JP5057015B2 - Epoxy resin composition for semiconductor encapsulation and semiconductor device - Google Patents

Description

  In the present invention, a semiconductor element is mounted on one side of a resin substrate and a metal substrate, and the resin substrate surface on which the semiconductor element is mounted and a semiconductor component in which only one side of the metal substrate surface side is sealed is formed. , An epoxy resin composition for semiconductor encapsulation that gives a cured product excellent in releasability when continuously molded, and excellent in warping properties, reflow resistance, and moisture resistance reliability, and curing of the resin composition The present invention relates to a semiconductor device sealed with an object.

  Conventionally, resin-encapsulated diodes, transistors, ICs, LSIs, and super LSIs have been the mainstream of semiconductor devices, but epoxy resins are more formable, adhesive, electrical, mechanical, and more than other thermosetting resins. Since it has excellent moisture resistance and the like, it is common to seal a semiconductor device with an epoxy resin composition.

  However, in recent years, with the progress of miniaturization, weight reduction, and high performance of electronic devices, higher integration of semiconductor elements has progressed, and semiconductor device mounting technology has been promoted. The requirements for epoxy resins used as encapsulants are becoming increasingly severe, including lead-free.

  For example, ball grid arrays (BGA) and QFN, which are excellent in high-density packaging, are becoming mainstream in recent years for ICs and LSIs, but since this package seals only one side, warping after molding has become a major problem. .

  Up to now, one method for improving warpage has been to increase the glass transition temperature by increasing the crosslink density of the resin, but due to the increase in solder temperature due to lead-free, high elastic modulus and high hygroscopicity. Therefore, after solder reflow, peeling at the interface between the cured epoxy resin and the substrate and peeling at the interface between the semiconductor element and the semiconductor resin paste are problematic. On the other hand, it is possible to improve the low water absorption, low expansion coefficient, low elastic modulus at high temperature by increasing the filling of the inorganic filler using a resin having a low crosslinking density, and an effect on reflow resistance is expected. Since it will become high viscosity, the fluidity | liquidity at the time of shaping | molding will be impaired.

  In addition, a release agent such as natural wax is generally added to the epoxy resin composition for semiconductor encapsulation in order to enhance the releasability from the mold when sealing semiconductor components. However, when the semiconductor component is continuously formed, the mold may be soiled by the release agent component, or the releasability from the mold may be deteriorated due to oxidative degradation of the resin component. When the mold release property is lowered, there is a problem that the reliability of the semiconductor element is lowered due to damage at the time of mold release, the mold cleaning frequency is increased, and the productivity is lowered.

  In Japanese Patent No. 3137202 (Patent Document 1), in an epoxy resin composition comprising an epoxy resin and a curing agent, 1,1-bis (2,7-diglycidyloxy-1-naphthyl) alkane is used as the epoxy resin. An epoxy resin composition characterized by being used is disclosed. This epoxy resin cured product is extremely excellent in heat resistance and moisture resistance, and is said to overcome the hard and brittle defect generally possessed by cured products of high heat resistant epoxy resins.

  Further, JP-A-2005-15689 (Patent Document 2) discloses 1,1-bis (2,7-diglycidyloxy-1-naphthyl) alkane (a1) and 1- (2,7-diglycidyloxy- An epoxy resin (A) containing 1-naphthyl) -1- (2-glycidyloxy-1-naphthyl) alkane (a2) and 1,1-bis (2-glycidyloxy-1-naphthyl) alkane (a3); It is an epoxy resin composition essentially comprising a curing agent (B), and contains 40 to 95 parts by weight of (a3) in a total of 100 parts by weight of (a1), (a2) and (a3). An epoxy resin composition characterized by the above is disclosed. That is, it is stated that 40 to 95 parts by mass of m = 0 and n = 0 in the general formula (1) is preferable because of lowering of fluidity and curability. However, the epoxy resin (A) used in the present invention also has a naphthalene structure as described above, but by defining the content of m = 1 and n = 1 in the general formula (1), fluidity can be obtained. It has been found that the film has a good coefficient of thermal expansion, a low coefficient of linear expansion, a high glass transition temperature, a low hygroscopic property, and an excellent solder crack resistance.

