JPH04275325A - Resin composition for sealing semiconductor - Google Patents

Resin composition for sealing semiconductor

Info

Publication number
JPH04275325A
JPH04275325A JP5821591A JP5821591A JPH04275325A JP H04275325 A JPH04275325 A JP H04275325A JP 5821591 A JP5821591 A JP 5821591A JP 5821591 A JP5821591 A JP 5821591A JP H04275325 A JPH04275325 A JP H04275325A
Authority
JP
Japan
Prior art keywords
weight
resin composition
epoxy resin
epoxy
resin
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP5821591A
Other languages
Japanese (ja)
Inventor
Shigeaki Tauchi
茂顕 田内
Chihiro Hatano
千尋 幡野
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Chemical and Materials Co Ltd
Original Assignee
Nippon Steel Chemical Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Chemical Co Ltd filed Critical Nippon Steel Chemical Co Ltd
Priority to JP5821591A priority Critical patent/JPH04275325A/en
Publication of JPH04275325A publication Critical patent/JPH04275325A/en
Withdrawn legal-status Critical Current

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  • Compositions Of Macromolecular Compounds (AREA)
  • Epoxy Resins (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To provide a resin composition for sealing semiconductors, useful as a resin composition for sealing the semiconductors, excellent in solder heat resistance and improved in moldability with a low stress. CONSTITUTION:A resin composition for sealing semiconductors containing (a) 100 pts.wt. epoxy resin having <=1 melt viscosity at 150 deg.C or an epoxy resin containing >=30wt.% aforementioned epoxy resin, (b) 300-1000 pts.wt. silica for filling, (c) 1-50 pts.wt. epoxy-modified liquid polybutadiene and (d) 20-100 pts.wt. curing agent. Since cured products excellent in strength and heat resistance can be obtained, excellent semiconductors without causing cracks can be obtained.

Description

【発明の詳細な説明】[Detailed description of the invention]

【0001】0001

【産業上の利用分野】本発明は、はんだ耐熱性に優れた
、低応力で成形性に優れた半導体封止用樹脂組成物及び
これを用いた半導体装置に関する。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a resin composition for semiconductor encapsulation that has excellent soldering heat resistance, low stress and excellent moldability, and a semiconductor device using the same.

【0002】0002

【従来の技術】近年、半導体装置の高集積化が急速に進
められており、素子サイズの大型化と配線幅の微細化が
著しく進展している。これらは高集積化された半導体装
置も含め、半導体装置は現在ほとんどが樹脂封止されて
いる。これは信頼性の高い優れた性能を有する封止用樹
脂の開発によるところが大きい。
2. Description of the Related Art In recent years, the integration of semiconductor devices has rapidly progressed, and the size of elements has increased and wiring widths have become finer. Most semiconductor devices, including highly integrated semiconductor devices, are currently sealed with resin. This is largely due to the development of a sealing resin that is highly reliable and has excellent performance.

【0003】一方、プリント基板への部品実装において
は、高密度実装、作業性合理化のため挿入型パッケージ
であるDIPパッケージから、表面実装型パッケージで
あるSOPパッケージに変化してきた。これにともない
、エポキシ樹脂としてビフェニル型エポキシ樹脂を使用
する方法が提案されている(特開昭58−39677号
公報、特開昭61−47725号公報、特開昭61−2
59552号公報)。
On the other hand, in mounting components onto printed circuit boards, there has been a shift from DIP packages, which are insert-type packages, to SOP packages, which are surface-mount packages, in order to achieve high-density mounting and streamline workability. In line with this, a method of using biphenyl type epoxy resin as the epoxy resin has been proposed (JP-A-58-39677, JP-A-61-47725, JP-A-61-2).
59552).

【0004】また、近年ではより高密度実装化のため、
表面実装素子第1世代であるSOP、QFPパッケージ
から、薄型化が進められたTSOP、TQFPパッケー
ジに移行しつつある。
[0004] Also, in recent years, due to higher density packaging,
SOP and QFP packages, which were the first generation of surface mount devices, are now transitioning to thinner TSOP and TQFP packages.

