring of the epoxy resin (a) is contained in the total content of the epoxy resin (A). The epoxy resin composition according to claim 1, wherein the epoxy resin (a) is a naphthalene type epoxy resin represented by the following general formula (1).

(M and n are 0 or 1, R represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group, and G is a glycidyl group-containing organic group, provided that the general formula (1) is 100 masses. (The part contains 35 to 85 parts by mass of m = 0 and n = 0, and 1 to 35 parts by mass of m = 1 and n = 1.) The epoxy resin composition according to claim 1 or 2, wherein the phenol resin (B) contains a phenol resin (b) represented by the following general formula (2).

(R ¹ and R ² each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group, and n is an integer of 0 to 10)   4. The epoxy resin composition according to claim 1, wherein the phenol resin (b) of the general formula (2) is contained in an amount of 25 to 100% by mass based on the total phenol resin.   The semiconductor device sealed with the hardened | cured material of the epoxy resin composition of any one of Claims 1-4. 6. A semiconductor element is mounted on one surface of a resin substrate or a metal substrate, and substantially only one surface of the resin substrate surface or metal substrate surface side on which the semiconductor element is mounted is sealed. Semiconductor device.

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