In addition, as a well-known document relevant to this invention, there exist the following.
Japanese Patent No. 3137202 JP 2005-15689 A

  The present invention has been made in view of the above circumstances, and is excellent in releasability when continuously molding semiconductor components, and has good warpage characteristics, reflow resistance, and moisture resistance reliability. An object of the present invention is to provide an epoxy resin composition for encapsulating a semiconductor that gives an excellent cured product, and a semiconductor device encapsulated with a cured product of the resin composition.

As a result of intensive studies to achieve the above object, the present inventors,
(A) Naphthalene type epoxy resin represented by the following general formula (1)

（ｍ、ｎは０又は１、Ｒは水素原子、炭素数１〜４のアルキル基、あるいはフェニル基、Ｇはグリシジル基、但し上記一般式（１）１００質量部中にｍ＝０、ｎ＝０のものを４５〜７０質量部、ｍ＝１、ｎ＝１のものを１５〜３０質量部含有する。）
（Ｂ）１分子中に炭素数１〜４のアルキル基若しくはフェニル基置換又は非置換のナフタレン環を少なくとも１個以上有するフェノール樹脂硬化剤、
（Ｃ）下記に示す（ａ）成分及び（ｂ）成分を併用した離型剤、
（ａ）下記一般式（２）で示されるワックス

(M and n are 0 or 1, R is a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group, G is a glycidyl group, provided that m = 0, n = 100 in 100 parts by mass of the general formula (1). 45 to 70 parts by mass of 0, 15 to 30 parts by mass of m = 1, n = 1.)
(B) a phenol resin curing agent having at least one alkyl group having 1 to 4 carbon atoms or phenyl group substituted or unsubstituted naphthalene ring in one molecule;
(C) a mold release agent using the components (a) and (b) shown below,
(A) Wax represented by the following general formula (2)

（但し、式中Ｒ¹は炭素数１８〜４０の非置換の一価炭化水素基、Ｒ²は水素原子又はＲ¹−ＣＯ−基である。）
（ｂ）酸価が１５〜２８であるポリエチレンワックス、
（Ｄ）無機充填剤、
を必須成分とする半導体封止用エポキシ樹脂組成物が、連続成形性に優れ、また該エポキシ樹脂の硬化物で封止された半導体装置が、良好な反り特性、耐リフロー性、及び耐湿信頼性に優れるものであることを見出し、本発明をなすに至ったものである。
さらには、上記（Ｃ）成分の離型剤を（Ａ）エポキシ樹脂と（Ｂ）硬化剤の総量１００重量部に対して０．１〜７重量部添加することを特徴とする半導体封止用エポキシ樹脂組成物、及び該半導体封止用エポキシ樹脂の硬化物で封止された半導体装置を提供する。

(Wherein R ¹ is an unsubstituted monovalent hydrocarbon group, R ² represents a hydrogen atom or an R ¹ -CO- group 18-40 carbon atoms.)
(B) a polyethylene wax having an acid value of 15 to 28,
(D) inorganic filler,
An epoxy resin composition for encapsulating a semiconductor having an essential component is excellent in continuous moldability, and a semiconductor device encapsulated with a cured product of the epoxy resin has good warpage characteristics, reflow resistance, and moisture resistance reliability. The present invention has been found to be superior to the present invention.
Furthermore, 0.1 to 7 parts by weight of the release agent of the component (C) is added to 100 parts by weight of the total amount of the (A) epoxy resin and the (B) curing agent. An epoxy resin composition and a semiconductor device encapsulated with a cured product of the epoxy resin for semiconductor encapsulation are provided.

  Preferably, the epoxy resin composition described above contains a phenol resin (B) curing agent represented by the following general formula (2).

（Ｒ^３，Ｒ^４はそれぞれ独立して水素原子、炭素数１〜４のアルキル基、またはフェニル基を示し、ｐは、０〜１０の整数である。）

(R ³ and R ⁴ each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group, and p is an integer of 0 to 10)

  The epoxy resin composition for semiconductor encapsulation of the present invention is excellent in releasability when continuously molded when sealing semiconductor components, and also has good warpage characteristics, reflow resistance, and moisture resistance reliability. It gives an excellent cured product. Therefore, the semiconductor device sealed with the cured product of the epoxy resin composition for semiconductor sealing of the present invention is particularly useful in industry.

Hereinafter, the present invention will be described in more detail.
[(A) Epoxy resin]
The epoxy resin (A) used in the present invention contains the naphthalene type epoxy resin of the above general formula (1), and 45 to 70 masses of m = 0 and n = 0 in 100 mass parts of the general formula (1). parts, requires the m = 1, n = contains 15-30 parts by weight of 1.

