JP5055778B2 - Epoxy resin composition, epoxy resin molding material and semiconductor device - Google Patents

Description

  The present invention relates to an epoxy resin composition, an epoxy resin molding material, and a semiconductor device using the same.

  In recent years, electronic devices have become smaller, lighter, and more functional, and as the integration of semiconductors has progressed year by year and the surface mounting of semiconductor devices has been promoted, new area-mounted semiconductor devices have been developed. It has been developed and is beginning to shift from conventional semiconductor devices. Typical area-mounting semiconductor devices are a ball grid array (hereinafter referred to as BGA) or a chip size package (hereinafter referred to as CSP) in pursuit of further miniaturization, but these are conventional quad flat packages (hereinafter referred to as CSP). The surface mount type semiconductor device represented by the small outline package (hereinafter referred to as SOP) has been developed to meet the demand for high pin count and high speed approaching the limit. The structure of the area mounting type semiconductor device includes a hard circuit board represented by bismaleimide triazine (hereinafter referred to as BT) resin / copper foil circuit board or a flexible circuit board represented by polyimide resin film / copper foil circuit board. A semiconductor element is mounted on one side, and only the element mounting surface, that is, one side of the substrate is molded and sealed with a molding material (hereinafter referred to as a resin molding material) of a resin composition. In addition, solder balls are two-dimensionally formed in parallel on the surface opposite to the element mounting surface of the substrate, and are joined to a circuit substrate on which a semiconductor device is mounted. Further, as a substrate on which the element is mounted, a structure using a metal substrate such as a lead frame in addition to the organic circuit substrate has been devised.

These area-mounted semiconductor devices have a single-side sealing configuration in which only the element mounting surface of the substrate is sealed with a resin molding material and the solder ball forming surface side is not sealed. Very rarely, a metal substrate such as a lead frame may have a sealing resin layer of about several tens of μm on the solder ball forming surface, but a sealing resin of about several hundred μm to several mm on the device mounting surface. Since the layer is formed, it is substantially single-sided sealed. For this reason, these semiconductor devices are immediately after molding due to the mismatch between thermal expansion and thermal shrinkage between the organic substrate or metal substrate and the cured resin composition, or the effects of curing shrinkage during molding and curing of the resin molding material. Warp is likely to occur. Further, due to insufficient fluidity and high viscosity of the resin molding material, the gold wire flows at the time of molding, and gold wire contact occurs. Furthermore, when solder bonding is performed on a circuit board on which these semiconductor devices are mounted, the semiconductor device is caused by stress caused by moisture in the semiconductor device being rapidly vaporized at a high temperature due to moisture absorption of a cured product of the epoxy resin composition. Cracks occur. Furthermore, in recent years, the use of lead-free solder having a higher melting point than ever is increasing due to environmental problems, and it is necessary to raise the mounting temperature by about 20 ° C. compared to the prior art by applying this solder. There is a problem in that the property is significantly lower than the current state. For these reasons, the demand for improving the reliability of semiconductor devices by increasing the level of the epoxy resin composition is acceleratingly increasing, and higher fluidization of resins and higher filling of inorganic fillers are progressing.
In addition, in order to maintain low viscosity and high fluidity during molding, use of a resin having a low melt viscosity (see, for example, Patent Document 1), and in order to increase the compounding amount of the inorganic filler, the inorganic filler is changed to silane. A method of surface treatment with a coupling agent is known (for example, see Patent Document 2). However, many of these satisfy only one of various required characteristics, and no method has yet been found that can achieve both solder resistance during mounting and high fluidization, and has excellent fluidity and solder resistance. There was a need for more technology.

JP-A-7-130919 (pages 2 to 10) JP-A-8-20673 (pages 2-6)

  The present invention has been made in view of the above circumstances, and the object thereof is excellent in fluidity and solder resistance using a specific resin component and a specific compound, and particularly suitable for area mounting type semiconductor encapsulation. An epoxy resin composition, an epoxy resin molding material, and a semiconductor device using the same are provided.