【0005】パッケージの薄型化にともない、チップ上
面の樹脂厚が非常に薄くなってきている。このため、実
装時における加熱による樹脂部分のクラックがより深刻
な問題となっている。はんだ付け工程におけるクラック
発生は、後硬化させてから実装工程までの間に、パッケ
ージダイパット裏面に剥離が発生し、ここにたまった水
分がはんだ付け加熱時に爆発的に水蒸気化、膨張するこ
とに起因すると言われており、その対策として、後硬化
したのち完全に乾燥し、防湿梱包させて出荷する方法が
採られている。
[0005] As packages become thinner, the thickness of the resin on the top surface of the chip has become extremely thin. For this reason, cracks in the resin portion due to heating during mounting have become a more serious problem. Cracks occur during the soldering process because peeling occurs on the back of the package die pad between post-curing and the mounting process, and the moisture that accumulates there explosively evaporates and expands during soldering heat. As a countermeasure to this problem, the method of post-curing, completely drying, and shipping in moisture-proof packaging has been adopted.

【0006】また、封止用樹脂の改良も検討されてきた
。たとえば、封止用樹脂にゴム成分を配合し、内部応力
を低下させる方法、新構造樹脂を使用する方法、充填剤
を高充填し線膨張係数を低下させる方法等がある(特開
昭63−189421号公報、特開昭63−16445
号公報)。また、オイル成分を添加することで、半導体
チップ、リードフレームとの密着性を向上させ、剥離を
防ぐ方法が提案されている(特開昭62−141018
号公報)。
[0006] Improvements in the sealing resin have also been studied. For example, there is a method of blending a rubber component into the sealing resin to reduce internal stress, a method of using a new structural resin, and a method of lowering the coefficient of linear expansion by filling the sealing resin with a high amount of filler (Japanese Unexamined Patent Application Publication No. 1983-1989-1). Publication No. 189421, Japanese Unexamined Patent Publication No. 16445/1983
Publication No.). In addition, a method has been proposed to improve the adhesion between semiconductor chips and lead frames and prevent peeling by adding an oil component (Japanese Unexamined Patent Publication No. 62-141018
Publication No.).

【0007】[0007]

【発明が解決しようとする課題】上記従来技術において
、防湿梱包方式は製品の取り扱い作業が煩雑となり、製
造コストが上昇する。
[Problems to be Solved by the Invention] In the above-mentioned prior art, the moisture-proof packaging method complicates handling of the product and increases manufacturing costs.

【0008】また、各種方法で改良された樹脂も、それ
ぞれ少しずつ効果をあげてきているが、実装技術の進歩
にともなうより高度な要求に応えるには十分でない。例
えば、ゴム成分を配合する方法では曲げ強度の低下を招
き、また、破砕シリカ高充填には流動性の点で限界があ
り、流動性改良のための球状シリカの使用は強度低下を
招くといった欠点がある。具体的にはこれらの従来の方
法で封止された半導体装置を吸湿処理後、例えば85℃
/85%RH処理72時間後にはんだ浸漬を行うと、パ
ッケージダイパット裏面に、ふくれ又はクラックが発生
する。すなわち、はんだ付け時のクラックを完全に防止
した封止用樹脂は得られておらず、よりはんだ耐熱性に
優れた封止用樹脂の開発が望まれている。
[0008] In addition, resins improved by various methods are gradually becoming more effective, but they are not sufficient to meet the more advanced demands that accompany advances in packaging technology. For example, the method of blending a rubber component leads to a decrease in bending strength, the high filling of crushed silica has a limit in terms of fluidity, and the use of spherical silica to improve fluidity leads to a decrease in strength. There is. Specifically, semiconductor devices sealed by these conventional methods are heated to 85°C after moisture absorption treatment.
If solder immersion is performed 72 hours after the /85% RH treatment, blisters or cracks will occur on the back surface of the package die pad. That is, a sealing resin that completely prevents cracks during soldering has not been obtained, and there is a desire to develop a sealing resin that has better soldering heat resistance.

【0009】したがって、本発明の目的は上記問題点を
解決し、はんだ耐熱性に優れ、低応力で成形性に優れた
半導体封止用樹脂組成物を提供することにある。
Therefore, an object of the present invention is to solve the above-mentioned problems and provide a resin composition for semiconductor encapsulation which has excellent soldering heat resistance, low stress, and excellent moldability.