  When the content of m = 0, n = 0 in the total 100 parts by mass of the general formula (1) is less than 35 parts by mass, the viscosity of the resin composition becomes high and the fluidity is lowered, resulting in 85 parts by mass. If it exceeds the part, the crosslink density of the resin composition is extremely lowered, so that the curability is lowered and the glass transition temperature is lowered. When m = 1 and n = 1 exceeds 35 parts by mass, the crosslinking density increases and the glass transition temperature rises, but the elastic modulus at high temperatures also increases, which is not preferable. Further, from the viewpoint of excellent curability, heat resistance, and high temperature elastic modulus of the resulting epoxy resin composition, the content of m = 0, n = 0 is 45 to 70 parts by mass, m = 1, n = 1. It is preferable that content is 5-30 mass parts.

  Japanese Patent Application Laid-Open No. 2005-15689 states that 40 parts by mass to 95 parts by mass of m = 0 and n = 0 is preferable because of lowering of fluidity and curability. However, the epoxy resin (A) used in the present invention also has a naphthalene structure as described above, but by defining the content of m = 1 and n = 1 in the general formula (1), fluidity can be obtained. It has been found that the film has a good coefficient of thermal expansion, a low coefficient of linear expansion, a high glass transition temperature, a low hygroscopic property, and an excellent solder crack resistance.

  Specific examples of the epoxy resin include the following.

（但しＲ、Ｇは上記したとおりである。）

(However, R and G are as described above.)

  Specific examples of R include a hydrogen atom, an alkyl group such as a methyl group, an ethyl group, and a propyl group, and a phenyl group. The organic group containing glycidyl group of G is specifically represented by the following formula. Groups and the like.

  In the present invention, in addition to the specific epoxy compound (A), other epoxy resins may be used in combination as the epoxy resin component. Other epoxy resins are not particularly limited, and are conventionally known epoxy resins, for example, novolak epoxy resins such as phenol novolac epoxy resins and cresol novolac epoxy resins, triphenolmethane epoxy resins, and triphenolpropane. Triphenolalkane type epoxy resin such as epoxy resin, biphenyl type epoxy resin, phenol aralkyl type epoxy resin, biphenyl aralkyl type epoxy resin, heterocyclic type epoxy resin, naphthalene ring-containing epoxy resins other than the above, bisphenol A type epoxy resin, Examples include bisphenol type epoxy resins such as bisphenol F type epoxy resins, stilbene type epoxy resins, halogenated epoxy resins, etc., and one or more of these can be used. .

  In this case, the compounding amount of the specific (A) naphthalene type epoxy resin is 50 to 100% by mass with respect to the total epoxy resin (the specific (A) naphthalene type epoxy resin (A) + other epoxy resin), In particular, the content is desirably 70 to 100% by mass. When the blending amount of the specific (A) naphthalene type epoxy resin is less than 50% by mass, sufficient heat resistance, reflow properties, moisture absorption characteristics and the like may not be obtained.

[(B) Curing agent]
The (B) component phenolic resin of the epoxy resin composition of the present invention functions as a curing agent for the (A) component epoxy resin. In the present invention, a substituted or unsubstituted naphthalene ring is present in one molecule. A phenol resin having at least one or more is used. Preferably, it is a phenol resin represented by the following general formula (3).

（Ｒ^３，Ｒ^４はそれぞれ独立して水素原子、炭素数１〜４のアルキル基、またはフェニル基を示し、ｐは、０〜１０の整数である。）

(R ³ and R ⁴ each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group, and p is an integer of 0 to 10)

Examples of R ³ and R ⁴ include a hydrogen atom, an alkyl group such as a methyl group, an ethyl group, and a propyl group, or a phenyl group.

  By using it as a phenol resin curing agent having such a naphthalene ring, a cured product having a low coefficient of linear expansion, a high glass transition temperature, a low elastic modulus in the temperature range above the glass transition temperature, and a low water absorption is obtained. Therefore, when the epoxy tree of the present invention is used as a sealing material for a semiconductor device, the crack resistance during thermal shock is improved, and the warpage of the package is also improved. Specific examples of the phenol resin having a naphthalene ring represented by the general formula (2) include the following compounds (4) to (7).