The present invention
[1] Epoxy resin (A), phenol resin-based curing agent (B), silane coupling agent (C), compound (D) in which a hydroxyl group is bonded to each of two or more adjacent carbon atoms constituting an aromatic ring, An epoxy resin composition comprising a curing accelerator (E) and an inorganic filler (F) , wherein the epoxy resin (A) comprises an epoxy resin (a1) represented by the following general formula (1), The phenol resin-based curing agent (B) includes a phenol resin (b1) represented by the following general formula (2) and a phenol resin (b2) represented by the following general formula (3). The phenol resin (b2) represented is contained in a proportion of 5 wt% to 60 wt% with respect to the total phenol resin curing agent, and hydroxyl groups are bonded to two or more adjacent carbon atoms constituting the aromatic ring. Compound (D) Catechol, pyrogallol, or 2,3-dihydroxynaphthalene, containing a fused silica as an inorganic filler (F) in a proportion of 81% by weight to 90% by weight with respect to the epoxy resin composition Epoxy resin composition for sealing,

（ただし、上記一般式（１）において、Ｒ１〜Ｒ８は、水素原子又は炭素数１〜４のアルキル基から選択される基であり、互いに同一であっても異なっていてもよい、）

(However, in the general formula (1), R1 to R8 are groups selected from a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and may be the same or different from each other.)

（ただし、上記一般式（２）において、Ｒ_１、Ｒ_２は水素原子又は炭素数１〜４のアルキル基から選択される基であり、互いに同一であっても、異なっていてもよい、ｎは平均値で、５以下の正数、）

(However, in the above general formula _{(2), R 1, R} 2 is a group selected from an alkyl group having 1 to 4 carbon hydrogen atom or a carbon, it may be the same or may be different from one another, n Is an average value, a positive number less than 5 )

（ただし、上記一般式（３）において、Ｒは水素原子又は炭素数１〜４のアルキル基から選択される基であり、互いに同一であっても、異なっていてもよい、ｎは平均値で、１〜５の正数、）

(However, in the said General formula (3), R is a group selected from a hydrogen atom or a C1-C4 alkyl group, and may mutually be same or different, n is an average value. , A positive number from 1 to 5,

[2] The epoxy resin composition according to item [1], wherein the silane coupling agent (C) is contained at a ratio of 0.01 to 1% by weight with respect to the total epoxy resin composition,
[3] The compound (D) in which a hydroxyl group is bonded to each of two or more adjacent carbon atoms constituting the aromatic ring is contained in a ratio of 0.01 to 1% by weight based on the total epoxy resin composition. 1] or epoxy resin composition according to item [2],

[ 4 ] An epoxy resin molding material for semiconductor encapsulation formed by mixing and / or melt-kneading the epoxy resin composition according to any one of [1] to [ 3 ],
[ 5 ] A semiconductor device comprising a semiconductor element sealed using the epoxy resin molding material according to the item [ 4 ],
[ 6 ] A semiconductor device characterized by sealing one side of a substrate surface on which a semiconductor element is mounted on one side of the substrate, using the epoxy resin molding material according to item [ 4 ],
It is.

  According to the present invention, it has excellent fluidity and excellent solder resistance. Particularly in an area mounting type semiconductor device, gold wire deformation is small, and high reliability such as solder resistance is compatible. The remarkable effect that it becomes possible is obtained.

The present invention relates to an epoxy resin (A), a phenol resin-based curing agent (B), a silane coupling agent (C), and a compound in which a hydroxyl group is bonded to each of two or more adjacent carbon atoms constituting an aromatic ring (D ), Wherein the epoxy resin (A) includes an epoxy resin (a1) represented by the general formula (1), and the phenol resin curing agent (B) is represented by the general formula (2) A phenol resin (b1) represented by the following general formula (3) and the phenol resin (b2) represented by the general formula (3) is an all-phenol resin curing agent: With respect to the amount of 5% by weight or more and 60% by weight or less, the composition has excellent fluidity and solder resistance, and in an area mounting type semiconductor device, the deformation of the gold wire is small. Solder resistance Of that it is compatible with high reliability becomes possible, in which remarkable effects can be obtained.
Hereinafter, the present invention will be described in detail.