【0010】0010

【課題を解決するための手段】本発明者等は上記問題点
を解決するために鋭意研究を行った結果、溶融粘度が1
P以下のエポキシ樹脂にエポキシ変性ポリブタジエンを
添加し、充填用シリカを高密度に充填させることにより
、上記問題点を解決できるという知見に基づき本発明を
完成するに到った。
[Means for Solving the Problems] The present inventors conducted intensive research to solve the above problems, and found that the melt viscosity is 1.
The present invention was completed based on the knowledge that the above-mentioned problems can be solved by adding epoxy-modified polybutadiene to an epoxy resin of P or less and filling it with silica at a high density.

【0011】すなわち本発明は、 (a)150℃での溶融粘度が1P以下のエポキシ樹脂
又はこれを30重量%以上含有するエポキシ樹脂100
重量部に対して、 (b)充填用シリカ300〜1000重量部(c)エポ
キシ変性液状ポリブタジエン1〜50重量部(d)硬化
剤20〜100重量部 を必須の成分として配合してなる半導体封止用樹脂組成
物であり、好ましくは、硬化剤として下記一般式(1)
That is, the present invention provides (a) an epoxy resin having a melt viscosity of 1P or less at 150°C, or an epoxy resin 100 containing 30% by weight or more of the same;
Semiconductor packaging comprising (b) 300 to 1000 parts by weight of silica for filling, (c) 1 to 50 parts by weight of epoxy-modified liquid polybutadiene, and (d) 20 to 100 parts by weight of a curing agent, based on the weight part. It is a resin composition for curing, and preferably has the following general formula (1) as a curing agent.

【化2】 で表される少なくとも2個のフェノール性水酸基を有す
る多価フェノールを用いることを特徴とする半導体封止
用樹脂組成物である。
This is a resin composition for semiconductor encapsulation characterized by using a polyhydric phenol having at least two phenolic hydroxyl groups represented by the following formula.

【0012】溶融粘度が1P以下のエポキシ樹脂を使用
し、充填用シリカを高充填し液状ポリブタジエンを添加
することで、流動性を維持した上で、線膨張率を低下さ
せ、さらに弾性率を低下させた低応力で密着性に優れ、
耐はんだ性に優れた硬化物とすることができる。
[0012] By using an epoxy resin with a melt viscosity of 1P or less, filling it with high filler silica, and adding liquid polybutadiene, while maintaining fluidity, the coefficient of linear expansion is lowered, and the modulus of elasticity is further lowered. Excellent adhesion with low stress,
A cured product with excellent solder resistance can be obtained.

【0013】エポキシ樹脂としては、溶融粘度が1P以
下のエポキシ樹脂を用いることではんだ耐熱性に優れた
硬化物を得ることができる。本発明で用いるエポキシ樹
脂は、100℃以上で溶融するエポキシ樹脂であり、特
に150℃前後での溶融粘度が1P以下のエポキシ樹脂
である。このようなエポキシ樹脂の代表的な例としては
ビフェニル型エポキシ樹脂である。エポキシ樹脂の全量
をビフェニル型エポキシ樹脂のような溶融粘度が1P以
下のエポキシ樹脂とすることが好ましいが、他のエポキ
シ樹脂と混合使用することもできる。ビフェニル型エポ
キシ樹脂のような溶融粘度が1P以下のエポキシ樹脂と
併用できる他のエポキシ樹脂としては、o−クレゾール
ノボラック型エポキシ樹脂、ビスフェノールA型エポキ
シ樹脂等公知のものを用いることができる。この際ビフ
ェニル型エポキシ樹脂のような溶融粘度が1P以下のエ
ポキシ樹脂は、エポキシ樹脂の全量の30重量%以上用
いる。これより少ないと、はんだ耐熱性が悪化する。
[0013] By using an epoxy resin having a melt viscosity of 1 P or less, a cured product having excellent soldering heat resistance can be obtained. The epoxy resin used in the present invention is an epoxy resin that melts at 100°C or higher, and particularly has a melt viscosity of 1P or lower at around 150°C. A typical example of such an epoxy resin is a biphenyl type epoxy resin. It is preferable that the entire amount of the epoxy resin be an epoxy resin having a melt viscosity of 1 P or less, such as a biphenyl type epoxy resin, but it can also be used in combination with other epoxy resins. As other epoxy resins that can be used in combination with epoxy resins having a melt viscosity of 1P or less, such as biphenyl epoxy resins, known ones such as o-cresol novolac epoxy resins and bisphenol A epoxy resins can be used. At this time, an epoxy resin having a melt viscosity of 1 P or less, such as a biphenyl type epoxy resin, is used in an amount of 30% by weight or more based on the total amount of the epoxy resin. If the amount is less than this, the soldering heat resistance will deteriorate.

