JP2007262384A - Epoxy resin composition for sealing semiconductor and semiconductor device - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide an epoxy resin composition for sealing a semiconductor having good fluidity and a small coefficient of linear expansion, exhibiting low hygroscopicity while having a high glass transition temperature and having excellent lead-free solder crack resistance and to provide a semiconductor device sealed with a cured product thereof. <P>SOLUTION: The epoxy resin composition for sealing the semiconductor comprises (A) an epoxy resin, (B) a phenol resin and (C) an inorganic filler. (A) The epoxy resin consists essentially of a polyvalent epoxy compound having a bisnaphthalene skeleton bonded with a -CHR- and ≥2 glycidyl groups and an epoxy resin component having an anthracene skeleton and 2 glycidyl groups. <P>COPYRIGHT: (C)2008,JPO&INPIT

Description

  The present invention provides an epoxy resin composition for semiconductor encapsulation which has good fluidity, a low coefficient of linear expansion, a low hygroscopicity while having a high glass transition temperature, and excellent lead-free solder crack resistance. And a semiconductor device sealed with a cured product of the resin composition.

  Conventionally, resin-encapsulated diodes, transistors, ICs, LSIs, and super LSIs have been the mainstream of semiconductor devices, but epoxy resins are more formable, adhesive, electrical, mechanical, and more than other thermosetting resins. Since it has excellent moisture resistance and the like, it is common to seal a semiconductor device with an epoxy resin composition. However, in recent years, with the progress of miniaturization, weight reduction, and high performance of electronic devices, higher integration of semiconductor elements has progressed, and semiconductor device mounting technology has been promoted. The requirements for epoxy resins used as encapsulants are becoming increasingly severe, including lead-free.

  For example, ball grid arrays (BGA) and QFN, which are excellent in high-density packaging, are becoming mainstream in recent years for ICs and LSIs. However, since this package seals only one side, warping after molding has become a major problem. . Up to now, one method for improving warpage has been to increase the crosslink density of the resin and increase the glass transition temperature. However, due to the increase in solder temperature due to lead-free soldering, the elastic modulus at high temperatures is high and the hygroscopic property is high. Therefore, after the solder reflow, peeling at the interface between the cured epoxy resin and the substrate and peeling at the interface between the semiconductor element and the semiconductor resin paste are problematic. On the other hand, it is expected to have an effect on reflow resistance by improving the low water absorption, low expansion coefficient, and low elastic modulus at high temperature by increasing the inorganic filler by using a resin having a low crosslinking density. However, since it becomes high viscosity, the fluidity | liquidity at the time of shaping | molding will be impaired.

  In Japanese Patent No. 3137202 (Patent Document 1), in an epoxy resin composition comprising an epoxy resin and a curing agent, 1,1-bis (2,7-diglycidyloxy-1-naphthyl) alkane is used as the epoxy resin. An epoxy resin composition characterized by being used is disclosed. This epoxy resin cured product is extremely excellent in heat resistance and moisture resistance, and is said to overcome the hard and brittle defect generally possessed by cured products of high heat resistant epoxy resins.

Further, JP-A-2005-15689 (Patent Document 2) discloses 1,1-bis (2,7-diglycidyloxy-1-naphthyl) alkane (a1) and 1- (2,7-diglycidyloxy- An epoxy resin (A) containing 1-naphthyl) -1- (2-glycidyloxy-1-naphthyl) alkane (a2) and 1,1-bis (2-glycidyloxy-1-naphthyl) alkane (a3); It is an epoxy resin composition essentially comprising a curing agent (B), and contains 40 to 95 parts by weight of (a3) in a total of 100 parts by weight of (a1), (a2) and (a3). An epoxy resin composition characterized by the above is disclosed. That is, it is stated that 40 to 95 parts by weight of m = 0 and n = 0 in the general formula (1) is preferable because of lowering of fluidity and curability.
However, these epoxy resin compositions also have good fluidity, a low coefficient of linear expansion, low moisture absorption while having a high glass transition temperature, and excellent resistance to solder cracking for semiconductor encapsulation. It is still not enough to give an epoxy resin.

