JPH10335391A - Heating of substrate - Google Patents
Heating of substrateInfo
- Publication number
- JPH10335391A JPH10335391A JP13957597A JP13957597A JPH10335391A JP H10335391 A JPH10335391 A JP H10335391A JP 13957597 A JP13957597 A JP 13957597A JP 13957597 A JP13957597 A JP 13957597A JP H10335391 A JPH10335391 A JP H10335391A
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- mounting
- heating
- chip
- heated
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/341—Surface mounted components
- H05K3/3431—Leadless components
- H05K3/3436—Leadless components having an array of bottom contacts, e.g. pad grid array or ball grid array components
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/30—Assembling printed circuits with electric components, e.g. with resistor
- H05K3/32—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits
- H05K3/34—Assembling printed circuits with electric components, e.g. with resistor electrically connecting electric components or wires to printed circuits by soldering
- H05K3/3494—Heating methods for reflowing of solder
Landscapes
- Wire Bonding (AREA)
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、半導体ＩＣのフリ
ップチップ実装に関するものである。The present invention relates to flip-chip mounting of a semiconductor IC.
【０００２】[0002]
【従来の技術】電気製品の小型軽量化のため、電子回路
基板上への電子部品の実装は高密度化、ファイン化が進
められている。電子部品の主力である半導体部品におい
ては、従来はパッケージ形態が主流であったが、近年に
なって裸の半導体ＩＣチップを直接基板に接合する、い
わゆるフリップチップ実装技術の進展により、電子回路
基板の一層の小型軽量化が実現できるようになった。2. Description of the Related Art In order to reduce the size and weight of electric products, mounting of electronic components on electronic circuit boards has been advanced in density and fineness. In the past, semiconductor components, which are the mainstay of electronic components, have been in the form of packages, but in recent years, with the development of so-called flip-chip mounting technology, in which bare semiconductor IC chips are directly bonded to substrates, electronic circuit substrates have been developed. It has become possible to further reduce size and weight.
【０００３】フリップチップ実装を行う際に用いる実装
設備内には、基板を保持、固定するステージ部分があ
り、このステージ上に置かれた基板上にＩＣが供給、実
装される。一枚の基板上に一個のＩＣが実装されるケー
スは稀であり、多くの場合一枚の基板には複数個のＩＣ
が実装される。一般に、基板は複数個取りとなってお
り、一枚の基板が格子状に区切られており、各々の格子
の中にＩＣが同じ個数づつ実装され、すべての格子に所
定の個数のＩＣが実装されたあとで分割され、ＩＣが搭
載された各格子があらためて１つの電子回路基板もしく
は電子部品となる。A mounting facility used for flip-chip mounting includes a stage for holding and fixing a substrate. An IC is supplied and mounted on the substrate placed on the stage. It is rare that one IC is mounted on one board, and in many cases, multiple ICs are mounted on one board.
Is implemented. In general, a plurality of substrates are taken, one substrate is divided into a lattice shape, the same number of ICs are mounted in each lattice, and a predetermined number of ICs are mounted on all lattices. After being divided, each of the grids on which the ICs are mounted becomes a new electronic circuit board or electronic component.
【０００４】ＩＣを基板にフリップチップ実装すると
き、基板とＩＣの接合部分に接合のためのエネルギーを
加える必要があり、多くの場合加熱手段が用いられる。
実装の流れとしては、室温でＩＣを装着し後工程でリフ
ローなどにより一括加熱する方法が一般的ではあるが、
洗浄レスや工程の簡素化などの理由から装着と同時に接
合部分を加熱することが必要な場合がある。たとえば、
スズ（Ｓｎ）を接合材料として洗浄レスで実装する場合
は、装着と同時に熱を加えなければならない。この場
合、実際には、基板、ＩＣのどちらかもしくは双方を加
熱することにより、接合部分に熱を与える。基板を加熱
する場合は、基板をセットするステージをヒーターによ
り加熱し、ＩＣを加熱する場合は、ＩＣを基板上に搬送
・装着する吸着ツール等をヒーターにより加熱する。ス
テージは多くの場合その構造上、あるいは生産性向上の
ため、ステージ全体を常時加熱する。一方、ＩＣ加熱に
パルスヒート法を用いると、接合時のみかつ基板上の接
合箇所のみを加熱することが可能である。[0004] When flip-chip mounting an IC on a substrate, it is necessary to apply energy for bonding to a bonding portion between the substrate and the IC, and in many cases, heating means is used.