【0014】本発明による効果を最大限に引き出すため
には、充填用シリカとして粒径10μm以上の球状シリ
カ2〜98重量%と粒径10μm以下の破砕シリカ2〜
98重量%を組み合わせ、その合計がエポキシ樹脂10
0重量部に対して、500重量部以上添加することが好
ましい。また、より好ましくは粒径10μm以上の球状
シリカは充填用シリカの全充填量の20〜80重量%の
範囲が望ましい。この範囲より少ないと流動性改良効果
が得られず、また、多いと強度が低下し、はんだ耐熱性
が悪化する。
In order to maximize the effects of the present invention, it is necessary to use 2 to 98% by weight of spherical silica with a particle size of 10 μm or more and 2 to 98% by weight of crushed silica with a particle size of 10 μm or less as filler silica.
98% by weight, the total is 10% by weight of epoxy resin
It is preferable to add 500 parts by weight or more to 0 parts by weight. More preferably, the spherical silica having a particle size of 10 μm or more is in the range of 20 to 80% by weight of the total filling amount of the filling silica. If the amount is less than this range, no fluidity improvement effect will be obtained, and if it is more than this, the strength will decrease and the soldering heat resistance will deteriorate.

【0015】液状ポリブタジエンとしては、平均分子量
が500〜5000程度であることが望ましい。平均分
子量が500より小さいと、成形時にブリードアウトを
起こし、金型汚れを発生する。また、平均分子量が50
00を超える場合は、粘度が上昇し混練が困難になり、
また、密着性が低下する。液状ポリブタジエンとしては
、液状ポリブタジエン中にエポキシ基を導入したエポキ
シ変成ポリブタジエンである。好適なエポキシ当量の範
囲としては、60〜500程度であり、この範囲より小
さいとエポキシ基の濃度が増加し、流動性に悪影響を及
ぼし、この範囲を超えるとエポキシ基を導入したことに
よる樹脂と液状ポリブタジエンの接着効果が得られない
The liquid polybutadiene preferably has an average molecular weight of about 500 to 5,000. If the average molecular weight is less than 500, bleed-out occurs during molding and mold stains occur. Also, the average molecular weight is 50
If it exceeds 00, the viscosity increases and kneading becomes difficult.
In addition, adhesion is reduced. The liquid polybutadiene is an epoxy-modified polybutadiene in which an epoxy group is introduced into liquid polybutadiene. A suitable range of epoxy equivalent is about 60 to 500; if it is smaller than this range, the concentration of epoxy groups will increase, which will have a negative effect on fluidity, and if it exceeds this range, the resin will deteriorate due to the introduction of epoxy groups. The adhesive effect of liquid polybutadiene cannot be obtained.

【0016】硬化剤はエポキシ樹脂100重量部に対し
て好ましくは20〜100重量部、より好ましくは30
〜70重量部添加する。硬化剤として特に好ましいもの
としては、下記一般式(1)
The curing agent is preferably used in an amount of 20 to 100 parts by weight, more preferably 30 parts by weight, based on 100 parts by weight of the epoxy resin.
Add ~70 parts by weight. Particularly preferable curing agents include the following general formula (1):

【化3】 で表される少なくとも2個のフェノール性水酸基を有す
る多価フェノールである。これを用いることで、はんだ
耐熱性に優れた硬化物を得ることができる。上記一般式
(1)で表される硬化剤は単独で用いることが好ましい
が、他の硬化剤と併用することもできる。この場合、上
記一般式(1)で表される硬化剤は硬化剤の全量に対し
て30重量%以上用いることが望ましい。これより少な
いと、強度が低下しはんだ耐熱性が低下する。
It is a polyhydric phenol having at least two phenolic hydroxyl groups represented by the following formula. By using this, a cured product with excellent solder heat resistance can be obtained. Although it is preferable to use the curing agent represented by the above general formula (1) alone, it can also be used in combination with other curing agents. In this case, it is desirable to use the curing agent represented by the above general formula (1) in an amount of 30% by weight or more based on the total amount of the curing agent. If the amount is less than this, the strength and solder heat resistance will decrease.