Japanese Patent No. 3137202 JP 2005-15689 A

  Due to the above problems, epoxy resin composition for semiconductor encapsulation has good fluidity, low coefficient of linear expansion, high glass transition temperature, low hygroscopicity, and excellent lead-free solder crack resistance It is an object to provide a semiconductor device sealed with a cured product of the product and the resin composition.

  As a result of intensive studies to achieve the above object, the present inventors have found that the following general formula (1) and general formula (2) in an epoxy resin composition mainly composed of an epoxy resin, a curing agent, and an inorganic filler. ) A specific epoxy resin and a specific phenol resin, in particular, a phenol resin of the general formula (3) is used in combination with good fluidity, a low coefficient of linear expansion, and a high glass transition temperature. The present inventors have found that an epoxy resin composition for semiconductor encapsulation that exhibits a low hygroscopic property and gives a cured product excellent in solder crack resistance can be obtained, and has led to the present invention.

（ｍ、ｎは０又は１、Ｒは水素原子、炭素数１〜４のアルキル基、又はフェニル基を示し、Ｇはグリシジル基含有有機基である。但し、上記一般式（１）のエポキシ樹脂１００質量部中にｍ＝０、ｎ＝０のものを３５〜８５質量部、ｍ＝１、ｎ＝１のものを１〜３５質量部含有する。）

（式中のＲ¹は水素原子、炭素数１〜４のアルキル基、又はフェニル基である。Ｇはグリシジル基含有有機基を示す。ｐは０〜１００の整数である。）
［ＩＩ］ フェノール樹脂（Ｂ）が、一般式（３）で示されるフェノール樹脂である［Ｉ］記載のエポキシ樹脂組成物。

（Ｒ¹，Ｒ²はそれぞれ独立して水素原子、炭素数１〜４のアルキル基、又はフェニル基を示し、ｑは、０〜１０の整数である。）
［ＩＩＩ］ 一般式（３）のフェノール樹脂（Ｂ）が全フェノール樹脂１００質量部中に２５〜１００質量部含有することを特徴とする［ＩＩ］記載のエポキシ樹脂組成物。
［ＩＶ］ 一般式（１）で示されるエポキシ樹脂と一般式（２）で示されるエポキシ樹脂の配合質量比率が２０／８０〜８０／２０であることを特徴とする［Ｉ］〜［ＩＩＩ］のいずれか１項記載のエポキシ樹脂組成物。
［Ｖ］ ［Ｉ］〜［ＩＶ］のいずれか１項記載の半導体封止用エポキシ樹脂組成物で封止された半導体装置。
［ＶＩ］ 樹脂基板又は金属基板の片面に半導体素子が搭載され、この半導体素子が搭載された樹脂基板面又は金属基板面側の実質的に片面のみが封止されていることを特徴とする［Ｖ］記載の半導体装置。 That is, this invention provides the following epoxy resin composition for semiconductor sealing, and a semiconductor device.
[I] (A) Epoxy resin (B) An epoxy resin composition comprising, as an essential component, a phenol resin curing agent (C) having at least one substituted or unsubstituted naphthalene ring in one molecule, (C) an inorganic filler, (A) The epoxy resin composition for semiconductor sealing characterized by using as an essential component the epoxy resin shown by the general formula (1) and the epoxy resin shown by the general formula (2).

(M and n are 0 or 1, R represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group, and G is a glycidyl group-containing organic group, provided that the epoxy resin of the above general formula (1) 100 parts by mass include m = 0, n = 0, 35-85 parts by mass, m = 1, n = 1, 1-35 parts by mass.)

(In the formula, R ¹ is a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group. G represents a glycidyl group-containing organic group. P is an integer of 0 to 100.)
[II] The epoxy resin composition according to [I], wherein the phenol resin (B) is a phenol resin represented by the general formula (3).

(R ¹ and R ² each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group, and q is an integer of 0 to 10)
[III] The epoxy resin composition according to [II], wherein the phenol resin (B) of the general formula (3) is contained in an amount of 25 to 100 parts by mass in 100 parts by mass of the total phenol resin.
[IV] The blending mass ratio of the epoxy resin represented by the general formula (1) and the epoxy resin represented by the general formula (2) is 20/80 to 80/20 [I] to [III] The epoxy resin composition according to any one of the above.
[V] A semiconductor device encapsulated with the epoxy resin composition for encapsulating a semiconductor according to any one of [I] to [IV].
[VI] A semiconductor element is mounted on one surface of a resin substrate or a metal substrate, and substantially only one surface on the resin substrate surface or metal substrate surface side on which the semiconductor element is mounted is sealed. V] semiconductor device.