As a mounting flow, it is common to mount the IC at room temperature and heat it all at once by reflow in the post process.
In some cases, it is necessary to heat the joint at the same time as the mounting, for reasons such as no washing and simplification of the process. For example,
When tin (Sn) is used as a bonding material without cleaning, heat must be applied at the same time as mounting. In this case, actually, heat is applied to the joint by heating one or both of the substrate and the IC. When the substrate is heated, the stage on which the substrate is set is heated by a heater, and when the IC is heated, the suction tool or the like that transports and mounts the IC on the substrate is heated by the heater. In many cases, the entire stage is always heated due to its structure or to improve productivity. On the other hand, when the pulse heating method is used for IC heating, it is possible to heat only at the time of bonding and only at the bonding portion on the substrate.
【０００５】図３に従来のフリップチップ実装の概要が
示されている。図３において、４０はステージ、４１は
基板、４２、４３、４４、４５、４６は接合材料、４
７、４８、４９はＩＣチップ、５０は吸着ツールであ
る。図３の例では、基板上にあらかじめ接合材料として
メッキにより供給されたスズバンプ４２、４３、４４、
４５、４６が設けられており、この上にＩＣチップを実
装する。実装の順序は、接合箇所４２、４３、４４、４
５、４６の順番である。ＩＣチップが実装される前に、
まず１００℃〜１５０℃程度に加熱されたステージ４０
上に基板４１がセットされる。ここで、ステージ４０は
その全体が常時加熱されており、基板４１のセット前か
ら実装が完了し、基板が取り外されるまで温度は常に一
定である。ステージ４０にセットされた基板４１上に吸
着ツール５０により搬送されたＩＣチップが装着され
る。図３は、ＩＣチップ４７、４８はすでに実装済み
で、ＩＣチップ４９が実装されているときの様子を示し
ている。ＩＣチップ上の電極には接合のためのバンプが
形成されており、吸着ツール５０の内部にヒーターを組
み込み、加熱することによりＩＣ側からも接合部分を加
熱し接合効率を向上させ、なおかつ吸着ツール５０に超
音波をかけることにより接合する。図３では、たとえば
接合材料４２、４３は接合を完了しているが、接合材料
４４、４５、４６へのＩＣ実装が完了するまで、ステー
ジ４０による加熱が持続されることになり、熱による劣
化が進行する。また一方、例えば接合材料４６では、接
合材料４２、４３、４４、４５への実装が完了し４６へ
実装が始まるまでの間、ステージ４０による加熱が続け
られるため酸化が進行し、スズメッキ表面が酸化し接合
品質が劣化する。以上のように、従来はステージ４０全
体を常時加熱する基板加熱方法が用いられており、実装
時以外すなわち実装されるまでと実装後の時間帯におい
ても、不要な熱が接合部分に加えられることになり、実
装品質に悪影響をおよぼす結果となる。FIG. 3 shows an outline of the conventional flip chip mounting. In FIG. 3, 40 is a stage, 41 is a substrate, 42, 43, 44, 45, and 46 are bonding materials,
7, 48 and 49 are IC chips, and 50 is a suction tool. In the example of FIG. 3, tin bumps 42, 43, 44, which are supplied on the substrate in advance by plating as a bonding material,
45 and 46 are provided, and an IC chip is mounted thereon. The order of mounting is the joints 42, 43, 44, 4
The order is 5, 46. Before the IC chip is mounted,
First, the stage 40 heated to about 100 ° C. to 150 ° C.
The substrate 41 is set thereon. Here, the entire stage 40 is constantly heated, and the mounting is completed before setting the substrate 41, and the temperature is always constant until the substrate is removed. The IC chip transported by the suction tool 50 is mounted on the substrate 41 set on the stage 40. FIG. 3 shows a state where the IC chips 47 and 48 have already been mounted and the IC chip 49 has been mounted. Bumps for bonding are formed on the electrodes on the IC chip. A heater is incorporated inside the suction tool 50, and by heating, the bonding portion is also heated from the IC side to improve the bonding efficiency. 50 are joined by applying ultrasonic waves. In FIG. 3, for example, the bonding materials 42 and 43 have been bonded, but the heating by the stage 40 is continued until the IC mounting on the bonding materials 44, 45 and 46 is completed, and the deterioration due to heat is caused. Progresses. On the other hand, for example, in the case of the bonding material 46, the heating by the stage 40 is continued until the mounting on the bonding materials 42, 43, 44, and 45 is completed and the mounting on the bonding material 46 is started. And the joining quality is degraded. As described above, conventionally, the substrate heating method of constantly heating the entire stage 40 is used. Unnecessary heat is applied to the bonding portion other than at the time of mounting, that is, even before mounting and during the time period after mounting. And adversely affect the mounting quality.