【0017】本発明においては、エポキシ樹脂の硬化剤
の他に硬化促進剤を配合することができる。硬化促進剤
としては公知のものが使用できるが、好適な硬化促進剤
としては、例えばトリフェニルフォスフィン、イミダゾ
ール、1,8−ジアザビシクロ〔5,4,0〕ウンデセ
ン−1などがある。添加量は用いる硬化促進剤により異
なり、例えばトリフェニルフォスフィンでは、エポキシ
樹脂100重量部に対して0.2〜5重量部の範囲が好
ましい。
In the present invention, a curing accelerator may be added in addition to the curing agent for the epoxy resin. Known curing accelerators can be used, and suitable curing accelerators include, for example, triphenylphosphine, imidazole, and 1,8-diazabicyclo[5,4,0]undecene-1. The amount added varies depending on the curing accelerator used, and for example, for triphenylphosphine, it is preferably in the range of 0.2 to 5 parts by weight per 100 parts by weight of the epoxy resin.

【0018】また本発明の半導体封止用樹脂組成物には
、必要に応じてOPワックス、カルバナワックスなどの
離型剤、γ−グリトキシプロピルトリメトキシシランな
どのカップリング剤、カーボンブラックなどの着色剤、
三酸化アンチモンなどの難燃剤を添加することもできる
The resin composition for semiconductor encapsulation of the present invention may also contain, if necessary, a mold release agent such as OP wax or carbana wax, a coupling agent such as γ-glytoxypropyltrimethoxysilane, carbon black, etc. colorant,
Flame retardants such as antimony trioxide may also be added.

【0019】本発明の半導体封止用樹脂組成物は、従来
公知の方法にしたがって混合、混練され、粉砕されたの
ち、加熱成形することによって半導体素子を封止した半
導体装置とすることができる。
The resin composition for semiconductor encapsulation of the present invention can be mixed, kneaded, and pulverized according to a conventionally known method, and then heated and molded to form a semiconductor device in which a semiconductor element is encapsulated.

【0020】[0020]

【実施例】以下に本発明の実施例を示し、本発明をさら
に詳しく説明する。
EXAMPLES Examples of the present invention will be shown below to explain the present invention in more detail.

【0021】実施例1〜2 溶融粘度0.2P(150℃)のビフェニル型エポキシ
樹脂(油化シェル社製、YX−4000)、硬化剤(テ
トラフェノールエタン)、平均粒径21μmの球状溶融
シリカ粉末、平均粒径6μmの破砕溶融シリカ粉末、平
均分子量2000、エポキシ当量120の液状エポキシ
変成ポリブタジエン、硬化促進剤(トリフェニルフォス
フィン)、その他の添加剤を表1に示す割合で混合した
のち、ミキシングロールを用い、110℃で4分間混練
し、冷却後粉砕し、封止用樹脂組成物を調整した。これ
らの封止用樹脂組成物を用いて、スパイラルフローを測
定した。また、同じ封止用樹脂組成物を用いて試験片を
作成し、曲げ強度、曲げ弾性率を測定した。さらに、8
4pinICを成形し、ポストキュア後、85℃、85
%の恒温恒湿器中で吸湿を24時間、48時間、及び7
2時間行った後、260℃のはんだ浴に10秒間浸漬さ
せ、パッケージのクラックを観察した。これらの結果を
表1に示す。
Examples 1 to 2 Biphenyl-type epoxy resin (manufactured by Yuka Shell Co., Ltd., YX-4000) with a melt viscosity of 0.2P (150°C), curing agent (tetraphenol ethane), and spherical fused silica with an average particle size of 21 μm. After mixing the powder, crushed fused silica powder with an average particle size of 6 μm, liquid epoxy-modified polybutadiene with an average molecular weight of 2000 and an epoxy equivalent of 120, a curing accelerator (triphenylphosphine), and other additives in the proportions shown in Table 1, Using a mixing roll, the mixture was kneaded at 110° C. for 4 minutes, cooled, and then pulverized to prepare a sealing resin composition. Spiral flow was measured using these sealing resin compositions. In addition, test pieces were prepared using the same sealing resin composition, and the bending strength and bending elastic modulus were measured. Furthermore, 8
After molding 4pin IC and post-curing, 85℃, 85
Absorb moisture in a constant temperature and humidity chamber for 24 hours, 48 hours, and 7%.
After 2 hours, the package was immersed in a 260° C. solder bath for 10 seconds, and cracks in the package were observed. These results are shown in Table 1.