  The epoxy resin composition for semiconductor encapsulation of the present invention has good fluidity, a low coefficient of linear expansion, a low hygroscopicity while having a high glass transition temperature, and also has a lead-free solder crack resistance. It gives an excellent cured product. Therefore, the semiconductor device sealed with the cured product of the epoxy resin composition for semiconductor sealing of the present invention is particularly useful in industry.

The present invention will be described in detail below.
[(A) Epoxy resin]
The epoxy resin (A) used in the present invention is an epoxy resin represented by the following general formula (1) and an epoxy resin represented by the general formula (2). Moreover, 20-100 mass parts of epoxy resins shown by General formula (1) and 20-80 mass parts of epoxy resins shown by General formula (2) in 100 mass parts of epoxy resin of (A) component contain. More preferably, in 100 parts by mass of the epoxy resin of component (A), the epoxy resin represented by the general formula (1) is 30 to 70 parts by mass, and the epoxy resin represented by the general formula (2) is 30 to 70 parts by mass. It is to contain part. If the general formula (1) is less than 20 parts by mass, the reactivity is lowered, which may adversely affect the warp characteristics and the like, and if it exceeds 80 parts by mass, the fluidity may be adversely affected. Thus, when the mixing ratio of General formula (1) and General formula (2) remove | deviates from between 20 / 80-80 / 20, there exists a possibility that sufficient performance cannot be provided to this epoxy resin composition. is there.

（ｍ、ｎは０又は１、Ｒは水素原子、炭素数１〜４のアルキル基、又はフェニル基を示し、Ｇはグリシジル基含有有機基である。但し、上記一般式（１）のエポキシ樹脂１００質量部中にｍ＝０、ｎ＝０のものを３５〜８５質量部、ｍ＝１、ｎ＝１のものを１〜３５質量部含有する。）

(M and n are 0 or 1, R represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group, and G is a glycidyl group-containing organic group, provided that the epoxy resin of the above general formula (1) 100 parts by mass include m = 0, n = 0, 35-85 parts by mass, m = 1, n = 1, 1-35 parts by mass.)

（式中のＲ¹は水素原子、炭素数１〜４のアルキル基、又はフェニル基である。Ｇはグリシジル基含有有機基を示す。ｐは０〜１００、好ましくは０〜１０、更に好ましくは０〜２の整数である。）

(In the formula, R ¹ is a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group. G represents a glycidyl group-containing organic group. P is 0 to 100, preferably 0 to 10, more preferably. It is an integer from 0 to 2.)

Here, specific examples of the glycidyl group-containing organic group of G include groups represented by the following formulas.

Examples of R and R ¹ include a hydrogen atom, an alkyl group such as a methyl group, an ethyl group, and a propyl group, or a phenyl group.
In this case, it is desirable to contain 35 to 85 parts by mass of m = 0 and n = 0, and 1 to 35 parts by mass of m = 1 and n = 1 in 100 parts by mass of the general formula (1). When the content of m = 0, n = 0 in the total 100 parts by mass of the general formula (1) is less than 35 parts by mass, the viscosity of the resin composition may be increased and the fluidity may be lowered. If the amount exceeds 85 parts by mass, the crosslink density of the resin composition is extremely reduced, so that the curability may be lowered or the glass transition temperature may be lowered. On the other hand, if m = 1 and n = 1 exceeds 35 parts by mass, the crosslinking density increases and the glass transition temperature increases, but the elastic modulus at high temperatures may also increase. Further, from the viewpoint of excellent curability, heat resistance, and high temperature elastic modulus of the resulting epoxy resin composition, the content of m = 0, n = 0 is 45 to 70 parts by mass, m = 1, n = 1. It is preferable that content is 5-30 mass parts.

  Specific examples of the epoxy resin represented by the general formula (1) include the following.

（但し、Ｇは上記した通りである。）

(However, G is as described above.)

  Specific examples of the epoxy resin represented by the general formula (2) include the following.

