JPH10303142A - 半導体装置及びその作製方法 - Google Patents

半導体装置及びその作製方法

Info

Publication number
JPH10303142A
JPH10303142A JP11880797A JP11880797A JPH10303142A JP H10303142 A JPH10303142 A JP H10303142A JP 11880797 A JP11880797 A JP 11880797A JP 11880797 A JP11880797 A JP 11880797A JP H10303142 A JPH10303142 A JP H10303142A
Authority
JP
Japan
Prior art keywords
film
titanium
electrode
forming
opening
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP11880797A
Other languages
English (en)
Japanese (ja)
Other versions
JPH10303142A5 (enExample
Inventor
Setsuo Nakajima
節男 中嶋
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Semiconductor Energy Laboratory Co Ltd
Original Assignee
Semiconductor Energy Laboratory Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Semiconductor Energy Laboratory Co Ltd filed Critical Semiconductor Energy Laboratory Co Ltd
Priority to JP11880797A priority Critical patent/JPH10303142A/ja
Publication of JPH10303142A publication Critical patent/JPH10303142A/ja
Publication of JPH10303142A5 publication Critical patent/JPH10303142A5/ja
Withdrawn legal-status Critical Current

Links

Landscapes

  • Liquid Crystal (AREA)
  • Thin Film Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP11880797A 1997-04-22 1997-04-22 半導体装置及びその作製方法 Withdrawn JPH10303142A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP11880797A JPH10303142A (ja) 1997-04-22 1997-04-22 半導体装置及びその作製方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP11880797A JPH10303142A (ja) 1997-04-22 1997-04-22 半導体装置及びその作製方法

Publications (2)

Publication Number Publication Date
JPH10303142A true JPH10303142A (ja) 1998-11-13
JPH10303142A5 JPH10303142A5 (enExample) 2005-03-10

Family

ID=14745621

Family Applications (1)

Application Number Title Priority Date Filing Date
JP11880797A Withdrawn JPH10303142A (ja) 1997-04-22 1997-04-22 半導体装置及びその作製方法

Country Status (1)

Country Link
JP (1) JPH10303142A (enExample)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002202527A (ja) * 2000-12-28 2002-07-19 Nec Corp アクティブマトリクス型液晶表示装置
JP2007025703A (ja) * 2005-07-20 2007-02-01 Samsung Electronics Co Ltd アレイ基板及びその製造方法並びに表示装置
JP2008262227A (ja) * 2008-07-16 2008-10-30 Mitsubishi Electric Corp 表示装置
WO2012117692A1 (ja) * 2011-02-28 2012-09-07 シャープ株式会社 電極基板並びにそれを備えた表示装置及びタッチパネル

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002202527A (ja) * 2000-12-28 2002-07-19 Nec Corp アクティブマトリクス型液晶表示装置
JP2007025703A (ja) * 2005-07-20 2007-02-01 Samsung Electronics Co Ltd アレイ基板及びその製造方法並びに表示装置
JP2008262227A (ja) * 2008-07-16 2008-10-30 Mitsubishi Electric Corp 表示装置
WO2012117692A1 (ja) * 2011-02-28 2012-09-07 シャープ株式会社 電極基板並びにそれを備えた表示装置及びタッチパネル
JP5572757B2 (ja) * 2011-02-28 2014-08-13 シャープ株式会社 電極基板並びにそれを備えた表示装置及びタッチパネル

Similar Documents

Publication Publication Date Title
JP6495973B2 (ja) 液晶表示装置
KR101057412B1 (ko) 반도체 장치 및 그 제작 방법
US7538011B2 (en) Method of manufacturing a semiconductor device
JP4683688B2 (ja) 液晶表示装置の作製方法
US8318554B2 (en) Method of forming gate insulating film for thin film transistors using plasma oxidation
US7754541B2 (en) Display device and method of producing the same
JP2002289865A (ja) 半導体装置およびその作製方法
US7883943B2 (en) Method for manufacturing thin film transistor and method for manufacturing display device
US7537979B2 (en) Method of manufacturing semiconductor device
JPH10214974A (ja) 半導体装置およびその作製方法
US6399428B2 (en) Liquid crystal display and manufacturing process of thin film transistor used therein
KR0154817B1 (ko) 액정 표시 장치용 박막 트랜지스터 및 그 제조 방법
JPH10303142A (ja) 半導体装置及びその作製方法
JP4223092B2 (ja) 半導体装置の作製方法
JP2002182244A (ja) 半導体装置およびその作製方法
JPH11261076A (ja) 半導体装置およびその作製方法
JP3646311B2 (ja) 多層配線のコンタクト構造、アクティブマトリクス基板及びその製造方法
JPWO1997029400A1 (ja) 多層配線のコンタクト構造、アクティブマトリクス基板及びその製造方法
JPH08122818A (ja) 金属配線基板および半導体装置およびそれらの製造方法
JP4693257B2 (ja) 半導体装置の作製方法
JP2005044936A (ja) 薄膜トランジスタの製造方法、薄膜トランジスタ、電気光学装置、及び電子機器
JP2003043950A (ja) 半導体装置の作製方法
JP2004157210A (ja) 半導体装置及びその作製方法
JP2003151905A (ja) 半導体装置の作製方法
JPH11284196A (ja) 半導体装置の作製方法

Legal Events

Date Code Title Description
A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20040406

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20040406

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080108

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080211

A02 Decision of refusal

Free format text: JAPANESE INTERMEDIATE CODE: A02

Effective date: 20080318

A521 Written amendment

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20080325

A911 Transfer of reconsideration by examiner before appeal (zenchi)

Free format text: JAPANESE INTERMEDIATE CODE: A911

Effective date: 20080502

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20080610

A761 Written withdrawal of application

Free format text: JAPANESE INTERMEDIATE CODE: A761

Effective date: 20080721