JPH1032191A - マルチコンポーネントアロイのエッチングのためのプラズマプロセス - Google Patents

マルチコンポーネントアロイのエッチングのためのプラズマプロセス

Info

Publication number
JPH1032191A
JPH1032191A JP9058241A JP5824197A JPH1032191A JP H1032191 A JPH1032191 A JP H1032191A JP 9058241 A JP9058241 A JP 9058241A JP 5824197 A JP5824197 A JP 5824197A JP H1032191 A JPH1032191 A JP H1032191A
Authority
JP
Japan
Prior art keywords
plasma
substrate
ions
gas
decomposed
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP9058241A
Other languages
English (en)
Japanese (ja)
Inventor
Diana Xiaobing Ma
シャオビン マ ダイアナ
Daisuke Tajima
大輔 田島
Allen Zhao
ザオ アレン
Peter K Loewenhardt
ケー． ローヴェンハート ピーター
Timothy R Webb
アール． ウェッブ ティモシー
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Applied Materials Inc
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of JPH1032191A publication Critical patent/JPH1032191A/ja
Withdrawn legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25F—PROCESSES FOR THE ELECTROLYTIC REMOVAL OF MATERIALS FROM OBJECTS; APPARATUS THEREFOR
    • C25F3/00—Electrolytic etching or polishing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F4/00—Processes for removing metallic material from surfaces, not provided for in group C23F1/00 or C23F3/00
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/26—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials
    • H10P50/264—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means
    • H10P50/266—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only
    • H10P50/267—Dry etching; Plasma etching; Reactive-ion etching of conductive or resistive materials by chemical means by vapour etching only using plasmas

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Analytical Chemistry (AREA)
  • Plasma & Fusion (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Electrochemistry (AREA)
  • Drying Of Semiconductors (AREA)
  • ing And Chemical Polishing (AREA)
JP9058241A 1996-02-05 1997-02-05 マルチコンポーネントアロイのエッチングのためのプラズマプロセス Withdrawn JPH1032191A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US08/596,960 US5779926A (en) 1994-09-16 1996-02-05 Plasma process for etching multicomponent alloys
US08/596960 1996-02-05

Publications (1)

Publication Number Publication Date
JPH1032191A true JPH1032191A (ja) 1998-02-03

Family

ID=24389459

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9058241A Withdrawn JPH1032191A (ja) 1996-02-05 1997-02-05 マルチコンポーネントアロイのエッチングのためのプラズマプロセス

Country Status (5)

Country Link
US (1) US5779926A (https=)
EP (1) EP0788147A3 (https=)
JP (1) JPH1032191A (https=)
KR (1) KR100443118B1 (https=)
TW (1) TW316324B (https=)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002510841A (ja) * 1998-03-31 2002-04-09 ラム リサーチ コーポレーション 並列アンテナ・トランスフォーマー・カップルド・プラズマ発生システム