【０００６】[0006]
【本発明が解決しようとする課題】前述した通り、従来
の基板加熱方法では、一枚の基板上へ複数個実装する場
合、ＩＣ実装がすべて完了するまで常時加熱される。し
たがって、一つの接合箇所に、実装時のみならずそれ以
外の時間帯すなわち実装されるまでと実装後も、基板が
ステージに取りつけられてから取り外されるまでの間、
常時熱が加わり続けることになる。接合材料が酸化され
やすい物質、たとえばスズ（Ｓｎ）やはんだ（Ｓｎ・Ｐ
ｂの合金）である場合や、接合材料と接合母材（ＩＣ、
基板の電極）間で拡散などの反応が生じやすい組合せの
場合は、実装する時以外に必要以上の加熱を行うことは
好ましくない。その一例として、基板上の電極がスズめ
っきバンプである場合、実装までの待ち時間の間にスズ
表面が酸化されて接合品質に悪影響を与え、また接合後
の加熱により接合部分に熱ストレスが加わり、信頼性低
下の原因となる。As described above, in the conventional substrate heating method, when a plurality of substrates are mounted on one substrate, the substrate is constantly heated until all the IC mounting is completed. Therefore, at one joint, not only at the time of mounting but also at other times, that is, until after mounting and after mounting, until the board is mounted on the stage until it is removed.
Heat will always be applied. A substance to which the bonding material is easily oxidized, for example, tin (Sn) or solder (Sn · P)
b) or a bonding material and a bonding base material (IC,
In the case of a combination that easily causes a reaction such as diffusion between the electrodes of the substrate, it is not preferable to perform unnecessary heating other than when mounting. For example, if the electrodes on the board are tin-plated bumps, the tin surface is oxidized during the waiting time before mounting, which has an adverse effect on the bonding quality, and heat stress is applied to the bonding part by heating after bonding. , Causing a decrease in reliability.
【０００７】ＩＣのフリップチップ実装においては、Ｉ
Ｃと基板の接合の高品質化・高信頼性化が要求されてい
る。本発明は、基板とＩＣのフリップチップ接合におい
て、上記要求を実現できるような基板加熱方法を提供す
る。In flip-chip mounting of an IC, I
There is a demand for higher quality and higher reliability of bonding between C and the substrate. The present invention provides a substrate heating method capable of fulfilling the above requirements in flip chip bonding of a substrate and an IC.
【０００８】[0008]
【課題を解決するための手段】この課題を解決するため
本発明は、ＩＣ実装箇所のみ、かつ実装時のみ基板を加
熱するものである。これにより接合材料の酸化や接合後
の熱ストレスが低減でき、接合の高品質化・高信頼性化
が可能となる。SUMMARY OF THE INVENTION In order to solve this problem, the present invention is to heat a substrate only at an IC mounting portion and only at the time of mounting. As a result, oxidation of the bonding material and thermal stress after bonding can be reduced, and high quality and high reliability of bonding can be achieved.
【０００９】[0009]
【発明の実施の形態】本発明の請求項１に記載の発明
は、半導体ＩＣフリップチップ実装において、ＩＣを基
板に実装する際に、ＩＣが実装される箇所のみを加熱
し、順次ＩＣを基板に実装することを特徴とする基板加
熱方法であり、実装済みのＩＣチップや未実装の接合部
分は加熱されないので、これらの部分における劣化は進
行せず、接合の高品質化および高信頼性化を果たす作用
を有する。DESCRIPTION OF THE PREFERRED EMBODIMENTS According to the first aspect of the present invention, in a semiconductor IC flip chip mounting, when mounting an IC on a substrate, only the portion where the IC is mounted is heated, and the IC is sequentially mounted on the substrate. This is a method of heating the substrate characterized by mounting on a substrate. Since the mounted IC chip and the unmounted joints are not heated, the deterioration in these parts does not progress, resulting in higher quality and higher reliability of the joints. Has the effect of fulfilling
【００１０】請求項２に記載の発明は、ＩＣが複数個実
装される基板を保持するステージ内に、個別に加熱ヒー
ターが組み込まれた複数個の加熱ツールを有し、ＩＣ実
装時に実装部分の加熱ヒーターのみを通電して、局所的
に加熱し、順次ＩＣを基板に実装することを特徴とする
請求項１記載の基板加熱方法であり、基板を局時および
局所的に加熱を行う作用を有する。According to a second aspect of the present invention, a stage for holding a substrate on which a plurality of ICs are mounted has a plurality of heating tools each having a built-in heating heater. 2. The method for heating a substrate according to claim 1, wherein only the heater is energized to locally heat the IC, and the IC is sequentially mounted on the substrate. Have.