In this invention, the epoxy resin (a1) represented by General formula (1) is used as an epoxy resin (A). The epoxy resin (a1) represented by the general formula (1) used in the present invention is a crystalline and low molecular weight resin and thus has a low melt viscosity, and an epoxy resin molding material using this is excellent in fluidity and molded. Property is improved. In addition, since the epoxy resin (a1) represented by the general formula (1) is bifunctional, the cured product of the epoxy resin composition using the epoxy resin composition has a low crosslinking density and a low elastic modulus at high temperature. Suitable for stress relaxation during solder processing, etc., and good solder resistance.
Among the epoxy resins (a1) represented by the general formula (1), 4,4′-diglycidylbiphenyl or 3,3 ′, 5,5′-tetramethyl has a good balance between workability and practicality. -4,4'-diglycidylbiphenyl and a molten mixture of both are preferred. Although the specific example of the epoxy resin (a1) represented by General formula (1) is shown in following formula (6), it is not limited to these.

  In this invention, another epoxy resin can be used together in the range which does not impair the characteristic by mix | blending the epoxy resin (a1) represented by General formula (1) as an epoxy resin (A). When used together, the blending ratio of the epoxy resin (a1) represented by the general formula (1) is preferably at least 30% by weight or more, more preferably 50% by weight or more, further preferably 80% by weight in the total epoxy resin. That's it. Within the above range, the fluidity and moldability of the resin molding material can be improved, and the solder resistance of the cured resin can be improved. Although it does not specifically limit as an epoxy resin which can be used together, For example, a phenol novolak type epoxy resin, a cresol novolak type epoxy resin, a triphenolmethane type epoxy resin, a phenol aralkyl type epoxy resin having a phenylene and / or biphenylene skeleton, a naphthol type Examples include epoxy resins, naphthalene-type epoxy resins, alkyl-modified triphenol methane-type epoxy resins, triazine nucleus-containing epoxy resins, dicyclopentadiene-modified phenol-type epoxy resins, and these can be used alone or in combination of two or more. You may use together. The epoxy resin used in combination may be one having a viscosity as low as possible so as not to impair the characteristics of the epoxy resin (a1) represented by the general formula (1) having a very low melt viscosity at the time of molding. desirable.

In this invention, the phenol resin (b1) represented by General formula (2) and the phenol resin (b2) represented by General formula (3) are used as a phenol resin type hardening | curing agent (B). The phenol resin (b1) represented by the general formula (2) used in the present invention has a hydrophobic phenylene skeleton or a hydrophobic and rigid biphenylene skeleton between phenolic hydroxyl groups, and these were used. A cured product of the epoxy resin composition has a low moisture absorption rate, a low elastic modulus in a high temperature range exceeding Tg, and excellent adhesion to a semiconductor element, an organic substrate, and a metal substrate. Moreover, it has the characteristics that it is excellent in flame retardancy and has high heat resistance for a low crosslinking density.
However, on the other hand, when only the phenol resin (b1) represented by the general formula (2) is used, the curability is somewhat poor and good moldability may not be obtained. In the present invention, the phenol resin represented by the general formula (3) is used in order to improve curability and moldability without impairing the effects of using the phenol resin (b1) represented by the general formula (2). (B2) is used in a proportion of 5 wt% to 60 wt% with respect to the total phenol resin curing agent. Since the phenol resin (b2) represented by the general formula (3) has a short distance between the crosslinking points of the resin skeleton and a high crosslinking density, the phenol resin (b1) represented by the general formula (2) and the general formula ( The cured product or molding material of the epoxy resin composition in which the phenol resin (b2) represented by 3) is used together in the above ratio is the case where only the phenol resin (b1) represented by the general formula (2) is used. In comparison, high Tg, low viscosity, high fluidity, good curability, and moldability can be obtained. A specific example of the phenol resin (b1) represented by the general formula (2) is shown in the following formula (7), and a specific example of the phenol resin (b2) represented by the general formula (3) is shown in the following formula (8). However, it is not limited to these.

（ただし、上記式（７）において、ｎは平均値で１〜５の正数。）

(In the above formula (7), n is an average value and is a positive number of 1 to 5.)

（ただし、上記式（８）において、ｎは平均値で１〜５の正数。）

(In the above formula (8), n is an average value and is a positive number of 1 to 5.)

  The blending ratio of the phenol resin (b2) represented by the general formula (3) used in the present invention is essential to be 5% by weight or more and 60% by weight or less in the total phenol resin curing agent, preferably Is 10 wt% or more and 55 wt% or less. Within the above range, the fluidity of the epoxy resin molding material can be obtained, that is, the effect of making it difficult for gold wire deformation to occur during sealing molding can be sufficiently obtained. Further, if it is within the above range, there is little risk of causing a decrease in solder resistance in the semiconductor device due to an increase in water absorption of the cured product of the epoxy resin composition, and there is also a small risk of causing a decrease in flame retardancy. .

