JPH10330932A5 - - Google Patents

Info

Publication number
JPH10330932A5
JPH10330932A5 JP1997155980A JP15598097A JPH10330932A5 JP H10330932 A5 JPH10330932 A5 JP H10330932A5 JP 1997155980 A JP1997155980 A JP 1997155980A JP 15598097 A JP15598097 A JP 15598097A JP H10330932 A5 JPH10330932 A5 JP H10330932A5
Authority
JP
Japan
Prior art keywords
thin film
region
hole
selective
generates
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP1997155980A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10330932A (ja
Filing date
Publication date
Application filed filed Critical
Priority to JP9155980A priority Critical patent/JPH10330932A/ja
Priority claimed from JP9155980A external-priority patent/JPH10330932A/ja
Priority to TW086119762A priority patent/TW354407B/zh
Priority to US09/013,288 priority patent/US6083361A/en
Priority to KR1019980003965A priority patent/KR100284248B1/ko
Publication of JPH10330932A publication Critical patent/JPH10330932A/ja
Publication of JPH10330932A5 publication Critical patent/JPH10330932A5/ja
Pending legal-status Critical Current

Links

JP9155980A 1997-05-28 1997-05-28 スパッタリング装置 Pending JPH10330932A (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP9155980A JPH10330932A (ja) 1997-05-28 1997-05-28 スパッタリング装置
TW086119762A TW354407B (en) 1997-05-28 1997-12-26 Sputtering device (2)
US09/013,288 US6083361A (en) 1997-05-28 1998-01-26 Sputter device
KR1019980003965A KR100284248B1 (ko) 1997-05-28 1998-02-11 스퍼터링장치

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9155980A JPH10330932A (ja) 1997-05-28 1997-05-28 スパッタリング装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2007216826A Division JP4719195B2 (ja) 2007-08-23 2007-08-23 スパッタリング方法

Publications (2)

Publication Number Publication Date
JPH10330932A JPH10330932A (ja) 1998-12-15
JPH10330932A5 true JPH10330932A5 (enExample) 2005-11-10

Family

ID=15617732

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9155980A Pending JPH10330932A (ja) 1997-05-28 1997-05-28 スパッタリング装置

Country Status (4)

Country Link
US (1) US6083361A (enExample)
JP (1) JPH10330932A (enExample)
KR (1) KR100284248B1 (enExample)
TW (1) TW354407B (enExample)

Families Citing this family (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3505459B2 (ja) * 2000-02-10 2004-03-08 豊明 平田 ミラートロンスパッタ装置
US7541283B2 (en) * 2002-08-30 2009-06-02 Tokyo Electron Limited Plasma processing method and plasma processing apparatus
US7147759B2 (en) * 2002-09-30 2006-12-12 Zond, Inc. High-power pulsed magnetron sputtering
US6896773B2 (en) * 2002-11-14 2005-05-24 Zond, Inc. High deposition rate sputtering
US20050103620A1 (en) * 2003-11-19 2005-05-19 Zond, Inc. Plasma source with segmented magnetron cathode
US9771648B2 (en) * 2004-08-13 2017-09-26 Zond, Inc. Method of ionized physical vapor deposition sputter coating high aspect-ratio structures
US9123508B2 (en) * 2004-02-22 2015-09-01 Zond, Llc Apparatus and method for sputtering hard coatings
US7095179B2 (en) * 2004-02-22 2006-08-22 Zond, Inc. Methods and apparatus for generating strongly-ionized plasmas with ionizational instabilities
US7601246B2 (en) * 2004-09-29 2009-10-13 Lam Research Corporation Methods of sputtering a protective coating on a semiconductor substrate
TWI349042B (en) * 2006-02-09 2011-09-21 Sputtering system providing large area sputtering and plasma-assisted reactive gas dissociation
TWI386502B (zh) * 2007-05-25 2013-02-21 Hon Hai Prec Ind Co Ltd 濺鍍承載裝置
JP2008300749A (ja) * 2007-06-01 2008-12-11 Ulvac Japan Ltd 半導体装置の製造方法および成膜装置
JP5669417B2 (ja) * 2010-03-26 2015-02-12 シチズンホールディングス株式会社 半導体装置の製造方法
JP5611803B2 (ja) * 2010-12-21 2014-10-22 キヤノンアネルバ株式会社 反応性スパッタリング装置
US10655212B2 (en) 2016-12-15 2020-05-19 Honeywell Internatonal Inc Sputter trap having multimodal particle size distribution
CN111850471B (zh) * 2019-04-25 2023-05-12 芝浦机械电子装置株式会社 成膜装置以及成膜方法
JP7313308B2 (ja) * 2019-04-25 2023-07-24 芝浦メカトロニクス株式会社 成膜装置及び成膜方法

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4725345A (en) * 1985-04-22 1988-02-16 Kabushiki Kaisha Kenwood Method for forming a hard carbon thin film on article and applications thereof
US4778582A (en) * 1987-06-02 1988-10-18 International Business Machines Corporation Process for making a thin film metal alloy magnetic recording disk with a hydrogenated carbon overcoat
KR940008936B1 (ko) * 1990-02-15 1994-09-28 가부시끼가이샤 도시바 고순도 금속재와 그 성질을 이용한 반도체 장치 및 그 제조방법
JPH0794431A (ja) * 1993-04-23 1995-04-07 Canon Inc アモルファス半導体用基板、該基板を有するアモルファス半導体基板、及び該アモルファス半導体基板の製造方法
US5556474A (en) * 1993-12-14 1996-09-17 Nissin Electric Co., Ltd. Plasma processing apparatus
FR2726579A1 (fr) * 1994-11-07 1996-05-10 Neuville Stephane Procede de depot d'un revetement protecteur de type pseudo carbonne diamant amorphe
US5772771A (en) * 1995-12-13 1998-06-30 Applied Materials, Inc. Deposition chamber for improved deposition thickness uniformity

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