【００１１】請求項３に記載の発明は、ＩＣが複数個実
装される基板を保持するステージ内に、基板の直下で上
下および前後左右に移動可能な加熱ツールを有し、前記
加熱ツールが基板の実装部分に移動して基板に接触する
ことにより、ＩＣの実装時に実装部分のみを局所的に加
熱し、順次ＩＣを基板に実装することを特徴とする請求
項１記載の基板加熱方法であり、請求項２記載の発明と
同様、基板の局時および局所的加熱を行う作用を有す
る。According to a third aspect of the present invention, there is provided a stage for holding a substrate on which a plurality of ICs are mounted, comprising a heating tool which can be moved up and down, front and rear, right and left immediately below the substrate, and wherein the heating tool is 2. The substrate heating method according to claim 1, wherein the substrate is heated only locally at the time of mounting the IC by moving to the mounting portion and contacting the substrate, and the IC is sequentially mounted on the substrate. In the same manner as the second aspect of the invention, it has an effect of performing local and local heating of the substrate.
【００１２】以下、本発明の実施の形態について、図１
および図２を用いて説明する。 （実施の形態１）図１に、本発明の実施の形態における
ＩＣ実装の概要が示されている。図１において、１、
２、３、４、５はステージ機能を兼ねた固定加熱ツール
である。６は基板、７、８、９、１０、１１は接合材料
で、従来例と同様スズメッキバンプである。１２、１
３、１４はＩＣチップ、１５はＩＣ搬送・装着用の吸着
ツールである。ここで加熱ツール１〜５にはそれぞれ個
別にヒーターが組み込まれており、各々単独で通電加熱
することが可能である。実装の流れとしては、まず、室
温状態の加熱ツール１〜５上に基板６がセットされる。
基板がセットされたときは、まだ加熱ツール１〜５のす
べてが通電加熱されていない。次に、ＩＣチップが吸着
ツール１５により基板上に装着される。たとえば、ＩＣ
チップ１２が装着されるときは、加熱ツール１のみが通
電加熱され接合材料７を加熱し、ＩＣチップ１２の実装
が完了すると、加熱ツール１の通電は停止し、加熱を中
止する。次に、ＩＣチップ１３を装着するときは、加熱
ツール２のみが加熱されＩＣチップ１３の実装が終わる
と加熱を停止する。図１は、ＩＣチップ１４が実装され
ている状態を示しており、このときは加熱ツール３のみ
が通電されている。以上のような方法で実装部分の加熱
ツールのみが通電され、これを繰り返すことによりＩＣ
実装が行われる。したがって図１の状態では、実装済み
のＩＣチップ１２、１３の接合材料７、８および未実装
の接合材料１０、１１は加熱されないので劣化が進行せ
ず、その結果として高品質のＩＣ実装が実現できる。 （実施の形態２）図２には実施の形態２におけるＩＣ実
装の概要が示されている。図２において、２１は上下左
右前後に移動可能な加熱ツール、２２は基板保持用の金
具、２３は基板である。２４、２５、２６、２７、２８
は接合材料としてのスズメッキバンプ、２９、３０、３
１はＩＣチップ、３２はＩＣチップ搬送・装着用の吸着
ツールである。実装の流れとしては、まず、基板２３が
金具２２により所定の位置に固定される。次に、ＩＣチ
ップが吸着ツール３２により搬送され、基板上に装着、
実装される。このとき加熱ツール２１は実装位置に移動
し基板の実装部分のみを加熱する。たとえばＩＣチップ
２９を実装するときは、加熱ツールはいったん基板から
離れて接合材料２４の直下に移動し、ＩＣチップ２９の
装着と同時に上昇し、基板２３に接触し接合材料２４の
みを加熱する。実装が終わると加熱ツール２１は基板か
ら離れた位置で待機する。次に、ＩＣチップ３０を実装
するときも、同様の動作で装着と同時に接合材料２５の
直下の基板表面を接触加熱し、実装が終わると基板から
離れ待機する。図２はＩＣチップ３１が実装されている
状態を示しており、このあと接合材料２７、２８上への
ＩＣチップの実装も同様にして行われる。以上のような
基板加熱方法でＩＣチップを実装すれば、実施の形態１
と同様、実装時に実装分のＩＣチップの接合材料のみを
加熱するので、それ以外の部分の熱による劣化が防止で
き、結果として高品質なＩＣ実装が実現できる。Hereinafter, an embodiment of the present invention will be described with reference to FIG.