  In the present invention, in addition to the specific epoxy resin (A), other epoxy resins may be used in combination as the epoxy resin component. Other epoxy resins are not particularly limited, and are conventionally known epoxy resins, for example, novolak epoxy resins such as phenol novolac epoxy resins and cresol novolac epoxy resins, triphenolmethane epoxy resins, and triphenolpropane. Triphenolalkane type epoxy resins such as type epoxy resins, biphenyl type epoxy resins, phenol aralkyl type epoxy resins, biphenyl aralkyl type epoxy resins, heterocyclic type epoxy resins, naphthalene ring-containing epoxy resins other than the above, bisphenol A type epoxy resins, Examples include bisphenol type epoxy resins such as bisphenol F type epoxy resins, stilbene type epoxy resins, halogenated epoxy resins, etc., and one or more of these can be used. .

  In this case, the compounding quantity of the said specific epoxy resin (A) is 70-100 mass% with respect to an epoxy resin (the said specific epoxy resin (A) + other epoxy resin), especially 80-100 mass%. It is desirable. If the amount of the specific epoxy resin (A) is less than 70% by mass, sufficient performance cannot be imparted to the epoxy resin composition.

[(B) Phenolic resin]
The (B) component phenolic resin of the epoxy resin composition of the present invention functions as a curing agent for the (A) component epoxy resin. In the present invention, a substituted or unsubstituted naphthalene ring is present in one molecule. A phenolic resin having at least one is used. Preferably, it is a phenol resin represented by the following general formula (3).

（Ｒ¹，Ｒ²はそれぞれ独立して水素原子、炭素数１〜４のアルキル基、又はフェニル基を示し、ｑは、０〜１０、好ましくは０〜５の整数である。）
Ｒ¹，Ｒ²は、水素原子、メチル基、エチル基、プロピル基等のアルキル基、あるいはフェニル基が挙げられる。

(R ¹ and R ² each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group, and q is an integer of 0 to 10, preferably 0 to 5.)
Examples of R ¹ and R ² include a hydrogen atom, an alkyl group such as a methyl group, an ethyl group, and a propyl group, or a phenyl group.

By using such a phenol resin having a naphthalene ring as a curing agent, a cured product having a low coefficient of linear expansion, a high glass transition temperature, a low elastic modulus in a temperature range above the glass transition temperature, and a low water absorption. Therefore, when the epoxy resin composition of the present invention is used as a sealing material for a semiconductor device, the crack resistance during thermal shock is improved, and the warpage of the package is also improved.
In addition, as for the phenol resin of the (B) component of the epoxy resin composition of this invention, you may use other phenol resins together besides the said specific phenol resin. Other phenol resins are not particularly limited, and conventionally known phenol resins, for example, novolak type phenol resins such as phenol novolak resin and cresol novolak resin, phenol aralkyl type phenol resin, biphenyl aralkyl type phenol resin, biphenyl type Such as phenol resin, triphenol methane type phenol resin, triphenol alkane type phenol resin such as triphenol propane type phenol resin, alicyclic phenol resin, heterocyclic phenol resin, bisphenol A type phenol resin, bisphenol F type phenol resin, etc. A bisphenol type phenol resin etc. are mentioned, The 1 type (s) or 2 or more types of these can be used.
In this case, the compounding quantity of the said specific phenol resin (B) is 25-100 mass% with respect to a phenol resin (the said specific phenol resin (B) + other epoxy resin), especially 40-80 mass%. It is desirable. When the blending amount of the naphthalene type epoxy resin is less than 25% by mass, sufficient heat resistance, moisture absorption characteristics, warpage characteristics and the like may not be obtained.

  In the present invention, the blending amount of the epoxy resin and the phenol resin is not particularly limited, but the molar ratio of the phenolic hydroxyl group contained in the curing agent is 0.5 to 1 with respect to 1 mole of the epoxy group contained in the epoxy resin. .5, particularly in the range of 0.8 to 1.2.

[(C) Inorganic filler]
What is normally mix | blended with an epoxy resin composition can be used as an inorganic filler of (C) component mix | blended in the epoxy resin composition of this invention. Examples thereof include silicas such as fused silica and crystalline silica, alumina, silicon nitride, aluminum nitride, boron nitride, titanium oxide, glass fiber, and antimony trioxide. The average particle size and shape of these inorganic fillers and the amount of inorganic fillers are not particularly limited, but in order to improve lead-free solder crack resistance and flame retardancy, moldability should be added to the epoxy resin composition. It is preferable to fill as much as possible within a range that does not impair.