  In addition, as for the phenol resin of (B) component of the epoxy resin composition of this invention, you may use together other phenol resins in addition to the said specific phenol compound. Other phenol resins are not particularly limited, and conventionally known phenol resins, for example, novolak type phenol resins such as phenol novolak resin and cresol novolak resin, phenol aralkyl type phenol resin, biphenyl aralkyl type phenol resin, biphenyl type phenol Bisphenols such as resin, triphenol methane type phenol resin, triphenol alkane type phenol resin such as triphenol propane type phenol resin, alicyclic phenol resin, heterocyclic type phenol resin, bisphenol A type phenol resin, bisphenol F type phenol resin Type phenol resins and the like, and one or more of them can be used.

  In this case, the compounding quantity of the said specific phenol resin (B) is 25-100 mass% with respect to all the phenol resins (the said specific phenol resin (B) + other phenol resin), Especially 40-80 mass%. It is desirable to be. When the blending amount of the naphthalene type epoxy resin is less than 25% by mass, sufficient heat resistance, moisture absorption characteristics, warpage characteristics and the like may not be obtained.

  In this invention, although it does not restrict | limit especially about the compounding ratio with (A) component epoxy resin and (B) component phenol resin, The phenolic property contained in a hardening | curing agent with respect to 1 mol of epoxy groups contained in an epoxy resin. The molar ratio of hydroxyl groups is preferably in the range of 0.5 to 1.5, particularly 0.8 to 1.2.

[(C) Release agent]
(C) mold release agent used in the present invention,
(A) The following general formula (2)

（但し、式中Ｒ^１は炭素数１８〜４０、好ましくは１８〜３０の置換若しくは非置換の一価炭化水素基、Ｒ^２は水素原子又はＲ^１−ＣＯ−基である。）で示されるワックス、及び（ｂ）酸価が１５〜２８であるポリエチレンワックスを併用して用いるものである。本発明の２種の離型剤を併用することにより、連続して成形した時の離型性に優れ、しかも良好な反り特性、耐リフロー性、耐湿信頼性に優れた硬化物を与える半導体封止用エポキシ樹脂組成物を得ることができる。

Wherein R ¹ is a substituted or unsubstituted monovalent hydrocarbon group having 18 to 40 carbon atoms, preferably 18 to 30 carbon atoms, and R ² is a hydrogen atom or R ¹ —CO— group. A wax and (b) polyethylene wax having an acid value of 15 to 28 are used in combination. By using the two types of mold release agents of the present invention in combination, a semiconductor encapsulant that provides a cured product having excellent mold release characteristics when continuously molded, and excellent warpage characteristics, reflow resistance, and moisture resistance reliability. An epoxy resin composition for stopping can be obtained.

  Component (C) is added in an amount of 0.1 to 7 parts by weight, particularly 0.3 to 4 parts by weight, based on 100 parts by weight of the total amount of (A) epoxy resin and (B) curing agent. If the addition amount is small, a sufficient releasing effect may not be exhibited, and if the addition amount is large, the wax component may ooze out on the surface, which may cause surface contamination and mold contamination.

Here, as a specific example of the component (a) represented by the general formula (2),

（但し、ａは１８〜２３の整数である。）等が挙げられ、これらは１種を単独であるいは２種以上を併用して用いることができる。なお、（ａ）成分の酸価としては、１０〜３０、特に１５〜２５が好ましい。

(However, a is an integer of 18-23) etc. are mentioned, These can be used individually by 1 type or in combination of 2 or more types. In addition, as an acid value of (a) component, 10-30, especially 15-25 are preferable.

  The component (b) is a polyethylene wax having an acid value of 15 to 28, and specific examples thereof include a dropping point 104, a polyethylene wax having an acid value of 17, a dropping point 110, a polyethylene wax having an acid value of 27, and the like. These can be used alone or in combination of two or more.

  In the case of the (b) polyethylene wax of the present invention, when the acid value is less than 15 or exceeds 28, the release effect may not be sufficiently obtained. The acid value is preferably 17 to 27. Moreover, as a dropping point, 100-120, especially 100-110 are preferable. In the present invention, ASTM D1386 is used as the acid value measurement method. Moreover, the method of ASTM D566 is used for the dropping point.