【0022】表1に示した結果より、本発明の半導体封
止用樹脂組成物は、流動性、強度、はんだ耐熱性に優れ
ていることがわかる。
From the results shown in Table 1, it can be seen that the resin composition for semiconductor encapsulation of the present invention is excellent in fluidity, strength, and soldering heat resistance.

【0023】実施例3〜4 溶融粘度0.2P(150℃)のビフェニル型エポキシ
樹脂(油化シェル社製、YX−4000)、硬化剤(フ
ェノールノボラック樹脂、軟化点100℃)、平均粒径
21μmの球状溶融シリカ粉末、平均粒径6μmの破砕
溶融シリカ粉末、平均分子量2000、エポキシ当量1
20の液状エポキシ変成ポリブタジエン、硬化促進剤(
トリフェニルフォスフィン)、その他の添加剤を表1に
示す割合で混合したのち、実施例1と同様にして各物性
を測定した。
Examples 3 to 4 Biphenyl type epoxy resin (manufactured by Yuka Shell Co., Ltd., YX-4000) with melt viscosity 0.2P (150°C), curing agent (phenol novolak resin, softening point 100°C), average particle size Spherical fused silica powder of 21 μm, crushed fused silica powder with average particle size of 6 μm, average molecular weight 2000, epoxy equivalent 1
20 liquid epoxy modified polybutadiene, curing accelerator (
Triphenylphosphine) and other additives were mixed in the proportions shown in Table 1, and then the physical properties were measured in the same manner as in Example 1.

【0024】表1に示した結果より、本発明の半導体封
止用樹脂組成物は、流動性、強度、はんだ耐熱性に優れ
ていることがわかる。
From the results shown in Table 1, it can be seen that the resin composition for semiconductor encapsulation of the present invention is excellent in fluidity, strength, and soldering heat resistance.

【0025】比較例1 充填剤として、平均粒径21μmの球状溶融シリカ粉末
のみを用い、液状ポリブタジエンを用いずに表1に示す
割合で混合し、実施例1と同様にして各物性を測定した
。結果を表1に示す。
Comparative Example 1 Only spherical fused silica powder with an average particle size of 21 μm was used as a filler, and liquid polybutadiene was not used, but the mixture was mixed in the proportions shown in Table 1, and each physical property was measured in the same manner as in Example 1. . The results are shown in Table 1.

【0026】比較例2 充填剤として、平均粒径6μmの溶融破砕シリカ粉末の
みを用い、液状ポリブタジエンを用いずにて表1に示す
割合で混合し、実施例1と同様にして各物性を測定した
。結果を表1に示す。
Comparative Example 2 Using only fused crushed silica powder with an average particle size of 6 μm as a filler, without using liquid polybutadiene, the mixture was mixed in the proportions shown in Table 1, and the physical properties were measured in the same manner as in Example 1. did. The results are shown in Table 1.

【表1】[Table 1]

【0027】[0027]

【発明の効果】以上のように本発明の樹脂組成物を使用
すれば、流動性を維持した上で、低応力ではんだ耐熱性
に優れた硬化物を得ることができるので、これを用いる
ことによりクラックの発生しない良好な半導体を得るこ
とができる。
[Effects of the Invention] As described above, by using the resin composition of the present invention, it is possible to obtain a cured product with low stress and excellent soldering heat resistance while maintaining fluidity. Accordingly, a good semiconductor without cracks can be obtained.