  In this case, spherical fused silica having an average particle diameter of 3 to 30 μm, particularly 5 to 25 μm is particularly preferable as the average particle diameter and shape of the inorganic filler. Here, the average particle diameter can be obtained as a weight average value (or median diameter) or the like using a particle size distribution measuring apparatus or the like using a laser light diffraction method or the like, for example.

The inorganic filler is preferably blended in advance with a surface treatment with a coupling agent such as a silane coupling agent or a titanate coupling agent in order to increase the bond strength between the resin and the inorganic filler. Examples of such a coupling agent include epoxy functions such as γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, and β- (3,4-epoxycyclohexyl) ethyltrimethoxysilane. Functional alkoxysilanes such as N-β (aminoethyl) -γ-aminopropyltrimethoxysilane, γ-aminopropyltriethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, and γ-mercapto It is preferable to use a mercapto functional alkoxysilane such as propyltrimethoxysilane.
The amount of coupling agent used for the surface treatment and the surface treatment method are not particularly limited.

  The filling amount of the inorganic filler is preferably 200 to 1200 parts by weight, particularly 500 to 800 parts by weight with respect to 100 parts by weight of the total amount of the epoxy resin and the curing agent (phenolic resin). Increase in the expansion coefficient may increase the warpage of the package and increase the stress applied to the semiconductor element, leading to deterioration of element characteristics. Also, the amount of resin relative to the entire composition increases, so the hygroscopicity is significantly reduced. In addition, the crack resistance may be reduced. On the other hand, when it exceeds 1200 mass parts, the viscosity at the time of shaping | molding will become high, and a moldability may worsen. In addition, it is preferable to make this inorganic filler into content of 75-91 mass% of the whole composition, especially 78-89 mass%, and also it is preferable to set it as 83-88 mass% content.

[Other ingredients]
Various additives can be further blended in the epoxy resin composition of the present invention as necessary. For example, curing accelerators such as imidazole compounds, tertiary amine compounds, and phosphorus compounds, thermoplastic resins, thermoplastic elastomers, organic synthetic rubbers, low stress agents such as silicones, waxes such as carnauba wax, carbon black, etc. Additives such as colorants and halogen trapping agents can be added and blended.

  In the present invention, it is preferable to use a curing accelerator in order to accelerate the curing reaction between the epoxy resin and the curing agent. The curing accelerator is not particularly limited as long as it accelerates the curing reaction. For example, triphenylphosphine, tributylphosphine, tri (p-methylphenyl) phosphine, tri (nonylphenyl) phosphine, triphenylphosphine / triphenyl. Phosphorus compounds such as borane, tetraphenylphosphine / tetraphenylborate, triphenylphosphine-benzoquinone adduct, triethylamine, benzyldimethylamine, α-methylbenzyldimethylamine, 1,8-diazabicyclo (5,4,0) undecene Tertiary amine compounds such as 7, imidazole compounds such as 2-methylimidazole, 2-phenylimidazole, 2-phenyl-4-methylimidazole, and the like can be used.

  Although the blending amount of the curing accelerator is an effective amount, the curing accelerator for promoting the curing reaction between the epoxy compound such as the phosphorus compound, the tertiary amine compound, and the imidazole compound and the curing agent (phenol resin) is an epoxy. It is preferable to set it as 0.1-3 mass parts with respect to 100 mass parts of total amounts of resin and a hardening | curing agent, especially 0.5-2 mass parts.

  The release agent component is not particularly limited, and all known components can be used. For example, montan wax which is an ester compound of carnauba wax, rice wax, polyethylene, polyethylene oxide, montanic acid, montanic acid and saturated alcohol, 2- (2-hydroxyethylamino) -ethanol, ethylene glycol, glycerin, etc .; stearic acid, Examples thereof include stearic acid ester, stearic acid amide, ethylenebisstearic acid amide, and a copolymer of ethylene and vinyl acetate. These can be used alone or in combination of two or more.

  The mixing ratio of the release agent is preferably 0.1 to 5 parts by mass, more preferably 0.3 to 4 parts by mass with respect to 100 parts by mass of the total amount of the components (A) and (B).