  Moreover, the effect of using together the phenol resin (b1) represented by General formula (2) used by this invention and the phenol resin (b2) represented by General formula (3) in the said range is not impaired. It can be used in combination with other phenolic resin-based curing agents. Examples of other phenolic resin-based curing agents that can be used in combination include triphenolmethane type phenolic resin, terpene modified phenolic resin, dicyclopentadiene modified phenolic resin, phenol aralkyl resin having a phenylene skeleton, naphthol aralkyl resin, and the like. These may be used alone or in combination of two or more.

  The equivalent ratio (Ep / Ph) between the number of epoxy groups (Ep) of all epoxy resins used in the present invention and the number of phenolic hydroxyl groups (Ph) of all phenol resin curing agents is preferably 0.5 or more and 2 or less. Yes, particularly preferably from 0.7 to 1.5. If it is within the above range, there is little possibility of causing a decrease in moisture resistance, curability and the like.

The silane coupling agent (C) used in the present invention is not particularly limited, such as epoxy silane, amino silane, ureido silane, mercapto silane, etc., and reacts between the epoxy resin and the inorganic filler, and the epoxy resin and the inorganic filler. What is necessary is just to improve the interface strength of a filler. Examples of the epoxy silane include γ-glycidoxypropyltriethoxysilane, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldimethoxysilane, β- (3,4 epoxycyclohexyl) ethyltrimethoxysilane. Examples of aminosilane include γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, and N-β (aminoethyl) γ. -Aminopropylmethyldimethoxysilane, N-phenylγ-aminopropyltriethoxysilane, N-phenylγ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltriethoxysilane, N-6- (amino (Hexyl) 3-aminopropi Rutrimethoxysilane, N- (3- (trimethoxysilylpropyl) -1,3-benzenedimethanane, and the like. Examples of ureidosilane include γ-ureidopropyltriethoxysilane, hexamethyldisilazane, and the like. Examples of the mercaptosilane include γ-mercaptopropyltrimethoxysilane, and these silane coupling agents (C) may be used alone or in combination of two or more.
The silane coupling agent (C) is an epoxy resin due to a synergistic effect with the compound (D) (hereinafter referred to as the compound (D)) in which a hydroxyl group is bonded to each of two or more adjacent carbon atoms constituting the aromatic ring described later. Since it has the effect of lowering the viscosity of the resin molding material and improving the fluidity, the silane coupling agent (C) is essential for obtaining the effect of the compound (D) sufficiently. As a result, even when a large amount of a resin having a relatively high viscosity is blended or when a large amount of an inorganic filler is blended, sufficient fluidity as an epoxy resin molding material can be obtained.
The blending amount of the silane coupling agent (C) used in the present invention is preferably 0.01% by weight or more and 1% by weight or less, more preferably 0.05% by weight or more and 0.8 or less in the total epoxy resin composition. is there. Within the above range, the effect of lowering the viscosity of the epoxy resin molding material and improving the fluidity can be sufficiently obtained. Moreover, when it is in the above range, there is little possibility of causing an increase in water absorption of the cured epoxy resin and a decrease in solder resistance in the semiconductor device.

The compound (D) (hereinafter referred to as compound (D)) in which a hydroxyl group is bonded to each of two or more adjacent carbon atoms constituting the aromatic ring used in the present invention is represented by, for example, the following formula (9). Catechol, pyrogallol, gallic acid, gallic acid ester, or derivatives thereof. Examples thereof include 1,2-dihydroxynaphthalene, 2,3-dihydroxynaphthalene represented by the following formula (10), and derivatives thereof. These compounds (D) may be used individually by 1 type, or may use 2 or more types together. Of these, compounds (1,2-dihydroxynaphthalene, 2,3-dihydroxynaphthalene and derivatives thereof) whose mother nucleus is a naphthalene ring are more preferable in terms of easy control of fluidity and curability and low volatility. preferable. The compounding amount of the compound (D) is preferably 0.01% by weight or more and 1% by weight or less, more preferably 0.02% by weight or more and 0.5% by weight or less in the total epoxy resin composition. Within the above range, it is possible to obtain viscosity characteristics and flow characteristics as expected due to a synergistic effect with the silane coupling agent (C). Moreover, there exists little possibility of causing the fall of the sclerosis | hardenability and moldability of an epoxy resin molding material, or the fall of the physical property of an epoxy resin hardened | cured material as it is in the said range.