This will be described with reference to FIG. (Embodiment 1) FIG. 1 shows an outline of IC mounting in an embodiment of the present invention. In FIG. 1, 1,
Reference numerals 2, 3, 4, and 5 are fixed heating tools that also have a stage function. Reference numeral 6 denotes a substrate, and 7, 8, 9, 10, and 11 denote bonding materials, which are tin-plated bumps as in the conventional example. 12, 1
Reference numerals 3 and 14 denote IC chips, and reference numeral 15 denotes a suction tool for transporting and mounting the IC. Here, heaters are individually incorporated in the heating tools 1 to 5, respectively, and each of them can be independently heated by energization. As a mounting flow, first, the substrate 6 is set on the heating tools 1 to 5 at room temperature.
When the substrate is set, all of the heating tools 1 to 5 have not been electrically heated yet. Next, the IC chip is mounted on the substrate by the suction tool 15. For example, IC
When the chip 12 is mounted, only the heating tool 1 is energized and heated to heat the bonding material 7, and when the mounting of the IC chip 12 is completed, the energization of the heating tool 1 is stopped and the heating is stopped. Next, when the IC chip 13 is mounted, only the heating tool 2 is heated, and when the mounting of the IC chip 13 is completed, the heating is stopped. FIG. 1 shows a state in which the IC chip 14 is mounted. At this time, only the heating tool 3 is energized. Only the heating tool in the mounting part is energized in the manner described above, and by repeating this, the IC
Implementation is performed. Therefore, in the state of FIG. 1, the bonding materials 7 and 8 of the mounted IC chips 12 and 13 and the bonding materials 10 and 11 of the unmounted IC chips are not heated, so that the deterioration does not proceed, and as a result, high-quality IC mounting is realized. it can. (Embodiment 2) FIG. 2 shows an outline of IC mounting in Embodiment 2. In FIG. 2, reference numeral 21 denotes a heating tool that can move up, down, left, and right and back, 22 denotes a metal fitting for holding a substrate, and 23 denotes a substrate. 24, 25, 26, 27, 28
Are tin-plated bumps as joining materials, 29, 30, 3
Reference numeral 1 denotes an IC chip, and 32 denotes a suction tool for transporting and mounting the IC chip. As for the flow of mounting, first, the substrate 23 is fixed at a predetermined position by the metal fitting 22. Next, the IC chip is transported by the suction tool 32 and mounted on the substrate.
Implemented. At this time, the heating tool 21 moves to the mounting position and heats only the mounting portion of the board. For example, when mounting the IC chip 29, the heating tool once moves away from the substrate and immediately below the bonding material 24, rises simultaneously with the mounting of the IC chip 29, contacts the substrate 23, and heats only the bonding material 24. When the mounting is completed, the heating tool 21 waits at a position away from the substrate. Next, when the IC chip 30 is mounted, the surface of the substrate immediately below the bonding material 25 is contact-heated at the same time when the IC chip 30 is mounted by the same operation. FIG. 2 shows a state in which the IC chip 31 is mounted. Thereafter, the mounting of the IC chip on the bonding materials 27 and 28 is performed in the same manner. When the IC chip is mounted by the above-described substrate heating method, the first embodiment
In the same manner as described above, only the bonding material of the mounted IC chip is heated at the time of mounting, so that the other parts can be prevented from being deteriorated due to heat, and as a result, high quality IC mounting can be realized.