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】  (a)150℃での溶融粘度が1P以
下のエポキシ樹脂又はこれを30重量%以上含有するエ
ポキシ樹脂100重量部に対して、 (b)充填用シリカ300〜1000重量部(c)エポ
キシ変性液状ポリブタジエン1〜50重量部(d)硬化
剤20〜100重量部 を必須の成分として配合してなる半導体封止用樹脂組成
物。
Claim 1: (a) 100 parts by weight of an epoxy resin having a melt viscosity of 1 P or less at 150°C or an epoxy resin containing 30% by weight or more thereof, (b) 300 to 1000 parts by weight of silica for filling ( c) 1 to 50 parts by weight of epoxy-modified liquid polybutadiene; and (d) 20 to 100 parts by weight of a curing agent. A resin composition for semiconductor encapsulation comprising as essential components.
【請求項2】  充填用シリカが粒径10μm以上の球
状シリカ2〜98重量%及び粒径10μm以下の破砕シ
リカ2〜98重量%よりなることを特徴とする請求項1
記載の半導体封止用樹脂組成物。
2. Claim 1, wherein the filling silica comprises 2 to 98% by weight of spherical silica having a particle size of 10 μm or more and 2 to 98% by weight of crushed silica having a particle size of 10 μm or less.
The resin composition for semiconductor encapsulation described above.
【請求項3】  硬化剤が下記一般式(1)【化1】 で表される少なくとも2個のフェノール性水酸基を有す
る多価フェノールであることを特徴とする請求項1記載
の半導体封止用樹脂組成物。
3. The semiconductor encapsulation method according to claim 1, wherein the curing agent is a polyhydric phenol having at least two phenolic hydroxyl groups represented by the following general formula (1): Resin composition.
JP5821591A 1991-02-28 1991-02-28 Resin composition for sealing semiconductor Withdrawn JPH04275325A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP5821591A JPH04275325A (en) 1991-02-28 1991-02-28 Resin composition for sealing semiconductor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP5821591A JPH04275325A (en) 1991-02-28 1991-02-28 Resin composition for sealing semiconductor

Publications (1)

Publication Number Publication Date
JPH04275325A true JPH04275325A (en) 1992-09-30

Family

ID=13077838

Family Applications (1)

Application Number Title Priority Date Filing Date
JP5821591A Withdrawn JPH04275325A (en) 1991-02-28 1991-02-28 Resin composition for sealing semiconductor

Country Status (1)

Country Link
JP (1) JPH04275325A (en)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0846728A3 (en) * 1996-12-04 1999-08-18 Sumitomo Bakelite Company Limited Liquid epoxy resin potting material
KR20000045210A (en) * 1998-12-30 2000-07-15 유현식 Epoxy resin composition for semiconductor encapsulation
JP2006188622A (en) * 2005-01-07 2006-07-20 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device
JP2006206696A (en) * 2005-01-26 2006-08-10 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device
JP2006225464A (en) * 2005-02-16 2006-08-31 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device
JP2007311821A (en) * 2007-07-23 2007-11-29 Matsushita Electric Works Ltd Resin sealed semiconductor device for surface mounting
EP1520867A3 (en) * 1996-12-27 2008-04-30 Nippon Soda Co., Ltd. Curatives for epoxy resin, curing accelerator, and epoxy resin composition
US7495060B2 (en) 1996-12-27 2009-02-24 Nippon Soda Co., Ltd. Tetrakisphenol and non-clathrated curing agent for epoxy resin

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0846728A3 (en) * 1996-12-04 1999-08-18 Sumitomo Bakelite Company Limited Liquid epoxy resin potting material
EP1520867A3 (en) * 1996-12-27 2008-04-30 Nippon Soda Co., Ltd. Curatives for epoxy resin, curing accelerator, and epoxy resin composition
US7495060B2 (en) 1996-12-27 2009-02-24 Nippon Soda Co., Ltd. Tetrakisphenol and non-clathrated curing agent for epoxy resin
KR20000045210A (en) * 1998-12-30 2000-07-15 유현식 Epoxy resin composition for semiconductor encapsulation
JP2006188622A (en) * 2005-01-07 2006-07-20 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device
JP2006206696A (en) * 2005-01-26 2006-08-10 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device
JP2006225464A (en) * 2005-02-16 2006-08-31 Sumitomo Bakelite Co Ltd Epoxy resin composition and semiconductor device
JP2007311821A (en) * 2007-07-23 2007-11-29 Matsushita Electric Works Ltd Resin sealed semiconductor device for surface mounting

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