  As a general method for preparing the epoxy resin composition of the present invention as a molding material, an epoxy resin, a curing agent, an inorganic filler, and other additives are blended at a predetermined composition ratio, and this is mixed with a mixer or the like. After sufficiently uniform mixing, a melt mixing process using a hot roll, a kneader, an extruder or the like is performed, then cooled and solidified, and pulverized to an appropriate size to obtain a molding material.

  In addition, when mixing the composition sufficiently uniformly with a mixer or the like, a silane coupling agent or the like can be blended to improve storage stability or as a wetter.

  Here, as the silane coupling agent, γ-glycidoxypropyltrimethoxysilane, γ-glycidoxypropylmethyldiethoxysilane, γ-glycidoxypropyltriethoxysilane, p-styryltrimethoxysilane, γ- Methacryloxypropylmethyldimethoxysilane, γ-methacryloxypropyltrimethoxysilane, γ-methacryloxypropylmethyldiethoxysilane, γ-methacryloxypropyltriethoxysilane, γ-acryloxypropyltrimethoxysilane, N-β (aminoethyl) ) Γ-aminopropylmethyldimethoxysilane, N-β (aminoethyl) γ-aminopropyltrimethoxysilane, N-β (aminoethyl) γ-aminopropyltriethoxysilane, γ-aminopropyltrimethoxysilane, γ-aminop Pyrtriethoxysilane, N-phenyl-γ-aminopropyltrimethoxysilane, γ-mercaptopropylmethyldimethoxysilane, γ-mercaptopropyltrimethoxysilane, bis (triethoxypropyl) tetrasulfide, γ-isocyanatopropyltriethoxysilane, etc. Is mentioned. Here, the amount of the silane coupling agent is not particularly limited.

  The epoxy resin composition for semiconductor encapsulation of the present invention thus obtained can be effectively used for sealing various semiconductor devices. In this case, the most common method for sealing is a low-pressure transfer molding method. Can be mentioned. In addition, as for the shaping | molding temperature of the epoxy resin composition for semiconductor sealing of this invention, it is desirable to perform 30 to 180 second at 150-185 degreeC, and post-curing for 2 to 20 hours at 150-185 degreeC.

  EXAMPLES Hereinafter, although an Example and a comparative example are shown and this invention is shown concretely, this invention is not restrict | limited to the following Example. In the following examples, all parts are parts by mass.

[Examples 1-9, Comparative Examples 1-6]
The components shown in Table 1 were uniformly melt-mixed with two hot rolls, cooled and pulverized to obtain an epoxy resin composition for semiconductor encapsulation. The raw materials used are shown below.

(A) Epoxy resin <br/> Epoxy resin (I), (B)
In the epoxy resin in the above formula (1), the epoxy resins (A) and (B) as shown in Table 1 were adjusted according to the blending ratio of the epoxy resins A to C having the following structures according to the values of m and n.

Epoxy resin A (m = 0, n = 0)

Epoxy resin B (m = 1, n = 0, m = 0, n = 1)

Epoxy resin C (m = 1, n = 1)

但し、Ｇは

を示す。 Epoxy resin (C)
Epoxy resin represented by the following general formula.

Where G is

Indicates.

Epoxy resin (d)
Biphenyl type epoxy resin (YX4000HK: manufactured by Japan Epoxy Resin Co., Ltd.)
Epoxy resin (e)
Biphenyl aralkyl type epoxy resin (NC3000: manufactured by Nippon Kayaku Co., Ltd.)
Epoxy resin (f)
Triphenolalkane type epoxy resin (EPPN-501: manufactured by Nippon Kayaku Co., Ltd.)

(B) Curing agent Phenolic resin (g): phenolic resin represented by the following formula

フェノール樹脂（チ）：下記式で示されるフェノール樹脂

Phenol resin (h): Phenol resin represented by the following formula

ノボラック型フェノール樹脂（リ）：ＴＤ−２１３１（大日本インキ化学工業（株）製商品名）

Novolac-type phenolic resin (Li): TD-2131 (trade name, manufactured by Dainippon Ink & Chemicals, Inc.)

(C) Inorganic filler Spherical fused silica: Spherical silica having an average particle size of 12 m and a maximum particle size of 75 m (manufactured by Tatsumori Co., Ltd.)