  The curing accelerator (E) that can be used in the present invention may be any material that promotes the curing reaction between the epoxy group of the epoxy resin and the phenolic hydroxyl group of the phenol resin-based curing agent. What is used for this can be used, and it does not specifically limit. For example, diazabicycloalkenes such as 1,8-diazabicyclo (5,4,0) undecene-7 and derivatives thereof, amine compounds such as tributylamine and benzyldimethylamine, imidazole compounds such as 2-methylimidazole, and triphenyl Examples include organic phosphines such as phosphine and methyldiphenylphosphine, and tetrasubstituted phosphonium / tetrasubstituted borates such as tetraphenylphosphonium / tetraphenylborate and tetraphenylphosphonium / tetrabenzoate borate. These are used alone. Also, two or more of them may be used in combination.

  Examples of the inorganic filler (F) that can be used in the present invention include fused silica, crystalline silica, alumina, silicon nitride, and aluminum nitride. When the amount of the inorganic filler is particularly large, it is preferable to use fused silica. Fused silica can be used in either crushed or spherical shape, but in order to increase the blending amount of fused silica and to suppress the increase in melt viscosity of the epoxy resin molding material, it is preferable to mainly use a spherical one. . In order to further increase the blending amount of the spherical silica, it is desirable to adjust so that the particle size distribution of the spherical silica becomes wider. The blending ratio of the inorganic filler (F) is not particularly limited, but is preferably 80% by weight or more and 92% by weight or less in the total epoxy resin composition. Within the above range, low moisture absorption and low thermal expansion can not be obtained and solder resistance can be prevented from becoming insufficient, and fluidity can be reduced, resulting in poor filling during molding. Inconveniences such as deformation of the gold wire in the semiconductor device due to the increase in viscosity can be suppressed.

The epoxy resin composition of the present invention has components (A) to (F) as main components, but in addition to these, brominated epoxy resin, antimony trioxide, phosphorus compound, metal hydroxide, etc. Flame retardants, natural waxes such as carnauba wax, synthetic waxes such as polyethylene wax, mold release agents such as higher fatty acids such as stearic acid and zinc stearate and metal salts thereof or paraffin, colorants such as carbon black and bengara, silicone oil Various additives such as a low stress agent such as silicone rubber and synthetic rubber, and an antioxidant such as bismuth oxide hydrate may be appropriately blended. Furthermore, if necessary, an inorganic filler may be used after coating with a coupling agent, an epoxy resin, or a phenol resin-based curing agent. As a coating method, the solvent is removed after mixing with a solvent. And a method of directly adding to an inorganic filler and mixing using a mixer.
The epoxy resin composition of the present invention is obtained by mixing the components (A) to (F) and other additives using, for example, a mixer and then kneading with a heat kneader, a heat roll, an extruder, etc. Then, it can be cooled and pulverized to obtain an epoxy resin molding material.
In order to seal an electronic component such as a semiconductor element using the epoxy resin molding material of the present invention and manufacture a semiconductor device, it may be cured by a conventional molding method such as a transfer mold, a compression mold, or an injection mold. .

EXAMPLES Hereinafter, although an Example demonstrates this invention concretely, this invention is not limited to these. The blending ratio is parts by weight.
Example 1

Epoxy resin of the following formula (6) [manufactured by Japan Epoxy Resin Co., Ltd., YX4000HK, softening point 105 ° C., epoxy equivalent 193] 8.60 parts by weight

Phenolic resin of the following formula (7) [Maywa Kasei Co., Ltd., MEH-7851SS, softening point 65 ° C., hydroxyl group equivalent 203, n = 1.6 in the following formula (7)]
3.10 parts by weight

Phenolic resin of the following formula (8) [manufactured by Sumitomo Bakelite Co., Ltd., PR-HF-3, softening point 81 ° C., hydroxyl group equivalent 105, n = 4.1 in the following formula (8)]
3.10 parts by weight

γ-Glycidylpropyltrimethoxysilane 0.30 parts by weight 2,3-dihydroxynaphthalene (reagent) 0.10 parts by weight Triphenylphosphine 0.20 parts by weight Spherical fused silica (average particle size 10.0 μm) 84.00 parts by weight Stearic acid wax (manufactured by NOF Corporation, trade name: SR-Sakura)
0.30 parts by weight Carbon black 0.30 parts by weight was mixed using a mixer, then kneaded 20 times using a biaxial roll having surface temperatures of 95 ° C. and 25 ° C., and the obtained kneaded material sheet was cooled. The material was pulverized to obtain an epoxy resin molding material. The properties of the obtained epoxy resin molding material, the cured resin and the semiconductor device obtained using the same were evaluated by the following methods.