【００１３】なお、上記の実施の態様においては、加熱
ツールはＩＣチップが実装される箇所のみを加熱してい
るが、これに限定されず実装箇所の周辺まで加熱するこ
ともできる。In the above embodiment, the heating tool heats only the portion where the IC chip is mounted. However, the present invention is not limited to this, and the heating tool can also heat the periphery of the mounting portion.
【００１４】[0014]
【発明の効果】以上のように本発明によれば、実装時に
実装部分のみを局所的に加熱することにより、実装済み
のＩＣや未実装の接合部分は加熱されず、これらの部分
における熱による劣化の進行は防止され、高品質なフリ
ップチップ実装を実現することができる。As described above, according to the present invention, only the mounting portion is locally heated at the time of mounting, so that the mounted IC and the unmounted bonding portion are not heated, but are heated by these portions. The progress of deterioration is prevented, and high quality flip chip mounting can be realized.
【図１】本発明による基板加熱方法およびＩＣチップ実
装の概要図である。FIG. 1 is a schematic view of a substrate heating method and an IC chip mounting according to the present invention.
【図２】本発明による他の基板加熱方法およびＩＣチッ
プ実装の概要図である。FIG. 2 is a schematic view of another substrate heating method and IC chip mounting according to the present invention.
【図３】従来の基板加熱方法およびＩＣチップ実装の概
要図である。FIG. 3 is a schematic view of a conventional substrate heating method and IC chip mounting.
１、２、３、４、５、２１ 基板加熱ツール ６、２３、４１ 基板 ７、８、９、１０、１１、２４、２５、２６ 接合材料 ２７、２８、４２、４３、４４、４５、４６ 接合材料 １２、１３、１４、２９、３０、３１、４７、４８、４
９ ＩＣチップ １５、３２、５０ 吸着ツール ２２ 基板固定金具 ４０ ステージ1, 2, 3, 4, 5, 21 Substrate heating tool 6, 23, 41 Substrate 7, 8, 9, 10, 11, 24, 25, 26 Bonding material 27, 28, 42, 43, 44, 45, 46 Bonding material 12, 13, 14, 29, 30, 31, 47, 48, 4
9 IC chip 15, 32, 50 Suction tool 22 Substrate fixing bracket 40 Stage
Claims (3)
て、ＩＣを基板に実装する際に、ＩＣが実装される箇所
のみを加熱し、順次ＩＣを基板に実装することを特徴と
する基板加熱方法In a semiconductor IC flip chip mounting method, when mounting an IC on a substrate, only a portion where the IC is mounted is heated and the IC is mounted on the substrate sequentially.
ステージ内に、個別に加熱ヒーターが組み込まれた複数
個の加熱ツールを有し、ＩＣ実装時に実装部分の加熱ヒ
ーターのみを通電して局所的に加熱し、順次ＩＣを基板
に実装することを特徴とする請求項１記載の基板加熱方
法2. A stage for holding a substrate on which a plurality of ICs are mounted has a plurality of heating tools in which heating heaters are individually incorporated. 2. The substrate heating method according to claim 1, wherein the substrate is locally heated and the ICs are sequentially mounted on the substrate.
ステージ内に、基板の直下で上下および前後左右に移動
可能な加熱ツールを有し、前記加熱ツールが基板の実装
部分に移動して基板に接触することにより、ＩＣの実装
時に実装部分のみを局所的に加熱し、順次ＩＣを基板に
実装することを特徴とする請求項１記載の基板加熱方法3. A stage for holding a substrate on which a plurality of ICs are mounted has a heating tool movable up and down, front and rear, and left and right just below the substrate, and the heating tool moves to a mounting portion of the substrate. 2. The substrate heating method according to claim 1, wherein only the mounting portion is locally heated when the IC is mounted by contacting the substrate, and the IC is sequentially mounted on the substrate.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13957597A JP3442615B2 (en) | 1997-05-29 | 1997-05-29 | Substrate heating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP13957597A JP3442615B2 (en) | 1997-05-29 | 1997-05-29 | Substrate heating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPH10335391A true JPH10335391A (en) | 1998-12-18 |
| JP3442615B2 JP3442615B2 (en) | 2003-09-02 |
Family
ID=15248464
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP13957597A Expired - Fee Related JP3442615B2 (en) | 1997-05-29 | 1997-05-29 | Substrate heating method |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JP3442615B2 (en) |
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