  The addition amount of the component (a) and the component (b) is 0.1 to 7 parts by mass, particularly 0.3 to 4 parts by mass with respect to 100 parts by mass of the total amount of the (A) epoxy resin and the (B) curing agent, respectively. It is preferable that If the addition amount is small, a sufficient releasing effect may not be exhibited, and if the addition amount is large, the wax component may ooze out on the surface, which may cause surface contamination and mold contamination. The ratio of the component (a) to the component (b) is not particularly limited, but is (a) :( b) = 20: 1 to 1: 4, preferably 10: 1 to 1: 2.

  The epoxy resin composition for semiconductor encapsulation of the present invention can be used in combination with waxes such as carnauba wax, higher fatty acid, and synthetic wax within the range in which the objects and effects of the present invention can be expressed in addition to the above components.

[(D) Inorganic filler]
What is normally mix | blended with an epoxy resin composition can be used as an inorganic filler of (D) component mix | blended in the epoxy resin composition of this invention. Examples thereof include silicas such as fused silica and crystalline silica, alumina, silicon nitride, aluminum nitride, boron nitride, titanium oxide, glass fiber, and antimony trioxide. The average particle size and shape of these inorganic fillers and the filling amount of the inorganic filler are not particularly limited, but in order to improve lead-free solder crack resistance and flame retardancy, the moldability should be increased in the epoxy resin composition. It is preferable to fill as much as possible within a range that does not impair.

  In this case, as the average particle diameter and shape of the inorganic filler, spherical fused silica having an average particle diameter of 3 to 30 μm, particularly 5 to 25 μm, is particularly preferable. The filling amount of the inorganic filler is an epoxy resin and a curing agent ( The total amount of phenol resin) is particularly preferably 400 to 1200 parts by mass. Here, the average particle diameter can be obtained as a weight average value (or median diameter), for example, using a particle size distribution measuring device or the like by a laser light diffraction method or the like.

In addition, it is preferable to mix | blend what the said inorganic filler surface-treated with coupling agents, such as a silane coupling agent and a titanate coupling agent, in order to strengthen the bond strength of resin and an inorganic filler.

Examples of such a coupling agent include epoxy functions such as γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane. Functional alkoxysilanes such as N-β (aminoethyl) -γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, and γ-mercapto It is preferable to use a mercapto functional alkoxysilane such as propyltrimethoxysilane. These can be used singly or in combination of two or more.
Further, the blending amount of the coupling agent used for the surface treatment and the surface treatment method are not particularly limited.

  The filling amount of the inorganic filler is preferably 200 to 1100 parts by weight, particularly 500 to 800 parts by weight with respect to 100 parts by weight of the total amount of the (A) epoxy resin and (B) curing agent (phenol resin). If the amount is less than 200 parts by mass, the expansion coefficient increases, the warpage of the package increases, the stress applied to the semiconductor element may increase, and the device characteristics may deteriorate, and the amount of resin relative to the entire composition increases. In addition, the hygroscopicity is remarkably lowered and the crack resistance is also lowered. On the other hand, when it exceeds 1100 parts by mass, the viscosity at the time of molding increases, and the moldability may deteriorate. In addition, it is preferable to make this inorganic filler into content of 75 to 91 weight% of the whole composition, especially 78 to 89 weight%, and it is preferable to set it as content of 83 to 87 weight% further.

[(E) Curing accelerator]
Moreover, in this invention, in order to accelerate | stimulate the hardening reaction of an epoxy resin and a hardening | curing agent, it is preferable to use (E) hardening accelerator. The curing accelerator is not particularly limited as long as it accelerates the curing reaction. For example, triphenylphosphine, tributylphosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine, triphenylphosphine / triphenyl. Phosphorus compounds such as borane, tetraphenylphosphine / tetraphenylborate, triphenylphosphine-benzoquinone adduct, triethylamine, benzyldimethylamine, α-methylbenzyldimethylamine, 1,8-diazabicyclo (5,4,0) undecene Tertiary amine compounds such as 7 and imidazole compounds such as 2-methylimidazole, 2-phenylimidazole and 2-phenyl-4-methylimidazole can be used.

  The blending amount of the curing accelerator is an effective amount, but the curing accelerator for promoting the curing reaction between the epoxy compound such as the phosphorus compound, the tertiary amine compound, and the imidazole compound and the curing agent (phenol resin) is ( A) It is preferable to set it as 0.1-3 mass parts with respect to 100 mass parts of total amounts of an epoxy resin and (B) hardening | curing agent, especially 0.5-2 mass parts.