Evaluation method Spiral flow: Using a low-pressure transfer molding machine, a spiral flow measurement mold conforming to EMMI-1-66, epoxy resin under conditions of a mold temperature of 175 ° C., an injection pressure of 6.9 MPa, and a curing time of 120 seconds The composition was injected and the flow length was measured. The unit is cm.

  Deformation rate of gold wire: 352 pBGA (substrate is 0.56 mm thick bismaleimide-triazine resin / glass cloth under conditions of a mold temperature of 175 ° C., an injection pressure of 6.9 MPa, and a curing time of 90 seconds using a transfer molding machine. The size of the substrate and the semiconductor device was 30 mm × 30 mm, the thickness was 1.17 mm, the size of the semiconductor element was 15 mm × 15 mm, and the thickness was 0.35 mm, and post-cured at 175 ° C. for 2 hours. After cooling to room temperature, it was observed with a soft X-ray fluoroscope, and the deformation rate of the gold wire was evaluated by the ratio of (flow rate) / (gold wire length). The criteria for determining the gold wire deformation rate were as follows: gold wire deformation rate of 3% or less: ◎ over 3% to 4% or less: ◯ over 4% ~: x.

  Solder resistance: 352 pBGA was molded in the same manner as in the evaluation of the gold wire deformation rate, and post-cured at 175 ° C. for 2 hours to obtain a sample. Each of the 10 samples was treated in an environment of 85 ° C. and a relative humidity of 60% for 168 hours, and then treated with IR (260 ° C.) for 10 seconds. Observation was carried out using an ultrasonic flaw detector, and the presence or absence of internal cracks and various interface peelings was examined. The criteria for determining solder resistance were a crack occurrence rate of 0% and no peeling: ○, and those where cracks or peeling occurred occurred as x.

Examples 2-10, Comparative Examples 1-7
Each component was mix | blended in the ratio shown in Table 1 and Table 2, the epoxy resin molding material was obtained like Example 1, and it evaluated similarly to Example 1. FIG. The results are shown in Tables 1 and 2.
The components used in other than Example 1 are shown below.

Epoxy resin represented by the following formula (11) [manufactured by Sumitomo Chemical Co., Ltd., ESCN195LB, softening point 65 ° C., epoxy equivalent 200, n = 4.0 in the following formula (11)]

Phenolic resin of the following formula (12) [Maywa Kasei Co., Ltd., MEH-7500, softening point 110 ° C., hydroxyl equivalent 97, n = 0.7 in the following formula (12)]

Aluminum hydroxide [manufactured by Sumitomo Chemical Co., Ltd., CL-303]
Catechol (reagent)
Pyrogallol (reagent)
1,6-dihydroxynaphthalene (reagent)

  Examples 1 to 10 according to the present invention are represented by the epoxy resin (a1) represented by the general formula (1), the phenol resin (b1) represented by the general formula (2), and the general formula (3). The blending ratio of the phenol resin (b2), the blending ratio of the silane coupling agent (C), the type and blending ratio of the compound (D) each having a hydroxyl group bonded to two or more adjacent carbon atoms constituting the aromatic ring, and , And the types of curing accelerators (E) or those containing different blending ratios of inorganic fillers (F), etc., but in either case, the fluidity (spiral flow) is high and the wire deformation is high. The result was small and excellent in solder resistance.