Families Citing this family (39)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6090717A (en) * 1996-03-26 2000-07-18 Lam Research Corporation High density plasma etching of metallization layer using chlorine and nitrogen
US6008139A (en) * 1996-06-17 1999-12-28 Applied Materials Inc. Method of etching polycide structures
US5866483A (en) * 1997-04-04 1999-02-02 Applied Materials, Inc. Method for anisotropically etching tungsten using SF6, CHF3, and N2
US6087266A (en) * 1997-06-27 2000-07-11 Lam Research Corporation Methods and apparatus for improving microloading while etching a substrate
US6071820A (en) * 1997-09-30 2000-06-06 Siemens Aktiengesellschaft Method for patterning integrated circuit conductors
JPH11176805A (ja) * 1997-11-14 1999-07-02 Siemens Ag 半導体装置の製造方法
US6177337B1 (en) * 1998-01-06 2001-01-23 International Business Machines Corporation Method of reducing metal voids in semiconductor device interconnection
US6177353B1 (en) * 1998-09-15 2001-01-23 Infineon Technologies North America Corp. Metallization etching techniques for reducing post-etch corrosion of metal lines
JP2002530844A (ja) * 1998-11-12 2002-09-17 アプライド マテリアルズ インコーポレイテッド 残渣を残さずにアルミニウム及びその合金を異方性エッチングするための方法
US6797189B2 (en) 1999-03-25 2004-09-28 Hoiman (Raymond) Hung Enhancement of silicon oxide etch rate and nitride selectivity using hexafluorobutadiene or other heavy perfluorocarbon
US6544429B1 (en) 1999-03-25 2003-04-08 Applied Materials Inc. Enhancement of silicon oxide etch rate and substrate selectivity with xenon addition
US20020003126A1 (en) * 1999-04-13 2002-01-10 Ajay Kumar Method of etching silicon nitride
US6383938B2 (en) 1999-04-21 2002-05-07 Alcatel Method of anisotropic etching of substrates
US6352081B1 (en) 1999-07-09 2002-03-05 Applied Materials, Inc. Method of cleaning a semiconductor device processing chamber after a copper etch process
JP2001035808A (ja) * 1999-07-22 2001-02-09 Semiconductor Energy Lab Co Ltd 配線およびその作製方法、この配線を備えた半導体装置、ドライエッチング方法
US6402974B1 (en) 1999-07-27 2002-06-11 Applied Materials, Inc. Method for etching polysilicon to have a smooth surface
US6399507B1 (en) * 1999-09-22 2002-06-04 Applied Materials, Inc. Stable plasma process for etching of films
US6613682B1 (en) 1999-10-21 2003-09-02 Applied Materials Inc. Method for in situ removal of a dielectric antireflective coating during a gate etch process
US7013834B2 (en) * 2002-04-19 2006-03-21 Nordson Corporation Plasma treatment system
US7541283B2 (en) * 2002-08-30 2009-06-02 Tokyo Electron Limited Plasma processing method and plasma processing apparatus
US7270761B2 (en) * 2002-10-18 2007-09-18 Appleid Materials, Inc Fluorine free integrated process for etching aluminum including chamber dry clean
US7262137B2 (en) * 2004-02-18 2007-08-28 Northrop Grumman Corporation Dry etching process for compound semiconductors
US20050241671A1 (en) * 2004-04-29 2005-11-03 Dong Chun C Method for removing a substance from a substrate using electron attachment
US20060075968A1 (en) * 2004-10-12 2006-04-13 Applied Materials, Inc. Leak detector and process gas monitor
TWI333808B (en) * 2005-05-05 2010-11-21 Himax Tech Inc A method of manufacturing a film printed circuit board
US7695633B2 (en) * 2005-10-18 2010-04-13 Applied Materials, Inc. Independent control of ion density, ion energy distribution and ion dissociation in a plasma reactor
KR100831572B1 (ko) * 2005-12-29 2008-05-21 동부일렉트로닉스 주식회사 반도체 소자의 배선 형성방법
US20070246163A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Plasma reactor apparatus with independent capacitive and inductive plasma sources
US7727413B2 (en) * 2006-04-24 2010-06-01 Applied Materials, Inc. Dual plasma source process using a variable frequency capacitively coupled source to control plasma ion density
US20070245958A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Dual plasma source process using a variable frequency capacitively coupled source for controlling ion radial distribution
US20070246443A1 (en) * 2006-04-24 2007-10-25 Applied Materials, Inc. Process using combined capacitively and inductively coupled plasma process for controlling plasma ion dissociation
US7780864B2 (en) * 2006-04-24 2010-08-24 Applied Materials, Inc. Process using combined capacitively and inductively coupled plasma sources for controlling plasma ion radial distribution
US7645357B2 (en) * 2006-04-24 2010-01-12 Applied Materials, Inc. Plasma reactor apparatus with a VHF capacitively coupled plasma source of variable frequency
US8476125B2 (en) 2006-12-15 2013-07-02 University Of South Carolina Fabrication technique for high frequency, high power group III nitride electronic devices
US8338273B2 (en) * 2006-12-15 2012-12-25 University Of South Carolina Pulsed selective area lateral epitaxy for growth of III-nitride materials over non-polar and semi-polar substrates
US8076778B2 (en) * 2009-09-30 2011-12-13 Macronix International Co., Ltd. Method for preventing Al-Cu bottom damage using TiN liner
US8796097B2 (en) 2012-04-26 2014-08-05 University Of South Carolina Selectively area regrown III-nitride high electron mobility transistor
JP2015056578A (ja) * 2013-09-13 2015-03-23 株式会社東芝 半導体装置の製造方法
EP4611022A1 (en) * 2024-02-29 2025-09-03 IMEC vzw Plasma etching method

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4256534A (en) * 1978-07-31 1981-03-17 Bell Telephone Laboratories, Incorporated Device fabrication by plasma etching
US4579618A (en) * 1984-01-06 1986-04-01 Tegal Corporation Plasma reactor apparatus
GB2171360A (en) * 1985-02-19 1986-08-28 Oerlikon Buehrle Inc Etching aluminum/copper alloy films
JP2673380B2 (ja) * 1990-02-20 1997-11-05 三菱電機株式会社 プラズマエッチングの方法
EP0535540A3 (en) * 1991-10-02 1994-10-19 Siemens Ag Etching process for aluminium-containing coatings
US5350488A (en) * 1992-12-10 1994-09-27 Applied Materials, Inc. Process for etching high copper content aluminum films
US5387556A (en) * 1993-02-24 1995-02-07 Applied Materials, Inc. Etching aluminum and its alloys using HC1, C1-containing etchant and N.sub.2
US5783101A (en) * 1994-09-16 1998-07-21 Applied Materials, Inc. High etch rate residue free metal etch process with low frequency high power inductive coupled plasma

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002510841A (ja) * 1998-03-31 2002-04-09 ラム リサーチ コーポレーション 並列アンテナ・トランスフォーマー・カップルド・プラズマ発生システム

Also Published As

Publication number Publication date
EP0788147A2 (en) 1997-08-06
EP0788147A3 (en) 1997-10-29
KR100443118B1 (ko) 2004-11-03
US5779926A (en) 1998-07-14
TW316324B (https=) 1997-09-21
KR970062080A (ko) 1997-09-12

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Legal Events

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A300 Application deemed to be withdrawn because no request for examination was validly filed

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Effective date: 20040406