Other additives <br/> Curing accelerator (Triphenylphosphine: manufactured by Hokuko Chemical Co., Ltd.)
Mold release agent (Carnauba wax: manufactured by Nikko Fine Products Co., Ltd.)
Silane coupling agent γ-glycidoxypropyltrimethoxysilane (KBM-403: manufactured by Shin-Etsu Chemical Co., Ltd.)

  Tables 2 and 3 show the compositions of the epoxy resin compositions of Examples and Comparative Examples. A numerical value shows a mass part. The following properties were measured for these compositions. The results are shown in Tables 2 and 3.

(1) Spiral Flow Value Using a mold conforming to the EMMI standard, measurement was performed under the conditions of 175 ° C., 6.9 N / mm ² and a molding time of 120 seconds.

(2) Melt viscosity Using a Koka flow tester, the viscosity was measured at a temperature of 175 ° C. using a nozzle having a diameter of 1 mm under a pressure of 10 kgf.

(3) Glass transition temperature, coefficient of linear expansion Using a mold according to the EMMI standard, measurement was performed under the conditions of 175 ° C., 6.9 N / mm ² , and molding time of 120 seconds.

(4) Water absorption rate 175 ° C., 6.9 N / mm ² , forming a disk with a diameter of 50 × 3 mm under conditions of a molding time of 2 minutes, and post-curing at 180 ° C. for 4 hours, a constant temperature of 85 ° C./85% RH The sample was left in a humidity chamber for 168 hours, and the water absorption was measured.

(5) Package warpage amount A BT resin substrate with a thickness of 0.40 mm is used, a silicon chip with a package size of 32 × 32 mm, a thickness of 1.2 mm, and a size of 10 × 10 × 0.3 mm is mounted, and 175 ° C., 6.9 N / Mm ² , molding under transfer conditions of 2 minutes curing time, and then post-curing at 175 ° C. for 5 hours, measuring the height displacement in the diagonal direction of the package using a laser coordinate measuring machine, The largest value of the displacement difference was taken as the amount of warpage.

(6) Reflow resistance The package used in the measurement of the amount of package warpage was allowed to stand for 168 hours in a constant temperature and humidity chamber at 85 ° C./60% RH to absorb moisture, and then the IR reflow conditions shown in FIG. After three passes, the occurrence of internal cracks and the occurrence of delamination were observed using an ultrasonic probe.

The IR reflow conditions for reflow resistance measurement are shown.

Claims (6)

(A) Epoxy resin (B) A phenol resin curing agent having at least one substituted or unsubstituted naphthalene ring in one molecule, (C) an epoxy resin composition comprising an inorganic filler as an essential component, (A) An epoxy resin composition for encapsulating a semiconductor, characterized in that the component comprises an epoxy resin represented by general formula (1) and an epoxy resin represented by general formula (2) as essential components.

(M and n are 0 or 1, R represents a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group, and G is a glycidyl group-containing organic group, provided that the epoxy resin of the above general formula (1) 100 parts by mass include m = 0, n = 0, 35-85 parts by mass, m = 1, n = 1, 1-35 parts by mass.)

(In the formula, R ¹ is a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group. G represents a glycidyl group-containing organic group. P is an integer of 0 to 100.) The epoxy resin composition according to claim 1, wherein the phenol resin (B) is a phenol resin represented by the general formula (3).

(R ¹ and R ² each independently represent a hydrogen atom, an alkyl group having 1 to 4 carbon atoms, or a phenyl group, and q is an integer of 0 to 10)   The epoxy resin composition according to claim 2, wherein the phenol resin (B) of the general formula (3) is contained in an amount of 25 to 100 parts by mass in 100 parts by mass of the total phenol resin.   The blending mass ratio of the epoxy resin represented by the general formula (1) and the epoxy resin represented by the general formula (2) is 20/80 to 80/20. The epoxy resin composition as described.   The semiconductor device sealed with the epoxy resin composition for semiconductor sealing of any one of Claims 1 thru | or 4.   6. A semiconductor element is mounted on one surface of a resin substrate or a metal substrate, and substantially only one surface of the resin substrate surface or metal substrate surface side on which the semiconductor element is mounted is sealed. Semiconductor device.

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