[Other ingredients]
The sealing resin composition of the present invention can further contain various additives as necessary. For example, additives such as a thermoplastic resin, a thermoplastic elastomer, an organic synthetic rubber, a silicone-based low stress agent, a colorant such as carbon black, and a halogen trap agent can be added and blended.

[Preparation of epoxy resin composition, etc.]
As a general method for preparing the sealing resin composition of the present invention as a molding material, an epoxy resin, a curing agent, silica, and other additives are blended at a predetermined composition ratio, and this is sufficiently obtained by a mixer or the like. After uniformly mixing, a melt mixing process using a hot roll, a kneader, an extruder or the like is performed, then cooled and solidified, and pulverized to an appropriate size to obtain a molding material.

  In addition, when mixing the composition sufficiently uniformly with a mixer or the like, it is preferable to perform surface treatment or the like in advance with a silane coupling agent or the like as a wetter in order to improve storage stability.

  Here, as the silane coupling agent, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, γ-glycidoxypropyltriethoxysilane, p-styryltrimethoxysilane, γ- Methacryloxypropylmethyldimethoxysilane, γ-methacryloxypropyltrimethoxysilane, γ-methacryloxypropylmethyldiethoxysilane, γ-methacryloxypropyltriethoxysilane, γ-acryloxypropyltrimethoxysilane, N-β (aminoethyl) ) Γ-aminopropylmethyldimethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, γ-aminop Pyrtriethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, γ-mercaptopropylmethyldimethoxysilane, γ-mercaptopropyltrimethoxysilane, bis (triethoxypropyl) tetrasulfide, γ-isocyanatopropyltriethoxysilane, etc. Is mentioned. Here, the amount of the silane coupling agent used for the surface treatment and the surface treatment method are not particularly limited.

  The thus obtained resin composition for encapsulating a semiconductor according to the present invention can be effectively used for encapsulating various semiconductor devices. In this case, the most common method for encapsulating is a low-pressure transfer molding method. It is done. In addition, as for the shaping | molding temperature of the resin composition for sealing of this invention, it is desirable to carry out for 30 to 180 second at 150-185 degreeC, and post-curing for 2 to 20 hours at 150-185 degreeC.

  Hereinafter, although an adjustment example, an Example, and a comparative example are shown and this invention is demonstrated concretely, this invention is not restrict | limited to the following Example. In the following examples, all parts are parts by mass.

"Examples 1-2 , Reference Examples 1-6, Comparative Examples 1-4"
The components shown in Table 1 were uniformly melt-mixed with two hot rolls, cooled and pulverized to obtain an epoxy resin composition for semiconductor encapsulation. The raw materials used are shown below.

(Epoxy resin)
In the epoxy resin in the above formula (1), the epoxy resins (i) to (iii) having the following structures depending on the values of m and n, the epoxy resins (A) to (D) as shown in Table 1 according to the blending ratio, and (E) Biphenyl aralkyl type epoxy resin (NC3000: Nippon Kayaku Co., Ltd. product name) was used. G is the same as above.

Epoxy resin (i) (m = 0, n = 0)

Epoxy resin (ii) (m = 1, n = 0, m = 0, n = 1)

Epoxy resin (iii) (m = 1, n = 1)

(Phenolic resin)
Phenolic resin (f): phenolic resin represented by the following formula

Novolac type phenolic resin (g): TD-2131 (trade name, manufactured by Dainippon Ink & Chemicals, Inc.)

(wax)
(H) Wax having an acid value of 20 represented by the following formula (manufactured by Clariant)

（ａは１８〜２３の整数）
（リ）滴点１０４、酸価１７のポリエチレンワックス（クラリアント（株）製）
（ヌ）カルナバワックス（日興ファインプロダクツ（株）製）

(A is an integer from 18 to 23)
(Li) Polyethylene wax having a drip point of 104 and an acid value of 17 (manufactured by Clariant)
(Nu) Carnauba wax (manufactured by Nikko Fine Products Co., Ltd.)

Inorganic filler: Spherical fused silica (manufactured by Tatsumori)
Curing accelerator: Triphenylphosphine (manufactured by Hokuko Chemical Co., Ltd.)

(Other additives)
Colorant: Carbon black (Mitsubishi Chemical Corporation)
Silane coupling agent: KBM-403, γ-glycidoxypropyltrimethoxysilane (manufactured by Shin-Etsu Chemical Co., Ltd.)