  On the other hand, in Comparative Example 1 using the phenol resin of the formula (12) instead of the phenol resin (b2) represented by the general formula (3), the fluidity is low, the gold wire deformation is large, and the solder resistance is also high. The result was inferior. Moreover, in Comparative Example 2 in which the blending ratio of the phenol resin (b2) represented by the general formula (3) is excessive, the fluidity is high and the deformation of the gold wire is small, but the solder resistance is inferior. . Further, Comparative Example 3 using only the phenol resin (b1) represented by the general formula (2) without using the phenol resin (b2) represented by the general formula (3) as the phenol resin-based curing agent (B). However, although the solder resistance was good, the fluidity was low and the gold wire deformation was large. From the comparison between the Examples and Comparative Examples 1, 2, and 3, the phenol resin curing agent (B) is represented by the phenol resin (b1) represented by the general formula (2) and the general formula (3). Advantageous when the blending ratio of the phenol resin (b2) represented by the general formula (3) is 5 wt% or more and 60 wt% or less with respect to the total phenol resin curing agent. Became clear.

  Further, in Comparative Example 4 using the epoxy resin of the formula (11) instead of the epoxy resin (a1) represented by the general formula (1), the fluidity is low, the gold wire deformation is large, and the solder resistance is also high. The result was inferior. Further, Comparative Example 5 in which no silane coupling agent (C) was used resulted in low fluidity, large deformation of the gold wire, and poor solder resistance. In Comparative Example 6 in which a compound (D) in which a hydroxyl group is bonded to each of two or more adjacent carbon atoms constituting an aromatic ring is not used, fluidity is low, gold wire deformation is large, and solder resistance is also high. The result was inferior. Further, instead of the compound (D) in which a hydroxyl group is bonded to two or more adjacent carbon atoms constituting an aromatic ring, a compound in which a hydroxyl group is bonded to two non-adjacent carbon atoms constituting an aromatic ring. In Comparative Example 7 using 1,6-dihydroxynaphthalene, the fluidity was low, the gold wire deformation was large, and the solder resistance was poor.

  The epoxy resin composition of the present invention has excellent fluidity and excellent solder resistance, and can be suitably used for a surface-mounted semiconductor device compatible with lead-free solder, especially an area-mounted semiconductor device. Is.

Claims (6)

Epoxy resin (A), phenol resin-based curing agent (B), silane coupling agent (C), compound (D) in which a hydroxyl group is bonded to each of two or more adjacent carbon atoms constituting an aromatic ring, and a curing accelerator (E) and an epoxy resin composition containing an inorganic filler (F), wherein the epoxy resin (A) includes an epoxy resin (a1) represented by the following general formula (1), and the phenol resin system The curing agent (B) includes a phenol resin (b1) represented by the following general formula (2) and a phenol resin (b2) represented by the following general formula (3), and is represented by the general formula (3). A compound in which the phenol resin (b2) is contained in a proportion of 5% by weight or more and 60% by weight or less based on the total phenol resin-based curing agent, and a hydroxyl group is bonded to each of two or more adjacent carbon atoms constituting the aromatic ring ( D) Cateco The semiconductor is characterized in that it is ru, pyrogallol, or 2,3-dihydroxynaphthalene, and contains fused silica as an inorganic filler (F) in a proportion of 81% by weight or more and 90% by weight or less based on the epoxy resin composition. An epoxy resin composition for sealing.

(However, in the said General formula (1), R1-R8 is group selected from a hydrogen atom or a C1-C4 alkyl group, and may mutually be same or different.)

(However, in the above general formula _{(2), R 1, R} 2 is a group selected from an alkyl group having 1 to 4 carbon hydrogen atom or a C, be the same as each other, it may be different .n Is an average value and is a positive number of 5 or less .)

(However, in the above general formula (3), R is a group selected from a hydrogen atom or an alkyl group having 1 to 4 carbon atoms, and may be the same or different. N is an average value. , A positive number from 1 to 5.)
The epoxy resin composition according to claim 1, wherein the silane coupling agent (C) is contained in a proportion of 0.01 to 1% by weight based on the total epoxy resin composition. The compound (D) in which a hydroxyl group is bonded to each of two or more adjacent carbon atoms constituting the aromatic ring is contained in a proportion of 0.01 to 1% by weight based on the total epoxy resin composition. Item 3. The epoxy resin composition according to Item 2. The epoxy resin molding material for semiconductor sealing formed by mixing and / or melt-kneading the epoxy resin composition in any one of Claims 1 thru | or 3 . A semiconductor device comprising a semiconductor element sealed using the epoxy resin molding material according to claim 4 . A semiconductor device comprising: a substrate surface on one side on which a semiconductor element is mounted on one side of the substrate, using the epoxy resin molding material according to claim 4 .