The following properties were measured for these compositions. The results are shown in Table 2.

(A) Spiral flow value Using a mold according to the EMMI standard, measurement was performed under the conditions of 175 ° C., 6.9 N / mm ² , and a molding time of 120 seconds.

(B) Melt viscosity Using a Koka flow tester, the viscosity was measured at a temperature of 175 ° C. using a nozzle having a diameter of 1 mm under a pressure of 10 kgf.

(C) Glass transition temperature, coefficient of linear expansion Using a mold according to the EMMI standard, measurement was performed under the conditions of 175 ° C., 6.9 N / mm ² , and molding time of 120 seconds.

(D) Water absorption rate 175 ° C., 6.9 N / mm ² , forming a disk with a diameter of 50 × 3 mm under the conditions of a molding time of 2 minutes, and post-curing at 180 ° C. for 4 hours, a constant temperature of 85 ° C./85% RH The sample was left in a humidity chamber for 168 hours, and the water absorption was measured.

(E) Package warpage amount A BT resin substrate having a thickness of 0.40 mm is used, a silicon chip having a package size of 32 × 32 mm, a thickness of 1.2 mm, and 10 × 10 × 0.3 mm is mounted at 175 ° C., 6.9 N / mm ² , and a curing time of 2 minutes. Molded under the transfer conditions described above, and then post-cured at 175 ° C. for 5 hours, the height displacement in the diagonal direction of the package was measured using a laser three-dimensional measuring machine, and the displacement difference was the largest The value was taken as the amount of warpage.

(F) Reflow resistance The package used in the measurement of the amount of package warpage was allowed to stand for 168 hours in a constant temperature and humidity chamber at 85 ° C./60% RH to absorb moisture, and then the IR reflow conditions shown in FIG. After three passes, we observed the occurrence of internal cracks and the state of delamination using an ultrasonic probe.

(G) Continuous moldability Using an 80 pin QFP (42 alloy) frame with a size of 14 × 20 × 2.8 mm mounted with a silicon chip of 7 × 7 × 0.3 mm coated with silicon nitride, The epoxy resin composition was continuously molded under the conditions of a temperature of 175 ° C., a molding pressure of 6.9 N / mm 2, a transfer speed of 10 seconds, and a molding time of 60 seconds. With each shot of continuous molding 200, 500, and 700, the condition of runner breakage and mold contamination were visually observed.

The IR reflow conditions for reflow resistance measurement are shown.

Claims (6)

(A) Naphthalene type epoxy resin represented by the following general formula (1)

(M and n are 0 or 1, R represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group, G represents a glycidyl group, provided that m = 0 in 100 parts by mass of the general formula (1), 45 to 70 parts by mass of n = 0, 15 to 30 parts by mass of m = 1 and n = 1.)
(B) a phenol resin curing agent having at least one alkyl group having 1 to 4 carbon atoms or phenyl group substituted or unsubstituted naphthalene ring in one molecule;
(C) a mold release agent using the components (a) and (b) shown below,
(A) Wax represented by the following general formula (2)

(Wherein R ¹ is an unsubstituted monovalent hydrocarbon group, R ² represents a hydrogen atom or an R ¹ -CO- group 18-40 carbon atoms.)
(B) Polyethylene wax having an acid value of 15 to 28 (D) An epoxy resin composition for semiconductor encapsulation containing an inorganic filler as an essential component.   The mold release agent of component (C) is added in an amount of 0.1 to 7 parts by mass with respect to 100 parts by weight of the total amount of (A) epoxy resin and (B) curing agent. Stopping epoxy resin composition. The phenol resin represented by the following general formula (3) contains 25 to 100 parts by mass in 100 parts by mass of the total phenol resin as the component (B). Epoxy resin composition.

(R ³ and R ⁴ each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group, and p is an integer of 0 to 10)   The epoxy resin composition according to any one of claims 1 to 3, wherein 50 to 70 parts by mass of m = 0, n = 0 are contained in 100 parts by mass of the naphthalene type epoxy resin represented by the general formula (1). object.   The semiconductor device sealed with the epoxy resin composition for semiconductor sealing of any one of Claims 1 thru | or 4.   6. A semiconductor element is mounted on one side of a resin substrate and a metal substrate, and substantially only one side of the resin substrate surface and the metal substrate surface side on which the semiconductor element is mounted is sealed. Semiconductor device.

Images